2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 journal = "Phys. Rev. B",
1540 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
1541 publisher = "American Physical Society",
1542 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1543 K. N. Lindner and W. G. Schmidt and E. Rauls",
1544 title = "Combined \textit{ab initio} and classical potential
1545 simulation study on silicon carbide precipitation in
1551 doi = "10.1103/PhysRevB.84.064126",
1553 abstract = "Atomistic simulations on the silicon carbide
1554 precipitation in bulk silicon employing both, classical
1555 potential and first-principles methods are presented.
1556 The calculations aim at a comprehensive, microscopic
1557 understanding of the precipitation mechanism in the
1558 context of controversial discussions in the literature.
1559 For the quantum-mechanical treatment, basic processes
1560 assumed in the precipitation process are calculated in
1561 feasible systems of small size. The migration mechanism
1562 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1563 1 0> self-interstitial in otherwise defect-free silicon
1564 are investigated using density functional theory
1565 calculations. The influence of a nearby vacancy,
1566 another carbon interstitial and a substitutional defect
1567 as well as a silicon self-interstitial has been
1568 investigated systematically. Interactions of various
1569 combinations of defects have been characterized
1570 including a couple of selected migration pathways
1571 within these configurations. Almost all of the
1572 investigated pairs of defects tend to agglomerate
1573 allowing for a reduction in strain. The formation of
1574 structures involving strong carbon-carbon bonds turns
1575 out to be very unlikely. In contrast, substitutional
1576 carbon occurs in all probability. A long range capture
1577 radius has been observed for pairs of interstitial
1578 carbon as well as interstitial carbon and vacancies. A
1579 rather small capture radius is predicted for
1580 substitutional carbon and silicon self-interstitials.
1581 Initial assumptions regarding the precipitation
1582 mechanism of silicon carbide in bulk silicon are
1583 established and conformability to experimental findings
1584 is discussed. Furthermore, results of the accurate
1585 first-principles calculations on defects and carbon
1586 diffusion in silicon are compared to results of
1587 classical potential simulations revealing significant
1588 limitations of the latter method. An approach to work
1589 around this problem is proposed. Finally, results of
1590 the classical potential molecular dynamics simulations
1591 of large systems are examined, which reinforce previous
1592 assumptions and give further insight into basic
1593 processes involved in the silicon carbide transition.",
1597 author = "J. K. N. Lindner and A. Frohnwieser and B.
1598 Rauschenbach and B. Stritzker",
1599 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1601 journal = "MRS Proc.",
1606 doi = "10.1557/PROC-354-171",
1607 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1608 notes = "first time ibs at moderate temperatures",
1612 title = "Formation of buried epitaxial silicon carbide layers
1613 in silicon by ion beam synthesis",
1614 journal = "Mater. Chem. Phys.",
1621 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1622 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1623 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1624 Götz and A. Frohnwieser and B. Rauschenbach and B.
1626 notes = "dose window",
1629 @Article{calcagno96,
1630 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1632 journal = "Nucl. Instrum. Methods Phys. Res. B",
1637 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1638 New Trends in Ion Beam Processing of Materials",
1640 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1641 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1642 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1643 Grimaldi and P. Musumeci",
1644 notes = "dose window, graphitic bonds",
1648 title = "Mechanisms of Si{C} Formation in the Ion Beam
1649 Synthesis of 3{C}-Si{C} Layers in Silicon",
1650 journal = "Mater. Sci. Forum",
1655 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1656 URL = "http://www.scientific.net/MSF.264-268.215",
1657 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1658 notes = "intermediate temperature for sharp interface + good
1663 title = "Controlling the density distribution of Si{C}
1664 nanocrystals for the ion beam synthesis of buried Si{C}
1666 journal = "Nucl. Instrum. Methods Phys. Res. B",
1673 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1674 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1675 author = "J. K. N. Lindner and B. Stritzker",
1676 notes = "two-step implantation process",
1679 @Article{lindner99_2,
1680 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1682 journal = "Nucl. Instrum. Methods Phys. Res. B",
1688 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1689 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1690 author = "J. K. N. Lindner and B. Stritzker",
1691 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1695 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1696 Basic physical processes",
1697 journal = "Nucl. Instrum. Methods Phys. Res. B",
1704 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1705 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1706 author = "J{\"{o}}rg K. N. Lindner",
1710 title = "High-dose carbon implantations into silicon:
1711 fundamental studies for new technological tricks",
1712 author = "J. K. N. Lindner",
1713 journal = "Appl. Phys. A",
1717 doi = "10.1007/s00339-002-2062-8",
1718 notes = "ibs, burried sic layers",
1722 title = "On the balance between ion beam induced nanoparticle
1723 formation and displacive precipitate resolution in the
1725 journal = "Mater. Sci. Eng., C",
1730 note = "Current Trends in Nanoscience - from Materials to
1733 doi = "DOI: 10.1016/j.msec.2005.09.099",
1734 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1735 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1737 notes = "c int diffusion barrier",
1740 @Article{haeberlen10,
1741 title = "Structural characterization of cubic and hexagonal
1742 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
1743 journal = "Journal of Crystal Growth",
1750 doi = "10.1016/j.jcrysgro.2009.12.048",
1751 URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
1752 author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
1753 K. N. Lindner and B. Stritzker",
1757 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1758 application in buffer layer for Ga{N} epitaxial
1760 journal = "Appl. Surf. Sci.",
1765 note = "APHYS'03 Special Issue",
1767 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1768 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1769 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1770 and S. Nishio and K. Yasuda and Y. Ishigami",
1771 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1774 @Article{yamamoto04,
1775 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1776 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1777 implantation into Si(1 1 1) substrate",
1778 journal = "J. Cryst. Growth",
1783 note = "Proceedings of the 11th Biennial (US) Workshop on
1784 Organometallic Vapor Phase Epitaxy (OMVPE)",
1786 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1787 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1788 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1789 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1790 notes = "gan on 3c-sic",
1794 title = "Substrates for gallium nitride epitaxy",
1795 journal = "Mater. Sci. Eng., R",
1802 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1803 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1804 author = "L. Liu and J. H. Edgar",
1805 notes = "gan substrates",
1808 @Article{takeuchi91,
1809 title = "Growth of single crystalline Ga{N} film on Si
1810 substrate using 3{C}-Si{C} as an intermediate layer",
1811 journal = "J. Cryst. Growth",
1818 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1819 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1820 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1821 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1822 notes = "gan on 3c-sic (first time?)",
1826 author = "B. J. Alder and T. E. Wainwright",
1827 title = "Phase Transition for a Hard Sphere System",
1830 journal = "J. Chem. Phys.",
1833 pages = "1208--1209",
1834 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1835 doi = "10.1063/1.1743957",
1839 author = "B. J. Alder and T. E. Wainwright",
1840 title = "Studies in Molecular Dynamics. {I}. General Method",
1843 journal = "J. Chem. Phys.",
1847 URL = "http://link.aip.org/link/?JCP/31/459/1",
1848 doi = "10.1063/1.1730376",
1851 @Article{horsfield96,
1852 title = "Bond-order potentials: Theory and implementation",
1853 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1854 D. G. Pettifor and M. Aoki",
1855 journal = "Phys. Rev. B",
1858 pages = "12694--12712",
1862 doi = "10.1103/PhysRevB.53.12694",
1863 publisher = "American Physical Society",
1867 title = "Empirical chemical pseudopotential theory of molecular
1868 and metallic bonding",
1869 author = "G. C. Abell",
1870 journal = "Phys. Rev. B",
1873 pages = "6184--6196",
1877 doi = "10.1103/PhysRevB.31.6184",
1878 publisher = "American Physical Society",
1881 @Article{tersoff_si1,
1882 title = "New empirical model for the structural properties of
1884 author = "J. Tersoff",
1885 journal = "Phys. Rev. Lett.",
1892 doi = "10.1103/PhysRevLett.56.632",
1893 publisher = "American Physical Society",
1897 title = "Development of a many-body Tersoff-type potential for
1899 author = "Brian W. Dodson",
1900 journal = "Phys. Rev. B",
1903 pages = "2795--2798",
1907 doi = "10.1103/PhysRevB.35.2795",
1908 publisher = "American Physical Society",
1911 @Article{tersoff_si2,
1912 title = "New empirical approach for the structure and energy of
1914 author = "J. Tersoff",
1915 journal = "Phys. Rev. B",
1918 pages = "6991--7000",
1922 doi = "10.1103/PhysRevB.37.6991",
1923 publisher = "American Physical Society",
1926 @Article{tersoff_si3,
1927 title = "Empirical interatomic potential for silicon with
1928 improved elastic properties",
1929 author = "J. Tersoff",
1930 journal = "Phys. Rev. B",
1933 pages = "9902--9905",
1937 doi = "10.1103/PhysRevB.38.9902",
1938 publisher = "American Physical Society",
1942 title = "Empirical Interatomic Potential for Carbon, with
1943 Applications to Amorphous Carbon",
1944 author = "J. Tersoff",
1945 journal = "Phys. Rev. Lett.",
1948 pages = "2879--2882",
1952 doi = "10.1103/PhysRevLett.61.2879",
1953 publisher = "American Physical Society",
1957 title = "Modeling solid-state chemistry: Interatomic potentials
1958 for multicomponent systems",
1959 author = "J. Tersoff",
1960 journal = "Phys. Rev. B",
1963 pages = "5566--5568",
1967 doi = "10.1103/PhysRevB.39.5566",
1968 publisher = "American Physical Society",
1972 title = "Carbon defects and defect reactions in silicon",
1973 author = "J. Tersoff",
1974 journal = "Phys. Rev. Lett.",
1977 pages = "1757--1760",
1981 doi = "10.1103/PhysRevLett.64.1757",
1982 publisher = "American Physical Society",
1986 title = "Point defects and dopant diffusion in silicon",
1987 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1988 journal = "Rev. Mod. Phys.",
1995 doi = "10.1103/RevModPhys.61.289",
1996 publisher = "American Physical Society",
2000 title = "Silicon carbide: synthesis and processing",
2001 journal = "Nucl. Instrum. Methods Phys. Res. B",
2006 note = "Radiation Effects in Insulators",
2008 doi = "DOI: 10.1016/0168-583X(96)00065-1",
2009 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
2010 author = "W. Wesch",
2014 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
2015 Palmour and J. A. Edmond",
2016 journal = "Proc. IEEE",
2017 title = "Thin film deposition and microelectronic and
2018 optoelectronic device fabrication and characterization
2019 in monocrystalline alpha and beta silicon carbide",
2025 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2026 diode;SiC;dry etching;electrical
2027 contacts;etching;impurity incorporation;optoelectronic
2028 device fabrication;solid-state devices;surface
2029 chemistry;Schottky effect;Schottky gate field effect
2030 transistors;Schottky-barrier
2031 diodes;etching;heterojunction bipolar
2032 transistors;insulated gate field effect
2033 transistors;light emitting diodes;semiconductor
2034 materials;semiconductor thin films;silicon compounds;",
2035 doi = "10.1109/5.90132",
2037 notes = "sic growth methods",
2041 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2042 Lin and B. Sverdlov and M. Burns",
2044 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2045 ZnSe-based semiconductor device technologies",
2048 journal = "J. Appl. Phys.",
2051 pages = "1363--1398",
2052 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2053 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2054 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2056 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2057 doi = "10.1063/1.358463",
2058 notes = "sic intro, properties",
2062 author = "Noch Unbekannt",
2063 title = "How to find references",
2064 journal = "Journal of Applied References",
2071 title = "Atomistic simulation of thermomechanical properties of
2073 author = "Meijie Tang and Sidney Yip",
2074 journal = "Phys. Rev. B",
2077 pages = "15150--15159",
2080 doi = "10.1103/PhysRevB.52.15150",
2081 notes = "modified tersoff, scale cutoff with volume, promising
2082 tersoff reparametrization",
2083 publisher = "American Physical Society",
2087 title = "Silicon carbide as a new {MEMS} technology",
2088 journal = "Seonsor. Actuator. A",
2094 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2095 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2096 author = "Pasqualina M. Sarro",
2098 keywords = "Silicon carbide",
2099 keywords = "Micromachining",
2100 keywords = "Mechanical stress",
2104 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2105 semiconductor for high-temperature applications: {A}
2107 journal = "Solid-State Electron.",
2110 pages = "1409--1422",
2113 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2114 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2115 author = "J. B. Casady and R. W. Johnson",
2116 notes = "sic intro",
2119 @Article{giancarli98,
2120 title = "Design requirements for Si{C}/Si{C} composites
2121 structural material in fusion power reactor blankets",
2122 journal = "Fusion Eng. Des.",
2128 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2129 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2130 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2131 Marois and N. B. Morley and J. F. Salavy",
2135 title = "Electrical and optical characterization of Si{C}",
2136 journal = "Physica B",
2142 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2143 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2144 author = "G. Pensl and W. J. Choyke",
2148 title = "Investigation of growth processes of ingots of silicon
2149 carbide single crystals",
2150 journal = "J. Cryst. Growth",
2155 notes = "modified lely process",
2157 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2158 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2159 author = "Yu. M. Tairov and V. F. Tsvetkov",
2163 title = "General principles of growing large-size single
2164 crystals of various silicon carbide polytypes",
2165 journal = "J. Cryst. Growth",
2172 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2173 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2174 author = "Yu.M. Tairov and V. F. Tsvetkov",
2178 title = "Si{C} boule growth by sublimation vapor transport",
2179 journal = "J. Cryst. Growth",
2186 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2187 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2188 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2189 R. H. Hopkins and W. J. Choyke",
2193 title = "Growth of large Si{C} single crystals",
2194 journal = "J. Cryst. Growth",
2201 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2202 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2203 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2204 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2209 title = "Control of polytype formation by surface energy
2210 effects during the growth of Si{C} monocrystals by the
2211 sublimation method",
2212 journal = "J. Cryst. Growth",
2219 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2220 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2221 author = "R. A. Stein and P. Lanig",
2222 notes = "6h and 4h, sublimation technique",
2226 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2229 title = "Production of large-area single-crystal wafers of
2230 cubic Si{C} for semiconductor devices",
2233 journal = "Appl. Phys. Lett.",
2237 keywords = "silicon carbides; layers; chemical vapor deposition;
2239 URL = "http://link.aip.org/link/?APL/42/460/1",
2240 doi = "10.1063/1.93970",
2241 notes = "cvd of 3c-sic on si, sic buffer layer",
2244 @Article{nagasawa06,
2245 author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
2246 title = "Reducing Planar Defects in 3{C}¿Si{C}",
2247 journal = "Chemical Vapor Deposition",
2250 publisher = "WILEY-VCH Verlag",
2252 URL = "http://dx.doi.org/10.1002/cvde.200506466",
2253 doi = "10.1002/cvde.200506466",
2255 keywords = "Defect structures, Epitaxy, Silicon carbide",
2257 notes = "cvd on si",
2261 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2262 and Hiroyuki Matsunami",
2264 title = "Epitaxial growth and electric characteristics of cubic
2268 journal = "J. Appl. Phys.",
2271 pages = "4889--4893",
2272 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2273 doi = "10.1063/1.338355",
2274 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2279 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2281 title = "Growth and Characterization of Cubic Si{C}
2282 Single-Crystal Films on Si",
2285 journal = "J. Electrochem. Soc.",
2288 pages = "1558--1565",
2289 keywords = "semiconductor materials; silicon compounds; carbon
2290 compounds; crystal morphology; electron mobility",
2291 URL = "http://link.aip.org/link/?JES/134/1558/1",
2292 doi = "10.1149/1.2100708",
2293 notes = "blue light emitting diodes (led)",
2296 @Article{powell87_2,
2297 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2298 C. M. Chorey and T. T. Cheng and P. Pirouz",
2300 title = "Improved beta-Si{C} heteroepitaxial films using
2301 off-axis Si substrates",
2304 journal = "Appl. Phys. Lett.",
2308 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2309 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2310 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2311 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2312 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2313 URL = "http://link.aip.org/link/?APL/51/823/1",
2314 doi = "10.1063/1.98824",
2315 notes = "improved sic on off-axis si substrates, reduced apbs",
2319 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2320 journal = "J. Cryst. Growth",
2327 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2328 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2329 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2331 notes = "step-controlled epitaxy model",
2335 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2336 and Hiroyuki Matsunami",
2337 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2341 journal = "J. Appl. Phys.",
2345 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2346 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2348 URL = "http://link.aip.org/link/?JAP/73/726/1",
2349 doi = "10.1063/1.353329",
2350 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2353 @Article{powell90_2,
2354 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2355 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2356 Yoganathan and J. Yang and P. Pirouz",
2358 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2359 vicinal (0001) 6{H}-Si{C} wafers",
2362 journal = "Appl. Phys. Lett.",
2365 pages = "1442--1444",
2366 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2367 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
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2369 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2370 URL = "http://link.aip.org/link/?APL/56/1442/1",
2371 doi = "10.1063/1.102492",
2372 notes = "cvd of 6h-sic on 6h-sic",
2376 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2378 title = "Chemical vapor deposition and characterization of
2379 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2383 journal = "J. Appl. Phys.",
2386 pages = "2672--2679",
2387 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2388 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2389 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2390 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2391 PHASE EPITAXY; CRYSTAL ORIENTATION",
2392 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2393 doi = "10.1063/1.341608",
2397 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2398 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2399 Yoganathan and J. Yang and P. Pirouz",
2401 title = "Growth of improved quality 3{C}-Si{C} films on
2402 6{H}-Si{C} substrates",
2405 journal = "Appl. Phys. Lett.",
2408 pages = "1353--1355",
2409 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2410 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2411 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2413 URL = "http://link.aip.org/link/?APL/56/1353/1",
2414 doi = "10.1063/1.102512",
2415 notes = "cvd of 3c-sic on 6h-sic",
2419 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2420 Rozgonyi and K. L. More",
2422 title = "An examination of double positioning boundaries and
2423 interface misfit in beta-Si{C} films on alpha-Si{C}
2427 journal = "J. Appl. Phys.",
2430 pages = "2645--2650",
2431 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2432 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
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2435 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
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2437 doi = "10.1063/1.341004",
2441 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2442 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2443 and W. J. Choyke and L. Clemen and M. Yoganathan",
2445 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2446 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2449 journal = "Appl. Phys. Lett.",
2453 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2454 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2455 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2456 URL = "http://link.aip.org/link/?APL/59/333/1",
2457 doi = "10.1063/1.105587",
2461 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2462 Thokala and M. J. Loboda",
2464 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2465 films on 6{H}-Si{C} by chemical vapor deposition from
2469 journal = "J. Appl. Phys.",
2472 pages = "1271--1273",
2473 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2474 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2476 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2477 doi = "10.1063/1.360368",
2478 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2482 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2483 properties of its p-n junction",
2484 journal = "J. Cryst. Growth",
2491 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2492 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2493 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2495 notes = "first time ssmbe of 3c-sic on 6h-sic",
2499 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2500 [alpha]-Si{C}(0001) at low temperatures by solid-source
2501 molecular beam epitaxy",
2502 journal = "J. Cryst. Growth",
2508 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2509 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2510 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2511 Schr{\"{o}}ter and W. Richter",
2512 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2515 @Article{fissel95_apl,
2516 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2518 title = "Low-temperature growth of Si{C} thin films on Si and
2519 6{H}--Si{C} by solid-source molecular beam epitaxy",
2522 journal = "Appl. Phys. Lett.",
2525 pages = "3182--3184",
2526 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2528 URL = "http://link.aip.org/link/?APL/66/3182/1",
2529 doi = "10.1063/1.113716",
2530 notes = "mbe 3c-sic on si and 6h-sic",
2534 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2535 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2537 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2538 migration enhanced epitaxy controlled to an atomic
2539 level using surface superstructures",
2542 journal = "Appl. Phys. Lett.",
2545 pages = "1204--1206",
2546 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
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2549 URL = "http://link.aip.org/link/?APL/68/1204/1",
2550 doi = "10.1063/1.115969",
2551 notes = "ss mbe sic, superstructure, reconstruction",
2555 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2556 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2557 C. M. Bertoni and A. Catellani",
2558 journal = "Phys. Rev. Lett.",
2565 doi = "10.1103/PhysRevLett.91.136101",
2566 publisher = "American Physical Society",
2567 notes = "dft calculations mbe sic growth",
2571 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2573 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2577 journal = "Appl. Phys. Lett.",
2581 URL = "http://link.aip.org/link/?APL/18/509/1",
2582 doi = "10.1063/1.1653516",
2583 notes = "first time sic by ibs, follow cites for precipitation
2588 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2589 and E. V. Lubopytova",
2590 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2591 by ion implantation",
2592 publisher = "Taylor \& Francis",
2594 journal = "Radiat. Eff.",
2598 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2599 notes = "3c-sic for different temperatures, amorphous, poly,
2600 single crystalline",
2603 @Article{akimchenko80,
2604 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2605 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2606 title = "Structure and optical properties of silicon implanted
2607 by high doses of 70 and 310 ke{V} carbon ions",
2608 publisher = "Taylor \& Francis",
2610 journal = "Radiat. Eff.",
2614 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2615 notes = "3c-sic nucleation by thermal spikes",
2619 title = "Structure and annealing properties of silicon carbide
2620 thin layers formed by implantation of carbon ions in
2622 journal = "Thin Solid Films",
2629 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2630 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2631 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2636 title = "Characteristics of the synthesis of [beta]-Si{C} by
2637 the implantation of carbon ions into silicon",
2638 journal = "Thin Solid Films",
2645 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2646 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2647 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2652 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2653 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2654 Chater and J. A. Iulner and J. Davis",
2655 title = "Formation mechanisms and structures of insulating
2656 compounds formed in silicon by ion beam synthesis",
2657 publisher = "Taylor \& Francis",
2659 journal = "Radiat. Eff.",
2663 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2664 notes = "ibs, comparison with sio and sin, higher temp or time,
2665 no c redistribution",
2669 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2670 J. Davis and G. E. Celler",
2672 title = "Formation of buried layers of beta-Si{C} using ion
2673 beam synthesis and incoherent lamp annealing",
2676 journal = "Appl. Phys. Lett.",
2679 pages = "2242--2244",
2680 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2681 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2682 URL = "http://link.aip.org/link/?APL/51/2242/1",
2683 doi = "10.1063/1.98953",
2684 notes = "nice tem images, sic by ibs",
2688 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2689 and M. Olivier and A. M. Papon and G. Rolland",
2691 title = "High-temperature ion beam synthesis of cubic Si{C}",
2694 journal = "J. Appl. Phys.",
2697 pages = "2908--2912",
2698 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2699 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2700 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2701 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2702 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2703 REACTIONS; MONOCRYSTALS",
2704 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2705 doi = "10.1063/1.346092",
2706 notes = "triple energy implantation to overcome high annealing
2711 author = "R. I. Scace and G. A. Slack",
2713 title = "Solubility of Carbon in Silicon and Germanium",
2716 journal = "J. Chem. Phys.",
2719 pages = "1551--1555",
2720 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2721 doi = "10.1063/1.1730236",
2722 notes = "solubility of c in c-si, si-c phase diagram",
2726 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2728 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2729 Laboratories Eindhoven Netherlands Eindhoven
2731 title = "Boron implantations in silicon: {A} comparison of
2732 charge carrier and boron concentration profiles",
2733 journal = "Appl. Phys. A",
2734 publisher = "Springer Berlin / Heidelberg",
2736 keyword = "Physics and Astronomy",
2740 URL = "http://dx.doi.org/10.1007/BF00884267",
2741 note = "10.1007/BF00884267",
2743 notes = "first time ted (only for boron?)",
2747 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2750 title = "Rapid annealing and the anomalous diffusion of ion
2751 implanted boron into silicon",
2754 journal = "Appl. Phys. Lett.",
2758 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2759 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2760 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2761 URL = "http://link.aip.org/link/?APL/50/416/1",
2762 doi = "10.1063/1.98160",
2763 notes = "ted of boron in si",
2767 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2770 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2771 time, and matrix dependence of atomic and electrical
2775 journal = "J. Appl. Phys.",
2778 pages = "6191--6198",
2779 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2780 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2781 CRYSTALS; AMORPHIZATION",
2782 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2783 doi = "10.1063/1.346910",
2784 notes = "ted of boron in si",
2788 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2789 F. W. Saris and W. Vandervorst",
2791 title = "Role of {C} and {B} clusters in transient diffusion of
2795 journal = "Appl. Phys. Lett.",
2798 pages = "1150--1152",
2799 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2800 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2802 URL = "http://link.aip.org/link/?APL/68/1150/1",
2803 doi = "10.1063/1.115706",
2804 notes = "suppression of transient enhanced diffusion (ted)",
2808 title = "Implantation and transient boron diffusion: the role
2809 of the silicon self-interstitial",
2810 journal = "Nucl. Instrum. Methods Phys. Res. B",
2815 note = "Selected Papers of the Tenth International Conference
2816 on Ion Implantation Technology (IIT '94)",
2818 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2819 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2820 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2825 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2826 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2827 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2830 title = "Physical mechanisms of transient enhanced dopant
2831 diffusion in ion-implanted silicon",
2834 journal = "J. Appl. Phys.",
2837 pages = "6031--6050",
2838 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2839 doi = "10.1063/1.364452",
2840 notes = "ted, transient enhanced diffusion, c silicon trap",
2844 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2846 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2847 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2850 journal = "Appl. Phys. Lett.",
2854 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2855 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2856 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2858 URL = "http://link.aip.org/link/?APL/64/324/1",
2859 doi = "10.1063/1.111195",
2860 notes = "beta sic nano crystals in si, mbe, annealing",
2864 author = "Richard A. Soref",
2866 title = "Optical band gap of the ternary semiconductor Si[sub 1
2867 - x - y]Ge[sub x]{C}[sub y]",
2870 journal = "J. Appl. Phys.",
2873 pages = "2470--2472",
2874 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2875 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2877 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2878 doi = "10.1063/1.349403",
2879 notes = "band gap of strained si by c",
2883 author = "E Kasper",
2884 title = "Superlattices of group {IV} elements, a new
2885 possibility to produce direct band gap material",
2886 journal = "Phys. Scr.",
2889 URL = "http://stacks.iop.org/1402-4896/T35/232",
2891 notes = "superlattices, convert indirect band gap into a
2896 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2899 title = "Growth and strain compensation effects in the ternary
2900 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2903 journal = "Appl. Phys. Lett.",
2906 pages = "3033--3035",
2907 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2908 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2909 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2910 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2912 URL = "http://link.aip.org/link/?APL/60/3033/1",
2913 doi = "10.1063/1.106774",
2917 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2920 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2924 journal = "J. Vac. Sci. Technol. B",
2927 pages = "1064--1068",
2928 location = "Ottawa (Canada)",
2929 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2930 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2931 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2932 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2933 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2934 doi = "10.1116/1.587008",
2935 notes = "substitutional c in si by mbe",
2938 @Article{powell93_2,
2939 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2940 of the ternary system",
2941 journal = "J. Cryst. Growth",
2948 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2949 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2950 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2955 author = "H. J. Osten",
2956 title = "Modification of Growth Modes in Lattice-Mismatched
2957 Epitaxial Systems: Si/Ge",
2958 journal = "phys. status solidi (a)",
2961 publisher = "WILEY-VCH Verlag",
2963 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2964 doi = "10.1002/pssa.2211450203",
2969 @Article{dietrich94,
2970 title = "Lattice distortion in a strain-compensated
2971 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2972 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2973 Methfessel and P. Zaumseil",
2974 journal = "Phys. Rev. B",
2977 pages = "17185--17190",
2981 doi = "10.1103/PhysRevB.49.17185",
2982 publisher = "American Physical Society",
2986 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2988 title = "Growth of an inverse tetragonal distorted SiGe layer
2989 on Si(001) by adding small amounts of carbon",
2992 journal = "Appl. Phys. Lett.",
2995 pages = "3440--3442",
2996 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2997 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2998 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
3000 URL = "http://link.aip.org/link/?APL/64/3440/1",
3001 doi = "10.1063/1.111235",
3002 notes = "inversely strained / distorted heterostructure",
3006 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
3007 LeGoues and J. C. Tsang and F. Cardone",
3009 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
3010 molecular beam epitaxy",
3013 journal = "Appl. Phys. Lett.",
3017 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
3018 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
3019 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
3020 FILM GROWTH; MICROSTRUCTURE",
3021 URL = "http://link.aip.org/link/?APL/60/356/1",
3022 doi = "10.1063/1.106655",
3026 author = "H. J. Osten and J. Griesche and S. Scalese",
3028 title = "Substitutional carbon incorporation in epitaxial
3029 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
3030 molecular beam epitaxy",
3033 journal = "Appl. Phys. Lett.",
3037 keywords = "molecular beam epitaxial growth; semiconductor growth;
3038 wide band gap semiconductors; interstitials; silicon
3040 URL = "http://link.aip.org/link/?APL/74/836/1",
3041 doi = "10.1063/1.123384",
3042 notes = "substitutional c in si by mbe",
3046 author = "M. Born and R. Oppenheimer",
3047 title = "Zur Quantentheorie der Molekeln",
3048 journal = "Ann. Phys. (Leipzig)",
3051 publisher = "WILEY-VCH Verlag",
3053 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3054 doi = "10.1002/andp.19273892002",
3059 @Article{hohenberg64,
3060 title = "Inhomogeneous Electron Gas",
3061 author = "P. Hohenberg and W. Kohn",
3062 journal = "Phys. Rev.",
3065 pages = "B864--B871",
3069 doi = "10.1103/PhysRev.136.B864",
3070 publisher = "American Physical Society",
3071 notes = "density functional theory, dft",
3075 title = "The calculation of atomic fields",
3076 author = "L. H. Thomas",
3077 journal = "Proc. Cambridge Philos. Soc.",
3081 doi = "10.1017/S0305004100011683",
3086 author = "E. Fermi",
3087 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3095 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3096 Central Field. Part {I}. Theory and Methods",
3097 author = "D. R. Hartree",
3098 journal = "Proc. Cambridge Philos. Soc.",
3102 doi = "10.1017/S0305004100011919",
3106 title = "The Theory of Complex Spectra",
3107 author = "J. C. Slater",
3108 journal = "Phys. Rev.",
3111 pages = "1293--1322",
3115 doi = "10.1103/PhysRev.34.1293",
3116 publisher = "American Physical Society",
3120 title = "Self-Consistent Equations Including Exchange and
3121 Correlation Effects",
3122 author = "W. Kohn and L. J. Sham",
3123 journal = "Phys. Rev.",
3126 pages = "A1133--A1138",
3130 doi = "10.1103/PhysRev.140.A1133",
3131 publisher = "American Physical Society",
3132 notes = "dft, exchange and correlation",
3136 title = "Density Functional and Density Matrix Method Scaling
3137 Linearly with the Number of Atoms",
3139 journal = "Phys. Rev. Lett.",
3142 pages = "3168--3171",
3146 doi = "10.1103/PhysRevLett.76.3168",
3147 publisher = "American Physical Society",
3151 title = "Edge Electron Gas",
3152 author = "Walter Kohn and Ann E. Mattsson",
3153 journal = "Phys. Rev. Lett.",
3156 pages = "3487--3490",
3160 doi = "10.1103/PhysRevLett.81.3487",
3161 publisher = "American Physical Society",
3165 title = "Nobel Lecture: Electronic structure of matter---wave
3166 functions and density functionals",
3168 journal = "Rev. Mod. Phys.",
3171 pages = "1253--1266",
3175 doi = "10.1103/RevModPhys.71.1253",
3176 publisher = "American Physical Society",
3180 title = "Iterative minimization techniques for ab initio
3181 total-energy calculations: molecular dynamics and
3182 conjugate gradients",
3183 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3184 Arias and J. D. Joannopoulos",
3185 journal = "Rev. Mod. Phys.",
3188 pages = "1045--1097",
3192 doi = "10.1103/RevModPhys.64.1045",
3193 publisher = "American Physical Society",
3197 title = "Electron densities in search of Hamiltonians",
3198 author = "Mel Levy",
3199 journal = "Phys. Rev. A",
3202 pages = "1200--1208",
3206 doi = "10.1103/PhysRevA.26.1200",
3207 publisher = "American Physical Society",
3211 title = "Strain-stabilized highly concentrated pseudomorphic
3212 $Si1-x$$Cx$ layers in Si",
3213 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3215 journal = "Phys. Rev. Lett.",
3218 pages = "3578--3581",
3222 doi = "10.1103/PhysRevLett.72.3578",
3223 publisher = "American Physical Society",
3224 notes = "high c concentration in si, heterostructure, strained
3229 title = "Phosphorous Doping of Strain-Induced
3230 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3231 by Low-Temperature Chemical Vapor Deposition",
3232 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3233 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3234 journal = "Japanese J. Appl. Phys.",
3236 number = "Part 1, No. 4B",
3237 pages = "2472--2475",
3240 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3241 doi = "10.1143/JJAP.41.2472",
3242 publisher = "The Japan Society of Applied Physics",
3243 notes = "experimental charge carrier mobility in strained si",
3247 title = "Electron Transport Model for Strained Silicon-Carbon
3249 author = "Shu-Tong Chang and Chung-Yi Lin",
3250 journal = "Japanese J. Appl. Phys.",
3253 pages = "2257--2262",
3256 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3257 doi = "10.1143/JJAP.44.2257",
3258 publisher = "The Japan Society of Applied Physics",
3259 notes = "enhance of electron mobility in strained si",
3262 @Article{kissinger94,
3263 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3266 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3267 y] layers on Si(001)",
3270 journal = "Appl. Phys. Lett.",
3273 pages = "3356--3358",
3274 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3275 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3276 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3277 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3278 URL = "http://link.aip.org/link/?APL/65/3356/1",
3279 doi = "10.1063/1.112390",
3280 notes = "strained si influence on optical properties",
3284 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3287 title = "Substitutional versus interstitial carbon
3288 incorporation during pseudomorphic growth of Si[sub 1 -
3289 y]{C}[sub y] on Si(001)",
3292 journal = "J. Appl. Phys.",
3295 pages = "6711--6715",
3296 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3297 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3299 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3300 doi = "10.1063/1.363797",
3301 notes = "mbe substitutional vs interstitial c incorporation",
3305 author = "H. J. Osten and P. Gaworzewski",
3307 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3308 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3312 journal = "J. Appl. Phys.",
3315 pages = "4977--4981",
3316 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3317 semiconductors; semiconductor epitaxial layers; carrier
3318 density; Hall mobility; interstitials; defect states",
3319 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3320 doi = "10.1063/1.366364",
3321 notes = "charge transport in strained si",
3325 title = "Carbon-mediated aggregation of self-interstitials in
3326 silicon: {A} large-scale molecular dynamics study",
3327 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3328 journal = "Phys. Rev. B",
3335 doi = "10.1103/PhysRevB.69.155214",
3336 publisher = "American Physical Society",
3337 notes = "simulation using promising tersoff reparametrization",
3341 title = "Event-Based Relaxation of Continuous Disordered
3343 author = "G. T. Barkema and Normand Mousseau",
3344 journal = "Phys. Rev. Lett.",
3347 pages = "4358--4361",
3351 doi = "10.1103/PhysRevLett.77.4358",
3352 publisher = "American Physical Society",
3353 notes = "activation relaxation technique, art, speed up slow
3358 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3359 Minoukadeh and F. Willaime",
3361 title = "Some improvements of the activation-relaxation
3362 technique method for finding transition pathways on
3363 potential energy surfaces",
3366 journal = "J. Chem. Phys.",
3372 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3373 surfaces; vacancies (crystal)",
3374 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3375 doi = "10.1063/1.3088532",
3376 notes = "improvements to art, refs for methods to find
3377 transition pathways",
3380 @Article{parrinello81,
3381 author = "M. Parrinello and A. Rahman",
3383 title = "Polymorphic transitions in single crystals: {A} new
3384 molecular dynamics method",
3387 journal = "J. Appl. Phys.",
3390 pages = "7182--7190",
3391 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3392 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3393 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3394 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3395 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3397 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3398 doi = "10.1063/1.328693",
3401 @Article{stillinger85,
3402 title = "Computer simulation of local order in condensed phases
3404 author = "Frank H. Stillinger and Thomas A. Weber",
3405 journal = "Phys. Rev. B",
3408 pages = "5262--5271",
3412 doi = "10.1103/PhysRevB.31.5262",
3413 publisher = "American Physical Society",
3417 title = "Empirical potential for hydrocarbons for use in
3418 simulating the chemical vapor deposition of diamond
3420 author = "Donald W. Brenner",
3421 journal = "Phys. Rev. B",
3424 pages = "9458--9471",
3428 doi = "10.1103/PhysRevB.42.9458",
3429 publisher = "American Physical Society",
3430 notes = "brenner hydro carbons",
3434 title = "Modeling of Covalent Bonding in Solids by Inversion of
3435 Cohesive Energy Curves",
3436 author = "Martin Z. Bazant and Efthimios Kaxiras",
3437 journal = "Phys. Rev. Lett.",
3440 pages = "4370--4373",
3444 doi = "10.1103/PhysRevLett.77.4370",
3445 publisher = "American Physical Society",
3446 notes = "first si edip",
3450 title = "Environment-dependent interatomic potential for bulk
3452 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3454 journal = "Phys. Rev. B",
3457 pages = "8542--8552",
3461 doi = "10.1103/PhysRevB.56.8542",
3462 publisher = "American Physical Society",
3463 notes = "second si edip",
3467 title = "Interatomic potential for silicon defects and
3469 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3470 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3471 journal = "Phys. Rev. B",
3474 pages = "2539--2550",
3478 doi = "10.1103/PhysRevB.58.2539",
3479 publisher = "American Physical Society",
3480 notes = "latest si edip, good dislocation explanation",
3484 journal = "{PARCAS} molecular dynamics code",
3485 author = "K. Nordlund",
3490 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3492 author = "Arthur F. Voter",
3493 journal = "Phys. Rev. Lett.",
3496 pages = "3908--3911",
3500 doi = "10.1103/PhysRevLett.78.3908",
3501 publisher = "American Physical Society",
3502 notes = "hyperdynamics, accelerated md",
3506 author = "Arthur F. Voter",
3508 title = "A method for accelerating the molecular dynamics
3509 simulation of infrequent events",
3512 journal = "J. Chem. Phys.",
3515 pages = "4665--4677",
3516 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3517 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3518 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3519 energy functions; surface diffusion; reaction kinetics
3520 theory; potential energy surfaces",
3521 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3522 doi = "10.1063/1.473503",
3523 notes = "improved hyperdynamics md",
3526 @Article{sorensen2000,
3527 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3529 title = "Temperature-accelerated dynamics for simulation of
3533 journal = "J. Chem. Phys.",
3536 pages = "9599--9606",
3537 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3538 MOLECULAR DYNAMICS METHOD; surface diffusion",
3539 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3540 doi = "10.1063/1.481576",
3541 notes = "temperature accelerated dynamics, tad",
3545 title = "Parallel replica method for dynamics of infrequent
3547 author = "Arthur F. Voter",
3548 journal = "Phys. Rev. B",
3551 pages = "R13985--R13988",
3555 doi = "10.1103/PhysRevB.57.R13985",
3556 publisher = "American Physical Society",
3557 notes = "parallel replica method, accelerated md",
3561 author = "Xiongwu Wu and Shaomeng Wang",
3563 title = "Enhancing systematic motion in molecular dynamics
3567 journal = "J. Chem. Phys.",
3570 pages = "9401--9410",
3571 keywords = "molecular dynamics method; argon; Lennard-Jones
3572 potential; crystallisation; liquid theory",
3573 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3574 doi = "10.1063/1.478948",
3575 notes = "self guided md, sgmd, accelerated md, enhancing
3579 @Article{choudhary05,
3580 author = "Devashish Choudhary and Paulette Clancy",
3582 title = "Application of accelerated molecular dynamics schemes
3583 to the production of amorphous silicon",
3586 journal = "J. Chem. Phys.",
3592 keywords = "molecular dynamics method; silicon; glass structure;
3593 amorphous semiconductors",
3594 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3595 doi = "10.1063/1.1878733",
3596 notes = "explanation of sgmd and hyper md, applied to amorphous
3601 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3603 title = "Carbon precipitation in silicon: Why is it so
3607 journal = "Appl. Phys. Lett.",
3610 pages = "3336--3338",
3611 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3612 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3614 URL = "http://link.aip.org/link/?APL/62/3336/1",
3615 doi = "10.1063/1.109063",
3616 notes = "interfacial energy of cubic sic and si, si self
3617 interstitials necessary for precipitation, volume
3618 decrease, high interface energy",
3621 @Article{chaussende08,
3622 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3623 journal = "J. Cryst. Growth",
3628 note = "Proceedings of the E-MRS Conference, Symposium G -
3629 Substrates of Wide Bandgap Materials",
3631 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3632 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3633 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3634 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3635 and A. Andreadou and E. K. Polychroniadis and C.
3636 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3637 notes = "3c-sic crystal growth, sic fabrication + links,
3641 @Article{chaussende07,
3642 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3643 title = "Status of Si{C} bulk growth processes",
3644 journal = "J. Phys. D",
3648 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3650 notes = "review of sic single crystal growth methods, process
3655 title = "Forces in Molecules",
3656 author = "R. P. Feynman",
3657 journal = "Phys. Rev.",
3664 doi = "10.1103/PhysRev.56.340",
3665 publisher = "American Physical Society",
3666 notes = "hellmann feynman forces",
3670 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3671 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3672 their Contrasting Properties",
3673 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3675 journal = "Phys. Rev. Lett.",
3682 doi = "10.1103/PhysRevLett.84.943",
3683 publisher = "American Physical Society",
3684 notes = "si sio2 and sic sio2 interface",
3687 @Article{djurabekova08,
3688 title = "Atomistic simulation of the interface structure of Si
3689 nanocrystals embedded in amorphous silica",
3690 author = "Flyura Djurabekova and Kai Nordlund",
3691 journal = "Phys. Rev. B",
3698 doi = "10.1103/PhysRevB.77.115325",
3699 publisher = "American Physical Society",
3700 notes = "nc-si in sio2, interface energy, nc construction,
3701 angular distribution, coordination",
3705 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3706 W. Liang and J. Zou",
3708 title = "Nature of interfacial defects and their roles in
3709 strain relaxation at highly lattice mismatched
3710 3{C}-Si{C}/Si (001) interface",
3713 journal = "J. Appl. Phys.",
3719 keywords = "anelastic relaxation; crystal structure; dislocations;
3720 elemental semiconductors; semiconductor growth;
3721 semiconductor thin films; silicon; silicon compounds;
3722 stacking faults; wide band gap semiconductors",
3723 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3724 doi = "10.1063/1.3234380",
3725 notes = "sic/si interface, follow refs, tem image
3726 deconvolution, dislocation defects",
3729 @Article{kitabatake93,
3730 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3733 title = "Simulations and experiments of Si{C} heteroepitaxial
3734 growth on Si(001) surface",
3737 journal = "J. Appl. Phys.",
3740 pages = "4438--4445",
3741 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3742 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3743 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3744 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3745 doi = "10.1063/1.354385",
3746 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3750 @Article{kitabatake97,
3751 author = "Makoto Kitabatake",
3752 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3753 Heteroepitaxial Growth",
3754 publisher = "WILEY-VCH Verlag",
3756 journal = "phys. status solidi (b)",
3759 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3760 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3761 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3765 title = "Strain relaxation and thermal stability of the
3766 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3768 journal = "Thin Solid Films",
3775 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3776 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3777 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3778 keywords = "Strain relaxation",
3779 keywords = "Interfaces",
3780 keywords = "Thermal stability",
3781 keywords = "Molecular dynamics",
3782 notes = "tersoff sic/si interface study",
3786 title = "Ab initio Study of Misfit Dislocations at the
3787 $Si{C}/Si(001)$ Interface",
3788 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3790 journal = "Phys. Rev. Lett.",
3797 doi = "10.1103/PhysRevLett.89.156101",
3798 publisher = "American Physical Society",
3799 notes = "sic/si interface study",
3802 @Article{pizzagalli03,
3803 title = "Theoretical investigations of a highly mismatched
3804 interface: Si{C}/Si(001)",
3805 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3807 journal = "Phys. Rev. B",
3814 doi = "10.1103/PhysRevB.68.195302",
3815 publisher = "American Physical Society",
3816 notes = "tersoff md and ab initio sic/si interface study",
3820 title = "Atomic configurations of dislocation core and twin
3821 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3822 electron microscopy",
3823 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3824 H. Zheng and J. W. Liang",
3825 journal = "Phys. Rev. B",
3832 doi = "10.1103/PhysRevB.75.184103",
3833 publisher = "American Physical Society",
3834 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3838 @Article{hornstra58,
3839 title = "Dislocations in the diamond lattice",
3840 journal = "J. Phys. Chem. Solids",
3847 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3848 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3849 author = "J. Hornstra",
3850 notes = "dislocations in diamond lattice",
3854 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3855 Ion `Hot' Implantation",
3856 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3857 Hirao and Naoki Arai and Tomio Izumi",
3858 journal = "Japanese J. Appl. Phys.",
3860 number = "Part 1, No. 2A",
3864 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3865 doi = "10.1143/JJAP.31.343",
3866 publisher = "The Japan Society of Applied Physics",
3867 notes = "c-c bonds in c implanted si, hot implantation
3868 efficiency, c-c hard to break by thermal annealing",
3871 @Article{eichhorn99,
3872 author = "F. Eichhorn and N. Schell and W. Matz and R.
3875 title = "Strain and Si{C} particle formation in silicon
3876 implanted with carbon ions of medium fluence studied by
3877 synchrotron x-ray diffraction",
3880 journal = "J. Appl. Phys.",
3883 pages = "4184--4187",
3884 keywords = "silicon; carbon; elemental semiconductors; chemical
3885 interdiffusion; ion implantation; X-ray diffraction;
3886 precipitation; semiconductor doping",
3887 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3888 doi = "10.1063/1.371344",
3889 notes = "sic conversion by ibs, detected substitutional carbon,
3890 expansion of si lattice",
3893 @Article{eichhorn02,
3894 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3895 Metzger and W. Matz and R. K{\"{o}}gler",
3897 title = "Structural relation between Si and Si{C} formed by
3898 carbon ion implantation",
3901 journal = "J. Appl. Phys.",
3904 pages = "1287--1292",
3905 keywords = "silicon compounds; wide band gap semiconductors; ion
3906 implantation; annealing; X-ray scattering; transmission
3907 electron microscopy",
3908 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3909 doi = "10.1063/1.1428105",
3910 notes = "3c-sic alignement to si host in ibs depending on
3911 temperature, might explain c into c sub trafo",
3915 author = "G Lucas and M Bertolus and L Pizzagalli",
3916 title = "An environment-dependent interatomic potential for
3917 silicon carbide: calculation of bulk properties,
3918 high-pressure phases, point and extended defects, and
3919 amorphous structures",
3920 journal = "J. Phys.: Condens. Matter",
3924 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3930 author = "J Godet and L Pizzagalli and S Brochard and P
3932 title = "Comparison between classical potentials and ab initio
3933 methods for silicon under large shear",
3934 journal = "J. Phys.: Condens. Matter",
3938 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3940 notes = "comparison of empirical potentials, stillinger weber,
3941 edip, tersoff, ab initio",
3944 @Article{moriguchi98,
3945 title = "Verification of Tersoff's Potential for Static
3946 Structural Analysis of Solids of Group-{IV} Elements",
3947 author = "Koji Moriguchi and Akira Shintani",
3948 journal = "Japanese J. Appl. Phys.",
3950 number = "Part 1, No. 2",
3954 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3955 doi = "10.1143/JJAP.37.414",
3956 publisher = "The Japan Society of Applied Physics",
3957 notes = "tersoff stringent test",
3960 @Article{mazzarolo01,
3961 title = "Low-energy recoils in crystalline silicon: Quantum
3963 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3964 Lulli and Eros Albertazzi",
3965 journal = "Phys. Rev. B",
3972 doi = "10.1103/PhysRevB.63.195207",
3973 publisher = "American Physical Society",
3976 @Article{holmstroem08,
3977 title = "Threshold defect production in silicon determined by
3978 density functional theory molecular dynamics
3980 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3981 journal = "Phys. Rev. B",
3988 doi = "10.1103/PhysRevB.78.045202",
3989 publisher = "American Physical Society",
3990 notes = "threshold displacement comparison empirical and ab
3994 @Article{nordlund97,
3995 title = "Repulsive interatomic potentials calculated using
3996 Hartree-Fock and density-functional theory methods",
3997 journal = "Nucl. Instrum. Methods Phys. Res. B",
4004 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
4005 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
4006 author = "K. Nordlund and N. Runeberg and D. Sundholm",
4007 notes = "repulsive ab initio potential",
4011 title = "Efficiency of ab-initio total energy calculations for
4012 metals and semiconductors using a plane-wave basis
4014 journal = "Comput. Mater. Sci.",
4021 doi = "DOI: 10.1016/0927-0256(96)00008-0",
4022 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
4023 author = "G. Kresse and J. Furthm{\"{u}}ller",
4028 title = "Projector augmented-wave method",
4029 author = "P. E. Bl{\"o}chl",
4030 journal = "Phys. Rev. B",
4033 pages = "17953--17979",
4037 doi = "10.1103/PhysRevB.50.17953",
4038 publisher = "American Physical Society",
4039 notes = "paw method",
4042 @InCollection{cohen70,
4043 title = "The Fitting of Pseudopotentials to Experimental Data
4044 and Their Subsequent Application",
4045 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4046 publisher = "Academic Press",
4050 series = "Solid State Physics",
4052 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4053 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4054 author = "Marvin L. Cohen and Volker Heine",
4058 title = "Norm-Conserving Pseudopotentials",
4059 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4060 journal = "Phys. Rev. Lett.",
4063 pages = "1494--1497",
4067 doi = "10.1103/PhysRevLett.43.1494",
4068 publisher = "American Physical Society",
4069 notes = "norm-conserving pseudopotentials",
4072 @Article{troullier91,
4073 title = "Efficient pseudopotentials for plane-wave
4075 author = "N. Troullier and Jos\'e Luriaas Martins",
4076 journal = "Phys. Rev. B",
4079 pages = "1993--2006",
4083 doi = "10.1103/PhysRevB.43.1993",
4084 publisher = "American Physical Society",
4087 @Article{vanderbilt90,
4088 title = "Soft self-consistent pseudopotentials in a generalized
4089 eigenvalue formalism",
4090 author = "David Vanderbilt",
4091 journal = "Phys. Rev. B",
4094 pages = "7892--7895",
4098 doi = "10.1103/PhysRevB.41.7892",
4099 publisher = "American Physical Society",
4100 notes = "vasp pseudopotentials",
4103 @Article{ceperley80,
4104 title = "Ground State of the Electron Gas by a Stochastic
4106 author = "D. M. Ceperley and B. J. Alder",
4107 journal = "Phys. Rev. Lett.",
4114 doi = "10.1103/PhysRevLett.45.566",
4115 publisher = "American Physical Society",
4119 title = "Self-interaction correction to density-functional
4120 approximations for many-electron systems",
4121 author = "J. P. Perdew and Alex Zunger",
4122 journal = "Phys. Rev. B",
4125 pages = "5048--5079",
4129 doi = "10.1103/PhysRevB.23.5048",
4130 publisher = "American Physical Society",
4134 title = "Accurate and simple density functional for the
4135 electronic exchange energy: Generalized gradient
4137 author = "John P. Perdew and Yue Wang",
4138 journal = "Phys. Rev. B",
4141 pages = "8800--8802",
4145 doi = "10.1103/PhysRevB.33.8800",
4146 publisher = "American Physical Society",
4147 notes = "rapid communication gga",
4151 title = "Generalized gradient approximations for exchange and
4152 correlation: {A} look backward and forward",
4153 journal = "Physica B",
4160 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4161 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4162 author = "John P. Perdew",
4163 notes = "gga overview",
4167 title = "Atoms, molecules, solids, and surfaces: Applications
4168 of the generalized gradient approximation for exchange
4170 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4171 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4172 and Carlos Fiolhais",
4173 journal = "Phys. Rev. B",
4176 pages = "6671--6687",
4180 doi = "10.1103/PhysRevB.46.6671",
4181 publisher = "American Physical Society",
4182 notes = "gga pw91 (as in vasp)",
4186 title = "Special Points in the Brillouin Zone",
4187 author = "D. J. Chadi and Marvin L. Cohen",
4188 journal = "Phys. Rev. B",
4191 pages = "5747--5753",
4195 doi = "10.1103/PhysRevB.8.5747",
4196 publisher = "American Physical Society",
4199 @Article{baldereschi73,
4200 title = "Mean-Value Point in the Brillouin Zone",
4201 author = "A. Baldereschi",
4202 journal = "Phys. Rev. B",
4205 pages = "5212--5215",
4209 doi = "10.1103/PhysRevB.7.5212",
4210 publisher = "American Physical Society",
4211 notes = "mean value k point",
4214 @Article{monkhorst76,
4215 title = "Special points for Brillouin-zone integrations",
4216 author = "Hendrik J. Monkhorst and James D. Pack",
4217 journal = "Phys. Rev. B",
4220 pages = "5188--5192",
4224 doi = "10.1103/PhysRevB.13.5188",
4225 publisher = "American Physical Society",
4229 title = "Ab initio pseudopotential calculations of dopant
4231 journal = "Comput. Mater. Sci.",
4238 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4239 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4240 author = "Jing Zhu",
4241 keywords = "TED (transient enhanced diffusion)",
4242 keywords = "Boron dopant",
4243 keywords = "Carbon dopant",
4244 keywords = "Defect",
4245 keywords = "ab initio pseudopotential method",
4246 keywords = "Impurity cluster",
4247 notes = "binding of c to si interstitial, c in si defects",
4251 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4253 title = "Si{C} buried layer formation by ion beam synthesis at
4257 journal = "Appl. Phys. Lett.",
4260 pages = "2646--2648",
4261 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4262 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4263 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4264 ELECTRON MICROSCOPY",
4265 URL = "http://link.aip.org/link/?APL/66/2646/1",
4266 doi = "10.1063/1.113112",
4267 notes = "precipitation mechanism by substitutional carbon, si
4268 self interstitials react with further implanted c",
4272 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4273 Kolodzey and A. Hairie",
4275 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4279 journal = "J. Appl. Phys.",
4282 pages = "4631--4633",
4283 keywords = "silicon compounds; precipitation; localised modes;
4284 semiconductor epitaxial layers; infrared spectra;
4285 Fourier transform spectra; thermal stability;
4287 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4288 doi = "10.1063/1.368703",
4289 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4293 author = "R Jones and B J Coomer and P R Briddon",
4294 title = "Quantum mechanical modelling of defects in
4296 journal = "J. Phys.: Condens. Matter",
4300 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4302 notes = "ab inito dft intro, vibrational modes, c defect in
4307 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4308 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4309 J. E. Greene and S. G. Bishop",
4311 title = "Carbon incorporation pathways and lattice sites in
4312 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4313 molecular-beam epitaxy",
4316 journal = "J. Appl. Phys.",
4319 pages = "5716--5727",
4320 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4321 doi = "10.1063/1.1465122",
4322 notes = "c substitutional incorporation pathway, dft and expt",
4326 title = "Dynamic properties of interstitial carbon and
4327 carbon-carbon pair defects in silicon",
4328 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4330 journal = "Phys. Rev. B",
4333 pages = "2188--2194",
4337 doi = "10.1103/PhysRevB.55.2188",
4338 publisher = "American Physical Society",
4339 notes = "ab initio c in si and di-carbon defect, no formation
4340 energies, different migration barriers and paths",
4344 title = "Interstitial carbon and the carbon-carbon pair in
4345 silicon: Semiempirical electronic-structure
4347 author = "Matthew J. Burnard and Gary G. DeLeo",
4348 journal = "Phys. Rev. B",
4351 pages = "10217--10225",
4355 doi = "10.1103/PhysRevB.47.10217",
4356 publisher = "American Physical Society",
4357 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4358 carbon defect, formation energies",
4362 title = "Electronic structure of interstitial carbon in
4364 author = "Morgan Besson and Gary G. DeLeo",
4365 journal = "Phys. Rev. B",
4368 pages = "4028--4033",
4372 doi = "10.1103/PhysRevB.43.4028",
4373 publisher = "American Physical Society",
4377 title = "Review of atomistic simulations of surface diffusion
4378 and growth on semiconductors",
4379 journal = "Comput. Mater. Sci.",
4384 note = "Proceedings of the Workshop on Virtual Molecular Beam
4387 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4388 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4389 author = "Efthimios Kaxiras",
4390 notes = "might contain c 100 db formation energy, overview md,
4391 tight binding, first principles",
4394 @Article{kaukonen98,
4395 title = "Effect of {N} and {B} doping on the growth of {CVD}
4397 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4399 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4400 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4402 journal = "Phys. Rev. B",
4405 pages = "9965--9970",
4409 doi = "10.1103/PhysRevB.57.9965",
4410 publisher = "American Physical Society",
4411 notes = "constrained conjugate gradient relaxation technique
4416 title = "Correlation between the antisite pair and the ${DI}$
4418 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4419 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4421 journal = "Phys. Rev. B",
4428 doi = "10.1103/PhysRevB.67.155203",
4429 publisher = "American Physical Society",
4433 title = "Production and recovery of defects in Si{C} after
4434 irradiation and deformation",
4435 journal = "J. Nucl. Mater.",
4438 pages = "1803--1808",
4442 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4443 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4444 author = "J. Chen and P. Jung and H. Klein",
4448 title = "Accumulation, dynamic annealing and thermal recovery
4449 of ion-beam-induced disorder in silicon carbide",
4450 journal = "Nucl. Instrum. Methods Phys. Res. B",
4457 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4458 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4459 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4462 @Article{bockstedte03,
4463 title = "Ab initio study of the migration of intrinsic defects
4465 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4467 journal = "Phys. Rev. B",
4474 doi = "10.1103/PhysRevB.68.205201",
4475 publisher = "American Physical Society",
4476 notes = "defect migration in sic",
4480 title = "Theoretical study of vacancy diffusion and
4481 vacancy-assisted clustering of antisites in Si{C}",
4482 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4484 journal = "Phys. Rev. B",
4491 doi = "10.1103/PhysRevB.68.155208",
4492 publisher = "American Physical Society",
4496 journal = "Telegrafiya i Telefoniya bez Provodov",
4500 author = "O. V. Lossev",
4504 title = "Luminous carborundum detector and detection effect and
4505 oscillations with crystals",
4506 journal = "Philos. Mag. Series 7",
4509 pages = "1024--1044",
4511 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4512 author = "O. V. Lossev",
4516 journal = "Physik. Zeitschr.",
4520 author = "O. V. Lossev",
4524 journal = "Physik. Zeitschr.",
4528 author = "O. V. Lossev",
4532 journal = "Physik. Zeitschr.",
4536 author = "O. V. Lossev",
4540 title = "A note on carborundum",
4541 journal = "Electrical World",
4545 author = "H. J. Round",
4548 @Article{vashishath08,
4549 title = "Recent trends in silicon carbide device research",
4550 journal = "Mj. Int. J. Sci. Tech.",
4555 author = "Munish Vashishath and Ashoke K. Chatterjee",
4556 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4557 notes = "sic polytype electronic properties",
4561 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4563 title = "Growth and Properties of beta-Si{C} Single Crystals",
4566 journal = "J. Appl. Phys.",
4570 URL = "http://link.aip.org/link/?JAP/37/333/1",
4571 doi = "10.1063/1.1707837",
4572 notes = "sic melt growth",
4576 author = "A. E. van Arkel and J. H. de Boer",
4577 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4579 publisher = "WILEY-VCH Verlag GmbH",
4581 journal = "Z. Anorg. Chem.",
4584 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4585 doi = "10.1002/zaac.19251480133",
4586 notes = "van arkel apparatus",
4590 author = "K. Moers",
4592 journal = "Z. Anorg. Chem.",
4595 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4600 author = "J. T. Kendall",
4601 title = "Electronic Conduction in Silicon Carbide",
4604 journal = "J. Chem. Phys.",
4608 URL = "http://link.aip.org/link/?JCP/21/821/1",
4609 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4614 author = "J. A. Lely",
4616 journal = "Ber. Deut. Keram. Ges.",
4619 notes = "lely sublimation growth process",
4622 @Article{knippenberg63,
4623 author = "W. F. Knippenberg",
4625 journal = "Philips Res. Repts.",
4628 notes = "acheson process",
4631 @Article{hoffmann82,
4632 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4635 title = "Silicon carbide blue light emitting diodes with
4636 improved external quantum efficiency",
4639 journal = "J. Appl. Phys.",
4642 pages = "6962--6967",
4643 keywords = "light emitting diodes; silicon carbides; quantum
4644 efficiency; visible radiation; experimental data;
4645 epitaxy; fabrication; medium temperature; layers;
4646 aluminium; nitrogen; substrates; pn junctions;
4647 electroluminescence; spectra; current density;
4649 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4650 doi = "10.1063/1.330041",
4651 notes = "blue led, sublimation process",
4655 author = "Philip Neudeck",
4656 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4657 Road 44135 Cleveland OH",
4658 title = "Progress in silicon carbide semiconductor electronics
4660 journal = "J. Electron. Mater.",
4661 publisher = "Springer Boston",
4663 keyword = "Chemistry and Materials Science",
4667 URL = "http://dx.doi.org/10.1007/BF02659688",
4668 note = "10.1007/BF02659688",
4670 notes = "sic data, advantages of 3c sic",
4673 @InProceedings{pribble02,
4674 author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
4675 R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
4676 and J. J. Sumakeris and A. W. Saxler and J. W.
4678 booktitle = "2002 IEEE MTT-S International Microwave Symposium
4680 title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
4681 power amplifier design",
4686 pages = "1819--1822",
4687 doi = "10.1109/MWSYM.2002.1012216",
4692 @InProceedings{temcamani01,
4693 author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
4694 Brylinski and P. Bannelier and B. Darges and J. P.
4696 booktitle = "2001 IEEE MTT-S International Microwave Symposium
4698 title = "Silicon carbide {MESFET}s performances and application
4699 in broadcast power amplifiers",
4705 doi = "10.1109/MWSYM.2001.966976",
4711 author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
4712 and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
4713 Kimoto and Hiroyuki Matsunami",
4714 title = "Traps at the Si{C}/Si{O2}-Interface",
4715 journal = "MRS Proc.",
4720 doi = "10.1557/PROC-640-H3.2",
4721 URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
4724 @Article{bhatnagar93,
4725 author = "M. Bhatnagar and B. J. Baliga",
4726 journal = "IEEE Trans. Electron Devices",
4727 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4734 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4735 rectifiers;Si;SiC;breakdown voltages;drift region
4736 properties;output characteristics;power MOSFETs;power
4737 semiconductor devices;switching characteristics;thermal
4738 analysis;Schottky-barrier diodes;electric breakdown of
4739 solids;insulated gate field effect transistors;power
4740 transistors;semiconductor materials;silicon;silicon
4741 compounds;solid-state rectifiers;thermal analysis;",
4742 doi = "10.1109/16.199372",
4744 notes = "comparison 3c 6h sic and si devices",
4748 author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W.
4750 journal = "IEEE Electron Device Lett.",
4751 title = "1800 {V} {NPN} bipolar junction transistors in
4758 keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction
4759 transistor;SiC;blocking voltage;current gain;deep level
4760 acceptor;minority carrier lifetime;on-resistance;power
4761 switching device;temperature coefficient;carrier
4762 lifetime;deep levels;minority carriers;power bipolar
4763 transistors;silicon compounds;wide band gap
4765 doi = "10.1109/55.910617",
4770 author = "B. J. Baliga",
4771 journal = "IEEE Trans. Electron Devices",
4772 title = "Trends in power semiconductor devices",
4777 pages = "1717--1731",
4778 keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated
4779 devices;MOS-gated thyristors;MPS rectifier;PIN
4780 rectifier;Schottky rectifier;Si;SiC;SiC based
4781 switches;TMBS rectifier;UMOS technology;VMOS
4782 technology;bipolar power transistor;high voltage power
4783 rectifiers;low voltage power rectifiers;power
4784 MOSFET;power losses;power semiconductor devices;power
4785 switch technology;review;semiconductor device
4786 technology;MOS-controlled thyristors;bipolar transistor
4787 switches;field effect transistor switches;gallium
4788 arsenide;insulated gate bipolar transistors;p-i-n
4789 diodes;power bipolar transistors;power field effect
4790 transistors;power semiconductor devices;power
4791 semiconductor diodes;power semiconductor
4792 switches;reviews;silicon;silicon compounds;solid-state
4793 rectifiers;thyristors;",
4794 doi = "10.1109/16.536818",
4798 @Article{bhatnagar92,
4799 author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga",
4800 journal = "IEEE Electron Device Lett.",
4801 title = "Silicon-carbide high-voltage (400 {V}) Schottky
4808 keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier
4810 voltages;characteristics;fabrication;forward I-V
4811 characteristics;forward voltage drop;on-state current
4812 density;rectifiers;reverse I-V characteristics;reverse
4813 recovery characteristics;sharp breakdown;temperature
4814 range;Schottky-barrier diodes;platinum;power
4815 electronics;semiconductor materials;silicon
4816 compounds;solid-state rectifiers;",
4817 doi = "10.1109/55.192814",
4822 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4823 A. Powell and C. S. Salupo and L. G. Matus",
4824 journal = "IEEE Trans. Electron Devices",
4825 title = "Electrical properties of epitaxial 3{C}- and
4826 6{H}-Si{C} p-n junction diodes produced side-by-side on
4827 6{H}-Si{C} substrates",
4833 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4834 C;6H-SiC layers;6H-SiC substrates;CVD
4835 process;SiC;chemical vapor deposition;doping;electrical
4836 properties;epitaxial layers;light
4837 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4838 diodes;polytype;rectification characteristics;reverse
4839 leakage current;reverse voltages;temperature;leakage
4840 currents;power electronics;semiconductor
4841 diodes;semiconductor epitaxial layers;semiconductor
4842 growth;semiconductor materials;silicon
4843 compounds;solid-state rectifiers;substrates;vapour
4844 phase epitaxial growth;",
4845 doi = "10.1109/16.285038",
4847 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4852 author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
4853 and K. Moore and K. K. Nordquist and S. Allen and C.
4854 Thero and M. Bhatnagar",
4855 journal = "IEEE Trans. Electron Devices",
4856 title = "Silicon carbide high-power devices",
4861 pages = "1732--1741",
4862 keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
4863 barrier diodes;SiC;SiC devices;UMOSFET;current
4864 density;high electric breakdown field;high saturated
4865 electron drift velocity;high thermal
4866 conductivity;high-power devices;packaged SIT;submicron
4867 gate length MESFET;Schottky diodes;current
4868 density;electric breakdown;power MESFET;power
4869 MOSFET;power semiconductor devices;power semiconductor
4870 diodes;reviews;silicon compounds;static induction
4871 transistors;wide band gap semiconductors;",
4872 doi = "10.1109/16.536819",
4874 notes = "high power devices",
4878 author = "Lin Zhu and T. P. Chow",
4879 journal = "IEEE Trans. Electron Devices",
4880 title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
4885 pages = "1871--1874",
4886 keywords = "H-SiC;OFF-state characteristics;ON-state
4887 characteristics;blocking capability;high-voltage
4888 Schottky rectifier;junction barrier Schottky
4889 rectifier;lateral channel JBS rectifier;leakage
4890 current;pinlike reverse characteristics;Schottky
4891 barriers;Schottky diodes;leakage currents;rectifying
4893 doi = "10.1109/TED.2008.926642",
4898 author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
4899 Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
4900 and G. Gati and J. M. Pimbley and W. E. Schneider",
4901 journal = "IEEE Trans. Electron Devices",
4902 title = "Silicon carbide {UV} photodiodes",
4908 keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
4909 responsivity characteristics;low dark current;low light
4910 level UV detection;quantum
4911 efficiency;reproducibility;reverse current
4912 leakage;short circuit output current;leakage
4913 currents;photodiodes;semiconductor
4914 materials;short-circuit currents;silicon
4915 compounds;ultraviolet detectors;",
4916 doi = "10.1109/16.182509",
4918 notes = "sic photo diodes, uv detector",
4922 author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
4923 and D. Franz and J. H. Zhao and M. Weiner",
4924 journal = "IEEE J. Quantum Electron.",
4925 title = "4{H}-Si{C} {UV} photo detectors with large area and
4926 very high specific detectivity",
4931 pages = "1315--1320",
4932 keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
4933 photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
4934 SiC-Pt; leakage current; photoresponse spectra; quantum
4935 efficiency; specific detectivity; Schottky diodes;
4936 photodetectors; platinum; silicon compounds; wide band
4937 gap semiconductors;",
4938 doi = "10.1109/JQE.2004.833196",
4940 notes = "uv detector",
4944 author = "N. Schulze and D. L. Barrett and G. Pensl",
4946 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4947 single crystals by physical vapor transport",
4950 journal = "Appl. Phys. Lett.",
4953 pages = "1632--1634",
4954 keywords = "silicon compounds; semiconductor materials;
4955 semiconductor growth; crystal growth from vapour;
4956 photoluminescence; Hall mobility",
4957 URL = "http://link.aip.org/link/?APL/72/1632/1",
4958 doi = "10.1063/1.121136",
4959 notes = "micropipe free 6h-sic pvt growth",
4963 author = "F. C. Frank",
4964 title = "Capillary equilibria of dislocated crystals",
4965 journal = "Acta Crystallogr.",
4971 doi = "10.1107/S0365110X51001690",
4972 URL = "http://dx.doi.org/10.1107/S0365110X51001690",
4973 notes = "micropipe",
4977 author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G.
4979 title = "Micropipes: Hollow Tubes in Silicon Carbide",
4980 journal = "phys. status solidi (a)",
4983 publisher = "WILEY-VCH Verlag",
4985 URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
4986 doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
4989 notes = "micropipe",
4992 @Article{neudeck94_2,
4993 author = "P. G. Neudeck and J. A. Powell",
4994 journal = "IEEE Electron Device Lett.",
4995 title = "Performance limiting micropipe defects in silicon
5002 keywords = "SiC;defect density;device ratings;epitaxially-grown pn
5003 junction devices;micropipe defects;power devices;power
5004 semiconductors;pre-avalanche reverse-bias point
5005 failures;p-n homojunctions;power
5006 electronics;semiconductor materials;silicon
5008 doi = "10.1109/55.285372",
5013 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
5015 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
5018 journal = "Appl. Phys. Lett.",
5022 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
5023 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
5024 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
5025 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
5027 URL = "http://link.aip.org/link/?APL/50/221/1",
5028 doi = "10.1063/1.97667",
5029 notes = "apb 3c-sic heteroepitaxy on si",
5032 @Article{shibahara86,
5033 title = "Surface morphology of cubic Si{C}(100) grown on
5034 Si(100) by chemical vapor deposition",
5035 journal = "J. Cryst. Growth",
5042 doi = "DOI: 10.1016/0022-0248(86)90158-2",
5043 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
5044 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
5046 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
5049 @Article{desjardins96,
5050 author = "P. Desjardins and J. E. Greene",
5052 title = "Step-flow epitaxial growth on two-domain surfaces",
5055 journal = "J. Appl. Phys.",
5058 pages = "1423--1434",
5059 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
5060 FILM GROWTH; SURFACE STRUCTURE",
5061 URL = "http://link.aip.org/link/?JAP/79/1423/1",
5062 doi = "10.1063/1.360980",
5063 notes = "apb model",
5067 author = "S. Henke and B. Stritzker and B. Rauschenbach",
5069 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
5070 carbonization of silicon",
5073 journal = "J. Appl. Phys.",
5076 pages = "2070--2073",
5077 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
5078 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
5080 URL = "http://link.aip.org/link/?JAP/78/2070/1",
5081 doi = "10.1063/1.360184",
5082 notes = "ssmbe of sic on si, lower temperatures",
5086 title = "Atomic layer epitaxy of cubic Si{C} by gas source
5087 {MBE} using surface superstructure",
5088 journal = "J. Cryst. Growth",
5095 doi = "DOI: 10.1016/0022-0248(89)90442-9",
5096 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
5097 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
5098 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
5099 notes = "gas source mbe of 3c-sic on 6h-sic",
5102 @Article{yoshinobu92,
5103 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
5104 and Takashi Fuyuki and Hiroyuki Matsunami",
5106 title = "Lattice-matched epitaxial growth of single crystalline
5107 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
5108 molecular beam epitaxy",
5111 journal = "Appl. Phys. Lett.",
5115 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
5116 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
5117 INTERFACE STRUCTURE",
5118 URL = "http://link.aip.org/link/?APL/60/824/1",
5119 doi = "10.1063/1.107430",
5120 notes = "gas source mbe of 3c-sic on 6h-sic",
5123 @Article{yoshinobu90,
5124 title = "Atomic level control in gas source {MBE} growth of
5126 journal = "J. Cryst. Growth",
5133 doi = "DOI: 10.1016/0022-0248(90)90575-6",
5134 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
5135 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
5136 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
5137 notes = "gas source mbe of 3c-sic on 3c-sic",
5141 title = "Atomic layer epitaxy controlled by surface
5142 superstructures in Si{C}",
5143 journal = "Thin Solid Films",
5150 doi = "DOI: 10.1016/0040-6090(93)90159-M",
5151 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
5152 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
5154 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
5159 title = "Microscopic mechanisms of accurate layer-by-layer
5160 growth of [beta]-Si{C}",
5161 journal = "Thin Solid Films",
5168 doi = "DOI: 10.1016/0040-6090(93)90162-I",
5169 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
5170 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
5171 and S. Misawa and E. Sakuma and S. Yoshida",
5172 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
5177 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
5179 title = "Effects of gas flow ratio on silicon carbide thin film
5180 growth mode and polytype formation during gas-source
5181 molecular beam epitaxy",
5184 journal = "Appl. Phys. Lett.",
5187 pages = "2851--2853",
5188 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
5189 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
5190 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
5192 URL = "http://link.aip.org/link/?APL/65/2851/1",
5193 doi = "10.1063/1.112513",
5194 notes = "gas source mbe of 6h-sic on 6h-sic",
5198 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
5199 title = "Heterointerface Control and Epitaxial Growth of
5200 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
5201 publisher = "WILEY-VCH Verlag",
5203 journal = "phys. status solidi (b)",
5206 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
5211 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
5212 journal = "J. Cryst. Growth",
5219 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
5220 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
5221 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
5222 keywords = "Reflection high-energy electron diffraction (RHEED)",
5223 keywords = "Scanning electron microscopy (SEM)",
5224 keywords = "Silicon carbide",
5225 keywords = "Silicon",
5226 keywords = "Island growth",
5227 notes = "lower temperature, 550-700",
5230 @Article{hatayama95,
5231 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
5232 on Si using hydrocarbon radicals by gas source
5233 molecular beam epitaxy",
5234 journal = "J. Cryst. Growth",
5241 doi = "DOI: 10.1016/0022-0248(95)80077-P",
5242 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
5243 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
5244 and Hiroyuki Matsunami",
5248 author = "Volker Heine and Ching Cheng and Richard J. Needs",
5249 title = "The Preference of Silicon Carbide for Growth in the
5250 Metastable Cubic Form",
5251 journal = "J. Am. Ceram. Soc.",
5254 publisher = "Blackwell Publishing Ltd",
5256 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
5257 doi = "10.1111/j.1151-2916.1991.tb06811.x",
5258 pages = "2630--2633",
5259 keywords = "silicon carbide, crystal growth, crystal structure,
5260 calculations, stability",
5262 notes = "3c-sic metastable, 3c-sic preferred growth, sic
5263 polytype dft calculation refs",
5266 @Article{allendorf91,
5267 title = "The adsorption of {H}-atoms on polycrystalline
5268 [beta]-silicon carbide",
5269 journal = "Surf. Sci.",
5276 doi = "DOI: 10.1016/0039-6028(91)90912-C",
5277 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
5278 author = "Mark D. Allendorf and Duane A. Outka",
5279 notes = "h adsorption on 3c-sic",
5282 @Article{eaglesham93,
5283 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
5284 D. P. Adams and S. M. Yalisove",
5286 title = "Effect of {H} on Si molecular-beam epitaxy",
5289 journal = "J. Appl. Phys.",
5292 pages = "6615--6618",
5293 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
5294 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
5295 DIFFUSION; ADSORPTION",
5296 URL = "http://link.aip.org/link/?JAP/74/6615/1",
5297 doi = "10.1063/1.355101",
5298 notes = "h incorporation on si surface, lower surface
5303 author = "Ronald C. Newman",
5304 title = "Carbon in Crystalline Silicon",
5305 journal = "MRS Proc.",
5310 doi = "10.1557/PROC-59-403",
5311 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5312 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5316 title = "The diffusivity of carbon in silicon",
5317 journal = "J. Phys. Chem. Solids",
5324 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5325 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5326 author = "R. C. Newman and J. Wakefield",
5327 notes = "diffusivity of substitutional c in si",
5331 author = "U. Gösele",
5332 title = "The Role of Carbon and Point Defects in Silicon",
5333 journal = "MRS Proc.",
5338 doi = "10.1557/PROC-59-419",
5339 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5340 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5343 @Article{mukashev82,
5344 title = "Defects in Carbon-Implanted Silicon",
5345 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5346 Fukuoka and Haruo Saito",
5347 journal = "Japanese J. Appl. Phys.",
5349 number = "Part 1, No. 2",
5353 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5354 doi = "10.1143/JJAP.21.399",
5355 publisher = "The Japan Society of Applied Physics",
5359 title = "Convergence of supercell calculations for point
5360 defects in semiconductors: Vacancy in silicon",
5361 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5363 journal = "Phys. Rev. B",
5366 pages = "1318--1325",
5370 doi = "10.1103/PhysRevB.58.1318",
5371 publisher = "American Physical Society",
5372 notes = "convergence k point supercell size, vacancy in
5377 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5378 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5379 K{\"{o}}gler and W. Skorupa",
5381 title = "Spectroscopic characterization of phases formed by
5382 high-dose carbon ion implantation in silicon",
5385 journal = "J. Appl. Phys.",
5388 pages = "2978--2984",
5389 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5390 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5391 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5392 DEPENDENCE; PRECIPITATES; ANNEALING",
5393 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5394 doi = "10.1063/1.358714",
5397 @Article{romano-rodriguez96,
5398 title = "Detailed analysis of [beta]-Si{C} formation by high
5399 dose carbon ion implantation in silicon",
5400 journal = "Materials Science and Engineering B",
5405 note = "European Materials Research Society 1995 Spring
5406 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5407 Oxygen in Silicon and in Other Elemental
5410 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5411 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5412 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5413 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5415 keywords = "Silicon",
5416 keywords = "Ion implantation",
5417 notes = "incoherent 3c-sic precipitate",
5420 @Article{davidson75,
5421 title = "The iterative calculation of a few of the lowest
5422 eigenvalues and corresponding eigenvectors of large
5423 real-symmetric matrices",
5424 journal = "J. Comput. Phys.",
5431 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5432 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5433 author = "Ernest R. Davidson",
5437 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5439 author = "T. W. Adorno",
5440 ISBN = "978-3-518-01236-9",
5441 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5443 publisher = "Suhrkamp",
5446 @Misc{attenberger03,
5447 author = "Wilfried Attenberger and Jörg Lindner and Bernd
5449 title = "A {method} {for} {forming} {a} {layered}
5450 {semiconductor} {structure} {and} {corresponding}
5455 note = "WO 2003/034484 A3R4",
5457 howpublished = "Patent Application",
5459 filing_num = "EP0211423",
5464 ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
5465 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
5466 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
5468 abstract = "The following invention provides a method for forming
5469 a layered semiconductor structure having a layer (5) of
5470 a first semiconductor material on a substrate (1; 1')
5471 of at least one second semiconductor material,
5472 comprising the steps of: providing said substrate (1;
5473 1'); burying said layer (5) of said first semiconductor
5474 material in said substrate (1; 1'), said buried layer
5475 (5) having an upper surface (105) and a lower surface
5476 (105) and dividing said substrate (1; 1') into an upper
5477 part (1a) and a lower part (1b; 1b', 1c); creating a
5478 buried damage layer (10; 10'; 10'', 100'') which at
5479 least partly adjoins and/or at least partly includes
5480 said upper surface (105) of said buried layer (5); and
5481 removing said upper part (1a) of said substrate (1; 1')
5482 and said buried damage layer (10; 10'; 10'', 100'') for
5483 exposing said buried layer (5). The invention also
5484 provides a corresponding layered semiconductor