1 it's never too late to start a logfile ...
10 migratin of defects tests
15 local: si_0k, si_20, si_1250, si_2050
16 c_0k, c_20, c_1250, c_2050
17 sic_0k, sic_20, sic_1250, sic_2050
19 fully relaxed si, c or sic at given temperature, using albe pot
23 same, using tersoff pot
27 same, without tp-ctrl, to check conservation of energy (both, tersoff an albe)
32 local: c_in_si_prec_01
34 3x3 lattice si, insertion of same amount of carbon at 2050 celsius, relax 1 ns
39 ./posic_2009_02/saves/c_in_si_prec_10 <- 2050
40 ./posic_2009_02/saves/c_in_si_prec_11 <- 1650
41 ./posic_2009_02/saves/c_in_si_prec_12 <- 1250
43 like 07, 08, 09 but using tersoff = tersoff + total volume
45 ./posic_2009_02/saves/c_in_si_prec_12_cnt0k
47 continued, cooling down to 0k
49 ./posic_2009_02/saves/c_in_si_prec_07_cnt0k
50 ./posic_2009_02/saves/c_in_si_prec_09_cnt0k
52 continued (from 23.02.09), cooling down to 0K
57 ./posic_2009_02/saves/c_in_si_prec_2050_01
58 ./posic_2009_02/saves/c_in_si_prec_2050_02 WARNING: bullshit notation! see below
59 ./posic_2009_02/saves/c_in_si_prec_2050_03
61 c in sphere of r = 2.5 nm at 01 = 2050 02 = 1650 03 = 1250 celsius
63 local: sic_prec_08-tup1250 / 1650 / 2050
65 sic prec at 1250 / 1650 / 2050 celsius
67 ./posic_2009_02/saves/c_in_si_prec_04
68 ./posic_2009_02/saves/c_in_si_prec_05
69 ./posic_2009_02/saves/c_in_si_prec_06
71 like first three, using tersoff <- TODO
73 ./posic_2009_02/saves/c_in_si_prec_07 <- 2050
74 ./posic_2009_02/saves/c_in_si_prec_08 <- 1650
75 ./posic_2009_02/saves/c_in_si_prec_09 <- 1250
77 like first three (albe!) into total volume
79 TODO: - kleine si mit genausoviel c ins
80 - c in groesseres gebiet (tot oder so?)
81 - c in grosses gebiet + 'mehr' c
88 - sic in si, free run for 2ps, tctrl to 23 celsius
89 - more tctrl and annealing
94 ./posic_2009_01/saves/c_in_si_prec_1650-2150_v2_04
96 tersoff instead of albe, cr = 1.5 angstrom, insertion into sphere r=2.5
101 adapted parcas albe sic parameters, dcut of si-1 unmodified!
106 ./posic_2009_01/saves/c_in_si_prec_1650-2150_v2_03
108 as 02, but cr of Si-C increased to 1.9
113 ./posic_2009_01/saves/c_in_si_prec_1650-2150_v2_02
115 as 01, but: c insertion cr check for another c atom increased to 2.7 angstrom
120 INS_SPHERE implemented
122 ./posic_2009_01/saves/c_in_si_prec_1650-2150_v2_01
124 316 x 10 C -> Si, v2: sphere r=2.5 nm, t=1650(+500)