From f316cc9ddb491de92198b606180c19aecfc88ddf Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 9 Mar 2011 16:11:56 +0100 Subject: [PATCH] small changes to sic ibs --- bibdb/bibdb.bib | 52 ++++++++++++++++++++++++++++++++++++++++++++ posic/thesis/sic.tex | 3 +-- 2 files changed, 53 insertions(+), 2 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index cb3ae4a..a766650 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2058,6 +2058,58 @@ ideas", } +@Article{edelman76, + author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko + and E. V. Lubopytova", + title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon + by ion implantation", + publisher = "Taylor \& Francis", + year = "1976", + journal = "Radiation Effects", + volume = "29", + number = "1", + pages = "13--15", + URL = "http://www.informaworld.com/10.1080/00337577608233477", + notes = "3c-sic for different temperatures, amorphous, poly, + single crystalline", +} + +@Article{akimchenko80, + author = "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov", + title = "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions", + publisher = "Taylor \& Francis", + year = "1980", + journal = "Radiation Effects", + volume = "48", + number = "1", + pages = "7", + URL = "http://www.informaworld.com/10.1080/00337578008209220", + notes = "3c-sic nucleation by thermal spikes", +} + +@Article{martin90, + author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff + and M. Olivier and A. M. Papon and G. Rolland", + collaboration = "", + title = "High-temperature ion beam synthesis of cubic Si{C}", + publisher = "AIP", + year = "1990", + journal = "Journal of Applied Physics", + volume = "67", + number = "6", + pages = "2908--2912", + keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION + IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS; + TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION; + INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER + ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR + REACTIONS; MONOCRYSTALS", + URL = "http://link.aip.org/link/?JAP/67/2908/1", + doi = "10.1063/1.346092", + notes = "triple energy implantation to overcome high annealing + temepratures", +} + @Article{reeson87, author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and J. Davis and G. E. Celler", diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index 8af85c0..77e41a2 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -220,10 +220,9 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory. Thus, alternative approaches to fabricate SiC have been explored. -In the following ... High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}. -\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit{10}[at.\%] C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}. +\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}. Utilized and enhanced, 30 years devel ... (-32) By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}. -- 2.39.2