2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "The role of thermostats in modeling vapor phase
29 condensation of silicon nanoparticles",
30 journal = "Applied Surface Science",
35 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
37 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
38 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
39 author = "Paul Erhart and Karsten Albe",
43 title = "Modeling the metal-semiconductor interaction:
44 Analytical bond-order potential for platinum-carbon",
45 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
46 journal = "Phys. Rev. B",
53 doi = "10.1103/PhysRevB.65.195124",
54 publisher = "American Physical Society",
55 notes = "derivation of albe bond order formalism",
59 title = "Vibrational absorption of carbon in silicon",
60 journal = "Journal of Physics and Chemistry of Solids",
67 doi = "DOI: 10.1016/0022-3697(65)90166-6",
68 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
69 author = "R. C. Newman and J. B. Willis",
70 notes = "c impurity dissolved as substitutional c in si",
74 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
77 title = "Effect of Carbon on the Lattice Parameter of Silicon",
80 journal = "Journal of Applied Physics",
84 URL = "http://link.aip.org/link/?JAP/39/4365/1",
85 doi = "10.1063/1.1656977",
86 notes = "lattice contraction due to subst c",
90 title = "The solubility of carbon in pulled silicon crystals",
91 journal = "Journal of Physics and Chemistry of Solids",
98 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
100 author = "A. R. Bean and R. C. Newman",
101 notes = "experimental solubility data of carbon in silicon",
105 author = "M. A. Capano and R. J. Trew",
106 title = "Silicon Carbide Electronic Materials and Devices",
107 journal = "MRS Bull.",
114 author = "G. R. Fisher and P. Barnes",
115 title = "Towards a unified view of polytypism in silicon
117 journal = "Philos. Mag. B",
121 notes = "sic polytypes",
125 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
126 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
127 Serre and A. Perez-Rodriguez",
128 title = "Synthesis of nano-sized Si{C} precipitates in Si by
129 simultaneous dual-beam implantation of {C}+ and Si+
131 journal = "Appl. Phys. A: Mater. Sci. Process.",
136 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
137 notes = "dual implantation, sic prec enhanced by vacancies,
138 precipitation by interstitial and substitutional
139 carbon, both mechanisms explained + refs",
143 title = "Carbon-mediated effects in silicon and in
144 silicon-related materials",
145 journal = "Materials Chemistry and Physics",
152 doi = "DOI: 10.1016/0254-0584(95)01673-I",
153 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
154 author = "W. Skorupa and R. A. Yankov",
155 notes = "review of silicon carbon compound",
159 author = "P. S. de Laplace",
160 title = "Th\'eorie analytique des probabilit\'es",
161 series = "Oeuvres Compl\`etes de Laplace",
163 publisher = "Gauthier-Villars",
167 @Article{mattoni2007,
168 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
169 title = "{Atomistic modeling of brittleness in covalent
171 journal = "Phys. Rev. B",
177 doi = "10.1103/PhysRevB.76.224103",
178 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
179 longe(r)-range-interactions, brittle propagation of
180 fracture, more available potentials, universal energy
181 relation (uer), minimum range model (mrm)",
185 title = "Comparative study of silicon empirical interatomic
187 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
188 journal = "Phys. Rev. B",
191 pages = "2250--2279",
195 doi = "10.1103/PhysRevB.46.2250",
196 publisher = "American Physical Society",
197 notes = "comparison of classical potentials for si",
201 title = "Stress relaxation in $a-Si$ induced by ion
203 author = "H. M. Urbassek M. Koster",
204 journal = "Phys. Rev. B",
207 pages = "11219--11224",
211 doi = "10.1103/PhysRevB.62.11219",
212 publisher = "American Physical Society",
213 notes = "virial derivation for 3-body tersoff potential",
216 @Article{breadmore99,
217 title = "Direct simulation of ion-beam-induced stressing and
218 amorphization of silicon",
219 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
220 journal = "Phys. Rev. B",
223 pages = "12610--12616",
227 doi = "10.1103/PhysRevB.60.12610",
228 publisher = "American Physical Society",
229 notes = "virial derivation for 3-body tersoff potential",
233 title = "First-Principles Calculation of Stress",
234 author = "O. H. Nielsen and Richard M. Martin",
235 journal = "Phys. Rev. Lett.",
242 doi = "10.1103/PhysRevLett.50.697",
243 publisher = "American Physical Society",
244 notes = "generalization of virial theorem",
248 title = "Quantum-mechanical theory of stress and force",
249 author = "O. H. Nielsen and Richard M. Martin",
250 journal = "Phys. Rev. B",
253 pages = "3780--3791",
257 doi = "10.1103/PhysRevB.32.3780",
258 publisher = "American Physical Society",
259 notes = "dft virial stress and forces",
263 author = "Henri Moissan",
264 title = "Nouvelles recherches sur la météorité de Cañon
266 journal = "Comptes rendus de l'Académie des Sciences",
273 author = "Y. S. Park",
274 title = "Si{C} Materials and Devices",
275 publisher = "Academic Press",
276 address = "San Diego",
281 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
282 Calvin H. Carter Jr. and D. Asbury",
283 title = "Si{C} Seeded Boule Growth",
284 journal = "Materials Science Forum",
288 notes = "modified lely process, micropipes",
292 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
293 Thermodynamical Properties of Lennard-Jones Molecules",
294 author = "Loup Verlet",
295 journal = "Phys. Rev.",
301 doi = "10.1103/PhysRev.159.98",
302 publisher = "American Physical Society",
303 notes = "velocity verlet integration algorithm equation of
307 @Article{berendsen84,
308 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
309 Gunsteren and A. DiNola and J. R. Haak",
311 title = "Molecular dynamics with coupling to an external bath",
314 journal = "J. Chem. Phys.",
317 pages = "3684--3690",
318 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
319 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
320 URL = "http://link.aip.org/link/?JCP/81/3684/1",
321 doi = "10.1063/1.448118",
322 notes = "berendsen thermostat barostat",
326 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
328 title = "Molecular dynamics determination of defect energetics
329 in beta -Si{C} using three representative empirical
331 journal = "Modell. Simul. Mater. Sci. Eng.",
335 URL = "http://stacks.iop.org/0965-0393/3/615",
336 notes = "comparison of tersoff, pearson and eam for defect
337 energetics in sic; (m)eam parameters for sic",
342 title = "Relationship between the embedded-atom method and
344 author = "Donald W. Brenner",
345 journal = "Phys. Rev. Lett.",
352 doi = "10.1103/PhysRevLett.63.1022",
353 publisher = "American Physical Society",
354 notes = "relation of tersoff and eam potential",
358 title = "Molecular-dynamics study of self-interstitials in
360 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
361 journal = "Phys. Rev. B",
364 pages = "9552--9558",
368 doi = "10.1103/PhysRevB.35.9552",
369 publisher = "American Physical Society",
370 notes = "selft-interstitials in silicon, stillinger-weber,
371 calculation of defect formation energy, defect
376 title = "Extended interstitials in silicon and germanium",
377 author = "H. R. Schober",
378 journal = "Phys. Rev. B",
381 pages = "13013--13015",
385 doi = "10.1103/PhysRevB.39.13013",
386 publisher = "American Physical Society",
387 notes = "stillinger-weber silicon 110 stable and metastable
388 dumbbell configuration",
392 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
393 Defect accumulation, topological features, and
395 author = "F. Gao and W. J. Weber",
396 journal = "Phys. Rev. B",
403 doi = "10.1103/PhysRevB.66.024106",
404 publisher = "American Physical Society",
405 notes = "sic intro, si cascade in 3c-sic, amorphization,
406 tersoff modified, pair correlation of amorphous sic, md
410 @Article{devanathan98,
411 title = "Computer simulation of a 10 ke{V} Si displacement
413 journal = "Nucl. Instrum. Methods Phys. Res. B",
419 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
420 author = "R. Devanathan and W. J. Weber and T. Diaz de la
422 notes = "modified tersoff short range potential, ab initio
426 @Article{devanathan98_2,
427 title = "Displacement threshold energies in [beta]-Si{C}",
428 journal = "J. Nucl. Mater.",
434 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
435 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
437 notes = "modified tersoff, ab initio, combined ab initio
441 @Article{kitabatake00,
442 title = "Si{C}/Si heteroepitaxial growth",
443 author = "M. Kitabatake",
444 journal = "Thin Solid Films",
449 notes = "md simulation, sic si heteroepitaxy, mbe",
453 title = "Intrinsic point defects in crystalline silicon:
454 Tight-binding molecular dynamics studies of
455 self-diffusion, interstitial-vacancy recombination, and
457 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
459 journal = "Phys. Rev. B",
462 pages = "14279--14289",
466 doi = "10.1103/PhysRevB.55.14279",
467 publisher = "American Physical Society",
468 notes = "si self interstitial, diffusion, tbmd",
472 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
475 title = "A kinetic Monte--Carlo study of the effective
476 diffusivity of the silicon self-interstitial in the
477 presence of carbon and boron",
480 journal = "J. Appl. Phys.",
483 pages = "1963--1967",
484 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
485 CARBON ADDITIONS; BORON ADDITIONS; elemental
486 semiconductors; self-diffusion",
487 URL = "http://link.aip.org/link/?JAP/84/1963/1",
488 doi = "10.1063/1.368328",
489 notes = "kinetic monte carlo of si self interstitial
494 title = "Barrier to Migration of the Silicon
496 author = "Y. Bar-Yam and J. D. Joannopoulos",
497 journal = "Phys. Rev. Lett.",
500 pages = "1129--1132",
504 doi = "10.1103/PhysRevLett.52.1129",
505 publisher = "American Physical Society",
506 notes = "si self-interstitial migration barrier",
509 @Article{bar-yam84_2,
510 title = "Electronic structure and total-energy migration
511 barriers of silicon self-interstitials",
512 author = "Y. Bar-Yam and J. D. Joannopoulos",
513 journal = "Phys. Rev. B",
516 pages = "1844--1852",
520 doi = "10.1103/PhysRevB.30.1844",
521 publisher = "American Physical Society",
525 title = "First-principles calculations of self-diffusion
526 constants in silicon",
527 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
528 and D. B. Laks and W. Andreoni and S. T. Pantelides",
529 journal = "Phys. Rev. Lett.",
532 pages = "2435--2438",
536 doi = "10.1103/PhysRevLett.70.2435",
537 publisher = "American Physical Society",
538 notes = "si self int diffusion by ab initio md, formation
539 entropy calculations",
543 title = "Defect migration in crystalline silicon",
544 author = "Lindsey J. Munro and David J. Wales",
545 journal = "Phys. Rev. B",
548 pages = "3969--3980",
552 doi = "10.1103/PhysRevB.59.3969",
553 publisher = "American Physical Society",
554 notes = "eigenvector following method, vacancy and interstiial
555 defect migration mechanisms",
559 title = "Tight-binding theory of native point defects in
561 author = "L. Colombo",
562 journal = "Annu. Rev. Mater. Res.",
567 doi = "10.1146/annurev.matsci.32.111601.103036",
568 publisher = "Annual Reviews",
569 notes = "si self interstitial, tbmd, virial stress",
572 @Article{al-mushadani03,
573 title = "Free-energy calculations of intrinsic point defects in
575 author = "O. K. Al-Mushadani and R. J. Needs",
576 journal = "Phys. Rev. B",
583 doi = "10.1103/PhysRevB.68.235205",
584 publisher = "American Physical Society",
585 notes = "formation energies of intrinisc point defects in
586 silicon, si self interstitials, free energy",
589 @Article{goedecker02,
590 title = "A Fourfold Coordinated Point Defect in Silicon",
591 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
592 journal = "Phys. Rev. Lett.",
599 doi = "10.1103/PhysRevLett.88.235501",
600 publisher = "American Physical Society",
601 notes = "first time ffcd, fourfold coordinated point defect in
606 title = "Ab initio molecular dynamics simulation of
607 self-interstitial diffusion in silicon",
608 author = "Beat Sahli and Wolfgang Fichtner",
609 journal = "Phys. Rev. B",
616 doi = "10.1103/PhysRevB.72.245210",
617 publisher = "American Physical Society",
618 notes = "si self int, diffusion, barrier height, voronoi
623 title = "Ab initio calculations of the interaction between
624 native point defects in silicon",
625 journal = "Mater. Sci. Eng., B",
630 note = "EMRS 2005, Symposium D - Materials Science and Device
631 Issues for Future Technologies",
633 doi = "DOI: 10.1016/j.mseb.2005.08.072",
634 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
635 author = "G. Hobler and G. Kresse",
636 notes = "vasp intrinsic si defect interaction study, capture
641 title = "Ab initio study of self-diffusion in silicon over a
642 wide temperature range: Point defect states and
643 migration mechanisms",
644 author = "Shangyi Ma and Shaoqing Wang",
645 journal = "Phys. Rev. B",
652 doi = "10.1103/PhysRevB.81.193203",
653 publisher = "American Physical Society",
654 notes = "si self interstitial diffusion + refs",
658 title = "Atomistic simulations on the thermal stability of the
659 antisite pair in 3{C}- and 4{H}-Si{C}",
660 author = "M. Posselt and F. Gao and W. J. Weber",
661 journal = "Phys. Rev. B",
668 doi = "10.1103/PhysRevB.73.125206",
669 publisher = "American Physical Society",
673 title = "Correlation between self-diffusion in Si and the
674 migration mechanisms of vacancies and
675 self-interstitials: An atomistic study",
676 author = "M. Posselt and F. Gao and H. Bracht",
677 journal = "Phys. Rev. B",
684 doi = "10.1103/PhysRevB.78.035208",
685 publisher = "American Physical Society",
686 notes = "si self-interstitial and vacancy diffusion, stillinger
691 title = "Ab initio and empirical-potential studies of defect
692 properties in $3{C}-Si{C}$",
693 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
695 journal = "Phys. Rev. B",
702 doi = "10.1103/PhysRevB.64.245208",
703 publisher = "American Physical Society",
704 notes = "defects in 3c-sic",
708 title = "Empirical potential approach for defect properties in
710 journal = "Nucl. Instrum. Methods Phys. Res. B",
717 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
718 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
719 author = "Fei Gao and William J. Weber",
720 keywords = "Empirical potential",
721 keywords = "Defect properties",
722 keywords = "Silicon carbide",
723 keywords = "Computer simulation",
724 notes = "sic potential, brenner type, like erhart/albe",
728 title = "Atomistic study of intrinsic defect migration in
730 author = "Fei Gao and William J. Weber and M. Posselt and V.
732 journal = "Phys. Rev. B",
739 doi = "10.1103/PhysRevB.69.245205",
740 publisher = "American Physical Society",
741 notes = "defect migration in sic",
745 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
748 title = "Ab Initio atomic simulations of antisite pair recovery
749 in cubic silicon carbide",
752 journal = "Appl. Phys. Lett.",
758 keywords = "ab initio calculations; silicon compounds; antisite
759 defects; wide band gap semiconductors; molecular
760 dynamics method; density functional theory;
761 electron-hole recombination; photoluminescence;
762 impurities; diffusion",
763 URL = "http://link.aip.org/link/?APL/90/221915/1",
764 doi = "10.1063/1.2743751",
767 @Article{mattoni2002,
768 title = "Self-interstitial trapping by carbon complexes in
769 crystalline silicon",
770 author = "A. Mattoni and F. Bernardini and L. Colombo",
771 journal = "Phys. Rev. B",
778 doi = "10.1103/PhysRevB.66.195214",
779 publisher = "American Physical Society",
780 notes = "c in c-si, diffusion, interstitial configuration +
781 links, interaction of carbon and silicon interstitials,
782 tersoff suitability",
786 title = "Calculations of Silicon Self-Interstitial Defects",
787 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
789 journal = "Phys. Rev. Lett.",
792 pages = "2351--2354",
796 doi = "10.1103/PhysRevLett.83.2351",
797 publisher = "American Physical Society",
798 notes = "nice images of the defects, si defect overview +
803 title = "Identification of the migration path of interstitial
805 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
806 journal = "Phys. Rev. B",
809 pages = "7439--7442",
813 doi = "10.1103/PhysRevB.50.7439",
814 publisher = "American Physical Society",
815 notes = "carbon interstitial migration path shown, 001 c-si
820 title = "Theory of carbon-carbon pairs in silicon",
821 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
822 journal = "Phys. Rev. B",
825 pages = "9845--9850",
829 doi = "10.1103/PhysRevB.58.9845",
830 publisher = "American Physical Society",
831 notes = "c_i c_s pair configuration, theoretical results",
835 title = "Bistable interstitial-carbon--substitutional-carbon
837 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
839 journal = "Phys. Rev. B",
842 pages = "5765--5783",
846 doi = "10.1103/PhysRevB.42.5765",
847 publisher = "American Physical Society",
848 notes = "c_i c_s pair configuration, experimental results",
852 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
853 Shifeng Lu and Xiang-Yang Liu",
855 title = "Ab initio modeling and experimental study of {C}--{B}
859 journal = "Appl. Phys. Lett.",
863 keywords = "silicon; boron; carbon; elemental semiconductors;
864 impurity-defect interactions; ab initio calculations;
865 secondary ion mass spectra; diffusion; interstitials",
866 URL = "http://link.aip.org/link/?APL/80/52/1",
867 doi = "10.1063/1.1430505",
868 notes = "c-c 100 split, lower as a and b states of capaz",
872 title = "Ab initio investigation of carbon-related defects in
874 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
876 journal = "Phys. Rev. B",
879 pages = "12554--12557",
883 doi = "10.1103/PhysRevB.47.12554",
884 publisher = "American Physical Society",
885 notes = "c interstitials in crystalline silicon",
889 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
891 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
892 Sokrates T. Pantelides",
893 journal = "Phys. Rev. Lett.",
896 pages = "1814--1817",
900 doi = "10.1103/PhysRevLett.52.1814",
901 publisher = "American Physical Society",
902 notes = "microscopic theory diffusion silicon dft migration
907 title = "Unified Approach for Molecular Dynamics and
908 Density-Functional Theory",
909 author = "R. Car and M. Parrinello",
910 journal = "Phys. Rev. Lett.",
913 pages = "2471--2474",
917 doi = "10.1103/PhysRevLett.55.2471",
918 publisher = "American Physical Society",
919 notes = "car parrinello method, dft and md",
923 title = "Short-range order, bulk moduli, and physical trends in
924 c-$Si1-x$$Cx$ alloys",
925 author = "P. C. Kelires",
926 journal = "Phys. Rev. B",
929 pages = "8784--8787",
933 doi = "10.1103/PhysRevB.55.8784",
934 publisher = "American Physical Society",
935 notes = "c strained si, montecarlo md, bulk moduli, next
940 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
941 Application to the $Si1-x-yGexCy$ System",
942 author = "P. C. Kelires",
943 journal = "Phys. Rev. Lett.",
946 pages = "1114--1117",
950 doi = "10.1103/PhysRevLett.75.1114",
951 publisher = "American Physical Society",
952 notes = "mc md, strain compensation in si ge by c insertion",
956 title = "Low temperature electron irradiation of silicon
958 journal = "Solid State Communications",
965 doi = "DOI: 10.1016/0038-1098(70)90074-8",
966 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
967 author = "A. R. Bean and R. C. Newman",
971 author = "F. Durand and J. Duby",
972 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
973 title = "Carbon solubility in solid and liquid silicon—{A}
974 review with reference to eutectic equilibrium",
975 journal = "Journal of Phase Equilibria",
976 publisher = "Springer New York",
978 keyword = "Chemistry and Materials Science",
982 URL = "http://dx.doi.org/10.1361/105497199770335956",
983 note = "10.1361/105497199770335956",
985 notes = "better c solubility limit in silicon",
989 title = "{EPR} Observation of the Isolated Interstitial Carbon
991 author = "G. D. Watkins and K. L. Brower",
992 journal = "Phys. Rev. Lett.",
995 pages = "1329--1332",
999 doi = "10.1103/PhysRevLett.36.1329",
1000 publisher = "American Physical Society",
1001 notes = "epr observations of 100 interstitial carbon atom in
1006 title = "{EPR} identification of the single-acceptor state of
1007 interstitial carbon in silicon",
1008 author = "L. W. Song and G. D. Watkins",
1009 journal = "Phys. Rev. B",
1012 pages = "5759--5764",
1016 doi = "10.1103/PhysRevB.42.5759",
1017 publisher = "American Physical Society",
1018 notes = "carbon diffusion in silicon",
1022 author = "A K Tipping and R C Newman",
1023 title = "The diffusion coefficient of interstitial carbon in
1025 journal = "Semicond. Sci. Technol.",
1029 URL = "http://stacks.iop.org/0268-1242/2/315",
1031 notes = "diffusion coefficient of carbon interstitials in
1036 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1039 title = "Annealing behavior of Me{V} implanted carbon in
1043 journal = "Journal of Applied Physics",
1046 pages = "3815--3820",
1047 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1048 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1050 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1051 doi = "10.1063/1.354474",
1052 notes = "c at interstitial location for rt implantation in si",
1056 title = "Carbon incorporation into Si at high concentrations by
1057 ion implantation and solid phase epitaxy",
1058 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1059 Picraux and J. K. Watanabe and J. W. Mayer",
1060 journal = "J. Appl. Phys.",
1065 doi = "10.1063/1.360806",
1066 notes = "strained silicon, carbon supersaturation",
1069 @Article{laveant2002,
1070 title = "Epitaxy of carbon-rich silicon with {MBE}",
1071 journal = "Mater. Sci. Eng., B",
1077 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1078 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1079 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1081 notes = "low c in si, tensile stress to compensate compressive
1082 stress, avoid sic precipitation",
1086 title = "The formation of swirl defects in silicon by
1087 agglomeration of self-interstitials",
1088 journal = "Journal of Crystal Growth",
1095 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1096 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1097 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1098 notes = "b-swirl: si + c interstitial agglomerates, c-si
1103 title = "Microdefects in silicon and their relation to point
1105 journal = "Journal of Crystal Growth",
1112 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1113 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1114 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1115 notes = "swirl review",
1119 author = "P. Werner and S. Eichler and G. Mariani and R.
1120 K{\"{o}}gler and W. Skorupa",
1121 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1122 silicon by transmission electron microscopy",
1125 journal = "Appl. Phys. Lett.",
1129 keywords = "silicon; ion implantation; carbon; crystal defects;
1130 transmission electron microscopy; annealing; positron
1131 annihilation; secondary ion mass spectroscopy; buried
1132 layers; precipitation",
1133 URL = "http://link.aip.org/link/?APL/70/252/1",
1134 doi = "10.1063/1.118381",
1135 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1139 @InProceedings{werner96,
1140 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1142 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1143 International Conference on",
1144 title = "{TEM} investigation of {C}-Si defects in carbon
1151 doi = "10.1109/IIT.1996.586497",
1153 notes = "c-si agglomerates dumbbells",
1157 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1160 title = "Carbon diffusion in silicon",
1163 journal = "Appl. Phys. Lett.",
1166 pages = "2465--2467",
1167 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1168 secondary ion mass spectra; semiconductor epitaxial
1169 layers; annealing; impurity-defect interactions;
1170 impurity distribution",
1171 URL = "http://link.aip.org/link/?APL/73/2465/1",
1172 doi = "10.1063/1.122483",
1173 notes = "c diffusion in si, kick out mechnism",
1177 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1179 title = "Self-interstitial enhanced carbon diffusion in
1183 journal = "Applied Physics Letters",
1187 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1188 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1189 TEMPERATURE; IMPURITIES",
1190 URL = "http://link.aip.org/link/?APL/45/268/1",
1191 doi = "10.1063/1.95167",
1192 notes = "c diffusion due to si self-interstitials",
1196 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1199 title = "Characterization of SiGe/Si heterostructures formed by
1200 Ge[sup + ] and {C}[sup + ] implantation",
1203 journal = "Applied Physics Letters",
1206 pages = "2345--2347",
1207 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1208 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1209 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1210 EPITAXY; CARBON IONS; GERMANIUM IONS",
1211 URL = "http://link.aip.org/link/?APL/57/2345/1",
1212 doi = "10.1063/1.103888",
1216 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1217 Doyle and S. T. Picraux and J. W. Mayer",
1219 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1222 journal = "Applied Physics Letters",
1225 pages = "2786--2788",
1226 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1227 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1228 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1229 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1230 EPITAXY; AMORPHIZATION",
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1232 doi = "10.1063/1.110334",
1236 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1237 Legoues and J. Angilello and F. Cardone",
1239 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1240 strained layer superlattices",
1243 journal = "Applied Physics Letters",
1246 pages = "2758--2760",
1247 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1248 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1249 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1250 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1251 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1252 URL = "http://link.aip.org/link/?APL/60/2758/1",
1253 doi = "10.1063/1.106868",
1257 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1258 Picraux and J. K. Watanabe and J. W. Mayer",
1260 title = "Precipitation and relaxation in strained Si[sub 1 -
1261 y]{C}[sub y]/Si heterostructures",
1264 journal = "J. Appl. Phys.",
1267 pages = "3656--3668",
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1269 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1270 doi = "10.1063/1.357429",
1271 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1272 precipitation by substitutional carbon, coherent prec,
1273 coherent to incoherent transition strain vs interface
1278 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1281 title = "Investigation of the high temperature behavior of
1282 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1285 journal = "J. Appl. Phys.",
1288 pages = "1934--1937",
1289 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1290 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1291 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1292 TEMPERATURE RANGE 04001000 K",
1293 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1294 doi = "10.1063/1.358826",
1298 title = "Prospects for device implementation of wide band gap
1300 author = "J. H. Edgar",
1301 journal = "J. Mater. Res.",
1306 doi = "10.1557/JMR.1992.0235",
1307 notes = "properties wide band gap semiconductor, sic
1311 @Article{zirkelbach2007,
1312 title = "Monte Carlo simulation study of a selforganisation
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1314 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
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1350 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1352 journal = "Comp. Mater. Sci.",
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1364 @Article{zirkelbach09,
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1367 journal = "Mater. Sci. Eng., B",
1372 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1373 Silicon Materials Research for Electronic and
1374 Photovoltaic Applications",
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1381 keywords = "Carbon",
1382 keywords = "Silicon carbide",
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1385 keywords = "Molecular dynamics simulations",
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1390 classical potentials and first-principles methods",
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1392 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1428 author = "J. K. N. Lindner and A. Frohnwieser and B.
1429 Rauschenbach and B. Stritzker",
1430 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1432 journal = "MRS Online Proceedings Library",
1437 doi = "10.1557/PROC-354-171",
1438 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1439 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1440 notes = "first time ibs at moderate temperatures",
1444 title = "Formation of buried epitaxial silicon carbide layers
1445 in silicon by ion beam synthesis",
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1455 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1456 Götz and A. Frohnwieser and B. Rauschenbach and B.
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1461 @Article{calcagno96,
1462 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1464 journal = "Nuclear Instruments and Methods in Physics Research
1465 Section B: Beam Interactions with Materials and Atoms",
1470 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1471 New Trends in Ion Beam Processing of Materials",
1473 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1474 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1475 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1476 Grimaldi and P. Musumeci",
1477 notes = "dose window, graphitic bonds",
1481 title = "Mechanisms of Si{C} Formation in the Ion Beam
1482 Synthesis of 3{C}-Si{C} Layers in Silicon",
1483 journal = "Materials Science Forum",
1488 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1489 URL = "http://www.scientific.net/MSF.264-268.215",
1490 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1491 notes = "intermediate temperature for sharp interface + good
1496 title = "Controlling the density distribution of Si{C}
1497 nanocrystals for the ion beam synthesis of buried Si{C}
1499 journal = "Nucl. Instrum. Methods Phys. Res. B",
1506 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1507 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1508 author = "J. K. N. Lindner and B. Stritzker",
1509 notes = "two-step implantation process",
1512 @Article{lindner99_2,
1513 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1515 journal = "Nucl. Instrum. Methods Phys. Res. B",
1521 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1522 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1523 author = "J. K. N. Lindner and B. Stritzker",
1524 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1528 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1529 Basic physical processes",
1530 journal = "Nucl. Instrum. Methods Phys. Res. B",
1537 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1538 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1539 author = "J{\"{o}}rg K. N. Lindner",
1543 title = "High-dose carbon implantations into silicon:
1544 fundamental studies for new technological tricks",
1545 author = "J. K. N. Lindner",
1546 journal = "Appl. Phys. A",
1550 doi = "10.1007/s00339-002-2062-8",
1551 notes = "ibs, burried sic layers",
1555 title = "On the balance between ion beam induced nanoparticle
1556 formation and displacive precipitate resolution in the
1558 journal = "Mater. Sci. Eng., C",
1563 note = "Current Trends in Nanoscience - from Materials to
1566 doi = "DOI: 10.1016/j.msec.2005.09.099",
1567 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1568 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1570 notes = "c int diffusion barrier",
1574 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1575 application in buffer layer for Ga{N} epitaxial
1577 journal = "Applied Surface Science",
1582 note = "APHYS'03 Special Issue",
1584 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1585 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1586 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1587 and S. Nishio and K. Yasuda and Y. Ishigami",
1588 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1591 @Article{yamamoto04,
1592 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1593 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1594 implantation into Si(1 1 1) substrate",
1595 journal = "Journal of Crystal Growth",
1600 note = "Proceedings of the 11th Biennial (US) Workshop on
1601 Organometallic Vapor Phase Epitaxy (OMVPE)",
1603 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1604 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1605 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1606 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1607 notes = "gan on 3c-sic",
1611 title = "Substrates for gallium nitride epitaxy",
1612 journal = "Materials Science and Engineering: R: Reports",
1619 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1620 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1621 author = "L. Liu and J. H. Edgar",
1622 notes = "gan substrates",
1625 @Article{takeuchi91,
1626 title = "Growth of single crystalline Ga{N} film on Si
1627 substrate using 3{C}-Si{C} as an intermediate layer",
1628 journal = "Journal of Crystal Growth",
1635 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1636 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1637 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1638 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1639 notes = "gan on 3c-sic (first time?)",
1643 author = "B. J. Alder and T. E. Wainwright",
1644 title = "Phase Transition for a Hard Sphere System",
1647 journal = "J. Chem. Phys.",
1650 pages = "1208--1209",
1651 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1652 doi = "10.1063/1.1743957",
1656 author = "B. J. Alder and T. E. Wainwright",
1657 title = "Studies in Molecular Dynamics. {I}. General Method",
1660 journal = "J. Chem. Phys.",
1664 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1668 @Article{horsfield96,
1669 title = "Bond-order potentials: Theory and implementation",
1670 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1671 D. G. Pettifor and M. Aoki",
1672 journal = "Phys. Rev. B",
1675 pages = "12694--12712",
1679 doi = "10.1103/PhysRevB.53.12694",
1680 publisher = "American Physical Society",
1684 title = "Empirical chemical pseudopotential theory of molecular
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1686 author = "G. C. Abell",
1687 journal = "Phys. Rev. B",
1690 pages = "6184--6196",
1694 doi = "10.1103/PhysRevB.31.6184",
1695 publisher = "American Physical Society",
1698 @Article{tersoff_si1,
1699 title = "New empirical model for the structural properties of
1701 author = "J. Tersoff",
1702 journal = "Phys. Rev. Lett.",
1709 doi = "10.1103/PhysRevLett.56.632",
1710 publisher = "American Physical Society",
1714 title = "Development of a many-body Tersoff-type potential for
1716 author = "Brian W. Dodson",
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1720 pages = "2795--2798",
1724 doi = "10.1103/PhysRevB.35.2795",
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1728 @Article{tersoff_si2,
1729 title = "New empirical approach for the structure and energy of
1731 author = "J. Tersoff",
1732 journal = "Phys. Rev. B",
1735 pages = "6991--7000",
1739 doi = "10.1103/PhysRevB.37.6991",
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1743 @Article{tersoff_si3,
1744 title = "Empirical interatomic potential for silicon with
1745 improved elastic properties",
1746 author = "J. Tersoff",
1747 journal = "Phys. Rev. B",
1750 pages = "9902--9905",
1754 doi = "10.1103/PhysRevB.38.9902",
1755 publisher = "American Physical Society",
1759 title = "Empirical Interatomic Potential for Carbon, with
1760 Applications to Amorphous Carbon",
1761 author = "J. Tersoff",
1762 journal = "Phys. Rev. Lett.",
1765 pages = "2879--2882",
1769 doi = "10.1103/PhysRevLett.61.2879",
1770 publisher = "American Physical Society",
1774 title = "Modeling solid-state chemistry: Interatomic potentials
1775 for multicomponent systems",
1776 author = "J. Tersoff",
1777 journal = "Phys. Rev. B",
1780 pages = "5566--5568",
1784 doi = "10.1103/PhysRevB.39.5566",
1785 publisher = "American Physical Society",
1789 title = "Carbon defects and defect reactions in silicon",
1790 author = "J. Tersoff",
1791 journal = "Phys. Rev. Lett.",
1794 pages = "1757--1760",
1798 doi = "10.1103/PhysRevLett.64.1757",
1799 publisher = "American Physical Society",
1803 title = "Point defects and dopant diffusion in silicon",
1804 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1805 journal = "Rev. Mod. Phys.",
1812 doi = "10.1103/RevModPhys.61.289",
1813 publisher = "American Physical Society",
1817 title = "Silicon carbide: synthesis and processing",
1818 journal = "Nucl. Instrum. Methods Phys. Res. B",
1823 note = "Radiation Effects in Insulators",
1825 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1826 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
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1831 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1832 Palmour and J. A. Edmond",
1833 journal = "Proceedings of the IEEE",
1834 title = "Thin film deposition and microelectronic and
1835 optoelectronic device fabrication and characterization
1836 in monocrystalline alpha and beta silicon carbide",
1842 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1843 diode;SiC;dry etching;electrical
1844 contacts;etching;impurity incorporation;optoelectronic
1845 device fabrication;solid-state devices;surface
1846 chemistry;Schottky effect;Schottky gate field effect
1847 transistors;Schottky-barrier
1848 diodes;etching;heterojunction bipolar
1849 transistors;insulated gate field effect
1850 transistors;light emitting diodes;semiconductor
1851 materials;semiconductor thin films;silicon compounds;",
1852 doi = "10.1109/5.90132",
1854 notes = "sic growth methods",
1858 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1859 Lin and B. Sverdlov and M. Burns",
1861 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1862 ZnSe-based semiconductor device technologies",
1865 journal = "J. Appl. Phys.",
1868 pages = "1363--1398",
1869 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1870 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1871 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1873 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1874 doi = "10.1063/1.358463",
1875 notes = "sic intro, properties",
1879 author = "Noch Unbekannt",
1880 title = "How to find references",
1881 journal = "Journal of Applied References",
1888 title = "Atomistic simulation of thermomechanical properties of
1890 author = "Meijie Tang and Sidney Yip",
1891 journal = "Phys. Rev. B",
1894 pages = "15150--15159",
1897 doi = "10.1103/PhysRevB.52.15150",
1898 notes = "modified tersoff, scale cutoff with volume, promising
1899 tersoff reparametrization",
1900 publisher = "American Physical Society",
1904 title = "Silicon carbide as a new {MEMS} technology",
1905 journal = "Sensors and Actuators A: Physical",
1911 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1912 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1913 author = "Pasqualina M. Sarro",
1915 keywords = "Silicon carbide",
1916 keywords = "Micromachining",
1917 keywords = "Mechanical stress",
1921 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1922 semiconductor for high-temperature applications: {A}
1924 journal = "Solid-State Electronics",
1927 pages = "1409--1422",
1930 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1931 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1932 author = "J. B. Casady and R. W. Johnson",
1933 notes = "sic intro",
1936 @Article{giancarli98,
1937 title = "Design requirements for Si{C}/Si{C} composites
1938 structural material in fusion power reactor blankets",
1939 journal = "Fusion Engineering and Design",
1945 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1946 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1947 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1948 Marois and N. B. Morley and J. F. Salavy",
1952 title = "Electrical and optical characterization of Si{C}",
1953 journal = "Physica B: Condensed Matter",
1959 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1960 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1961 author = "G. Pensl and W. J. Choyke",
1965 title = "Investigation of growth processes of ingots of silicon
1966 carbide single crystals",
1967 journal = "J. Cryst. Growth",
1972 notes = "modified lely process",
1974 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1975 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1976 author = "Yu. M. Tairov and V. F. Tsvetkov",
1980 title = "General principles of growing large-size single
1981 crystals of various silicon carbide polytypes",
1982 journal = "Journal of Crystal Growth",
1989 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1990 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1991 author = "Yu.M. Tairov and V. F. Tsvetkov",
1995 title = "Si{C} boule growth by sublimation vapor transport",
1996 journal = "Journal of Crystal Growth",
2003 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2004 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2005 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2006 R. H. Hopkins and W. J. Choyke",
2010 title = "Growth of large Si{C} single crystals",
2011 journal = "Journal of Crystal Growth",
2018 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2019 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2020 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2021 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2026 title = "Control of polytype formation by surface energy
2027 effects during the growth of Si{C} monocrystals by the
2028 sublimation method",
2029 journal = "Journal of Crystal Growth",
2036 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2037 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2038 author = "R. A. Stein and P. Lanig",
2039 notes = "6h and 4h, sublimation technique",
2043 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2046 title = "Production of large-area single-crystal wafers of
2047 cubic Si{C} for semiconductor devices",
2050 journal = "Appl. Phys. Lett.",
2054 keywords = "silicon carbides; layers; chemical vapor deposition;
2056 URL = "http://link.aip.org/link/?APL/42/460/1",
2057 doi = "10.1063/1.93970",
2058 notes = "cvd of 3c-sic on si, sic buffer layer",
2062 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2063 and Hiroyuki Matsunami",
2065 title = "Epitaxial growth and electric characteristics of cubic
2069 journal = "J. Appl. Phys.",
2072 pages = "4889--4893",
2073 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2074 doi = "10.1063/1.338355",
2075 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2080 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2082 title = "Growth and Characterization of Cubic Si{C}
2083 Single-Crystal Films on Si",
2086 journal = "Journal of The Electrochemical Society",
2089 pages = "1558--1565",
2090 keywords = "semiconductor materials; silicon compounds; carbon
2091 compounds; crystal morphology; electron mobility",
2092 URL = "http://link.aip.org/link/?JES/134/1558/1",
2093 doi = "10.1149/1.2100708",
2094 notes = "blue light emitting diodes (led)",
2097 @Article{powell87_2,
2098 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2099 C. M. Chorey and T. T. Cheng and P. Pirouz",
2101 title = "Improved beta-Si{C} heteroepitaxial films using
2102 off-axis Si substrates",
2105 journal = "Applied Physics Letters",
2109 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2110 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2111 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2112 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2113 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2114 URL = "http://link.aip.org/link/?APL/51/823/1",
2115 doi = "10.1063/1.98824",
2116 notes = "improved sic on off-axis si substrates, reduced apbs",
2120 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2121 journal = "Journal of Crystal Growth",
2128 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2129 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2130 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2132 notes = "step-controlled epitaxy model",
2136 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2137 and Hiroyuki Matsunami",
2138 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2142 journal = "J. Appl. Phys.",
2146 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2147 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2149 URL = "http://link.aip.org/link/?JAP/73/726/1",
2150 doi = "10.1063/1.353329",
2151 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2154 @Article{powell90_2,
2155 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2156 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2157 Yoganathan and J. Yang and P. Pirouz",
2159 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2160 vicinal (0001) 6{H}-Si{C} wafers",
2163 journal = "Applied Physics Letters",
2166 pages = "1442--1444",
2167 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2168 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2169 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2170 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2171 URL = "http://link.aip.org/link/?APL/56/1442/1",
2172 doi = "10.1063/1.102492",
2173 notes = "cvd of 6h-sic on 6h-sic",
2177 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2179 title = "Chemical vapor deposition and characterization of
2180 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2184 journal = "Journal of Applied Physics",
2187 pages = "2672--2679",
2188 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2189 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2190 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2191 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2192 PHASE EPITAXY; CRYSTAL ORIENTATION",
2193 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2194 doi = "10.1063/1.341608",
2198 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2199 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2200 Yoganathan and J. Yang and P. Pirouz",
2202 title = "Growth of improved quality 3{C}-Si{C} films on
2203 6{H}-Si{C} substrates",
2206 journal = "Appl. Phys. Lett.",
2209 pages = "1353--1355",
2210 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2211 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2212 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2214 URL = "http://link.aip.org/link/?APL/56/1353/1",
2215 doi = "10.1063/1.102512",
2216 notes = "cvd of 3c-sic on 6h-sic",
2220 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2221 Rozgonyi and K. L. More",
2223 title = "An examination of double positioning boundaries and
2224 interface misfit in beta-Si{C} films on alpha-Si{C}
2228 journal = "Journal of Applied Physics",
2231 pages = "2645--2650",
2232 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2233 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2234 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2235 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2236 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2237 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2238 doi = "10.1063/1.341004",
2242 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2243 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2244 and W. J. Choyke and L. Clemen and M. Yoganathan",
2246 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2247 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2250 journal = "Applied Physics Letters",
2254 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2255 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2256 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2257 URL = "http://link.aip.org/link/?APL/59/333/1",
2258 doi = "10.1063/1.105587",
2262 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2263 Thokala and M. J. Loboda",
2265 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2266 films on 6{H}-Si{C} by chemical vapor deposition from
2270 journal = "J. Appl. Phys.",
2273 pages = "1271--1273",
2274 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2275 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2277 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2278 doi = "10.1063/1.360368",
2279 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2283 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2284 properties of its p-n junction",
2285 journal = "Journal of Crystal Growth",
2292 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2293 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2294 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2296 notes = "first time ssmbe of 3c-sic on 6h-sic",
2300 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2301 [alpha]-Si{C}(0001) at low temperatures by solid-source
2302 molecular beam epitaxy",
2303 journal = "J. Cryst. Growth",
2309 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2310 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2311 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2312 Schr{\"{o}}ter and W. Richter",
2313 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2316 @Article{fissel95_apl,
2317 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2319 title = "Low-temperature growth of Si{C} thin films on Si and
2320 6{H}--Si{C} by solid-source molecular beam epitaxy",
2323 journal = "Appl. Phys. Lett.",
2326 pages = "3182--3184",
2327 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2329 URL = "http://link.aip.org/link/?APL/66/3182/1",
2330 doi = "10.1063/1.113716",
2331 notes = "mbe 3c-sic on si and 6h-sic",
2335 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2336 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2338 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2339 migration enhanced epitaxy controlled to an atomic
2340 level using surface superstructures",
2343 journal = "Applied Physics Letters",
2346 pages = "1204--1206",
2347 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2348 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2350 URL = "http://link.aip.org/link/?APL/68/1204/1",
2351 doi = "10.1063/1.115969",
2352 notes = "ss mbe sic, superstructure, reconstruction",
2356 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2357 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2358 C. M. Bertoni and A. Catellani",
2359 journal = "Phys. Rev. Lett.",
2366 doi = "10.1103/PhysRevLett.91.136101",
2367 publisher = "American Physical Society",
2368 notes = "dft calculations mbe sic growth",
2372 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2374 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2378 journal = "Appl. Phys. Lett.",
2382 URL = "http://link.aip.org/link/?APL/18/509/1",
2383 doi = "10.1063/1.1653516",
2384 notes = "first time sic by ibs, follow cites for precipitation
2389 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2390 and E. V. Lubopytova",
2391 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2392 by ion implantation",
2393 publisher = "Taylor \& Francis",
2395 journal = "Radiation Effects",
2399 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2400 notes = "3c-sic for different temperatures, amorphous, poly,
2401 single crystalline",
2404 @Article{akimchenko80,
2405 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2406 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2407 title = "Structure and optical properties of silicon implanted
2408 by high doses of 70 and 310 ke{V} carbon ions",
2409 publisher = "Taylor \& Francis",
2411 journal = "Radiation Effects",
2415 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2416 notes = "3c-sic nucleation by thermal spikes",
2420 title = "Structure and annealing properties of silicon carbide
2421 thin layers formed by implantation of carbon ions in
2423 journal = "Thin Solid Films",
2430 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2431 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2432 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2437 title = "Characteristics of the synthesis of [beta]-Si{C} by
2438 the implantation of carbon ions into silicon",
2439 journal = "Thin Solid Films",
2446 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2447 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2448 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2453 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2454 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2455 Chater and J. A. Iulner and J. Davis",
2456 title = "Formation mechanisms and structures of insulating
2457 compounds formed in silicon by ion beam synthesis",
2458 publisher = "Taylor \& Francis",
2460 journal = "Radiation Effects",
2464 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2465 notes = "ibs, comparison with sio and sin, higher temp or time,
2466 no c redistribution",
2470 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2471 J. Davis and G. E. Celler",
2473 title = "Formation of buried layers of beta-Si{C} using ion
2474 beam synthesis and incoherent lamp annealing",
2477 journal = "Appl. Phys. Lett.",
2480 pages = "2242--2244",
2481 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2482 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2483 URL = "http://link.aip.org/link/?APL/51/2242/1",
2484 doi = "10.1063/1.98953",
2485 notes = "nice tem images, sic by ibs",
2489 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2490 and M. Olivier and A. M. Papon and G. Rolland",
2492 title = "High-temperature ion beam synthesis of cubic Si{C}",
2495 journal = "Journal of Applied Physics",
2498 pages = "2908--2912",
2499 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2500 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2501 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2502 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2503 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2504 REACTIONS; MONOCRYSTALS",
2505 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2506 doi = "10.1063/1.346092",
2507 notes = "triple energy implantation to overcome high annealing
2512 author = "R. I. Scace and G. A. Slack",
2514 title = "Solubility of Carbon in Silicon and Germanium",
2517 journal = "J. Chem. Phys.",
2520 pages = "1551--1555",
2521 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2522 doi = "10.1063/1.1730236",
2523 notes = "solubility of c in c-si, si-c phase diagram",
2527 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2529 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2530 Laboratories Eindhoven Netherlands Eindhoven
2532 title = "Boron implantations in silicon: {A} comparison of
2533 charge carrier and boron concentration profiles",
2534 journal = "Applied Physics A: Materials Science \& Processing",
2535 publisher = "Springer Berlin / Heidelberg",
2537 keyword = "Physics and Astronomy",
2541 URL = "http://dx.doi.org/10.1007/BF00884267",
2542 note = "10.1007/BF00884267",
2544 notes = "first time ted (only for boron?)",
2548 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2551 title = "Rapid annealing and the anomalous diffusion of ion
2552 implanted boron into silicon",
2555 journal = "Applied Physics Letters",
2559 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2560 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2561 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2562 URL = "http://link.aip.org/link/?APL/50/416/1",
2563 doi = "10.1063/1.98160",
2564 notes = "ted of boron in si",
2568 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2571 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2572 time, and matrix dependence of atomic and electrical
2576 journal = "Journal of Applied Physics",
2579 pages = "6191--6198",
2580 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2581 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2582 CRYSTALS; AMORPHIZATION",
2583 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2584 doi = "10.1063/1.346910",
2585 notes = "ted of boron in si",
2589 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2590 F. W. Saris and W. Vandervorst",
2592 title = "Role of {C} and {B} clusters in transient diffusion of
2596 journal = "Appl. Phys. Lett.",
2599 pages = "1150--1152",
2600 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2601 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2603 URL = "http://link.aip.org/link/?APL/68/1150/1",
2604 doi = "10.1063/1.115706",
2605 notes = "suppression of transient enhanced diffusion (ted)",
2609 title = "Implantation and transient boron diffusion: the role
2610 of the silicon self-interstitial",
2611 journal = "Nucl. Instrum. Methods Phys. Res. B",
2616 note = "Selected Papers of the Tenth International Conference
2617 on Ion Implantation Technology (IIT '94)",
2619 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2620 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2621 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2626 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2627 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2628 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2631 title = "Physical mechanisms of transient enhanced dopant
2632 diffusion in ion-implanted silicon",
2635 journal = "J. Appl. Phys.",
2638 pages = "6031--6050",
2639 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2640 doi = "10.1063/1.364452",
2641 notes = "ted, transient enhanced diffusion, c silicon trap",
2645 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2647 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2648 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2651 journal = "Appl. Phys. Lett.",
2655 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2656 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2657 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2659 URL = "http://link.aip.org/link/?APL/64/324/1",
2660 doi = "10.1063/1.111195",
2661 notes = "beta sic nano crystals in si, mbe, annealing",
2665 author = "Richard A. Soref",
2667 title = "Optical band gap of the ternary semiconductor Si[sub 1
2668 - x - y]Ge[sub x]{C}[sub y]",
2671 journal = "J. Appl. Phys.",
2674 pages = "2470--2472",
2675 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2676 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2678 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2679 doi = "10.1063/1.349403",
2680 notes = "band gap of strained si by c",
2684 author = "E Kasper",
2685 title = "Superlattices of group {IV} elements, a new
2686 possibility to produce direct band gap material",
2687 journal = "Physica Scripta",
2690 URL = "http://stacks.iop.org/1402-4896/T35/232",
2692 notes = "superlattices, convert indirect band gap into a
2697 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2700 title = "Growth and strain compensation effects in the ternary
2701 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2704 journal = "Applied Physics Letters",
2707 pages = "3033--3035",
2708 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2709 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2710 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2711 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2713 URL = "http://link.aip.org/link/?APL/60/3033/1",
2714 doi = "10.1063/1.106774",
2718 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2721 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2725 journal = "J. Vac. Sci. Technol. B",
2728 pages = "1064--1068",
2729 location = "Ottawa (Canada)",
2730 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2731 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2732 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2733 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2734 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2735 doi = "10.1116/1.587008",
2736 notes = "substitutional c in si by mbe",
2739 @Article{powell93_2,
2740 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2741 of the ternary system",
2742 journal = "Journal of Crystal Growth",
2749 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2750 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2751 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2756 author = "H. J. Osten",
2757 title = "Modification of Growth Modes in Lattice-Mismatched
2758 Epitaxial Systems: Si/Ge",
2759 journal = "physica status solidi (a)",
2762 publisher = "WILEY-VCH Verlag",
2764 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2765 doi = "10.1002/pssa.2211450203",
2770 @Article{dietrich94,
2771 title = "Lattice distortion in a strain-compensated
2772 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2773 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2774 Methfessel and P. Zaumseil",
2775 journal = "Phys. Rev. B",
2778 pages = "17185--17190",
2782 doi = "10.1103/PhysRevB.49.17185",
2783 publisher = "American Physical Society",
2787 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2789 title = "Growth of an inverse tetragonal distorted SiGe layer
2790 on Si(001) by adding small amounts of carbon",
2793 journal = "Applied Physics Letters",
2796 pages = "3440--3442",
2797 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2798 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2799 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2801 URL = "http://link.aip.org/link/?APL/64/3440/1",
2802 doi = "10.1063/1.111235",
2803 notes = "inversely strained / distorted heterostructure",
2807 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2808 LeGoues and J. C. Tsang and F. Cardone",
2810 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2811 molecular beam epitaxy",
2814 journal = "Applied Physics Letters",
2818 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2819 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2820 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2821 FILM GROWTH; MICROSTRUCTURE",
2822 URL = "http://link.aip.org/link/?APL/60/356/1",
2823 doi = "10.1063/1.106655",
2827 author = "H. J. Osten and J. Griesche and S. Scalese",
2829 title = "Substitutional carbon incorporation in epitaxial
2830 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2831 molecular beam epitaxy",
2834 journal = "Appl. Phys. Lett.",
2838 keywords = "molecular beam epitaxial growth; semiconductor growth;
2839 wide band gap semiconductors; interstitials; silicon
2841 URL = "http://link.aip.org/link/?APL/74/836/1",
2842 doi = "10.1063/1.123384",
2843 notes = "substitutional c in si by mbe",
2847 author = "M. Born and R. Oppenheimer",
2848 title = "Zur Quantentheorie der Molekeln",
2849 journal = "Annalen der Physik",
2852 publisher = "WILEY-VCH Verlag",
2854 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2855 doi = "10.1002/andp.19273892002",
2860 @Article{hohenberg64,
2861 title = "Inhomogeneous Electron Gas",
2862 author = "P. Hohenberg and W. Kohn",
2863 journal = "Phys. Rev.",
2866 pages = "B864--B871",
2870 doi = "10.1103/PhysRev.136.B864",
2871 publisher = "American Physical Society",
2872 notes = "density functional theory, dft",
2876 title = "Self-Consistent Equations Including Exchange and
2877 Correlation Effects",
2878 author = "W. Kohn and L. J. Sham",
2879 journal = "Phys. Rev.",
2882 pages = "A1133--A1138",
2886 doi = "10.1103/PhysRev.140.A1133",
2887 publisher = "American Physical Society",
2888 notes = "dft, exchange and correlation",
2892 title = "Strain-stabilized highly concentrated pseudomorphic
2893 $Si1-x$$Cx$ layers in Si",
2894 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2896 journal = "Phys. Rev. Lett.",
2899 pages = "3578--3581",
2903 doi = "10.1103/PhysRevLett.72.3578",
2904 publisher = "American Physical Society",
2905 notes = "high c concentration in si, heterostructure, strained
2910 title = "Phosphorous Doping of Strain-Induced
2911 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
2912 by Low-Temperature Chemical Vapor Deposition",
2913 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
2914 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
2915 journal = "Japanese Journal of Applied Physics",
2917 number = "Part 1, No. 4B",
2918 pages = "2472--2475",
2921 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
2922 doi = "10.1143/JJAP.41.2472",
2923 publisher = "The Japan Society of Applied Physics",
2924 notes = "experimental charge carrier mobility in strained si",
2928 title = "Electron Transport Model for Strained Silicon-Carbon
2930 author = "Shu-Tong Chang and Chung-Yi Lin",
2931 journal = "Japanese J. Appl. Phys.",
2934 pages = "2257--2262",
2937 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2938 doi = "10.1143/JJAP.44.2257",
2939 publisher = "The Japan Society of Applied Physics",
2940 notes = "enhance of electron mobility in strained si",
2943 @Article{kissinger94,
2944 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
2947 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
2948 y] layers on Si(001)",
2951 journal = "Applied Physics Letters",
2954 pages = "3356--3358",
2955 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
2956 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
2957 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
2958 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
2959 URL = "http://link.aip.org/link/?APL/65/3356/1",
2960 doi = "10.1063/1.112390",
2961 notes = "strained si influence on optical properties",
2965 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
2968 title = "Substitutional versus interstitial carbon
2969 incorporation during pseudomorphic growth of Si[sub 1 -
2970 y]{C}[sub y] on Si(001)",
2973 journal = "Journal of Applied Physics",
2976 pages = "6711--6715",
2977 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
2978 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
2980 URL = "http://link.aip.org/link/?JAP/80/6711/1",
2981 doi = "10.1063/1.363797",
2982 notes = "mbe substitutional vs interstitial c incorporation",
2986 author = "H. J. Osten and P. Gaworzewski",
2988 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2989 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2993 journal = "J. Appl. Phys.",
2996 pages = "4977--4981",
2997 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2998 semiconductors; semiconductor epitaxial layers; carrier
2999 density; Hall mobility; interstitials; defect states",
3000 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3001 doi = "10.1063/1.366364",
3002 notes = "charge transport in strained si",
3006 title = "Carbon-mediated aggregation of self-interstitials in
3007 silicon: {A} large-scale molecular dynamics study",
3008 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3009 journal = "Phys. Rev. B",
3016 doi = "10.1103/PhysRevB.69.155214",
3017 publisher = "American Physical Society",
3018 notes = "simulation using promising tersoff reparametrization",
3022 title = "Event-Based Relaxation of Continuous Disordered
3024 author = "G. T. Barkema and Normand Mousseau",
3025 journal = "Phys. Rev. Lett.",
3028 pages = "4358--4361",
3032 doi = "10.1103/PhysRevLett.77.4358",
3033 publisher = "American Physical Society",
3034 notes = "activation relaxation technique, art, speed up slow
3039 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3040 Minoukadeh and F. Willaime",
3042 title = "Some improvements of the activation-relaxation
3043 technique method for finding transition pathways on
3044 potential energy surfaces",
3047 journal = "J. Chem. Phys.",
3053 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3054 surfaces; vacancies (crystal)",
3055 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3056 doi = "10.1063/1.3088532",
3057 notes = "improvements to art, refs for methods to find
3058 transition pathways",
3061 @Article{parrinello81,
3062 author = "M. Parrinello and A. Rahman",
3064 title = "Polymorphic transitions in single crystals: {A} new
3065 molecular dynamics method",
3068 journal = "J. Appl. Phys.",
3071 pages = "7182--7190",
3072 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3073 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3074 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3075 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3076 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3078 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3079 doi = "10.1063/1.328693",
3082 @Article{stillinger85,
3083 title = "Computer simulation of local order in condensed phases
3085 author = "Frank H. Stillinger and Thomas A. Weber",
3086 journal = "Phys. Rev. B",
3089 pages = "5262--5271",
3093 doi = "10.1103/PhysRevB.31.5262",
3094 publisher = "American Physical Society",
3098 title = "Empirical potential for hydrocarbons for use in
3099 simulating the chemical vapor deposition of diamond
3101 author = "Donald W. Brenner",
3102 journal = "Phys. Rev. B",
3105 pages = "9458--9471",
3109 doi = "10.1103/PhysRevB.42.9458",
3110 publisher = "American Physical Society",
3111 notes = "brenner hydro carbons",
3115 title = "Modeling of Covalent Bonding in Solids by Inversion of
3116 Cohesive Energy Curves",
3117 author = "Martin Z. Bazant and Efthimios Kaxiras",
3118 journal = "Phys. Rev. Lett.",
3121 pages = "4370--4373",
3125 doi = "10.1103/PhysRevLett.77.4370",
3126 publisher = "American Physical Society",
3127 notes = "first si edip",
3131 title = "Environment-dependent interatomic potential for bulk
3133 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3135 journal = "Phys. Rev. B",
3138 pages = "8542--8552",
3142 doi = "10.1103/PhysRevB.56.8542",
3143 publisher = "American Physical Society",
3144 notes = "second si edip",
3148 title = "Interatomic potential for silicon defects and
3150 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3151 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3152 journal = "Phys. Rev. B",
3155 pages = "2539--2550",
3159 doi = "10.1103/PhysRevB.58.2539",
3160 publisher = "American Physical Society",
3161 notes = "latest si edip, good dislocation explanation",
3165 title = "{PARCAS} molecular dynamics code",
3166 author = "K. Nordlund",
3171 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3173 author = "Arthur F. Voter",
3174 journal = "Phys. Rev. Lett.",
3177 pages = "3908--3911",
3181 doi = "10.1103/PhysRevLett.78.3908",
3182 publisher = "American Physical Society",
3183 notes = "hyperdynamics, accelerated md",
3187 author = "Arthur F. Voter",
3189 title = "A method for accelerating the molecular dynamics
3190 simulation of infrequent events",
3193 journal = "J. Chem. Phys.",
3196 pages = "4665--4677",
3197 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3198 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3199 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3200 energy functions; surface diffusion; reaction kinetics
3201 theory; potential energy surfaces",
3202 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3203 doi = "10.1063/1.473503",
3204 notes = "improved hyperdynamics md",
3207 @Article{sorensen2000,
3208 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3210 title = "Temperature-accelerated dynamics for simulation of
3214 journal = "J. Chem. Phys.",
3217 pages = "9599--9606",
3218 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3219 MOLECULAR DYNAMICS METHOD; surface diffusion",
3220 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3221 doi = "10.1063/1.481576",
3222 notes = "temperature accelerated dynamics, tad",
3226 title = "Parallel replica method for dynamics of infrequent
3228 author = "Arthur F. Voter",
3229 journal = "Phys. Rev. B",
3232 pages = "R13985--R13988",
3236 doi = "10.1103/PhysRevB.57.R13985",
3237 publisher = "American Physical Society",
3238 notes = "parallel replica method, accelerated md",
3242 author = "Xiongwu Wu and Shaomeng Wang",
3244 title = "Enhancing systematic motion in molecular dynamics
3248 journal = "J. Chem. Phys.",
3251 pages = "9401--9410",
3252 keywords = "molecular dynamics method; argon; Lennard-Jones
3253 potential; crystallisation; liquid theory",
3254 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3255 doi = "10.1063/1.478948",
3256 notes = "self guided md, sgmd, accelerated md, enhancing
3260 @Article{choudhary05,
3261 author = "Devashish Choudhary and Paulette Clancy",
3263 title = "Application of accelerated molecular dynamics schemes
3264 to the production of amorphous silicon",
3267 journal = "J. Chem. Phys.",
3273 keywords = "molecular dynamics method; silicon; glass structure;
3274 amorphous semiconductors",
3275 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3276 doi = "10.1063/1.1878733",
3277 notes = "explanation of sgmd and hyper md, applied to amorphous
3282 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3284 title = "Carbon precipitation in silicon: Why is it so
3288 journal = "Appl. Phys. Lett.",
3291 pages = "3336--3338",
3292 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3293 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3295 URL = "http://link.aip.org/link/?APL/62/3336/1",
3296 doi = "10.1063/1.109063",
3297 notes = "interfacial energy of cubic sic and si, si self
3298 interstitials necessary for precipitation, volume
3299 decrease, high interface energy",
3302 @Article{chaussende08,
3303 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3304 journal = "J. Cryst. Growth",
3309 note = "Proceedings of the E-MRS Conference, Symposium G -
3310 Substrates of Wide Bandgap Materials",
3312 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3313 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3314 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3315 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3316 and A. Andreadou and E. K. Polychroniadis and C.
3317 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3318 notes = "3c-sic crystal growth, sic fabrication + links,
3322 @Article{chaussende07,
3323 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3324 title = "Status of Si{C} bulk growth processes",
3325 journal = "Journal of Physics D: Applied Physics",
3329 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3331 notes = "review of sic single crystal growth methods, process
3336 title = "Forces in Molecules",
3337 author = "R. P. Feynman",
3338 journal = "Phys. Rev.",
3345 doi = "10.1103/PhysRev.56.340",
3346 publisher = "American Physical Society",
3347 notes = "hellmann feynman forces",
3351 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3352 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3353 their Contrasting Properties",
3354 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3356 journal = "Phys. Rev. Lett.",
3363 doi = "10.1103/PhysRevLett.84.943",
3364 publisher = "American Physical Society",
3365 notes = "si sio2 and sic sio2 interface",
3368 @Article{djurabekova08,
3369 title = "Atomistic simulation of the interface structure of Si
3370 nanocrystals embedded in amorphous silica",
3371 author = "Flyura Djurabekova and Kai Nordlund",
3372 journal = "Phys. Rev. B",
3379 doi = "10.1103/PhysRevB.77.115325",
3380 publisher = "American Physical Society",
3381 notes = "nc-si in sio2, interface energy, nc construction,
3382 angular distribution, coordination",
3386 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3387 W. Liang and J. Zou",
3389 title = "Nature of interfacial defects and their roles in
3390 strain relaxation at highly lattice mismatched
3391 3{C}-Si{C}/Si (001) interface",
3394 journal = "J. Appl. Phys.",
3400 keywords = "anelastic relaxation; crystal structure; dislocations;
3401 elemental semiconductors; semiconductor growth;
3402 semiconductor thin films; silicon; silicon compounds;
3403 stacking faults; wide band gap semiconductors",
3404 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3405 doi = "10.1063/1.3234380",
3406 notes = "sic/si interface, follow refs, tem image
3407 deconvolution, dislocation defects",
3410 @Article{kitabatake93,
3411 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3414 title = "Simulations and experiments of Si{C} heteroepitaxial
3415 growth on Si(001) surface",
3418 journal = "J. Appl. Phys.",
3421 pages = "4438--4445",
3422 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3423 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3424 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3425 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3426 doi = "10.1063/1.354385",
3427 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3431 @Article{kitabatake97,
3432 author = "Makoto Kitabatake",
3433 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3434 Heteroepitaxial Growth",
3435 publisher = "WILEY-VCH Verlag",
3437 journal = "physica status solidi (b)",
3440 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3441 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3442 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3446 title = "Strain relaxation and thermal stability of the
3447 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3449 journal = "Thin Solid Films",
3456 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3457 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3458 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3459 keywords = "Strain relaxation",
3460 keywords = "Interfaces",
3461 keywords = "Thermal stability",
3462 keywords = "Molecular dynamics",
3463 notes = "tersoff sic/si interface study",
3467 title = "Ab initio Study of Misfit Dislocations at the
3468 $Si{C}/Si(001)$ Interface",
3469 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3471 journal = "Phys. Rev. Lett.",
3478 doi = "10.1103/PhysRevLett.89.156101",
3479 publisher = "American Physical Society",
3480 notes = "sic/si interface study",
3483 @Article{pizzagalli03,
3484 title = "Theoretical investigations of a highly mismatched
3485 interface: Si{C}/Si(001)",
3486 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3488 journal = "Phys. Rev. B",
3495 doi = "10.1103/PhysRevB.68.195302",
3496 publisher = "American Physical Society",
3497 notes = "tersoff md and ab initio sic/si interface study",
3501 title = "Atomic configurations of dislocation core and twin
3502 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3503 electron microscopy",
3504 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3505 H. Zheng and J. W. Liang",
3506 journal = "Phys. Rev. B",
3513 doi = "10.1103/PhysRevB.75.184103",
3514 publisher = "American Physical Society",
3515 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3519 @Article{hornstra58,
3520 title = "Dislocations in the diamond lattice",
3521 journal = "Journal of Physics and Chemistry of Solids",
3528 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3529 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3530 author = "J. Hornstra",
3531 notes = "dislocations in diamond lattice",
3535 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3536 Ion `Hot' Implantation",
3537 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3538 Hirao and Naoki Arai and Tomio Izumi",
3539 journal = "Japanese J. Appl. Phys.",
3541 number = "Part 1, No. 2A",
3545 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3546 doi = "10.1143/JJAP.31.343",
3547 publisher = "The Japan Society of Applied Physics",
3548 notes = "c-c bonds in c implanted si, hot implantation
3549 efficiency, c-c hard to break by thermal annealing",
3552 @Article{eichhorn99,
3553 author = "F. Eichhorn and N. Schell and W. Matz and R.
3556 title = "Strain and Si{C} particle formation in silicon
3557 implanted with carbon ions of medium fluence studied by
3558 synchrotron x-ray diffraction",
3561 journal = "J. Appl. Phys.",
3564 pages = "4184--4187",
3565 keywords = "silicon; carbon; elemental semiconductors; chemical
3566 interdiffusion; ion implantation; X-ray diffraction;
3567 precipitation; semiconductor doping",
3568 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3569 doi = "10.1063/1.371344",
3570 notes = "sic conversion by ibs, detected substitutional carbon,
3571 expansion of si lattice",
3574 @Article{eichhorn02,
3575 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3576 Metzger and W. Matz and R. K{\"{o}}gler",
3578 title = "Structural relation between Si and Si{C} formed by
3579 carbon ion implantation",
3582 journal = "J. Appl. Phys.",
3585 pages = "1287--1292",
3586 keywords = "silicon compounds; wide band gap semiconductors; ion
3587 implantation; annealing; X-ray scattering; transmission
3588 electron microscopy",
3589 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3590 doi = "10.1063/1.1428105",
3591 notes = "3c-sic alignement to si host in ibs depending on
3592 temperature, might explain c into c sub trafo",
3596 author = "G Lucas and M Bertolus and L Pizzagalli",
3597 title = "An environment-dependent interatomic potential for
3598 silicon carbide: calculation of bulk properties,
3599 high-pressure phases, point and extended defects, and
3600 amorphous structures",
3601 journal = "J. Phys.: Condens. Matter",
3605 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3611 author = "J Godet and L Pizzagalli and S Brochard and P
3613 title = "Comparison between classical potentials and ab initio
3614 methods for silicon under large shear",
3615 journal = "J. Phys.: Condens. Matter",
3619 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3621 notes = "comparison of empirical potentials, stillinger weber,
3622 edip, tersoff, ab initio",
3625 @Article{moriguchi98,
3626 title = "Verification of Tersoff's Potential for Static
3627 Structural Analysis of Solids of Group-{IV} Elements",
3628 author = "Koji Moriguchi and Akira Shintani",
3629 journal = "Japanese J. Appl. Phys.",
3631 number = "Part 1, No. 2",
3635 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3636 doi = "10.1143/JJAP.37.414",
3637 publisher = "The Japan Society of Applied Physics",
3638 notes = "tersoff stringent test",
3641 @Article{mazzarolo01,
3642 title = "Low-energy recoils in crystalline silicon: Quantum
3644 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3645 Lulli and Eros Albertazzi",
3646 journal = "Phys. Rev. B",
3653 doi = "10.1103/PhysRevB.63.195207",
3654 publisher = "American Physical Society",
3657 @Article{holmstroem08,
3658 title = "Threshold defect production in silicon determined by
3659 density functional theory molecular dynamics
3661 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3662 journal = "Phys. Rev. B",
3669 doi = "10.1103/PhysRevB.78.045202",
3670 publisher = "American Physical Society",
3671 notes = "threshold displacement comparison empirical and ab
3675 @Article{nordlund97,
3676 title = "Repulsive interatomic potentials calculated using
3677 Hartree-Fock and density-functional theory methods",
3678 journal = "Nucl. Instrum. Methods Phys. Res. B",
3685 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3686 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3687 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3688 notes = "repulsive ab initio potential",
3692 title = "Efficiency of ab-initio total energy calculations for
3693 metals and semiconductors using a plane-wave basis
3695 journal = "Comput. Mater. Sci.",
3702 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3703 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3704 author = "G. Kresse and J. Furthm{\"{u}}ller",
3709 title = "Projector augmented-wave method",
3710 author = "P. E. Bl{\"o}chl",
3711 journal = "Phys. Rev. B",
3714 pages = "17953--17979",
3718 doi = "10.1103/PhysRevB.50.17953",
3719 publisher = "American Physical Society",
3720 notes = "paw method",
3724 title = "Norm-Conserving Pseudopotentials",
3725 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3726 journal = "Phys. Rev. Lett.",
3729 pages = "1494--1497",
3733 doi = "10.1103/PhysRevLett.43.1494",
3734 publisher = "American Physical Society",
3735 notes = "norm-conserving pseudopotentials",
3738 @Article{vanderbilt90,
3739 title = "Soft self-consistent pseudopotentials in a generalized
3740 eigenvalue formalism",
3741 author = "David Vanderbilt",
3742 journal = "Phys. Rev. B",
3745 pages = "7892--7895",
3749 doi = "10.1103/PhysRevB.41.7892",
3750 publisher = "American Physical Society",
3751 notes = "vasp pseudopotentials",
3755 title = "Accurate and simple density functional for the
3756 electronic exchange energy: Generalized gradient
3758 author = "John P. Perdew and Yue Wang",
3759 journal = "Phys. Rev. B",
3762 pages = "8800--8802",
3766 doi = "10.1103/PhysRevB.33.8800",
3767 publisher = "American Physical Society",
3768 notes = "rapid communication gga",
3772 title = "Generalized gradient approximations for exchange and
3773 correlation: {A} look backward and forward",
3774 journal = "Physica B: Condensed Matter",
3781 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3782 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3783 author = "John P. Perdew",
3784 notes = "gga overview",
3788 title = "Atoms, molecules, solids, and surfaces: Applications
3789 of the generalized gradient approximation for exchange
3791 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3792 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3793 and Carlos Fiolhais",
3794 journal = "Phys. Rev. B",
3797 pages = "6671--6687",
3801 doi = "10.1103/PhysRevB.46.6671",
3802 publisher = "American Physical Society",
3803 notes = "gga pw91 (as in vasp)",
3806 @Article{baldereschi73,
3807 title = "Mean-Value Point in the Brillouin Zone",
3808 author = "A. Baldereschi",
3809 journal = "Phys. Rev. B",
3812 pages = "5212--5215",
3816 doi = "10.1103/PhysRevB.7.5212",
3817 publisher = "American Physical Society",
3818 notes = "mean value k point",
3822 title = "Ab initio pseudopotential calculations of dopant
3824 journal = "Comput. Mater. Sci.",
3831 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3832 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3833 author = "Jing Zhu",
3834 keywords = "TED (transient enhanced diffusion)",
3835 keywords = "Boron dopant",
3836 keywords = "Carbon dopant",
3837 keywords = "Defect",
3838 keywords = "ab initio pseudopotential method",
3839 keywords = "Impurity cluster",
3840 notes = "binding of c to si interstitial, c in si defects",
3844 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3846 title = "Si{C} buried layer formation by ion beam synthesis at
3850 journal = "Appl. Phys. Lett.",
3853 pages = "2646--2648",
3854 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3855 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3856 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3857 ELECTRON MICROSCOPY",
3858 URL = "http://link.aip.org/link/?APL/66/2646/1",
3859 doi = "10.1063/1.113112",
3860 notes = "precipitation mechanism by substitutional carbon, si
3861 self interstitials react with further implanted c",
3865 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3866 Kolodzey and A. Hairie",
3868 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3872 journal = "J. Appl. Phys.",
3875 pages = "4631--4633",
3876 keywords = "silicon compounds; precipitation; localised modes;
3877 semiconductor epitaxial layers; infrared spectra;
3878 Fourier transform spectra; thermal stability;
3880 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3881 doi = "10.1063/1.368703",
3882 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3886 author = "R Jones and B J Coomer and P R Briddon",
3887 title = "Quantum mechanical modelling of defects in
3889 journal = "J. Phys.: Condens. Matter",
3893 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3895 notes = "ab inito dft intro, vibrational modes, c defect in
3900 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3901 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3902 J. E. Greene and S. G. Bishop",
3904 title = "Carbon incorporation pathways and lattice sites in
3905 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3906 molecular-beam epitaxy",
3909 journal = "J. Appl. Phys.",
3912 pages = "5716--5727",
3913 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3914 doi = "10.1063/1.1465122",
3915 notes = "c substitutional incorporation pathway, dft and expt",
3919 title = "Dynamic properties of interstitial carbon and
3920 carbon-carbon pair defects in silicon",
3921 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3923 journal = "Phys. Rev. B",
3926 pages = "2188--2194",
3930 doi = "10.1103/PhysRevB.55.2188",
3931 publisher = "American Physical Society",
3932 notes = "ab initio c in si and di-carbon defect, no formation
3933 energies, different migration barriers and paths",
3937 title = "Interstitial carbon and the carbon-carbon pair in
3938 silicon: Semiempirical electronic-structure
3940 author = "Matthew J. Burnard and Gary G. DeLeo",
3941 journal = "Phys. Rev. B",
3944 pages = "10217--10225",
3948 doi = "10.1103/PhysRevB.47.10217",
3949 publisher = "American Physical Society",
3950 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3951 carbon defect, formation energies",
3955 title = "Electronic structure of interstitial carbon in
3957 author = "Morgan Besson and Gary G. DeLeo",
3958 journal = "Phys. Rev. B",
3961 pages = "4028--4033",
3965 doi = "10.1103/PhysRevB.43.4028",
3966 publisher = "American Physical Society",
3970 title = "Review of atomistic simulations of surface diffusion
3971 and growth on semiconductors",
3972 journal = "Comput. Mater. Sci.",
3977 note = "Proceedings of the Workshop on Virtual Molecular Beam
3980 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3981 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3982 author = "Efthimios Kaxiras",
3983 notes = "might contain c 100 db formation energy, overview md,
3984 tight binding, first principles",
3987 @Article{kaukonen98,
3988 title = "Effect of {N} and {B} doping on the growth of {CVD}
3990 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3992 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3993 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3995 journal = "Phys. Rev. B",
3998 pages = "9965--9970",
4002 doi = "10.1103/PhysRevB.57.9965",
4003 publisher = "American Physical Society",
4004 notes = "constrained conjugate gradient relaxation technique
4009 title = "Correlation between the antisite pair and the ${DI}$
4011 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4012 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4014 journal = "Phys. Rev. B",
4021 doi = "10.1103/PhysRevB.67.155203",
4022 publisher = "American Physical Society",
4026 title = "Production and recovery of defects in Si{C} after
4027 irradiation and deformation",
4028 journal = "J. Nucl. Mater.",
4031 pages = "1803--1808",
4035 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4036 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4037 author = "J. Chen and P. Jung and H. Klein",
4041 title = "Accumulation, dynamic annealing and thermal recovery
4042 of ion-beam-induced disorder in silicon carbide",
4043 journal = "Nucl. Instrum. Methods Phys. Res. B",
4050 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4051 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4052 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4055 @Article{bockstedte03,
4056 title = "Ab initio study of the migration of intrinsic defects
4058 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4060 journal = "Phys. Rev. B",
4067 doi = "10.1103/PhysRevB.68.205201",
4068 publisher = "American Physical Society",
4069 notes = "defect migration in sic",
4073 title = "Theoretical study of vacancy diffusion and
4074 vacancy-assisted clustering of antisites in Si{C}",
4075 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4077 journal = "Phys. Rev. B",
4084 doi = "10.1103/PhysRevB.68.155208",
4085 publisher = "American Physical Society",
4089 journal = "Telegrafiya i Telefoniya bez Provodov",
4093 author = "O. V. Lossev",
4097 title = "Luminous carborundum detector and detection effect and
4098 oscillations with crystals",
4099 journal = "Philosophical Magazine Series 7",
4102 pages = "1024--1044",
4104 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4105 author = "O. V. Lossev",
4109 journal = "Physik. Zeitschr.",
4113 author = "O. V. Lossev",
4117 journal = "Physik. Zeitschr.",
4121 author = "O. V. Lossev",
4125 journal = "Physik. Zeitschr.",
4129 author = "O. V. Lossev",
4133 title = "A note on carborundum",
4134 journal = "Electrical World",
4138 author = "H. J. Round",
4141 @Article{vashishath08,
4142 title = "Recent trends in silicon carbide device research",
4143 journal = "Mj. Int. J. Sci. Tech.",
4148 author = "Munish Vashishath and Ashoke K. Chatterjee",
4149 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4150 notes = "sic polytype electronic properties",
4154 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4156 title = "Growth and Properties of beta-Si{C} Single Crystals",
4159 journal = "Journal of Applied Physics",
4163 URL = "http://link.aip.org/link/?JAP/37/333/1",
4164 doi = "10.1063/1.1707837",
4165 notes = "sic melt growth",
4169 author = "A. E. van Arkel and J. H. de Boer",
4170 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4172 publisher = "WILEY-VCH Verlag GmbH",
4174 journal = "Z. Anorg. Chem.",
4177 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4178 doi = "10.1002/zaac.19251480133",
4179 notes = "van arkel apparatus",
4183 author = "K. Moers",
4185 journal = "Z. Anorg. Chem.",
4188 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4193 author = "J. T. Kendall",
4194 title = "Electronic Conduction in Silicon Carbide",
4197 journal = "The Journal of Chemical Physics",
4201 URL = "http://link.aip.org/link/?JCP/21/821/1",
4202 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4207 author = "J. A. Lely",
4209 journal = "Ber. Deut. Keram. Ges.",
4212 notes = "lely sublimation growth process",
4215 @Article{knippenberg63,
4216 author = "W. F. Knippenberg",
4218 journal = "Philips Res. Repts.",
4221 notes = "acheson process",
4224 @Article{hoffmann82,
4225 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4228 title = "Silicon carbide blue light emitting diodes with
4229 improved external quantum efficiency",
4232 journal = "Journal of Applied Physics",
4235 pages = "6962--6967",
4236 keywords = "light emitting diodes; silicon carbides; quantum
4237 efficiency; visible radiation; experimental data;
4238 epitaxy; fabrication; medium temperature; layers;
4239 aluminium; nitrogen; substrates; pn junctions;
4240 electroluminescence; spectra; current density;
4242 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4243 doi = "10.1063/1.330041",
4244 notes = "blue led, sublimation process",
4248 author = "Philip Neudeck",
4249 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4250 Road 44135 Cleveland OH",
4251 title = "Progress in silicon carbide semiconductor electronics
4253 journal = "Journal of Electronic Materials",
4254 publisher = "Springer Boston",
4256 keyword = "Chemistry and Materials Science",
4260 URL = "http://dx.doi.org/10.1007/BF02659688",
4261 note = "10.1007/BF02659688",
4263 notes = "sic data, advantages of 3c sic",
4266 @Article{bhatnagar93,
4267 author = "M. Bhatnagar and B. J. Baliga",
4268 journal = "Electron Devices, IEEE Transactions on",
4269 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4276 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4277 rectifiers;Si;SiC;breakdown voltages;drift region
4278 properties;output characteristics;power MOSFETs;power
4279 semiconductor devices;switching characteristics;thermal
4280 analysis;Schottky-barrier diodes;electric breakdown of
4281 solids;insulated gate field effect transistors;power
4282 transistors;semiconductor materials;silicon;silicon
4283 compounds;solid-state rectifiers;thermal analysis;",
4284 doi = "10.1109/16.199372",
4286 notes = "comparison 3c 6h sic and si devices",
4290 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4291 A. Powell and C. S. Salupo and L. G. Matus",
4292 journal = "Electron Devices, IEEE Transactions on",
4293 title = "Electrical properties of epitaxial 3{C}- and
4294 6{H}-Si{C} p-n junction diodes produced side-by-side on
4295 6{H}-Si{C} substrates",
4301 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4302 C;6H-SiC layers;6H-SiC substrates;CVD
4303 process;SiC;chemical vapor deposition;doping;electrical
4304 properties;epitaxial layers;light
4305 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4306 diodes;polytype;rectification characteristics;reverse
4307 leakage current;reverse voltages;temperature;leakage
4308 currents;power electronics;semiconductor
4309 diodes;semiconductor epitaxial layers;semiconductor
4310 growth;semiconductor materials;silicon
4311 compounds;solid-state rectifiers;substrates;vapour
4312 phase epitaxial growth;",
4313 doi = "10.1109/16.285038",
4315 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4320 author = "N. Schulze and D. L. Barrett and G. Pensl",
4322 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4323 single crystals by physical vapor transport",
4326 journal = "Applied Physics Letters",
4329 pages = "1632--1634",
4330 keywords = "silicon compounds; semiconductor materials;
4331 semiconductor growth; crystal growth from vapour;
4332 photoluminescence; Hall mobility",
4333 URL = "http://link.aip.org/link/?APL/72/1632/1",
4334 doi = "10.1063/1.121136",
4335 notes = "micropipe free 6h-sic pvt growth",
4339 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4341 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4344 journal = "Applied Physics Letters",
4348 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4349 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4350 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4351 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4353 URL = "http://link.aip.org/link/?APL/50/221/1",
4354 doi = "10.1063/1.97667",
4355 notes = "apb 3c-sic heteroepitaxy on si",
4358 @Article{shibahara86,
4359 title = "Surface morphology of cubic Si{C}(100) grown on
4360 Si(100) by chemical vapor deposition",
4361 journal = "Journal of Crystal Growth",
4368 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4369 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4370 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4372 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4375 @Article{desjardins96,
4376 author = "P. Desjardins and J. E. Greene",
4378 title = "Step-flow epitaxial growth on two-domain surfaces",
4381 journal = "Journal of Applied Physics",
4384 pages = "1423--1434",
4385 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4386 FILM GROWTH; SURFACE STRUCTURE",
4387 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4388 doi = "10.1063/1.360980",
4389 notes = "apb model",
4393 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4395 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4396 carbonization of silicon",
4399 journal = "Journal of Applied Physics",
4402 pages = "2070--2073",
4403 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4404 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4406 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4407 doi = "10.1063/1.360184",
4408 notes = "ssmbe of sic on si, lower temperatures",
4412 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4413 {MBE} using surface superstructure",
4414 journal = "Journal of Crystal Growth",
4421 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4422 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4423 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4424 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4425 notes = "gas source mbe of 3c-sic on 6h-sic",
4428 @Article{yoshinobu92,
4429 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4430 and Takashi Fuyuki and Hiroyuki Matsunami",
4432 title = "Lattice-matched epitaxial growth of single crystalline
4433 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4434 molecular beam epitaxy",
4437 journal = "Applied Physics Letters",
4441 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4442 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4443 INTERFACE STRUCTURE",
4444 URL = "http://link.aip.org/link/?APL/60/824/1",
4445 doi = "10.1063/1.107430",
4446 notes = "gas source mbe of 3c-sic on 6h-sic",
4449 @Article{yoshinobu90,
4450 title = "Atomic level control in gas source {MBE} growth of
4452 journal = "Journal of Crystal Growth",
4459 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4460 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4461 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4462 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4463 notes = "gas source mbe of 3c-sic on 3c-sic",
4467 title = "Atomic layer epitaxy controlled by surface
4468 superstructures in Si{C}",
4469 journal = "Thin Solid Films",
4476 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4477 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4478 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4480 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4485 title = "Microscopic mechanisms of accurate layer-by-layer
4486 growth of [beta]-Si{C}",
4487 journal = "Thin Solid Films",
4494 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4495 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4496 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4497 and S. Misawa and E. Sakuma and S. Yoshida",
4498 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4503 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4505 title = "Effects of gas flow ratio on silicon carbide thin film
4506 growth mode and polytype formation during gas-source
4507 molecular beam epitaxy",
4510 journal = "Applied Physics Letters",
4513 pages = "2851--2853",
4514 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4515 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4516 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4518 URL = "http://link.aip.org/link/?APL/65/2851/1",
4519 doi = "10.1063/1.112513",
4520 notes = "gas source mbe of 6h-sic on 6h-sic",
4524 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4525 title = "Heterointerface Control and Epitaxial Growth of
4526 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4527 publisher = "WILEY-VCH Verlag",
4529 journal = "physica status solidi (b)",
4532 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4537 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4538 journal = "Journal of Crystal Growth",
4545 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4546 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4547 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4548 keywords = "Reflection high-energy electron diffraction (RHEED)",
4549 keywords = "Scanning electron microscopy (SEM)",
4550 keywords = "Silicon carbide",
4551 keywords = "Silicon",
4552 keywords = "Island growth",
4553 notes = "lower temperature, 550-700",
4556 @Article{hatayama95,
4557 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4558 on Si using hydrocarbon radicals by gas source
4559 molecular beam epitaxy",
4560 journal = "Journal of Crystal Growth",
4567 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4568 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4569 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4570 and Hiroyuki Matsunami",
4574 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4575 title = "The Preference of Silicon Carbide for Growth in the
4576 Metastable Cubic Form",
4577 journal = "Journal of the American Ceramic Society",
4580 publisher = "Blackwell Publishing Ltd",
4582 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4583 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4584 pages = "2630--2633",
4585 keywords = "silicon carbide, crystal growth, crystal structure,
4586 calculations, stability",
4588 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4589 polytype dft calculation refs",
4592 @Article{allendorf91,
4593 title = "The adsorption of {H}-atoms on polycrystalline
4594 [beta]-silicon carbide",
4595 journal = "Surface Science",
4602 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4603 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4604 author = "Mark D. Allendorf and Duane A. Outka",
4605 notes = "h adsorption on 3c-sic",
4608 @Article{eaglesham93,
4609 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4610 D. P. Adams and S. M. Yalisove",
4612 title = "Effect of {H} on Si molecular-beam epitaxy",
4615 journal = "Journal of Applied Physics",
4618 pages = "6615--6618",
4619 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4620 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4621 DIFFUSION; ADSORPTION",
4622 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4623 doi = "10.1063/1.355101",
4624 notes = "h incorporation on si surface, lower surface
4629 author = "Ronald C. Newman",
4630 title = "Carbon in Crystalline Silicon",
4631 journal = "MRS Online Proceedings Library",
4636 doi = "10.1557/PROC-59-403",
4637 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4638 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4642 title = "The diffusivity of carbon in silicon",
4643 journal = "Journal of Physics and Chemistry of Solids",
4650 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4651 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4652 author = "R. C. Newman and J. Wakefield",
4653 notes = "diffusivity of substitutional c in si",
4657 author = "U. Gösele",
4658 title = "The Role of Carbon and Point Defects in Silicon",
4659 journal = "MRS Online Proceedings Library",
4664 doi = "10.1557/PROC-59-419",
4665 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4666 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4669 @Article{mukashev82,
4670 title = "Defects in Carbon-Implanted Silicon",
4671 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4672 Fukuoka and Haruo Saito",
4673 journal = "Japanese Journal of Applied Physics",
4675 number = "Part 1, No. 2",
4679 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4680 doi = "10.1143/JJAP.21.399",
4681 publisher = "The Japan Society of Applied Physics",
4685 title = "Convergence of supercell calculations for point
4686 defects in semiconductors: Vacancy in silicon",
4687 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4689 journal = "Phys. Rev. B",
4692 pages = "1318--1325",
4696 doi = "10.1103/PhysRevB.58.1318",
4697 publisher = "American Physical Society",
4698 notes = "convergence k point supercell size, vacancy in
4703 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4704 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4705 K{\"{o}}gler and W. Skorupa",
4707 title = "Spectroscopic characterization of phases formed by
4708 high-dose carbon ion implantation in silicon",
4711 journal = "Journal of Applied Physics",
4714 pages = "2978--2984",
4715 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4716 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4717 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4718 DEPENDENCE; PRECIPITATES; ANNEALING",
4719 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4720 doi = "10.1063/1.358714",
4723 @Article{romano-rodriguez96,
4724 title = "Detailed analysis of [beta]-Si{C} formation by high
4725 dose carbon ion implantation in silicon",
4726 journal = "Materials Science and Engineering B",
4731 note = "European Materials Research Society 1995 Spring
4732 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4733 Oxygen in Silicon and in Other Elemental
4736 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4737 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4738 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4739 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4741 keywords = "Silicon",
4742 keywords = "Ion implantation",
4743 notes = "incoherent 3c-sic precipitate",