}
@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon carbide electronic materials and devices",
+ journal = "MRS Bull.",
+ year = "1997",
+ volume = "22",
+ number = "3",
+ pages = "19--22",
+ publisher = "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
journal = "MRS Bull.",
}
@Article{zirkelbach11,
- title = "Combined ab initio and classical potential simulation
- study on the silicon carbide precipitation in silicon",
- journal = "accepted for publication in Phys. Rev. B",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
abstract = "Atomistic simulations on the silicon carbide
precipitation in bulk silicon employing both, classical
potential and first-principles methods are presented.