2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1080 doi = "10.1063/1.358826",
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1159 Silicon Materials Research for Electronic and
1160 Photovoltaic Applications",
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1264 journal = "Appl. Phys. A",
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1273 title = "On the balance between ion beam induced nanoparticle
1274 formation and displacive precipitate resolution in the
1276 journal = "Mater. Sci. Eng., C",
1281 note = "Current Trends in Nanoscience - from Materials to
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1293 application in buffer layer for Ga{N} epitaxial
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1300 note = "APHYS'03 Special Issue",
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1304 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
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1309 @Article{yamamoto04,
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1311 on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
1312 implantation into Si(1Â 1Â 1) substrate",
1313 journal = "Journal of Crystal Growth",
1318 note = "Proceedings of the 11th Biennial (US) Workshop on
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1329 title = "Substrates for gallium nitride epitaxy",
1330 journal = "Materials Science and Engineering: R: Reports",
1337 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
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1343 @Article{takeuchi91,
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1353 doi = "DOI: 10.1016/0022-0248(91)90817-O",
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1355 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1356 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1357 notes = "gan on 3c-sic (first time?)",
1361 author = "B. J. Alder and T. E. Wainwright",
1362 title = "Phase Transition for a Hard Sphere System",
1365 journal = "J. Chem. Phys.",
1368 pages = "1208--1209",
1369 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1370 doi = "10.1063/1.1743957",
1374 author = "B. J. Alder and T. E. Wainwright",
1375 title = "Studies in Molecular Dynamics. {I}. General Method",
1378 journal = "J. Chem. Phys.",
1382 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1386 @Article{tersoff_si1,
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1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. Lett.",
1397 doi = "10.1103/PhysRevLett.56.632",
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1432 title = "Empirical Interatomic Potential for Carbon, with
1433 Applications to Amorphous Carbon",
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1435 journal = "Phys. Rev. Lett.",
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1450 journal = "Phys. Rev. B",
1453 pages = "5566--5568",
1457 doi = "10.1103/PhysRevB.39.5566",
1458 publisher = "American Physical Society",
1462 title = "Carbon defects and defect reactions in silicon",
1463 author = "J. Tersoff",
1464 journal = "Phys. Rev. Lett.",
1467 pages = "1757--1760",
1471 doi = "10.1103/PhysRevLett.64.1757",
1472 publisher = "American Physical Society",
1476 title = "Point defects and dopant diffusion in silicon",
1477 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1478 journal = "Rev. Mod. Phys.",
1485 doi = "10.1103/RevModPhys.61.289",
1486 publisher = "American Physical Society",
1490 title = "Silicon carbide: synthesis and processing",
1491 journal = "Nucl. Instrum. Methods Phys. Res. B",
1496 note = "Radiation Effects in Insulators",
1498 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1504 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
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1506 journal = "Proceedings of the IEEE",
1507 title = "Thin film deposition and microelectronic and
1508 optoelectronic device fabrication and characterization
1509 in monocrystalline alpha and beta silicon carbide",
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1518 device fabrication;solid-state devices;surface
1519 chemistry;Schottky effect;Schottky gate field effect
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1525 doi = "10.1109/5.90132",
1527 notes = "sic growth methods",
1531 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1532 Lin and B. Sverdlov and M. Burns",
1534 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1535 ZnSe-based semiconductor device technologies",
1538 journal = "J. Appl. Phys.",
1541 pages = "1363--1398",
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1543 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1548 notes = "sic intro, properties",
1552 author = "Noch Unbekannt",
1553 title = "How to find references",
1554 journal = "Journal of Applied References",
1561 title = "Atomistic simulation of thermomechanical properties of
1563 author = "Meijie Tang and Sidney Yip",
1564 journal = "Phys. Rev. B",
1567 pages = "15150--15159",
1570 doi = "10.1103/PhysRevB.52.15150",
1571 notes = "modified tersoff, scale cutoff with volume, promising
1572 tersoff reparametrization",
1573 publisher = "American Physical Society",
1577 title = "Silicon carbide as a new {MEMS} technology",
1578 journal = "Sensors and Actuators A: Physical",
1584 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1585 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1586 author = "Pasqualina M. Sarro",
1588 keywords = "Silicon carbide",
1589 keywords = "Micromachining",
1590 keywords = "Mechanical stress",
1594 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1595 semiconductor for high-temperature applications: {A}
1597 journal = "Solid-State Electronics",
1600 pages = "1409--1422",
1603 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1604 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1605 author = "J. B. Casady and R. W. Johnson",
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1609 @Article{giancarli98,
1610 title = "Design requirements for Si{C}/Si{C} composites
1611 structural material in fusion power reactor blankets",
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1618 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1620 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1621 Marois and N. B. Morley and J. F. Salavy",
1625 title = "Electrical and optical characterization of Si{C}",
1626 journal = "Physica B: Condensed Matter",
1632 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1633 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1634 author = "G. Pensl and W. J. Choyke",
1638 title = "Investigation of growth processes of ingots of silicon
1639 carbide single crystals",
1640 journal = "J. Cryst. Growth",
1645 notes = "modified lely process",
1647 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1648 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1649 author = "Yu. M. Tairov and V. F. Tsvetkov",
1653 title = "General principles of growing large-size single
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1655 journal = "Journal of Crystal Growth",
1662 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1663 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1664 author = "Yu.M. Tairov and V. F. Tsvetkov",
1668 title = "Si{C} boule growth by sublimation vapor transport",
1669 journal = "Journal of Crystal Growth",
1676 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1677 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
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1679 R. H. Hopkins and W. J. Choyke",
1683 title = "Growth of large Si{C} single crystals",
1684 journal = "Journal of Crystal Growth",
1691 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
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1694 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1699 title = "Control of polytype formation by surface energy
1700 effects during the growth of Si{C} monocrystals by the
1701 sublimation method",
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1709 doi = "DOI: 10.1016/0022-0248(93)90397-F",
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1716 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1719 title = "Production of large-area single-crystal wafers of
1720 cubic Si{C} for semiconductor devices",
1723 journal = "Appl. Phys. Lett.",
1727 keywords = "silicon carbides; layers; chemical vapor deposition;
1729 URL = "http://link.aip.org/link/?APL/42/460/1",
1730 doi = "10.1063/1.93970",
1731 notes = "cvd of 3c-sic on si, sic buffer layer",
1735 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1736 and Hiroyuki Matsunami",
1738 title = "Epitaxial growth and electric characteristics of cubic
1742 journal = "J. Appl. Phys.",
1745 pages = "4889--4893",
1746 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1747 doi = "10.1063/1.338355",
1748 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1753 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1755 title = "Growth and Characterization of Cubic Si{C}
1756 Single-Crystal Films on Si",
1759 journal = "Journal of The Electrochemical Society",
1762 pages = "1558--1565",
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1767 notes = "blue light emitting diodes (led)",
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1774 title = "Improved beta-Si{C} heteroepitaxial films using
1775 off-axis Si substrates",
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1788 doi = "10.1063/1.98824",
1789 notes = "improved sic on off-axis si substrates, reduced apbs",
1793 title = "Crystal growth of Si{C} by step-controlled epitaxy",
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1802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1803 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
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1809 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1811 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1815 journal = "J. Appl. Phys.",
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1820 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1822 URL = "http://link.aip.org/link/?JAP/73/726/1",
1823 doi = "10.1063/1.353329",
1824 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
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1829 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1830 Yoganathan and J. Yang and P. Pirouz",
1832 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
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1836 journal = "Applied Physics Letters",
1839 pages = "1442--1444",
1840 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
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1850 author = "H. S. Kong and J. T. Glass and R. F. Davis",
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1872 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1873 Yoganathan and J. Yang and P. Pirouz",
1875 title = "Growth of improved quality 3{C}-Si{C} films on
1876 6{H}-Si{C} substrates",
1879 journal = "Appl. Phys. Lett.",
1882 pages = "1353--1355",
1883 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
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1894 Rozgonyi and K. L. More",
1896 title = "An examination of double positioning boundaries and
1897 interface misfit in beta-Si{C} films on alpha-Si{C}
1901 journal = "Journal of Applied Physics",
1904 pages = "2645--2650",
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1906 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1907 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1908 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1909 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1910 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1911 doi = "10.1063/1.341004",
1915 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1916 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1917 and W. J. Choyke and L. Clemen and M. Yoganathan",
1919 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1920 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1923 journal = "Applied Physics Letters",
1927 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1928 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1929 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1930 URL = "http://link.aip.org/link/?APL/59/333/1",
1931 doi = "10.1063/1.105587",
1935 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1936 Thokala and M. J. Loboda",
1938 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1939 films on 6{H}-Si{C} by chemical vapor deposition from
1943 journal = "J. Appl. Phys.",
1946 pages = "1271--1273",
1947 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1948 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1950 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1951 doi = "10.1063/1.360368",
1952 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1956 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
1957 properties of its p-n junction",
1958 journal = "Journal of Crystal Growth",
1965 doi = "DOI: 10.1016/0022-0248(87)90449-0",
1966 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
1967 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
1969 notes = "first time ssmbe of 3c-sic on 6h-sic",
1973 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1974 [alpha]-Si{C}(0001) at low temperatures by solid-source
1975 molecular beam epitaxy",
1976 journal = "J. Cryst. Growth",
1982 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1983 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1984 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1985 Schr{\"{o}}ter and W. Richter",
1986 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1989 @Article{fissel95_apl,
1990 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1992 title = "Low-temperature growth of Si{C} thin films on Si and
1993 6{H}--Si{C} by solid-source molecular beam epitaxy",
1996 journal = "Appl. Phys. Lett.",
1999 pages = "3182--3184",
2000 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2002 URL = "http://link.aip.org/link/?APL/66/3182/1",
2003 doi = "10.1063/1.113716",
2004 notes = "mbe 3c-sic on si and 6h-sic",
2008 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2009 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2011 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2012 migration enhanced epitaxy controlled to an atomic
2013 level using surface superstructures",
2016 journal = "Applied Physics Letters",
2019 pages = "1204--1206",
2020 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2021 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2023 URL = "http://link.aip.org/link/?APL/68/1204/1",
2024 doi = "10.1063/1.115969",
2025 notes = "ss mbe sic, superstructure, reconstruction",
2029 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2030 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2031 C. M. Bertoni and A. Catellani",
2032 journal = "Phys. Rev. Lett.",
2039 doi = "10.1103/PhysRevLett.91.136101",
2040 publisher = "American Physical Society",
2041 notes = "dft calculations mbe sic growth",
2045 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2047 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2051 journal = "Appl. Phys. Lett.",
2055 URL = "http://link.aip.org/link/?APL/18/509/1",
2056 doi = "10.1063/1.1653516",
2057 notes = "first time sic by ibs, follow cites for precipitation
2062 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2063 and E. V. Lubopytova",
2064 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2065 by ion implantation",
2066 publisher = "Taylor \& Francis",
2068 journal = "Radiation Effects",
2072 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2073 notes = "3c-sic for different temperatures, amorphous, poly,
2074 single crystalline",
2077 @Article{akimchenko80,
2078 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2079 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2080 title = "Structure and optical properties of silicon implanted
2081 by high doses of 70 and 310 ke{V} carbon ions",
2082 publisher = "Taylor \& Francis",
2084 journal = "Radiation Effects",
2088 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2089 notes = "3c-sic nucleation by thermal spikes",
2093 title = "Structure and annealing properties of silicon carbide
2094 thin layers formed by implantation of carbon ions in
2096 journal = "Thin Solid Films",
2103 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2104 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2105 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2110 title = "Characteristics of the synthesis of [beta]-Si{C} by
2111 the implantation of carbon ions into silicon",
2112 journal = "Thin Solid Films",
2119 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2120 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2121 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2126 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2127 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2128 Chater and J. A. Iulner and J. Davis",
2129 title = "Formation mechanisms and structures of insulating
2130 compounds formed in silicon by ion beam synthesis",
2131 publisher = "Taylor \& Francis",
2133 journal = "Radiation Effects",
2137 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2138 notes = "ibs, comparison with sio and sin, higher temp or
2143 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2144 J. Davis and G. E. Celler",
2146 title = "Formation of buried layers of beta-Si{C} using ion
2147 beam synthesis and incoherent lamp annealing",
2150 journal = "Appl. Phys. Lett.",
2153 pages = "2242--2244",
2154 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2155 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2156 URL = "http://link.aip.org/link/?APL/51/2242/1",
2157 doi = "10.1063/1.98953",
2158 notes = "nice tem images, sic by ibs",
2162 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2163 and M. Olivier and A. M. Papon and G. Rolland",
2165 title = "High-temperature ion beam synthesis of cubic Si{C}",
2168 journal = "Journal of Applied Physics",
2171 pages = "2908--2912",
2172 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2173 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2174 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2175 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2176 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2177 REACTIONS; MONOCRYSTALS",
2178 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2179 doi = "10.1063/1.346092",
2180 notes = "triple energy implantation to overcome high annealing
2185 author = "R. I. Scace and G. A. Slack",
2187 title = "Solubility of Carbon in Silicon and Germanium",
2190 journal = "J. Chem. Phys.",
2193 pages = "1551--1555",
2194 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2195 doi = "10.1063/1.1730236",
2196 notes = "solubility of c in c-si, si-c phase diagram",
2200 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2201 F. W. Saris and W. Vandervorst",
2203 title = "Role of {C} and {B} clusters in transient diffusion of
2207 journal = "Appl. Phys. Lett.",
2210 pages = "1150--1152",
2211 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2212 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2214 URL = "http://link.aip.org/link/?APL/68/1150/1",
2215 doi = "10.1063/1.115706",
2216 notes = "suppression of transient enhanced diffusion (ted)",
2220 title = "Implantation and transient boron diffusion: the role
2221 of the silicon self-interstitial",
2222 journal = "Nucl. Instrum. Methods Phys. Res. B",
2227 note = "Selected Papers of the Tenth International Conference
2228 on Ion Implantation Technology (IIT '94)",
2230 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2231 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2232 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2237 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2238 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2239 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2242 title = "Physical mechanisms of transient enhanced dopant
2243 diffusion in ion-implanted silicon",
2246 journal = "J. Appl. Phys.",
2249 pages = "6031--6050",
2250 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2251 doi = "10.1063/1.364452",
2252 notes = "ted, transient enhanced diffusion, c silicon trap",
2256 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2258 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2259 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2262 journal = "Appl. Phys. Lett.",
2266 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2267 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2268 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2270 URL = "http://link.aip.org/link/?APL/64/324/1",
2271 doi = "10.1063/1.111195",
2272 notes = "beta sic nano crystals in si, mbe, annealing",
2276 author = "Richard A. Soref",
2278 title = "Optical band gap of the ternary semiconductor Si[sub 1
2279 - x - y]Ge[sub x]{C}[sub y]",
2282 journal = "J. Appl. Phys.",
2285 pages = "2470--2472",
2286 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2287 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2289 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2290 doi = "10.1063/1.349403",
2291 notes = "band gap of strained si by c",
2295 author = "E Kasper",
2296 title = "Superlattices of group {IV} elements, a new
2297 possibility to produce direct band gap material",
2298 journal = "Physica Scripta",
2301 URL = "http://stacks.iop.org/1402-4896/T35/232",
2303 notes = "superlattices, convert indirect band gap into a
2308 author = "H. J. Osten and J. Griesche and S. Scalese",
2310 title = "Substitutional carbon incorporation in epitaxial
2311 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2312 molecular beam epitaxy",
2315 journal = "Appl. Phys. Lett.",
2319 keywords = "molecular beam epitaxial growth; semiconductor growth;
2320 wide band gap semiconductors; interstitials; silicon
2322 URL = "http://link.aip.org/link/?APL/74/836/1",
2323 doi = "10.1063/1.123384",
2324 notes = "substitutional c in si",
2327 @Article{hohenberg64,
2328 title = "Inhomogeneous Electron Gas",
2329 author = "P. Hohenberg and W. Kohn",
2330 journal = "Phys. Rev.",
2333 pages = "B864--B871",
2337 doi = "10.1103/PhysRev.136.B864",
2338 publisher = "American Physical Society",
2339 notes = "density functional theory, dft",
2343 title = "Self-Consistent Equations Including Exchange and
2344 Correlation Effects",
2345 author = "W. Kohn and L. J. Sham",
2346 journal = "Phys. Rev.",
2349 pages = "A1133--A1138",
2353 doi = "10.1103/PhysRev.140.A1133",
2354 publisher = "American Physical Society",
2355 notes = "dft, exchange and correlation",
2359 title = "Strain-stabilized highly concentrated pseudomorphic
2360 $Si1-x$$Cx$ layers in Si",
2361 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2363 journal = "Phys. Rev. Lett.",
2366 pages = "3578--3581",
2370 doi = "10.1103/PhysRevLett.72.3578",
2371 publisher = "American Physical Society",
2372 notes = "high c concentration in si, heterostructure, strained
2377 title = "Electron Transport Model for Strained Silicon-Carbon
2379 author = "Shu-Tong Chang and Chung-Yi Lin",
2380 journal = "Japanese J. Appl. Phys.",
2383 pages = "2257--2262",
2386 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2387 doi = "10.1143/JJAP.44.2257",
2388 publisher = "The Japan Society of Applied Physics",
2389 notes = "enhance of electron mobility in starined si",
2393 author = "H. J. Osten and P. Gaworzewski",
2395 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2396 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2400 journal = "J. Appl. Phys.",
2403 pages = "4977--4981",
2404 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2405 semiconductors; semiconductor epitaxial layers; carrier
2406 density; Hall mobility; interstitials; defect states",
2407 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2408 doi = "10.1063/1.366364",
2409 notes = "charge transport in strained si",
2413 title = "Carbon-mediated aggregation of self-interstitials in
2414 silicon: {A} large-scale molecular dynamics study",
2415 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2416 journal = "Phys. Rev. B",
2423 doi = "10.1103/PhysRevB.69.155214",
2424 publisher = "American Physical Society",
2425 notes = "simulation using promising tersoff reparametrization",
2429 title = "Event-Based Relaxation of Continuous Disordered
2431 author = "G. T. Barkema and Normand Mousseau",
2432 journal = "Phys. Rev. Lett.",
2435 pages = "4358--4361",
2439 doi = "10.1103/PhysRevLett.77.4358",
2440 publisher = "American Physical Society",
2441 notes = "activation relaxation technique, art, speed up slow
2446 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2447 Minoukadeh and F. Willaime",
2449 title = "Some improvements of the activation-relaxation
2450 technique method for finding transition pathways on
2451 potential energy surfaces",
2454 journal = "J. Chem. Phys.",
2460 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2461 surfaces; vacancies (crystal)",
2462 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2463 doi = "10.1063/1.3088532",
2464 notes = "improvements to art, refs for methods to find
2465 transition pathways",
2468 @Article{parrinello81,
2469 author = "M. Parrinello and A. Rahman",
2471 title = "Polymorphic transitions in single crystals: {A} new
2472 molecular dynamics method",
2475 journal = "J. Appl. Phys.",
2478 pages = "7182--7190",
2479 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2480 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2481 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2482 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2483 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2485 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2486 doi = "10.1063/1.328693",
2489 @Article{stillinger85,
2490 title = "Computer simulation of local order in condensed phases
2492 author = "Frank H. Stillinger and Thomas A. Weber",
2493 journal = "Phys. Rev. B",
2496 pages = "5262--5271",
2500 doi = "10.1103/PhysRevB.31.5262",
2501 publisher = "American Physical Society",
2505 title = "Empirical potential for hydrocarbons for use in
2506 simulating the chemical vapor deposition of diamond
2508 author = "Donald W. Brenner",
2509 journal = "Phys. Rev. B",
2512 pages = "9458--9471",
2516 doi = "10.1103/PhysRevB.42.9458",
2517 publisher = "American Physical Society",
2518 notes = "brenner hydro carbons",
2522 title = "Modeling of Covalent Bonding in Solids by Inversion of
2523 Cohesive Energy Curves",
2524 author = "Martin Z. Bazant and Efthimios Kaxiras",
2525 journal = "Phys. Rev. Lett.",
2528 pages = "4370--4373",
2532 doi = "10.1103/PhysRevLett.77.4370",
2533 publisher = "American Physical Society",
2534 notes = "first si edip",
2538 title = "Environment-dependent interatomic potential for bulk
2540 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2542 journal = "Phys. Rev. B",
2545 pages = "8542--8552",
2549 doi = "10.1103/PhysRevB.56.8542",
2550 publisher = "American Physical Society",
2551 notes = "second si edip",
2555 title = "Interatomic potential for silicon defects and
2557 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2558 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2559 journal = "Phys. Rev. B",
2562 pages = "2539--2550",
2566 doi = "10.1103/PhysRevB.58.2539",
2567 publisher = "American Physical Society",
2568 notes = "latest si edip, good dislocation explanation",
2572 title = "{PARCAS} molecular dynamics code",
2573 author = "K. Nordlund",
2578 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2580 author = "Arthur F. Voter",
2581 journal = "Phys. Rev. Lett.",
2584 pages = "3908--3911",
2588 doi = "10.1103/PhysRevLett.78.3908",
2589 publisher = "American Physical Society",
2590 notes = "hyperdynamics, accelerated md",
2594 author = "Arthur F. Voter",
2596 title = "A method for accelerating the molecular dynamics
2597 simulation of infrequent events",
2600 journal = "J. Chem. Phys.",
2603 pages = "4665--4677",
2604 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2605 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2606 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2607 energy functions; surface diffusion; reaction kinetics
2608 theory; potential energy surfaces",
2609 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2610 doi = "10.1063/1.473503",
2611 notes = "improved hyperdynamics md",
2614 @Article{sorensen2000,
2615 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2617 title = "Temperature-accelerated dynamics for simulation of
2621 journal = "J. Chem. Phys.",
2624 pages = "9599--9606",
2625 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2626 MOLECULAR DYNAMICS METHOD; surface diffusion",
2627 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2628 doi = "10.1063/1.481576",
2629 notes = "temperature accelerated dynamics, tad",
2633 title = "Parallel replica method for dynamics of infrequent
2635 author = "Arthur F. Voter",
2636 journal = "Phys. Rev. B",
2639 pages = "R13985--R13988",
2643 doi = "10.1103/PhysRevB.57.R13985",
2644 publisher = "American Physical Society",
2645 notes = "parallel replica method, accelerated md",
2649 author = "Xiongwu Wu and Shaomeng Wang",
2651 title = "Enhancing systematic motion in molecular dynamics
2655 journal = "J. Chem. Phys.",
2658 pages = "9401--9410",
2659 keywords = "molecular dynamics method; argon; Lennard-Jones
2660 potential; crystallisation; liquid theory",
2661 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2662 doi = "10.1063/1.478948",
2663 notes = "self guided md, sgmd, accelerated md, enhancing
2667 @Article{choudhary05,
2668 author = "Devashish Choudhary and Paulette Clancy",
2670 title = "Application of accelerated molecular dynamics schemes
2671 to the production of amorphous silicon",
2674 journal = "J. Chem. Phys.",
2680 keywords = "molecular dynamics method; silicon; glass structure;
2681 amorphous semiconductors",
2682 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2683 doi = "10.1063/1.1878733",
2684 notes = "explanation of sgmd and hyper md, applied to amorphous
2689 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2691 title = "Carbon precipitation in silicon: Why is it so
2695 journal = "Appl. Phys. Lett.",
2698 pages = "3336--3338",
2699 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2700 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2702 URL = "http://link.aip.org/link/?APL/62/3336/1",
2703 doi = "10.1063/1.109063",
2704 notes = "interfacial energy of cubic sic and si, si self
2705 interstitials necessary for precipitation, volume
2706 decrease, high interface energy",
2709 @Article{chaussende08,
2710 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2711 journal = "J. Cryst. Growth",
2716 note = "Proceedings of the E-MRS Conference, Symposium G -
2717 Substrates of Wide Bandgap Materials",
2719 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2720 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2721 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2722 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2723 and A. Andreadou and E. K. Polychroniadis and C.
2724 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2725 notes = "3c-sic crystal growth, sic fabrication + links,
2729 @Article{chaussende07,
2730 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2731 title = "Status of Si{C} bulk growth processes",
2732 journal = "Journal of Physics D: Applied Physics",
2736 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2738 notes = "review of sic single crystal growth methods, process
2743 title = "Forces in Molecules",
2744 author = "R. P. Feynman",
2745 journal = "Phys. Rev.",
2752 doi = "10.1103/PhysRev.56.340",
2753 publisher = "American Physical Society",
2754 notes = "hellmann feynman forces",
2758 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2759 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2760 their Contrasting Properties",
2761 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2763 journal = "Phys. Rev. Lett.",
2770 doi = "10.1103/PhysRevLett.84.943",
2771 publisher = "American Physical Society",
2772 notes = "si sio2 and sic sio2 interface",
2775 @Article{djurabekova08,
2776 title = "Atomistic simulation of the interface structure of Si
2777 nanocrystals embedded in amorphous silica",
2778 author = "Flyura Djurabekova and Kai Nordlund",
2779 journal = "Phys. Rev. B",
2786 doi = "10.1103/PhysRevB.77.115325",
2787 publisher = "American Physical Society",
2788 notes = "nc-si in sio2, interface energy, nc construction,
2789 angular distribution, coordination",
2793 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2794 W. Liang and J. Zou",
2796 title = "Nature of interfacial defects and their roles in
2797 strain relaxation at highly lattice mismatched
2798 3{C}-Si{C}/Si (001) interface",
2801 journal = "J. Appl. Phys.",
2807 keywords = "anelastic relaxation; crystal structure; dislocations;
2808 elemental semiconductors; semiconductor growth;
2809 semiconductor thin films; silicon; silicon compounds;
2810 stacking faults; wide band gap semiconductors",
2811 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2812 doi = "10.1063/1.3234380",
2813 notes = "sic/si interface, follow refs, tem image
2814 deconvolution, dislocation defects",
2817 @Article{kitabatake93,
2818 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2821 title = "Simulations and experiments of Si{C} heteroepitaxial
2822 growth on Si(001) surface",
2825 journal = "J. Appl. Phys.",
2828 pages = "4438--4445",
2829 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2830 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2831 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2832 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2833 doi = "10.1063/1.354385",
2834 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2838 @Article{kitabatake97,
2839 author = "Makoto Kitabatake",
2840 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2841 Heteroepitaxial Growth",
2842 publisher = "WILEY-VCH Verlag",
2844 journal = "physica status solidi (b)",
2847 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2848 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2849 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2853 title = "Strain relaxation and thermal stability of the
2854 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2856 journal = "Thin Solid Films",
2863 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2864 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2865 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2866 keywords = "Strain relaxation",
2867 keywords = "Interfaces",
2868 keywords = "Thermal stability",
2869 keywords = "Molecular dynamics",
2870 notes = "tersoff sic/si interface study",
2874 title = "Ab initio Study of Misfit Dislocations at the
2875 $Si{C}/Si(001)$ Interface",
2876 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2878 journal = "Phys. Rev. Lett.",
2885 doi = "10.1103/PhysRevLett.89.156101",
2886 publisher = "American Physical Society",
2887 notes = "sic/si interface study",
2890 @Article{pizzagalli03,
2891 title = "Theoretical investigations of a highly mismatched
2892 interface: Si{C}/Si(001)",
2893 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2895 journal = "Phys. Rev. B",
2902 doi = "10.1103/PhysRevB.68.195302",
2903 publisher = "American Physical Society",
2904 notes = "tersoff md and ab initio sic/si interface study",
2908 title = "Atomic configurations of dislocation core and twin
2909 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2910 electron microscopy",
2911 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2912 H. Zheng and J. W. Liang",
2913 journal = "Phys. Rev. B",
2920 doi = "10.1103/PhysRevB.75.184103",
2921 publisher = "American Physical Society",
2922 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2926 @Article{hornstra58,
2927 title = "Dislocations in the diamond lattice",
2928 journal = "Journal of Physics and Chemistry of Solids",
2935 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2936 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2937 author = "J. Hornstra",
2938 notes = "dislocations in diamond lattice",
2942 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2943 Ion `Hot' Implantation",
2944 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2945 Hirao and Naoki Arai and Tomio Izumi",
2946 journal = "Japanese Journal of Applied Physics",
2948 number = "Part 1, No. 2A",
2952 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2953 doi = "10.1143/JJAP.31.343",
2954 publisher = "The Japan Society of Applied Physics",
2955 notes = "c-c bonds in c implanted si, hot implantation
2956 efficiency, c-c hard to break by thermal annealing",
2959 @Article{eichhorn99,
2960 author = "F. Eichhorn and N. Schell and W. Matz and R.
2963 title = "Strain and Si{C} particle formation in silicon
2964 implanted with carbon ions of medium fluence studied by
2965 synchrotron x-ray diffraction",
2968 journal = "J. Appl. Phys.",
2971 pages = "4184--4187",
2972 keywords = "silicon; carbon; elemental semiconductors; chemical
2973 interdiffusion; ion implantation; X-ray diffraction;
2974 precipitation; semiconductor doping",
2975 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2976 doi = "10.1063/1.371344",
2977 notes = "sic conversion by ibs, detected substitutional carbon,
2978 expansion of si lattice",
2981 @Article{eichhorn02,
2982 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2983 Metzger and W. Matz and R. K{\"{o}}gler",
2985 title = "Structural relation between Si and Si{C} formed by
2986 carbon ion implantation",
2989 journal = "J. Appl. Phys.",
2992 pages = "1287--1292",
2993 keywords = "silicon compounds; wide band gap semiconductors; ion
2994 implantation; annealing; X-ray scattering; transmission
2995 electron microscopy",
2996 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2997 doi = "10.1063/1.1428105",
2998 notes = "3c-sic alignement to si host in ibs depending on
2999 temperature, might explain c into c sub trafo",
3003 author = "G Lucas and M Bertolus and L Pizzagalli",
3004 title = "An environment-dependent interatomic potential for
3005 silicon carbide: calculation of bulk properties,
3006 high-pressure phases, point and extended defects, and
3007 amorphous structures",
3008 journal = "J. Phys.: Condens. Matter",
3012 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3018 author = "J Godet and L Pizzagalli and S Brochard and P
3020 title = "Comparison between classical potentials and ab initio
3021 methods for silicon under large shear",
3022 journal = "J. Phys.: Condens. Matter",
3026 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3028 notes = "comparison of empirical potentials, stillinger weber,
3029 edip, tersoff, ab initio",
3032 @Article{moriguchi98,
3033 title = "Verification of Tersoff's Potential for Static
3034 Structural Analysis of Solids of Group-{IV} Elements",
3035 author = "Koji Moriguchi and Akira Shintani",
3036 journal = "Japanese J. Appl. Phys.",
3038 number = "Part 1, No. 2",
3042 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3043 doi = "10.1143/JJAP.37.414",
3044 publisher = "The Japan Society of Applied Physics",
3045 notes = "tersoff stringent test",
3048 @Article{mazzarolo01,
3049 title = "Low-energy recoils in crystalline silicon: Quantum
3051 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3052 Lulli and Eros Albertazzi",
3053 journal = "Phys. Rev. B",
3060 doi = "10.1103/PhysRevB.63.195207",
3061 publisher = "American Physical Society",
3064 @Article{holmstroem08,
3065 title = "Threshold defect production in silicon determined by
3066 density functional theory molecular dynamics
3068 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3069 journal = "Phys. Rev. B",
3076 doi = "10.1103/PhysRevB.78.045202",
3077 publisher = "American Physical Society",
3078 notes = "threshold displacement comparison empirical and ab
3082 @Article{nordlund97,
3083 title = "Repulsive interatomic potentials calculated using
3084 Hartree-Fock and density-functional theory methods",
3085 journal = "Nucl. Instrum. Methods Phys. Res. B",
3092 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3093 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3094 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3095 notes = "repulsive ab initio potential",
3099 title = "Efficiency of ab-initio total energy calculations for
3100 metals and semiconductors using a plane-wave basis
3102 journal = "Comput. Mater. Sci.",
3109 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3110 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3111 author = "G. Kresse and J. Furthm{\"{u}}ller",
3116 title = "Projector augmented-wave method",
3117 author = "P. E. Bl{\"o}chl",
3118 journal = "Phys. Rev. B",
3121 pages = "17953--17979",
3125 doi = "10.1103/PhysRevB.50.17953",
3126 publisher = "American Physical Society",
3127 notes = "paw method",
3131 title = "Norm-Conserving Pseudopotentials",
3132 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3133 journal = "Phys. Rev. Lett.",
3136 pages = "1494--1497",
3140 doi = "10.1103/PhysRevLett.43.1494",
3141 publisher = "American Physical Society",
3142 notes = "norm-conserving pseudopotentials",
3145 @Article{vanderbilt90,
3146 title = "Soft self-consistent pseudopotentials in a generalized
3147 eigenvalue formalism",
3148 author = "David Vanderbilt",
3149 journal = "Phys. Rev. B",
3152 pages = "7892--7895",
3156 doi = "10.1103/PhysRevB.41.7892",
3157 publisher = "American Physical Society",
3158 notes = "vasp pseudopotentials",
3162 title = "Accurate and simple density functional for the
3163 electronic exchange energy: Generalized gradient
3165 author = "John P. Perdew and Yue Wang",
3166 journal = "Phys. Rev. B",
3169 pages = "8800--8802",
3173 doi = "10.1103/PhysRevB.33.8800",
3174 publisher = "American Physical Society",
3175 notes = "rapid communication gga",
3179 title = "Generalized gradient approximations for exchange and
3180 correlation: {A} look backward and forward",
3181 journal = "Physica B: Condensed Matter",
3188 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3189 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3190 author = "John P. Perdew",
3191 notes = "gga overview",
3195 title = "Atoms, molecules, solids, and surfaces: Applications
3196 of the generalized gradient approximation for exchange
3198 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3199 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3200 and Carlos Fiolhais",
3201 journal = "Phys. Rev. B",
3204 pages = "6671--6687",
3208 doi = "10.1103/PhysRevB.46.6671",
3209 publisher = "American Physical Society",
3210 notes = "gga pw91 (as in vasp)",
3213 @Article{baldereschi73,
3214 title = "Mean-Value Point in the Brillouin Zone",
3215 author = "A. Baldereschi",
3216 journal = "Phys. Rev. B",
3219 pages = "5212--5215",
3223 doi = "10.1103/PhysRevB.7.5212",
3224 publisher = "American Physical Society",
3225 notes = "mean value k point",
3229 title = "Ab initio pseudopotential calculations of dopant
3231 journal = "Comput. Mater. Sci.",
3238 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3239 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3240 author = "Jing Zhu",
3241 keywords = "TED (transient enhanced diffusion)",
3242 keywords = "Boron dopant",
3243 keywords = "Carbon dopant",
3244 keywords = "Defect",
3245 keywords = "ab initio pseudopotential method",
3246 keywords = "Impurity cluster",
3247 notes = "binding of c to si interstitial, c in si defects",
3251 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3253 title = "Si{C} buried layer formation by ion beam synthesis at
3257 journal = "Appl. Phys. Lett.",
3260 pages = "2646--2648",
3261 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3262 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3263 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3264 ELECTRON MICROSCOPY",
3265 URL = "http://link.aip.org/link/?APL/66/2646/1",
3266 doi = "10.1063/1.113112",
3267 notes = "precipitation mechanism by substitutional carbon, si
3268 self interstitials react with further implanted c",
3272 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3273 Kolodzey and A. Hairie",
3275 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3279 journal = "J. Appl. Phys.",
3282 pages = "4631--4633",
3283 keywords = "silicon compounds; precipitation; localised modes;
3284 semiconductor epitaxial layers; infrared spectra;
3285 Fourier transform spectra; thermal stability;
3287 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3288 doi = "10.1063/1.368703",
3289 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3293 author = "R Jones and B J Coomer and P R Briddon",
3294 title = "Quantum mechanical modelling of defects in
3296 journal = "J. Phys.: Condens. Matter",
3300 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3302 notes = "ab inito init, vibrational modes, c defect in si",
3306 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3307 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3308 J. E. Greene and S. G. Bishop",
3310 title = "Carbon incorporation pathways and lattice sites in
3311 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3312 molecular-beam epitaxy",
3315 journal = "J. Appl. Phys.",
3318 pages = "5716--5727",
3319 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3320 doi = "10.1063/1.1465122",
3321 notes = "c substitutional incorporation pathway, dft and expt",
3325 title = "Dynamic properties of interstitial carbon and
3326 carbon-carbon pair defects in silicon",
3327 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3329 journal = "Phys. Rev. B",
3332 pages = "2188--2194",
3336 doi = "10.1103/PhysRevB.55.2188",
3337 publisher = "American Physical Society",
3338 notes = "ab initio c in si and di-carbon defect, no formation
3339 energies, different migration barriers and paths",
3343 title = "Interstitial carbon and the carbon-carbon pair in
3344 silicon: Semiempirical electronic-structure
3346 author = "Matthew J. Burnard and Gary G. DeLeo",
3347 journal = "Phys. Rev. B",
3350 pages = "10217--10225",
3354 doi = "10.1103/PhysRevB.47.10217",
3355 publisher = "American Physical Society",
3356 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3357 carbon defect, formation energies",
3361 title = "Electronic structure of interstitial carbon in
3363 author = "Morgan Besson and Gary G. DeLeo",
3364 journal = "Phys. Rev. B",
3367 pages = "4028--4033",
3371 doi = "10.1103/PhysRevB.43.4028",
3372 publisher = "American Physical Society",
3376 title = "Review of atomistic simulations of surface diffusion
3377 and growth on semiconductors",
3378 journal = "Comput. Mater. Sci.",
3383 note = "Proceedings of the Workshop on Virtual Molecular Beam
3386 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3387 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3388 author = "Efthimios Kaxiras",
3389 notes = "might contain c 100 db formation energy, overview md,
3390 tight binding, first principles",
3393 @Article{kaukonen98,
3394 title = "Effect of {N} and {B} doping on the growth of {CVD}
3396 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3398 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3399 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3401 journal = "Phys. Rev. B",
3404 pages = "9965--9970",
3408 doi = "10.1103/PhysRevB.57.9965",
3409 publisher = "American Physical Society",
3410 notes = "constrained conjugate gradient relaxation technique
3415 title = "Correlation between the antisite pair and the ${DI}$
3417 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3418 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3420 journal = "Phys. Rev. B",
3427 doi = "10.1103/PhysRevB.67.155203",
3428 publisher = "American Physical Society",
3432 title = "Production and recovery of defects in Si{C} after
3433 irradiation and deformation",
3434 journal = "J. Nucl. Mater.",
3437 pages = "1803--1808",
3441 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3442 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3443 author = "J. Chen and P. Jung and H. Klein",
3447 title = "Accumulation, dynamic annealing and thermal recovery
3448 of ion-beam-induced disorder in silicon carbide",
3449 journal = "Nucl. Instrum. Methods Phys. Res. B",
3456 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3457 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3458 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3461 @Article{bockstedte03,
3462 title = "Ab initio study of the migration of intrinsic defects
3464 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3466 journal = "Phys. Rev. B",
3473 doi = "10.1103/PhysRevB.68.205201",
3474 publisher = "American Physical Society",
3475 notes = "defect migration in sic",
3479 title = "Theoretical study of vacancy diffusion and
3480 vacancy-assisted clustering of antisites in Si{C}",
3481 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3483 journal = "Phys. Rev. B",
3490 doi = "10.1103/PhysRevB.68.155208",
3491 publisher = "American Physical Society",
3495 journal = "Telegrafiya i Telefoniya bez Provodov",
3499 author = "O. V. Lossev",
3503 title = "Luminous carborundum detector and detection effect and
3504 oscillations with crystals",
3505 journal = "Philosophical Magazine Series 7",
3508 pages = "1024--1044",
3510 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3511 author = "O. V. Lossev",
3515 journal = "Physik. Zeitschr.",
3519 author = "O. V. Lossev",
3523 journal = "Physik. Zeitschr.",
3527 author = "O. V. Lossev",
3531 journal = "Physik. Zeitschr.",
3535 author = "O. V. Lossev",
3539 title = "A note on carborundum",
3540 journal = "Electrical World",
3544 author = "H. J. Round",
3547 @Article{vashishath08,
3548 title = "Recent trends in silicon carbide device research",
3549 journal = "Mj. Int. J. Sci. Tech.",
3554 author = "Munish Vashishath and Ashoke K. Chatterjee",
3555 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3556 notes = "sic polytype electronic properties",
3560 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3562 title = "Growth and Properties of beta-Si{C} Single Crystals",
3565 journal = "Journal of Applied Physics",
3569 URL = "http://link.aip.org/link/?JAP/37/333/1",
3570 doi = "10.1063/1.1707837",
3571 notes = "sic melt growth",
3575 author = "A. E. van Arkel and J. H. de Boer",
3576 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3578 publisher = "WILEY-VCH Verlag GmbH",
3580 journal = "Z. Anorg. Chem.",
3583 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3584 doi = "10.1002/zaac.19251480133",
3585 notes = "van arkel apparatus",
3589 author = "K. Moers",
3591 journal = "Z. Anorg. Chem.",
3594 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3599 author = "J. T. Kendall",
3600 title = "Electronic Conduction in Silicon Carbide",
3603 journal = "The Journal of Chemical Physics",
3607 URL = "http://link.aip.org/link/?JCP/21/821/1",
3608 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3613 author = "J. A. Lely",
3615 journal = "Ber. Deut. Keram. Ges.",
3618 notes = "lely sublimation growth process",
3621 @Article{knippenberg63,
3622 author = "W. F. Knippenberg",
3624 journal = "Philips Res. Repts.",
3627 notes = "acheson process",
3630 @Article{hoffmann82,
3631 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3634 title = "Silicon carbide blue light emitting diodes with
3635 improved external quantum efficiency",
3638 journal = "Journal of Applied Physics",
3641 pages = "6962--6967",
3642 keywords = "light emitting diodes; silicon carbides; quantum
3643 efficiency; visible radiation; experimental data;
3644 epitaxy; fabrication; medium temperature; layers;
3645 aluminium; nitrogen; substrates; pn junctions;
3646 electroluminescence; spectra; current density;
3648 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3649 doi = "10.1063/1.330041",
3650 notes = "blue led, sublimation process",
3654 author = "Philip Neudeck",
3655 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3656 Road 44135 Cleveland OH",
3657 title = "Progress in silicon carbide semiconductor electronics
3659 journal = "Journal of Electronic Materials",
3660 publisher = "Springer Boston",
3662 keyword = "Chemistry and Materials Science",
3666 URL = "http://dx.doi.org/10.1007/BF02659688",
3667 note = "10.1007/BF02659688",
3669 notes = "sic data, advantages of 3c sic",
3672 @Article{bhatnagar93,
3673 author = "M. Bhatnagar and B. J. Baliga",
3674 journal = "Electron Devices, IEEE Transactions on",
3675 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3682 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3683 rectifiers;Si;SiC;breakdown voltages;drift region
3684 properties;output characteristics;power MOSFETs;power
3685 semiconductor devices;switching characteristics;thermal
3686 analysis;Schottky-barrier diodes;electric breakdown of
3687 solids;insulated gate field effect transistors;power
3688 transistors;semiconductor materials;silicon;silicon
3689 compounds;solid-state rectifiers;thermal analysis;",
3690 doi = "10.1109/16.199372",
3692 notes = "comparison 3c 6h sic and si devices",
3696 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3697 A. Powell and C. S. Salupo and L. G. Matus",
3698 journal = "Electron Devices, IEEE Transactions on",
3699 title = "Electrical properties of epitaxial 3{C}- and
3700 6{H}-Si{C} p-n junction diodes produced side-by-side on
3701 6{H}-Si{C} substrates",
3707 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3708 C;6H-SiC layers;6H-SiC substrates;CVD
3709 process;SiC;chemical vapor deposition;doping;electrical
3710 properties;epitaxial layers;light
3711 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3712 diodes;polytype;rectification characteristics;reverse
3713 leakage current;reverse voltages;temperature;leakage
3714 currents;power electronics;semiconductor
3715 diodes;semiconductor epitaxial layers;semiconductor
3716 growth;semiconductor materials;silicon
3717 compounds;solid-state rectifiers;substrates;vapour
3718 phase epitaxial growth;",
3719 doi = "10.1109/16.285038",
3721 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3726 author = "N. Schulze and D. L. Barrett and G. Pensl",
3728 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3729 single crystals by physical vapor transport",
3732 journal = "Applied Physics Letters",
3735 pages = "1632--1634",
3736 keywords = "silicon compounds; semiconductor materials;
3737 semiconductor growth; crystal growth from vapour;
3738 photoluminescence; Hall mobility",
3739 URL = "http://link.aip.org/link/?APL/72/1632/1",
3740 doi = "10.1063/1.121136",
3741 notes = "micropipe free 6h-sic pvt growth",
3745 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3747 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3750 journal = "Applied Physics Letters",
3754 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3755 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3756 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3757 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3759 URL = "http://link.aip.org/link/?APL/50/221/1",
3760 doi = "10.1063/1.97667",
3761 notes = "apb 3c-sic heteroepitaxy on si",
3764 @Article{shibahara86,
3765 title = "Surface morphology of cubic Si{C}(100) grown on
3766 Si(100) by chemical vapor deposition",
3767 journal = "Journal of Crystal Growth",
3774 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3775 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3776 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3778 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3781 @Article{desjardins96,
3782 author = "P. Desjardins and J. E. Greene",
3784 title = "Step-flow epitaxial growth on two-domain surfaces",
3787 journal = "Journal of Applied Physics",
3790 pages = "1423--1434",
3791 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3792 FILM GROWTH; SURFACE STRUCTURE",
3793 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3794 doi = "10.1063/1.360980",
3795 notes = "apb model",
3799 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3801 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3802 carbonization of silicon",
3805 journal = "Journal of Applied Physics",
3808 pages = "2070--2073",
3809 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3810 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3812 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3813 doi = "10.1063/1.360184",
3814 notes = "ssmbe of sic on si, lower temperatures",
3818 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3819 {MBE} using surface superstructure",
3820 journal = "Journal of Crystal Growth",
3827 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3828 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3829 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3830 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3831 notes = "gas source mbe of 3c-sic on 6h-sic",
3834 @Article{yoshinobu92,
3835 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3836 and Takashi Fuyuki and Hiroyuki Matsunami",
3838 title = "Lattice-matched epitaxial growth of single crystalline
3839 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3840 molecular beam epitaxy",
3843 journal = "Applied Physics Letters",
3847 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3848 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3849 INTERFACE STRUCTURE",
3850 URL = "http://link.aip.org/link/?APL/60/824/1",
3851 doi = "10.1063/1.107430",
3852 notes = "gas source mbe of 3c-sic on 6h-sic",
3855 @Article{yoshinobu90,
3856 title = "Atomic level control in gas source {MBE} growth of
3858 journal = "Journal of Crystal Growth",
3865 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3866 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3867 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3868 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3869 notes = "gas source mbe of 3c-sic on 3c-sic",
3873 title = "Atomic layer epitaxy controlled by surface
3874 superstructures in Si{C}",
3875 journal = "Thin Solid Films",
3882 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3883 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3884 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3886 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3891 title = "Microscopic mechanisms of accurate layer-by-layer
3892 growth of [beta]-Si{C}",
3893 journal = "Thin Solid Films",
3900 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3901 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3902 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3903 and S. Misawa and E. Sakuma and S. Yoshida",
3904 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3909 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3911 title = "Effects of gas flow ratio on silicon carbide thin film
3912 growth mode and polytype formation during gas-source
3913 molecular beam epitaxy",
3916 journal = "Applied Physics Letters",
3919 pages = "2851--2853",
3920 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3921 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3922 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3924 URL = "http://link.aip.org/link/?APL/65/2851/1",
3925 doi = "10.1063/1.112513",
3926 notes = "gas source mbe of 6h-sic on 6h-sic",
3930 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3931 title = "Heterointerface Control and Epitaxial Growth of
3932 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3933 publisher = "WILEY-VCH Verlag",
3935 journal = "physica status solidi (b)",
3938 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3943 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3944 journal = "Journal of Crystal Growth",
3951 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3952 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3953 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3954 keywords = "Reflection high-energy electron diffraction (RHEED)",
3955 keywords = "Scanning electron microscopy (SEM)",
3956 keywords = "Silicon carbide",
3957 keywords = "Silicon",
3958 keywords = "Island growth",
3959 notes = "lower temperature, 550-700",
3962 @Article{hatayama95,
3963 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3964 on Si using hydrocarbon radicals by gas source
3965 molecular beam epitaxy",
3966 journal = "Journal of Crystal Growth",
3973 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3974 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3975 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3976 and Hiroyuki Matsunami",
3980 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3981 title = "The Preference of Silicon Carbide for Growth in the
3982 Metastable Cubic Form",
3983 journal = "Journal of the American Ceramic Society",
3986 publisher = "Blackwell Publishing Ltd",
3988 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
3989 doi = "10.1111/j.1151-2916.1991.tb06811.x",
3990 pages = "2630--2633",
3991 keywords = "silicon carbide, crystal growth, crystal structure,
3992 calculations, stability",
3994 notes = "3c-sic metastable, 3c-sic preferred growth, sic
3995 polytype dft calculation refs",
3998 @Article{allendorf91,
3999 title = "The adsorption of {H}-atoms on polycrystalline
4000 [beta]-silicon carbide",
4001 journal = "Surface Science",
4008 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4009 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4010 author = "Mark D. Allendorf and Duane A. Outka",
4011 notes = "h adsorption on 3c-sic",
4014 @Article{eaglesham93,
4015 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4016 D. P. Adams and S. M. Yalisove",
4018 title = "Effect of {H} on Si molecular-beam epitaxy",
4021 journal = "Journal of Applied Physics",
4024 pages = "6615--6618",
4025 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4026 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4027 DIFFUSION; ADSORPTION",
4028 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4029 doi = "10.1063/1.355101",
4030 notes = "h incorporation on si surface, lower surface
4035 author = "Ronald C. Newman",
4036 title = "Carbon in Crystalline Silicon",
4037 journal = "MRS Online Proceedings Library",
4042 doi = "10.1557/PROC-59-403",
4043 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4044 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4048 author = "U. Gösele",
4049 title = "The Role of Carbon and Point Defects in Silicon",
4050 journal = "MRS Online Proceedings Library",
4055 doi = "10.1557/PROC-59-419",
4056 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4057 eprint = "http://journals.cambridge.org/article_S1946427400543681",