2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
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1292 journal = "Mater. Sci. Eng., C",
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1346 journal = "Materials Science and Engineering: R: Reports",
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1377 author = "B. J. Alder and T. E. Wainwright",
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1386 doi = "10.1063/1.1743957",
1390 author = "B. J. Alder and T. E. Wainwright",
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1394 journal = "J. Chem. Phys.",
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1469 pages = "5566--5568",
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1474 publisher = "American Physical Society",
1478 title = "Carbon defects and defect reactions in silicon",
1479 author = "J. Tersoff",
1480 journal = "Phys. Rev. Lett.",
1483 pages = "1757--1760",
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1488 publisher = "American Physical Society",
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1493 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1494 journal = "Rev. Mod. Phys.",
1501 doi = "10.1103/RevModPhys.61.289",
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1507 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1524 optoelectronic device fabrication and characterization
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1547 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1548 Lin and B. Sverdlov and M. Burns",
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1551 ZnSe-based semiconductor device technologies",
1554 journal = "J. Appl. Phys.",
1557 pages = "1363--1398",
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1559 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1564 notes = "sic intro, properties",
1568 author = "Noch Unbekannt",
1569 title = "How to find references",
1570 journal = "Journal of Applied References",
1577 title = "Atomistic simulation of thermomechanical properties of
1579 author = "Meijie Tang and Sidney Yip",
1580 journal = "Phys. Rev. B",
1583 pages = "15150--15159",
1586 doi = "10.1103/PhysRevB.52.15150",
1587 notes = "modified tersoff, scale cutoff with volume, promising
1588 tersoff reparametrization",
1589 publisher = "American Physical Society",
1593 title = "Silicon carbide as a new {MEMS} technology",
1594 journal = "Sensors and Actuators A: Physical",
1600 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1601 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
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1605 keywords = "Micromachining",
1606 keywords = "Mechanical stress",
1610 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1611 semiconductor for high-temperature applications: {A}
1613 journal = "Solid-State Electronics",
1616 pages = "1409--1422",
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1621 author = "J. B. Casady and R. W. Johnson",
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1625 @Article{giancarli98,
1626 title = "Design requirements for Si{C}/Si{C} composites
1627 structural material in fusion power reactor blankets",
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1634 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1636 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1637 Marois and N. B. Morley and J. F. Salavy",
1641 title = "Electrical and optical characterization of Si{C}",
1642 journal = "Physica B: Condensed Matter",
1648 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1649 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1650 author = "G. Pensl and W. J. Choyke",
1654 title = "Investigation of growth processes of ingots of silicon
1655 carbide single crystals",
1656 journal = "J. Cryst. Growth",
1661 notes = "modified lely process",
1663 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1664 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1665 author = "Yu. M. Tairov and V. F. Tsvetkov",
1669 title = "General principles of growing large-size single
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1671 journal = "Journal of Crystal Growth",
1678 doi = "DOI: 10.1016/0022-0248(81)90184-6",
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1680 author = "Yu.M. Tairov and V. F. Tsvetkov",
1684 title = "Si{C} boule growth by sublimation vapor transport",
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1710 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
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1732 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1735 title = "Production of large-area single-crystal wafers of
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1739 journal = "Appl. Phys. Lett.",
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1825 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1838 URL = "http://link.aip.org/link/?JAP/73/726/1",
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1846 Yoganathan and J. Yang and P. Pirouz",
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1868 title = "Chemical vapor deposition and characterization of
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1888 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1889 Yoganathan and J. Yang and P. Pirouz",
1891 title = "Growth of improved quality 3{C}-Si{C} films on
1892 6{H}-Si{C} substrates",
1895 journal = "Appl. Phys. Lett.",
1898 pages = "1353--1355",
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1900 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
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1910 Rozgonyi and K. L. More",
1912 title = "An examination of double positioning boundaries and
1913 interface misfit in beta-Si{C} films on alpha-Si{C}
1917 journal = "Journal of Applied Physics",
1920 pages = "2645--2650",
1921 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
1922 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1923 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1924 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1925 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1926 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1927 doi = "10.1063/1.341004",
1931 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1932 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1933 and W. J. Choyke and L. Clemen and M. Yoganathan",
1935 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1936 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1939 journal = "Applied Physics Letters",
1943 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1944 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1945 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1946 URL = "http://link.aip.org/link/?APL/59/333/1",
1947 doi = "10.1063/1.105587",
1951 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1952 Thokala and M. J. Loboda",
1954 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1955 films on 6{H}-Si{C} by chemical vapor deposition from
1959 journal = "J. Appl. Phys.",
1962 pages = "1271--1273",
1963 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1964 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1966 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1967 doi = "10.1063/1.360368",
1968 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1972 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
1973 properties of its p-n junction",
1974 journal = "Journal of Crystal Growth",
1981 doi = "DOI: 10.1016/0022-0248(87)90449-0",
1982 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
1983 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
1985 notes = "first time ssmbe of 3c-sic on 6h-sic",
1989 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1990 [alpha]-Si{C}(0001) at low temperatures by solid-source
1991 molecular beam epitaxy",
1992 journal = "J. Cryst. Growth",
1998 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1999 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2000 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2001 Schr{\"{o}}ter and W. Richter",
2002 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2005 @Article{fissel95_apl,
2006 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2008 title = "Low-temperature growth of Si{C} thin films on Si and
2009 6{H}--Si{C} by solid-source molecular beam epitaxy",
2012 journal = "Appl. Phys. Lett.",
2015 pages = "3182--3184",
2016 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2018 URL = "http://link.aip.org/link/?APL/66/3182/1",
2019 doi = "10.1063/1.113716",
2020 notes = "mbe 3c-sic on si and 6h-sic",
2024 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2025 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2027 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2028 migration enhanced epitaxy controlled to an atomic
2029 level using surface superstructures",
2032 journal = "Applied Physics Letters",
2035 pages = "1204--1206",
2036 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2037 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2039 URL = "http://link.aip.org/link/?APL/68/1204/1",
2040 doi = "10.1063/1.115969",
2041 notes = "ss mbe sic, superstructure, reconstruction",
2045 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2046 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2047 C. M. Bertoni and A. Catellani",
2048 journal = "Phys. Rev. Lett.",
2055 doi = "10.1103/PhysRevLett.91.136101",
2056 publisher = "American Physical Society",
2057 notes = "dft calculations mbe sic growth",
2061 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2063 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2067 journal = "Appl. Phys. Lett.",
2071 URL = "http://link.aip.org/link/?APL/18/509/1",
2072 doi = "10.1063/1.1653516",
2073 notes = "first time sic by ibs, follow cites for precipitation
2078 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2079 and E. V. Lubopytova",
2080 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2081 by ion implantation",
2082 publisher = "Taylor \& Francis",
2084 journal = "Radiation Effects",
2088 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2089 notes = "3c-sic for different temperatures, amorphous, poly,
2090 single crystalline",
2093 @Article{akimchenko80,
2094 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2095 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2096 title = "Structure and optical properties of silicon implanted
2097 by high doses of 70 and 310 ke{V} carbon ions",
2098 publisher = "Taylor \& Francis",
2100 journal = "Radiation Effects",
2104 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2105 notes = "3c-sic nucleation by thermal spikes",
2109 title = "Structure and annealing properties of silicon carbide
2110 thin layers formed by implantation of carbon ions in
2112 journal = "Thin Solid Films",
2119 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2120 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2121 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2126 title = "Characteristics of the synthesis of [beta]-Si{C} by
2127 the implantation of carbon ions into silicon",
2128 journal = "Thin Solid Films",
2135 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2136 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2137 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2142 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2143 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2144 Chater and J. A. Iulner and J. Davis",
2145 title = "Formation mechanisms and structures of insulating
2146 compounds formed in silicon by ion beam synthesis",
2147 publisher = "Taylor \& Francis",
2149 journal = "Radiation Effects",
2153 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2154 notes = "ibs, comparison with sio and sin, higher temp or
2159 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2160 J. Davis and G. E. Celler",
2162 title = "Formation of buried layers of beta-Si{C} using ion
2163 beam synthesis and incoherent lamp annealing",
2166 journal = "Appl. Phys. Lett.",
2169 pages = "2242--2244",
2170 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2171 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2172 URL = "http://link.aip.org/link/?APL/51/2242/1",
2173 doi = "10.1063/1.98953",
2174 notes = "nice tem images, sic by ibs",
2178 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2179 and M. Olivier and A. M. Papon and G. Rolland",
2181 title = "High-temperature ion beam synthesis of cubic Si{C}",
2184 journal = "Journal of Applied Physics",
2187 pages = "2908--2912",
2188 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2189 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2190 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2191 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2192 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2193 REACTIONS; MONOCRYSTALS",
2194 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2195 doi = "10.1063/1.346092",
2196 notes = "triple energy implantation to overcome high annealing
2201 author = "R. I. Scace and G. A. Slack",
2203 title = "Solubility of Carbon in Silicon and Germanium",
2206 journal = "J. Chem. Phys.",
2209 pages = "1551--1555",
2210 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2211 doi = "10.1063/1.1730236",
2212 notes = "solubility of c in c-si, si-c phase diagram",
2216 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2217 F. W. Saris and W. Vandervorst",
2219 title = "Role of {C} and {B} clusters in transient diffusion of
2223 journal = "Appl. Phys. Lett.",
2226 pages = "1150--1152",
2227 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2228 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2230 URL = "http://link.aip.org/link/?APL/68/1150/1",
2231 doi = "10.1063/1.115706",
2232 notes = "suppression of transient enhanced diffusion (ted)",
2236 title = "Implantation and transient boron diffusion: the role
2237 of the silicon self-interstitial",
2238 journal = "Nucl. Instrum. Methods Phys. Res. B",
2243 note = "Selected Papers of the Tenth International Conference
2244 on Ion Implantation Technology (IIT '94)",
2246 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2247 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2248 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2253 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2254 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2255 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2258 title = "Physical mechanisms of transient enhanced dopant
2259 diffusion in ion-implanted silicon",
2262 journal = "J. Appl. Phys.",
2265 pages = "6031--6050",
2266 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2267 doi = "10.1063/1.364452",
2268 notes = "ted, transient enhanced diffusion, c silicon trap",
2272 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2274 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2275 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2278 journal = "Appl. Phys. Lett.",
2282 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2283 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2284 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2286 URL = "http://link.aip.org/link/?APL/64/324/1",
2287 doi = "10.1063/1.111195",
2288 notes = "beta sic nano crystals in si, mbe, annealing",
2292 author = "Richard A. Soref",
2294 title = "Optical band gap of the ternary semiconductor Si[sub 1
2295 - x - y]Ge[sub x]{C}[sub y]",
2298 journal = "J. Appl. Phys.",
2301 pages = "2470--2472",
2302 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2303 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2305 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2306 doi = "10.1063/1.349403",
2307 notes = "band gap of strained si by c",
2311 author = "E Kasper",
2312 title = "Superlattices of group {IV} elements, a new
2313 possibility to produce direct band gap material",
2314 journal = "Physica Scripta",
2317 URL = "http://stacks.iop.org/1402-4896/T35/232",
2319 notes = "superlattices, convert indirect band gap into a
2324 author = "H. J. Osten and J. Griesche and S. Scalese",
2326 title = "Substitutional carbon incorporation in epitaxial
2327 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2328 molecular beam epitaxy",
2331 journal = "Appl. Phys. Lett.",
2335 keywords = "molecular beam epitaxial growth; semiconductor growth;
2336 wide band gap semiconductors; interstitials; silicon
2338 URL = "http://link.aip.org/link/?APL/74/836/1",
2339 doi = "10.1063/1.123384",
2340 notes = "substitutional c in si",
2343 @Article{hohenberg64,
2344 title = "Inhomogeneous Electron Gas",
2345 author = "P. Hohenberg and W. Kohn",
2346 journal = "Phys. Rev.",
2349 pages = "B864--B871",
2353 doi = "10.1103/PhysRev.136.B864",
2354 publisher = "American Physical Society",
2355 notes = "density functional theory, dft",
2359 title = "Self-Consistent Equations Including Exchange and
2360 Correlation Effects",
2361 author = "W. Kohn and L. J. Sham",
2362 journal = "Phys. Rev.",
2365 pages = "A1133--A1138",
2369 doi = "10.1103/PhysRev.140.A1133",
2370 publisher = "American Physical Society",
2371 notes = "dft, exchange and correlation",
2375 title = "Strain-stabilized highly concentrated pseudomorphic
2376 $Si1-x$$Cx$ layers in Si",
2377 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2379 journal = "Phys. Rev. Lett.",
2382 pages = "3578--3581",
2386 doi = "10.1103/PhysRevLett.72.3578",
2387 publisher = "American Physical Society",
2388 notes = "high c concentration in si, heterostructure, strained
2393 title = "Electron Transport Model for Strained Silicon-Carbon
2395 author = "Shu-Tong Chang and Chung-Yi Lin",
2396 journal = "Japanese J. Appl. Phys.",
2399 pages = "2257--2262",
2402 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2403 doi = "10.1143/JJAP.44.2257",
2404 publisher = "The Japan Society of Applied Physics",
2405 notes = "enhance of electron mobility in starined si",
2409 author = "H. J. Osten and P. Gaworzewski",
2411 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2412 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2416 journal = "J. Appl. Phys.",
2419 pages = "4977--4981",
2420 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2421 semiconductors; semiconductor epitaxial layers; carrier
2422 density; Hall mobility; interstitials; defect states",
2423 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2424 doi = "10.1063/1.366364",
2425 notes = "charge transport in strained si",
2429 title = "Carbon-mediated aggregation of self-interstitials in
2430 silicon: {A} large-scale molecular dynamics study",
2431 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2432 journal = "Phys. Rev. B",
2439 doi = "10.1103/PhysRevB.69.155214",
2440 publisher = "American Physical Society",
2441 notes = "simulation using promising tersoff reparametrization",
2445 title = "Event-Based Relaxation of Continuous Disordered
2447 author = "G. T. Barkema and Normand Mousseau",
2448 journal = "Phys. Rev. Lett.",
2451 pages = "4358--4361",
2455 doi = "10.1103/PhysRevLett.77.4358",
2456 publisher = "American Physical Society",
2457 notes = "activation relaxation technique, art, speed up slow
2462 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2463 Minoukadeh and F. Willaime",
2465 title = "Some improvements of the activation-relaxation
2466 technique method for finding transition pathways on
2467 potential energy surfaces",
2470 journal = "J. Chem. Phys.",
2476 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2477 surfaces; vacancies (crystal)",
2478 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2479 doi = "10.1063/1.3088532",
2480 notes = "improvements to art, refs for methods to find
2481 transition pathways",
2484 @Article{parrinello81,
2485 author = "M. Parrinello and A. Rahman",
2487 title = "Polymorphic transitions in single crystals: {A} new
2488 molecular dynamics method",
2491 journal = "J. Appl. Phys.",
2494 pages = "7182--7190",
2495 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2496 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2497 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2498 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2499 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2501 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2502 doi = "10.1063/1.328693",
2505 @Article{stillinger85,
2506 title = "Computer simulation of local order in condensed phases
2508 author = "Frank H. Stillinger and Thomas A. Weber",
2509 journal = "Phys. Rev. B",
2512 pages = "5262--5271",
2516 doi = "10.1103/PhysRevB.31.5262",
2517 publisher = "American Physical Society",
2521 title = "Empirical potential for hydrocarbons for use in
2522 simulating the chemical vapor deposition of diamond
2524 author = "Donald W. Brenner",
2525 journal = "Phys. Rev. B",
2528 pages = "9458--9471",
2532 doi = "10.1103/PhysRevB.42.9458",
2533 publisher = "American Physical Society",
2534 notes = "brenner hydro carbons",
2538 title = "Modeling of Covalent Bonding in Solids by Inversion of
2539 Cohesive Energy Curves",
2540 author = "Martin Z. Bazant and Efthimios Kaxiras",
2541 journal = "Phys. Rev. Lett.",
2544 pages = "4370--4373",
2548 doi = "10.1103/PhysRevLett.77.4370",
2549 publisher = "American Physical Society",
2550 notes = "first si edip",
2554 title = "Environment-dependent interatomic potential for bulk
2556 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2558 journal = "Phys. Rev. B",
2561 pages = "8542--8552",
2565 doi = "10.1103/PhysRevB.56.8542",
2566 publisher = "American Physical Society",
2567 notes = "second si edip",
2571 title = "Interatomic potential for silicon defects and
2573 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2574 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2575 journal = "Phys. Rev. B",
2578 pages = "2539--2550",
2582 doi = "10.1103/PhysRevB.58.2539",
2583 publisher = "American Physical Society",
2584 notes = "latest si edip, good dislocation explanation",
2588 title = "{PARCAS} molecular dynamics code",
2589 author = "K. Nordlund",
2594 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2596 author = "Arthur F. Voter",
2597 journal = "Phys. Rev. Lett.",
2600 pages = "3908--3911",
2604 doi = "10.1103/PhysRevLett.78.3908",
2605 publisher = "American Physical Society",
2606 notes = "hyperdynamics, accelerated md",
2610 author = "Arthur F. Voter",
2612 title = "A method for accelerating the molecular dynamics
2613 simulation of infrequent events",
2616 journal = "J. Chem. Phys.",
2619 pages = "4665--4677",
2620 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2621 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2622 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2623 energy functions; surface diffusion; reaction kinetics
2624 theory; potential energy surfaces",
2625 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2626 doi = "10.1063/1.473503",
2627 notes = "improved hyperdynamics md",
2630 @Article{sorensen2000,
2631 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2633 title = "Temperature-accelerated dynamics for simulation of
2637 journal = "J. Chem. Phys.",
2640 pages = "9599--9606",
2641 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2642 MOLECULAR DYNAMICS METHOD; surface diffusion",
2643 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2644 doi = "10.1063/1.481576",
2645 notes = "temperature accelerated dynamics, tad",
2649 title = "Parallel replica method for dynamics of infrequent
2651 author = "Arthur F. Voter",
2652 journal = "Phys. Rev. B",
2655 pages = "R13985--R13988",
2659 doi = "10.1103/PhysRevB.57.R13985",
2660 publisher = "American Physical Society",
2661 notes = "parallel replica method, accelerated md",
2665 author = "Xiongwu Wu and Shaomeng Wang",
2667 title = "Enhancing systematic motion in molecular dynamics
2671 journal = "J. Chem. Phys.",
2674 pages = "9401--9410",
2675 keywords = "molecular dynamics method; argon; Lennard-Jones
2676 potential; crystallisation; liquid theory",
2677 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2678 doi = "10.1063/1.478948",
2679 notes = "self guided md, sgmd, accelerated md, enhancing
2683 @Article{choudhary05,
2684 author = "Devashish Choudhary and Paulette Clancy",
2686 title = "Application of accelerated molecular dynamics schemes
2687 to the production of amorphous silicon",
2690 journal = "J. Chem. Phys.",
2696 keywords = "molecular dynamics method; silicon; glass structure;
2697 amorphous semiconductors",
2698 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2699 doi = "10.1063/1.1878733",
2700 notes = "explanation of sgmd and hyper md, applied to amorphous
2705 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2707 title = "Carbon precipitation in silicon: Why is it so
2711 journal = "Appl. Phys. Lett.",
2714 pages = "3336--3338",
2715 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2716 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2718 URL = "http://link.aip.org/link/?APL/62/3336/1",
2719 doi = "10.1063/1.109063",
2720 notes = "interfacial energy of cubic sic and si, si self
2721 interstitials necessary for precipitation, volume
2722 decrease, high interface energy",
2725 @Article{chaussende08,
2726 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2727 journal = "J. Cryst. Growth",
2732 note = "Proceedings of the E-MRS Conference, Symposium G -
2733 Substrates of Wide Bandgap Materials",
2735 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2736 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2737 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2738 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2739 and A. Andreadou and E. K. Polychroniadis and C.
2740 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2741 notes = "3c-sic crystal growth, sic fabrication + links,
2745 @Article{chaussende07,
2746 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2747 title = "Status of Si{C} bulk growth processes",
2748 journal = "Journal of Physics D: Applied Physics",
2752 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2754 notes = "review of sic single crystal growth methods, process
2759 title = "Forces in Molecules",
2760 author = "R. P. Feynman",
2761 journal = "Phys. Rev.",
2768 doi = "10.1103/PhysRev.56.340",
2769 publisher = "American Physical Society",
2770 notes = "hellmann feynman forces",
2774 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2775 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2776 their Contrasting Properties",
2777 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2779 journal = "Phys. Rev. Lett.",
2786 doi = "10.1103/PhysRevLett.84.943",
2787 publisher = "American Physical Society",
2788 notes = "si sio2 and sic sio2 interface",
2791 @Article{djurabekova08,
2792 title = "Atomistic simulation of the interface structure of Si
2793 nanocrystals embedded in amorphous silica",
2794 author = "Flyura Djurabekova and Kai Nordlund",
2795 journal = "Phys. Rev. B",
2802 doi = "10.1103/PhysRevB.77.115325",
2803 publisher = "American Physical Society",
2804 notes = "nc-si in sio2, interface energy, nc construction,
2805 angular distribution, coordination",
2809 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2810 W. Liang and J. Zou",
2812 title = "Nature of interfacial defects and their roles in
2813 strain relaxation at highly lattice mismatched
2814 3{C}-Si{C}/Si (001) interface",
2817 journal = "J. Appl. Phys.",
2823 keywords = "anelastic relaxation; crystal structure; dislocations;
2824 elemental semiconductors; semiconductor growth;
2825 semiconductor thin films; silicon; silicon compounds;
2826 stacking faults; wide band gap semiconductors",
2827 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2828 doi = "10.1063/1.3234380",
2829 notes = "sic/si interface, follow refs, tem image
2830 deconvolution, dislocation defects",
2833 @Article{kitabatake93,
2834 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2837 title = "Simulations and experiments of Si{C} heteroepitaxial
2838 growth on Si(001) surface",
2841 journal = "J. Appl. Phys.",
2844 pages = "4438--4445",
2845 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2846 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2847 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2848 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2849 doi = "10.1063/1.354385",
2850 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2854 @Article{kitabatake97,
2855 author = "Makoto Kitabatake",
2856 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2857 Heteroepitaxial Growth",
2858 publisher = "WILEY-VCH Verlag",
2860 journal = "physica status solidi (b)",
2863 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2864 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2865 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2869 title = "Strain relaxation and thermal stability of the
2870 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2872 journal = "Thin Solid Films",
2879 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2880 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2881 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2882 keywords = "Strain relaxation",
2883 keywords = "Interfaces",
2884 keywords = "Thermal stability",
2885 keywords = "Molecular dynamics",
2886 notes = "tersoff sic/si interface study",
2890 title = "Ab initio Study of Misfit Dislocations at the
2891 $Si{C}/Si(001)$ Interface",
2892 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2894 journal = "Phys. Rev. Lett.",
2901 doi = "10.1103/PhysRevLett.89.156101",
2902 publisher = "American Physical Society",
2903 notes = "sic/si interface study",
2906 @Article{pizzagalli03,
2907 title = "Theoretical investigations of a highly mismatched
2908 interface: Si{C}/Si(001)",
2909 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2911 journal = "Phys. Rev. B",
2918 doi = "10.1103/PhysRevB.68.195302",
2919 publisher = "American Physical Society",
2920 notes = "tersoff md and ab initio sic/si interface study",
2924 title = "Atomic configurations of dislocation core and twin
2925 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2926 electron microscopy",
2927 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2928 H. Zheng and J. W. Liang",
2929 journal = "Phys. Rev. B",
2936 doi = "10.1103/PhysRevB.75.184103",
2937 publisher = "American Physical Society",
2938 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2942 @Article{hornstra58,
2943 title = "Dislocations in the diamond lattice",
2944 journal = "Journal of Physics and Chemistry of Solids",
2951 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2952 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2953 author = "J. Hornstra",
2954 notes = "dislocations in diamond lattice",
2958 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2959 Ion `Hot' Implantation",
2960 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2961 Hirao and Naoki Arai and Tomio Izumi",
2962 journal = "Japanese J. Appl. Phys.",
2964 number = "Part 1, No. 2A",
2968 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2969 doi = "10.1143/JJAP.31.343",
2970 publisher = "The Japan Society of Applied Physics",
2971 notes = "c-c bonds in c implanted si, hot implantation
2972 efficiency, c-c hard to break by thermal annealing",
2975 @Article{eichhorn99,
2976 author = "F. Eichhorn and N. Schell and W. Matz and R.
2979 title = "Strain and Si{C} particle formation in silicon
2980 implanted with carbon ions of medium fluence studied by
2981 synchrotron x-ray diffraction",
2984 journal = "J. Appl. Phys.",
2987 pages = "4184--4187",
2988 keywords = "silicon; carbon; elemental semiconductors; chemical
2989 interdiffusion; ion implantation; X-ray diffraction;
2990 precipitation; semiconductor doping",
2991 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2992 doi = "10.1063/1.371344",
2993 notes = "sic conversion by ibs, detected substitutional carbon,
2994 expansion of si lattice",
2997 @Article{eichhorn02,
2998 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2999 Metzger and W. Matz and R. K{\"{o}}gler",
3001 title = "Structural relation between Si and Si{C} formed by
3002 carbon ion implantation",
3005 journal = "J. Appl. Phys.",
3008 pages = "1287--1292",
3009 keywords = "silicon compounds; wide band gap semiconductors; ion
3010 implantation; annealing; X-ray scattering; transmission
3011 electron microscopy",
3012 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3013 doi = "10.1063/1.1428105",
3014 notes = "3c-sic alignement to si host in ibs depending on
3015 temperature, might explain c into c sub trafo",
3019 author = "G Lucas and M Bertolus and L Pizzagalli",
3020 title = "An environment-dependent interatomic potential for
3021 silicon carbide: calculation of bulk properties,
3022 high-pressure phases, point and extended defects, and
3023 amorphous structures",
3024 journal = "J. Phys.: Condens. Matter",
3028 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3034 author = "J Godet and L Pizzagalli and S Brochard and P
3036 title = "Comparison between classical potentials and ab initio
3037 methods for silicon under large shear",
3038 journal = "J. Phys.: Condens. Matter",
3042 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3044 notes = "comparison of empirical potentials, stillinger weber,
3045 edip, tersoff, ab initio",
3048 @Article{moriguchi98,
3049 title = "Verification of Tersoff's Potential for Static
3050 Structural Analysis of Solids of Group-{IV} Elements",
3051 author = "Koji Moriguchi and Akira Shintani",
3052 journal = "Japanese J. Appl. Phys.",
3054 number = "Part 1, No. 2",
3058 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3059 doi = "10.1143/JJAP.37.414",
3060 publisher = "The Japan Society of Applied Physics",
3061 notes = "tersoff stringent test",
3064 @Article{mazzarolo01,
3065 title = "Low-energy recoils in crystalline silicon: Quantum
3067 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3068 Lulli and Eros Albertazzi",
3069 journal = "Phys. Rev. B",
3076 doi = "10.1103/PhysRevB.63.195207",
3077 publisher = "American Physical Society",
3080 @Article{holmstroem08,
3081 title = "Threshold defect production in silicon determined by
3082 density functional theory molecular dynamics
3084 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3085 journal = "Phys. Rev. B",
3092 doi = "10.1103/PhysRevB.78.045202",
3093 publisher = "American Physical Society",
3094 notes = "threshold displacement comparison empirical and ab
3098 @Article{nordlund97,
3099 title = "Repulsive interatomic potentials calculated using
3100 Hartree-Fock and density-functional theory methods",
3101 journal = "Nucl. Instrum. Methods Phys. Res. B",
3108 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3109 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3110 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3111 notes = "repulsive ab initio potential",
3115 title = "Efficiency of ab-initio total energy calculations for
3116 metals and semiconductors using a plane-wave basis
3118 journal = "Comput. Mater. Sci.",
3125 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3126 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3127 author = "G. Kresse and J. Furthm{\"{u}}ller",
3132 title = "Projector augmented-wave method",
3133 author = "P. E. Bl{\"o}chl",
3134 journal = "Phys. Rev. B",
3137 pages = "17953--17979",
3141 doi = "10.1103/PhysRevB.50.17953",
3142 publisher = "American Physical Society",
3143 notes = "paw method",
3147 title = "Norm-Conserving Pseudopotentials",
3148 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3149 journal = "Phys. Rev. Lett.",
3152 pages = "1494--1497",
3156 doi = "10.1103/PhysRevLett.43.1494",
3157 publisher = "American Physical Society",
3158 notes = "norm-conserving pseudopotentials",
3161 @Article{vanderbilt90,
3162 title = "Soft self-consistent pseudopotentials in a generalized
3163 eigenvalue formalism",
3164 author = "David Vanderbilt",
3165 journal = "Phys. Rev. B",
3168 pages = "7892--7895",
3172 doi = "10.1103/PhysRevB.41.7892",
3173 publisher = "American Physical Society",
3174 notes = "vasp pseudopotentials",
3178 title = "Accurate and simple density functional for the
3179 electronic exchange energy: Generalized gradient
3181 author = "John P. Perdew and Yue Wang",
3182 journal = "Phys. Rev. B",
3185 pages = "8800--8802",
3189 doi = "10.1103/PhysRevB.33.8800",
3190 publisher = "American Physical Society",
3191 notes = "rapid communication gga",
3195 title = "Generalized gradient approximations for exchange and
3196 correlation: {A} look backward and forward",
3197 journal = "Physica B: Condensed Matter",
3204 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3205 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3206 author = "John P. Perdew",
3207 notes = "gga overview",
3211 title = "Atoms, molecules, solids, and surfaces: Applications
3212 of the generalized gradient approximation for exchange
3214 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3215 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3216 and Carlos Fiolhais",
3217 journal = "Phys. Rev. B",
3220 pages = "6671--6687",
3224 doi = "10.1103/PhysRevB.46.6671",
3225 publisher = "American Physical Society",
3226 notes = "gga pw91 (as in vasp)",
3229 @Article{baldereschi73,
3230 title = "Mean-Value Point in the Brillouin Zone",
3231 author = "A. Baldereschi",
3232 journal = "Phys. Rev. B",
3235 pages = "5212--5215",
3239 doi = "10.1103/PhysRevB.7.5212",
3240 publisher = "American Physical Society",
3241 notes = "mean value k point",
3245 title = "Ab initio pseudopotential calculations of dopant
3247 journal = "Comput. Mater. Sci.",
3254 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3255 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3256 author = "Jing Zhu",
3257 keywords = "TED (transient enhanced diffusion)",
3258 keywords = "Boron dopant",
3259 keywords = "Carbon dopant",
3260 keywords = "Defect",
3261 keywords = "ab initio pseudopotential method",
3262 keywords = "Impurity cluster",
3263 notes = "binding of c to si interstitial, c in si defects",
3267 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3269 title = "Si{C} buried layer formation by ion beam synthesis at
3273 journal = "Appl. Phys. Lett.",
3276 pages = "2646--2648",
3277 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3278 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3279 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3280 ELECTRON MICROSCOPY",
3281 URL = "http://link.aip.org/link/?APL/66/2646/1",
3282 doi = "10.1063/1.113112",
3283 notes = "precipitation mechanism by substitutional carbon, si
3284 self interstitials react with further implanted c",
3288 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3289 Kolodzey and A. Hairie",
3291 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3295 journal = "J. Appl. Phys.",
3298 pages = "4631--4633",
3299 keywords = "silicon compounds; precipitation; localised modes;
3300 semiconductor epitaxial layers; infrared spectra;
3301 Fourier transform spectra; thermal stability;
3303 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3304 doi = "10.1063/1.368703",
3305 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3309 author = "R Jones and B J Coomer and P R Briddon",
3310 title = "Quantum mechanical modelling of defects in
3312 journal = "J. Phys.: Condens. Matter",
3316 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3318 notes = "ab inito dft intro, vibrational modes, c defect in
3323 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3324 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3325 J. E. Greene and S. G. Bishop",
3327 title = "Carbon incorporation pathways and lattice sites in
3328 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3329 molecular-beam epitaxy",
3332 journal = "J. Appl. Phys.",
3335 pages = "5716--5727",
3336 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3337 doi = "10.1063/1.1465122",
3338 notes = "c substitutional incorporation pathway, dft and expt",
3342 title = "Dynamic properties of interstitial carbon and
3343 carbon-carbon pair defects in silicon",
3344 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3346 journal = "Phys. Rev. B",
3349 pages = "2188--2194",
3353 doi = "10.1103/PhysRevB.55.2188",
3354 publisher = "American Physical Society",
3355 notes = "ab initio c in si and di-carbon defect, no formation
3356 energies, different migration barriers and paths",
3360 title = "Interstitial carbon and the carbon-carbon pair in
3361 silicon: Semiempirical electronic-structure
3363 author = "Matthew J. Burnard and Gary G. DeLeo",
3364 journal = "Phys. Rev. B",
3367 pages = "10217--10225",
3371 doi = "10.1103/PhysRevB.47.10217",
3372 publisher = "American Physical Society",
3373 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3374 carbon defect, formation energies",
3378 title = "Electronic structure of interstitial carbon in
3380 author = "Morgan Besson and Gary G. DeLeo",
3381 journal = "Phys. Rev. B",
3384 pages = "4028--4033",
3388 doi = "10.1103/PhysRevB.43.4028",
3389 publisher = "American Physical Society",
3393 title = "Review of atomistic simulations of surface diffusion
3394 and growth on semiconductors",
3395 journal = "Comput. Mater. Sci.",
3400 note = "Proceedings of the Workshop on Virtual Molecular Beam
3403 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3404 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3405 author = "Efthimios Kaxiras",
3406 notes = "might contain c 100 db formation energy, overview md,
3407 tight binding, first principles",
3410 @Article{kaukonen98,
3411 title = "Effect of {N} and {B} doping on the growth of {CVD}
3413 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3415 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3416 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3418 journal = "Phys. Rev. B",
3421 pages = "9965--9970",
3425 doi = "10.1103/PhysRevB.57.9965",
3426 publisher = "American Physical Society",
3427 notes = "constrained conjugate gradient relaxation technique
3432 title = "Correlation between the antisite pair and the ${DI}$
3434 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3435 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3437 journal = "Phys. Rev. B",
3444 doi = "10.1103/PhysRevB.67.155203",
3445 publisher = "American Physical Society",
3449 title = "Production and recovery of defects in Si{C} after
3450 irradiation and deformation",
3451 journal = "J. Nucl. Mater.",
3454 pages = "1803--1808",
3458 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3459 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3460 author = "J. Chen and P. Jung and H. Klein",
3464 title = "Accumulation, dynamic annealing and thermal recovery
3465 of ion-beam-induced disorder in silicon carbide",
3466 journal = "Nucl. Instrum. Methods Phys. Res. B",
3473 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3474 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3475 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3478 @Article{bockstedte03,
3479 title = "Ab initio study of the migration of intrinsic defects
3481 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3483 journal = "Phys. Rev. B",
3490 doi = "10.1103/PhysRevB.68.205201",
3491 publisher = "American Physical Society",
3492 notes = "defect migration in sic",
3496 title = "Theoretical study of vacancy diffusion and
3497 vacancy-assisted clustering of antisites in Si{C}",
3498 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3500 journal = "Phys. Rev. B",
3507 doi = "10.1103/PhysRevB.68.155208",
3508 publisher = "American Physical Society",
3512 journal = "Telegrafiya i Telefoniya bez Provodov",
3516 author = "O. V. Lossev",
3520 title = "Luminous carborundum detector and detection effect and
3521 oscillations with crystals",
3522 journal = "Philosophical Magazine Series 7",
3525 pages = "1024--1044",
3527 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3528 author = "O. V. Lossev",
3532 journal = "Physik. Zeitschr.",
3536 author = "O. V. Lossev",
3540 journal = "Physik. Zeitschr.",
3544 author = "O. V. Lossev",
3548 journal = "Physik. Zeitschr.",
3552 author = "O. V. Lossev",
3556 title = "A note on carborundum",
3557 journal = "Electrical World",
3561 author = "H. J. Round",
3564 @Article{vashishath08,
3565 title = "Recent trends in silicon carbide device research",
3566 journal = "Mj. Int. J. Sci. Tech.",
3571 author = "Munish Vashishath and Ashoke K. Chatterjee",
3572 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3573 notes = "sic polytype electronic properties",
3577 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3579 title = "Growth and Properties of beta-Si{C} Single Crystals",
3582 journal = "Journal of Applied Physics",
3586 URL = "http://link.aip.org/link/?JAP/37/333/1",
3587 doi = "10.1063/1.1707837",
3588 notes = "sic melt growth",
3592 author = "A. E. van Arkel and J. H. de Boer",
3593 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3595 publisher = "WILEY-VCH Verlag GmbH",
3597 journal = "Z. Anorg. Chem.",
3600 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3601 doi = "10.1002/zaac.19251480133",
3602 notes = "van arkel apparatus",
3606 author = "K. Moers",
3608 journal = "Z. Anorg. Chem.",
3611 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3616 author = "J. T. Kendall",
3617 title = "Electronic Conduction in Silicon Carbide",
3620 journal = "The Journal of Chemical Physics",
3624 URL = "http://link.aip.org/link/?JCP/21/821/1",
3625 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3630 author = "J. A. Lely",
3632 journal = "Ber. Deut. Keram. Ges.",
3635 notes = "lely sublimation growth process",
3638 @Article{knippenberg63,
3639 author = "W. F. Knippenberg",
3641 journal = "Philips Res. Repts.",
3644 notes = "acheson process",
3647 @Article{hoffmann82,
3648 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3651 title = "Silicon carbide blue light emitting diodes with
3652 improved external quantum efficiency",
3655 journal = "Journal of Applied Physics",
3658 pages = "6962--6967",
3659 keywords = "light emitting diodes; silicon carbides; quantum
3660 efficiency; visible radiation; experimental data;
3661 epitaxy; fabrication; medium temperature; layers;
3662 aluminium; nitrogen; substrates; pn junctions;
3663 electroluminescence; spectra; current density;
3665 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3666 doi = "10.1063/1.330041",
3667 notes = "blue led, sublimation process",
3671 author = "Philip Neudeck",
3672 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3673 Road 44135 Cleveland OH",
3674 title = "Progress in silicon carbide semiconductor electronics
3676 journal = "Journal of Electronic Materials",
3677 publisher = "Springer Boston",
3679 keyword = "Chemistry and Materials Science",
3683 URL = "http://dx.doi.org/10.1007/BF02659688",
3684 note = "10.1007/BF02659688",
3686 notes = "sic data, advantages of 3c sic",
3689 @Article{bhatnagar93,
3690 author = "M. Bhatnagar and B. J. Baliga",
3691 journal = "Electron Devices, IEEE Transactions on",
3692 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3699 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3700 rectifiers;Si;SiC;breakdown voltages;drift region
3701 properties;output characteristics;power MOSFETs;power
3702 semiconductor devices;switching characteristics;thermal
3703 analysis;Schottky-barrier diodes;electric breakdown of
3704 solids;insulated gate field effect transistors;power
3705 transistors;semiconductor materials;silicon;silicon
3706 compounds;solid-state rectifiers;thermal analysis;",
3707 doi = "10.1109/16.199372",
3709 notes = "comparison 3c 6h sic and si devices",
3713 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3714 A. Powell and C. S. Salupo and L. G. Matus",
3715 journal = "Electron Devices, IEEE Transactions on",
3716 title = "Electrical properties of epitaxial 3{C}- and
3717 6{H}-Si{C} p-n junction diodes produced side-by-side on
3718 6{H}-Si{C} substrates",
3724 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3725 C;6H-SiC layers;6H-SiC substrates;CVD
3726 process;SiC;chemical vapor deposition;doping;electrical
3727 properties;epitaxial layers;light
3728 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3729 diodes;polytype;rectification characteristics;reverse
3730 leakage current;reverse voltages;temperature;leakage
3731 currents;power electronics;semiconductor
3732 diodes;semiconductor epitaxial layers;semiconductor
3733 growth;semiconductor materials;silicon
3734 compounds;solid-state rectifiers;substrates;vapour
3735 phase epitaxial growth;",
3736 doi = "10.1109/16.285038",
3738 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3743 author = "N. Schulze and D. L. Barrett and G. Pensl",
3745 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3746 single crystals by physical vapor transport",
3749 journal = "Applied Physics Letters",
3752 pages = "1632--1634",
3753 keywords = "silicon compounds; semiconductor materials;
3754 semiconductor growth; crystal growth from vapour;
3755 photoluminescence; Hall mobility",
3756 URL = "http://link.aip.org/link/?APL/72/1632/1",
3757 doi = "10.1063/1.121136",
3758 notes = "micropipe free 6h-sic pvt growth",
3762 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3764 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3767 journal = "Applied Physics Letters",
3771 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3772 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3773 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3774 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3776 URL = "http://link.aip.org/link/?APL/50/221/1",
3777 doi = "10.1063/1.97667",
3778 notes = "apb 3c-sic heteroepitaxy on si",
3781 @Article{shibahara86,
3782 title = "Surface morphology of cubic Si{C}(100) grown on
3783 Si(100) by chemical vapor deposition",
3784 journal = "Journal of Crystal Growth",
3791 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3792 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3793 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3795 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3798 @Article{desjardins96,
3799 author = "P. Desjardins and J. E. Greene",
3801 title = "Step-flow epitaxial growth on two-domain surfaces",
3804 journal = "Journal of Applied Physics",
3807 pages = "1423--1434",
3808 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3809 FILM GROWTH; SURFACE STRUCTURE",
3810 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3811 doi = "10.1063/1.360980",
3812 notes = "apb model",
3816 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3818 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3819 carbonization of silicon",
3822 journal = "Journal of Applied Physics",
3825 pages = "2070--2073",
3826 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3827 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3829 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3830 doi = "10.1063/1.360184",
3831 notes = "ssmbe of sic on si, lower temperatures",
3835 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3836 {MBE} using surface superstructure",
3837 journal = "Journal of Crystal Growth",
3844 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3845 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3846 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3847 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3848 notes = "gas source mbe of 3c-sic on 6h-sic",
3851 @Article{yoshinobu92,
3852 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3853 and Takashi Fuyuki and Hiroyuki Matsunami",
3855 title = "Lattice-matched epitaxial growth of single crystalline
3856 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3857 molecular beam epitaxy",
3860 journal = "Applied Physics Letters",
3864 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3865 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3866 INTERFACE STRUCTURE",
3867 URL = "http://link.aip.org/link/?APL/60/824/1",
3868 doi = "10.1063/1.107430",
3869 notes = "gas source mbe of 3c-sic on 6h-sic",
3872 @Article{yoshinobu90,
3873 title = "Atomic level control in gas source {MBE} growth of
3875 journal = "Journal of Crystal Growth",
3882 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3883 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3884 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3885 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3886 notes = "gas source mbe of 3c-sic on 3c-sic",
3890 title = "Atomic layer epitaxy controlled by surface
3891 superstructures in Si{C}",
3892 journal = "Thin Solid Films",
3899 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3900 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3901 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3903 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3908 title = "Microscopic mechanisms of accurate layer-by-layer
3909 growth of [beta]-Si{C}",
3910 journal = "Thin Solid Films",
3917 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3918 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3919 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3920 and S. Misawa and E. Sakuma and S. Yoshida",
3921 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3926 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3928 title = "Effects of gas flow ratio on silicon carbide thin film
3929 growth mode and polytype formation during gas-source
3930 molecular beam epitaxy",
3933 journal = "Applied Physics Letters",
3936 pages = "2851--2853",
3937 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3938 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3939 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3941 URL = "http://link.aip.org/link/?APL/65/2851/1",
3942 doi = "10.1063/1.112513",
3943 notes = "gas source mbe of 6h-sic on 6h-sic",
3947 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3948 title = "Heterointerface Control and Epitaxial Growth of
3949 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3950 publisher = "WILEY-VCH Verlag",
3952 journal = "physica status solidi (b)",
3955 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3960 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3961 journal = "Journal of Crystal Growth",
3968 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3969 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3970 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3971 keywords = "Reflection high-energy electron diffraction (RHEED)",
3972 keywords = "Scanning electron microscopy (SEM)",
3973 keywords = "Silicon carbide",
3974 keywords = "Silicon",
3975 keywords = "Island growth",
3976 notes = "lower temperature, 550-700",
3979 @Article{hatayama95,
3980 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3981 on Si using hydrocarbon radicals by gas source
3982 molecular beam epitaxy",
3983 journal = "Journal of Crystal Growth",
3990 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3991 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3992 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3993 and Hiroyuki Matsunami",
3997 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3998 title = "The Preference of Silicon Carbide for Growth in the
3999 Metastable Cubic Form",
4000 journal = "Journal of the American Ceramic Society",
4003 publisher = "Blackwell Publishing Ltd",
4005 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4006 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4007 pages = "2630--2633",
4008 keywords = "silicon carbide, crystal growth, crystal structure,
4009 calculations, stability",
4011 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4012 polytype dft calculation refs",
4015 @Article{allendorf91,
4016 title = "The adsorption of {H}-atoms on polycrystalline
4017 [beta]-silicon carbide",
4018 journal = "Surface Science",
4025 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4026 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4027 author = "Mark D. Allendorf and Duane A. Outka",
4028 notes = "h adsorption on 3c-sic",
4031 @Article{eaglesham93,
4032 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4033 D. P. Adams and S. M. Yalisove",
4035 title = "Effect of {H} on Si molecular-beam epitaxy",
4038 journal = "Journal of Applied Physics",
4041 pages = "6615--6618",
4042 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4043 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4044 DIFFUSION; ADSORPTION",
4045 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4046 doi = "10.1063/1.355101",
4047 notes = "h incorporation on si surface, lower surface
4052 author = "Ronald C. Newman",
4053 title = "Carbon in Crystalline Silicon",
4054 journal = "MRS Online Proceedings Library",
4059 doi = "10.1557/PROC-59-403",
4060 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4061 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4065 author = "U. Gösele",
4066 title = "The Role of Carbon and Point Defects in Silicon",
4067 journal = "MRS Online Proceedings Library",
4072 doi = "10.1557/PROC-59-419",
4073 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4074 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4078 title = "Convergence of supercell calculations for point
4079 defects in semiconductors: Vacancy in silicon",
4080 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4082 journal = "Phys. Rev. B",
4085 pages = "1318--1325",
4089 doi = "10.1103/PhysRevB.58.1318",
4090 publisher = "American Physical Society",
4091 notes = "convergence k point supercell size, vacancy in
4096 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4097 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4098 K{\"{o}}gler and W. Skorupa",
4100 title = "Spectroscopic characterization of phases formed by
4101 high-dose carbon ion implantation in silicon",
4104 journal = "Journal of Applied Physics",
4107 pages = "2978--2984",
4108 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4109 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4110 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4111 DEPENDENCE; PRECIPITATES; ANNEALING",
4112 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4113 doi = "10.1063/1.358714",