notes = "derivation of albe bond order formalism",
}
+@Article{newman65,
+ title = "Vibrational absorption of carbon in silicon",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "26",
+ number = "2",
+ pages = "373--379",
+ year = "1965",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(65)90166-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
+ author = "R. C. Newman and J. B. Willis",
+ notes = "c impurity dissolved as substitutional c in si",
+}
+
+@Article{baker68,
+ author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
+ Buschert",
+ collaboration = "",
+ title = "Effect of Carbon on the Lattice Parameter of Silicon",
+ publisher = "AIP",
+ year = "1968",
+ journal = "Journal of Applied Physics",
+ volume = "39",
+ number = "9",
+ pages = "4365--4368",
+ URL = "http://link.aip.org/link/?JAP/39/4365/1",
+ doi = "10.1063/1.1656977",
+ notes = "lattice contraction due to subst c",
+}
+
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
journal = "Journal of Physics and Chemistry of Solids",
stress, avoid sic precipitation",
}
+@Article{foell77,
+ title = "The formation of swirl defects in silicon by
+ agglomeration of self-interstitials",
+ journal = "Journal of Crystal Growth",
+ volume = "40",
+ number = "1",
+ pages = "90--108",
+ year = "1977",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(77)90034-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "b-swirl: si + c interstitial agglomerates, c-si
+ agglomerate",
+}
+
+@Article{foell81,
+ title = "Microdefects in silicon and their relation to point
+ defects",
+ journal = "Journal of Crystal Growth",
+ volume = "52",
+ number = "Part 2",
+ pages = "907--916",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90397-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "swirl review",
+}
+
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
notes = "c diffusion in si, kick out mechnism",
}
+@Article{kalejs84,
+ author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Self-interstitial enhanced carbon diffusion in
+ silicon",
+ publisher = "AIP",
+ year = "1984",
+ journal = "Applied Physics Letters",
+ volume = "45",
+ number = "3",
+ pages = "268--269",
+ keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
+ CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
+ TEMPERATURE; IMPURITIES",
+ URL = "http://link.aip.org/link/?APL/45/268/1",
+ doi = "10.1063/1.95167",
+ notes = "c diffusion due to si self-interstitials",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
eprint = "http://journals.cambridge.org/article_S194642740054367X",
}
+@Article{newman61,
+ title = "The diffusivity of carbon in silicon",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "19",
+ number = "3-4",
+ pages = "230--234",
+ year = "1961",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(61)90032-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+ author = "R. C. Newman and J. Wakefield",
+ notes = "diffusivity of substitutional c in si",
+}
+
@Article{goesele85,
author = "U. Gösele",
title = "The Role of Carbon and Point Defects in Silicon",