$\rightarrow$ {\bf Carbon induced} nucleation of spherical
$SiC_x$-precipitates
\item High interfacial energy between $3C-SiC$ and $c-Si$\\
$\rightarrow$ {\bf Carbon induced} nucleation of spherical
$SiC_x$-precipitates
\item High interfacial energy between $3C-SiC$ and $c-Si$\\
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf Lateral strain} (black arrows)
\item Implantation range near surface\\
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf Lateral strain} (black arrows)
\item Implantation range near surface\\