+Indeed, closely investigating the large amount of literature reveals controversial ideas of SiC formation, which are reviewed in more detail in the following.
+
+\begin{figure}[ht]
+\begin{center}
+\subfigure[]{\label{fig:sic:hrem:c-si}\includegraphics[width=0.48\columnwidth]{tem_c-si-db.eps}}
+\subfigure[]{\label{fig:sic:hrem:sic}\includegraphics[width=0.48\columnwidth]{tem_3c-sic.eps}}
+\end{center}
+\caption{High resolution transmission electron microscopy (HREM) micrographs\cite{lindner99_2} of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).}
+\label{fig:sic:hrem}
+\end{figure}
+
+\ac{HREM} investigations of C-implanted Si at room temperature followed by \ac{RTA} show the formation of C-Si dumbbell agglomerates, which are stable up to annealing temperatures of about \unit[700-800]{$\circ$C}, and a transformation into 3C-SiC precipitates at higher temperatures \cite{werner96,werner97}.
+The precipitates with diamateres between \unit[2]{nm} and \unit[5]{nm} are incorporated in the Si matrix without any remarkable strain fields, which is explained by the nearly equal atomic density of C-Si agglomerates and the SiC unit cell.
+Implantations at \unit[500]{$\circ$C} likewise suggest an initial formation of C-Si dumbbells on regular Si lattice sites, which agglomerate into large clusters \cite{lindner99_2}.
+The agglomerates of such dimers, which do not generate lattice strain but lead to a local increase of the lattice potential \cite{werner96}, are indicated by dark contrasts and otherwise undisturbed Si lattice fringes in \ac{HREM}, as can be seen in Fig.~\ref{fig:sic:hrem:c-si}.
+A topotactic transformation into a 3C-SiC precipitate occurs once a critical radius of \unit[2]{nm} to \unit[4]{nm} is reached.
+The precipitation is manifested by the disappearance of the dark contrasts in favor of Moir\'e patterns (Fig.~\ref{fig:sic:hrem:sic}) due to the lattice mismatch of \unit[20]{\%} of the 3C-SiC precipitate and the Si host.
+The insignificantly lower Si density of SiC of approximately \unit[3]{\%} compared to c-Si results in the emission of only a few excess Si atoms.