From ce62aafc76466fa8f4245b95a0cef60021558f65 Mon Sep 17 00:00:00 2001 From: hackbard Date: Sun, 4 May 2008 11:27:28 +0200 Subject: [PATCH] some more bib entries --- bibdb/bibdb.bib | 70 ++++++++++++++++++++++++++++++++++++++++++++++--- 1 file changed, 66 insertions(+), 4 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 9488c83..4588c08 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -129,6 +129,23 @@ configuration} } +@Article{gao02, + title = {Cascade overlap and amorphization in $3C-SiC:$ + Defect accumulation, topological features, and disordering}, + author = {Gao, F. and Weber, W. J.}, + journal = {Phys. Rev. B}, + volume = {66}, + number = {2}, + pages = {024106}, + numpages = {10}, + year = {2002}, + month = {Jul}, + doi = {10.1103/PhysRevB.66.024106}, + publisher = {American Physical Society}, + note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified, + pair correlation of amorphous sic, md result analyze} +} + % tight binding @Article{tang97, @@ -213,7 +230,7 @@ notes = {carbon interstitial migration path shown, 001 c-si dumbbell} } -% experimental stuff +% experimental stuff - interstitials @Article{watkins76, title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, @@ -230,7 +247,7 @@ notes = {epr observations of 100 interstitial carbon atom in silicon} } -@Article{PhysRevB.42.5759, +@Article{song90, title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, author = {L. W. Song, G. D. Watkins}, journal = {Phys. Rev. B}, @@ -244,13 +261,43 @@ publisher = {American Physical Society} } +% experimental stuff - strained silicon + +@Article{strane96, + title = {Carbon incorporation into Si at high concentrations + by ion implantation and solid phase epitaxy}, + author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux, + J.K. Watanabe, J. W. Mayer}, + journal = {J. Appl. Phys.}, + volume = {79}, + pages = {637}, + year = {1996}, + month = {January}, + doi = {10.1063/1.360806}, + notes = {strained silicon, carbon supersaturation} +} + +% properties sic + +@Article{edgar92, + title = {Prospects for device implementation of wide band gap semiconductors}, + author = {J. H. Edgar}, + journal = {J. Matter. Res.}, + volume = {7}, + pages = {235}, + year = {1992}, + month = {January}, + doi = {10.1557/JMR.1992.0235}, + notes = {properties wide band gap semiconductor, sic polytypes} +} + % my own publications @article{zirkelbach2007, title = {Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures}, author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. instr. and Meth. B}, + journal = {Nucl. Instr. and Meth. B}, volume = {257}, number = {1--2}, pages = {75--79}, @@ -265,7 +312,7 @@ title = {Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation}, author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. instr. and Meth. B}, + journal = {Nucl. Instr. and Meth. B}, volume = {242}, number = {1--2}, pages = {679--682}, @@ -291,3 +338,18 @@ publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} } +% the one of my boss + +@Article{lindner02, + title = {High-dose carbon implantations into silicon: + fundamental studies for new technological tricks}, + author = {J. K. N. Lindner}, + journal = {Appl. Phys. A}, + volume = {77}, + pages = {27--38}, + year = {2003}, + doi = {10.1007/s00339-002-2062-8}, + notes = {ibs, burried sic layers} +} + + -- 2.39.2