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implantations under certain implantation conditions.}
\begin{itemize}
\item Regularly spaced, nanometric spherical and lamellar
implantations under certain implantation conditions.}
\begin{itemize}
\item Regularly spaced, nanometric spherical and lamellar
$180 \, keV$ $C^+ \rightarrow Si$,
$T_i=150 \, ^{\circ} \mathrm{C}$,
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
$180 \, keV$ $C^+ \rightarrow Si$,
$T_i=150 \, ^{\circ} \mathrm{C}$,
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
E. D. Specht et al., Nucl. Instr. and Meth. B 84 (1994) 323.\\
M. Ishimaru et al., Nucl. Instr. and Meth. B 166-167 (2000) 390.}
\end{pbox}
E. D. Specht et al., Nucl. Instr. and Meth. B 84 (1994) 323.\\
M. Ishimaru et al., Nucl. Instr. and Meth. B 166-167 (2000) 390.}
\end{pbox}
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf Lateral strain} (black arrows)
\item Implantation range near surface\\
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf Lateral strain} (black arrows)
\item Implantation range near surface\\
\item Reduction of the carbon supersaturation in $c-Si$\\
$\rightarrow$ {\bf Carbon diffusion} into amorphous volumina
(white arrows)
\item Reduction of the carbon supersaturation in $c-Si$\\
$\rightarrow$ {\bf Carbon diffusion} into amorphous volumina
(white arrows)
an empty, crystalline $3 \, nm$ bottom layer
\end{itemize}
\begin{picture}(0,0)(+40,-32)
an empty, crystalline $3 \, nm$ bottom layer
\end{itemize}
\begin{picture}(0,0)(+40,-32)
\end{picture}%
{\bf
Simulation parameters $d_v$, $d_r$ and $n$ control the
diffusion and sputtering process.}
\end{pbox}
\end{picture}%
{\bf
Simulation parameters $d_v$, $d_r$ and $n$ control the
diffusion and sputtering process.}
\end{pbox}
{\scriptsize
F. Zirkelbach, M. H"aberlen, J. K. N. Lindner,
B. Stritzker. Comp. Mater. Sci. 33 (2005) 310.\\
{\scriptsize
F. Zirkelbach, M. H"aberlen, J. K. N. Lindner,
B. Stritzker. Comp. Mater. Sci. 33 (2005) 310.\\