2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon Carbide Electronic Materials and Devices",
138 journal = "MRS Bull.",
145 author = "G. R. Fisher and P. Barnes",
146 title = "Towards a unified view of polytypism in silicon
148 journal = "Philos. Mag. B",
152 notes = "sic polytypes",
156 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
157 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
158 Serre and A. Perez-Rodriguez",
159 title = "Synthesis of nano-sized Si{C} precipitates in Si by
160 simultaneous dual-beam implantation of {C}+ and Si+
162 journal = "Appl. Phys. A",
167 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
168 notes = "dual implantation, sic prec enhanced by vacancies,
169 precipitation by interstitial and substitutional
170 carbon, both mechanisms explained + refs",
174 title = "Carbon-mediated effects in silicon and in
175 silicon-related materials",
176 journal = "Mater. Chem. Phys.",
183 doi = "DOI: 10.1016/0254-0584(95)01673-I",
184 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
185 author = "W. Skorupa and R. A. Yankov",
186 notes = "review of silicon carbon compound",
190 author = "P. S. de Laplace",
191 title = "Th\'eorie analytique des probabilit\'es",
192 series = "Oeuvres Compl\`etes de Laplace",
194 publisher = "Gauthier-Villars",
198 @Article{mattoni2007,
199 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
200 title = "{Atomistic modeling of brittleness in covalent
202 journal = "Phys. Rev. B",
208 doi = "10.1103/PhysRevB.76.224103",
209 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
210 longe(r)-range-interactions, brittle propagation of
211 fracture, more available potentials, universal energy
212 relation (uer), minimum range model (mrm)",
216 title = "Comparative study of silicon empirical interatomic
218 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
219 journal = "Phys. Rev. B",
222 pages = "2250--2279",
226 doi = "10.1103/PhysRevB.46.2250",
227 publisher = "American Physical Society",
228 notes = "comparison of classical potentials for si",
232 title = "Stress relaxation in $a-Si$ induced by ion
234 author = "H. M. Urbassek M. Koster",
235 journal = "Phys. Rev. B",
238 pages = "11219--11224",
242 doi = "10.1103/PhysRevB.62.11219",
243 publisher = "American Physical Society",
244 notes = "virial derivation for 3-body tersoff potential",
247 @Article{breadmore99,
248 title = "Direct simulation of ion-beam-induced stressing and
249 amorphization of silicon",
250 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
251 journal = "Phys. Rev. B",
254 pages = "12610--12616",
258 doi = "10.1103/PhysRevB.60.12610",
259 publisher = "American Physical Society",
260 notes = "virial derivation for 3-body tersoff potential",
264 title = "First-Principles Calculation of Stress",
265 author = "O. H. Nielsen and Richard M. Martin",
266 journal = "Phys. Rev. Lett.",
273 doi = "10.1103/PhysRevLett.50.697",
274 publisher = "American Physical Society",
275 notes = "generalization of virial theorem",
279 title = "Quantum-mechanical theory of stress and force",
280 author = "O. H. Nielsen and Richard M. Martin",
281 journal = "Phys. Rev. B",
284 pages = "3780--3791",
288 doi = "10.1103/PhysRevB.32.3780",
289 publisher = "American Physical Society",
290 notes = "dft virial stress and forces",
294 author = "Henri Moissan",
295 title = "Nouvelles recherches sur la météorité de Cañon
297 journal = "C. R. Acad. Sci.",
304 author = "Y. S. Park",
305 title = "Si{C} Materials and Devices",
306 publisher = "Academic Press",
307 address = "San Diego",
312 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
313 Calvin H. Carter Jr. and D. Asbury",
314 title = "Si{C} Seeded Boule Growth",
315 journal = "Mater. Sci. Forum",
319 notes = "modified lely process, micropipes",
323 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
324 Thermodynamical Properties of Lennard-Jones Molecules",
325 author = "Loup Verlet",
326 journal = "Phys. Rev.",
332 doi = "10.1103/PhysRev.159.98",
333 publisher = "American Physical Society",
334 notes = "velocity verlet integration algorithm equation of
338 @Article{berendsen84,
339 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
340 Gunsteren and A. DiNola and J. R. Haak",
342 title = "Molecular dynamics with coupling to an external bath",
345 journal = "J. Chem. Phys.",
348 pages = "3684--3690",
349 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
350 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
351 URL = "http://link.aip.org/link/?JCP/81/3684/1",
352 doi = "10.1063/1.448118",
353 notes = "berendsen thermostat barostat",
357 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
359 title = "Molecular dynamics determination of defect energetics
360 in beta -Si{C} using three representative empirical
362 journal = "Modell. Simul. Mater. Sci. Eng.",
366 URL = "http://stacks.iop.org/0965-0393/3/615",
367 notes = "comparison of tersoff, pearson and eam for defect
368 energetics in sic; (m)eam parameters for sic",
373 title = "Relationship between the embedded-atom method and
375 author = "Donald W. Brenner",
376 journal = "Phys. Rev. Lett.",
383 doi = "10.1103/PhysRevLett.63.1022",
384 publisher = "American Physical Society",
385 notes = "relation of tersoff and eam potential",
389 title = "Molecular-dynamics study of self-interstitials in
391 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
392 journal = "Phys. Rev. B",
395 pages = "9552--9558",
399 doi = "10.1103/PhysRevB.35.9552",
400 publisher = "American Physical Society",
401 notes = "selft-interstitials in silicon, stillinger-weber,
402 calculation of defect formation energy, defect
407 title = "Extended interstitials in silicon and germanium",
408 author = "H. R. Schober",
409 journal = "Phys. Rev. B",
412 pages = "13013--13015",
416 doi = "10.1103/PhysRevB.39.13013",
417 publisher = "American Physical Society",
418 notes = "stillinger-weber silicon 110 stable and metastable
419 dumbbell configuration",
423 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
424 Defect accumulation, topological features, and
426 author = "F. Gao and W. J. Weber",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.024106",
435 publisher = "American Physical Society",
436 notes = "sic intro, si cascade in 3c-sic, amorphization,
437 tersoff modified, pair correlation of amorphous sic, md
441 @Article{devanathan98,
442 title = "Computer simulation of a 10 ke{V} Si displacement
444 journal = "Nucl. Instrum. Methods Phys. Res. B",
450 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
451 author = "R. Devanathan and W. J. Weber and T. Diaz de la
453 notes = "modified tersoff short range potential, ab initio
457 @Article{devanathan98_2,
458 title = "Displacement threshold energies in [beta]-Si{C}",
459 journal = "J. Nucl. Mater.",
465 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
466 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
468 notes = "modified tersoff, ab initio, combined ab initio
472 @Article{kitabatake00,
473 title = "Si{C}/Si heteroepitaxial growth",
474 author = "M. Kitabatake",
475 journal = "Thin Solid Films",
480 notes = "md simulation, sic si heteroepitaxy, mbe",
484 title = "Intrinsic point defects in crystalline silicon:
485 Tight-binding molecular dynamics studies of
486 self-diffusion, interstitial-vacancy recombination, and
488 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
490 journal = "Phys. Rev. B",
493 pages = "14279--14289",
497 doi = "10.1103/PhysRevB.55.14279",
498 publisher = "American Physical Society",
499 notes = "si self interstitial, diffusion, tbmd",
503 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
506 title = "A kinetic Monte--Carlo study of the effective
507 diffusivity of the silicon self-interstitial in the
508 presence of carbon and boron",
511 journal = "J. Appl. Phys.",
514 pages = "1963--1967",
515 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
516 CARBON ADDITIONS; BORON ADDITIONS; elemental
517 semiconductors; self-diffusion",
518 URL = "http://link.aip.org/link/?JAP/84/1963/1",
519 doi = "10.1063/1.368328",
520 notes = "kinetic monte carlo of si self interstitial
525 title = "Barrier to Migration of the Silicon
527 author = "Y. Bar-Yam and J. D. Joannopoulos",
528 journal = "Phys. Rev. Lett.",
531 pages = "1129--1132",
535 doi = "10.1103/PhysRevLett.52.1129",
536 publisher = "American Physical Society",
537 notes = "si self-interstitial migration barrier",
540 @Article{bar-yam84_2,
541 title = "Electronic structure and total-energy migration
542 barriers of silicon self-interstitials",
543 author = "Y. Bar-Yam and J. D. Joannopoulos",
544 journal = "Phys. Rev. B",
547 pages = "1844--1852",
551 doi = "10.1103/PhysRevB.30.1844",
552 publisher = "American Physical Society",
556 title = "First-principles calculations of self-diffusion
557 constants in silicon",
558 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
559 and D. B. Laks and W. Andreoni and S. T. Pantelides",
560 journal = "Phys. Rev. Lett.",
563 pages = "2435--2438",
567 doi = "10.1103/PhysRevLett.70.2435",
568 publisher = "American Physical Society",
569 notes = "si self int diffusion by ab initio md, formation
570 entropy calculations",
574 title = "Defect migration in crystalline silicon",
575 author = "Lindsey J. Munro and David J. Wales",
576 journal = "Phys. Rev. B",
579 pages = "3969--3980",
583 doi = "10.1103/PhysRevB.59.3969",
584 publisher = "American Physical Society",
585 notes = "eigenvector following method, vacancy and interstiial
586 defect migration mechanisms",
590 title = "Tight-binding theory of native point defects in
592 author = "L. Colombo",
593 journal = "Annu. Rev. Mater. Res.",
598 doi = "10.1146/annurev.matsci.32.111601.103036",
599 publisher = "Annual Reviews",
600 notes = "si self interstitial, tbmd, virial stress",
603 @Article{al-mushadani03,
604 title = "Free-energy calculations of intrinsic point defects in
606 author = "O. K. Al-Mushadani and R. J. Needs",
607 journal = "Phys. Rev. B",
614 doi = "10.1103/PhysRevB.68.235205",
615 publisher = "American Physical Society",
616 notes = "formation energies of intrinisc point defects in
617 silicon, si self interstitials, free energy",
621 title = "Electronic surface error in the Si interstitial
623 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
625 journal = "Phys. Rev. B",
632 doi = "10.1103/PhysRevB.77.155211",
633 publisher = "American Physical Society",
634 notes = "si self interstitial formation energies by dft",
637 @Article{goedecker02,
638 title = "A Fourfold Coordinated Point Defect in Silicon",
639 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
640 journal = "Phys. Rev. Lett.",
647 doi = "10.1103/PhysRevLett.88.235501",
648 publisher = "American Physical Society",
649 notes = "first time ffcd, fourfold coordinated point defect in
654 title = "Ab initio molecular dynamics simulation of
655 self-interstitial diffusion in silicon",
656 author = "Beat Sahli and Wolfgang Fichtner",
657 journal = "Phys. Rev. B",
664 doi = "10.1103/PhysRevB.72.245210",
665 publisher = "American Physical Society",
666 notes = "si self int, diffusion, barrier height, voronoi
671 title = "Ab initio calculations of the interaction between
672 native point defects in silicon",
673 journal = "Mater. Sci. Eng., B",
678 note = "EMRS 2005, Symposium D - Materials Science and Device
679 Issues for Future Technologies",
681 doi = "DOI: 10.1016/j.mseb.2005.08.072",
682 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
683 author = "G. Hobler and G. Kresse",
684 notes = "vasp intrinsic si defect interaction study, capture
689 title = "Ab initio study of self-diffusion in silicon over a
690 wide temperature range: Point defect states and
691 migration mechanisms",
692 author = "Shangyi Ma and Shaoqing Wang",
693 journal = "Phys. Rev. B",
700 doi = "10.1103/PhysRevB.81.193203",
701 publisher = "American Physical Society",
702 notes = "si self interstitial diffusion + refs",
706 title = "Atomistic simulations on the thermal stability of the
707 antisite pair in 3{C}- and 4{H}-Si{C}",
708 author = "M. Posselt and F. Gao and W. J. Weber",
709 journal = "Phys. Rev. B",
716 doi = "10.1103/PhysRevB.73.125206",
717 publisher = "American Physical Society",
721 title = "Correlation between self-diffusion in Si and the
722 migration mechanisms of vacancies and
723 self-interstitials: An atomistic study",
724 author = "M. Posselt and F. Gao and H. Bracht",
725 journal = "Phys. Rev. B",
732 doi = "10.1103/PhysRevB.78.035208",
733 publisher = "American Physical Society",
734 notes = "si self-interstitial and vacancy diffusion, stillinger
739 title = "Ab initio and empirical-potential studies of defect
740 properties in $3{C}-Si{C}$",
741 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
743 journal = "Phys. Rev. B",
750 doi = "10.1103/PhysRevB.64.245208",
751 publisher = "American Physical Society",
752 notes = "defects in 3c-sic",
756 title = "Empirical potential approach for defect properties in
758 journal = "Nucl. Instrum. Methods Phys. Res. B",
765 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
766 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
767 author = "Fei Gao and William J. Weber",
768 keywords = "Empirical potential",
769 keywords = "Defect properties",
770 keywords = "Silicon carbide",
771 keywords = "Computer simulation",
772 notes = "sic potential, brenner type, like erhart/albe",
776 title = "Atomistic study of intrinsic defect migration in
778 author = "Fei Gao and William J. Weber and M. Posselt and V.
780 journal = "Phys. Rev. B",
787 doi = "10.1103/PhysRevB.69.245205",
788 publisher = "American Physical Society",
789 notes = "defect migration in sic",
793 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
796 title = "Ab Initio atomic simulations of antisite pair recovery
797 in cubic silicon carbide",
800 journal = "Appl. Phys. Lett.",
806 keywords = "ab initio calculations; silicon compounds; antisite
807 defects; wide band gap semiconductors; molecular
808 dynamics method; density functional theory;
809 electron-hole recombination; photoluminescence;
810 impurities; diffusion",
811 URL = "http://link.aip.org/link/?APL/90/221915/1",
812 doi = "10.1063/1.2743751",
815 @Article{mattoni2002,
816 title = "Self-interstitial trapping by carbon complexes in
817 crystalline silicon",
818 author = "A. Mattoni and F. Bernardini and L. Colombo",
819 journal = "Phys. Rev. B",
826 doi = "10.1103/PhysRevB.66.195214",
827 publisher = "American Physical Society",
828 notes = "c in c-si, diffusion, interstitial configuration +
829 links, interaction of carbon and silicon interstitials,
830 tersoff suitability",
834 title = "Calculations of Silicon Self-Interstitial Defects",
835 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
837 journal = "Phys. Rev. Lett.",
840 pages = "2351--2354",
844 doi = "10.1103/PhysRevLett.83.2351",
845 publisher = "American Physical Society",
846 notes = "nice images of the defects, si defect overview +
851 title = "Identification of the migration path of interstitial
853 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
854 journal = "Phys. Rev. B",
857 pages = "7439--7442",
861 doi = "10.1103/PhysRevB.50.7439",
862 publisher = "American Physical Society",
863 notes = "carbon interstitial migration path shown, 001 c-si
868 title = "Theory of carbon-carbon pairs in silicon",
869 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
870 journal = "Phys. Rev. B",
873 pages = "9845--9850",
877 doi = "10.1103/PhysRevB.58.9845",
878 publisher = "American Physical Society",
879 notes = "c_i c_s pair configuration, theoretical results",
883 title = "Bistable interstitial-carbon--substitutional-carbon
885 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
887 journal = "Phys. Rev. B",
890 pages = "5765--5783",
894 doi = "10.1103/PhysRevB.42.5765",
895 publisher = "American Physical Society",
896 notes = "c_i c_s pair configuration, experimental results",
900 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
901 Shifeng Lu and Xiang-Yang Liu",
903 title = "Ab initio modeling and experimental study of {C}--{B}
907 journal = "Appl. Phys. Lett.",
911 keywords = "silicon; boron; carbon; elemental semiconductors;
912 impurity-defect interactions; ab initio calculations;
913 secondary ion mass spectra; diffusion; interstitials",
914 URL = "http://link.aip.org/link/?APL/80/52/1",
915 doi = "10.1063/1.1430505",
916 notes = "c-c 100 split, lower as a and b states of capaz",
920 title = "Ab initio investigation of carbon-related defects in
922 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
924 journal = "Phys. Rev. B",
927 pages = "12554--12557",
931 doi = "10.1103/PhysRevB.47.12554",
932 publisher = "American Physical Society",
933 notes = "c interstitials in crystalline silicon",
937 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
939 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
940 Sokrates T. Pantelides",
941 journal = "Phys. Rev. Lett.",
944 pages = "1814--1817",
948 doi = "10.1103/PhysRevLett.52.1814",
949 publisher = "American Physical Society",
950 notes = "microscopic theory diffusion silicon dft migration
955 title = "Unified Approach for Molecular Dynamics and
956 Density-Functional Theory",
957 author = "R. Car and M. Parrinello",
958 journal = "Phys. Rev. Lett.",
961 pages = "2471--2474",
965 doi = "10.1103/PhysRevLett.55.2471",
966 publisher = "American Physical Society",
967 notes = "car parrinello method, dft and md",
971 title = "Short-range order, bulk moduli, and physical trends in
972 c-$Si1-x$$Cx$ alloys",
973 author = "P. C. Kelires",
974 journal = "Phys. Rev. B",
977 pages = "8784--8787",
981 doi = "10.1103/PhysRevB.55.8784",
982 publisher = "American Physical Society",
983 notes = "c strained si, montecarlo md, bulk moduli, next
988 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
989 Application to the $Si1-x-yGexCy$ System",
990 author = "P. C. Kelires",
991 journal = "Phys. Rev. Lett.",
994 pages = "1114--1117",
998 doi = "10.1103/PhysRevLett.75.1114",
999 publisher = "American Physical Society",
1000 notes = "mc md, strain compensation in si ge by c insertion",
1004 title = "Low temperature electron irradiation of silicon
1006 journal = "Solid State Commun.",
1013 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1014 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1015 author = "A. R. Bean and R. C. Newman",
1019 author = "F. Durand and J. Duby",
1020 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1021 title = "Carbon solubility in solid and liquid silicon—{A}
1022 review with reference to eutectic equilibrium",
1023 journal = "Journal of Phase Equilibria",
1024 publisher = "Springer New York",
1026 keyword = "Chemistry and Materials Science",
1030 URL = "http://dx.doi.org/10.1361/105497199770335956",
1031 note = "10.1361/105497199770335956",
1033 notes = "better c solubility limit in silicon",
1037 title = "{EPR} Observation of the Isolated Interstitial Carbon
1039 author = "G. D. Watkins and K. L. Brower",
1040 journal = "Phys. Rev. Lett.",
1043 pages = "1329--1332",
1047 doi = "10.1103/PhysRevLett.36.1329",
1048 publisher = "American Physical Society",
1049 notes = "epr observations of 100 interstitial carbon atom in
1054 title = "{EPR} identification of the single-acceptor state of
1055 interstitial carbon in silicon",
1056 author = "L. W. Song and G. D. Watkins",
1057 journal = "Phys. Rev. B",
1060 pages = "5759--5764",
1064 doi = "10.1103/PhysRevB.42.5759",
1065 publisher = "American Physical Society",
1066 notes = "carbon diffusion in silicon",
1070 author = "A K Tipping and R C Newman",
1071 title = "The diffusion coefficient of interstitial carbon in
1073 journal = "Semicond. Sci. Technol.",
1077 URL = "http://stacks.iop.org/0268-1242/2/315",
1079 notes = "diffusion coefficient of carbon interstitials in
1084 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1087 title = "Annealing behavior of Me{V} implanted carbon in
1091 journal = "J. Appl. Phys.",
1094 pages = "3815--3820",
1095 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1096 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1098 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1099 doi = "10.1063/1.354474",
1100 notes = "c at interstitial location for rt implantation in si",
1104 title = "Carbon incorporation into Si at high concentrations by
1105 ion implantation and solid phase epitaxy",
1106 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1107 Picraux and J. K. Watanabe and J. W. Mayer",
1108 journal = "J. Appl. Phys.",
1113 doi = "10.1063/1.360806",
1114 notes = "strained silicon, carbon supersaturation",
1117 @Article{laveant2002,
1118 title = "Epitaxy of carbon-rich silicon with {MBE}",
1119 journal = "Mater. Sci. Eng., B",
1125 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1126 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1127 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1129 notes = "low c in si, tensile stress to compensate compressive
1130 stress, avoid sic precipitation",
1134 title = "The formation of swirl defects in silicon by
1135 agglomeration of self-interstitials",
1136 journal = "J. Cryst. Growth",
1143 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1144 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1145 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1146 notes = "b-swirl: si + c interstitial agglomerates, c-si
1151 title = "Microdefects in silicon and their relation to point
1153 journal = "J. Cryst. Growth",
1160 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1161 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1162 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1163 notes = "swirl review",
1167 author = "P. Werner and S. Eichler and G. Mariani and R.
1168 K{\"{o}}gler and W. Skorupa",
1169 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1170 silicon by transmission electron microscopy",
1173 journal = "Appl. Phys. Lett.",
1177 keywords = "silicon; ion implantation; carbon; crystal defects;
1178 transmission electron microscopy; annealing; positron
1179 annihilation; secondary ion mass spectroscopy; buried
1180 layers; precipitation",
1181 URL = "http://link.aip.org/link/?APL/70/252/1",
1182 doi = "10.1063/1.118381",
1183 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1187 @InProceedings{werner96,
1188 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1190 booktitle = "Proceedings of the 11th International Conference on
1191 Ion Implantation Technology.",
1192 title = "{TEM} investigation of {C}-Si defects in carbon
1199 doi = "10.1109/IIT.1996.586497",
1201 notes = "c-si agglomerates dumbbells",
1205 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1208 title = "Carbon diffusion in silicon",
1211 journal = "Appl. Phys. Lett.",
1214 pages = "2465--2467",
1215 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1216 secondary ion mass spectra; semiconductor epitaxial
1217 layers; annealing; impurity-defect interactions;
1218 impurity distribution",
1219 URL = "http://link.aip.org/link/?APL/73/2465/1",
1220 doi = "10.1063/1.122483",
1221 notes = "c diffusion in si, kick out mechnism",
1225 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1227 title = "Self-interstitial enhanced carbon diffusion in
1231 journal = "Appl. Phys. Lett.",
1235 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1236 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1237 TEMPERATURE; IMPURITIES",
1238 URL = "http://link.aip.org/link/?APL/45/268/1",
1239 doi = "10.1063/1.95167",
1240 notes = "c diffusion due to si self-interstitials",
1244 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1247 title = "Characterization of SiGe/Si heterostructures formed by
1248 Ge[sup + ] and {C}[sup + ] implantation",
1251 journal = "Appl. Phys. Lett.",
1254 pages = "2345--2347",
1255 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1256 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1257 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1258 EPITAXY; CARBON IONS; GERMANIUM IONS",
1259 URL = "http://link.aip.org/link/?APL/57/2345/1",
1260 doi = "10.1063/1.103888",
1264 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1265 Doyle and S. T. Picraux and J. W. Mayer",
1267 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1270 journal = "Appl. Phys. Lett.",
1273 pages = "2786--2788",
1274 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1275 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1276 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1277 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1278 EPITAXY; AMORPHIZATION",
1279 URL = "http://link.aip.org/link/?APL/63/2786/1",
1280 doi = "10.1063/1.110334",
1284 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1285 Legoues and J. Angilello and F. Cardone",
1287 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1288 strained layer superlattices",
1291 journal = "Appl. Phys. Lett.",
1294 pages = "2758--2760",
1295 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1296 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1297 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1298 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1299 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1300 URL = "http://link.aip.org/link/?APL/60/2758/1",
1301 doi = "10.1063/1.106868",
1305 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1306 Picraux and J. K. Watanabe and J. W. Mayer",
1308 title = "Precipitation and relaxation in strained Si[sub 1 -
1309 y]{C}[sub y]/Si heterostructures",
1312 journal = "J. Appl. Phys.",
1315 pages = "3656--3668",
1316 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1317 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1318 doi = "10.1063/1.357429",
1319 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1320 precipitation by substitutional carbon, coherent prec,
1321 coherent to incoherent transition strain vs interface
1326 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1329 title = "Investigation of the high temperature behavior of
1330 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1333 journal = "J. Appl. Phys.",
1336 pages = "1934--1937",
1337 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1338 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1339 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1340 TEMPERATURE RANGE 04001000 K",
1341 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1342 doi = "10.1063/1.358826",
1346 title = "Prospects for device implementation of wide band gap
1348 author = "J. H. Edgar",
1349 journal = "J. Mater. Res.",
1354 doi = "10.1557/JMR.1992.0235",
1355 notes = "properties wide band gap semiconductor, sic
1359 @Article{zirkelbach2007,
1360 title = "Monte Carlo simulation study of a selforganisation
1361 process leading to ordered precipitate structures",
1362 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1364 journal = "Nucl. Instr. and Meth. B",
1371 doi = "doi:10.1016/j.nimb.2006.12.118",
1372 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1374 abstract = "Periodically arranged, selforganised, nanometric,
1375 amorphous precipitates have been observed after
1376 high-fluence ion implantations into solids for a number
1377 of ion/target combinations at certain implantation
1378 conditions. A model describing the ordering process
1379 based on compressive stress exerted by the amorphous
1380 inclusions as a result of the density change upon
1381 amorphisation is introduced. A Monte Carlo simulation
1382 code, which focuses on high-fluence carbon
1383 implantations into silicon, is able to reproduce
1384 experimentally observed nanolamella distributions as
1385 well as the formation of continuous amorphous layers.
1386 By means of simulation, the selforganisation process
1387 becomes traceable and detailed information about the
1388 compositional and structural state during the ordering
1389 process is obtained. Based on simulation results, a
1390 recipe is proposed for producing broad distributions of
1391 ordered lamellar structures.",
1394 @Article{zirkelbach2006,
1395 title = "Monte-Carlo simulation study of the self-organization
1396 of nanometric amorphous precipitates in regular arrays
1397 during ion irradiation",
1398 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1400 journal = "Nucl. Instr. and Meth. B",
1407 doi = "doi:10.1016/j.nimb.2005.08.162",
1408 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1410 abstract = "High-dose ion implantation of materials that undergo
1411 drastic density change upon amorphization at certain
1412 implantation conditions results in periodically
1413 arranged, self-organized, nanometric configurations of
1414 the amorphous phase. A simple model explaining the
1415 phenomenon is introduced and implemented in a
1416 Monte-Carlo simulation code. Through simulation
1417 conditions for observing lamellar precipitates are
1418 specified and additional information about the
1419 compositional and structural state during the ordering
1420 process is gained.",
1423 @Article{zirkelbach2005,
1424 title = "Modelling of a selforganization process leading to
1425 periodic arrays of nanometric amorphous precipitates by
1427 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1429 journal = "Comp. Mater. Sci.",
1436 doi = "doi:10.1016/j.commatsci.2004.12.016",
1437 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1439 abstract = "Ion irradiation of materials, which undergo a drastic
1440 density change upon amorphization have been shown to
1441 exhibit selforganized, nanometric structures of the
1442 amorphous phase in the crystalline host lattice. In
1443 order to better understand the process a
1444 Monte-Carlo-simulation code based on a simple model is
1445 developed. In the present work we focus on high-dose
1446 carbon implantations into silicon. The simulation is
1447 able to reproduce results gained by cross-sectional TEM
1448 measurements of high-dose carbon implanted silicon.
1449 Necessary conditions can be specified for the
1450 self-organization process and information is gained
1451 about the compositional and structural state during the
1452 ordering process which is difficult to be obtained by
1456 @Article{zirkelbach09,
1457 title = "Molecular dynamics simulation of defect formation and
1458 precipitation in heavily carbon doped silicon",
1459 journal = "Mater. Sci. Eng., B",
1464 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1465 Silicon Materials Research for Electronic and
1466 Photovoltaic Applications",
1468 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1469 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1470 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1472 keywords = "Silicon",
1473 keywords = "Carbon",
1474 keywords = "Silicon carbide",
1475 keywords = "Nucleation",
1476 keywords = "Defect formation",
1477 keywords = "Molecular dynamics simulations",
1478 abstract = "The precipitation process of silicon carbide in
1479 heavily carbon doped silicon is not yet fully
1480 understood. High resolution transmission electron
1481 microscopy observations suggest that in a first step
1482 carbon atoms form C-Si dumbbells on regular Si lattice
1483 sites which agglomerate into large clusters. In a
1484 second step, when the cluster size reaches a radius of
1485 a few nm, the high interfacial energy due to the SiC/Si
1486 lattice misfit of almost 20\% is overcome and the
1487 precipitation occurs. By simulation, details of the
1488 precipitation process can be obtained on the atomic
1489 level. A recently proposed parametrization of a
1490 Tersoff-like bond order potential is used to model the
1491 system appropriately. Preliminary results gained by
1492 molecular dynamics simulations using this potential are
1496 @Article{zirkelbach10,
1497 title = "Defects in carbon implanted silicon calculated by
1498 classical potentials and first-principles methods",
1499 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1500 K. N. Lindner and W. G. Schmidt and E. Rauls",
1501 journal = "Phys. Rev. B",
1508 doi = "10.1103/PhysRevB.82.094110",
1509 publisher = "American Physical Society",
1510 abstract = "A comparative theoretical investigation of carbon
1511 interstitials in silicon is presented. Calculations
1512 using classical potentials are compared to
1513 first-principles density-functional theory calculations
1514 of the geometries, formation, and activation energies
1515 of the carbon dumbbell interstitial, showing the
1516 importance of a quantum-mechanical description of this
1517 system. In contrast to previous studies, the present
1518 first-principles calculations of the interstitial
1519 carbon migration path yield an activation energy that
1520 excellently matches the experiment. The bond-centered
1521 interstitial configuration shows a net magnetization of
1522 two electrons, illustrating the need for spin-polarized
1526 @Article{zirkelbach11,
1527 title = "Combined ab initio and classical potential simulation
1528 study on the silicon carbide precipitation in silicon",
1529 journal = "accepted for publication in Phys. Rev. B",
1534 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1535 K. N. Lindner and W. G. Schmidt and E. Rauls",
1536 abstract = "Atomistic simulations on the silicon carbide
1537 precipitation in bulk silicon employing both, classical
1538 potential and first-principles methods are presented.
1539 The calculations aim at a comprehensive, microscopic
1540 understanding of the precipitation mechanism in the
1541 context of controversial discussions in the literature.
1542 For the quantum-mechanical treatment, basic processes
1543 assumed in the precipitation process are calculated in
1544 feasible systems of small size. The migration mechanism
1545 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1546 1 0> self-interstitial in otherwise defect-free silicon
1547 are investigated using density functional theory
1548 calculations. The influence of a nearby vacancy,
1549 another carbon interstitial and a substitutional defect
1550 as well as a silicon self-interstitial has been
1551 investigated systematically. Interactions of various
1552 combinations of defects have been characterized
1553 including a couple of selected migration pathways
1554 within these configurations. Almost all of the
1555 investigated pairs of defects tend to agglomerate
1556 allowing for a reduction in strain. The formation of
1557 structures involving strong carbon-carbon bonds turns
1558 out to be very unlikely. In contrast, substitutional
1559 carbon occurs in all probability. A long range capture
1560 radius has been observed for pairs of interstitial
1561 carbon as well as interstitial carbon and vacancies. A
1562 rather small capture radius is predicted for
1563 substitutional carbon and silicon self-interstitials.
1564 Initial assumptions regarding the precipitation
1565 mechanism of silicon carbide in bulk silicon are
1566 established and conformability to experimental findings
1567 is discussed. Furthermore, results of the accurate
1568 first-principles calculations on defects and carbon
1569 diffusion in silicon are compared to results of
1570 classical potential simulations revealing significant
1571 limitations of the latter method. An approach to work
1572 around this problem is proposed. Finally, results of
1573 the classical potential molecular dynamics simulations
1574 of large systems are examined, which reinforce previous
1575 assumptions and give further insight into basic
1576 processes involved in the silicon carbide transition.",
1580 author = "J. K. N. Lindner and A. Frohnwieser and B.
1581 Rauschenbach and B. Stritzker",
1582 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1584 journal = "MRS Proc.",
1589 doi = "10.1557/PROC-354-171",
1590 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1591 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1592 notes = "first time ibs at moderate temperatures",
1596 title = "Formation of buried epitaxial silicon carbide layers
1597 in silicon by ion beam synthesis",
1598 journal = "Mater. Chem. Phys.",
1605 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1606 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1607 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1608 Götz and A. Frohnwieser and B. Rauschenbach and B.
1610 notes = "dose window",
1613 @Article{calcagno96,
1614 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1616 journal = "Nucl. Instrum. Methods Phys. Res. B",
1621 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1622 New Trends in Ion Beam Processing of Materials",
1624 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1625 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1626 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1627 Grimaldi and P. Musumeci",
1628 notes = "dose window, graphitic bonds",
1632 title = "Mechanisms of Si{C} Formation in the Ion Beam
1633 Synthesis of 3{C}-Si{C} Layers in Silicon",
1634 journal = "Mater. Sci. Forum",
1639 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1640 URL = "http://www.scientific.net/MSF.264-268.215",
1641 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1642 notes = "intermediate temperature for sharp interface + good
1647 title = "Controlling the density distribution of Si{C}
1648 nanocrystals for the ion beam synthesis of buried Si{C}
1650 journal = "Nucl. Instrum. Methods Phys. Res. B",
1657 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1658 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1659 author = "J. K. N. Lindner and B. Stritzker",
1660 notes = "two-step implantation process",
1663 @Article{lindner99_2,
1664 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1666 journal = "Nucl. Instrum. Methods Phys. Res. B",
1672 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1673 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1674 author = "J. K. N. Lindner and B. Stritzker",
1675 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1679 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1680 Basic physical processes",
1681 journal = "Nucl. Instrum. Methods Phys. Res. B",
1688 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1689 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1690 author = "J{\"{o}}rg K. N. Lindner",
1694 title = "High-dose carbon implantations into silicon:
1695 fundamental studies for new technological tricks",
1696 author = "J. K. N. Lindner",
1697 journal = "Appl. Phys. A",
1701 doi = "10.1007/s00339-002-2062-8",
1702 notes = "ibs, burried sic layers",
1706 title = "On the balance between ion beam induced nanoparticle
1707 formation and displacive precipitate resolution in the
1709 journal = "Mater. Sci. Eng., C",
1714 note = "Current Trends in Nanoscience - from Materials to
1717 doi = "DOI: 10.1016/j.msec.2005.09.099",
1718 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1719 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1721 notes = "c int diffusion barrier",
1725 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1726 application in buffer layer for Ga{N} epitaxial
1728 journal = "Appl. Surf. Sci.",
1733 note = "APHYS'03 Special Issue",
1735 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1736 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1737 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1738 and S. Nishio and K. Yasuda and Y. Ishigami",
1739 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1742 @Article{yamamoto04,
1743 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1744 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1745 implantation into Si(1 1 1) substrate",
1746 journal = "J. Cryst. Growth",
1751 note = "Proceedings of the 11th Biennial (US) Workshop on
1752 Organometallic Vapor Phase Epitaxy (OMVPE)",
1754 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1755 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1756 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1757 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1758 notes = "gan on 3c-sic",
1762 title = "Substrates for gallium nitride epitaxy",
1763 journal = "Mater. Sci. Eng., R",
1770 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1771 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1772 author = "L. Liu and J. H. Edgar",
1773 notes = "gan substrates",
1776 @Article{takeuchi91,
1777 title = "Growth of single crystalline Ga{N} film on Si
1778 substrate using 3{C}-Si{C} as an intermediate layer",
1779 journal = "J. Cryst. Growth",
1786 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1787 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1788 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1789 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1790 notes = "gan on 3c-sic (first time?)",
1794 author = "B. J. Alder and T. E. Wainwright",
1795 title = "Phase Transition for a Hard Sphere System",
1798 journal = "J. Chem. Phys.",
1801 pages = "1208--1209",
1802 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1803 doi = "10.1063/1.1743957",
1807 author = "B. J. Alder and T. E. Wainwright",
1808 title = "Studies in Molecular Dynamics. {I}. General Method",
1811 journal = "J. Chem. Phys.",
1815 URL = "http://link.aip.org/link/?JCP/31/459/1",
1816 doi = "10.1063/1.1730376",
1819 @Article{horsfield96,
1820 title = "Bond-order potentials: Theory and implementation",
1821 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1822 D. G. Pettifor and M. Aoki",
1823 journal = "Phys. Rev. B",
1826 pages = "12694--12712",
1830 doi = "10.1103/PhysRevB.53.12694",
1831 publisher = "American Physical Society",
1835 title = "Empirical chemical pseudopotential theory of molecular
1836 and metallic bonding",
1837 author = "G. C. Abell",
1838 journal = "Phys. Rev. B",
1841 pages = "6184--6196",
1845 doi = "10.1103/PhysRevB.31.6184",
1846 publisher = "American Physical Society",
1849 @Article{tersoff_si1,
1850 title = "New empirical model for the structural properties of
1852 author = "J. Tersoff",
1853 journal = "Phys. Rev. Lett.",
1860 doi = "10.1103/PhysRevLett.56.632",
1861 publisher = "American Physical Society",
1865 title = "Development of a many-body Tersoff-type potential for
1867 author = "Brian W. Dodson",
1868 journal = "Phys. Rev. B",
1871 pages = "2795--2798",
1875 doi = "10.1103/PhysRevB.35.2795",
1876 publisher = "American Physical Society",
1879 @Article{tersoff_si2,
1880 title = "New empirical approach for the structure and energy of
1882 author = "J. Tersoff",
1883 journal = "Phys. Rev. B",
1886 pages = "6991--7000",
1890 doi = "10.1103/PhysRevB.37.6991",
1891 publisher = "American Physical Society",
1894 @Article{tersoff_si3,
1895 title = "Empirical interatomic potential for silicon with
1896 improved elastic properties",
1897 author = "J. Tersoff",
1898 journal = "Phys. Rev. B",
1901 pages = "9902--9905",
1905 doi = "10.1103/PhysRevB.38.9902",
1906 publisher = "American Physical Society",
1910 title = "Empirical Interatomic Potential for Carbon, with
1911 Applications to Amorphous Carbon",
1912 author = "J. Tersoff",
1913 journal = "Phys. Rev. Lett.",
1916 pages = "2879--2882",
1920 doi = "10.1103/PhysRevLett.61.2879",
1921 publisher = "American Physical Society",
1925 title = "Modeling solid-state chemistry: Interatomic potentials
1926 for multicomponent systems",
1927 author = "J. Tersoff",
1928 journal = "Phys. Rev. B",
1931 pages = "5566--5568",
1935 doi = "10.1103/PhysRevB.39.5566",
1936 publisher = "American Physical Society",
1940 title = "Carbon defects and defect reactions in silicon",
1941 author = "J. Tersoff",
1942 journal = "Phys. Rev. Lett.",
1945 pages = "1757--1760",
1949 doi = "10.1103/PhysRevLett.64.1757",
1950 publisher = "American Physical Society",
1954 title = "Point defects and dopant diffusion in silicon",
1955 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1956 journal = "Rev. Mod. Phys.",
1963 doi = "10.1103/RevModPhys.61.289",
1964 publisher = "American Physical Society",
1968 title = "Silicon carbide: synthesis and processing",
1969 journal = "Nucl. Instrum. Methods Phys. Res. B",
1974 note = "Radiation Effects in Insulators",
1976 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1977 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1978 author = "W. Wesch",
1982 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1983 Palmour and J. A. Edmond",
1984 journal = "Proc. IEEE",
1985 title = "Thin film deposition and microelectronic and
1986 optoelectronic device fabrication and characterization
1987 in monocrystalline alpha and beta silicon carbide",
1993 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1994 diode;SiC;dry etching;electrical
1995 contacts;etching;impurity incorporation;optoelectronic
1996 device fabrication;solid-state devices;surface
1997 chemistry;Schottky effect;Schottky gate field effect
1998 transistors;Schottky-barrier
1999 diodes;etching;heterojunction bipolar
2000 transistors;insulated gate field effect
2001 transistors;light emitting diodes;semiconductor
2002 materials;semiconductor thin films;silicon compounds;",
2003 doi = "10.1109/5.90132",
2005 notes = "sic growth methods",
2009 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2010 Lin and B. Sverdlov and M. Burns",
2012 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2013 ZnSe-based semiconductor device technologies",
2016 journal = "J. Appl. Phys.",
2019 pages = "1363--1398",
2020 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2021 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2022 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2024 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2025 doi = "10.1063/1.358463",
2026 notes = "sic intro, properties",
2030 author = "Noch Unbekannt",
2031 title = "How to find references",
2032 journal = "Journal of Applied References",
2039 title = "Atomistic simulation of thermomechanical properties of
2041 author = "Meijie Tang and Sidney Yip",
2042 journal = "Phys. Rev. B",
2045 pages = "15150--15159",
2048 doi = "10.1103/PhysRevB.52.15150",
2049 notes = "modified tersoff, scale cutoff with volume, promising
2050 tersoff reparametrization",
2051 publisher = "American Physical Society",
2055 title = "Silicon carbide as a new {MEMS} technology",
2056 journal = "Seonsor. Actuator. A",
2062 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2063 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2064 author = "Pasqualina M. Sarro",
2066 keywords = "Silicon carbide",
2067 keywords = "Micromachining",
2068 keywords = "Mechanical stress",
2072 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2073 semiconductor for high-temperature applications: {A}
2075 journal = "Solid-State Electron.",
2078 pages = "1409--1422",
2081 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2082 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2083 author = "J. B. Casady and R. W. Johnson",
2084 notes = "sic intro",
2087 @Article{giancarli98,
2088 title = "Design requirements for Si{C}/Si{C} composites
2089 structural material in fusion power reactor blankets",
2090 journal = "Fusion Eng. Des.",
2096 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2097 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2098 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2099 Marois and N. B. Morley and J. F. Salavy",
2103 title = "Electrical and optical characterization of Si{C}",
2104 journal = "Physica B",
2110 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2111 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2112 author = "G. Pensl and W. J. Choyke",
2116 title = "Investigation of growth processes of ingots of silicon
2117 carbide single crystals",
2118 journal = "J. Cryst. Growth",
2123 notes = "modified lely process",
2125 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2126 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2127 author = "Yu. M. Tairov and V. F. Tsvetkov",
2131 title = "General principles of growing large-size single
2132 crystals of various silicon carbide polytypes",
2133 journal = "J. Cryst. Growth",
2140 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2141 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2142 author = "Yu.M. Tairov and V. F. Tsvetkov",
2146 title = "Si{C} boule growth by sublimation vapor transport",
2147 journal = "J. Cryst. Growth",
2154 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2156 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2157 R. H. Hopkins and W. J. Choyke",
2161 title = "Growth of large Si{C} single crystals",
2162 journal = "J. Cryst. Growth",
2169 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2170 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2171 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2172 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2177 title = "Control of polytype formation by surface energy
2178 effects during the growth of Si{C} monocrystals by the
2179 sublimation method",
2180 journal = "J. Cryst. Growth",
2187 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2188 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2189 author = "R. A. Stein and P. Lanig",
2190 notes = "6h and 4h, sublimation technique",
2194 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2197 title = "Production of large-area single-crystal wafers of
2198 cubic Si{C} for semiconductor devices",
2201 journal = "Appl. Phys. Lett.",
2205 keywords = "silicon carbides; layers; chemical vapor deposition;
2207 URL = "http://link.aip.org/link/?APL/42/460/1",
2208 doi = "10.1063/1.93970",
2209 notes = "cvd of 3c-sic on si, sic buffer layer",
2213 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2214 and Hiroyuki Matsunami",
2216 title = "Epitaxial growth and electric characteristics of cubic
2220 journal = "J. Appl. Phys.",
2223 pages = "4889--4893",
2224 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2225 doi = "10.1063/1.338355",
2226 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2231 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2233 title = "Growth and Characterization of Cubic Si{C}
2234 Single-Crystal Films on Si",
2237 journal = "J. Electrochem. Soc.",
2240 pages = "1558--1565",
2241 keywords = "semiconductor materials; silicon compounds; carbon
2242 compounds; crystal morphology; electron mobility",
2243 URL = "http://link.aip.org/link/?JES/134/1558/1",
2244 doi = "10.1149/1.2100708",
2245 notes = "blue light emitting diodes (led)",
2248 @Article{powell87_2,
2249 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2250 C. M. Chorey and T. T. Cheng and P. Pirouz",
2252 title = "Improved beta-Si{C} heteroepitaxial films using
2253 off-axis Si substrates",
2256 journal = "Appl. Phys. Lett.",
2260 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2261 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2262 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2263 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2264 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2265 URL = "http://link.aip.org/link/?APL/51/823/1",
2266 doi = "10.1063/1.98824",
2267 notes = "improved sic on off-axis si substrates, reduced apbs",
2271 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2272 journal = "J. Cryst. Growth",
2279 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2280 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2281 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2283 notes = "step-controlled epitaxy model",
2287 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2288 and Hiroyuki Matsunami",
2289 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2293 journal = "J. Appl. Phys.",
2297 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2298 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2300 URL = "http://link.aip.org/link/?JAP/73/726/1",
2301 doi = "10.1063/1.353329",
2302 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2305 @Article{powell90_2,
2306 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2307 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2308 Yoganathan and J. Yang and P. Pirouz",
2310 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2311 vicinal (0001) 6{H}-Si{C} wafers",
2314 journal = "Appl. Phys. Lett.",
2317 pages = "1442--1444",
2318 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2319 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2320 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2321 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2322 URL = "http://link.aip.org/link/?APL/56/1442/1",
2323 doi = "10.1063/1.102492",
2324 notes = "cvd of 6h-sic on 6h-sic",
2328 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2330 title = "Chemical vapor deposition and characterization of
2331 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2335 journal = "J. Appl. Phys.",
2338 pages = "2672--2679",
2339 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2340 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2341 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2342 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2343 PHASE EPITAXY; CRYSTAL ORIENTATION",
2344 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2345 doi = "10.1063/1.341608",
2349 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2350 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2351 Yoganathan and J. Yang and P. Pirouz",
2353 title = "Growth of improved quality 3{C}-Si{C} films on
2354 6{H}-Si{C} substrates",
2357 journal = "Appl. Phys. Lett.",
2360 pages = "1353--1355",
2361 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2362 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2363 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2365 URL = "http://link.aip.org/link/?APL/56/1353/1",
2366 doi = "10.1063/1.102512",
2367 notes = "cvd of 3c-sic on 6h-sic",
2371 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2372 Rozgonyi and K. L. More",
2374 title = "An examination of double positioning boundaries and
2375 interface misfit in beta-Si{C} films on alpha-Si{C}
2379 journal = "J. Appl. Phys.",
2382 pages = "2645--2650",
2383 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2384 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2385 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2386 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2387 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2388 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2389 doi = "10.1063/1.341004",
2393 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2394 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2395 and W. J. Choyke and L. Clemen and M. Yoganathan",
2397 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2398 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2401 journal = "Appl. Phys. Lett.",
2405 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2406 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2407 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2408 URL = "http://link.aip.org/link/?APL/59/333/1",
2409 doi = "10.1063/1.105587",
2413 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2414 Thokala and M. J. Loboda",
2416 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2417 films on 6{H}-Si{C} by chemical vapor deposition from
2421 journal = "J. Appl. Phys.",
2424 pages = "1271--1273",
2425 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2426 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2428 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2429 doi = "10.1063/1.360368",
2430 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2434 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2435 properties of its p-n junction",
2436 journal = "J. Cryst. Growth",
2443 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2444 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2445 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2447 notes = "first time ssmbe of 3c-sic on 6h-sic",
2451 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2452 [alpha]-Si{C}(0001) at low temperatures by solid-source
2453 molecular beam epitaxy",
2454 journal = "J. Cryst. Growth",
2460 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2461 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2462 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2463 Schr{\"{o}}ter and W. Richter",
2464 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2467 @Article{fissel95_apl,
2468 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2470 title = "Low-temperature growth of Si{C} thin films on Si and
2471 6{H}--Si{C} by solid-source molecular beam epitaxy",
2474 journal = "Appl. Phys. Lett.",
2477 pages = "3182--3184",
2478 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2480 URL = "http://link.aip.org/link/?APL/66/3182/1",
2481 doi = "10.1063/1.113716",
2482 notes = "mbe 3c-sic on si and 6h-sic",
2486 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2487 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2489 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2490 migration enhanced epitaxy controlled to an atomic
2491 level using surface superstructures",
2494 journal = "Appl. Phys. Lett.",
2497 pages = "1204--1206",
2498 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2499 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2501 URL = "http://link.aip.org/link/?APL/68/1204/1",
2502 doi = "10.1063/1.115969",
2503 notes = "ss mbe sic, superstructure, reconstruction",
2507 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2508 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2509 C. M. Bertoni and A. Catellani",
2510 journal = "Phys. Rev. Lett.",
2517 doi = "10.1103/PhysRevLett.91.136101",
2518 publisher = "American Physical Society",
2519 notes = "dft calculations mbe sic growth",
2523 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2525 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2529 journal = "Appl. Phys. Lett.",
2533 URL = "http://link.aip.org/link/?APL/18/509/1",
2534 doi = "10.1063/1.1653516",
2535 notes = "first time sic by ibs, follow cites for precipitation
2540 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2541 and E. V. Lubopytova",
2542 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2543 by ion implantation",
2544 publisher = "Taylor \& Francis",
2546 journal = "Radiat. Eff.",
2550 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2551 notes = "3c-sic for different temperatures, amorphous, poly,
2552 single crystalline",
2555 @Article{akimchenko80,
2556 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2557 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2558 title = "Structure and optical properties of silicon implanted
2559 by high doses of 70 and 310 ke{V} carbon ions",
2560 publisher = "Taylor \& Francis",
2562 journal = "Radiat. Eff.",
2566 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2567 notes = "3c-sic nucleation by thermal spikes",
2571 title = "Structure and annealing properties of silicon carbide
2572 thin layers formed by implantation of carbon ions in
2574 journal = "Thin Solid Films",
2581 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2582 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2583 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2588 title = "Characteristics of the synthesis of [beta]-Si{C} by
2589 the implantation of carbon ions into silicon",
2590 journal = "Thin Solid Films",
2597 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2598 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2599 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2604 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2605 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2606 Chater and J. A. Iulner and J. Davis",
2607 title = "Formation mechanisms and structures of insulating
2608 compounds formed in silicon by ion beam synthesis",
2609 publisher = "Taylor \& Francis",
2611 journal = "Radiat. Eff.",
2615 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2616 notes = "ibs, comparison with sio and sin, higher temp or time,
2617 no c redistribution",
2621 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2622 J. Davis and G. E. Celler",
2624 title = "Formation of buried layers of beta-Si{C} using ion
2625 beam synthesis and incoherent lamp annealing",
2628 journal = "Appl. Phys. Lett.",
2631 pages = "2242--2244",
2632 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2633 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2634 URL = "http://link.aip.org/link/?APL/51/2242/1",
2635 doi = "10.1063/1.98953",
2636 notes = "nice tem images, sic by ibs",
2640 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2641 and M. Olivier and A. M. Papon and G. Rolland",
2643 title = "High-temperature ion beam synthesis of cubic Si{C}",
2646 journal = "J. Appl. Phys.",
2649 pages = "2908--2912",
2650 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2651 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2652 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2653 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2654 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2655 REACTIONS; MONOCRYSTALS",
2656 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2657 doi = "10.1063/1.346092",
2658 notes = "triple energy implantation to overcome high annealing
2663 author = "R. I. Scace and G. A. Slack",
2665 title = "Solubility of Carbon in Silicon and Germanium",
2668 journal = "J. Chem. Phys.",
2671 pages = "1551--1555",
2672 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2673 doi = "10.1063/1.1730236",
2674 notes = "solubility of c in c-si, si-c phase diagram",
2678 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2680 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2681 Laboratories Eindhoven Netherlands Eindhoven
2683 title = "Boron implantations in silicon: {A} comparison of
2684 charge carrier and boron concentration profiles",
2685 journal = "Appl. Phys. A",
2686 publisher = "Springer Berlin / Heidelberg",
2688 keyword = "Physics and Astronomy",
2692 URL = "http://dx.doi.org/10.1007/BF00884267",
2693 note = "10.1007/BF00884267",
2695 notes = "first time ted (only for boron?)",
2699 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2702 title = "Rapid annealing and the anomalous diffusion of ion
2703 implanted boron into silicon",
2706 journal = "Appl. Phys. Lett.",
2710 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2711 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2712 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2713 URL = "http://link.aip.org/link/?APL/50/416/1",
2714 doi = "10.1063/1.98160",
2715 notes = "ted of boron in si",
2719 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2722 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2723 time, and matrix dependence of atomic and electrical
2727 journal = "J. Appl. Phys.",
2730 pages = "6191--6198",
2731 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2732 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2733 CRYSTALS; AMORPHIZATION",
2734 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2735 doi = "10.1063/1.346910",
2736 notes = "ted of boron in si",
2740 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2741 F. W. Saris and W. Vandervorst",
2743 title = "Role of {C} and {B} clusters in transient diffusion of
2747 journal = "Appl. Phys. Lett.",
2750 pages = "1150--1152",
2751 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2752 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2754 URL = "http://link.aip.org/link/?APL/68/1150/1",
2755 doi = "10.1063/1.115706",
2756 notes = "suppression of transient enhanced diffusion (ted)",
2760 title = "Implantation and transient boron diffusion: the role
2761 of the silicon self-interstitial",
2762 journal = "Nucl. Instrum. Methods Phys. Res. B",
2767 note = "Selected Papers of the Tenth International Conference
2768 on Ion Implantation Technology (IIT '94)",
2770 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2771 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2772 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2777 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2778 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2779 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2782 title = "Physical mechanisms of transient enhanced dopant
2783 diffusion in ion-implanted silicon",
2786 journal = "J. Appl. Phys.",
2789 pages = "6031--6050",
2790 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2791 doi = "10.1063/1.364452",
2792 notes = "ted, transient enhanced diffusion, c silicon trap",
2796 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2798 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2799 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2802 journal = "Appl. Phys. Lett.",
2806 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2807 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2808 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2810 URL = "http://link.aip.org/link/?APL/64/324/1",
2811 doi = "10.1063/1.111195",
2812 notes = "beta sic nano crystals in si, mbe, annealing",
2816 author = "Richard A. Soref",
2818 title = "Optical band gap of the ternary semiconductor Si[sub 1
2819 - x - y]Ge[sub x]{C}[sub y]",
2822 journal = "J. Appl. Phys.",
2825 pages = "2470--2472",
2826 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2827 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2829 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2830 doi = "10.1063/1.349403",
2831 notes = "band gap of strained si by c",
2835 author = "E Kasper",
2836 title = "Superlattices of group {IV} elements, a new
2837 possibility to produce direct band gap material",
2838 journal = "Phys. Scr.",
2841 URL = "http://stacks.iop.org/1402-4896/T35/232",
2843 notes = "superlattices, convert indirect band gap into a
2848 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2851 title = "Growth and strain compensation effects in the ternary
2852 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2855 journal = "Appl. Phys. Lett.",
2858 pages = "3033--3035",
2859 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2860 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2861 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2862 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2864 URL = "http://link.aip.org/link/?APL/60/3033/1",
2865 doi = "10.1063/1.106774",
2869 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2872 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2876 journal = "J. Vac. Sci. Technol. B",
2879 pages = "1064--1068",
2880 location = "Ottawa (Canada)",
2881 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2882 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2883 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2884 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2885 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2886 doi = "10.1116/1.587008",
2887 notes = "substitutional c in si by mbe",
2890 @Article{powell93_2,
2891 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2892 of the ternary system",
2893 journal = "J. Cryst. Growth",
2900 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2901 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2902 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2907 author = "H. J. Osten",
2908 title = "Modification of Growth Modes in Lattice-Mismatched
2909 Epitaxial Systems: Si/Ge",
2910 journal = "phys. status solidi (a)",
2913 publisher = "WILEY-VCH Verlag",
2915 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2916 doi = "10.1002/pssa.2211450203",
2921 @Article{dietrich94,
2922 title = "Lattice distortion in a strain-compensated
2923 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2924 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2925 Methfessel and P. Zaumseil",
2926 journal = "Phys. Rev. B",
2929 pages = "17185--17190",
2933 doi = "10.1103/PhysRevB.49.17185",
2934 publisher = "American Physical Society",
2938 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2940 title = "Growth of an inverse tetragonal distorted SiGe layer
2941 on Si(001) by adding small amounts of carbon",
2944 journal = "Appl. Phys. Lett.",
2947 pages = "3440--3442",
2948 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2949 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2950 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2952 URL = "http://link.aip.org/link/?APL/64/3440/1",
2953 doi = "10.1063/1.111235",
2954 notes = "inversely strained / distorted heterostructure",
2958 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2959 LeGoues and J. C. Tsang and F. Cardone",
2961 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2962 molecular beam epitaxy",
2965 journal = "Appl. Phys. Lett.",
2969 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2970 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2971 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2972 FILM GROWTH; MICROSTRUCTURE",
2973 URL = "http://link.aip.org/link/?APL/60/356/1",
2974 doi = "10.1063/1.106655",
2978 author = "H. J. Osten and J. Griesche and S. Scalese",
2980 title = "Substitutional carbon incorporation in epitaxial
2981 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2982 molecular beam epitaxy",
2985 journal = "Appl. Phys. Lett.",
2989 keywords = "molecular beam epitaxial growth; semiconductor growth;
2990 wide band gap semiconductors; interstitials; silicon
2992 URL = "http://link.aip.org/link/?APL/74/836/1",
2993 doi = "10.1063/1.123384",
2994 notes = "substitutional c in si by mbe",
2998 author = "M. Born and R. Oppenheimer",
2999 title = "Zur Quantentheorie der Molekeln",
3000 journal = "Ann. Phys. (Leipzig)",
3003 publisher = "WILEY-VCH Verlag",
3005 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3006 doi = "10.1002/andp.19273892002",
3011 @Article{hohenberg64,
3012 title = "Inhomogeneous Electron Gas",
3013 author = "P. Hohenberg and W. Kohn",
3014 journal = "Phys. Rev.",
3017 pages = "B864--B871",
3021 doi = "10.1103/PhysRev.136.B864",
3022 publisher = "American Physical Society",
3023 notes = "density functional theory, dft",
3027 title = "The calculation of atomic fields",
3028 author = "L. H. Thomas",
3029 journal = "Proc. Cambridge Philos. Soc.",
3033 doi = "10.1017/S0305004100011683",
3038 author = "E. Fermi",
3039 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3047 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3048 Central Field. Part {I}. Theory and Methods",
3049 author = "D. R. Hartree",
3050 journal = "Proc. Cambridge Philos. Soc.",
3054 doi = "10.1017/S0305004100011919",
3058 title = "The Theory of Complex Spectra",
3059 author = "J. C. Slater",
3060 journal = "Phys. Rev.",
3063 pages = "1293--1322",
3067 doi = "10.1103/PhysRev.34.1293",
3068 publisher = "American Physical Society",
3072 title = "Self-Consistent Equations Including Exchange and
3073 Correlation Effects",
3074 author = "W. Kohn and L. J. Sham",
3075 journal = "Phys. Rev.",
3078 pages = "A1133--A1138",
3082 doi = "10.1103/PhysRev.140.A1133",
3083 publisher = "American Physical Society",
3084 notes = "dft, exchange and correlation",
3088 title = "Density Functional and Density Matrix Method Scaling
3089 Linearly with the Number of Atoms",
3091 journal = "Phys. Rev. Lett.",
3094 pages = "3168--3171",
3098 doi = "10.1103/PhysRevLett.76.3168",
3099 publisher = "American Physical Society",
3103 title = "Edge Electron Gas",
3104 author = "Walter Kohn and Ann E. Mattsson",
3105 journal = "Phys. Rev. Lett.",
3108 pages = "3487--3490",
3112 doi = "10.1103/PhysRevLett.81.3487",
3113 publisher = "American Physical Society",
3117 title = "Nobel Lecture: Electronic structure of matter---wave
3118 functions and density functionals",
3120 journal = "Rev. Mod. Phys.",
3123 pages = "1253--1266",
3127 doi = "10.1103/RevModPhys.71.1253",
3128 publisher = "American Physical Society",
3132 title = "Iterative minimization techniques for ab initio
3133 total-energy calculations: molecular dynamics and
3134 conjugate gradients",
3135 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3136 Arias and J. D. Joannopoulos",
3137 journal = "Rev. Mod. Phys.",
3140 pages = "1045--1097",
3144 doi = "10.1103/RevModPhys.64.1045",
3145 publisher = "American Physical Society",
3149 title = "Electron densities in search of Hamiltonians",
3150 author = "Mel Levy",
3151 journal = "Phys. Rev. A",
3154 pages = "1200--1208",
3158 doi = "10.1103/PhysRevA.26.1200",
3159 publisher = "American Physical Society",
3163 title = "Strain-stabilized highly concentrated pseudomorphic
3164 $Si1-x$$Cx$ layers in Si",
3165 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3167 journal = "Phys. Rev. Lett.",
3170 pages = "3578--3581",
3174 doi = "10.1103/PhysRevLett.72.3578",
3175 publisher = "American Physical Society",
3176 notes = "high c concentration in si, heterostructure, strained
3181 title = "Phosphorous Doping of Strain-Induced
3182 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3183 by Low-Temperature Chemical Vapor Deposition",
3184 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3185 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3186 journal = "Japanese J. Appl. Phys.",
3188 number = "Part 1, No. 4B",
3189 pages = "2472--2475",
3192 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3193 doi = "10.1143/JJAP.41.2472",
3194 publisher = "The Japan Society of Applied Physics",
3195 notes = "experimental charge carrier mobility in strained si",
3199 title = "Electron Transport Model for Strained Silicon-Carbon
3201 author = "Shu-Tong Chang and Chung-Yi Lin",
3202 journal = "Japanese J. Appl. Phys.",
3205 pages = "2257--2262",
3208 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3209 doi = "10.1143/JJAP.44.2257",
3210 publisher = "The Japan Society of Applied Physics",
3211 notes = "enhance of electron mobility in strained si",
3214 @Article{kissinger94,
3215 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3218 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3219 y] layers on Si(001)",
3222 journal = "Appl. Phys. Lett.",
3225 pages = "3356--3358",
3226 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3227 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3228 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3229 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3230 URL = "http://link.aip.org/link/?APL/65/3356/1",
3231 doi = "10.1063/1.112390",
3232 notes = "strained si influence on optical properties",
3236 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3239 title = "Substitutional versus interstitial carbon
3240 incorporation during pseudomorphic growth of Si[sub 1 -
3241 y]{C}[sub y] on Si(001)",
3244 journal = "J. Appl. Phys.",
3247 pages = "6711--6715",
3248 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3249 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3251 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3252 doi = "10.1063/1.363797",
3253 notes = "mbe substitutional vs interstitial c incorporation",
3257 author = "H. J. Osten and P. Gaworzewski",
3259 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3260 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3264 journal = "J. Appl. Phys.",
3267 pages = "4977--4981",
3268 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3269 semiconductors; semiconductor epitaxial layers; carrier
3270 density; Hall mobility; interstitials; defect states",
3271 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3272 doi = "10.1063/1.366364",
3273 notes = "charge transport in strained si",
3277 title = "Carbon-mediated aggregation of self-interstitials in
3278 silicon: {A} large-scale molecular dynamics study",
3279 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3280 journal = "Phys. Rev. B",
3287 doi = "10.1103/PhysRevB.69.155214",
3288 publisher = "American Physical Society",
3289 notes = "simulation using promising tersoff reparametrization",
3293 title = "Event-Based Relaxation of Continuous Disordered
3295 author = "G. T. Barkema and Normand Mousseau",
3296 journal = "Phys. Rev. Lett.",
3299 pages = "4358--4361",
3303 doi = "10.1103/PhysRevLett.77.4358",
3304 publisher = "American Physical Society",
3305 notes = "activation relaxation technique, art, speed up slow
3310 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3311 Minoukadeh and F. Willaime",
3313 title = "Some improvements of the activation-relaxation
3314 technique method for finding transition pathways on
3315 potential energy surfaces",
3318 journal = "J. Chem. Phys.",
3324 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3325 surfaces; vacancies (crystal)",
3326 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3327 doi = "10.1063/1.3088532",
3328 notes = "improvements to art, refs for methods to find
3329 transition pathways",
3332 @Article{parrinello81,
3333 author = "M. Parrinello and A. Rahman",
3335 title = "Polymorphic transitions in single crystals: {A} new
3336 molecular dynamics method",
3339 journal = "J. Appl. Phys.",
3342 pages = "7182--7190",
3343 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3344 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3345 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3346 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3347 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3349 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3350 doi = "10.1063/1.328693",
3353 @Article{stillinger85,
3354 title = "Computer simulation of local order in condensed phases
3356 author = "Frank H. Stillinger and Thomas A. Weber",
3357 journal = "Phys. Rev. B",
3360 pages = "5262--5271",
3364 doi = "10.1103/PhysRevB.31.5262",
3365 publisher = "American Physical Society",
3369 title = "Empirical potential for hydrocarbons for use in
3370 simulating the chemical vapor deposition of diamond
3372 author = "Donald W. Brenner",
3373 journal = "Phys. Rev. B",
3376 pages = "9458--9471",
3380 doi = "10.1103/PhysRevB.42.9458",
3381 publisher = "American Physical Society",
3382 notes = "brenner hydro carbons",
3386 title = "Modeling of Covalent Bonding in Solids by Inversion of
3387 Cohesive Energy Curves",
3388 author = "Martin Z. Bazant and Efthimios Kaxiras",
3389 journal = "Phys. Rev. Lett.",
3392 pages = "4370--4373",
3396 doi = "10.1103/PhysRevLett.77.4370",
3397 publisher = "American Physical Society",
3398 notes = "first si edip",
3402 title = "Environment-dependent interatomic potential for bulk
3404 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3406 journal = "Phys. Rev. B",
3409 pages = "8542--8552",
3413 doi = "10.1103/PhysRevB.56.8542",
3414 publisher = "American Physical Society",
3415 notes = "second si edip",
3419 title = "Interatomic potential for silicon defects and
3421 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3422 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3423 journal = "Phys. Rev. B",
3426 pages = "2539--2550",
3430 doi = "10.1103/PhysRevB.58.2539",
3431 publisher = "American Physical Society",
3432 notes = "latest si edip, good dislocation explanation",
3436 title = "{PARCAS} molecular dynamics code",
3437 author = "K. Nordlund",
3442 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3444 author = "Arthur F. Voter",
3445 journal = "Phys. Rev. Lett.",
3448 pages = "3908--3911",
3452 doi = "10.1103/PhysRevLett.78.3908",
3453 publisher = "American Physical Society",
3454 notes = "hyperdynamics, accelerated md",
3458 author = "Arthur F. Voter",
3460 title = "A method for accelerating the molecular dynamics
3461 simulation of infrequent events",
3464 journal = "J. Chem. Phys.",
3467 pages = "4665--4677",
3468 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3469 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3470 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3471 energy functions; surface diffusion; reaction kinetics
3472 theory; potential energy surfaces",
3473 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3474 doi = "10.1063/1.473503",
3475 notes = "improved hyperdynamics md",
3478 @Article{sorensen2000,
3479 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3481 title = "Temperature-accelerated dynamics for simulation of
3485 journal = "J. Chem. Phys.",
3488 pages = "9599--9606",
3489 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3490 MOLECULAR DYNAMICS METHOD; surface diffusion",
3491 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3492 doi = "10.1063/1.481576",
3493 notes = "temperature accelerated dynamics, tad",
3497 title = "Parallel replica method for dynamics of infrequent
3499 author = "Arthur F. Voter",
3500 journal = "Phys. Rev. B",
3503 pages = "R13985--R13988",
3507 doi = "10.1103/PhysRevB.57.R13985",
3508 publisher = "American Physical Society",
3509 notes = "parallel replica method, accelerated md",
3513 author = "Xiongwu Wu and Shaomeng Wang",
3515 title = "Enhancing systematic motion in molecular dynamics
3519 journal = "J. Chem. Phys.",
3522 pages = "9401--9410",
3523 keywords = "molecular dynamics method; argon; Lennard-Jones
3524 potential; crystallisation; liquid theory",
3525 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3526 doi = "10.1063/1.478948",
3527 notes = "self guided md, sgmd, accelerated md, enhancing
3531 @Article{choudhary05,
3532 author = "Devashish Choudhary and Paulette Clancy",
3534 title = "Application of accelerated molecular dynamics schemes
3535 to the production of amorphous silicon",
3538 journal = "J. Chem. Phys.",
3544 keywords = "molecular dynamics method; silicon; glass structure;
3545 amorphous semiconductors",
3546 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3547 doi = "10.1063/1.1878733",
3548 notes = "explanation of sgmd and hyper md, applied to amorphous
3553 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3555 title = "Carbon precipitation in silicon: Why is it so
3559 journal = "Appl. Phys. Lett.",
3562 pages = "3336--3338",
3563 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3564 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3566 URL = "http://link.aip.org/link/?APL/62/3336/1",
3567 doi = "10.1063/1.109063",
3568 notes = "interfacial energy of cubic sic and si, si self
3569 interstitials necessary for precipitation, volume
3570 decrease, high interface energy",
3573 @Article{chaussende08,
3574 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3575 journal = "J. Cryst. Growth",
3580 note = "Proceedings of the E-MRS Conference, Symposium G -
3581 Substrates of Wide Bandgap Materials",
3583 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3584 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3585 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3586 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3587 and A. Andreadou and E. K. Polychroniadis and C.
3588 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3589 notes = "3c-sic crystal growth, sic fabrication + links,
3593 @Article{chaussende07,
3594 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3595 title = "Status of Si{C} bulk growth processes",
3596 journal = "J. Phys. D",
3600 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3602 notes = "review of sic single crystal growth methods, process
3607 title = "Forces in Molecules",
3608 author = "R. P. Feynman",
3609 journal = "Phys. Rev.",
3616 doi = "10.1103/PhysRev.56.340",
3617 publisher = "American Physical Society",
3618 notes = "hellmann feynman forces",
3622 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3623 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3624 their Contrasting Properties",
3625 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3627 journal = "Phys. Rev. Lett.",
3634 doi = "10.1103/PhysRevLett.84.943",
3635 publisher = "American Physical Society",
3636 notes = "si sio2 and sic sio2 interface",
3639 @Article{djurabekova08,
3640 title = "Atomistic simulation of the interface structure of Si
3641 nanocrystals embedded in amorphous silica",
3642 author = "Flyura Djurabekova and Kai Nordlund",
3643 journal = "Phys. Rev. B",
3650 doi = "10.1103/PhysRevB.77.115325",
3651 publisher = "American Physical Society",
3652 notes = "nc-si in sio2, interface energy, nc construction,
3653 angular distribution, coordination",
3657 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3658 W. Liang and J. Zou",
3660 title = "Nature of interfacial defects and their roles in
3661 strain relaxation at highly lattice mismatched
3662 3{C}-Si{C}/Si (001) interface",
3665 journal = "J. Appl. Phys.",
3671 keywords = "anelastic relaxation; crystal structure; dislocations;
3672 elemental semiconductors; semiconductor growth;
3673 semiconductor thin films; silicon; silicon compounds;
3674 stacking faults; wide band gap semiconductors",
3675 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3676 doi = "10.1063/1.3234380",
3677 notes = "sic/si interface, follow refs, tem image
3678 deconvolution, dislocation defects",
3681 @Article{kitabatake93,
3682 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3685 title = "Simulations and experiments of Si{C} heteroepitaxial
3686 growth on Si(001) surface",
3689 journal = "J. Appl. Phys.",
3692 pages = "4438--4445",
3693 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3694 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3695 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3696 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3697 doi = "10.1063/1.354385",
3698 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3702 @Article{kitabatake97,
3703 author = "Makoto Kitabatake",
3704 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3705 Heteroepitaxial Growth",
3706 publisher = "WILEY-VCH Verlag",
3708 journal = "phys. status solidi (b)",
3711 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3712 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3713 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3717 title = "Strain relaxation and thermal stability of the
3718 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3720 journal = "Thin Solid Films",
3727 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3728 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3729 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3730 keywords = "Strain relaxation",
3731 keywords = "Interfaces",
3732 keywords = "Thermal stability",
3733 keywords = "Molecular dynamics",
3734 notes = "tersoff sic/si interface study",
3738 title = "Ab initio Study of Misfit Dislocations at the
3739 $Si{C}/Si(001)$ Interface",
3740 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3742 journal = "Phys. Rev. Lett.",
3749 doi = "10.1103/PhysRevLett.89.156101",
3750 publisher = "American Physical Society",
3751 notes = "sic/si interface study",
3754 @Article{pizzagalli03,
3755 title = "Theoretical investigations of a highly mismatched
3756 interface: Si{C}/Si(001)",
3757 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3759 journal = "Phys. Rev. B",
3766 doi = "10.1103/PhysRevB.68.195302",
3767 publisher = "American Physical Society",
3768 notes = "tersoff md and ab initio sic/si interface study",
3772 title = "Atomic configurations of dislocation core and twin
3773 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3774 electron microscopy",
3775 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3776 H. Zheng and J. W. Liang",
3777 journal = "Phys. Rev. B",
3784 doi = "10.1103/PhysRevB.75.184103",
3785 publisher = "American Physical Society",
3786 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3790 @Article{hornstra58,
3791 title = "Dislocations in the diamond lattice",
3792 journal = "J. Phys. Chem. Solids",
3799 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3800 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3801 author = "J. Hornstra",
3802 notes = "dislocations in diamond lattice",
3806 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3807 Ion `Hot' Implantation",
3808 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3809 Hirao and Naoki Arai and Tomio Izumi",
3810 journal = "Japanese J. Appl. Phys.",
3812 number = "Part 1, No. 2A",
3816 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3817 doi = "10.1143/JJAP.31.343",
3818 publisher = "The Japan Society of Applied Physics",
3819 notes = "c-c bonds in c implanted si, hot implantation
3820 efficiency, c-c hard to break by thermal annealing",
3823 @Article{eichhorn99,
3824 author = "F. Eichhorn and N. Schell and W. Matz and R.
3827 title = "Strain and Si{C} particle formation in silicon
3828 implanted with carbon ions of medium fluence studied by
3829 synchrotron x-ray diffraction",
3832 journal = "J. Appl. Phys.",
3835 pages = "4184--4187",
3836 keywords = "silicon; carbon; elemental semiconductors; chemical
3837 interdiffusion; ion implantation; X-ray diffraction;
3838 precipitation; semiconductor doping",
3839 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3840 doi = "10.1063/1.371344",
3841 notes = "sic conversion by ibs, detected substitutional carbon,
3842 expansion of si lattice",
3845 @Article{eichhorn02,
3846 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3847 Metzger and W. Matz and R. K{\"{o}}gler",
3849 title = "Structural relation between Si and Si{C} formed by
3850 carbon ion implantation",
3853 journal = "J. Appl. Phys.",
3856 pages = "1287--1292",
3857 keywords = "silicon compounds; wide band gap semiconductors; ion
3858 implantation; annealing; X-ray scattering; transmission
3859 electron microscopy",
3860 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3861 doi = "10.1063/1.1428105",
3862 notes = "3c-sic alignement to si host in ibs depending on
3863 temperature, might explain c into c sub trafo",
3867 author = "G Lucas and M Bertolus and L Pizzagalli",
3868 title = "An environment-dependent interatomic potential for
3869 silicon carbide: calculation of bulk properties,
3870 high-pressure phases, point and extended defects, and
3871 amorphous structures",
3872 journal = "J. Phys.: Condens. Matter",
3876 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3882 author = "J Godet and L Pizzagalli and S Brochard and P
3884 title = "Comparison between classical potentials and ab initio
3885 methods for silicon under large shear",
3886 journal = "J. Phys.: Condens. Matter",
3890 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3892 notes = "comparison of empirical potentials, stillinger weber,
3893 edip, tersoff, ab initio",
3896 @Article{moriguchi98,
3897 title = "Verification of Tersoff's Potential for Static
3898 Structural Analysis of Solids of Group-{IV} Elements",
3899 author = "Koji Moriguchi and Akira Shintani",
3900 journal = "Japanese J. Appl. Phys.",
3902 number = "Part 1, No. 2",
3906 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3907 doi = "10.1143/JJAP.37.414",
3908 publisher = "The Japan Society of Applied Physics",
3909 notes = "tersoff stringent test",
3912 @Article{mazzarolo01,
3913 title = "Low-energy recoils in crystalline silicon: Quantum
3915 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3916 Lulli and Eros Albertazzi",
3917 journal = "Phys. Rev. B",
3924 doi = "10.1103/PhysRevB.63.195207",
3925 publisher = "American Physical Society",
3928 @Article{holmstroem08,
3929 title = "Threshold defect production in silicon determined by
3930 density functional theory molecular dynamics
3932 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3933 journal = "Phys. Rev. B",
3940 doi = "10.1103/PhysRevB.78.045202",
3941 publisher = "American Physical Society",
3942 notes = "threshold displacement comparison empirical and ab
3946 @Article{nordlund97,
3947 title = "Repulsive interatomic potentials calculated using
3948 Hartree-Fock and density-functional theory methods",
3949 journal = "Nucl. Instrum. Methods Phys. Res. B",
3956 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3957 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3958 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3959 notes = "repulsive ab initio potential",
3963 title = "Efficiency of ab-initio total energy calculations for
3964 metals and semiconductors using a plane-wave basis
3966 journal = "Comput. Mater. Sci.",
3973 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3974 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3975 author = "G. Kresse and J. Furthm{\"{u}}ller",
3980 title = "Projector augmented-wave method",
3981 author = "P. E. Bl{\"o}chl",
3982 journal = "Phys. Rev. B",
3985 pages = "17953--17979",
3989 doi = "10.1103/PhysRevB.50.17953",
3990 publisher = "American Physical Society",
3991 notes = "paw method",
3994 @InCollection{cohen70,
3995 title = "The Fitting of Pseudopotentials to Experimental Data
3996 and Their Subsequent Application",
3997 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
3999 publisher = "Academic Press",
4003 series = "Solid State Physics",
4005 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4006 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4007 author = "Marvin L. Cohen and Volker Heine",
4011 title = "Norm-Conserving Pseudopotentials",
4012 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4013 journal = "Phys. Rev. Lett.",
4016 pages = "1494--1497",
4020 doi = "10.1103/PhysRevLett.43.1494",
4021 publisher = "American Physical Society",
4022 notes = "norm-conserving pseudopotentials",
4025 @Article{troullier91,
4026 title = "Efficient pseudopotentials for plane-wave
4028 author = "N. Troullier and Jos\'e Luriaas Martins",
4029 journal = "Phys. Rev. B",
4032 pages = "1993--2006",
4036 doi = "10.1103/PhysRevB.43.1993",
4037 publisher = "American Physical Society",
4040 @Article{vanderbilt90,
4041 title = "Soft self-consistent pseudopotentials in a generalized
4042 eigenvalue formalism",
4043 author = "David Vanderbilt",
4044 journal = "Phys. Rev. B",
4047 pages = "7892--7895",
4051 doi = "10.1103/PhysRevB.41.7892",
4052 publisher = "American Physical Society",
4053 notes = "vasp pseudopotentials",
4056 @Article{ceperley80,
4057 title = "Ground State of the Electron Gas by a Stochastic
4059 author = "D. M. Ceperley and B. J. Alder",
4060 journal = "Phys. Rev. Lett.",
4067 doi = "10.1103/PhysRevLett.45.566",
4068 publisher = "American Physical Society",
4072 title = "Self-interaction correction to density-functional
4073 approximations for many-electron systems",
4074 author = "J. P. Perdew and Alex Zunger",
4075 journal = "Phys. Rev. B",
4078 pages = "5048--5079",
4082 doi = "10.1103/PhysRevB.23.5048",
4083 publisher = "American Physical Society",
4087 title = "Accurate and simple density functional for the
4088 electronic exchange energy: Generalized gradient
4090 author = "John P. Perdew and Yue Wang",
4091 journal = "Phys. Rev. B",
4094 pages = "8800--8802",
4098 doi = "10.1103/PhysRevB.33.8800",
4099 publisher = "American Physical Society",
4100 notes = "rapid communication gga",
4104 title = "Generalized gradient approximations for exchange and
4105 correlation: {A} look backward and forward",
4106 journal = "Physica B",
4113 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4114 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4115 author = "John P. Perdew",
4116 notes = "gga overview",
4120 title = "Atoms, molecules, solids, and surfaces: Applications
4121 of the generalized gradient approximation for exchange
4123 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4124 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4125 and Carlos Fiolhais",
4126 journal = "Phys. Rev. B",
4129 pages = "6671--6687",
4133 doi = "10.1103/PhysRevB.46.6671",
4134 publisher = "American Physical Society",
4135 notes = "gga pw91 (as in vasp)",
4139 title = "Special Points in the Brillouin Zone",
4140 author = "D. J. Chadi and Marvin L. Cohen",
4141 journal = "Phys. Rev. B",
4144 pages = "5747--5753",
4148 doi = "10.1103/PhysRevB.8.5747",
4149 publisher = "American Physical Society",
4152 @Article{baldereschi73,
4153 title = "Mean-Value Point in the Brillouin Zone",
4154 author = "A. Baldereschi",
4155 journal = "Phys. Rev. B",
4158 pages = "5212--5215",
4162 doi = "10.1103/PhysRevB.7.5212",
4163 publisher = "American Physical Society",
4164 notes = "mean value k point",
4167 @Article{monkhorst76,
4168 title = "Special points for Brillouin-zone integrations",
4169 author = "Hendrik J. Monkhorst and James D. Pack",
4170 journal = "Phys. Rev. B",
4173 pages = "5188--5192",
4177 doi = "10.1103/PhysRevB.13.5188",
4178 publisher = "American Physical Society",
4182 title = "Ab initio pseudopotential calculations of dopant
4184 journal = "Comput. Mater. Sci.",
4191 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4192 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4193 author = "Jing Zhu",
4194 keywords = "TED (transient enhanced diffusion)",
4195 keywords = "Boron dopant",
4196 keywords = "Carbon dopant",
4197 keywords = "Defect",
4198 keywords = "ab initio pseudopotential method",
4199 keywords = "Impurity cluster",
4200 notes = "binding of c to si interstitial, c in si defects",
4204 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4206 title = "Si{C} buried layer formation by ion beam synthesis at
4210 journal = "Appl. Phys. Lett.",
4213 pages = "2646--2648",
4214 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4215 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4216 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4217 ELECTRON MICROSCOPY",
4218 URL = "http://link.aip.org/link/?APL/66/2646/1",
4219 doi = "10.1063/1.113112",
4220 notes = "precipitation mechanism by substitutional carbon, si
4221 self interstitials react with further implanted c",
4225 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4226 Kolodzey and A. Hairie",
4228 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4232 journal = "J. Appl. Phys.",
4235 pages = "4631--4633",
4236 keywords = "silicon compounds; precipitation; localised modes;
4237 semiconductor epitaxial layers; infrared spectra;
4238 Fourier transform spectra; thermal stability;
4240 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4241 doi = "10.1063/1.368703",
4242 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4246 author = "R Jones and B J Coomer and P R Briddon",
4247 title = "Quantum mechanical modelling of defects in
4249 journal = "J. Phys.: Condens. Matter",
4253 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4255 notes = "ab inito dft intro, vibrational modes, c defect in
4260 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4261 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4262 J. E. Greene and S. G. Bishop",
4264 title = "Carbon incorporation pathways and lattice sites in
4265 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4266 molecular-beam epitaxy",
4269 journal = "J. Appl. Phys.",
4272 pages = "5716--5727",
4273 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4274 doi = "10.1063/1.1465122",
4275 notes = "c substitutional incorporation pathway, dft and expt",
4279 title = "Dynamic properties of interstitial carbon and
4280 carbon-carbon pair defects in silicon",
4281 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4283 journal = "Phys. Rev. B",
4286 pages = "2188--2194",
4290 doi = "10.1103/PhysRevB.55.2188",
4291 publisher = "American Physical Society",
4292 notes = "ab initio c in si and di-carbon defect, no formation
4293 energies, different migration barriers and paths",
4297 title = "Interstitial carbon and the carbon-carbon pair in
4298 silicon: Semiempirical electronic-structure
4300 author = "Matthew J. Burnard and Gary G. DeLeo",
4301 journal = "Phys. Rev. B",
4304 pages = "10217--10225",
4308 doi = "10.1103/PhysRevB.47.10217",
4309 publisher = "American Physical Society",
4310 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4311 carbon defect, formation energies",
4315 title = "Electronic structure of interstitial carbon in
4317 author = "Morgan Besson and Gary G. DeLeo",
4318 journal = "Phys. Rev. B",
4321 pages = "4028--4033",
4325 doi = "10.1103/PhysRevB.43.4028",
4326 publisher = "American Physical Society",
4330 title = "Review of atomistic simulations of surface diffusion
4331 and growth on semiconductors",
4332 journal = "Comput. Mater. Sci.",
4337 note = "Proceedings of the Workshop on Virtual Molecular Beam
4340 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4341 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4342 author = "Efthimios Kaxiras",
4343 notes = "might contain c 100 db formation energy, overview md,
4344 tight binding, first principles",
4347 @Article{kaukonen98,
4348 title = "Effect of {N} and {B} doping on the growth of {CVD}
4350 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4352 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4353 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4355 journal = "Phys. Rev. B",
4358 pages = "9965--9970",
4362 doi = "10.1103/PhysRevB.57.9965",
4363 publisher = "American Physical Society",
4364 notes = "constrained conjugate gradient relaxation technique
4369 title = "Correlation between the antisite pair and the ${DI}$
4371 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4372 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4374 journal = "Phys. Rev. B",
4381 doi = "10.1103/PhysRevB.67.155203",
4382 publisher = "American Physical Society",
4386 title = "Production and recovery of defects in Si{C} after
4387 irradiation and deformation",
4388 journal = "J. Nucl. Mater.",
4391 pages = "1803--1808",
4395 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4396 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4397 author = "J. Chen and P. Jung and H. Klein",
4401 title = "Accumulation, dynamic annealing and thermal recovery
4402 of ion-beam-induced disorder in silicon carbide",
4403 journal = "Nucl. Instrum. Methods Phys. Res. B",
4410 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4411 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4412 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4415 @Article{bockstedte03,
4416 title = "Ab initio study of the migration of intrinsic defects
4418 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4420 journal = "Phys. Rev. B",
4427 doi = "10.1103/PhysRevB.68.205201",
4428 publisher = "American Physical Society",
4429 notes = "defect migration in sic",
4433 title = "Theoretical study of vacancy diffusion and
4434 vacancy-assisted clustering of antisites in Si{C}",
4435 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4437 journal = "Phys. Rev. B",
4444 doi = "10.1103/PhysRevB.68.155208",
4445 publisher = "American Physical Society",
4449 journal = "Telegrafiya i Telefoniya bez Provodov",
4453 author = "O. V. Lossev",
4457 title = "Luminous carborundum detector and detection effect and
4458 oscillations with crystals",
4459 journal = "Philos. Mag. Series 7",
4462 pages = "1024--1044",
4464 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4465 author = "O. V. Lossev",
4469 journal = "Physik. Zeitschr.",
4473 author = "O. V. Lossev",
4477 journal = "Physik. Zeitschr.",
4481 author = "O. V. Lossev",
4485 journal = "Physik. Zeitschr.",
4489 author = "O. V. Lossev",
4493 title = "A note on carborundum",
4494 journal = "Electrical World",
4498 author = "H. J. Round",
4501 @Article{vashishath08,
4502 title = "Recent trends in silicon carbide device research",
4503 journal = "Mj. Int. J. Sci. Tech.",
4508 author = "Munish Vashishath and Ashoke K. Chatterjee",
4509 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4510 notes = "sic polytype electronic properties",
4514 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4516 title = "Growth and Properties of beta-Si{C} Single Crystals",
4519 journal = "J. Appl. Phys.",
4523 URL = "http://link.aip.org/link/?JAP/37/333/1",
4524 doi = "10.1063/1.1707837",
4525 notes = "sic melt growth",
4529 author = "A. E. van Arkel and J. H. de Boer",
4530 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4532 publisher = "WILEY-VCH Verlag GmbH",
4534 journal = "Z. Anorg. Chem.",
4537 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4538 doi = "10.1002/zaac.19251480133",
4539 notes = "van arkel apparatus",
4543 author = "K. Moers",
4545 journal = "Z. Anorg. Chem.",
4548 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4553 author = "J. T. Kendall",
4554 title = "Electronic Conduction in Silicon Carbide",
4557 journal = "J. Chem. Phys.",
4561 URL = "http://link.aip.org/link/?JCP/21/821/1",
4562 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4567 author = "J. A. Lely",
4569 journal = "Ber. Deut. Keram. Ges.",
4572 notes = "lely sublimation growth process",
4575 @Article{knippenberg63,
4576 author = "W. F. Knippenberg",
4578 journal = "Philips Res. Repts.",
4581 notes = "acheson process",
4584 @Article{hoffmann82,
4585 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4588 title = "Silicon carbide blue light emitting diodes with
4589 improved external quantum efficiency",
4592 journal = "J. Appl. Phys.",
4595 pages = "6962--6967",
4596 keywords = "light emitting diodes; silicon carbides; quantum
4597 efficiency; visible radiation; experimental data;
4598 epitaxy; fabrication; medium temperature; layers;
4599 aluminium; nitrogen; substrates; pn junctions;
4600 electroluminescence; spectra; current density;
4602 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4603 doi = "10.1063/1.330041",
4604 notes = "blue led, sublimation process",
4608 author = "Philip Neudeck",
4609 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4610 Road 44135 Cleveland OH",
4611 title = "Progress in silicon carbide semiconductor electronics
4613 journal = "Journal of Electronic Materials",
4614 publisher = "Springer Boston",
4616 keyword = "Chemistry and Materials Science",
4620 URL = "http://dx.doi.org/10.1007/BF02659688",
4621 note = "10.1007/BF02659688",
4623 notes = "sic data, advantages of 3c sic",
4626 @Article{bhatnagar93,
4627 author = "M. Bhatnagar and B. J. Baliga",
4628 journal = "Electron Devices, IEEE Transactions on",
4629 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4636 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4637 rectifiers;Si;SiC;breakdown voltages;drift region
4638 properties;output characteristics;power MOSFETs;power
4639 semiconductor devices;switching characteristics;thermal
4640 analysis;Schottky-barrier diodes;electric breakdown of
4641 solids;insulated gate field effect transistors;power
4642 transistors;semiconductor materials;silicon;silicon
4643 compounds;solid-state rectifiers;thermal analysis;",
4644 doi = "10.1109/16.199372",
4646 notes = "comparison 3c 6h sic and si devices",
4650 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4651 A. Powell and C. S. Salupo and L. G. Matus",
4652 journal = "Electron Devices, IEEE Transactions on",
4653 title = "Electrical properties of epitaxial 3{C}- and
4654 6{H}-Si{C} p-n junction diodes produced side-by-side on
4655 6{H}-Si{C} substrates",
4661 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4662 C;6H-SiC layers;6H-SiC substrates;CVD
4663 process;SiC;chemical vapor deposition;doping;electrical
4664 properties;epitaxial layers;light
4665 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4666 diodes;polytype;rectification characteristics;reverse
4667 leakage current;reverse voltages;temperature;leakage
4668 currents;power electronics;semiconductor
4669 diodes;semiconductor epitaxial layers;semiconductor
4670 growth;semiconductor materials;silicon
4671 compounds;solid-state rectifiers;substrates;vapour
4672 phase epitaxial growth;",
4673 doi = "10.1109/16.285038",
4675 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4680 author = "N. Schulze and D. L. Barrett and G. Pensl",
4682 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4683 single crystals by physical vapor transport",
4686 journal = "Appl. Phys. Lett.",
4689 pages = "1632--1634",
4690 keywords = "silicon compounds; semiconductor materials;
4691 semiconductor growth; crystal growth from vapour;
4692 photoluminescence; Hall mobility",
4693 URL = "http://link.aip.org/link/?APL/72/1632/1",
4694 doi = "10.1063/1.121136",
4695 notes = "micropipe free 6h-sic pvt growth",
4699 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4701 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4704 journal = "Appl. Phys. Lett.",
4708 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4709 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4710 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4711 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4713 URL = "http://link.aip.org/link/?APL/50/221/1",
4714 doi = "10.1063/1.97667",
4715 notes = "apb 3c-sic heteroepitaxy on si",
4718 @Article{shibahara86,
4719 title = "Surface morphology of cubic Si{C}(100) grown on
4720 Si(100) by chemical vapor deposition",
4721 journal = "J. Cryst. Growth",
4728 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4729 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4730 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4732 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4735 @Article{desjardins96,
4736 author = "P. Desjardins and J. E. Greene",
4738 title = "Step-flow epitaxial growth on two-domain surfaces",
4741 journal = "J. Appl. Phys.",
4744 pages = "1423--1434",
4745 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4746 FILM GROWTH; SURFACE STRUCTURE",
4747 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4748 doi = "10.1063/1.360980",
4749 notes = "apb model",
4753 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4755 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4756 carbonization of silicon",
4759 journal = "J. Appl. Phys.",
4762 pages = "2070--2073",
4763 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4764 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4766 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4767 doi = "10.1063/1.360184",
4768 notes = "ssmbe of sic on si, lower temperatures",
4772 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4773 {MBE} using surface superstructure",
4774 journal = "J. Cryst. Growth",
4781 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4782 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4783 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4784 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4785 notes = "gas source mbe of 3c-sic on 6h-sic",
4788 @Article{yoshinobu92,
4789 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4790 and Takashi Fuyuki and Hiroyuki Matsunami",
4792 title = "Lattice-matched epitaxial growth of single crystalline
4793 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4794 molecular beam epitaxy",
4797 journal = "Appl. Phys. Lett.",
4801 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4802 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4803 INTERFACE STRUCTURE",
4804 URL = "http://link.aip.org/link/?APL/60/824/1",
4805 doi = "10.1063/1.107430",
4806 notes = "gas source mbe of 3c-sic on 6h-sic",
4809 @Article{yoshinobu90,
4810 title = "Atomic level control in gas source {MBE} growth of
4812 journal = "J. Cryst. Growth",
4819 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4820 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4821 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4822 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4823 notes = "gas source mbe of 3c-sic on 3c-sic",
4827 title = "Atomic layer epitaxy controlled by surface
4828 superstructures in Si{C}",
4829 journal = "Thin Solid Films",
4836 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4837 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4838 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4840 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4845 title = "Microscopic mechanisms of accurate layer-by-layer
4846 growth of [beta]-Si{C}",
4847 journal = "Thin Solid Films",
4854 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4855 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4856 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4857 and S. Misawa and E. Sakuma and S. Yoshida",
4858 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4863 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4865 title = "Effects of gas flow ratio on silicon carbide thin film
4866 growth mode and polytype formation during gas-source
4867 molecular beam epitaxy",
4870 journal = "Appl. Phys. Lett.",
4873 pages = "2851--2853",
4874 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4875 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4876 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4878 URL = "http://link.aip.org/link/?APL/65/2851/1",
4879 doi = "10.1063/1.112513",
4880 notes = "gas source mbe of 6h-sic on 6h-sic",
4884 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4885 title = "Heterointerface Control and Epitaxial Growth of
4886 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4887 publisher = "WILEY-VCH Verlag",
4889 journal = "phys. status solidi (b)",
4892 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4897 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4898 journal = "J. Cryst. Growth",
4905 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4906 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4907 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4908 keywords = "Reflection high-energy electron diffraction (RHEED)",
4909 keywords = "Scanning electron microscopy (SEM)",
4910 keywords = "Silicon carbide",
4911 keywords = "Silicon",
4912 keywords = "Island growth",
4913 notes = "lower temperature, 550-700",
4916 @Article{hatayama95,
4917 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4918 on Si using hydrocarbon radicals by gas source
4919 molecular beam epitaxy",
4920 journal = "J. Cryst. Growth",
4927 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4928 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4929 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4930 and Hiroyuki Matsunami",
4934 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4935 title = "The Preference of Silicon Carbide for Growth in the
4936 Metastable Cubic Form",
4937 journal = "J. Am. Ceram. Soc.",
4940 publisher = "Blackwell Publishing Ltd",
4942 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4943 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4944 pages = "2630--2633",
4945 keywords = "silicon carbide, crystal growth, crystal structure,
4946 calculations, stability",
4948 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4949 polytype dft calculation refs",
4952 @Article{allendorf91,
4953 title = "The adsorption of {H}-atoms on polycrystalline
4954 [beta]-silicon carbide",
4955 journal = "Surf. Sci.",
4962 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4963 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4964 author = "Mark D. Allendorf and Duane A. Outka",
4965 notes = "h adsorption on 3c-sic",
4968 @Article{eaglesham93,
4969 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4970 D. P. Adams and S. M. Yalisove",
4972 title = "Effect of {H} on Si molecular-beam epitaxy",
4975 journal = "J. Appl. Phys.",
4978 pages = "6615--6618",
4979 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4980 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4981 DIFFUSION; ADSORPTION",
4982 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4983 doi = "10.1063/1.355101",
4984 notes = "h incorporation on si surface, lower surface
4989 author = "Ronald C. Newman",
4990 title = "Carbon in Crystalline Silicon",
4991 journal = "MRS Proc.",
4996 doi = "10.1557/PROC-59-403",
4997 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4998 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5002 title = "The diffusivity of carbon in silicon",
5003 journal = "J. Phys. Chem. Solids",
5010 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5011 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5012 author = "R. C. Newman and J. Wakefield",
5013 notes = "diffusivity of substitutional c in si",
5017 author = "U. Gösele",
5018 title = "The Role of Carbon and Point Defects in Silicon",
5019 journal = "MRS Proc.",
5024 doi = "10.1557/PROC-59-419",
5025 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5026 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5029 @Article{mukashev82,
5030 title = "Defects in Carbon-Implanted Silicon",
5031 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5032 Fukuoka and Haruo Saito",
5033 journal = "Japanese J. Appl. Phys.",
5035 number = "Part 1, No. 2",
5039 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5040 doi = "10.1143/JJAP.21.399",
5041 publisher = "The Japan Society of Applied Physics",
5045 title = "Convergence of supercell calculations for point
5046 defects in semiconductors: Vacancy in silicon",
5047 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5049 journal = "Phys. Rev. B",
5052 pages = "1318--1325",
5056 doi = "10.1103/PhysRevB.58.1318",
5057 publisher = "American Physical Society",
5058 notes = "convergence k point supercell size, vacancy in
5063 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5064 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5065 K{\"{o}}gler and W. Skorupa",
5067 title = "Spectroscopic characterization of phases formed by
5068 high-dose carbon ion implantation in silicon",
5071 journal = "J. Appl. Phys.",
5074 pages = "2978--2984",
5075 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5076 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5077 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5078 DEPENDENCE; PRECIPITATES; ANNEALING",
5079 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5080 doi = "10.1063/1.358714",
5083 @Article{romano-rodriguez96,
5084 title = "Detailed analysis of [beta]-Si{C} formation by high
5085 dose carbon ion implantation in silicon",
5086 journal = "Materials Science and Engineering B",
5091 note = "European Materials Research Society 1995 Spring
5092 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5093 Oxygen in Silicon and in Other Elemental
5096 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5097 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5098 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5099 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5101 keywords = "Silicon",
5102 keywords = "Ion implantation",
5103 notes = "incoherent 3c-sic precipitate",
5106 @Article{davidson75,
5107 title = "The iterative calculation of a few of the lowest
5108 eigenvalues and corresponding eigenvectors of large
5109 real-symmetric matrices",
5110 journal = "J. Comput. Phys.",
5117 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5118 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5119 author = "Ernest R. Davidson",
5123 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5125 author = "T. W. Adorno",
5126 ISBN = "978-3-518-01236-9",
5127 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5129 publisher = "Suhrkamp",