2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 author = "P. S. de Laplace",
97 title = "Th\'eorie analytique des probabilit\'es",
98 series = "Oeuvres Compl\`etes de Laplace",
100 publisher = "Gauthier-Villars",
104 @Article{mattoni2007,
105 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
106 title = "{Atomistic modeling of brittleness in covalent
108 journal = "Phys. Rev. B",
114 doi = "10.1103/PhysRevB.76.224103",
115 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
116 longe(r)-range-interactions, brittle propagation of
117 fracture, more available potentials, universal energy
118 relation (uer), minimum range model (mrm)",
122 title = "Comparative study of silicon empirical interatomic
124 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
125 journal = "Phys. Rev. B",
128 pages = "2250--2279",
132 doi = "10.1103/PhysRevB.46.2250",
133 publisher = "American Physical Society",
134 notes = "comparison of classical potentials for si",
138 title = "Stress relaxation in $a-Si$ induced by ion
140 author = "H. M. Urbassek M. Koster",
141 journal = "Phys. Rev. B",
144 pages = "11219--11224",
148 doi = "10.1103/PhysRevB.62.11219",
149 publisher = "American Physical Society",
150 notes = "virial derivation for 3-body tersoff potential",
153 @Article{breadmore99,
154 title = "Direct simulation of ion-beam-induced stressing and
155 amorphization of silicon",
156 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
157 journal = "Phys. Rev. B",
160 pages = "12610--12616",
164 doi = "10.1103/PhysRevB.60.12610",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
170 author = "Henri Moissan",
171 title = "Nouvelles recherches sur la météorité de Cañon
173 journal = "Comptes rendus de l'Académie des Sciences",
180 author = "Y. S. Park",
181 title = "Si{C} Materials and Devices",
182 publisher = "Academic Press",
183 address = "San Diego",
188 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
189 Calvin H. Carter Jr. and D. Asbury",
190 title = "Si{C} Seeded Boule Growth",
191 journal = "Materials Science Forum",
195 notes = "modified lely process, micropipes",
199 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
200 Thermodynamical Properties of Lennard-Jones Molecules",
201 author = "Loup Verlet",
202 journal = "Phys. Rev.",
208 doi = "10.1103/PhysRev.159.98",
209 publisher = "American Physical Society",
210 notes = "velocity verlet integration algorithm equation of
214 @Article{berendsen84,
215 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
216 Gunsteren and A. DiNola and J. R. Haak",
218 title = "Molecular dynamics with coupling to an external bath",
221 journal = "J. Chem. Phys.",
224 pages = "3684--3690",
225 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
226 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
227 URL = "http://link.aip.org/link/?JCP/81/3684/1",
228 doi = "10.1063/1.448118",
229 notes = "berendsen thermostat barostat",
233 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
235 title = "Molecular dynamics determination of defect energetics
236 in beta -Si{C} using three representative empirical
238 journal = "Modell. Simul. Mater. Sci. Eng.",
242 URL = "http://stacks.iop.org/0965-0393/3/615",
243 notes = "comparison of tersoff, pearson and eam for defect
244 energetics in sic; (m)eam parameters for sic",
249 title = "Relationship between the embedded-atom method and
251 author = "Donald W. Brenner",
252 journal = "Phys. Rev. Lett.",
259 doi = "10.1103/PhysRevLett.63.1022",
260 publisher = "American Physical Society",
261 notes = "relation of tersoff and eam potential",
265 title = "Molecular-dynamics study of self-interstitials in
267 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
268 journal = "Phys. Rev. B",
271 pages = "9552--9558",
275 doi = "10.1103/PhysRevB.35.9552",
276 publisher = "American Physical Society",
277 notes = "selft-interstitials in silicon, stillinger-weber,
278 calculation of defect formation energy, defect
283 title = "Extended interstitials in silicon and germanium",
284 author = "H. R. Schober",
285 journal = "Phys. Rev. B",
288 pages = "13013--13015",
292 doi = "10.1103/PhysRevB.39.13013",
293 publisher = "American Physical Society",
294 notes = "stillinger-weber silicon 110 stable and metastable
295 dumbbell configuration",
299 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
300 Defect accumulation, topological features, and
302 author = "F. Gao and W. J. Weber",
303 journal = "Phys. Rev. B",
310 doi = "10.1103/PhysRevB.66.024106",
311 publisher = "American Physical Society",
312 notes = "sic intro, si cascade in 3c-sic, amorphization,
313 tersoff modified, pair correlation of amorphous sic, md
317 @Article{devanathan98,
318 title = "Computer simulation of a 10 ke{V} Si displacement
320 journal = "Nucl. Instrum. Methods Phys. Res. B",
326 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
327 author = "R. Devanathan and W. J. Weber and T. Diaz de la
329 notes = "modified tersoff short range potential, ab initio
333 @Article{devanathan98_2,
334 title = "Displacement threshold energies in [beta]-Si{C}",
335 journal = "J. Nucl. Mater.",
341 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
342 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
344 notes = "modified tersoff, ab initio, combined ab initio
348 @Article{kitabatake00,
349 title = "Si{C}/Si heteroepitaxial growth",
350 author = "M. Kitabatake",
351 journal = "Thin Solid Films",
356 notes = "md simulation, sic si heteroepitaxy, mbe",
360 title = "Intrinsic point defects in crystalline silicon:
361 Tight-binding molecular dynamics studies of
362 self-diffusion, interstitial-vacancy recombination, and
364 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
366 journal = "Phys. Rev. B",
369 pages = "14279--14289",
373 doi = "10.1103/PhysRevB.55.14279",
374 publisher = "American Physical Society",
375 notes = "si self interstitial, diffusion, tbmd",
379 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
382 title = "A kinetic Monte--Carlo study of the effective
383 diffusivity of the silicon self-interstitial in the
384 presence of carbon and boron",
387 journal = "J. Appl. Phys.",
390 pages = "1963--1967",
391 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
392 CARBON ADDITIONS; BORON ADDITIONS; elemental
393 semiconductors; self-diffusion",
394 URL = "http://link.aip.org/link/?JAP/84/1963/1",
395 doi = "10.1063/1.368328",
396 notes = "kinetic monte carlo of si self interstitial
401 title = "Barrier to Migration of the Silicon
403 author = "Y. Bar-Yam and J. D. Joannopoulos",
404 journal = "Phys. Rev. Lett.",
407 pages = "1129--1132",
411 doi = "10.1103/PhysRevLett.52.1129",
412 publisher = "American Physical Society",
413 notes = "si self-interstitial migration barrier",
416 @Article{bar-yam84_2,
417 title = "Electronic structure and total-energy migration
418 barriers of silicon self-interstitials",
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. B",
423 pages = "1844--1852",
427 doi = "10.1103/PhysRevB.30.1844",
428 publisher = "American Physical Society",
432 title = "First-principles calculations of self-diffusion
433 constants in silicon",
434 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
435 and D. B. Laks and W. Andreoni and S. T. Pantelides",
436 journal = "Phys. Rev. Lett.",
439 pages = "2435--2438",
443 doi = "10.1103/PhysRevLett.70.2435",
444 publisher = "American Physical Society",
445 notes = "si self int diffusion by ab initio md, formation
446 entropy calculations",
450 title = "Tight-binding theory of native point defects in
452 author = "L. Colombo",
453 journal = "Annu. Rev. Mater. Res.",
458 doi = "10.1146/annurev.matsci.32.111601.103036",
459 publisher = "Annual Reviews",
460 notes = "si self interstitial, tbmd, virial stress",
463 @Article{al-mushadani03,
464 title = "Free-energy calculations of intrinsic point defects in
466 author = "O. K. Al-Mushadani and R. J. Needs",
467 journal = "Phys. Rev. B",
474 doi = "10.1103/PhysRevB.68.235205",
475 publisher = "American Physical Society",
476 notes = "formation energies of intrinisc point defects in
477 silicon, si self interstitials, free energy",
480 @Article{goedecker02,
481 title = "A Fourfold Coordinated Point Defect in Silicon",
482 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
483 journal = "Phys. Rev. Lett.",
490 doi = "10.1103/PhysRevLett.88.235501",
491 publisher = "American Physical Society",
492 notes = "first time ffcd, fourfold coordinated point defect in
497 title = "Ab initio molecular dynamics simulation of
498 self-interstitial diffusion in silicon",
499 author = "Beat Sahli and Wolfgang Fichtner",
500 journal = "Phys. Rev. B",
507 doi = "10.1103/PhysRevB.72.245210",
508 publisher = "American Physical Society",
509 notes = "si self int, diffusion, barrier height, voronoi
514 title = "Ab initio calculations of the interaction between
515 native point defects in silicon",
516 journal = "Mater. Sci. Eng., B",
521 note = "EMRS 2005, Symposium D - Materials Science and Device
522 Issues for Future Technologies",
524 doi = "DOI: 10.1016/j.mseb.2005.08.072",
525 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
526 author = "G. Hobler and G. Kresse",
527 notes = "vasp intrinsic si defect interaction study, capture
532 title = "Ab initio study of self-diffusion in silicon over a
533 wide temperature range: Point defect states and
534 migration mechanisms",
535 author = "Shangyi Ma and Shaoqing Wang",
536 journal = "Phys. Rev. B",
543 doi = "10.1103/PhysRevB.81.193203",
544 publisher = "American Physical Society",
545 notes = "si self interstitial diffusion + refs",
549 title = "Atomistic simulations on the thermal stability of the
550 antisite pair in 3{C}- and 4{H}-Si{C}",
551 author = "M. Posselt and F. Gao and W. J. Weber",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.73.125206",
560 publisher = "American Physical Society",
564 title = "Correlation between self-diffusion in Si and the
565 migration mechanisms of vacancies and
566 self-interstitials: An atomistic study",
567 author = "M. Posselt and F. Gao and H. Bracht",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.78.035208",
576 publisher = "American Physical Society",
577 notes = "si self-interstitial and vacancy diffusion, stillinger
582 title = "Ab initio and empirical-potential studies of defect
583 properties in $3{C}-Si{C}$",
584 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
586 journal = "Phys. Rev. B",
593 doi = "10.1103/PhysRevB.64.245208",
594 publisher = "American Physical Society",
595 notes = "defects in 3c-sic",
599 title = "Empirical potential approach for defect properties in
601 journal = "Nucl. Instrum. Methods Phys. Res. B",
608 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
609 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
610 author = "Fei Gao and William J. Weber",
611 keywords = "Empirical potential",
612 keywords = "Defect properties",
613 keywords = "Silicon carbide",
614 keywords = "Computer simulation",
615 notes = "sic potential, brenner type, like erhart/albe",
619 title = "Atomistic study of intrinsic defect migration in
621 author = "Fei Gao and William J. Weber and M. Posselt and V.
623 journal = "Phys. Rev. B",
630 doi = "10.1103/PhysRevB.69.245205",
631 publisher = "American Physical Society",
632 notes = "defect migration in sic",
636 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
639 title = "Ab Initio atomic simulations of antisite pair recovery
640 in cubic silicon carbide",
643 journal = "Appl. Phys. Lett.",
649 keywords = "ab initio calculations; silicon compounds; antisite
650 defects; wide band gap semiconductors; molecular
651 dynamics method; density functional theory;
652 electron-hole recombination; photoluminescence;
653 impurities; diffusion",
654 URL = "http://link.aip.org/link/?APL/90/221915/1",
655 doi = "10.1063/1.2743751",
658 @Article{mattoni2002,
659 title = "Self-interstitial trapping by carbon complexes in
660 crystalline silicon",
661 author = "A. Mattoni and F. Bernardini and L. Colombo",
662 journal = "Phys. Rev. B",
669 doi = "10.1103/PhysRevB.66.195214",
670 publisher = "American Physical Society",
671 notes = "c in c-si, diffusion, interstitial configuration +
672 links, interaction of carbon and silicon interstitials,
673 tersoff suitability",
677 title = "Calculations of Silicon Self-Interstitial Defects",
678 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
680 journal = "Phys. Rev. Lett.",
683 pages = "2351--2354",
687 doi = "10.1103/PhysRevLett.83.2351",
688 publisher = "American Physical Society",
689 notes = "nice images of the defects, si defect overview +
694 title = "Identification of the migration path of interstitial
696 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
697 journal = "Phys. Rev. B",
700 pages = "7439--7442",
704 doi = "10.1103/PhysRevB.50.7439",
705 publisher = "American Physical Society",
706 notes = "carbon interstitial migration path shown, 001 c-si
711 title = "Theory of carbon-carbon pairs in silicon",
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "9845--9850",
720 doi = "10.1103/PhysRevB.58.9845",
721 publisher = "American Physical Society",
722 notes = "c_i c_s pair configuration, theoretical results",
726 title = "Bistable interstitial-carbon--substitutional-carbon
728 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
730 journal = "Phys. Rev. B",
733 pages = "5765--5783",
737 doi = "10.1103/PhysRevB.42.5765",
738 publisher = "American Physical Society",
739 notes = "c_i c_s pair configuration, experimental results",
743 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
744 Shifeng Lu and Xiang-Yang Liu",
746 title = "Ab initio modeling and experimental study of {C}--{B}
750 journal = "Appl. Phys. Lett.",
754 keywords = "silicon; boron; carbon; elemental semiconductors;
755 impurity-defect interactions; ab initio calculations;
756 secondary ion mass spectra; diffusion; interstitials",
757 URL = "http://link.aip.org/link/?APL/80/52/1",
758 doi = "10.1063/1.1430505",
759 notes = "c-c 100 split, lower as a and b states of capaz",
763 title = "Ab initio investigation of carbon-related defects in
765 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
767 journal = "Phys. Rev. B",
770 pages = "12554--12557",
774 doi = "10.1103/PhysRevB.47.12554",
775 publisher = "American Physical Society",
776 notes = "c interstitials in crystalline silicon",
780 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
782 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
783 Sokrates T. Pantelides",
784 journal = "Phys. Rev. Lett.",
787 pages = "1814--1817",
791 doi = "10.1103/PhysRevLett.52.1814",
792 publisher = "American Physical Society",
793 notes = "microscopic theory diffusion silicon dft migration
798 title = "Unified Approach for Molecular Dynamics and
799 Density-Functional Theory",
800 author = "R. Car and M. Parrinello",
801 journal = "Phys. Rev. Lett.",
804 pages = "2471--2474",
808 doi = "10.1103/PhysRevLett.55.2471",
809 publisher = "American Physical Society",
810 notes = "car parrinello method, dft and md",
814 title = "Short-range order, bulk moduli, and physical trends in
815 c-$Si1-x$$Cx$ alloys",
816 author = "P. C. Kelires",
817 journal = "Phys. Rev. B",
820 pages = "8784--8787",
824 doi = "10.1103/PhysRevB.55.8784",
825 publisher = "American Physical Society",
826 notes = "c strained si, montecarlo md, bulk moduli, next
831 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
832 Application to the $Si1-x-yGexCy$ System",
833 author = "P. C. Kelires",
834 journal = "Phys. Rev. Lett.",
837 pages = "1114--1117",
841 doi = "10.1103/PhysRevLett.75.1114",
842 publisher = "American Physical Society",
843 notes = "mc md, strain compensation in si ge by c insertion",
847 title = "Low temperature electron irradiation of silicon
849 journal = "Solid State Communications",
856 doi = "DOI: 10.1016/0038-1098(70)90074-8",
857 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
858 author = "A. R. Bean and R. C. Newman",
862 title = "{EPR} Observation of the Isolated Interstitial Carbon
864 author = "G. D. Watkins and K. L. Brower",
865 journal = "Phys. Rev. Lett.",
868 pages = "1329--1332",
872 doi = "10.1103/PhysRevLett.36.1329",
873 publisher = "American Physical Society",
874 notes = "epr observations of 100 interstitial carbon atom in
879 title = "{EPR} identification of the single-acceptor state of
880 interstitial carbon in silicon",
881 author = "L. W. Song and G. D. Watkins",
882 journal = "Phys. Rev. B",
885 pages = "5759--5764",
889 doi = "10.1103/PhysRevB.42.5759",
890 publisher = "American Physical Society",
891 notes = "carbon diffusion in silicon",
895 author = "A K Tipping and R C Newman",
896 title = "The diffusion coefficient of interstitial carbon in
898 journal = "Semicond. Sci. Technol.",
902 URL = "http://stacks.iop.org/0268-1242/2/315",
904 notes = "diffusion coefficient of carbon interstitials in
909 title = "Carbon incorporation into Si at high concentrations by
910 ion implantation and solid phase epitaxy",
911 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
912 Picraux and J. K. Watanabe and J. W. Mayer",
913 journal = "J. Appl. Phys.",
918 doi = "10.1063/1.360806",
919 notes = "strained silicon, carbon supersaturation",
922 @Article{laveant2002,
923 title = "Epitaxy of carbon-rich silicon with {MBE}",
924 journal = "Mater. Sci. Eng., B",
930 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
931 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
932 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
934 notes = "low c in si, tensile stress to compensate compressive
935 stress, avoid sic precipitation",
939 author = "P. Werner and S. Eichler and G. Mariani and R.
940 K{\"{o}}gler and W. Skorupa",
941 title = "Investigation of {C}[sub x]Si defects in {C} implanted
942 silicon by transmission electron microscopy",
945 journal = "Appl. Phys. Lett.",
949 keywords = "silicon; ion implantation; carbon; crystal defects;
950 transmission electron microscopy; annealing; positron
951 annihilation; secondary ion mass spectroscopy; buried
952 layers; precipitation",
953 URL = "http://link.aip.org/link/?APL/70/252/1",
954 doi = "10.1063/1.118381",
955 notes = "si-c complexes, agglomerate, sic in si matrix, sic
959 @InProceedings{werner96,
960 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
962 booktitle = "Ion Implantation Technology. Proceedings of the 11th
963 International Conference on",
964 title = "{TEM} investigation of {C}-Si defects in carbon
971 doi = "10.1109/IIT.1996.586497",
973 notes = "c-si agglomerates dumbbells",
977 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
980 title = "Carbon diffusion in silicon",
983 journal = "Appl. Phys. Lett.",
986 pages = "2465--2467",
987 keywords = "silicon; carbon; elemental semiconductors; diffusion;
988 secondary ion mass spectra; semiconductor epitaxial
989 layers; annealing; impurity-defect interactions;
990 impurity distribution",
991 URL = "http://link.aip.org/link/?APL/73/2465/1",
992 doi = "10.1063/1.122483",
993 notes = "c diffusion in si, kick out mechnism",
997 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
998 Picraux and J. K. Watanabe and J. W. Mayer",
1000 title = "Precipitation and relaxation in strained Si[sub 1 -
1001 y]{C}[sub y]/Si heterostructures",
1004 journal = "J. Appl. Phys.",
1007 pages = "3656--3668",
1008 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1009 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1010 doi = "10.1063/1.357429",
1011 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1012 precipitation by substitutional carbon, coherent prec,
1013 coherent to incoherent transition strain vs interface
1018 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1021 title = "Investigation of the high temperature behavior of
1022 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1025 journal = "J. Appl. Phys.",
1028 pages = "1934--1937",
1029 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1030 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1031 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1032 TEMPERATURE RANGE 04001000 K",
1033 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1034 doi = "10.1063/1.358826",
1038 title = "Prospects for device implementation of wide band gap
1040 author = "J. H. Edgar",
1041 journal = "J. Mater. Res.",
1046 doi = "10.1557/JMR.1992.0235",
1047 notes = "properties wide band gap semiconductor, sic
1051 @Article{zirkelbach2007,
1052 title = "Monte Carlo simulation study of a selforganisation
1053 process leading to ordered precipitate structures",
1054 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1056 journal = "Nucl. Instr. and Meth. B",
1063 doi = "doi:10.1016/j.nimb.2006.12.118",
1064 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1068 @Article{zirkelbach2006,
1069 title = "Monte-Carlo simulation study of the self-organization
1070 of nanometric amorphous precipitates in regular arrays
1071 during ion irradiation",
1072 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1074 journal = "Nucl. Instr. and Meth. B",
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1113 Silicon Materials Research for Electronic and
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1165 nanocrystals for the ion beam synthesis of buried Si{C}
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1211 title = "High-dose carbon implantations into silicon:
1212 fundamental studies for new technological tricks",
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1214 journal = "Appl. Phys. A",
1218 doi = "10.1007/s00339-002-2062-8",
1219 notes = "ibs, burried sic layers",
1223 title = "On the balance between ion beam induced nanoparticle
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1226 journal = "Mater. Sci. Eng., C",
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1256 notes = "gan on 3c-sic",
1260 author = "B. J. Alder and T. E. Wainwright",
1261 title = "Phase Transition for a Hard Sphere System",
1264 journal = "J. Chem. Phys.",
1267 pages = "1208--1209",
1268 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1269 doi = "10.1063/1.1743957",
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1277 journal = "J. Chem. Phys.",
1281 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1288 author = "J. Tersoff",
1289 journal = "Phys. Rev. Lett.",
1296 doi = "10.1103/PhysRevLett.56.632",
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1311 doi = "10.1103/PhysRevB.37.6991",
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1318 author = "J. Tersoff",
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1322 pages = "9902--9905",
1326 doi = "10.1103/PhysRevB.38.9902",
1327 publisher = "American Physical Society",
1331 title = "Empirical Interatomic Potential for Carbon, with
1332 Applications to Amorphous Carbon",
1333 author = "J. Tersoff",
1334 journal = "Phys. Rev. Lett.",
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1341 doi = "10.1103/PhysRevLett.61.2879",
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1349 journal = "Phys. Rev. B",
1352 pages = "5566--5568",
1356 doi = "10.1103/PhysRevB.39.5566",
1357 publisher = "American Physical Society",
1361 title = "Carbon defects and defect reactions in silicon",
1362 author = "J. Tersoff",
1363 journal = "Phys. Rev. Lett.",
1366 pages = "1757--1760",
1370 doi = "10.1103/PhysRevLett.64.1757",
1371 publisher = "American Physical Society",
1375 title = "Point defects and dopant diffusion in silicon",
1376 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1377 journal = "Rev. Mod. Phys.",
1384 doi = "10.1103/RevModPhys.61.289",
1385 publisher = "American Physical Society",
1389 title = "Silicon carbide: synthesis and processing",
1390 journal = "Nucl. Instrum. Methods Phys. Res. B",
1395 note = "Radiation Effects in Insulators",
1397 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1398 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
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1403 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1404 Lin and B. Sverdlov and M. Burns",
1406 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1407 ZnSe-based semiconductor device technologies",
1410 journal = "J. Appl. Phys.",
1413 pages = "1363--1398",
1414 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1415 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1418 URL = "http://link.aip.org/link/?JAP/76/1363/1",
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1420 notes = "sic intro, properties",
1424 author = "P. G. Neudeck",
1425 title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
1426 {ELECTRONICS} {TECHNOLOGY}",
1427 journal = "Journal of Electronic Materials",
1436 author = "Noch Unbekannt",
1437 title = "How to find references",
1438 journal = "Journal of Applied References",
1445 title = "Atomistic simulation of thermomechanical properties of
1447 author = "Meijie Tang and Sidney Yip",
1448 journal = "Phys. Rev. B",
1451 pages = "15150--15159",
1454 doi = "10.1103/PhysRevB.52.15150",
1455 notes = "modified tersoff, scale cutoff with volume, promising
1456 tersoff reparametrization",
1457 publisher = "American Physical Society",
1461 title = "Silicon carbide as a new {MEMS} technology",
1462 journal = "Sensors and Actuators A: Physical",
1468 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1469 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1470 author = "Pasqualina M. Sarro",
1472 keywords = "Silicon carbide",
1473 keywords = "Micromachining",
1474 keywords = "Mechanical stress",
1478 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1479 semiconductor for high-temperature applications: {A}
1481 journal = "Solid-State Electronics",
1484 pages = "1409--1422",
1487 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1488 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1489 author = "J. B. Casady and R. W. Johnson",
1490 notes = "sic intro",
1493 @Article{giancarli98,
1494 title = "Design requirements for Si{C}/Si{C} composites
1495 structural material in fusion power reactor blankets",
1496 journal = "Fusion Engineering and Design",
1502 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1503 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1504 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1505 Marois and N. B. Morley and J. F. Salavy",
1509 title = "Electrical and optical characterization of Si{C}",
1510 journal = "Physica B: Condensed Matter",
1516 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1517 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1518 author = "G. Pensl and W. J. Choyke",
1522 title = "Investigation of growth processes of ingots of silicon
1523 carbide single crystals",
1524 journal = "J. Cryst. Growth",
1529 notes = "modified lely process",
1531 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1532 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1533 author = "Yu. M. Tairov and V. F. Tsvetkov",
1537 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1540 title = "Production of large-area single-crystal wafers of
1541 cubic Si{C} for semiconductor devices",
1544 journal = "Appl. Phys. Lett.",
1548 keywords = "silicon carbides; layers; chemical vapor deposition;
1550 URL = "http://link.aip.org/link/?APL/42/460/1",
1551 doi = "10.1063/1.93970",
1552 notes = "cvd of 3c-sic on si, sic buffer layer",
1556 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1557 and Hiroyuki Matsunami",
1559 title = "Epitaxial growth and electric characteristics of cubic
1563 journal = "J. Appl. Phys.",
1566 pages = "4889--4893",
1567 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1568 doi = "10.1063/1.338355",
1569 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1574 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1576 title = "Growth and Characterization of Cubic Si{C}
1577 Single-Crystal Films on Si",
1580 journal = "Journal of The Electrochemical Society",
1583 pages = "1558--1565",
1584 keywords = "semiconductor materials; silicon compounds; carbon
1585 compounds; crystal morphology; electron mobility",
1586 URL = "http://link.aip.org/link/?JES/134/1558/1",
1587 doi = "10.1149/1.2100708",
1588 notes = "blue light emitting diodes (led)",
1592 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1593 and Hiroyuki Matsunami",
1594 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1598 journal = "J. Appl. Phys.",
1602 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1603 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1605 URL = "http://link.aip.org/link/?JAP/73/726/1",
1606 doi = "10.1063/1.353329",
1607 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1611 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1612 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1613 Yoganathan and J. Yang and P. Pirouz",
1615 title = "Growth of improved quality 3{C}-Si{C} films on
1616 6{H}-Si{C} substrates",
1619 journal = "Appl. Phys. Lett.",
1622 pages = "1353--1355",
1623 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1624 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1625 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1627 URL = "http://link.aip.org/link/?APL/56/1353/1",
1628 doi = "10.1063/1.102512",
1629 notes = "cvd of 3c-sic on 6h-sic",
1633 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1634 Thokala and M. J. Loboda",
1636 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1637 films on 6{H}-Si{C} by chemical vapor deposition from
1641 journal = "J. Appl. Phys.",
1644 pages = "1271--1273",
1645 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1646 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1648 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1649 doi = "10.1063/1.360368",
1650 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1654 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1655 [alpha]-Si{C}(0001) at low temperatures by solid-source
1656 molecular beam epitaxy",
1657 journal = "J. Cryst. Growth",
1663 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1664 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1665 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1666 Schr{\"{o}}ter and W. Richter",
1667 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1670 @Article{fissel95_apl,
1671 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1673 title = "Low-temperature growth of Si{C} thin films on Si and
1674 6{H}--Si{C} by solid-source molecular beam epitaxy",
1677 journal = "Appl. Phys. Lett.",
1680 pages = "3182--3184",
1681 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1683 URL = "http://link.aip.org/link/?APL/66/3182/1",
1684 doi = "10.1063/1.113716",
1685 notes = "mbe 3c-sic on si and 6h-sic",
1689 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1691 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1695 journal = "Appl. Phys. Lett.",
1699 URL = "http://link.aip.org/link/?APL/18/509/1",
1700 doi = "10.1063/1.1653516",
1701 notes = "first time sic by ibs, follow cites for precipitation
1706 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1707 J. Davis and G. E. Celler",
1709 title = "Formation of buried layers of beta-Si{C} using ion
1710 beam synthesis and incoherent lamp annealing",
1713 journal = "Appl. Phys. Lett.",
1716 pages = "2242--2244",
1717 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1718 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1719 URL = "http://link.aip.org/link/?APL/51/2242/1",
1720 doi = "10.1063/1.98953",
1721 notes = "nice tem images, sic by ibs",
1725 author = "R. I. Scace and G. A. Slack",
1727 title = "Solubility of Carbon in Silicon and Germanium",
1730 journal = "J. Chem. Phys.",
1733 pages = "1551--1555",
1734 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1735 doi = "10.1063/1.1730236",
1736 notes = "solubility of c in c-si, si-c phase diagram",
1740 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1741 F. W. Saris and W. Vandervorst",
1743 title = "Role of {C} and {B} clusters in transient diffusion of
1747 journal = "Appl. Phys. Lett.",
1750 pages = "1150--1152",
1751 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1752 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1754 URL = "http://link.aip.org/link/?APL/68/1150/1",
1755 doi = "10.1063/1.115706",
1756 notes = "suppression of transient enhanced diffusion (ted)",
1760 title = "Implantation and transient boron diffusion: the role
1761 of the silicon self-interstitial",
1762 journal = "Nucl. Instrum. Methods Phys. Res. B",
1767 note = "Selected Papers of the Tenth International Conference
1768 on Ion Implantation Technology (IIT '94)",
1770 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1771 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1772 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1777 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1778 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1779 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1782 title = "Physical mechanisms of transient enhanced dopant
1783 diffusion in ion-implanted silicon",
1786 journal = "J. Appl. Phys.",
1789 pages = "6031--6050",
1790 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1791 doi = "10.1063/1.364452",
1792 notes = "ted, transient enhanced diffusion, c silicon trap",
1796 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1798 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1799 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1802 journal = "Appl. Phys. Lett.",
1806 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1807 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1808 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1810 URL = "http://link.aip.org/link/?APL/64/324/1",
1811 doi = "10.1063/1.111195",
1812 notes = "beta sic nano crystals in si, mbe, annealing",
1816 author = "Richard A. Soref",
1818 title = "Optical band gap of the ternary semiconductor Si[sub 1
1819 - x - y]Ge[sub x]{C}[sub y]",
1822 journal = "J. Appl. Phys.",
1825 pages = "2470--2472",
1826 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1827 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1829 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1830 doi = "10.1063/1.349403",
1831 notes = "band gap of strained si by c",
1835 author = "E Kasper",
1836 title = "Superlattices of group {IV} elements, a new
1837 possibility to produce direct band gap material",
1838 journal = "Physica Scripta",
1841 URL = "http://stacks.iop.org/1402-4896/T35/232",
1843 notes = "superlattices, convert indirect band gap into a
1848 author = "H. J. Osten and J. Griesche and S. Scalese",
1850 title = "Substitutional carbon incorporation in epitaxial
1851 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1852 molecular beam epitaxy",
1855 journal = "Appl. Phys. Lett.",
1859 keywords = "molecular beam epitaxial growth; semiconductor growth;
1860 wide band gap semiconductors; interstitials; silicon
1862 URL = "http://link.aip.org/link/?APL/74/836/1",
1863 doi = "10.1063/1.123384",
1864 notes = "substitutional c in si",
1867 @Article{hohenberg64,
1868 title = "Inhomogeneous Electron Gas",
1869 author = "P. Hohenberg and W. Kohn",
1870 journal = "Phys. Rev.",
1873 pages = "B864--B871",
1877 doi = "10.1103/PhysRev.136.B864",
1878 publisher = "American Physical Society",
1879 notes = "density functional theory, dft",
1883 title = "Self-Consistent Equations Including Exchange and
1884 Correlation Effects",
1885 author = "W. Kohn and L. J. Sham",
1886 journal = "Phys. Rev.",
1889 pages = "A1133--A1138",
1893 doi = "10.1103/PhysRev.140.A1133",
1894 publisher = "American Physical Society",
1895 notes = "dft, exchange and correlation",
1899 title = "Strain-stabilized highly concentrated pseudomorphic
1900 $Si1-x$$Cx$ layers in Si",
1901 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1903 journal = "Phys. Rev. Lett.",
1906 pages = "3578--3581",
1910 doi = "10.1103/PhysRevLett.72.3578",
1911 publisher = "American Physical Society",
1912 notes = "high c concentration in si, heterostructure, starined
1917 title = "Electron Transport Model for Strained Silicon-Carbon
1919 author = "Shu-Tong Chang and Chung-Yi Lin",
1920 journal = "Japanese J. Appl. Phys.",
1923 pages = "2257--2262",
1926 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1927 doi = "10.1143/JJAP.44.2257",
1928 publisher = "The Japan Society of Applied Physics",
1929 notes = "enhance of electron mobility in starined si",
1933 author = "H. J. Osten and P. Gaworzewski",
1935 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1936 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1940 journal = "J. Appl. Phys.",
1943 pages = "4977--4981",
1944 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1945 semiconductors; semiconductor epitaxial layers; carrier
1946 density; Hall mobility; interstitials; defect states",
1947 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1948 doi = "10.1063/1.366364",
1949 notes = "charge transport in strained si",
1953 title = "Carbon-mediated aggregation of self-interstitials in
1954 silicon: {A} large-scale molecular dynamics study",
1955 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1956 journal = "Phys. Rev. B",
1963 doi = "10.1103/PhysRevB.69.155214",
1964 publisher = "American Physical Society",
1965 notes = "simulation using promising tersoff reparametrization",
1969 title = "Event-Based Relaxation of Continuous Disordered
1971 author = "G. T. Barkema and Normand Mousseau",
1972 journal = "Phys. Rev. Lett.",
1975 pages = "4358--4361",
1979 doi = "10.1103/PhysRevLett.77.4358",
1980 publisher = "American Physical Society",
1981 notes = "activation relaxation technique, art, speed up slow
1986 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1987 Minoukadeh and F. Willaime",
1989 title = "Some improvements of the activation-relaxation
1990 technique method for finding transition pathways on
1991 potential energy surfaces",
1994 journal = "J. Chem. Phys.",
2000 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2001 surfaces; vacancies (crystal)",
2002 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2003 doi = "10.1063/1.3088532",
2004 notes = "improvements to art, refs for methods to find
2005 transition pathways",
2008 @Article{parrinello81,
2009 author = "M. Parrinello and A. Rahman",
2011 title = "Polymorphic transitions in single crystals: {A} new
2012 molecular dynamics method",
2015 journal = "J. Appl. Phys.",
2018 pages = "7182--7190",
2019 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2020 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2021 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2022 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2023 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2025 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2026 doi = "10.1063/1.328693",
2029 @Article{stillinger85,
2030 title = "Computer simulation of local order in condensed phases
2032 author = "Frank H. Stillinger and Thomas A. Weber",
2033 journal = "Phys. Rev. B",
2036 pages = "5262--5271",
2040 doi = "10.1103/PhysRevB.31.5262",
2041 publisher = "American Physical Society",
2045 title = "Empirical potential for hydrocarbons for use in
2046 simulating the chemical vapor deposition of diamond
2048 author = "Donald W. Brenner",
2049 journal = "Phys. Rev. B",
2052 pages = "9458--9471",
2056 doi = "10.1103/PhysRevB.42.9458",
2057 publisher = "American Physical Society",
2058 notes = "brenner hydro carbons",
2062 title = "Modeling of Covalent Bonding in Solids by Inversion of
2063 Cohesive Energy Curves",
2064 author = "Martin Z. Bazant and Efthimios Kaxiras",
2065 journal = "Phys. Rev. Lett.",
2068 pages = "4370--4373",
2072 doi = "10.1103/PhysRevLett.77.4370",
2073 publisher = "American Physical Society",
2074 notes = "first si edip",
2078 title = "Environment-dependent interatomic potential for bulk
2080 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2082 journal = "Phys. Rev. B",
2085 pages = "8542--8552",
2089 doi = "10.1103/PhysRevB.56.8542",
2090 publisher = "American Physical Society",
2091 notes = "second si edip",
2095 title = "Interatomic potential for silicon defects and
2097 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2098 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2099 journal = "Phys. Rev. B",
2102 pages = "2539--2550",
2106 doi = "10.1103/PhysRevB.58.2539",
2107 publisher = "American Physical Society",
2108 notes = "latest si edip, good dislocation explanation",
2112 title = "{PARCAS} molecular dynamics code",
2113 author = "K. Nordlund",
2118 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2120 author = "Arthur F. Voter",
2121 journal = "Phys. Rev. Lett.",
2124 pages = "3908--3911",
2128 doi = "10.1103/PhysRevLett.78.3908",
2129 publisher = "American Physical Society",
2130 notes = "hyperdynamics, accelerated md",
2134 author = "Arthur F. Voter",
2136 title = "A method for accelerating the molecular dynamics
2137 simulation of infrequent events",
2140 journal = "J. Chem. Phys.",
2143 pages = "4665--4677",
2144 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2145 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2146 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2147 energy functions; surface diffusion; reaction kinetics
2148 theory; potential energy surfaces",
2149 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2150 doi = "10.1063/1.473503",
2151 notes = "improved hyperdynamics md",
2154 @Article{sorensen2000,
2155 author = "Mads R. S\o rensen and Arthur F. Voter",
2157 title = "Temperature-accelerated dynamics for simulation of
2161 journal = "J. Chem. Phys.",
2164 pages = "9599--9606",
2165 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2166 MOLECULAR DYNAMICS METHOD; surface diffusion",
2167 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2168 doi = "10.1063/1.481576",
2169 notes = "temperature accelerated dynamics, tad",
2173 title = "Parallel replica method for dynamics of infrequent
2175 author = "Arthur F. Voter",
2176 journal = "Phys. Rev. B",
2179 pages = "R13985--R13988",
2183 doi = "10.1103/PhysRevB.57.R13985",
2184 publisher = "American Physical Society",
2185 notes = "parallel replica method, accelerated md",
2189 author = "Xiongwu Wu and Shaomeng Wang",
2191 title = "Enhancing systematic motion in molecular dynamics
2195 journal = "J. Chem. Phys.",
2198 pages = "9401--9410",
2199 keywords = "molecular dynamics method; argon; Lennard-Jones
2200 potential; crystallisation; liquid theory",
2201 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2202 doi = "10.1063/1.478948",
2203 notes = "self guided md, sgmd, accelerated md, enhancing
2207 @Article{choudhary05,
2208 author = "Devashish Choudhary and Paulette Clancy",
2210 title = "Application of accelerated molecular dynamics schemes
2211 to the production of amorphous silicon",
2214 journal = "J. Chem. Phys.",
2220 keywords = "molecular dynamics method; silicon; glass structure;
2221 amorphous semiconductors",
2222 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2223 doi = "10.1063/1.1878733",
2224 notes = "explanation of sgmd and hyper md, applied to amorphous
2229 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2231 title = "Carbon precipitation in silicon: Why is it so
2235 journal = "Appl. Phys. Lett.",
2238 pages = "3336--3338",
2239 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2240 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2242 URL = "http://link.aip.org/link/?APL/62/3336/1",
2243 doi = "10.1063/1.109063",
2244 notes = "interfacial energy of cubic sic and si",
2247 @Article{chaussende08,
2248 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2249 journal = "J. Cryst. Growth",
2254 note = "Proceedings of the E-MRS Conference, Symposium G -
2255 Substrates of Wide Bandgap Materials",
2257 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2258 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2259 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2260 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2261 and A. Andreadou and E. K. Polychroniadis and C.
2262 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2263 notes = "3c-sic crystal growth, sic fabrication + links,
2268 title = "Forces in Molecules",
2269 author = "R. P. Feynman",
2270 journal = "Phys. Rev.",
2277 doi = "10.1103/PhysRev.56.340",
2278 publisher = "American Physical Society",
2279 notes = "hellmann feynman forces",
2283 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2284 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2285 their Contrasting Properties",
2286 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2288 journal = "Phys. Rev. Lett.",
2295 doi = "10.1103/PhysRevLett.84.943",
2296 publisher = "American Physical Society",
2297 notes = "si sio2 and sic sio2 interface",
2300 @Article{djurabekova08,
2301 title = "Atomistic simulation of the interface structure of Si
2302 nanocrystals embedded in amorphous silica",
2303 author = "Flyura Djurabekova and Kai Nordlund",
2304 journal = "Phys. Rev. B",
2311 doi = "10.1103/PhysRevB.77.115325",
2312 publisher = "American Physical Society",
2313 notes = "nc-si in sio2, interface energy, nc construction,
2314 angular distribution, coordination",
2318 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2319 W. Liang and J. Zou",
2321 title = "Nature of interfacial defects and their roles in
2322 strain relaxation at highly lattice mismatched
2323 3{C}-Si{C}/Si (001) interface",
2326 journal = "J. Appl. Phys.",
2332 keywords = "anelastic relaxation; crystal structure; dislocations;
2333 elemental semiconductors; semiconductor growth;
2334 semiconductor thin films; silicon; silicon compounds;
2335 stacking faults; wide band gap semiconductors",
2336 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2337 doi = "10.1063/1.3234380",
2338 notes = "sic/si interface, follow refs, tem image
2339 deconvolution, dislocation defects",
2342 @Article{kitabatake93,
2343 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2346 title = "Simulations and experiments of Si{C} heteroepitaxial
2347 growth on Si(001) surface",
2350 journal = "J. Appl. Phys.",
2353 pages = "4438--4445",
2354 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2355 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2356 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2357 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2358 doi = "10.1063/1.354385",
2359 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2364 title = "Strain relaxation and thermal stability of the
2365 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2367 journal = "Thin Solid Films",
2374 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2375 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2376 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2377 keywords = "Strain relaxation",
2378 keywords = "Interfaces",
2379 keywords = "Thermal stability",
2380 keywords = "Molecular dynamics",
2381 notes = "tersoff sic/si interface study",
2385 title = "Ab initio Study of Misfit Dislocations at the
2386 $Si{C}/Si(001)$ Interface",
2387 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2389 journal = "Phys. Rev. Lett.",
2396 doi = "10.1103/PhysRevLett.89.156101",
2397 publisher = "American Physical Society",
2398 notes = "sic/si interface study",
2401 @Article{pizzagalli03,
2402 title = "Theoretical investigations of a highly mismatched
2403 interface: Si{C}/Si(001)",
2404 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2406 journal = "Phys. Rev. B",
2413 doi = "10.1103/PhysRevB.68.195302",
2414 publisher = "American Physical Society",
2415 notes = "tersoff md and ab initio sic/si interface study",
2419 title = "Atomic configurations of dislocation core and twin
2420 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2421 electron microscopy",
2422 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2423 H. Zheng and J. W. Liang",
2424 journal = "Phys. Rev. B",
2431 doi = "10.1103/PhysRevB.75.184103",
2432 publisher = "American Physical Society",
2433 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2437 @Article{hornstra58,
2438 title = "Dislocations in the diamond lattice",
2439 journal = "Journal of Physics and Chemistry of Solids",
2446 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2447 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2448 author = "J. Hornstra",
2449 notes = "dislocations in diamond lattice",
2452 @Article{eichhorn99,
2453 author = "F. Eichhorn and N. Schell and W. Matz and R.
2456 title = "Strain and Si{C} particle formation in silicon
2457 implanted with carbon ions of medium fluence studied by
2458 synchrotron x-ray diffraction",
2461 journal = "J. Appl. Phys.",
2464 pages = "4184--4187",
2465 keywords = "silicon; carbon; elemental semiconductors; chemical
2466 interdiffusion; ion implantation; X-ray diffraction;
2467 precipitation; semiconductor doping",
2468 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2469 doi = "10.1063/1.371344",
2470 notes = "sic conversion by ibs, detected substitutional carbon,
2471 expansion of si lattice",
2474 @Article{eichhorn02,
2475 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2476 Metzger and W. Matz and R. K{\"{o}}gler",
2478 title = "Structural relation between Si and Si{C} formed by
2479 carbon ion implantation",
2482 journal = "J. Appl. Phys.",
2485 pages = "1287--1292",
2486 keywords = "silicon compounds; wide band gap semiconductors; ion
2487 implantation; annealing; X-ray scattering; transmission
2488 electron microscopy",
2489 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2490 doi = "10.1063/1.1428105",
2491 notes = "3c-sic alignement to si host in ibs depending on
2492 temperature, might explain c int to c sub trafo",
2496 author = "G Lucas and M Bertolus and L Pizzagalli",
2497 title = "An environment-dependent interatomic potential for
2498 silicon carbide: calculation of bulk properties,
2499 high-pressure phases, point and extended defects, and
2500 amorphous structures",
2501 journal = "J. Phys.: Condens. Matter",
2505 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2511 author = "J Godet and L Pizzagalli and S Brochard and P
2513 title = "Comparison between classical potentials and ab initio
2514 methods for silicon under large shear",
2515 journal = "J. Phys.: Condens. Matter",
2519 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2521 notes = "comparison of empirical potentials, stillinger weber,
2522 edip, tersoff, ab initio",
2525 @Article{moriguchi98,
2526 title = "Verification of Tersoff's Potential for Static
2527 Structural Analysis of Solids of Group-{IV} Elements",
2528 author = "Koji Moriguchi and Akira Shintani",
2529 journal = "Japanese J. Appl. Phys.",
2531 number = "Part 1, No. 2",
2535 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2536 doi = "10.1143/JJAP.37.414",
2537 publisher = "The Japan Society of Applied Physics",
2538 notes = "tersoff stringent test",
2541 @Article{mazzarolo01,
2542 title = "Low-energy recoils in crystalline silicon: Quantum
2544 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2545 Lulli and Eros Albertazzi",
2546 journal = "Phys. Rev. B",
2553 doi = "10.1103/PhysRevB.63.195207",
2554 publisher = "American Physical Society",
2557 @Article{holmstroem08,
2558 title = "Threshold defect production in silicon determined by
2559 density functional theory molecular dynamics
2561 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2562 journal = "Phys. Rev. B",
2569 doi = "10.1103/PhysRevB.78.045202",
2570 publisher = "American Physical Society",
2571 notes = "threshold displacement comparison empirical and ab
2575 @Article{nordlund97,
2576 title = "Repulsive interatomic potentials calculated using
2577 Hartree-Fock and density-functional theory methods",
2578 journal = "Nucl. Instrum. Methods Phys. Res. B",
2585 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2586 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2587 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2588 notes = "repulsive ab initio potential",
2592 title = "Efficiency of ab-initio total energy calculations for
2593 metals and semiconductors using a plane-wave basis
2595 journal = "Comput. Mater. Sci.",
2602 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2603 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2604 author = "G. Kresse and J. Furthm{\"{u}}ller",
2609 title = "Projector augmented-wave method",
2610 author = "P. E. Bl{\"o}chl",
2611 journal = "Phys. Rev. B",
2614 pages = "17953--17979",
2618 doi = "10.1103/PhysRevB.50.17953",
2619 publisher = "American Physical Society",
2620 notes = "paw method",
2624 title = "Norm-Conserving Pseudopotentials",
2625 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2626 journal = "Phys. Rev. Lett.",
2629 pages = "1494--1497",
2633 doi = "10.1103/PhysRevLett.43.1494",
2634 publisher = "American Physical Society",
2635 notes = "norm-conserving pseudopotentials",
2638 @Article{vanderbilt90,
2639 title = "Soft self-consistent pseudopotentials in a generalized
2640 eigenvalue formalism",
2641 author = "David Vanderbilt",
2642 journal = "Phys. Rev. B",
2645 pages = "7892--7895",
2649 doi = "10.1103/PhysRevB.41.7892",
2650 publisher = "American Physical Society",
2651 notes = "vasp pseudopotentials",
2655 title = "Accurate and simple density functional for the
2656 electronic exchange energy: Generalized gradient
2658 author = "John P. Perdew and Yue Wang",
2659 journal = "Phys. Rev. B",
2662 pages = "8800--8802",
2666 doi = "10.1103/PhysRevB.33.8800",
2667 publisher = "American Physical Society",
2668 notes = "rapid communication gga",
2672 title = "Generalized gradient approximations for exchange and
2673 correlation: {A} look backward and forward",
2674 journal = "Physica B: Condensed Matter",
2681 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2682 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2683 author = "John P. Perdew",
2684 notes = "gga overview",
2688 title = "Atoms, molecules, solids, and surfaces: Applications
2689 of the generalized gradient approximation for exchange
2691 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2692 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2693 and Carlos Fiolhais",
2694 journal = "Phys. Rev. B",
2697 pages = "6671--6687",
2701 doi = "10.1103/PhysRevB.46.6671",
2702 publisher = "American Physical Society",
2703 notes = "gga pw91 (as in vasp)",
2706 @Article{baldereschi73,
2707 title = "Mean-Value Point in the Brillouin Zone",
2708 author = "A. Baldereschi",
2709 journal = "Phys. Rev. B",
2712 pages = "5212--5215",
2716 doi = "10.1103/PhysRevB.7.5212",
2717 publisher = "American Physical Society",
2718 notes = "mean value k point",
2722 title = "Ab initio pseudopotential calculations of dopant
2724 journal = "Comput. Mater. Sci.",
2731 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2732 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2733 author = "Jing Zhu",
2734 keywords = "TED (transient enhanced diffusion)",
2735 keywords = "Boron dopant",
2736 keywords = "Carbon dopant",
2737 keywords = "Defect",
2738 keywords = "ab initio pseudopotential method",
2739 keywords = "Impurity cluster",
2740 notes = "binding of c to si interstitial, c in si defects",
2744 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2746 title = "Si{C} buried layer formation by ion beam synthesis at
2750 journal = "Appl. Phys. Lett.",
2753 pages = "2646--2648",
2754 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2755 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2756 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2757 ELECTRON MICROSCOPY",
2758 URL = "http://link.aip.org/link/?APL/66/2646/1",
2759 doi = "10.1063/1.113112",
2760 notes = "precipitation mechanism by substitutional carbon, si
2761 self interstitials react with further implanted c",
2765 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2766 Kolodzey and A. Hairie",
2768 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2772 journal = "J. Appl. Phys.",
2775 pages = "4631--4633",
2776 keywords = "silicon compounds; precipitation; localised modes;
2777 semiconductor epitaxial layers; infrared spectra;
2778 Fourier transform spectra; thermal stability;
2780 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2781 doi = "10.1063/1.368703",
2782 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2786 author = "R Jones and B J Coomer and P R Briddon",
2787 title = "Quantum mechanical modelling of defects in
2789 journal = "J. Phys.: Condens. Matter",
2793 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2795 notes = "ab inito init, vibrational modes, c defect in si",
2799 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2800 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2801 J. E. Greene and S. G. Bishop",
2803 title = "Carbon incorporation pathways and lattice sites in
2804 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2805 molecular-beam epitaxy",
2808 journal = "J. Appl. Phys.",
2811 pages = "5716--5727",
2812 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2813 doi = "10.1063/1.1465122",
2814 notes = "c substitutional incorporation pathway, dft and expt",
2818 title = "Dynamic properties of interstitial carbon and
2819 carbon-carbon pair defects in silicon",
2820 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2822 journal = "Phys. Rev. B",
2825 pages = "2188--2194",
2829 doi = "10.1103/PhysRevB.55.2188",
2830 publisher = "American Physical Society",
2831 notes = "ab initio c in si and di-carbon defect, no formation
2832 energies, different migration barriers and paths",
2836 title = "Interstitial carbon and the carbon-carbon pair in
2837 silicon: Semiempirical electronic-structure
2839 author = "Matthew J. Burnard and Gary G. DeLeo",
2840 journal = "Phys. Rev. B",
2843 pages = "10217--10225",
2847 doi = "10.1103/PhysRevB.47.10217",
2848 publisher = "American Physical Society",
2849 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
2850 carbon defect, formation energies",
2854 title = "Electronic structure of interstitial carbon in
2856 author = "Morgan Besson and Gary G. DeLeo",
2857 journal = "Phys. Rev. B",
2860 pages = "4028--4033",
2864 doi = "10.1103/PhysRevB.43.4028",
2865 publisher = "American Physical Society",
2869 title = "Review of atomistic simulations of surface diffusion
2870 and growth on semiconductors",
2871 journal = "Comput. Mater. Sci.",
2876 note = "Proceedings of the Workshop on Virtual Molecular Beam
2879 doi = "DOI: 10.1016/0927-0256(96)00030-4",
2880 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
2881 author = "Efthimios Kaxiras",
2882 notes = "might contain c 100 db formation energy, overview md,
2883 tight binding, first principles",
2886 @Article{kaukonen98,
2887 title = "Effect of {N} and {B} doping on the growth of {CVD}
2889 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
2891 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
2892 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
2894 journal = "Phys. Rev. B",
2897 pages = "9965--9970",
2901 doi = "10.1103/PhysRevB.57.9965",
2902 publisher = "American Physical Society",
2903 notes = "constrained conjugate gradient relaxation technique
2908 title = "Correlation between the antisite pair and the ${DI}$
2910 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
2911 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
2913 journal = "Phys. Rev. B",
2920 doi = "10.1103/PhysRevB.67.155203",
2921 publisher = "American Physical Society",
2925 title = "Production and recovery of defects in Si{C} after
2926 irradiation and deformation",
2927 journal = "J. Nucl. Mater.",
2930 pages = "1803--1808",
2934 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
2935 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
2936 author = "J. Chen and P. Jung and H. Klein",
2940 title = "Accumulation, dynamic annealing and thermal recovery
2941 of ion-beam-induced disorder in silicon carbide",
2942 journal = "Nucl. Instrum. Methods Phys. Res. B",
2949 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
2950 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
2951 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
2952 keywords = "Amorphization",
2953 keywords = "Irradiation effects",
2954 keywords = "Thermal recovery",
2955 keywords = "Silicon carbide",
2958 @Article{bockstedte03,
2959 title = "Ab initio study of the migration of intrinsic defects
2961 author = "Michel Bockstedte and Alexander Mattausch and Oleg
2963 journal = "Phys. Rev. B",
2970 doi = "10.1103/PhysRevB.68.205201",
2971 publisher = "American Physical Society",
2972 notes = "defect migration in sic",
2976 title = "Theoretical study of vacancy diffusion and
2977 vacancy-assisted clustering of antisites in Si{C}",
2978 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
2980 journal = "Phys. Rev. B",
2987 doi = "10.1103/PhysRevB.68.155208",
2988 publisher = "American Physical Society",