2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "M. A. Capano and R. J. Trew",
45 title = "Silicon Carbide Electronic Materials and Devices",
46 journal = "MRS Bull.",
53 author = "P. S. de Laplace",
54 title = "Th\'eorie analytique des probabilit\'es",
55 series = "Oeuvres Compl\`etes de Laplace",
57 publisher = "Gauthier-Villars",
62 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
63 title = "{Atomistic modeling of brittleness in covalent
65 journal = "Phys. Rev. B",
71 doi = "10.1103/PhysRevB.76.224103",
72 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
73 longe(r)-range-interactions, brittle propagation of
74 fracture, more available potentials, universal energy
75 relation (uer), minimum range model (mrm)",
79 title = "Stress relaxation in $a-Si$ induced by ion
81 author = "H. M. Urbassek M. Koster",
82 journal = "Phys. Rev. B",
85 pages = "11219--11224",
89 doi = "10.1103/PhysRevB.62.11219",
90 publisher = "American Physical Society",
91 notes = "virial derivation for 3-body tersoff potential",
95 title = "Direct simulation of ion-beam-induced stressing and
96 amorphization of silicon",
97 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
98 journal = "Phys. Rev. B",
101 pages = "12610--12616",
105 doi = "10.1103/PhysRevB.60.12610",
106 publisher = "American Physical Society",
107 notes = "virial derivation for 3-body tersoff potential",
111 author = "Y. S. Park",
112 title = "Si{C} Materials and Devices",
113 publisher = "Academic Press",
114 address = "San Diego",
119 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
120 Calvin H. Carter Jr. and D. Asbury",
121 title = "Si{C} Seeded Boule Growth",
122 journal = "Materials Science Forum",
126 notes = "modified lely process, micropipes",
130 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
131 Thermodynamical Properties of Lennard-Jones Molecules",
132 author = "Loup Verlet",
133 journal = "Phys. Rev.",
139 doi = "10.1103/PhysRev.159.98",
140 publisher = "American Physical Society",
141 notes = "velocity verlet integration algorithm equation of
145 @Article{berendsen84,
146 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
147 Gunsteren and A. DiNola and J. R. Haak",
149 title = "Molecular dynamics with coupling to an external bath",
152 journal = "The Journal of Chemical Physics",
155 pages = "3684--3690",
156 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
157 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
158 URL = "http://link.aip.org/link/?JCP/81/3684/1",
159 doi = "10.1063/1.448118",
160 notes = "berendsen thermostat barostat",
164 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
166 title = "Molecular dynamics determination of defect energetics
167 in beta -Si{C} using three representative empirical
169 journal = "Modelling and Simulation in Materials Science and
174 URL = "http://stacks.iop.org/0965-0393/3/615",
175 notes = "comparison of tersoff, pearson and eam for defect
176 energetics in sic; (m)eam parameters for sic",
181 title = "Relationship between the embedded-atom method and
183 author = "Donald W. Brenner",
184 journal = "Phys. Rev. Lett.",
191 doi = "10.1103/PhysRevLett.63.1022",
192 publisher = "American Physical Society",
193 notes = "relation of tersoff and eam potential",
197 title = "Molecular-dynamics study of self-interstitials in
199 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
200 journal = "Phys. Rev. B",
203 pages = "9552--9558",
207 doi = "10.1103/PhysRevB.35.9552",
208 publisher = "American Physical Society",
209 notes = "selft-interstitials in silicon, stillinger-weber,
210 calculation of defect formation energy, defect
215 title = "Extended interstitials in silicon and germanium",
216 author = "H. R. Schober",
217 journal = "Phys. Rev. B",
220 pages = "13013--13015",
224 doi = "10.1103/PhysRevB.39.13013",
225 publisher = "American Physical Society",
226 notes = "stillinger-weber silicon 110 stable and metastable
227 dumbbell configuration",
231 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
232 Defect accumulation, topological features, and
234 author = "F. Gao and W. J. Weber",
235 journal = "Phys. Rev. B",
242 doi = "10.1103/PhysRevB.66.024106",
243 publisher = "American Physical Society",
244 notes = "sic intro, si cascade in 3c-sic, amorphization,
245 tersoff modified, pair correlation of amorphous sic, md
249 @Article{devanathan98,
250 title = "Computer simulation of a 10 ke{V} Si displacement
252 journal = "Nuclear Instruments and Methods in Physics Research
253 Section B: Beam Interactions with Materials and Atoms",
259 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
260 author = "R. Devanathan and W. J. Weber and T. Diaz de la
262 notes = "modified tersoff short range potential, ab initio
266 @Article{devanathan98_2,
267 title = "Displacement threshold energies in [beta]-Si{C}",
268 journal = "Journal of Nuclear Materials",
274 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
275 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
277 notes = "modified tersoff, ab initio, combined ab initio
282 title = "Si{C}/Si heteroepitaxial growth",
283 author = "M. Kitabatake",
284 journal = "Thin Solid Films",
289 notes = "md simulation, sic si heteroepitaxy, mbe",
293 title = "Intrinsic point defects in crystalline silicon:
294 Tight-binding molecular dynamics studies of
295 self-diffusion, interstitial-vacancy recombination, and
297 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
299 journal = "Phys. Rev. B",
302 pages = "14279--14289",
306 doi = "10.1103/PhysRevB.55.14279",
307 publisher = "American Physical Society",
308 notes = "si self interstitial, diffusion, tbmd",
312 title = "Tight-binding theory of native point defects in
314 author = "L. Colombo",
315 journal = "Annu. Rev. Mater. Res.",
320 doi = "10.1146/annurev.matsci.32.111601.103036",
321 publisher = "Annual Reviews",
322 notes = "si self interstitial, tbmd, virial stress",
326 title = "Ab initio and empirical-potential studies of defect
327 properties in $3{C}-Si{C}$",
328 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
330 journal = "Phys. Rev. B",
337 doi = "10.1103/PhysRevB.64.245208",
338 publisher = "American Physical Society",
339 notes = "defects in 3c-sic",
342 @Article{mattoni2002,
343 title = "Self-interstitial trapping by carbon complexes in
344 crystalline silicon",
345 author = "A. Mattoni and F. Bernardini and L. Colombo",
346 journal = "Phys. Rev. B",
353 doi = "10.1103/PhysRevB.66.195214",
354 publisher = "American Physical Society",
355 notes = "c in c-si, diffusion, interstitial configuration +
360 title = "Calculations of Silicon Self-Interstitial Defects",
361 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
363 journal = "Phys. Rev. Lett.",
366 pages = "2351--2354",
370 doi = "10.1103/PhysRevLett.83.2351",
371 publisher = "American Physical Society",
372 notes = "nice images of the defects",
376 title = "Identification of the migration path of interstitial
378 author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
379 journal = "Phys. Rev. B",
382 pages = "7439--7442",
386 doi = "10.1103/PhysRevB.50.7439",
387 publisher = "American Physical Society",
388 notes = "carbon interstitial migration path shown, 001 c-si
393 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
395 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
396 Sokrates T. Pantelides",
397 journal = "Phys. Rev. Lett.",
400 pages = "1814--1817",
404 doi = "10.1103/PhysRevLett.52.1814",
405 publisher = "American Physical Society",
406 notes = "microscopic theory diffusion silicon dft migration
411 title = "Short-range order, bulk moduli, and physical trends in
412 c-$Si1-x$$Cx$ alloys",
413 author = "P. C. Kelires",
414 journal = "Phys. Rev. B",
417 pages = "8784--8787",
421 doi = "10.1103/PhysRevB.55.8784",
422 publisher = "American Physical Society",
423 notes = "c strained si, montecarlo md, bulk moduli, next
428 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
429 Application to the $Si1-x-yGexCy$ System",
430 author = "P. C. Kelires",
431 journal = "Phys. Rev. Lett.",
434 pages = "1114--1117",
438 doi = "10.1103/PhysRevLett.75.1114",
439 publisher = "American Physical Society",
440 notes = "mc md, strain compensation in si ge by c insertion",
444 title = "{EPR} Observation of the Isolated Interstitial Carbon
446 author = "G. D. Watkins and K. L. Brower",
447 journal = "Phys. Rev. Lett.",
450 pages = "1329--1332",
454 doi = "10.1103/PhysRevLett.36.1329",
455 publisher = "American Physical Society",
456 notes = "epr observations of 100 interstitial carbon atom in
461 title = "{EPR} identification of the single-acceptor state of
462 interstitial carbon in silicon",
463 author = "G. D. Watkins L. W. Song",
464 journal = "Phys. Rev. B",
467 pages = "5759--5764",
471 doi = "10.1103/PhysRevB.42.5759",
472 publisher = "American Physical Society",
476 title = "Carbon incorporation into Si at high concentrations by
477 ion implantation and solid phase epitaxy",
478 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
479 Picraux and J. K. Watanabe and J. W. Mayer",
480 journal = "J. Appl. Phys.",
485 doi = "10.1063/1.360806",
486 notes = "strained silicon, carbon supersaturation",
489 @Article{laveant2002,
490 title = "Epitaxy of carbon-rich silicon with {MBE}",
491 author = "P. Laveant and G. Gerth and P. Werner and U.
493 journal = "Materials Science and Engineering B",
497 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
498 notes = "low c in si, tensile stress to compensate compressive
499 stress, avoid sic precipitation",
503 author = "P. Werner and S. Eichler and G. Mariani and R.
504 K{\"{o}}gler and W. Skorupa",
505 title = "Investigation of {C}[sub x]Si defects in {C} implanted
506 silicon by transmission electron microscopy",
509 journal = "Applied Physics Letters",
513 keywords = "silicon; ion implantation; carbon; crystal defects;
514 transmission electron microscopy; annealing; positron
515 annihilation; secondary ion mass spectroscopy; buried
516 layers; precipitation",
517 URL = "http://link.aip.org/link/?APL/70/252/1",
518 doi = "10.1063/1.118381",
519 notes = "si-c complexes, agglomerate, sic in si matrix, sic
524 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
525 Picraux and J. K. Watanabe and J. W. Mayer",
527 title = "Precipitation and relaxation in strained Si[sub 1 -
528 y]{C}[sub y]/Si heterostructures",
531 journal = "Journal of Applied Physics",
534 pages = "3656--3668",
535 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
536 URL = "http://link.aip.org/link/?JAP/76/3656/1",
537 doi = "10.1063/1.357429",
538 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
542 title = "Prospects for device implementation of wide band gap
544 author = "J. H. Edgar",
545 journal = "J. Mater. Res.",
550 doi = "10.1557/JMR.1992.0235",
551 notes = "properties wide band gap semiconductor, sic
555 @Article{zirkelbach2007,
556 title = "Monte Carlo simulation study of a selforganisation
557 process leading to ordered precipitate structures",
558 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
560 journal = "Nucl. Instr. and Meth. B",
567 doi = "doi:10.1016/j.nimb.2006.12.118",
568 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
572 @Article{zirkelbach2006,
573 title = "Monte-Carlo simulation study of the self-organization
574 of nanometric amorphous precipitates in regular arrays
575 during ion irradiation",
576 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
578 journal = "Nucl. Instr. and Meth. B",
585 doi = "doi:10.1016/j.nimb.2005.08.162",
586 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
590 @Article{zirkelbach2005,
591 title = "Modelling of a selforganization process leading to
592 periodic arrays of nanometric amorphous precipitates by
594 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
596 journal = "Comp. Mater. Sci.",
603 doi = "doi:10.1016/j.commatsci.2004.12.016",
604 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
609 title = "Controlling the density distribution of Si{C}
610 nanocrystals for the ion beam synthesis of buried Si{C}
612 journal = "Nuclear Instruments and Methods in Physics Research
613 Section B: Beam Interactions with Materials and Atoms",
620 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
621 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
622 author = "J. K. N. Lindner and B. Stritzker",
623 notes = "two-step implantation process",
626 @Article{lindner99_2,
627 title = "Mechanisms in the ion beam synthesis of Si{C} layers
629 journal = "Nuclear Instruments and Methods in Physics Research
630 Section B: Beam Interactions with Materials and Atoms",
637 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
638 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
639 author = "J. K. N. Lindner and B. Stritzker",
643 title = "Ion beam synthesis of buried Si{C} layers in silicon:
644 Basic physical processes",
645 journal = "Nuclear Instruments and Methods in Physics Research
646 Section B: Beam Interactions with Materials and Atoms",
653 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
654 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
655 author = "Jörg K. N. Lindner",
659 title = "High-dose carbon implantations into silicon:
660 fundamental studies for new technological tricks",
661 author = "J. K. N. Lindner",
662 journal = "Appl. Phys. A",
666 doi = "10.1007/s00339-002-2062-8",
667 notes = "ibs, burried sic layers",
671 author = "B. J. Alder and T. E. Wainwright",
672 title = "Phase Transition for a Hard Sphere System",
675 journal = "The Journal of Chemical Physics",
678 pages = "1208--1209",
679 URL = "http://link.aip.org/link/?JCP/27/1208/1",
680 doi = "10.1063/1.1743957",
684 author = "B. J. Alder and T. E. Wainwright",
685 title = "Studies in Molecular Dynamics. {I}. General Method",
688 journal = "The Journal of Chemical Physics",
692 URL = "http://link.aip.org/link/?JCP/31/459/1",
693 doi = "10.1063/1.1730376",
696 @Article{tersoff_si1,
697 title = "New empirical model for the structural properties of
699 author = "J. Tersoff",
700 journal = "Phys. Rev. Lett.",
707 doi = "10.1103/PhysRevLett.56.632",
708 publisher = "American Physical Society",
711 @Article{tersoff_si2,
712 title = "New empirical approach for the structure and energy of
714 author = "J. Tersoff",
715 journal = "Phys. Rev. B",
718 pages = "6991--7000",
722 doi = "10.1103/PhysRevB.37.6991",
723 publisher = "American Physical Society",
726 @Article{tersoff_si3,
727 title = "Empirical interatomic potential for silicon with
728 improved elastic properties",
729 author = "J. Tersoff",
730 journal = "Phys. Rev. B",
733 pages = "9902--9905",
737 doi = "10.1103/PhysRevB.38.9902",
738 publisher = "American Physical Society",
742 title = "Empirical Interatomic Potential for Carbon, with
743 Applications to Amorphous Carbon",
744 author = "J. Tersoff",
745 journal = "Phys. Rev. Lett.",
748 pages = "2879--2882",
752 doi = "10.1103/PhysRevLett.61.2879",
753 publisher = "American Physical Society",
757 title = "Modeling solid-state chemistry: Interatomic potentials
758 for multicomponent systems",
759 author = "J. Tersoff",
760 journal = "Phys. Rev. B",
763 pages = "5566--5568",
767 doi = "10.1103/PhysRevB.39.5566",
768 publisher = "American Physical Society",
772 title = "Point defects and dopant diffusion in silicon",
773 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
774 journal = "Rev. Mod. Phys.",
781 doi = "10.1103/RevModPhys.61.289",
782 publisher = "American Physical Society",
786 title = "Silicon carbide: synthesis and processing",
787 journal = "Nuclear Instruments and Methods in Physics Research
788 Section B: Beam Interactions with Materials and Atoms",
793 note = "Radiation Effects in Insulators",
795 doi = "DOI: 10.1016/0168-583X(96)00065-1",
796 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
801 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
802 Lin and B. Sverdlov and M. Burns",
804 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
805 ZnSe-based semiconductor device technologies",
808 journal = "Journal of Applied Physics",
811 pages = "1363--1398",
812 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
813 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
814 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
816 URL = "http://link.aip.org/link/?JAP/76/1363/1",
817 doi = "10.1063/1.358463",
821 author = "Noch Unbekannt",
822 title = "How to find references",
823 journal = "Journal of Applied References",
830 title = "Atomistic simulation of thermomechanical properties of
832 author = "Meijie Tang and Sidney Yip",
833 journal = "Phys. Rev. B",
836 pages = "15150--15159",
840 doi = "10.1103/PhysRevB.52.15150",
841 notes = "modified tersoff, scale cutoff with volume",
842 publisher = "American Physical Society",
846 title = "Silicon carbide as a new {MEMS} technology",
847 journal = "Sensors and Actuators A: Physical",
853 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
854 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
855 author = "Pasqualina M. Sarro",
857 keywords = "Silicon carbide",
858 keywords = "Micromachining",
859 keywords = "Mechanical stress",
863 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
864 semiconductor for high-temperature applications: {A}
866 journal = "Solid-State Electronics",
869 pages = "1409--1422",
872 doi = "DOI: 10.1016/0038-1101(96)00045-7",
873 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
874 author = "J. B. Casady and R. W. Johnson",
877 @Article{giancarli98,
878 title = "Design requirements for Si{C}/Si{C} composites
879 structural material in fusion power reactor blankets",
880 journal = "Fusion Engineering and Design",
886 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
887 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
888 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
889 Marois and N. B. Morley and J. F. Salavy",
893 title = "Electrical and optical characterization of Si{C}",
894 journal = "Physica B: Condensed Matter",
900 doi = "DOI: 10.1016/0921-4526(93)90249-6",
901 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
902 author = "G. Pensl and W. J. Choyke",
906 title = "Investigation of growth processes of ingots of silicon
907 carbide single crystals",
908 journal = "Journal of Crystal Growth",
913 notes = "modifief lely process",
915 doi = "DOI: 10.1016/0022-0248(78)90169-0",
916 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
917 author = "Yu. M. Tairov and V. F. Tsvetkov",
921 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
923 title = "Growth and Characterization of Cubic Si{C}
924 Single-Crystal Films on Si",
927 journal = "Journal of The Electrochemical Society",
930 pages = "1558--1565",
931 keywords = "semiconductor materials; silicon compounds; carbon
932 compounds; crystal morphology; electron mobility",
933 URL = "http://link.aip.org/link/?JES/134/1558/1",
934 doi = "10.1149/1.2100708",
935 notes = "blue light emitting diodes (led)",
939 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
940 and Hiroyuki Matsunami",
941 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
945 journal = "Journal of Applied Physics",
949 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
950 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
952 URL = "http://link.aip.org/link/?JAP/73/726/1",
953 doi = "10.1063/1.353329",
957 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
958 J. Choyke and J. L. Bradshaw and L. Henderson and M.
959 Yoganathan and J. Yang and P. Pirouz",
961 title = "Growth of improved quality 3{C}-Si{C} films on
962 6{H}-Si{C} substrates",
965 journal = "Applied Physics Letters",
968 pages = "1353--1355",
969 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
970 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
971 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
973 URL = "http://link.aip.org/link/?APL/56/1353/1",
974 doi = "10.1063/1.102512",
978 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
979 [alpha]-Si{C}(0001) at low temperatures by solid-source
980 molecular beam epitaxy",
981 journal = "Journal of Crystal Growth",
986 notes = "solid source mbe",
988 doi = "DOI: 10.1016/0022-0248(95)00170-0",
989 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
990 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
995 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
997 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1001 journal = "Applied Physics Letters",
1005 URL = "http://link.aip.org/link/?APL/18/509/1",
1006 notes = "first time sic by ibs",
1007 doi = "10.1063/1.1653516",
1011 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1012 J. Davis and G. E. Celler",
1014 title = "Formation of buried layers of beta-Si{C} using ion
1015 beam synthesis and incoherent lamp annealing",
1018 journal = "Applied Physics Letters",
1021 pages = "2242--2244",
1022 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1023 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1024 URL = "http://link.aip.org/link/?APL/51/2242/1",
1025 doi = "10.1063/1.98953",
1026 notes = "nice tem images, sic by ibs",
1030 author = "R. I. Scace and G. A. Slack",
1032 title = "Solubility of Carbon in Silicon and Germanium",
1035 journal = "The Journal of Chemical Physics",
1038 pages = "1551--1555",
1039 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1040 doi = "10.1063/1.1730236",
1041 notes = "solubility of c in c-si",
1045 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1046 F. W. Saris and W. Vandervorst",
1048 title = "Role of {C} and {B} clusters in transient diffusion of
1052 journal = "Applied Physics Letters",
1055 pages = "1150--1152",
1056 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1057 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1059 URL = "http://link.aip.org/link/?APL/68/1150/1",
1060 doi = "10.1063/1.115706",
1061 notes = "suppression of transient enhanced diffusion (ted)",
1065 title = "Implantation and transient boron diffusion: the role
1066 of the silicon self-interstitial",
1067 journal = "Nuclear Instruments and Methods in Physics Research
1068 Section B: Beam Interactions with Materials and Atoms",
1073 note = "Selected Papers of the Tenth International Conference
1074 on Ion Implantation Technology (IIT '94)",
1076 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1077 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1078 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1083 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1085 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1086 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1089 journal = "Applied Physics Letters",
1093 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1094 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1095 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1097 URL = "http://link.aip.org/link/?APL/64/324/1",
1098 doi = "10.1063/1.111195",
1099 notes = "beta sic nano crystals in si, mbe, annealing",
1103 author = "Richard A. Soref",
1105 title = "Optical band gap of the ternary semiconductor Si[sub 1
1106 - x - y]Ge[sub x]{C}[sub y]",
1109 journal = "Journal of Applied Physics",
1112 pages = "2470--2472",
1113 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1114 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1116 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1117 doi = "10.1063/1.349403",
1118 notes = "band gap of strained si by c",
1122 author = "E Kasper",
1123 title = "Superlattices of group {IV} elements, a new
1124 possibility to produce direct band gap material",
1125 journal = "Physica Scripta",
1128 URL = "http://stacks.iop.org/1402-4896/T35/232",
1130 notes = "superlattices, convert indirect band gap into a
1135 author = "H. J. Osten and J. Griesche and S. Scalese",
1137 title = "Substitutional carbon incorporation in epitaxial
1138 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1139 molecular beam epitaxy",
1142 journal = "Applied Physics Letters",
1146 keywords = "molecular beam epitaxial growth; semiconductor growth;
1147 wide band gap semiconductors; interstitials; silicon
1149 URL = "http://link.aip.org/link/?APL/74/836/1",
1150 doi = "10.1063/1.123384",
1151 notes = "substitutional c in si",
1154 @Article{hohenberg64,
1155 title = "Inhomogeneous Electron Gas",
1156 author = "P. Hohenberg and W. Kohn",
1157 journal = "Phys. Rev.",
1160 pages = "B864--B871",
1164 doi = "10.1103/PhysRev.136.B864",
1165 publisher = "American Physical Society",
1166 notes = "density functional theory, dft",
1170 title = "Self-Consistent Equations Including Exchange and
1171 Correlation Effects",
1172 author = "W. Kohn and L. J. Sham",
1173 journal = "Phys. Rev.",
1176 pages = "A1133--A1138",
1180 doi = "10.1103/PhysRev.140.A1133",
1181 publisher = "American Physical Society",
1182 notes = "dft, exchange and correlation",
1186 title = "Strain-stabilized highly concentrated pseudomorphic
1187 $Si1-x$$Cx$ layers in Si",
1188 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1190 journal = "Phys. Rev. Lett.",
1193 pages = "3578--3581",
1197 doi = "10.1103/PhysRevLett.72.3578",
1198 publisher = "American Physical Society",
1199 notes = "high c concentration in si, heterostructure, starined
1204 title = "Electron Transport Model for Strained Silicon-Carbon
1206 author = "Shu-Tong Chang and Chung-Yi Lin",
1207 journal = "Japanese Journal of Applied Physics",
1210 pages = "2257--2262",
1213 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1214 doi = "10.1143/JJAP.44.2257",
1215 publisher = "The Japan Society of Applied Physics",
1216 notes = "enhance of electron mobility in starined si",
1220 author = "H. J. Osten and P. Gaworzewski",
1222 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1223 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1227 journal = "Journal of Applied Physics",
1230 pages = "4977--4981",
1231 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1232 semiconductors; semiconductor epitaxial layers; carrier
1233 density; Hall mobility; interstitials; defect states",
1234 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1235 doi = "10.1063/1.366364",
1236 notes = "charge transport in strained si",