2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "M. A. Capano and R. J. Trew",
45 title = "Silicon Carbide Electronic Materials and Devices",
46 journal = "MRS Bull.",
53 author = "G. R. Fisher and P. Barnes",
54 title = "Towards a unified view of polytypism in silicon
56 journal = "Philosophical Magazine Part B",
60 notes = "sic polytypes",
64 author = "P. S. de Laplace",
65 title = "Th\'eorie analytique des probabilit\'es",
66 series = "Oeuvres Compl\`etes de Laplace",
68 publisher = "Gauthier-Villars",
73 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
74 title = "{Atomistic modeling of brittleness in covalent
76 journal = "Phys. Rev. B",
82 doi = "10.1103/PhysRevB.76.224103",
83 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
84 longe(r)-range-interactions, brittle propagation of
85 fracture, more available potentials, universal energy
86 relation (uer), minimum range model (mrm)",
90 title = "Stress relaxation in $a-Si$ induced by ion
92 author = "H. M. Urbassek M. Koster",
93 journal = "Phys. Rev. B",
96 pages = "11219--11224",
100 doi = "10.1103/PhysRevB.62.11219",
101 publisher = "American Physical Society",
102 notes = "virial derivation for 3-body tersoff potential",
105 @Article{breadmore99,
106 title = "Direct simulation of ion-beam-induced stressing and
107 amorphization of silicon",
108 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
109 journal = "Phys. Rev. B",
112 pages = "12610--12616",
116 doi = "10.1103/PhysRevB.60.12610",
117 publisher = "American Physical Society",
118 notes = "virial derivation for 3-body tersoff potential",
122 author = "Henri Moissan",
123 title = "Nouvelles recherches sur la météorité de Cañon
125 journal = "Comptes rendus de l'Académie des Sciences",
132 author = "Y. S. Park",
133 title = "Si{C} Materials and Devices",
134 publisher = "Academic Press",
135 address = "San Diego",
140 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
141 Calvin H. Carter Jr. and D. Asbury",
142 title = "Si{C} Seeded Boule Growth",
143 journal = "Materials Science Forum",
147 notes = "modified lely process, micropipes",
151 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
152 Thermodynamical Properties of Lennard-Jones Molecules",
153 author = "Loup Verlet",
154 journal = "Phys. Rev.",
160 doi = "10.1103/PhysRev.159.98",
161 publisher = "American Physical Society",
162 notes = "velocity verlet integration algorithm equation of
166 @Article{berendsen84,
167 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
168 Gunsteren and A. DiNola and J. R. Haak",
170 title = "Molecular dynamics with coupling to an external bath",
173 journal = "The Journal of Chemical Physics",
176 pages = "3684--3690",
177 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
178 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
179 URL = "http://link.aip.org/link/?JCP/81/3684/1",
180 doi = "10.1063/1.448118",
181 notes = "berendsen thermostat barostat",
185 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
187 title = "Molecular dynamics determination of defect energetics
188 in beta -Si{C} using three representative empirical
190 journal = "Modelling and Simulation in Materials Science and
195 URL = "http://stacks.iop.org/0965-0393/3/615",
196 notes = "comparison of tersoff, pearson and eam for defect
197 energetics in sic; (m)eam parameters for sic",
202 title = "Relationship between the embedded-atom method and
204 author = "Donald W. Brenner",
205 journal = "Phys. Rev. Lett.",
212 doi = "10.1103/PhysRevLett.63.1022",
213 publisher = "American Physical Society",
214 notes = "relation of tersoff and eam potential",
218 title = "Molecular-dynamics study of self-interstitials in
220 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
221 journal = "Phys. Rev. B",
224 pages = "9552--9558",
228 doi = "10.1103/PhysRevB.35.9552",
229 publisher = "American Physical Society",
230 notes = "selft-interstitials in silicon, stillinger-weber,
231 calculation of defect formation energy, defect
236 title = "Extended interstitials in silicon and germanium",
237 author = "H. R. Schober",
238 journal = "Phys. Rev. B",
241 pages = "13013--13015",
245 doi = "10.1103/PhysRevB.39.13013",
246 publisher = "American Physical Society",
247 notes = "stillinger-weber silicon 110 stable and metastable
248 dumbbell configuration",
252 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
253 Defect accumulation, topological features, and
255 author = "F. Gao and W. J. Weber",
256 journal = "Phys. Rev. B",
263 doi = "10.1103/PhysRevB.66.024106",
264 publisher = "American Physical Society",
265 notes = "sic intro, si cascade in 3c-sic, amorphization,
266 tersoff modified, pair correlation of amorphous sic, md
270 @Article{devanathan98,
271 title = "Computer simulation of a 10 ke{V} Si displacement
273 journal = "Nuclear Instruments and Methods in Physics Research
274 Section B: Beam Interactions with Materials and Atoms",
280 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
281 author = "R. Devanathan and W. J. Weber and T. Diaz de la
283 notes = "modified tersoff short range potential, ab initio
287 @Article{devanathan98_2,
288 title = "Displacement threshold energies in [beta]-Si{C}",
289 journal = "Journal of Nuclear Materials",
295 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
296 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
298 notes = "modified tersoff, ab initio, combined ab initio
303 title = "Si{C}/Si heteroepitaxial growth",
304 author = "M. Kitabatake",
305 journal = "Thin Solid Films",
310 notes = "md simulation, sic si heteroepitaxy, mbe",
314 title = "Intrinsic point defects in crystalline silicon:
315 Tight-binding molecular dynamics studies of
316 self-diffusion, interstitial-vacancy recombination, and
318 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
320 journal = "Phys. Rev. B",
323 pages = "14279--14289",
327 doi = "10.1103/PhysRevB.55.14279",
328 publisher = "American Physical Society",
329 notes = "si self interstitial, diffusion, tbmd",
333 title = "Tight-binding theory of native point defects in
335 author = "L. Colombo",
336 journal = "Annu. Rev. Mater. Res.",
341 doi = "10.1146/annurev.matsci.32.111601.103036",
342 publisher = "Annual Reviews",
343 notes = "si self interstitial, tbmd, virial stress",
347 title = "Ab initio and empirical-potential studies of defect
348 properties in $3{C}-Si{C}$",
349 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
351 journal = "Phys. Rev. B",
358 doi = "10.1103/PhysRevB.64.245208",
359 publisher = "American Physical Society",
360 notes = "defects in 3c-sic",
363 @Article{mattoni2002,
364 title = "Self-interstitial trapping by carbon complexes in
365 crystalline silicon",
366 author = "A. Mattoni and F. Bernardini and L. Colombo",
367 journal = "Phys. Rev. B",
374 doi = "10.1103/PhysRevB.66.195214",
375 publisher = "American Physical Society",
376 notes = "c in c-si, diffusion, interstitial configuration +
381 title = "Calculations of Silicon Self-Interstitial Defects",
382 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
384 journal = "Phys. Rev. Lett.",
387 pages = "2351--2354",
391 doi = "10.1103/PhysRevLett.83.2351",
392 publisher = "American Physical Society",
393 notes = "nice images of the defects",
397 title = "Identification of the migration path of interstitial
399 author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
400 journal = "Phys. Rev. B",
403 pages = "7439--7442",
407 doi = "10.1103/PhysRevB.50.7439",
408 publisher = "American Physical Society",
409 notes = "carbon interstitial migration path shown, 001 c-si
414 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
416 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
417 Sokrates T. Pantelides",
418 journal = "Phys. Rev. Lett.",
421 pages = "1814--1817",
425 doi = "10.1103/PhysRevLett.52.1814",
426 publisher = "American Physical Society",
427 notes = "microscopic theory diffusion silicon dft migration
432 title = "Short-range order, bulk moduli, and physical trends in
433 c-$Si1-x$$Cx$ alloys",
434 author = "P. C. Kelires",
435 journal = "Phys. Rev. B",
438 pages = "8784--8787",
442 doi = "10.1103/PhysRevB.55.8784",
443 publisher = "American Physical Society",
444 notes = "c strained si, montecarlo md, bulk moduli, next
449 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
450 Application to the $Si1-x-yGexCy$ System",
451 author = "P. C. Kelires",
452 journal = "Phys. Rev. Lett.",
455 pages = "1114--1117",
459 doi = "10.1103/PhysRevLett.75.1114",
460 publisher = "American Physical Society",
461 notes = "mc md, strain compensation in si ge by c insertion",
465 title = "{EPR} Observation of the Isolated Interstitial Carbon
467 author = "G. D. Watkins and K. L. Brower",
468 journal = "Phys. Rev. Lett.",
471 pages = "1329--1332",
475 doi = "10.1103/PhysRevLett.36.1329",
476 publisher = "American Physical Society",
477 notes = "epr observations of 100 interstitial carbon atom in
482 title = "{EPR} identification of the single-acceptor state of
483 interstitial carbon in silicon",
484 author = "G. D. Watkins L. W. Song",
485 journal = "Phys. Rev. B",
488 pages = "5759--5764",
492 doi = "10.1103/PhysRevB.42.5759",
493 publisher = "American Physical Society",
497 title = "Carbon incorporation into Si at high concentrations by
498 ion implantation and solid phase epitaxy",
499 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
500 Picraux and J. K. Watanabe and J. W. Mayer",
501 journal = "J. Appl. Phys.",
506 doi = "10.1063/1.360806",
507 notes = "strained silicon, carbon supersaturation",
510 @Article{laveant2002,
511 title = "Epitaxy of carbon-rich silicon with {MBE}",
512 author = "P. Laveant and G. Gerth and P. Werner and U.
514 journal = "Materials Science and Engineering B",
518 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
519 notes = "low c in si, tensile stress to compensate compressive
520 stress, avoid sic precipitation",
524 author = "P. Werner and S. Eichler and G. Mariani and R.
525 K{\"{o}}gler and W. Skorupa",
526 title = "Investigation of {C}[sub x]Si defects in {C} implanted
527 silicon by transmission electron microscopy",
530 journal = "Applied Physics Letters",
534 keywords = "silicon; ion implantation; carbon; crystal defects;
535 transmission electron microscopy; annealing; positron
536 annihilation; secondary ion mass spectroscopy; buried
537 layers; precipitation",
538 URL = "http://link.aip.org/link/?APL/70/252/1",
539 doi = "10.1063/1.118381",
540 notes = "si-c complexes, agglomerate, sic in si matrix, sic
545 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
546 Picraux and J. K. Watanabe and J. W. Mayer",
548 title = "Precipitation and relaxation in strained Si[sub 1 -
549 y]{C}[sub y]/Si heterostructures",
552 journal = "Journal of Applied Physics",
555 pages = "3656--3668",
556 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
557 URL = "http://link.aip.org/link/?JAP/76/3656/1",
558 doi = "10.1063/1.357429",
559 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
563 title = "Prospects for device implementation of wide band gap
565 author = "J. H. Edgar",
566 journal = "J. Mater. Res.",
571 doi = "10.1557/JMR.1992.0235",
572 notes = "properties wide band gap semiconductor, sic
576 @Article{zirkelbach2007,
577 title = "Monte Carlo simulation study of a selforganisation
578 process leading to ordered precipitate structures",
579 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
581 journal = "Nucl. Instr. and Meth. B",
588 doi = "doi:10.1016/j.nimb.2006.12.118",
589 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
593 @Article{zirkelbach2006,
594 title = "Monte-Carlo simulation study of the self-organization
595 of nanometric amorphous precipitates in regular arrays
596 during ion irradiation",
597 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
599 journal = "Nucl. Instr. and Meth. B",
606 doi = "doi:10.1016/j.nimb.2005.08.162",
607 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
611 @Article{zirkelbach2005,
612 title = "Modelling of a selforganization process leading to
613 periodic arrays of nanometric amorphous precipitates by
615 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
617 journal = "Comp. Mater. Sci.",
624 doi = "doi:10.1016/j.commatsci.2004.12.016",
625 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
630 title = "Controlling the density distribution of Si{C}
631 nanocrystals for the ion beam synthesis of buried Si{C}
633 journal = "Nuclear Instruments and Methods in Physics Research
634 Section B: Beam Interactions with Materials and Atoms",
641 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
642 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
643 author = "J. K. N. Lindner and B. Stritzker",
644 notes = "two-step implantation process",
647 @Article{lindner99_2,
648 title = "Mechanisms in the ion beam synthesis of Si{C} layers
650 journal = "Nuclear Instruments and Methods in Physics Research
651 Section B: Beam Interactions with Materials and Atoms",
658 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
659 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
660 author = "J. K. N. Lindner and B. Stritzker",
664 title = "Ion beam synthesis of buried Si{C} layers in silicon:
665 Basic physical processes",
666 journal = "Nuclear Instruments and Methods in Physics Research
667 Section B: Beam Interactions with Materials and Atoms",
674 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
675 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
676 author = "Jörg K. N. Lindner",
680 title = "High-dose carbon implantations into silicon:
681 fundamental studies for new technological tricks",
682 author = "J. K. N. Lindner",
683 journal = "Appl. Phys. A",
687 doi = "10.1007/s00339-002-2062-8",
688 notes = "ibs, burried sic layers",
692 author = "B. J. Alder and T. E. Wainwright",
693 title = "Phase Transition for a Hard Sphere System",
696 journal = "The Journal of Chemical Physics",
699 pages = "1208--1209",
700 URL = "http://link.aip.org/link/?JCP/27/1208/1",
701 doi = "10.1063/1.1743957",
705 author = "B. J. Alder and T. E. Wainwright",
706 title = "Studies in Molecular Dynamics. {I}. General Method",
709 journal = "The Journal of Chemical Physics",
713 URL = "http://link.aip.org/link/?JCP/31/459/1",
714 doi = "10.1063/1.1730376",
717 @Article{tersoff_si1,
718 title = "New empirical model for the structural properties of
720 author = "J. Tersoff",
721 journal = "Phys. Rev. Lett.",
728 doi = "10.1103/PhysRevLett.56.632",
729 publisher = "American Physical Society",
732 @Article{tersoff_si2,
733 title = "New empirical approach for the structure and energy of
735 author = "J. Tersoff",
736 journal = "Phys. Rev. B",
739 pages = "6991--7000",
743 doi = "10.1103/PhysRevB.37.6991",
744 publisher = "American Physical Society",
747 @Article{tersoff_si3,
748 title = "Empirical interatomic potential for silicon with
749 improved elastic properties",
750 author = "J. Tersoff",
751 journal = "Phys. Rev. B",
754 pages = "9902--9905",
758 doi = "10.1103/PhysRevB.38.9902",
759 publisher = "American Physical Society",
763 title = "Empirical Interatomic Potential for Carbon, with
764 Applications to Amorphous Carbon",
765 author = "J. Tersoff",
766 journal = "Phys. Rev. Lett.",
769 pages = "2879--2882",
773 doi = "10.1103/PhysRevLett.61.2879",
774 publisher = "American Physical Society",
778 title = "Modeling solid-state chemistry: Interatomic potentials
779 for multicomponent systems",
780 author = "J. Tersoff",
781 journal = "Phys. Rev. B",
784 pages = "5566--5568",
788 doi = "10.1103/PhysRevB.39.5566",
789 publisher = "American Physical Society",
793 title = "Point defects and dopant diffusion in silicon",
794 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
795 journal = "Rev. Mod. Phys.",
802 doi = "10.1103/RevModPhys.61.289",
803 publisher = "American Physical Society",
807 title = "Silicon carbide: synthesis and processing",
808 journal = "Nuclear Instruments and Methods in Physics Research
809 Section B: Beam Interactions with Materials and Atoms",
814 note = "Radiation Effects in Insulators",
816 doi = "DOI: 10.1016/0168-583X(96)00065-1",
817 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
822 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
823 Lin and B. Sverdlov and M. Burns",
825 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
826 ZnSe-based semiconductor device technologies",
829 journal = "Journal of Applied Physics",
832 pages = "1363--1398",
833 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
834 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
835 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
837 URL = "http://link.aip.org/link/?JAP/76/1363/1",
838 doi = "10.1063/1.358463",
842 author = "Noch Unbekannt",
843 title = "How to find references",
844 journal = "Journal of Applied References",
851 title = "Atomistic simulation of thermomechanical properties of
853 author = "Meijie Tang and Sidney Yip",
854 journal = "Phys. Rev. B",
857 pages = "15150--15159",
861 doi = "10.1103/PhysRevB.52.15150",
862 notes = "modified tersoff, scale cutoff with volume",
863 publisher = "American Physical Society",
867 title = "Silicon carbide as a new {MEMS} technology",
868 journal = "Sensors and Actuators A: Physical",
874 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
875 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
876 author = "Pasqualina M. Sarro",
878 keywords = "Silicon carbide",
879 keywords = "Micromachining",
880 keywords = "Mechanical stress",
884 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
885 semiconductor for high-temperature applications: {A}
887 journal = "Solid-State Electronics",
890 pages = "1409--1422",
893 doi = "DOI: 10.1016/0038-1101(96)00045-7",
894 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
895 author = "J. B. Casady and R. W. Johnson",
898 @Article{giancarli98,
899 title = "Design requirements for Si{C}/Si{C} composites
900 structural material in fusion power reactor blankets",
901 journal = "Fusion Engineering and Design",
907 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
908 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
909 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
910 Marois and N. B. Morley and J. F. Salavy",
914 title = "Electrical and optical characterization of Si{C}",
915 journal = "Physica B: Condensed Matter",
921 doi = "DOI: 10.1016/0921-4526(93)90249-6",
922 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
923 author = "G. Pensl and W. J. Choyke",
927 title = "Investigation of growth processes of ingots of silicon
928 carbide single crystals",
929 journal = "Journal of Crystal Growth",
934 notes = "modifief lely process",
936 doi = "DOI: 10.1016/0022-0248(78)90169-0",
937 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
938 author = "Yu. M. Tairov and V. F. Tsvetkov",
942 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
944 title = "Growth and Characterization of Cubic Si{C}
945 Single-Crystal Films on Si",
948 journal = "Journal of The Electrochemical Society",
951 pages = "1558--1565",
952 keywords = "semiconductor materials; silicon compounds; carbon
953 compounds; crystal morphology; electron mobility",
954 URL = "http://link.aip.org/link/?JES/134/1558/1",
955 doi = "10.1149/1.2100708",
956 notes = "blue light emitting diodes (led)",
960 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
961 and Hiroyuki Matsunami",
962 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
966 journal = "Journal of Applied Physics",
970 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
971 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
973 URL = "http://link.aip.org/link/?JAP/73/726/1",
974 doi = "10.1063/1.353329",
978 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
979 J. Choyke and J. L. Bradshaw and L. Henderson and M.
980 Yoganathan and J. Yang and P. Pirouz",
982 title = "Growth of improved quality 3{C}-Si{C} films on
983 6{H}-Si{C} substrates",
986 journal = "Applied Physics Letters",
989 pages = "1353--1355",
990 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
991 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
992 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
994 URL = "http://link.aip.org/link/?APL/56/1353/1",
995 doi = "10.1063/1.102512",
999 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1000 [alpha]-Si{C}(0001) at low temperatures by solid-source
1001 molecular beam epitaxy",
1002 journal = "Journal of Crystal Growth",
1007 notes = "solid source mbe",
1009 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1010 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1011 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1016 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1018 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1022 journal = "Applied Physics Letters",
1026 URL = "http://link.aip.org/link/?APL/18/509/1",
1027 notes = "first time sic by ibs",
1028 doi = "10.1063/1.1653516",
1032 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1033 J. Davis and G. E. Celler",
1035 title = "Formation of buried layers of beta-Si{C} using ion
1036 beam synthesis and incoherent lamp annealing",
1039 journal = "Applied Physics Letters",
1042 pages = "2242--2244",
1043 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1044 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1045 URL = "http://link.aip.org/link/?APL/51/2242/1",
1046 doi = "10.1063/1.98953",
1047 notes = "nice tem images, sic by ibs",
1051 author = "R. I. Scace and G. A. Slack",
1053 title = "Solubility of Carbon in Silicon and Germanium",
1056 journal = "The Journal of Chemical Physics",
1059 pages = "1551--1555",
1060 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1061 doi = "10.1063/1.1730236",
1062 notes = "solubility of c in c-si",
1066 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1067 F. W. Saris and W. Vandervorst",
1069 title = "Role of {C} and {B} clusters in transient diffusion of
1073 journal = "Applied Physics Letters",
1076 pages = "1150--1152",
1077 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1078 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1080 URL = "http://link.aip.org/link/?APL/68/1150/1",
1081 doi = "10.1063/1.115706",
1082 notes = "suppression of transient enhanced diffusion (ted)",
1086 title = "Implantation and transient boron diffusion: the role
1087 of the silicon self-interstitial",
1088 journal = "Nuclear Instruments and Methods in Physics Research
1089 Section B: Beam Interactions with Materials and Atoms",
1094 note = "Selected Papers of the Tenth International Conference
1095 on Ion Implantation Technology (IIT '94)",
1097 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1098 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1099 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1104 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1106 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1107 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1110 journal = "Applied Physics Letters",
1114 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1115 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1116 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1118 URL = "http://link.aip.org/link/?APL/64/324/1",
1119 doi = "10.1063/1.111195",
1120 notes = "beta sic nano crystals in si, mbe, annealing",
1124 author = "Richard A. Soref",
1126 title = "Optical band gap of the ternary semiconductor Si[sub 1
1127 - x - y]Ge[sub x]{C}[sub y]",
1130 journal = "Journal of Applied Physics",
1133 pages = "2470--2472",
1134 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1135 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1137 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1138 doi = "10.1063/1.349403",
1139 notes = "band gap of strained si by c",
1143 author = "E Kasper",
1144 title = "Superlattices of group {IV} elements, a new
1145 possibility to produce direct band gap material",
1146 journal = "Physica Scripta",
1149 URL = "http://stacks.iop.org/1402-4896/T35/232",
1151 notes = "superlattices, convert indirect band gap into a
1156 author = "H. J. Osten and J. Griesche and S. Scalese",
1158 title = "Substitutional carbon incorporation in epitaxial
1159 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1160 molecular beam epitaxy",
1163 journal = "Applied Physics Letters",
1167 keywords = "molecular beam epitaxial growth; semiconductor growth;
1168 wide band gap semiconductors; interstitials; silicon
1170 URL = "http://link.aip.org/link/?APL/74/836/1",
1171 doi = "10.1063/1.123384",
1172 notes = "substitutional c in si",
1175 @Article{hohenberg64,
1176 title = "Inhomogeneous Electron Gas",
1177 author = "P. Hohenberg and W. Kohn",
1178 journal = "Phys. Rev.",
1181 pages = "B864--B871",
1185 doi = "10.1103/PhysRev.136.B864",
1186 publisher = "American Physical Society",
1187 notes = "density functional theory, dft",
1191 title = "Self-Consistent Equations Including Exchange and
1192 Correlation Effects",
1193 author = "W. Kohn and L. J. Sham",
1194 journal = "Phys. Rev.",
1197 pages = "A1133--A1138",
1201 doi = "10.1103/PhysRev.140.A1133",
1202 publisher = "American Physical Society",
1203 notes = "dft, exchange and correlation",
1207 title = "Strain-stabilized highly concentrated pseudomorphic
1208 $Si1-x$$Cx$ layers in Si",
1209 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1211 journal = "Phys. Rev. Lett.",
1214 pages = "3578--3581",
1218 doi = "10.1103/PhysRevLett.72.3578",
1219 publisher = "American Physical Society",
1220 notes = "high c concentration in si, heterostructure, starined
1225 title = "Electron Transport Model for Strained Silicon-Carbon
1227 author = "Shu-Tong Chang and Chung-Yi Lin",
1228 journal = "Japanese Journal of Applied Physics",
1231 pages = "2257--2262",
1234 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1235 doi = "10.1143/JJAP.44.2257",
1236 publisher = "The Japan Society of Applied Physics",
1237 notes = "enhance of electron mobility in starined si",
1241 author = "H. J. Osten and P. Gaworzewski",
1243 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1244 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1248 journal = "Journal of Applied Physics",
1251 pages = "4977--4981",
1252 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1253 semiconductors; semiconductor epitaxial layers; carrier
1254 density; Hall mobility; interstitials; defect states",
1255 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1256 doi = "10.1063/1.366364",
1257 notes = "charge transport in strained si",