2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Annalen der Physik",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
24 journal = "Zeitschrift für Physik A Hadrons and Nuclei",
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Applied Surface Science",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "Journal of Physics and Chemistry of Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "Journal of Applied Physics",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "Journal of Physics and Chemistry of Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon Carbide Electronic Materials and Devices",
138 journal = "MRS Bull.",
145 author = "G. R. Fisher and P. Barnes",
146 title = "Towards a unified view of polytypism in silicon
148 journal = "Philos. Mag. B",
152 notes = "sic polytypes",
156 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
157 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
158 Serre and A. Perez-Rodriguez",
159 title = "Synthesis of nano-sized Si{C} precipitates in Si by
160 simultaneous dual-beam implantation of {C}+ and Si+
162 journal = "Appl. Phys. A: Mater. Sci. Process.",
167 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
168 notes = "dual implantation, sic prec enhanced by vacancies,
169 precipitation by interstitial and substitutional
170 carbon, both mechanisms explained + refs",
174 title = "Carbon-mediated effects in silicon and in
175 silicon-related materials",
176 journal = "Materials Chemistry and Physics",
183 doi = "DOI: 10.1016/0254-0584(95)01673-I",
184 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
185 author = "W. Skorupa and R. A. Yankov",
186 notes = "review of silicon carbon compound",
190 author = "P. S. de Laplace",
191 title = "Th\'eorie analytique des probabilit\'es",
192 series = "Oeuvres Compl\`etes de Laplace",
194 publisher = "Gauthier-Villars",
198 @Article{mattoni2007,
199 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
200 title = "{Atomistic modeling of brittleness in covalent
202 journal = "Phys. Rev. B",
208 doi = "10.1103/PhysRevB.76.224103",
209 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
210 longe(r)-range-interactions, brittle propagation of
211 fracture, more available potentials, universal energy
212 relation (uer), minimum range model (mrm)",
216 title = "Comparative study of silicon empirical interatomic
218 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
219 journal = "Phys. Rev. B",
222 pages = "2250--2279",
226 doi = "10.1103/PhysRevB.46.2250",
227 publisher = "American Physical Society",
228 notes = "comparison of classical potentials for si",
232 title = "Stress relaxation in $a-Si$ induced by ion
234 author = "H. M. Urbassek M. Koster",
235 journal = "Phys. Rev. B",
238 pages = "11219--11224",
242 doi = "10.1103/PhysRevB.62.11219",
243 publisher = "American Physical Society",
244 notes = "virial derivation for 3-body tersoff potential",
247 @Article{breadmore99,
248 title = "Direct simulation of ion-beam-induced stressing and
249 amorphization of silicon",
250 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
251 journal = "Phys. Rev. B",
254 pages = "12610--12616",
258 doi = "10.1103/PhysRevB.60.12610",
259 publisher = "American Physical Society",
260 notes = "virial derivation for 3-body tersoff potential",
264 title = "First-Principles Calculation of Stress",
265 author = "O. H. Nielsen and Richard M. Martin",
266 journal = "Phys. Rev. Lett.",
273 doi = "10.1103/PhysRevLett.50.697",
274 publisher = "American Physical Society",
275 notes = "generalization of virial theorem",
279 title = "Quantum-mechanical theory of stress and force",
280 author = "O. H. Nielsen and Richard M. Martin",
281 journal = "Phys. Rev. B",
284 pages = "3780--3791",
288 doi = "10.1103/PhysRevB.32.3780",
289 publisher = "American Physical Society",
290 notes = "dft virial stress and forces",
294 author = "Henri Moissan",
295 title = "Nouvelles recherches sur la météorité de Cañon
297 journal = "Comptes rendus de l'Académie des Sciences",
304 author = "Y. S. Park",
305 title = "Si{C} Materials and Devices",
306 publisher = "Academic Press",
307 address = "San Diego",
312 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
313 Calvin H. Carter Jr. and D. Asbury",
314 title = "Si{C} Seeded Boule Growth",
315 journal = "Materials Science Forum",
319 notes = "modified lely process, micropipes",
323 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
324 Thermodynamical Properties of Lennard-Jones Molecules",
325 author = "Loup Verlet",
326 journal = "Phys. Rev.",
332 doi = "10.1103/PhysRev.159.98",
333 publisher = "American Physical Society",
334 notes = "velocity verlet integration algorithm equation of
338 @Article{berendsen84,
339 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
340 Gunsteren and A. DiNola and J. R. Haak",
342 title = "Molecular dynamics with coupling to an external bath",
345 journal = "J. Chem. Phys.",
348 pages = "3684--3690",
349 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
350 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
351 URL = "http://link.aip.org/link/?JCP/81/3684/1",
352 doi = "10.1063/1.448118",
353 notes = "berendsen thermostat barostat",
357 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
359 title = "Molecular dynamics determination of defect energetics
360 in beta -Si{C} using three representative empirical
362 journal = "Modell. Simul. Mater. Sci. Eng.",
366 URL = "http://stacks.iop.org/0965-0393/3/615",
367 notes = "comparison of tersoff, pearson and eam for defect
368 energetics in sic; (m)eam parameters for sic",
373 title = "Relationship between the embedded-atom method and
375 author = "Donald W. Brenner",
376 journal = "Phys. Rev. Lett.",
383 doi = "10.1103/PhysRevLett.63.1022",
384 publisher = "American Physical Society",
385 notes = "relation of tersoff and eam potential",
389 title = "Molecular-dynamics study of self-interstitials in
391 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
392 journal = "Phys. Rev. B",
395 pages = "9552--9558",
399 doi = "10.1103/PhysRevB.35.9552",
400 publisher = "American Physical Society",
401 notes = "selft-interstitials in silicon, stillinger-weber,
402 calculation of defect formation energy, defect
407 title = "Extended interstitials in silicon and germanium",
408 author = "H. R. Schober",
409 journal = "Phys. Rev. B",
412 pages = "13013--13015",
416 doi = "10.1103/PhysRevB.39.13013",
417 publisher = "American Physical Society",
418 notes = "stillinger-weber silicon 110 stable and metastable
419 dumbbell configuration",
423 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
424 Defect accumulation, topological features, and
426 author = "F. Gao and W. J. Weber",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.024106",
435 publisher = "American Physical Society",
436 notes = "sic intro, si cascade in 3c-sic, amorphization,
437 tersoff modified, pair correlation of amorphous sic, md
441 @Article{devanathan98,
442 title = "Computer simulation of a 10 ke{V} Si displacement
444 journal = "Nucl. Instrum. Methods Phys. Res. B",
450 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
451 author = "R. Devanathan and W. J. Weber and T. Diaz de la
453 notes = "modified tersoff short range potential, ab initio
457 @Article{devanathan98_2,
458 title = "Displacement threshold energies in [beta]-Si{C}",
459 journal = "J. Nucl. Mater.",
465 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
466 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
468 notes = "modified tersoff, ab initio, combined ab initio
472 @Article{kitabatake00,
473 title = "Si{C}/Si heteroepitaxial growth",
474 author = "M. Kitabatake",
475 journal = "Thin Solid Films",
480 notes = "md simulation, sic si heteroepitaxy, mbe",
484 title = "Intrinsic point defects in crystalline silicon:
485 Tight-binding molecular dynamics studies of
486 self-diffusion, interstitial-vacancy recombination, and
488 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
490 journal = "Phys. Rev. B",
493 pages = "14279--14289",
497 doi = "10.1103/PhysRevB.55.14279",
498 publisher = "American Physical Society",
499 notes = "si self interstitial, diffusion, tbmd",
503 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
506 title = "A kinetic Monte--Carlo study of the effective
507 diffusivity of the silicon self-interstitial in the
508 presence of carbon and boron",
511 journal = "J. Appl. Phys.",
514 pages = "1963--1967",
515 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
516 CARBON ADDITIONS; BORON ADDITIONS; elemental
517 semiconductors; self-diffusion",
518 URL = "http://link.aip.org/link/?JAP/84/1963/1",
519 doi = "10.1063/1.368328",
520 notes = "kinetic monte carlo of si self interstitial
525 title = "Barrier to Migration of the Silicon
527 author = "Y. Bar-Yam and J. D. Joannopoulos",
528 journal = "Phys. Rev. Lett.",
531 pages = "1129--1132",
535 doi = "10.1103/PhysRevLett.52.1129",
536 publisher = "American Physical Society",
537 notes = "si self-interstitial migration barrier",
540 @Article{bar-yam84_2,
541 title = "Electronic structure and total-energy migration
542 barriers of silicon self-interstitials",
543 author = "Y. Bar-Yam and J. D. Joannopoulos",
544 journal = "Phys. Rev. B",
547 pages = "1844--1852",
551 doi = "10.1103/PhysRevB.30.1844",
552 publisher = "American Physical Society",
556 title = "First-principles calculations of self-diffusion
557 constants in silicon",
558 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
559 and D. B. Laks and W. Andreoni and S. T. Pantelides",
560 journal = "Phys. Rev. Lett.",
563 pages = "2435--2438",
567 doi = "10.1103/PhysRevLett.70.2435",
568 publisher = "American Physical Society",
569 notes = "si self int diffusion by ab initio md, formation
570 entropy calculations",
574 title = "Defect migration in crystalline silicon",
575 author = "Lindsey J. Munro and David J. Wales",
576 journal = "Phys. Rev. B",
579 pages = "3969--3980",
583 doi = "10.1103/PhysRevB.59.3969",
584 publisher = "American Physical Society",
585 notes = "eigenvector following method, vacancy and interstiial
586 defect migration mechanisms",
590 title = "Tight-binding theory of native point defects in
592 author = "L. Colombo",
593 journal = "Annu. Rev. Mater. Res.",
598 doi = "10.1146/annurev.matsci.32.111601.103036",
599 publisher = "Annual Reviews",
600 notes = "si self interstitial, tbmd, virial stress",
603 @Article{al-mushadani03,
604 title = "Free-energy calculations of intrinsic point defects in
606 author = "O. K. Al-Mushadani and R. J. Needs",
607 journal = "Phys. Rev. B",
614 doi = "10.1103/PhysRevB.68.235205",
615 publisher = "American Physical Society",
616 notes = "formation energies of intrinisc point defects in
617 silicon, si self interstitials, free energy",
621 title = "Electronic surface error in the Si interstitial
623 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
625 journal = "Phys. Rev. B",
632 doi = "10.1103/PhysRevB.77.155211",
633 publisher = "American Physical Society",
634 notes = "si self interstitial formation energies by dft",
637 @Article{goedecker02,
638 title = "A Fourfold Coordinated Point Defect in Silicon",
639 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
640 journal = "Phys. Rev. Lett.",
647 doi = "10.1103/PhysRevLett.88.235501",
648 publisher = "American Physical Society",
649 notes = "first time ffcd, fourfold coordinated point defect in
654 title = "Ab initio molecular dynamics simulation of
655 self-interstitial diffusion in silicon",
656 author = "Beat Sahli and Wolfgang Fichtner",
657 journal = "Phys. Rev. B",
664 doi = "10.1103/PhysRevB.72.245210",
665 publisher = "American Physical Society",
666 notes = "si self int, diffusion, barrier height, voronoi
671 title = "Ab initio calculations of the interaction between
672 native point defects in silicon",
673 journal = "Mater. Sci. Eng., B",
678 note = "EMRS 2005, Symposium D - Materials Science and Device
679 Issues for Future Technologies",
681 doi = "DOI: 10.1016/j.mseb.2005.08.072",
682 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
683 author = "G. Hobler and G. Kresse",
684 notes = "vasp intrinsic si defect interaction study, capture
689 title = "Ab initio study of self-diffusion in silicon over a
690 wide temperature range: Point defect states and
691 migration mechanisms",
692 author = "Shangyi Ma and Shaoqing Wang",
693 journal = "Phys. Rev. B",
700 doi = "10.1103/PhysRevB.81.193203",
701 publisher = "American Physical Society",
702 notes = "si self interstitial diffusion + refs",
706 title = "Atomistic simulations on the thermal stability of the
707 antisite pair in 3{C}- and 4{H}-Si{C}",
708 author = "M. Posselt and F. Gao and W. J. Weber",
709 journal = "Phys. Rev. B",
716 doi = "10.1103/PhysRevB.73.125206",
717 publisher = "American Physical Society",
721 title = "Correlation between self-diffusion in Si and the
722 migration mechanisms of vacancies and
723 self-interstitials: An atomistic study",
724 author = "M. Posselt and F. Gao and H. Bracht",
725 journal = "Phys. Rev. B",
732 doi = "10.1103/PhysRevB.78.035208",
733 publisher = "American Physical Society",
734 notes = "si self-interstitial and vacancy diffusion, stillinger
739 title = "Ab initio and empirical-potential studies of defect
740 properties in $3{C}-Si{C}$",
741 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
743 journal = "Phys. Rev. B",
750 doi = "10.1103/PhysRevB.64.245208",
751 publisher = "American Physical Society",
752 notes = "defects in 3c-sic",
756 title = "Empirical potential approach for defect properties in
758 journal = "Nucl. Instrum. Methods Phys. Res. B",
765 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
766 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
767 author = "Fei Gao and William J. Weber",
768 keywords = "Empirical potential",
769 keywords = "Defect properties",
770 keywords = "Silicon carbide",
771 keywords = "Computer simulation",
772 notes = "sic potential, brenner type, like erhart/albe",
776 title = "Atomistic study of intrinsic defect migration in
778 author = "Fei Gao and William J. Weber and M. Posselt and V.
780 journal = "Phys. Rev. B",
787 doi = "10.1103/PhysRevB.69.245205",
788 publisher = "American Physical Society",
789 notes = "defect migration in sic",
793 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
796 title = "Ab Initio atomic simulations of antisite pair recovery
797 in cubic silicon carbide",
800 journal = "Appl. Phys. Lett.",
806 keywords = "ab initio calculations; silicon compounds; antisite
807 defects; wide band gap semiconductors; molecular
808 dynamics method; density functional theory;
809 electron-hole recombination; photoluminescence;
810 impurities; diffusion",
811 URL = "http://link.aip.org/link/?APL/90/221915/1",
812 doi = "10.1063/1.2743751",
815 @Article{mattoni2002,
816 title = "Self-interstitial trapping by carbon complexes in
817 crystalline silicon",
818 author = "A. Mattoni and F. Bernardini and L. Colombo",
819 journal = "Phys. Rev. B",
826 doi = "10.1103/PhysRevB.66.195214",
827 publisher = "American Physical Society",
828 notes = "c in c-si, diffusion, interstitial configuration +
829 links, interaction of carbon and silicon interstitials,
830 tersoff suitability",
834 title = "Calculations of Silicon Self-Interstitial Defects",
835 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
837 journal = "Phys. Rev. Lett.",
840 pages = "2351--2354",
844 doi = "10.1103/PhysRevLett.83.2351",
845 publisher = "American Physical Society",
846 notes = "nice images of the defects, si defect overview +
851 title = "Identification of the migration path of interstitial
853 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
854 journal = "Phys. Rev. B",
857 pages = "7439--7442",
861 doi = "10.1103/PhysRevB.50.7439",
862 publisher = "American Physical Society",
863 notes = "carbon interstitial migration path shown, 001 c-si
868 title = "Theory of carbon-carbon pairs in silicon",
869 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
870 journal = "Phys. Rev. B",
873 pages = "9845--9850",
877 doi = "10.1103/PhysRevB.58.9845",
878 publisher = "American Physical Society",
879 notes = "c_i c_s pair configuration, theoretical results",
883 title = "Bistable interstitial-carbon--substitutional-carbon
885 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
887 journal = "Phys. Rev. B",
890 pages = "5765--5783",
894 doi = "10.1103/PhysRevB.42.5765",
895 publisher = "American Physical Society",
896 notes = "c_i c_s pair configuration, experimental results",
900 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
901 Shifeng Lu and Xiang-Yang Liu",
903 title = "Ab initio modeling and experimental study of {C}--{B}
907 journal = "Appl. Phys. Lett.",
911 keywords = "silicon; boron; carbon; elemental semiconductors;
912 impurity-defect interactions; ab initio calculations;
913 secondary ion mass spectra; diffusion; interstitials",
914 URL = "http://link.aip.org/link/?APL/80/52/1",
915 doi = "10.1063/1.1430505",
916 notes = "c-c 100 split, lower as a and b states of capaz",
920 title = "Ab initio investigation of carbon-related defects in
922 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
924 journal = "Phys. Rev. B",
927 pages = "12554--12557",
931 doi = "10.1103/PhysRevB.47.12554",
932 publisher = "American Physical Society",
933 notes = "c interstitials in crystalline silicon",
937 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
939 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
940 Sokrates T. Pantelides",
941 journal = "Phys. Rev. Lett.",
944 pages = "1814--1817",
948 doi = "10.1103/PhysRevLett.52.1814",
949 publisher = "American Physical Society",
950 notes = "microscopic theory diffusion silicon dft migration
955 title = "Unified Approach for Molecular Dynamics and
956 Density-Functional Theory",
957 author = "R. Car and M. Parrinello",
958 journal = "Phys. Rev. Lett.",
961 pages = "2471--2474",
965 doi = "10.1103/PhysRevLett.55.2471",
966 publisher = "American Physical Society",
967 notes = "car parrinello method, dft and md",
971 title = "Short-range order, bulk moduli, and physical trends in
972 c-$Si1-x$$Cx$ alloys",
973 author = "P. C. Kelires",
974 journal = "Phys. Rev. B",
977 pages = "8784--8787",
981 doi = "10.1103/PhysRevB.55.8784",
982 publisher = "American Physical Society",
983 notes = "c strained si, montecarlo md, bulk moduli, next
988 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
989 Application to the $Si1-x-yGexCy$ System",
990 author = "P. C. Kelires",
991 journal = "Phys. Rev. Lett.",
994 pages = "1114--1117",
998 doi = "10.1103/PhysRevLett.75.1114",
999 publisher = "American Physical Society",
1000 notes = "mc md, strain compensation in si ge by c insertion",
1004 title = "Low temperature electron irradiation of silicon
1006 journal = "Solid State Communications",
1013 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1014 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1015 author = "A. R. Bean and R. C. Newman",
1019 author = "F. Durand and J. Duby",
1020 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1021 title = "Carbon solubility in solid and liquid silicon—{A}
1022 review with reference to eutectic equilibrium",
1023 journal = "Journal of Phase Equilibria",
1024 publisher = "Springer New York",
1026 keyword = "Chemistry and Materials Science",
1030 URL = "http://dx.doi.org/10.1361/105497199770335956",
1031 note = "10.1361/105497199770335956",
1033 notes = "better c solubility limit in silicon",
1037 title = "{EPR} Observation of the Isolated Interstitial Carbon
1039 author = "G. D. Watkins and K. L. Brower",
1040 journal = "Phys. Rev. Lett.",
1043 pages = "1329--1332",
1047 doi = "10.1103/PhysRevLett.36.1329",
1048 publisher = "American Physical Society",
1049 notes = "epr observations of 100 interstitial carbon atom in
1054 title = "{EPR} identification of the single-acceptor state of
1055 interstitial carbon in silicon",
1056 author = "L. W. Song and G. D. Watkins",
1057 journal = "Phys. Rev. B",
1060 pages = "5759--5764",
1064 doi = "10.1103/PhysRevB.42.5759",
1065 publisher = "American Physical Society",
1066 notes = "carbon diffusion in silicon",
1070 author = "A K Tipping and R C Newman",
1071 title = "The diffusion coefficient of interstitial carbon in
1073 journal = "Semicond. Sci. Technol.",
1077 URL = "http://stacks.iop.org/0268-1242/2/315",
1079 notes = "diffusion coefficient of carbon interstitials in
1084 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1087 title = "Annealing behavior of Me{V} implanted carbon in
1091 journal = "Journal of Applied Physics",
1094 pages = "3815--3820",
1095 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1096 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1098 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1099 doi = "10.1063/1.354474",
1100 notes = "c at interstitial location for rt implantation in si",
1104 title = "Carbon incorporation into Si at high concentrations by
1105 ion implantation and solid phase epitaxy",
1106 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1107 Picraux and J. K. Watanabe and J. W. Mayer",
1108 journal = "J. Appl. Phys.",
1113 doi = "10.1063/1.360806",
1114 notes = "strained silicon, carbon supersaturation",
1117 @Article{laveant2002,
1118 title = "Epitaxy of carbon-rich silicon with {MBE}",
1119 journal = "Mater. Sci. Eng., B",
1125 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1126 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1127 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1129 notes = "low c in si, tensile stress to compensate compressive
1130 stress, avoid sic precipitation",
1134 title = "The formation of swirl defects in silicon by
1135 agglomeration of self-interstitials",
1136 journal = "Journal of Crystal Growth",
1143 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1144 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1145 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1146 notes = "b-swirl: si + c interstitial agglomerates, c-si
1151 title = "Microdefects in silicon and their relation to point
1153 journal = "Journal of Crystal Growth",
1160 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1161 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1162 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1163 notes = "swirl review",
1167 author = "P. Werner and S. Eichler and G. Mariani and R.
1168 K{\"{o}}gler and W. Skorupa",
1169 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1170 silicon by transmission electron microscopy",
1173 journal = "Appl. Phys. Lett.",
1177 keywords = "silicon; ion implantation; carbon; crystal defects;
1178 transmission electron microscopy; annealing; positron
1179 annihilation; secondary ion mass spectroscopy; buried
1180 layers; precipitation",
1181 URL = "http://link.aip.org/link/?APL/70/252/1",
1182 doi = "10.1063/1.118381",
1183 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1187 @InProceedings{werner96,
1188 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1190 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1191 International Conference on",
1192 title = "{TEM} investigation of {C}-Si defects in carbon
1199 doi = "10.1109/IIT.1996.586497",
1201 notes = "c-si agglomerates dumbbells",
1205 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1208 title = "Carbon diffusion in silicon",
1211 journal = "Appl. Phys. Lett.",
1214 pages = "2465--2467",
1215 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1216 secondary ion mass spectra; semiconductor epitaxial
1217 layers; annealing; impurity-defect interactions;
1218 impurity distribution",
1219 URL = "http://link.aip.org/link/?APL/73/2465/1",
1220 doi = "10.1063/1.122483",
1221 notes = "c diffusion in si, kick out mechnism",
1225 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1227 title = "Self-interstitial enhanced carbon diffusion in
1231 journal = "Applied Physics Letters",
1235 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1236 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1237 TEMPERATURE; IMPURITIES",
1238 URL = "http://link.aip.org/link/?APL/45/268/1",
1239 doi = "10.1063/1.95167",
1240 notes = "c diffusion due to si self-interstitials",
1244 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1247 title = "Characterization of SiGe/Si heterostructures formed by
1248 Ge[sup + ] and {C}[sup + ] implantation",
1251 journal = "Applied Physics Letters",
1254 pages = "2345--2347",
1255 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1256 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1257 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1258 EPITAXY; CARBON IONS; GERMANIUM IONS",
1259 URL = "http://link.aip.org/link/?APL/57/2345/1",
1260 doi = "10.1063/1.103888",
1264 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1265 Doyle and S. T. Picraux and J. W. Mayer",
1267 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1270 journal = "Applied Physics Letters",
1273 pages = "2786--2788",
1274 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1275 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1276 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1277 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1278 EPITAXY; AMORPHIZATION",
1279 URL = "http://link.aip.org/link/?APL/63/2786/1",
1280 doi = "10.1063/1.110334",
1284 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1285 Legoues and J. Angilello and F. Cardone",
1287 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1288 strained layer superlattices",
1291 journal = "Applied Physics Letters",
1294 pages = "2758--2760",
1295 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1296 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1297 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1298 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1299 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1300 URL = "http://link.aip.org/link/?APL/60/2758/1",
1301 doi = "10.1063/1.106868",
1305 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1306 Picraux and J. K. Watanabe and J. W. Mayer",
1308 title = "Precipitation and relaxation in strained Si[sub 1 -
1309 y]{C}[sub y]/Si heterostructures",
1312 journal = "J. Appl. Phys.",
1315 pages = "3656--3668",
1316 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1317 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1318 doi = "10.1063/1.357429",
1319 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1320 precipitation by substitutional carbon, coherent prec,
1321 coherent to incoherent transition strain vs interface
1326 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1329 title = "Investigation of the high temperature behavior of
1330 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1333 journal = "J. Appl. Phys.",
1336 pages = "1934--1937",
1337 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1338 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1339 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1340 TEMPERATURE RANGE 04001000 K",
1341 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1342 doi = "10.1063/1.358826",
1346 title = "Prospects for device implementation of wide band gap
1348 author = "J. H. Edgar",
1349 journal = "J. Mater. Res.",
1354 doi = "10.1557/JMR.1992.0235",
1355 notes = "properties wide band gap semiconductor, sic
1359 @Article{zirkelbach2007,
1360 title = "Monte Carlo simulation study of a selforganisation
1361 process leading to ordered precipitate structures",
1362 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1364 journal = "Nucl. Instr. and Meth. B",
1371 doi = "doi:10.1016/j.nimb.2006.12.118",
1372 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1376 @Article{zirkelbach2006,
1377 title = "Monte-Carlo simulation study of the self-organization
1378 of nanometric amorphous precipitates in regular arrays
1379 during ion irradiation",
1380 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1382 journal = "Nucl. Instr. and Meth. B",
1389 doi = "doi:10.1016/j.nimb.2005.08.162",
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1394 @Article{zirkelbach2005,
1395 title = "Modelling of a selforganization process leading to
1396 periodic arrays of nanometric amorphous precipitates by
1398 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1400 journal = "Comp. Mater. Sci.",
1407 doi = "doi:10.1016/j.commatsci.2004.12.016",
1408 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1412 @Article{zirkelbach09,
1413 title = "Molecular dynamics simulation of defect formation and
1414 precipitation in heavily carbon doped silicon",
1415 journal = "Mater. Sci. Eng., B",
1420 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1421 Silicon Materials Research for Electronic and
1422 Photovoltaic Applications",
1424 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1425 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
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1428 keywords = "Silicon",
1429 keywords = "Carbon",
1430 keywords = "Silicon carbide",
1431 keywords = "Nucleation",
1432 keywords = "Defect formation",
1433 keywords = "Molecular dynamics simulations",
1436 @Article{zirkelbach10,
1437 title = "Defects in carbon implanted silicon calculated by
1438 classical potentials and first-principles methods",
1439 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1440 K. N. Lindner and W. G. Schmidt and E. Rauls",
1441 journal = "Phys. Rev. B",
1448 doi = "10.1103/PhysRevB.82.094110",
1449 publisher = "American Physical Society",
1452 @Article{zirkelbach11a,
1453 title = "First principles study of defects in carbon implanted
1455 journal = "to be published",
1460 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1461 and W. G. Schmidt and E. Rauls",
1464 @Article{zirkelbach11b,
1466 journal = "to be published",
1471 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1472 K. N. Lindner and W. G. Schmidt and E. Rauls",
1476 author = "J. K. N. Lindner and A. Frohnwieser and B.
1477 Rauschenbach and B. Stritzker",
1478 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1480 journal = "MRS Online Proceedings Library",
1485 doi = "10.1557/PROC-354-171",
1486 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1487 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1488 notes = "first time ibs at moderate temperatures",
1492 title = "Formation of buried epitaxial silicon carbide layers
1493 in silicon by ion beam synthesis",
1494 journal = "Materials Chemistry and Physics",
1501 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1502 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1503 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1504 Götz and A. Frohnwieser and B. Rauschenbach and B.
1506 notes = "dose window",
1509 @Article{calcagno96,
1510 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1512 journal = "Nuclear Instruments and Methods in Physics Research
1513 Section B: Beam Interactions with Materials and Atoms",
1518 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1519 New Trends in Ion Beam Processing of Materials",
1521 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1522 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1523 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1524 Grimaldi and P. Musumeci",
1525 notes = "dose window, graphitic bonds",
1529 title = "Mechanisms of Si{C} Formation in the Ion Beam
1530 Synthesis of 3{C}-Si{C} Layers in Silicon",
1531 journal = "Materials Science Forum",
1536 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1537 URL = "http://www.scientific.net/MSF.264-268.215",
1538 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1539 notes = "intermediate temperature for sharp interface + good
1544 title = "Controlling the density distribution of Si{C}
1545 nanocrystals for the ion beam synthesis of buried Si{C}
1547 journal = "Nucl. Instrum. Methods Phys. Res. B",
1554 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1555 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1556 author = "J. K. N. Lindner and B. Stritzker",
1557 notes = "two-step implantation process",
1560 @Article{lindner99_2,
1561 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1563 journal = "Nucl. Instrum. Methods Phys. Res. B",
1569 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1570 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1571 author = "J. K. N. Lindner and B. Stritzker",
1572 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1576 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1577 Basic physical processes",
1578 journal = "Nucl. Instrum. Methods Phys. Res. B",
1585 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1586 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1587 author = "J{\"{o}}rg K. N. Lindner",
1591 title = "High-dose carbon implantations into silicon:
1592 fundamental studies for new technological tricks",
1593 author = "J. K. N. Lindner",
1594 journal = "Appl. Phys. A",
1598 doi = "10.1007/s00339-002-2062-8",
1599 notes = "ibs, burried sic layers",
1603 title = "On the balance between ion beam induced nanoparticle
1604 formation and displacive precipitate resolution in the
1606 journal = "Mater. Sci. Eng., C",
1611 note = "Current Trends in Nanoscience - from Materials to
1614 doi = "DOI: 10.1016/j.msec.2005.09.099",
1615 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1616 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1618 notes = "c int diffusion barrier",
1622 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1623 application in buffer layer for Ga{N} epitaxial
1625 journal = "Applied Surface Science",
1630 note = "APHYS'03 Special Issue",
1632 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1633 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1634 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1635 and S. Nishio and K. Yasuda and Y. Ishigami",
1636 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1639 @Article{yamamoto04,
1640 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1641 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1642 implantation into Si(1 1 1) substrate",
1643 journal = "Journal of Crystal Growth",
1648 note = "Proceedings of the 11th Biennial (US) Workshop on
1649 Organometallic Vapor Phase Epitaxy (OMVPE)",
1651 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1652 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1653 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1654 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1655 notes = "gan on 3c-sic",
1659 title = "Substrates for gallium nitride epitaxy",
1660 journal = "Materials Science and Engineering: R: Reports",
1667 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1668 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1669 author = "L. Liu and J. H. Edgar",
1670 notes = "gan substrates",
1673 @Article{takeuchi91,
1674 title = "Growth of single crystalline Ga{N} film on Si
1675 substrate using 3{C}-Si{C} as an intermediate layer",
1676 journal = "Journal of Crystal Growth",
1683 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1684 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1685 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1686 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1687 notes = "gan on 3c-sic (first time?)",
1691 author = "B. J. Alder and T. E. Wainwright",
1692 title = "Phase Transition for a Hard Sphere System",
1695 journal = "J. Chem. Phys.",
1698 pages = "1208--1209",
1699 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1700 doi = "10.1063/1.1743957",
1704 author = "B. J. Alder and T. E. Wainwright",
1705 title = "Studies in Molecular Dynamics. {I}. General Method",
1708 journal = "J. Chem. Phys.",
1712 URL = "http://link.aip.org/link/?JCP/31/459/1",
1713 doi = "10.1063/1.1730376",
1716 @Article{horsfield96,
1717 title = "Bond-order potentials: Theory and implementation",
1718 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1719 D. G. Pettifor and M. Aoki",
1720 journal = "Phys. Rev. B",
1723 pages = "12694--12712",
1727 doi = "10.1103/PhysRevB.53.12694",
1728 publisher = "American Physical Society",
1732 title = "Empirical chemical pseudopotential theory of molecular
1733 and metallic bonding",
1734 author = "G. C. Abell",
1735 journal = "Phys. Rev. B",
1738 pages = "6184--6196",
1742 doi = "10.1103/PhysRevB.31.6184",
1743 publisher = "American Physical Society",
1746 @Article{tersoff_si1,
1747 title = "New empirical model for the structural properties of
1749 author = "J. Tersoff",
1750 journal = "Phys. Rev. Lett.",
1757 doi = "10.1103/PhysRevLett.56.632",
1758 publisher = "American Physical Society",
1762 title = "Development of a many-body Tersoff-type potential for
1764 author = "Brian W. Dodson",
1765 journal = "Phys. Rev. B",
1768 pages = "2795--2798",
1772 doi = "10.1103/PhysRevB.35.2795",
1773 publisher = "American Physical Society",
1776 @Article{tersoff_si2,
1777 title = "New empirical approach for the structure and energy of
1779 author = "J. Tersoff",
1780 journal = "Phys. Rev. B",
1783 pages = "6991--7000",
1787 doi = "10.1103/PhysRevB.37.6991",
1788 publisher = "American Physical Society",
1791 @Article{tersoff_si3,
1792 title = "Empirical interatomic potential for silicon with
1793 improved elastic properties",
1794 author = "J. Tersoff",
1795 journal = "Phys. Rev. B",
1798 pages = "9902--9905",
1802 doi = "10.1103/PhysRevB.38.9902",
1803 publisher = "American Physical Society",
1807 title = "Empirical Interatomic Potential for Carbon, with
1808 Applications to Amorphous Carbon",
1809 author = "J. Tersoff",
1810 journal = "Phys. Rev. Lett.",
1813 pages = "2879--2882",
1817 doi = "10.1103/PhysRevLett.61.2879",
1818 publisher = "American Physical Society",
1822 title = "Modeling solid-state chemistry: Interatomic potentials
1823 for multicomponent systems",
1824 author = "J. Tersoff",
1825 journal = "Phys. Rev. B",
1828 pages = "5566--5568",
1832 doi = "10.1103/PhysRevB.39.5566",
1833 publisher = "American Physical Society",
1837 title = "Carbon defects and defect reactions in silicon",
1838 author = "J. Tersoff",
1839 journal = "Phys. Rev. Lett.",
1842 pages = "1757--1760",
1846 doi = "10.1103/PhysRevLett.64.1757",
1847 publisher = "American Physical Society",
1851 title = "Point defects and dopant diffusion in silicon",
1852 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1853 journal = "Rev. Mod. Phys.",
1860 doi = "10.1103/RevModPhys.61.289",
1861 publisher = "American Physical Society",
1865 title = "Silicon carbide: synthesis and processing",
1866 journal = "Nucl. Instrum. Methods Phys. Res. B",
1871 note = "Radiation Effects in Insulators",
1873 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1874 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1875 author = "W. Wesch",
1879 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1880 Palmour and J. A. Edmond",
1881 journal = "Proceedings of the IEEE",
1882 title = "Thin film deposition and microelectronic and
1883 optoelectronic device fabrication and characterization
1884 in monocrystalline alpha and beta silicon carbide",
1890 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1891 diode;SiC;dry etching;electrical
1892 contacts;etching;impurity incorporation;optoelectronic
1893 device fabrication;solid-state devices;surface
1894 chemistry;Schottky effect;Schottky gate field effect
1895 transistors;Schottky-barrier
1896 diodes;etching;heterojunction bipolar
1897 transistors;insulated gate field effect
1898 transistors;light emitting diodes;semiconductor
1899 materials;semiconductor thin films;silicon compounds;",
1900 doi = "10.1109/5.90132",
1902 notes = "sic growth methods",
1906 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1907 Lin and B. Sverdlov and M. Burns",
1909 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1910 ZnSe-based semiconductor device technologies",
1913 journal = "J. Appl. Phys.",
1916 pages = "1363--1398",
1917 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1918 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1919 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1921 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1922 doi = "10.1063/1.358463",
1923 notes = "sic intro, properties",
1927 author = "Noch Unbekannt",
1928 title = "How to find references",
1929 journal = "Journal of Applied References",
1936 title = "Atomistic simulation of thermomechanical properties of
1938 author = "Meijie Tang and Sidney Yip",
1939 journal = "Phys. Rev. B",
1942 pages = "15150--15159",
1945 doi = "10.1103/PhysRevB.52.15150",
1946 notes = "modified tersoff, scale cutoff with volume, promising
1947 tersoff reparametrization",
1948 publisher = "American Physical Society",
1952 title = "Silicon carbide as a new {MEMS} technology",
1953 journal = "Sensors and Actuators A: Physical",
1959 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1960 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1961 author = "Pasqualina M. Sarro",
1963 keywords = "Silicon carbide",
1964 keywords = "Micromachining",
1965 keywords = "Mechanical stress",
1969 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1970 semiconductor for high-temperature applications: {A}
1972 journal = "Solid-State Electronics",
1975 pages = "1409--1422",
1978 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1979 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1980 author = "J. B. Casady and R. W. Johnson",
1981 notes = "sic intro",
1984 @Article{giancarli98,
1985 title = "Design requirements for Si{C}/Si{C} composites
1986 structural material in fusion power reactor blankets",
1987 journal = "Fusion Engineering and Design",
1993 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1994 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1995 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1996 Marois and N. B. Morley and J. F. Salavy",
2000 title = "Electrical and optical characterization of Si{C}",
2001 journal = "Physica B: Condensed Matter",
2007 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2008 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2009 author = "G. Pensl and W. J. Choyke",
2013 title = "Investigation of growth processes of ingots of silicon
2014 carbide single crystals",
2015 journal = "J. Cryst. Growth",
2020 notes = "modified lely process",
2022 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2023 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2024 author = "Yu. M. Tairov and V. F. Tsvetkov",
2028 title = "General principles of growing large-size single
2029 crystals of various silicon carbide polytypes",
2030 journal = "Journal of Crystal Growth",
2037 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2038 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2039 author = "Yu.M. Tairov and V. F. Tsvetkov",
2043 title = "Si{C} boule growth by sublimation vapor transport",
2044 journal = "Journal of Crystal Growth",
2051 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2052 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2053 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2054 R. H. Hopkins and W. J. Choyke",
2058 title = "Growth of large Si{C} single crystals",
2059 journal = "Journal of Crystal Growth",
2066 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2067 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2068 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2069 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2074 title = "Control of polytype formation by surface energy
2075 effects during the growth of Si{C} monocrystals by the
2076 sublimation method",
2077 journal = "Journal of Crystal Growth",
2084 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2085 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2086 author = "R. A. Stein and P. Lanig",
2087 notes = "6h and 4h, sublimation technique",
2091 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2094 title = "Production of large-area single-crystal wafers of
2095 cubic Si{C} for semiconductor devices",
2098 journal = "Appl. Phys. Lett.",
2102 keywords = "silicon carbides; layers; chemical vapor deposition;
2104 URL = "http://link.aip.org/link/?APL/42/460/1",
2105 doi = "10.1063/1.93970",
2106 notes = "cvd of 3c-sic on si, sic buffer layer",
2110 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2111 and Hiroyuki Matsunami",
2113 title = "Epitaxial growth and electric characteristics of cubic
2117 journal = "J. Appl. Phys.",
2120 pages = "4889--4893",
2121 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2122 doi = "10.1063/1.338355",
2123 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2128 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2130 title = "Growth and Characterization of Cubic Si{C}
2131 Single-Crystal Films on Si",
2134 journal = "Journal of The Electrochemical Society",
2137 pages = "1558--1565",
2138 keywords = "semiconductor materials; silicon compounds; carbon
2139 compounds; crystal morphology; electron mobility",
2140 URL = "http://link.aip.org/link/?JES/134/1558/1",
2141 doi = "10.1149/1.2100708",
2142 notes = "blue light emitting diodes (led)",
2145 @Article{powell87_2,
2146 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2147 C. M. Chorey and T. T. Cheng and P. Pirouz",
2149 title = "Improved beta-Si{C} heteroepitaxial films using
2150 off-axis Si substrates",
2153 journal = "Applied Physics Letters",
2157 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2158 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2159 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2160 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2161 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2162 URL = "http://link.aip.org/link/?APL/51/823/1",
2163 doi = "10.1063/1.98824",
2164 notes = "improved sic on off-axis si substrates, reduced apbs",
2168 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2169 journal = "Journal of Crystal Growth",
2176 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2177 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2178 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2180 notes = "step-controlled epitaxy model",
2184 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2185 and Hiroyuki Matsunami",
2186 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2190 journal = "J. Appl. Phys.",
2194 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2195 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2197 URL = "http://link.aip.org/link/?JAP/73/726/1",
2198 doi = "10.1063/1.353329",
2199 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2202 @Article{powell90_2,
2203 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2204 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2205 Yoganathan and J. Yang and P. Pirouz",
2207 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2208 vicinal (0001) 6{H}-Si{C} wafers",
2211 journal = "Applied Physics Letters",
2214 pages = "1442--1444",
2215 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2216 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2217 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2218 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2219 URL = "http://link.aip.org/link/?APL/56/1442/1",
2220 doi = "10.1063/1.102492",
2221 notes = "cvd of 6h-sic on 6h-sic",
2225 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2227 title = "Chemical vapor deposition and characterization of
2228 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2232 journal = "Journal of Applied Physics",
2235 pages = "2672--2679",
2236 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2237 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2238 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2239 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2240 PHASE EPITAXY; CRYSTAL ORIENTATION",
2241 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2242 doi = "10.1063/1.341608",
2246 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2247 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2248 Yoganathan and J. Yang and P. Pirouz",
2250 title = "Growth of improved quality 3{C}-Si{C} films on
2251 6{H}-Si{C} substrates",
2254 journal = "Appl. Phys. Lett.",
2257 pages = "1353--1355",
2258 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2259 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2260 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2262 URL = "http://link.aip.org/link/?APL/56/1353/1",
2263 doi = "10.1063/1.102512",
2264 notes = "cvd of 3c-sic on 6h-sic",
2268 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2269 Rozgonyi and K. L. More",
2271 title = "An examination of double positioning boundaries and
2272 interface misfit in beta-Si{C} films on alpha-Si{C}
2276 journal = "Journal of Applied Physics",
2279 pages = "2645--2650",
2280 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2281 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2282 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2283 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2284 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2285 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2286 doi = "10.1063/1.341004",
2290 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2291 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2292 and W. J. Choyke and L. Clemen and M. Yoganathan",
2294 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2295 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2298 journal = "Applied Physics Letters",
2302 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2303 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2304 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2305 URL = "http://link.aip.org/link/?APL/59/333/1",
2306 doi = "10.1063/1.105587",
2310 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2311 Thokala and M. J. Loboda",
2313 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2314 films on 6{H}-Si{C} by chemical vapor deposition from
2318 journal = "J. Appl. Phys.",
2321 pages = "1271--1273",
2322 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2323 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2325 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2326 doi = "10.1063/1.360368",
2327 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2331 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2332 properties of its p-n junction",
2333 journal = "Journal of Crystal Growth",
2340 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2341 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2342 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2344 notes = "first time ssmbe of 3c-sic on 6h-sic",
2348 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2349 [alpha]-Si{C}(0001) at low temperatures by solid-source
2350 molecular beam epitaxy",
2351 journal = "J. Cryst. Growth",
2357 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2358 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2359 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2360 Schr{\"{o}}ter and W. Richter",
2361 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2364 @Article{fissel95_apl,
2365 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2367 title = "Low-temperature growth of Si{C} thin films on Si and
2368 6{H}--Si{C} by solid-source molecular beam epitaxy",
2371 journal = "Appl. Phys. Lett.",
2374 pages = "3182--3184",
2375 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2377 URL = "http://link.aip.org/link/?APL/66/3182/1",
2378 doi = "10.1063/1.113716",
2379 notes = "mbe 3c-sic on si and 6h-sic",
2383 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2384 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2386 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2387 migration enhanced epitaxy controlled to an atomic
2388 level using surface superstructures",
2391 journal = "Applied Physics Letters",
2394 pages = "1204--1206",
2395 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2396 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2398 URL = "http://link.aip.org/link/?APL/68/1204/1",
2399 doi = "10.1063/1.115969",
2400 notes = "ss mbe sic, superstructure, reconstruction",
2404 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2405 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2406 C. M. Bertoni and A. Catellani",
2407 journal = "Phys. Rev. Lett.",
2414 doi = "10.1103/PhysRevLett.91.136101",
2415 publisher = "American Physical Society",
2416 notes = "dft calculations mbe sic growth",
2420 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2422 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2426 journal = "Appl. Phys. Lett.",
2430 URL = "http://link.aip.org/link/?APL/18/509/1",
2431 doi = "10.1063/1.1653516",
2432 notes = "first time sic by ibs, follow cites for precipitation
2437 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2438 and E. V. Lubopytova",
2439 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2440 by ion implantation",
2441 publisher = "Taylor \& Francis",
2443 journal = "Radiation Effects",
2447 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2448 notes = "3c-sic for different temperatures, amorphous, poly,
2449 single crystalline",
2452 @Article{akimchenko80,
2453 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2454 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2455 title = "Structure and optical properties of silicon implanted
2456 by high doses of 70 and 310 ke{V} carbon ions",
2457 publisher = "Taylor \& Francis",
2459 journal = "Radiation Effects",
2463 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2464 notes = "3c-sic nucleation by thermal spikes",
2468 title = "Structure and annealing properties of silicon carbide
2469 thin layers formed by implantation of carbon ions in
2471 journal = "Thin Solid Films",
2478 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2479 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2480 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2485 title = "Characteristics of the synthesis of [beta]-Si{C} by
2486 the implantation of carbon ions into silicon",
2487 journal = "Thin Solid Films",
2494 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2495 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2496 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2501 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2502 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2503 Chater and J. A. Iulner and J. Davis",
2504 title = "Formation mechanisms and structures of insulating
2505 compounds formed in silicon by ion beam synthesis",
2506 publisher = "Taylor \& Francis",
2508 journal = "Radiation Effects",
2512 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2513 notes = "ibs, comparison with sio and sin, higher temp or time,
2514 no c redistribution",
2518 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2519 J. Davis and G. E. Celler",
2521 title = "Formation of buried layers of beta-Si{C} using ion
2522 beam synthesis and incoherent lamp annealing",
2525 journal = "Appl. Phys. Lett.",
2528 pages = "2242--2244",
2529 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2530 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2531 URL = "http://link.aip.org/link/?APL/51/2242/1",
2532 doi = "10.1063/1.98953",
2533 notes = "nice tem images, sic by ibs",
2537 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2538 and M. Olivier and A. M. Papon and G. Rolland",
2540 title = "High-temperature ion beam synthesis of cubic Si{C}",
2543 journal = "Journal of Applied Physics",
2546 pages = "2908--2912",
2547 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2548 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2549 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2550 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2551 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2552 REACTIONS; MONOCRYSTALS",
2553 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2554 doi = "10.1063/1.346092",
2555 notes = "triple energy implantation to overcome high annealing
2560 author = "R. I. Scace and G. A. Slack",
2562 title = "Solubility of Carbon in Silicon and Germanium",
2565 journal = "J. Chem. Phys.",
2568 pages = "1551--1555",
2569 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2570 doi = "10.1063/1.1730236",
2571 notes = "solubility of c in c-si, si-c phase diagram",
2575 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2577 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2578 Laboratories Eindhoven Netherlands Eindhoven
2580 title = "Boron implantations in silicon: {A} comparison of
2581 charge carrier and boron concentration profiles",
2582 journal = "Applied Physics A: Materials Science \& Processing",
2583 publisher = "Springer Berlin / Heidelberg",
2585 keyword = "Physics and Astronomy",
2589 URL = "http://dx.doi.org/10.1007/BF00884267",
2590 note = "10.1007/BF00884267",
2592 notes = "first time ted (only for boron?)",
2596 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2599 title = "Rapid annealing and the anomalous diffusion of ion
2600 implanted boron into silicon",
2603 journal = "Applied Physics Letters",
2607 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2608 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2609 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2610 URL = "http://link.aip.org/link/?APL/50/416/1",
2611 doi = "10.1063/1.98160",
2612 notes = "ted of boron in si",
2616 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2619 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2620 time, and matrix dependence of atomic and electrical
2624 journal = "Journal of Applied Physics",
2627 pages = "6191--6198",
2628 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2629 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2630 CRYSTALS; AMORPHIZATION",
2631 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2632 doi = "10.1063/1.346910",
2633 notes = "ted of boron in si",
2637 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2638 F. W. Saris and W. Vandervorst",
2640 title = "Role of {C} and {B} clusters in transient diffusion of
2644 journal = "Appl. Phys. Lett.",
2647 pages = "1150--1152",
2648 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2649 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2651 URL = "http://link.aip.org/link/?APL/68/1150/1",
2652 doi = "10.1063/1.115706",
2653 notes = "suppression of transient enhanced diffusion (ted)",
2657 title = "Implantation and transient boron diffusion: the role
2658 of the silicon self-interstitial",
2659 journal = "Nucl. Instrum. Methods Phys. Res. B",
2664 note = "Selected Papers of the Tenth International Conference
2665 on Ion Implantation Technology (IIT '94)",
2667 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2668 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2669 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2674 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2675 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2676 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2679 title = "Physical mechanisms of transient enhanced dopant
2680 diffusion in ion-implanted silicon",
2683 journal = "J. Appl. Phys.",
2686 pages = "6031--6050",
2687 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2688 doi = "10.1063/1.364452",
2689 notes = "ted, transient enhanced diffusion, c silicon trap",
2693 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2695 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2696 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2699 journal = "Appl. Phys. Lett.",
2703 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2704 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2705 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2707 URL = "http://link.aip.org/link/?APL/64/324/1",
2708 doi = "10.1063/1.111195",
2709 notes = "beta sic nano crystals in si, mbe, annealing",
2713 author = "Richard A. Soref",
2715 title = "Optical band gap of the ternary semiconductor Si[sub 1
2716 - x - y]Ge[sub x]{C}[sub y]",
2719 journal = "J. Appl. Phys.",
2722 pages = "2470--2472",
2723 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2724 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2726 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2727 doi = "10.1063/1.349403",
2728 notes = "band gap of strained si by c",
2732 author = "E Kasper",
2733 title = "Superlattices of group {IV} elements, a new
2734 possibility to produce direct band gap material",
2735 journal = "Physica Scripta",
2738 URL = "http://stacks.iop.org/1402-4896/T35/232",
2740 notes = "superlattices, convert indirect band gap into a
2745 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2748 title = "Growth and strain compensation effects in the ternary
2749 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2752 journal = "Applied Physics Letters",
2755 pages = "3033--3035",
2756 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2757 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2758 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2759 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2761 URL = "http://link.aip.org/link/?APL/60/3033/1",
2762 doi = "10.1063/1.106774",
2766 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2769 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2773 journal = "J. Vac. Sci. Technol. B",
2776 pages = "1064--1068",
2777 location = "Ottawa (Canada)",
2778 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2779 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2780 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2781 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2782 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2783 doi = "10.1116/1.587008",
2784 notes = "substitutional c in si by mbe",
2787 @Article{powell93_2,
2788 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2789 of the ternary system",
2790 journal = "Journal of Crystal Growth",
2797 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2798 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2799 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2804 author = "H. J. Osten",
2805 title = "Modification of Growth Modes in Lattice-Mismatched
2806 Epitaxial Systems: Si/Ge",
2807 journal = "physica status solidi (a)",
2810 publisher = "WILEY-VCH Verlag",
2812 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2813 doi = "10.1002/pssa.2211450203",
2818 @Article{dietrich94,
2819 title = "Lattice distortion in a strain-compensated
2820 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2821 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2822 Methfessel and P. Zaumseil",
2823 journal = "Phys. Rev. B",
2826 pages = "17185--17190",
2830 doi = "10.1103/PhysRevB.49.17185",
2831 publisher = "American Physical Society",
2835 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2837 title = "Growth of an inverse tetragonal distorted SiGe layer
2838 on Si(001) by adding small amounts of carbon",
2841 journal = "Applied Physics Letters",
2844 pages = "3440--3442",
2845 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2846 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2847 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2849 URL = "http://link.aip.org/link/?APL/64/3440/1",
2850 doi = "10.1063/1.111235",
2851 notes = "inversely strained / distorted heterostructure",
2855 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2856 LeGoues and J. C. Tsang and F. Cardone",
2858 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2859 molecular beam epitaxy",
2862 journal = "Applied Physics Letters",
2866 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2867 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2868 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2869 FILM GROWTH; MICROSTRUCTURE",
2870 URL = "http://link.aip.org/link/?APL/60/356/1",
2871 doi = "10.1063/1.106655",
2875 author = "H. J. Osten and J. Griesche and S. Scalese",
2877 title = "Substitutional carbon incorporation in epitaxial
2878 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2879 molecular beam epitaxy",
2882 journal = "Appl. Phys. Lett.",
2886 keywords = "molecular beam epitaxial growth; semiconductor growth;
2887 wide band gap semiconductors; interstitials; silicon
2889 URL = "http://link.aip.org/link/?APL/74/836/1",
2890 doi = "10.1063/1.123384",
2891 notes = "substitutional c in si by mbe",
2895 author = "M. Born and R. Oppenheimer",
2896 title = "Zur Quantentheorie der Molekeln",
2897 journal = "Annalen der Physik",
2900 publisher = "WILEY-VCH Verlag",
2902 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2903 doi = "10.1002/andp.19273892002",
2908 @Article{hohenberg64,
2909 title = "Inhomogeneous Electron Gas",
2910 author = "P. Hohenberg and W. Kohn",
2911 journal = "Phys. Rev.",
2914 pages = "B864--B871",
2918 doi = "10.1103/PhysRev.136.B864",
2919 publisher = "American Physical Society",
2920 notes = "density functional theory, dft",
2924 title = "The calculation of atomic fields",
2925 author = "L. H. Thomas",
2926 journal = "Mathematical Proceedings of the Cambridge
2927 Philosophical Society",
2931 doi = "10.1017/S0305004100011683",
2936 author = "E. Fermi",
2937 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
2945 title = "The Wave Mechanics of an Atom with a Non-Coulomb
2946 Central Field. Part {I}. Theory and Methods",
2947 author = "D. R. Hartree",
2948 journal = "Mathematical Proceedings of the Cambridge
2949 Philosophical Society",
2953 doi = "10.1017/S0305004100011919",
2957 title = "The Theory of Complex Spectra",
2958 author = "J. C. Slater",
2959 journal = "Phys. Rev.",
2962 pages = "1293--1322",
2966 doi = "10.1103/PhysRev.34.1293",
2967 publisher = "American Physical Society",
2971 title = "Self-Consistent Equations Including Exchange and
2972 Correlation Effects",
2973 author = "W. Kohn and L. J. Sham",
2974 journal = "Phys. Rev.",
2977 pages = "A1133--A1138",
2981 doi = "10.1103/PhysRev.140.A1133",
2982 publisher = "American Physical Society",
2983 notes = "dft, exchange and correlation",
2987 title = "Density Functional and Density Matrix Method Scaling
2988 Linearly with the Number of Atoms",
2990 journal = "Phys. Rev. Lett.",
2993 pages = "3168--3171",
2997 doi = "10.1103/PhysRevLett.76.3168",
2998 publisher = "American Physical Society",
3002 title = "Edge Electron Gas",
3003 author = "Walter Kohn and Ann E. Mattsson",
3004 journal = "Phys. Rev. Lett.",
3007 pages = "3487--3490",
3011 doi = "10.1103/PhysRevLett.81.3487",
3012 publisher = "American Physical Society",
3016 title = "Nobel Lecture: Electronic structure of matter---wave
3017 functions and density functionals",
3019 journal = "Rev. Mod. Phys.",
3022 pages = "1253--1266",
3026 doi = "10.1103/RevModPhys.71.1253",
3027 publisher = "American Physical Society",
3031 title = "Iterative minimization techniques for ab initio
3032 total-energy calculations: molecular dynamics and
3033 conjugate gradients",
3034 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3035 Arias and J. D. Joannopoulos",
3036 journal = "Rev. Mod. Phys.",
3039 pages = "1045--1097",
3043 doi = "10.1103/RevModPhys.64.1045",
3044 publisher = "American Physical Society",
3048 title = "Electron densities in search of Hamiltonians",
3049 author = "Mel Levy",
3050 journal = "Phys. Rev. A",
3053 pages = "1200--1208",
3057 doi = "10.1103/PhysRevA.26.1200",
3058 publisher = "American Physical Society",
3062 title = "Strain-stabilized highly concentrated pseudomorphic
3063 $Si1-x$$Cx$ layers in Si",
3064 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3066 journal = "Phys. Rev. Lett.",
3069 pages = "3578--3581",
3073 doi = "10.1103/PhysRevLett.72.3578",
3074 publisher = "American Physical Society",
3075 notes = "high c concentration in si, heterostructure, strained
3080 title = "Phosphorous Doping of Strain-Induced
3081 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3082 by Low-Temperature Chemical Vapor Deposition",
3083 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3084 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3085 journal = "Japanese Journal of Applied Physics",
3087 number = "Part 1, No. 4B",
3088 pages = "2472--2475",
3091 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3092 doi = "10.1143/JJAP.41.2472",
3093 publisher = "The Japan Society of Applied Physics",
3094 notes = "experimental charge carrier mobility in strained si",
3098 title = "Electron Transport Model for Strained Silicon-Carbon
3100 author = "Shu-Tong Chang and Chung-Yi Lin",
3101 journal = "Japanese J. Appl. Phys.",
3104 pages = "2257--2262",
3107 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3108 doi = "10.1143/JJAP.44.2257",
3109 publisher = "The Japan Society of Applied Physics",
3110 notes = "enhance of electron mobility in strained si",
3113 @Article{kissinger94,
3114 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3117 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3118 y] layers on Si(001)",
3121 journal = "Applied Physics Letters",
3124 pages = "3356--3358",
3125 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3126 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3127 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3128 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3129 URL = "http://link.aip.org/link/?APL/65/3356/1",
3130 doi = "10.1063/1.112390",
3131 notes = "strained si influence on optical properties",
3135 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3138 title = "Substitutional versus interstitial carbon
3139 incorporation during pseudomorphic growth of Si[sub 1 -
3140 y]{C}[sub y] on Si(001)",
3143 journal = "Journal of Applied Physics",
3146 pages = "6711--6715",
3147 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3148 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3150 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3151 doi = "10.1063/1.363797",
3152 notes = "mbe substitutional vs interstitial c incorporation",
3156 author = "H. J. Osten and P. Gaworzewski",
3158 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3159 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3163 journal = "J. Appl. Phys.",
3166 pages = "4977--4981",
3167 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3168 semiconductors; semiconductor epitaxial layers; carrier
3169 density; Hall mobility; interstitials; defect states",
3170 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3171 doi = "10.1063/1.366364",
3172 notes = "charge transport in strained si",
3176 title = "Carbon-mediated aggregation of self-interstitials in
3177 silicon: {A} large-scale molecular dynamics study",
3178 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3179 journal = "Phys. Rev. B",
3186 doi = "10.1103/PhysRevB.69.155214",
3187 publisher = "American Physical Society",
3188 notes = "simulation using promising tersoff reparametrization",
3192 title = "Event-Based Relaxation of Continuous Disordered
3194 author = "G. T. Barkema and Normand Mousseau",
3195 journal = "Phys. Rev. Lett.",
3198 pages = "4358--4361",
3202 doi = "10.1103/PhysRevLett.77.4358",
3203 publisher = "American Physical Society",
3204 notes = "activation relaxation technique, art, speed up slow
3209 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3210 Minoukadeh and F. Willaime",
3212 title = "Some improvements of the activation-relaxation
3213 technique method for finding transition pathways on
3214 potential energy surfaces",
3217 journal = "J. Chem. Phys.",
3223 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3224 surfaces; vacancies (crystal)",
3225 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3226 doi = "10.1063/1.3088532",
3227 notes = "improvements to art, refs for methods to find
3228 transition pathways",
3231 @Article{parrinello81,
3232 author = "M. Parrinello and A. Rahman",
3234 title = "Polymorphic transitions in single crystals: {A} new
3235 molecular dynamics method",
3238 journal = "J. Appl. Phys.",
3241 pages = "7182--7190",
3242 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3243 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3244 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3245 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3246 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3248 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3249 doi = "10.1063/1.328693",
3252 @Article{stillinger85,
3253 title = "Computer simulation of local order in condensed phases
3255 author = "Frank H. Stillinger and Thomas A. Weber",
3256 journal = "Phys. Rev. B",
3259 pages = "5262--5271",
3263 doi = "10.1103/PhysRevB.31.5262",
3264 publisher = "American Physical Society",
3268 title = "Empirical potential for hydrocarbons for use in
3269 simulating the chemical vapor deposition of diamond
3271 author = "Donald W. Brenner",
3272 journal = "Phys. Rev. B",
3275 pages = "9458--9471",
3279 doi = "10.1103/PhysRevB.42.9458",
3280 publisher = "American Physical Society",
3281 notes = "brenner hydro carbons",
3285 title = "Modeling of Covalent Bonding in Solids by Inversion of
3286 Cohesive Energy Curves",
3287 author = "Martin Z. Bazant and Efthimios Kaxiras",
3288 journal = "Phys. Rev. Lett.",
3291 pages = "4370--4373",
3295 doi = "10.1103/PhysRevLett.77.4370",
3296 publisher = "American Physical Society",
3297 notes = "first si edip",
3301 title = "Environment-dependent interatomic potential for bulk
3303 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3305 journal = "Phys. Rev. B",
3308 pages = "8542--8552",
3312 doi = "10.1103/PhysRevB.56.8542",
3313 publisher = "American Physical Society",
3314 notes = "second si edip",
3318 title = "Interatomic potential for silicon defects and
3320 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3321 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3322 journal = "Phys. Rev. B",
3325 pages = "2539--2550",
3329 doi = "10.1103/PhysRevB.58.2539",
3330 publisher = "American Physical Society",
3331 notes = "latest si edip, good dislocation explanation",
3335 title = "{PARCAS} molecular dynamics code",
3336 author = "K. Nordlund",
3341 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3343 author = "Arthur F. Voter",
3344 journal = "Phys. Rev. Lett.",
3347 pages = "3908--3911",
3351 doi = "10.1103/PhysRevLett.78.3908",
3352 publisher = "American Physical Society",
3353 notes = "hyperdynamics, accelerated md",
3357 author = "Arthur F. Voter",
3359 title = "A method for accelerating the molecular dynamics
3360 simulation of infrequent events",
3363 journal = "J. Chem. Phys.",
3366 pages = "4665--4677",
3367 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3368 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3369 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3370 energy functions; surface diffusion; reaction kinetics
3371 theory; potential energy surfaces",
3372 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3373 doi = "10.1063/1.473503",
3374 notes = "improved hyperdynamics md",
3377 @Article{sorensen2000,
3378 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3380 title = "Temperature-accelerated dynamics for simulation of
3384 journal = "J. Chem. Phys.",
3387 pages = "9599--9606",
3388 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3389 MOLECULAR DYNAMICS METHOD; surface diffusion",
3390 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3391 doi = "10.1063/1.481576",
3392 notes = "temperature accelerated dynamics, tad",
3396 title = "Parallel replica method for dynamics of infrequent
3398 author = "Arthur F. Voter",
3399 journal = "Phys. Rev. B",
3402 pages = "R13985--R13988",
3406 doi = "10.1103/PhysRevB.57.R13985",
3407 publisher = "American Physical Society",
3408 notes = "parallel replica method, accelerated md",
3412 author = "Xiongwu Wu and Shaomeng Wang",
3414 title = "Enhancing systematic motion in molecular dynamics
3418 journal = "J. Chem. Phys.",
3421 pages = "9401--9410",
3422 keywords = "molecular dynamics method; argon; Lennard-Jones
3423 potential; crystallisation; liquid theory",
3424 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3425 doi = "10.1063/1.478948",
3426 notes = "self guided md, sgmd, accelerated md, enhancing
3430 @Article{choudhary05,
3431 author = "Devashish Choudhary and Paulette Clancy",
3433 title = "Application of accelerated molecular dynamics schemes
3434 to the production of amorphous silicon",
3437 journal = "J. Chem. Phys.",
3443 keywords = "molecular dynamics method; silicon; glass structure;
3444 amorphous semiconductors",
3445 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3446 doi = "10.1063/1.1878733",
3447 notes = "explanation of sgmd and hyper md, applied to amorphous
3452 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3454 title = "Carbon precipitation in silicon: Why is it so
3458 journal = "Appl. Phys. Lett.",
3461 pages = "3336--3338",
3462 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3463 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3465 URL = "http://link.aip.org/link/?APL/62/3336/1",
3466 doi = "10.1063/1.109063",
3467 notes = "interfacial energy of cubic sic and si, si self
3468 interstitials necessary for precipitation, volume
3469 decrease, high interface energy",
3472 @Article{chaussende08,
3473 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3474 journal = "J. Cryst. Growth",
3479 note = "Proceedings of the E-MRS Conference, Symposium G -
3480 Substrates of Wide Bandgap Materials",
3482 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3483 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3484 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3485 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3486 and A. Andreadou and E. K. Polychroniadis and C.
3487 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3488 notes = "3c-sic crystal growth, sic fabrication + links,
3492 @Article{chaussende07,
3493 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3494 title = "Status of Si{C} bulk growth processes",
3495 journal = "Journal of Physics D: Applied Physics",
3499 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3501 notes = "review of sic single crystal growth methods, process
3506 title = "Forces in Molecules",
3507 author = "R. P. Feynman",
3508 journal = "Phys. Rev.",
3515 doi = "10.1103/PhysRev.56.340",
3516 publisher = "American Physical Society",
3517 notes = "hellmann feynman forces",
3521 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3522 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3523 their Contrasting Properties",
3524 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3526 journal = "Phys. Rev. Lett.",
3533 doi = "10.1103/PhysRevLett.84.943",
3534 publisher = "American Physical Society",
3535 notes = "si sio2 and sic sio2 interface",
3538 @Article{djurabekova08,
3539 title = "Atomistic simulation of the interface structure of Si
3540 nanocrystals embedded in amorphous silica",
3541 author = "Flyura Djurabekova and Kai Nordlund",
3542 journal = "Phys. Rev. B",
3549 doi = "10.1103/PhysRevB.77.115325",
3550 publisher = "American Physical Society",
3551 notes = "nc-si in sio2, interface energy, nc construction,
3552 angular distribution, coordination",
3556 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3557 W. Liang and J. Zou",
3559 title = "Nature of interfacial defects and their roles in
3560 strain relaxation at highly lattice mismatched
3561 3{C}-Si{C}/Si (001) interface",
3564 journal = "J. Appl. Phys.",
3570 keywords = "anelastic relaxation; crystal structure; dislocations;
3571 elemental semiconductors; semiconductor growth;
3572 semiconductor thin films; silicon; silicon compounds;
3573 stacking faults; wide band gap semiconductors",
3574 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3575 doi = "10.1063/1.3234380",
3576 notes = "sic/si interface, follow refs, tem image
3577 deconvolution, dislocation defects",
3580 @Article{kitabatake93,
3581 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3584 title = "Simulations and experiments of Si{C} heteroepitaxial
3585 growth on Si(001) surface",
3588 journal = "J. Appl. Phys.",
3591 pages = "4438--4445",
3592 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3593 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3594 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3595 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3596 doi = "10.1063/1.354385",
3597 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3601 @Article{kitabatake97,
3602 author = "Makoto Kitabatake",
3603 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3604 Heteroepitaxial Growth",
3605 publisher = "WILEY-VCH Verlag",
3607 journal = "physica status solidi (b)",
3610 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3611 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3612 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3616 title = "Strain relaxation and thermal stability of the
3617 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3619 journal = "Thin Solid Films",
3626 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3627 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3628 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3629 keywords = "Strain relaxation",
3630 keywords = "Interfaces",
3631 keywords = "Thermal stability",
3632 keywords = "Molecular dynamics",
3633 notes = "tersoff sic/si interface study",
3637 title = "Ab initio Study of Misfit Dislocations at the
3638 $Si{C}/Si(001)$ Interface",
3639 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3641 journal = "Phys. Rev. Lett.",
3648 doi = "10.1103/PhysRevLett.89.156101",
3649 publisher = "American Physical Society",
3650 notes = "sic/si interface study",
3653 @Article{pizzagalli03,
3654 title = "Theoretical investigations of a highly mismatched
3655 interface: Si{C}/Si(001)",
3656 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3658 journal = "Phys. Rev. B",
3665 doi = "10.1103/PhysRevB.68.195302",
3666 publisher = "American Physical Society",
3667 notes = "tersoff md and ab initio sic/si interface study",
3671 title = "Atomic configurations of dislocation core and twin
3672 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3673 electron microscopy",
3674 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3675 H. Zheng and J. W. Liang",
3676 journal = "Phys. Rev. B",
3683 doi = "10.1103/PhysRevB.75.184103",
3684 publisher = "American Physical Society",
3685 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3689 @Article{hornstra58,
3690 title = "Dislocations in the diamond lattice",
3691 journal = "Journal of Physics and Chemistry of Solids",
3698 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3699 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3700 author = "J. Hornstra",
3701 notes = "dislocations in diamond lattice",
3705 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3706 Ion `Hot' Implantation",
3707 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3708 Hirao and Naoki Arai and Tomio Izumi",
3709 journal = "Japanese J. Appl. Phys.",
3711 number = "Part 1, No. 2A",
3715 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3716 doi = "10.1143/JJAP.31.343",
3717 publisher = "The Japan Society of Applied Physics",
3718 notes = "c-c bonds in c implanted si, hot implantation
3719 efficiency, c-c hard to break by thermal annealing",
3722 @Article{eichhorn99,
3723 author = "F. Eichhorn and N. Schell and W. Matz and R.
3726 title = "Strain and Si{C} particle formation in silicon
3727 implanted with carbon ions of medium fluence studied by
3728 synchrotron x-ray diffraction",
3731 journal = "J. Appl. Phys.",
3734 pages = "4184--4187",
3735 keywords = "silicon; carbon; elemental semiconductors; chemical
3736 interdiffusion; ion implantation; X-ray diffraction;
3737 precipitation; semiconductor doping",
3738 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3739 doi = "10.1063/1.371344",
3740 notes = "sic conversion by ibs, detected substitutional carbon,
3741 expansion of si lattice",
3744 @Article{eichhorn02,
3745 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3746 Metzger and W. Matz and R. K{\"{o}}gler",
3748 title = "Structural relation between Si and Si{C} formed by
3749 carbon ion implantation",
3752 journal = "J. Appl. Phys.",
3755 pages = "1287--1292",
3756 keywords = "silicon compounds; wide band gap semiconductors; ion
3757 implantation; annealing; X-ray scattering; transmission
3758 electron microscopy",
3759 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3760 doi = "10.1063/1.1428105",
3761 notes = "3c-sic alignement to si host in ibs depending on
3762 temperature, might explain c into c sub trafo",
3766 author = "G Lucas and M Bertolus and L Pizzagalli",
3767 title = "An environment-dependent interatomic potential for
3768 silicon carbide: calculation of bulk properties,
3769 high-pressure phases, point and extended defects, and
3770 amorphous structures",
3771 journal = "J. Phys.: Condens. Matter",
3775 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3781 author = "J Godet and L Pizzagalli and S Brochard and P
3783 title = "Comparison between classical potentials and ab initio
3784 methods for silicon under large shear",
3785 journal = "J. Phys.: Condens. Matter",
3789 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3791 notes = "comparison of empirical potentials, stillinger weber,
3792 edip, tersoff, ab initio",
3795 @Article{moriguchi98,
3796 title = "Verification of Tersoff's Potential for Static
3797 Structural Analysis of Solids of Group-{IV} Elements",
3798 author = "Koji Moriguchi and Akira Shintani",
3799 journal = "Japanese J. Appl. Phys.",
3801 number = "Part 1, No. 2",
3805 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3806 doi = "10.1143/JJAP.37.414",
3807 publisher = "The Japan Society of Applied Physics",
3808 notes = "tersoff stringent test",
3811 @Article{mazzarolo01,
3812 title = "Low-energy recoils in crystalline silicon: Quantum
3814 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3815 Lulli and Eros Albertazzi",
3816 journal = "Phys. Rev. B",
3823 doi = "10.1103/PhysRevB.63.195207",
3824 publisher = "American Physical Society",
3827 @Article{holmstroem08,
3828 title = "Threshold defect production in silicon determined by
3829 density functional theory molecular dynamics
3831 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3832 journal = "Phys. Rev. B",
3839 doi = "10.1103/PhysRevB.78.045202",
3840 publisher = "American Physical Society",
3841 notes = "threshold displacement comparison empirical and ab
3845 @Article{nordlund97,
3846 title = "Repulsive interatomic potentials calculated using
3847 Hartree-Fock and density-functional theory methods",
3848 journal = "Nucl. Instrum. Methods Phys. Res. B",
3855 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3856 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3857 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3858 notes = "repulsive ab initio potential",
3862 title = "Efficiency of ab-initio total energy calculations for
3863 metals and semiconductors using a plane-wave basis
3865 journal = "Comput. Mater. Sci.",
3872 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3873 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3874 author = "G. Kresse and J. Furthm{\"{u}}ller",
3879 title = "Projector augmented-wave method",
3880 author = "P. E. Bl{\"o}chl",
3881 journal = "Phys. Rev. B",
3884 pages = "17953--17979",
3888 doi = "10.1103/PhysRevB.50.17953",
3889 publisher = "American Physical Society",
3890 notes = "paw method",
3894 title = "Norm-Conserving Pseudopotentials",
3895 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3896 journal = "Phys. Rev. Lett.",
3899 pages = "1494--1497",
3903 doi = "10.1103/PhysRevLett.43.1494",
3904 publisher = "American Physical Society",
3905 notes = "norm-conserving pseudopotentials",
3908 @Article{vanderbilt90,
3909 title = "Soft self-consistent pseudopotentials in a generalized
3910 eigenvalue formalism",
3911 author = "David Vanderbilt",
3912 journal = "Phys. Rev. B",
3915 pages = "7892--7895",
3919 doi = "10.1103/PhysRevB.41.7892",
3920 publisher = "American Physical Society",
3921 notes = "vasp pseudopotentials",
3924 @Article{ceperley80,
3925 title = "Ground State of the Electron Gas by a Stochastic
3927 author = "D. M. Ceperley and B. J. Alder",
3928 journal = "Phys. Rev. Lett.",
3935 doi = "10.1103/PhysRevLett.45.566",
3936 publisher = "American Physical Society",
3940 title = "Self-interaction correction to density-functional
3941 approximations for many-electron systems",
3942 author = "J. P. Perdew and Alex Zunger",
3943 journal = "Phys. Rev. B",
3946 pages = "5048--5079",
3950 doi = "10.1103/PhysRevB.23.5048",
3951 publisher = "American Physical Society",
3955 title = "Accurate and simple density functional for the
3956 electronic exchange energy: Generalized gradient
3958 author = "John P. Perdew and Yue Wang",
3959 journal = "Phys. Rev. B",
3962 pages = "8800--8802",
3966 doi = "10.1103/PhysRevB.33.8800",
3967 publisher = "American Physical Society",
3968 notes = "rapid communication gga",
3972 title = "Generalized gradient approximations for exchange and
3973 correlation: {A} look backward and forward",
3974 journal = "Physica B: Condensed Matter",
3981 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3982 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3983 author = "John P. Perdew",
3984 notes = "gga overview",
3988 title = "Atoms, molecules, solids, and surfaces: Applications
3989 of the generalized gradient approximation for exchange
3991 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3992 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3993 and Carlos Fiolhais",
3994 journal = "Phys. Rev. B",
3997 pages = "6671--6687",
4001 doi = "10.1103/PhysRevB.46.6671",
4002 publisher = "American Physical Society",
4003 notes = "gga pw91 (as in vasp)",
4006 @Article{baldereschi73,
4007 title = "Mean-Value Point in the Brillouin Zone",
4008 author = "A. Baldereschi",
4009 journal = "Phys. Rev. B",
4012 pages = "5212--5215",
4016 doi = "10.1103/PhysRevB.7.5212",
4017 publisher = "American Physical Society",
4018 notes = "mean value k point",
4022 title = "Ab initio pseudopotential calculations of dopant
4024 journal = "Comput. Mater. Sci.",
4031 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4032 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4033 author = "Jing Zhu",
4034 keywords = "TED (transient enhanced diffusion)",
4035 keywords = "Boron dopant",
4036 keywords = "Carbon dopant",
4037 keywords = "Defect",
4038 keywords = "ab initio pseudopotential method",
4039 keywords = "Impurity cluster",
4040 notes = "binding of c to si interstitial, c in si defects",
4044 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4046 title = "Si{C} buried layer formation by ion beam synthesis at
4050 journal = "Appl. Phys. Lett.",
4053 pages = "2646--2648",
4054 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4055 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4056 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4057 ELECTRON MICROSCOPY",
4058 URL = "http://link.aip.org/link/?APL/66/2646/1",
4059 doi = "10.1063/1.113112",
4060 notes = "precipitation mechanism by substitutional carbon, si
4061 self interstitials react with further implanted c",
4065 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4066 Kolodzey and A. Hairie",
4068 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4072 journal = "J. Appl. Phys.",
4075 pages = "4631--4633",
4076 keywords = "silicon compounds; precipitation; localised modes;
4077 semiconductor epitaxial layers; infrared spectra;
4078 Fourier transform spectra; thermal stability;
4080 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4081 doi = "10.1063/1.368703",
4082 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4086 author = "R Jones and B J Coomer and P R Briddon",
4087 title = "Quantum mechanical modelling of defects in
4089 journal = "J. Phys.: Condens. Matter",
4093 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4095 notes = "ab inito dft intro, vibrational modes, c defect in
4100 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4101 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4102 J. E. Greene and S. G. Bishop",
4104 title = "Carbon incorporation pathways and lattice sites in
4105 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4106 molecular-beam epitaxy",
4109 journal = "J. Appl. Phys.",
4112 pages = "5716--5727",
4113 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4114 doi = "10.1063/1.1465122",
4115 notes = "c substitutional incorporation pathway, dft and expt",
4119 title = "Dynamic properties of interstitial carbon and
4120 carbon-carbon pair defects in silicon",
4121 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4123 journal = "Phys. Rev. B",
4126 pages = "2188--2194",
4130 doi = "10.1103/PhysRevB.55.2188",
4131 publisher = "American Physical Society",
4132 notes = "ab initio c in si and di-carbon defect, no formation
4133 energies, different migration barriers and paths",
4137 title = "Interstitial carbon and the carbon-carbon pair in
4138 silicon: Semiempirical electronic-structure
4140 author = "Matthew J. Burnard and Gary G. DeLeo",
4141 journal = "Phys. Rev. B",
4144 pages = "10217--10225",
4148 doi = "10.1103/PhysRevB.47.10217",
4149 publisher = "American Physical Society",
4150 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4151 carbon defect, formation energies",
4155 title = "Electronic structure of interstitial carbon in
4157 author = "Morgan Besson and Gary G. DeLeo",
4158 journal = "Phys. Rev. B",
4161 pages = "4028--4033",
4165 doi = "10.1103/PhysRevB.43.4028",
4166 publisher = "American Physical Society",
4170 title = "Review of atomistic simulations of surface diffusion
4171 and growth on semiconductors",
4172 journal = "Comput. Mater. Sci.",
4177 note = "Proceedings of the Workshop on Virtual Molecular Beam
4180 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4181 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4182 author = "Efthimios Kaxiras",
4183 notes = "might contain c 100 db formation energy, overview md,
4184 tight binding, first principles",
4187 @Article{kaukonen98,
4188 title = "Effect of {N} and {B} doping on the growth of {CVD}
4190 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4192 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4193 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4195 journal = "Phys. Rev. B",
4198 pages = "9965--9970",
4202 doi = "10.1103/PhysRevB.57.9965",
4203 publisher = "American Physical Society",
4204 notes = "constrained conjugate gradient relaxation technique
4209 title = "Correlation between the antisite pair and the ${DI}$
4211 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4212 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4214 journal = "Phys. Rev. B",
4221 doi = "10.1103/PhysRevB.67.155203",
4222 publisher = "American Physical Society",
4226 title = "Production and recovery of defects in Si{C} after
4227 irradiation and deformation",
4228 journal = "J. Nucl. Mater.",
4231 pages = "1803--1808",
4235 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4236 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4237 author = "J. Chen and P. Jung and H. Klein",
4241 title = "Accumulation, dynamic annealing and thermal recovery
4242 of ion-beam-induced disorder in silicon carbide",
4243 journal = "Nucl. Instrum. Methods Phys. Res. B",
4250 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4251 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4252 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4255 @Article{bockstedte03,
4256 title = "Ab initio study of the migration of intrinsic defects
4258 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4260 journal = "Phys. Rev. B",
4267 doi = "10.1103/PhysRevB.68.205201",
4268 publisher = "American Physical Society",
4269 notes = "defect migration in sic",
4273 title = "Theoretical study of vacancy diffusion and
4274 vacancy-assisted clustering of antisites in Si{C}",
4275 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4277 journal = "Phys. Rev. B",
4284 doi = "10.1103/PhysRevB.68.155208",
4285 publisher = "American Physical Society",
4289 journal = "Telegrafiya i Telefoniya bez Provodov",
4293 author = "O. V. Lossev",
4297 title = "Luminous carborundum detector and detection effect and
4298 oscillations with crystals",
4299 journal = "Philosophical Magazine Series 7",
4302 pages = "1024--1044",
4304 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4305 author = "O. V. Lossev",
4309 journal = "Physik. Zeitschr.",
4313 author = "O. V. Lossev",
4317 journal = "Physik. Zeitschr.",
4321 author = "O. V. Lossev",
4325 journal = "Physik. Zeitschr.",
4329 author = "O. V. Lossev",
4333 title = "A note on carborundum",
4334 journal = "Electrical World",
4338 author = "H. J. Round",
4341 @Article{vashishath08,
4342 title = "Recent trends in silicon carbide device research",
4343 journal = "Mj. Int. J. Sci. Tech.",
4348 author = "Munish Vashishath and Ashoke K. Chatterjee",
4349 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4350 notes = "sic polytype electronic properties",
4354 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4356 title = "Growth and Properties of beta-Si{C} Single Crystals",
4359 journal = "Journal of Applied Physics",
4363 URL = "http://link.aip.org/link/?JAP/37/333/1",
4364 doi = "10.1063/1.1707837",
4365 notes = "sic melt growth",
4369 author = "A. E. van Arkel and J. H. de Boer",
4370 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4372 publisher = "WILEY-VCH Verlag GmbH",
4374 journal = "Z. Anorg. Chem.",
4377 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4378 doi = "10.1002/zaac.19251480133",
4379 notes = "van arkel apparatus",
4383 author = "K. Moers",
4385 journal = "Z. Anorg. Chem.",
4388 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4393 author = "J. T. Kendall",
4394 title = "Electronic Conduction in Silicon Carbide",
4397 journal = "The Journal of Chemical Physics",
4401 URL = "http://link.aip.org/link/?JCP/21/821/1",
4402 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4407 author = "J. A. Lely",
4409 journal = "Ber. Deut. Keram. Ges.",
4412 notes = "lely sublimation growth process",
4415 @Article{knippenberg63,
4416 author = "W. F. Knippenberg",
4418 journal = "Philips Res. Repts.",
4421 notes = "acheson process",
4424 @Article{hoffmann82,
4425 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4428 title = "Silicon carbide blue light emitting diodes with
4429 improved external quantum efficiency",
4432 journal = "Journal of Applied Physics",
4435 pages = "6962--6967",
4436 keywords = "light emitting diodes; silicon carbides; quantum
4437 efficiency; visible radiation; experimental data;
4438 epitaxy; fabrication; medium temperature; layers;
4439 aluminium; nitrogen; substrates; pn junctions;
4440 electroluminescence; spectra; current density;
4442 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4443 doi = "10.1063/1.330041",
4444 notes = "blue led, sublimation process",
4448 author = "Philip Neudeck",
4449 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4450 Road 44135 Cleveland OH",
4451 title = "Progress in silicon carbide semiconductor electronics
4453 journal = "Journal of Electronic Materials",
4454 publisher = "Springer Boston",
4456 keyword = "Chemistry and Materials Science",
4460 URL = "http://dx.doi.org/10.1007/BF02659688",
4461 note = "10.1007/BF02659688",
4463 notes = "sic data, advantages of 3c sic",
4466 @Article{bhatnagar93,
4467 author = "M. Bhatnagar and B. J. Baliga",
4468 journal = "Electron Devices, IEEE Transactions on",
4469 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4476 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4477 rectifiers;Si;SiC;breakdown voltages;drift region
4478 properties;output characteristics;power MOSFETs;power
4479 semiconductor devices;switching characteristics;thermal
4480 analysis;Schottky-barrier diodes;electric breakdown of
4481 solids;insulated gate field effect transistors;power
4482 transistors;semiconductor materials;silicon;silicon
4483 compounds;solid-state rectifiers;thermal analysis;",
4484 doi = "10.1109/16.199372",
4486 notes = "comparison 3c 6h sic and si devices",
4490 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4491 A. Powell and C. S. Salupo and L. G. Matus",
4492 journal = "Electron Devices, IEEE Transactions on",
4493 title = "Electrical properties of epitaxial 3{C}- and
4494 6{H}-Si{C} p-n junction diodes produced side-by-side on
4495 6{H}-Si{C} substrates",
4501 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4502 C;6H-SiC layers;6H-SiC substrates;CVD
4503 process;SiC;chemical vapor deposition;doping;electrical
4504 properties;epitaxial layers;light
4505 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4506 diodes;polytype;rectification characteristics;reverse
4507 leakage current;reverse voltages;temperature;leakage
4508 currents;power electronics;semiconductor
4509 diodes;semiconductor epitaxial layers;semiconductor
4510 growth;semiconductor materials;silicon
4511 compounds;solid-state rectifiers;substrates;vapour
4512 phase epitaxial growth;",
4513 doi = "10.1109/16.285038",
4515 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4520 author = "N. Schulze and D. L. Barrett and G. Pensl",
4522 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4523 single crystals by physical vapor transport",
4526 journal = "Applied Physics Letters",
4529 pages = "1632--1634",
4530 keywords = "silicon compounds; semiconductor materials;
4531 semiconductor growth; crystal growth from vapour;
4532 photoluminescence; Hall mobility",
4533 URL = "http://link.aip.org/link/?APL/72/1632/1",
4534 doi = "10.1063/1.121136",
4535 notes = "micropipe free 6h-sic pvt growth",
4539 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4541 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4544 journal = "Applied Physics Letters",
4548 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4549 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4550 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4551 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4553 URL = "http://link.aip.org/link/?APL/50/221/1",
4554 doi = "10.1063/1.97667",
4555 notes = "apb 3c-sic heteroepitaxy on si",
4558 @Article{shibahara86,
4559 title = "Surface morphology of cubic Si{C}(100) grown on
4560 Si(100) by chemical vapor deposition",
4561 journal = "Journal of Crystal Growth",
4568 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4569 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4570 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4572 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4575 @Article{desjardins96,
4576 author = "P. Desjardins and J. E. Greene",
4578 title = "Step-flow epitaxial growth on two-domain surfaces",
4581 journal = "Journal of Applied Physics",
4584 pages = "1423--1434",
4585 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4586 FILM GROWTH; SURFACE STRUCTURE",
4587 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4588 doi = "10.1063/1.360980",
4589 notes = "apb model",
4593 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4595 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4596 carbonization of silicon",
4599 journal = "Journal of Applied Physics",
4602 pages = "2070--2073",
4603 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4604 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4606 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4607 doi = "10.1063/1.360184",
4608 notes = "ssmbe of sic on si, lower temperatures",
4612 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4613 {MBE} using surface superstructure",
4614 journal = "Journal of Crystal Growth",
4621 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4622 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4623 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4624 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4625 notes = "gas source mbe of 3c-sic on 6h-sic",
4628 @Article{yoshinobu92,
4629 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4630 and Takashi Fuyuki and Hiroyuki Matsunami",
4632 title = "Lattice-matched epitaxial growth of single crystalline
4633 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4634 molecular beam epitaxy",
4637 journal = "Applied Physics Letters",
4641 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4642 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4643 INTERFACE STRUCTURE",
4644 URL = "http://link.aip.org/link/?APL/60/824/1",
4645 doi = "10.1063/1.107430",
4646 notes = "gas source mbe of 3c-sic on 6h-sic",
4649 @Article{yoshinobu90,
4650 title = "Atomic level control in gas source {MBE} growth of
4652 journal = "Journal of Crystal Growth",
4659 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4660 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4661 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4662 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4663 notes = "gas source mbe of 3c-sic on 3c-sic",
4667 title = "Atomic layer epitaxy controlled by surface
4668 superstructures in Si{C}",
4669 journal = "Thin Solid Films",
4676 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4677 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4678 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4680 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4685 title = "Microscopic mechanisms of accurate layer-by-layer
4686 growth of [beta]-Si{C}",
4687 journal = "Thin Solid Films",
4694 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4695 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4696 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4697 and S. Misawa and E. Sakuma and S. Yoshida",
4698 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4703 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4705 title = "Effects of gas flow ratio on silicon carbide thin film
4706 growth mode and polytype formation during gas-source
4707 molecular beam epitaxy",
4710 journal = "Applied Physics Letters",
4713 pages = "2851--2853",
4714 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4715 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4716 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4718 URL = "http://link.aip.org/link/?APL/65/2851/1",
4719 doi = "10.1063/1.112513",
4720 notes = "gas source mbe of 6h-sic on 6h-sic",
4724 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4725 title = "Heterointerface Control and Epitaxial Growth of
4726 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4727 publisher = "WILEY-VCH Verlag",
4729 journal = "physica status solidi (b)",
4732 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4737 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4738 journal = "Journal of Crystal Growth",
4745 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4746 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4747 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4748 keywords = "Reflection high-energy electron diffraction (RHEED)",
4749 keywords = "Scanning electron microscopy (SEM)",
4750 keywords = "Silicon carbide",
4751 keywords = "Silicon",
4752 keywords = "Island growth",
4753 notes = "lower temperature, 550-700",
4756 @Article{hatayama95,
4757 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4758 on Si using hydrocarbon radicals by gas source
4759 molecular beam epitaxy",
4760 journal = "Journal of Crystal Growth",
4767 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4768 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4769 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4770 and Hiroyuki Matsunami",
4774 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4775 title = "The Preference of Silicon Carbide for Growth in the
4776 Metastable Cubic Form",
4777 journal = "Journal of the American Ceramic Society",
4780 publisher = "Blackwell Publishing Ltd",
4782 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4783 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4784 pages = "2630--2633",
4785 keywords = "silicon carbide, crystal growth, crystal structure,
4786 calculations, stability",
4788 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4789 polytype dft calculation refs",
4792 @Article{allendorf91,
4793 title = "The adsorption of {H}-atoms on polycrystalline
4794 [beta]-silicon carbide",
4795 journal = "Surface Science",
4802 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4803 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4804 author = "Mark D. Allendorf and Duane A. Outka",
4805 notes = "h adsorption on 3c-sic",
4808 @Article{eaglesham93,
4809 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4810 D. P. Adams and S. M. Yalisove",
4812 title = "Effect of {H} on Si molecular-beam epitaxy",
4815 journal = "Journal of Applied Physics",
4818 pages = "6615--6618",
4819 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4820 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4821 DIFFUSION; ADSORPTION",
4822 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4823 doi = "10.1063/1.355101",
4824 notes = "h incorporation on si surface, lower surface
4829 author = "Ronald C. Newman",
4830 title = "Carbon in Crystalline Silicon",
4831 journal = "MRS Online Proceedings Library",
4836 doi = "10.1557/PROC-59-403",
4837 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4838 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4842 title = "The diffusivity of carbon in silicon",
4843 journal = "Journal of Physics and Chemistry of Solids",
4850 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4851 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4852 author = "R. C. Newman and J. Wakefield",
4853 notes = "diffusivity of substitutional c in si",
4857 author = "U. Gösele",
4858 title = "The Role of Carbon and Point Defects in Silicon",
4859 journal = "MRS Online Proceedings Library",
4864 doi = "10.1557/PROC-59-419",
4865 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4866 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4869 @Article{mukashev82,
4870 title = "Defects in Carbon-Implanted Silicon",
4871 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4872 Fukuoka and Haruo Saito",
4873 journal = "Japanese Journal of Applied Physics",
4875 number = "Part 1, No. 2",
4879 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4880 doi = "10.1143/JJAP.21.399",
4881 publisher = "The Japan Society of Applied Physics",
4885 title = "Convergence of supercell calculations for point
4886 defects in semiconductors: Vacancy in silicon",
4887 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4889 journal = "Phys. Rev. B",
4892 pages = "1318--1325",
4896 doi = "10.1103/PhysRevB.58.1318",
4897 publisher = "American Physical Society",
4898 notes = "convergence k point supercell size, vacancy in
4903 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4904 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4905 K{\"{o}}gler and W. Skorupa",
4907 title = "Spectroscopic characterization of phases formed by
4908 high-dose carbon ion implantation in silicon",
4911 journal = "Journal of Applied Physics",
4914 pages = "2978--2984",
4915 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4916 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4917 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4918 DEPENDENCE; PRECIPITATES; ANNEALING",
4919 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4920 doi = "10.1063/1.358714",
4923 @Article{romano-rodriguez96,
4924 title = "Detailed analysis of [beta]-Si{C} formation by high
4925 dose carbon ion implantation in silicon",
4926 journal = "Materials Science and Engineering B",
4931 note = "European Materials Research Society 1995 Spring
4932 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4933 Oxygen in Silicon and in Other Elemental
4936 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4937 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4938 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4939 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4941 keywords = "Silicon",
4942 keywords = "Ion implantation",
4943 notes = "incoherent 3c-sic precipitate",