2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1080 doi = "10.1063/1.358826",
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1159 Silicon Materials Research for Electronic and
1160 Photovoltaic Applications",
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1276 journal = "Mater. Sci. Eng., C",
1281 note = "Current Trends in Nanoscience - from Materials to
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1293 application in buffer layer for Ga{N} epitaxial
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1304 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
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1309 @Article{yamamoto04,
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1312 implantation into Si(1 1 1) substrate",
1313 journal = "Journal of Crystal Growth",
1318 note = "Proceedings of the 11th Biennial (US) Workshop on
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1329 title = "Substrates for gallium nitride epitaxy",
1330 journal = "Materials Science and Engineering: R: Reports",
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1355 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
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1357 notes = "gan on 3c-sic (first time?)",
1361 author = "B. J. Alder and T. E. Wainwright",
1362 title = "Phase Transition for a Hard Sphere System",
1365 journal = "J. Chem. Phys.",
1368 pages = "1208--1209",
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1370 doi = "10.1063/1.1743957",
1374 author = "B. J. Alder and T. E. Wainwright",
1375 title = "Studies in Molecular Dynamics. {I}. General Method",
1378 journal = "J. Chem. Phys.",
1382 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. Lett.",
1397 doi = "10.1103/PhysRevLett.56.632",
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1432 title = "Empirical Interatomic Potential for Carbon, with
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1435 journal = "Phys. Rev. Lett.",
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1450 journal = "Phys. Rev. B",
1453 pages = "5566--5568",
1457 doi = "10.1103/PhysRevB.39.5566",
1458 publisher = "American Physical Society",
1462 title = "Carbon defects and defect reactions in silicon",
1463 author = "J. Tersoff",
1464 journal = "Phys. Rev. Lett.",
1467 pages = "1757--1760",
1471 doi = "10.1103/PhysRevLett.64.1757",
1472 publisher = "American Physical Society",
1476 title = "Point defects and dopant diffusion in silicon",
1477 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1478 journal = "Rev. Mod. Phys.",
1485 doi = "10.1103/RevModPhys.61.289",
1486 publisher = "American Physical Society",
1490 title = "Silicon carbide: synthesis and processing",
1491 journal = "Nucl. Instrum. Methods Phys. Res. B",
1496 note = "Radiation Effects in Insulators",
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1506 journal = "Proceedings of the IEEE",
1507 title = "Thin film deposition and microelectronic and
1508 optoelectronic device fabrication and characterization
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1518 device fabrication;solid-state devices;surface
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1525 doi = "10.1109/5.90132",
1527 notes = "sic growth methods",
1531 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1532 Lin and B. Sverdlov and M. Burns",
1534 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1535 ZnSe-based semiconductor device technologies",
1538 journal = "J. Appl. Phys.",
1541 pages = "1363--1398",
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1548 notes = "sic intro, properties",
1552 author = "Noch Unbekannt",
1553 title = "How to find references",
1554 journal = "Journal of Applied References",
1561 title = "Atomistic simulation of thermomechanical properties of
1563 author = "Meijie Tang and Sidney Yip",
1564 journal = "Phys. Rev. B",
1567 pages = "15150--15159",
1570 doi = "10.1103/PhysRevB.52.15150",
1571 notes = "modified tersoff, scale cutoff with volume, promising
1572 tersoff reparametrization",
1573 publisher = "American Physical Society",
1577 title = "Silicon carbide as a new {MEMS} technology",
1578 journal = "Sensors and Actuators A: Physical",
1584 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1585 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1586 author = "Pasqualina M. Sarro",
1588 keywords = "Silicon carbide",
1589 keywords = "Micromachining",
1590 keywords = "Mechanical stress",
1594 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1595 semiconductor for high-temperature applications: {A}
1597 journal = "Solid-State Electronics",
1600 pages = "1409--1422",
1603 doi = "DOI: 10.1016/0038-1101(96)00045-7",
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1605 author = "J. B. Casady and R. W. Johnson",
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1609 @Article{giancarli98,
1610 title = "Design requirements for Si{C}/Si{C} composites
1611 structural material in fusion power reactor blankets",
1612 journal = "Fusion Engineering and Design",
1618 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
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1620 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1621 Marois and N. B. Morley and J. F. Salavy",
1625 title = "Electrical and optical characterization of Si{C}",
1626 journal = "Physica B: Condensed Matter",
1632 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1633 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1634 author = "G. Pensl and W. J. Choyke",
1638 title = "Investigation of growth processes of ingots of silicon
1639 carbide single crystals",
1640 journal = "J. Cryst. Growth",
1645 notes = "modified lely process",
1647 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1648 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1649 author = "Yu. M. Tairov and V. F. Tsvetkov",
1653 title = "General principles of growing large-size single
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1655 journal = "Journal of Crystal Growth",
1662 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1663 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1664 author = "Yu.M. Tairov and V. F. Tsvetkov",
1668 title = "Si{C} boule growth by sublimation vapor transport",
1669 journal = "Journal of Crystal Growth",
1676 doi = "DOI: 10.1016/0022-0248(91)90152-U",
1677 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
1678 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
1679 R. H. Hopkins and W. J. Choyke",
1683 title = "Growth of large Si{C} single crystals",
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1691 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
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1694 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1699 title = "Control of polytype formation by surface energy
1700 effects during the growth of Si{C} monocrystals by the
1701 sublimation method",
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1709 doi = "DOI: 10.1016/0022-0248(93)90397-F",
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1716 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1719 title = "Production of large-area single-crystal wafers of
1720 cubic Si{C} for semiconductor devices",
1723 journal = "Appl. Phys. Lett.",
1727 keywords = "silicon carbides; layers; chemical vapor deposition;
1729 URL = "http://link.aip.org/link/?APL/42/460/1",
1730 doi = "10.1063/1.93970",
1731 notes = "cvd of 3c-sic on si, sic buffer layer",
1735 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1736 and Hiroyuki Matsunami",
1738 title = "Epitaxial growth and electric characteristics of cubic
1742 journal = "J. Appl. Phys.",
1745 pages = "4889--4893",
1746 URL = "http://link.aip.org/link/?JAP/61/4889/1",
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1748 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1753 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1755 title = "Growth and Characterization of Cubic Si{C}
1756 Single-Crystal Films on Si",
1759 journal = "Journal of The Electrochemical Society",
1762 pages = "1558--1565",
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1774 title = "Improved beta-Si{C} heteroepitaxial films using
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1788 doi = "10.1063/1.98824",
1789 notes = "improved sic on off-axis si substrates, reduced apbs",
1793 title = "Crystal growth of Si{C} by step-controlled epitaxy",
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1802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
1803 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
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1809 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1811 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
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1822 URL = "http://link.aip.org/link/?JAP/73/726/1",
1823 doi = "10.1063/1.353329",
1824 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
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1829 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1830 Yoganathan and J. Yang and P. Pirouz",
1832 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
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1836 journal = "Applied Physics Letters",
1839 pages = "1442--1444",
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1850 author = "H. S. Kong and J. T. Glass and R. F. Davis",
1852 title = "Chemical vapor deposition and characterization of
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1872 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1873 Yoganathan and J. Yang and P. Pirouz",
1875 title = "Growth of improved quality 3{C}-Si{C} films on
1876 6{H}-Si{C} substrates",
1879 journal = "Appl. Phys. Lett.",
1882 pages = "1353--1355",
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1894 Rozgonyi and K. L. More",
1896 title = "An examination of double positioning boundaries and
1897 interface misfit in beta-Si{C} films on alpha-Si{C}
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1906 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1907 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1908 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1909 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1910 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1911 doi = "10.1063/1.341004",
1915 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1916 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1917 and W. J. Choyke and L. Clemen and M. Yoganathan",
1919 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1920 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1923 journal = "Applied Physics Letters",
1927 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1928 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1929 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1930 URL = "http://link.aip.org/link/?APL/59/333/1",
1931 doi = "10.1063/1.105587",
1935 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1936 Thokala and M. J. Loboda",
1938 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1939 films on 6{H}-Si{C} by chemical vapor deposition from
1943 journal = "J. Appl. Phys.",
1946 pages = "1271--1273",
1947 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1948 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1950 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1951 doi = "10.1063/1.360368",
1952 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1956 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1957 [alpha]-Si{C}(0001) at low temperatures by solid-source
1958 molecular beam epitaxy",
1959 journal = "J. Cryst. Growth",
1965 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1966 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1967 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1968 Schr{\"{o}}ter and W. Richter",
1969 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1972 @Article{fissel95_apl,
1973 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1975 title = "Low-temperature growth of Si{C} thin films on Si and
1976 6{H}--Si{C} by solid-source molecular beam epitaxy",
1979 journal = "Appl. Phys. Lett.",
1982 pages = "3182--3184",
1983 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1985 URL = "http://link.aip.org/link/?APL/66/3182/1",
1986 doi = "10.1063/1.113716",
1987 notes = "mbe 3c-sic on si and 6h-sic",
1991 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
1992 Bernd Schr{\"{o}}ter and Wolfgang Richter",
1994 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
1995 migration enhanced epitaxy controlled to an atomic
1996 level using surface superstructures",
1999 journal = "Applied Physics Letters",
2002 pages = "1204--1206",
2003 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2004 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2006 URL = "http://link.aip.org/link/?APL/68/1204/1",
2007 doi = "10.1063/1.115969",
2008 notes = "ss mbe sic, superstructure, reconstruction",
2012 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2013 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2014 C. M. Bertoni and A. Catellani",
2015 journal = "Phys. Rev. Lett.",
2022 doi = "10.1103/PhysRevLett.91.136101",
2023 publisher = "American Physical Society",
2024 notes = "dft calculations mbe sic growth",
2028 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2030 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2034 journal = "Appl. Phys. Lett.",
2038 URL = "http://link.aip.org/link/?APL/18/509/1",
2039 doi = "10.1063/1.1653516",
2040 notes = "first time sic by ibs, follow cites for precipitation
2045 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2046 J. Davis and G. E. Celler",
2048 title = "Formation of buried layers of beta-Si{C} using ion
2049 beam synthesis and incoherent lamp annealing",
2052 journal = "Appl. Phys. Lett.",
2055 pages = "2242--2244",
2056 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2057 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2058 URL = "http://link.aip.org/link/?APL/51/2242/1",
2059 doi = "10.1063/1.98953",
2060 notes = "nice tem images, sic by ibs",
2064 author = "R. I. Scace and G. A. Slack",
2066 title = "Solubility of Carbon in Silicon and Germanium",
2069 journal = "J. Chem. Phys.",
2072 pages = "1551--1555",
2073 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2074 doi = "10.1063/1.1730236",
2075 notes = "solubility of c in c-si, si-c phase diagram",
2079 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2080 F. W. Saris and W. Vandervorst",
2082 title = "Role of {C} and {B} clusters in transient diffusion of
2086 journal = "Appl. Phys. Lett.",
2089 pages = "1150--1152",
2090 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2091 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2093 URL = "http://link.aip.org/link/?APL/68/1150/1",
2094 doi = "10.1063/1.115706",
2095 notes = "suppression of transient enhanced diffusion (ted)",
2099 title = "Implantation and transient boron diffusion: the role
2100 of the silicon self-interstitial",
2101 journal = "Nucl. Instrum. Methods Phys. Res. B",
2106 note = "Selected Papers of the Tenth International Conference
2107 on Ion Implantation Technology (IIT '94)",
2109 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2110 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2111 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2116 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2117 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2118 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2121 title = "Physical mechanisms of transient enhanced dopant
2122 diffusion in ion-implanted silicon",
2125 journal = "J. Appl. Phys.",
2128 pages = "6031--6050",
2129 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2130 doi = "10.1063/1.364452",
2131 notes = "ted, transient enhanced diffusion, c silicon trap",
2135 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2137 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2138 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2141 journal = "Appl. Phys. Lett.",
2145 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2146 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2147 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2149 URL = "http://link.aip.org/link/?APL/64/324/1",
2150 doi = "10.1063/1.111195",
2151 notes = "beta sic nano crystals in si, mbe, annealing",
2155 author = "Richard A. Soref",
2157 title = "Optical band gap of the ternary semiconductor Si[sub 1
2158 - x - y]Ge[sub x]{C}[sub y]",
2161 journal = "J. Appl. Phys.",
2164 pages = "2470--2472",
2165 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2166 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2168 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2169 doi = "10.1063/1.349403",
2170 notes = "band gap of strained si by c",
2174 author = "E Kasper",
2175 title = "Superlattices of group {IV} elements, a new
2176 possibility to produce direct band gap material",
2177 journal = "Physica Scripta",
2180 URL = "http://stacks.iop.org/1402-4896/T35/232",
2182 notes = "superlattices, convert indirect band gap into a
2187 author = "H. J. Osten and J. Griesche and S. Scalese",
2189 title = "Substitutional carbon incorporation in epitaxial
2190 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2191 molecular beam epitaxy",
2194 journal = "Appl. Phys. Lett.",
2198 keywords = "molecular beam epitaxial growth; semiconductor growth;
2199 wide band gap semiconductors; interstitials; silicon
2201 URL = "http://link.aip.org/link/?APL/74/836/1",
2202 doi = "10.1063/1.123384",
2203 notes = "substitutional c in si",
2206 @Article{hohenberg64,
2207 title = "Inhomogeneous Electron Gas",
2208 author = "P. Hohenberg and W. Kohn",
2209 journal = "Phys. Rev.",
2212 pages = "B864--B871",
2216 doi = "10.1103/PhysRev.136.B864",
2217 publisher = "American Physical Society",
2218 notes = "density functional theory, dft",
2222 title = "Self-Consistent Equations Including Exchange and
2223 Correlation Effects",
2224 author = "W. Kohn and L. J. Sham",
2225 journal = "Phys. Rev.",
2228 pages = "A1133--A1138",
2232 doi = "10.1103/PhysRev.140.A1133",
2233 publisher = "American Physical Society",
2234 notes = "dft, exchange and correlation",
2238 title = "Strain-stabilized highly concentrated pseudomorphic
2239 $Si1-x$$Cx$ layers in Si",
2240 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2242 journal = "Phys. Rev. Lett.",
2245 pages = "3578--3581",
2249 doi = "10.1103/PhysRevLett.72.3578",
2250 publisher = "American Physical Society",
2251 notes = "high c concentration in si, heterostructure, strained
2256 title = "Electron Transport Model for Strained Silicon-Carbon
2258 author = "Shu-Tong Chang and Chung-Yi Lin",
2259 journal = "Japanese J. Appl. Phys.",
2262 pages = "2257--2262",
2265 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2266 doi = "10.1143/JJAP.44.2257",
2267 publisher = "The Japan Society of Applied Physics",
2268 notes = "enhance of electron mobility in starined si",
2272 author = "H. J. Osten and P. Gaworzewski",
2274 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2275 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2279 journal = "J. Appl. Phys.",
2282 pages = "4977--4981",
2283 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2284 semiconductors; semiconductor epitaxial layers; carrier
2285 density; Hall mobility; interstitials; defect states",
2286 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2287 doi = "10.1063/1.366364",
2288 notes = "charge transport in strained si",
2292 title = "Carbon-mediated aggregation of self-interstitials in
2293 silicon: {A} large-scale molecular dynamics study",
2294 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2295 journal = "Phys. Rev. B",
2302 doi = "10.1103/PhysRevB.69.155214",
2303 publisher = "American Physical Society",
2304 notes = "simulation using promising tersoff reparametrization",
2308 title = "Event-Based Relaxation of Continuous Disordered
2310 author = "G. T. Barkema and Normand Mousseau",
2311 journal = "Phys. Rev. Lett.",
2314 pages = "4358--4361",
2318 doi = "10.1103/PhysRevLett.77.4358",
2319 publisher = "American Physical Society",
2320 notes = "activation relaxation technique, art, speed up slow
2325 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2326 Minoukadeh and F. Willaime",
2328 title = "Some improvements of the activation-relaxation
2329 technique method for finding transition pathways on
2330 potential energy surfaces",
2333 journal = "J. Chem. Phys.",
2339 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2340 surfaces; vacancies (crystal)",
2341 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2342 doi = "10.1063/1.3088532",
2343 notes = "improvements to art, refs for methods to find
2344 transition pathways",
2347 @Article{parrinello81,
2348 author = "M. Parrinello and A. Rahman",
2350 title = "Polymorphic transitions in single crystals: {A} new
2351 molecular dynamics method",
2354 journal = "J. Appl. Phys.",
2357 pages = "7182--7190",
2358 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2359 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2360 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2361 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2362 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2364 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2365 doi = "10.1063/1.328693",
2368 @Article{stillinger85,
2369 title = "Computer simulation of local order in condensed phases
2371 author = "Frank H. Stillinger and Thomas A. Weber",
2372 journal = "Phys. Rev. B",
2375 pages = "5262--5271",
2379 doi = "10.1103/PhysRevB.31.5262",
2380 publisher = "American Physical Society",
2384 title = "Empirical potential for hydrocarbons for use in
2385 simulating the chemical vapor deposition of diamond
2387 author = "Donald W. Brenner",
2388 journal = "Phys. Rev. B",
2391 pages = "9458--9471",
2395 doi = "10.1103/PhysRevB.42.9458",
2396 publisher = "American Physical Society",
2397 notes = "brenner hydro carbons",
2401 title = "Modeling of Covalent Bonding in Solids by Inversion of
2402 Cohesive Energy Curves",
2403 author = "Martin Z. Bazant and Efthimios Kaxiras",
2404 journal = "Phys. Rev. Lett.",
2407 pages = "4370--4373",
2411 doi = "10.1103/PhysRevLett.77.4370",
2412 publisher = "American Physical Society",
2413 notes = "first si edip",
2417 title = "Environment-dependent interatomic potential for bulk
2419 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2421 journal = "Phys. Rev. B",
2424 pages = "8542--8552",
2428 doi = "10.1103/PhysRevB.56.8542",
2429 publisher = "American Physical Society",
2430 notes = "second si edip",
2434 title = "Interatomic potential for silicon defects and
2436 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2437 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2438 journal = "Phys. Rev. B",
2441 pages = "2539--2550",
2445 doi = "10.1103/PhysRevB.58.2539",
2446 publisher = "American Physical Society",
2447 notes = "latest si edip, good dislocation explanation",
2451 title = "{PARCAS} molecular dynamics code",
2452 author = "K. Nordlund",
2457 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2459 author = "Arthur F. Voter",
2460 journal = "Phys. Rev. Lett.",
2463 pages = "3908--3911",
2467 doi = "10.1103/PhysRevLett.78.3908",
2468 publisher = "American Physical Society",
2469 notes = "hyperdynamics, accelerated md",
2473 author = "Arthur F. Voter",
2475 title = "A method for accelerating the molecular dynamics
2476 simulation of infrequent events",
2479 journal = "J. Chem. Phys.",
2482 pages = "4665--4677",
2483 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2484 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2485 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2486 energy functions; surface diffusion; reaction kinetics
2487 theory; potential energy surfaces",
2488 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2489 doi = "10.1063/1.473503",
2490 notes = "improved hyperdynamics md",
2493 @Article{sorensen2000,
2494 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2496 title = "Temperature-accelerated dynamics for simulation of
2500 journal = "J. Chem. Phys.",
2503 pages = "9599--9606",
2504 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2505 MOLECULAR DYNAMICS METHOD; surface diffusion",
2506 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2507 doi = "10.1063/1.481576",
2508 notes = "temperature accelerated dynamics, tad",
2512 title = "Parallel replica method for dynamics of infrequent
2514 author = "Arthur F. Voter",
2515 journal = "Phys. Rev. B",
2518 pages = "R13985--R13988",
2522 doi = "10.1103/PhysRevB.57.R13985",
2523 publisher = "American Physical Society",
2524 notes = "parallel replica method, accelerated md",
2528 author = "Xiongwu Wu and Shaomeng Wang",
2530 title = "Enhancing systematic motion in molecular dynamics
2534 journal = "J. Chem. Phys.",
2537 pages = "9401--9410",
2538 keywords = "molecular dynamics method; argon; Lennard-Jones
2539 potential; crystallisation; liquid theory",
2540 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2541 doi = "10.1063/1.478948",
2542 notes = "self guided md, sgmd, accelerated md, enhancing
2546 @Article{choudhary05,
2547 author = "Devashish Choudhary and Paulette Clancy",
2549 title = "Application of accelerated molecular dynamics schemes
2550 to the production of amorphous silicon",
2553 journal = "J. Chem. Phys.",
2559 keywords = "molecular dynamics method; silicon; glass structure;
2560 amorphous semiconductors",
2561 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2562 doi = "10.1063/1.1878733",
2563 notes = "explanation of sgmd and hyper md, applied to amorphous
2568 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2570 title = "Carbon precipitation in silicon: Why is it so
2574 journal = "Appl. Phys. Lett.",
2577 pages = "3336--3338",
2578 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2579 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2581 URL = "http://link.aip.org/link/?APL/62/3336/1",
2582 doi = "10.1063/1.109063",
2583 notes = "interfacial energy of cubic sic and si",
2586 @Article{chaussende08,
2587 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2588 journal = "J. Cryst. Growth",
2593 note = "Proceedings of the E-MRS Conference, Symposium G -
2594 Substrates of Wide Bandgap Materials",
2596 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2597 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2598 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2599 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2600 and A. Andreadou and E. K. Polychroniadis and C.
2601 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2602 notes = "3c-sic crystal growth, sic fabrication + links,
2606 @Article{chaussende07,
2607 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2608 title = "Status of Si{C} bulk growth processes",
2609 journal = "Journal of Physics D: Applied Physics",
2613 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2615 notes = "review of sic single crystal growth methods, process
2620 title = "Forces in Molecules",
2621 author = "R. P. Feynman",
2622 journal = "Phys. Rev.",
2629 doi = "10.1103/PhysRev.56.340",
2630 publisher = "American Physical Society",
2631 notes = "hellmann feynman forces",
2635 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2636 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2637 their Contrasting Properties",
2638 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2640 journal = "Phys. Rev. Lett.",
2647 doi = "10.1103/PhysRevLett.84.943",
2648 publisher = "American Physical Society",
2649 notes = "si sio2 and sic sio2 interface",
2652 @Article{djurabekova08,
2653 title = "Atomistic simulation of the interface structure of Si
2654 nanocrystals embedded in amorphous silica",
2655 author = "Flyura Djurabekova and Kai Nordlund",
2656 journal = "Phys. Rev. B",
2663 doi = "10.1103/PhysRevB.77.115325",
2664 publisher = "American Physical Society",
2665 notes = "nc-si in sio2, interface energy, nc construction,
2666 angular distribution, coordination",
2670 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2671 W. Liang and J. Zou",
2673 title = "Nature of interfacial defects and their roles in
2674 strain relaxation at highly lattice mismatched
2675 3{C}-Si{C}/Si (001) interface",
2678 journal = "J. Appl. Phys.",
2684 keywords = "anelastic relaxation; crystal structure; dislocations;
2685 elemental semiconductors; semiconductor growth;
2686 semiconductor thin films; silicon; silicon compounds;
2687 stacking faults; wide band gap semiconductors",
2688 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2689 doi = "10.1063/1.3234380",
2690 notes = "sic/si interface, follow refs, tem image
2691 deconvolution, dislocation defects",
2694 @Article{kitabatake93,
2695 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2698 title = "Simulations and experiments of Si{C} heteroepitaxial
2699 growth on Si(001) surface",
2702 journal = "J. Appl. Phys.",
2705 pages = "4438--4445",
2706 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2707 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2708 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2709 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2710 doi = "10.1063/1.354385",
2711 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2715 @Article{kitabatake97,
2716 author = "Makoto Kitabatake",
2717 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2718 Heteroepitaxial Growth",
2719 publisher = "WILEY-VCH Verlag",
2721 journal = "physica status solidi (b)",
2724 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2725 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2726 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2730 title = "Strain relaxation and thermal stability of the
2731 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2733 journal = "Thin Solid Films",
2740 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2741 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2742 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2743 keywords = "Strain relaxation",
2744 keywords = "Interfaces",
2745 keywords = "Thermal stability",
2746 keywords = "Molecular dynamics",
2747 notes = "tersoff sic/si interface study",
2751 title = "Ab initio Study of Misfit Dislocations at the
2752 $Si{C}/Si(001)$ Interface",
2753 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2755 journal = "Phys. Rev. Lett.",
2762 doi = "10.1103/PhysRevLett.89.156101",
2763 publisher = "American Physical Society",
2764 notes = "sic/si interface study",
2767 @Article{pizzagalli03,
2768 title = "Theoretical investigations of a highly mismatched
2769 interface: Si{C}/Si(001)",
2770 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2772 journal = "Phys. Rev. B",
2779 doi = "10.1103/PhysRevB.68.195302",
2780 publisher = "American Physical Society",
2781 notes = "tersoff md and ab initio sic/si interface study",
2785 title = "Atomic configurations of dislocation core and twin
2786 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2787 electron microscopy",
2788 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2789 H. Zheng and J. W. Liang",
2790 journal = "Phys. Rev. B",
2797 doi = "10.1103/PhysRevB.75.184103",
2798 publisher = "American Physical Society",
2799 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2803 @Article{hornstra58,
2804 title = "Dislocations in the diamond lattice",
2805 journal = "Journal of Physics and Chemistry of Solids",
2812 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2813 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2814 author = "J. Hornstra",
2815 notes = "dislocations in diamond lattice",
2819 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2820 Ion `Hot' Implantation",
2821 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2822 Hirao and Naoki Arai and Tomio Izumi",
2823 journal = "Japanese Journal of Applied Physics",
2825 number = "Part 1, No. 2A",
2829 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2830 doi = "10.1143/JJAP.31.343",
2831 publisher = "The Japan Society of Applied Physics",
2832 notes = "c-c bonds in c implanted si, hot implantation
2833 efficiency, c-c hard to break by thermal annealing",
2836 @Article{eichhorn99,
2837 author = "F. Eichhorn and N. Schell and W. Matz and R.
2840 title = "Strain and Si{C} particle formation in silicon
2841 implanted with carbon ions of medium fluence studied by
2842 synchrotron x-ray diffraction",
2845 journal = "J. Appl. Phys.",
2848 pages = "4184--4187",
2849 keywords = "silicon; carbon; elemental semiconductors; chemical
2850 interdiffusion; ion implantation; X-ray diffraction;
2851 precipitation; semiconductor doping",
2852 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2853 doi = "10.1063/1.371344",
2854 notes = "sic conversion by ibs, detected substitutional carbon,
2855 expansion of si lattice",
2858 @Article{eichhorn02,
2859 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2860 Metzger and W. Matz and R. K{\"{o}}gler",
2862 title = "Structural relation between Si and Si{C} formed by
2863 carbon ion implantation",
2866 journal = "J. Appl. Phys.",
2869 pages = "1287--1292",
2870 keywords = "silicon compounds; wide band gap semiconductors; ion
2871 implantation; annealing; X-ray scattering; transmission
2872 electron microscopy",
2873 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2874 doi = "10.1063/1.1428105",
2875 notes = "3c-sic alignement to si host in ibs depending on
2876 temperature, might explain c into c sub trafo",
2880 author = "G Lucas and M Bertolus and L Pizzagalli",
2881 title = "An environment-dependent interatomic potential for
2882 silicon carbide: calculation of bulk properties,
2883 high-pressure phases, point and extended defects, and
2884 amorphous structures",
2885 journal = "J. Phys.: Condens. Matter",
2889 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2895 author = "J Godet and L Pizzagalli and S Brochard and P
2897 title = "Comparison between classical potentials and ab initio
2898 methods for silicon under large shear",
2899 journal = "J. Phys.: Condens. Matter",
2903 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2905 notes = "comparison of empirical potentials, stillinger weber,
2906 edip, tersoff, ab initio",
2909 @Article{moriguchi98,
2910 title = "Verification of Tersoff's Potential for Static
2911 Structural Analysis of Solids of Group-{IV} Elements",
2912 author = "Koji Moriguchi and Akira Shintani",
2913 journal = "Japanese J. Appl. Phys.",
2915 number = "Part 1, No. 2",
2919 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2920 doi = "10.1143/JJAP.37.414",
2921 publisher = "The Japan Society of Applied Physics",
2922 notes = "tersoff stringent test",
2925 @Article{mazzarolo01,
2926 title = "Low-energy recoils in crystalline silicon: Quantum
2928 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2929 Lulli and Eros Albertazzi",
2930 journal = "Phys. Rev. B",
2937 doi = "10.1103/PhysRevB.63.195207",
2938 publisher = "American Physical Society",
2941 @Article{holmstroem08,
2942 title = "Threshold defect production in silicon determined by
2943 density functional theory molecular dynamics
2945 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2946 journal = "Phys. Rev. B",
2953 doi = "10.1103/PhysRevB.78.045202",
2954 publisher = "American Physical Society",
2955 notes = "threshold displacement comparison empirical and ab
2959 @Article{nordlund97,
2960 title = "Repulsive interatomic potentials calculated using
2961 Hartree-Fock and density-functional theory methods",
2962 journal = "Nucl. Instrum. Methods Phys. Res. B",
2969 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2970 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2971 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2972 notes = "repulsive ab initio potential",
2976 title = "Efficiency of ab-initio total energy calculations for
2977 metals and semiconductors using a plane-wave basis
2979 journal = "Comput. Mater. Sci.",
2986 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2987 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2988 author = "G. Kresse and J. Furthm{\"{u}}ller",
2993 title = "Projector augmented-wave method",
2994 author = "P. E. Bl{\"o}chl",
2995 journal = "Phys. Rev. B",
2998 pages = "17953--17979",
3002 doi = "10.1103/PhysRevB.50.17953",
3003 publisher = "American Physical Society",
3004 notes = "paw method",
3008 title = "Norm-Conserving Pseudopotentials",
3009 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3010 journal = "Phys. Rev. Lett.",
3013 pages = "1494--1497",
3017 doi = "10.1103/PhysRevLett.43.1494",
3018 publisher = "American Physical Society",
3019 notes = "norm-conserving pseudopotentials",
3022 @Article{vanderbilt90,
3023 title = "Soft self-consistent pseudopotentials in a generalized
3024 eigenvalue formalism",
3025 author = "David Vanderbilt",
3026 journal = "Phys. Rev. B",
3029 pages = "7892--7895",
3033 doi = "10.1103/PhysRevB.41.7892",
3034 publisher = "American Physical Society",
3035 notes = "vasp pseudopotentials",
3039 title = "Accurate and simple density functional for the
3040 electronic exchange energy: Generalized gradient
3042 author = "John P. Perdew and Yue Wang",
3043 journal = "Phys. Rev. B",
3046 pages = "8800--8802",
3050 doi = "10.1103/PhysRevB.33.8800",
3051 publisher = "American Physical Society",
3052 notes = "rapid communication gga",
3056 title = "Generalized gradient approximations for exchange and
3057 correlation: {A} look backward and forward",
3058 journal = "Physica B: Condensed Matter",
3065 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3066 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3067 author = "John P. Perdew",
3068 notes = "gga overview",
3072 title = "Atoms, molecules, solids, and surfaces: Applications
3073 of the generalized gradient approximation for exchange
3075 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3076 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3077 and Carlos Fiolhais",
3078 journal = "Phys. Rev. B",
3081 pages = "6671--6687",
3085 doi = "10.1103/PhysRevB.46.6671",
3086 publisher = "American Physical Society",
3087 notes = "gga pw91 (as in vasp)",
3090 @Article{baldereschi73,
3091 title = "Mean-Value Point in the Brillouin Zone",
3092 author = "A. Baldereschi",
3093 journal = "Phys. Rev. B",
3096 pages = "5212--5215",
3100 doi = "10.1103/PhysRevB.7.5212",
3101 publisher = "American Physical Society",
3102 notes = "mean value k point",
3106 title = "Ab initio pseudopotential calculations of dopant
3108 journal = "Comput. Mater. Sci.",
3115 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3116 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3117 author = "Jing Zhu",
3118 keywords = "TED (transient enhanced diffusion)",
3119 keywords = "Boron dopant",
3120 keywords = "Carbon dopant",
3121 keywords = "Defect",
3122 keywords = "ab initio pseudopotential method",
3123 keywords = "Impurity cluster",
3124 notes = "binding of c to si interstitial, c in si defects",
3128 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3130 title = "Si{C} buried layer formation by ion beam synthesis at
3134 journal = "Appl. Phys. Lett.",
3137 pages = "2646--2648",
3138 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3139 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3140 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3141 ELECTRON MICROSCOPY",
3142 URL = "http://link.aip.org/link/?APL/66/2646/1",
3143 doi = "10.1063/1.113112",
3144 notes = "precipitation mechanism by substitutional carbon, si
3145 self interstitials react with further implanted c",
3149 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3150 Kolodzey and A. Hairie",
3152 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3156 journal = "J. Appl. Phys.",
3159 pages = "4631--4633",
3160 keywords = "silicon compounds; precipitation; localised modes;
3161 semiconductor epitaxial layers; infrared spectra;
3162 Fourier transform spectra; thermal stability;
3164 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3165 doi = "10.1063/1.368703",
3166 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3170 author = "R Jones and B J Coomer and P R Briddon",
3171 title = "Quantum mechanical modelling of defects in
3173 journal = "J. Phys.: Condens. Matter",
3177 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3179 notes = "ab inito init, vibrational modes, c defect in si",
3183 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3184 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3185 J. E. Greene and S. G. Bishop",
3187 title = "Carbon incorporation pathways and lattice sites in
3188 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3189 molecular-beam epitaxy",
3192 journal = "J. Appl. Phys.",
3195 pages = "5716--5727",
3196 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3197 doi = "10.1063/1.1465122",
3198 notes = "c substitutional incorporation pathway, dft and expt",
3202 title = "Dynamic properties of interstitial carbon and
3203 carbon-carbon pair defects in silicon",
3204 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3206 journal = "Phys. Rev. B",
3209 pages = "2188--2194",
3213 doi = "10.1103/PhysRevB.55.2188",
3214 publisher = "American Physical Society",
3215 notes = "ab initio c in si and di-carbon defect, no formation
3216 energies, different migration barriers and paths",
3220 title = "Interstitial carbon and the carbon-carbon pair in
3221 silicon: Semiempirical electronic-structure
3223 author = "Matthew J. Burnard and Gary G. DeLeo",
3224 journal = "Phys. Rev. B",
3227 pages = "10217--10225",
3231 doi = "10.1103/PhysRevB.47.10217",
3232 publisher = "American Physical Society",
3233 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3234 carbon defect, formation energies",
3238 title = "Electronic structure of interstitial carbon in
3240 author = "Morgan Besson and Gary G. DeLeo",
3241 journal = "Phys. Rev. B",
3244 pages = "4028--4033",
3248 doi = "10.1103/PhysRevB.43.4028",
3249 publisher = "American Physical Society",
3253 title = "Review of atomistic simulations of surface diffusion
3254 and growth on semiconductors",
3255 journal = "Comput. Mater. Sci.",
3260 note = "Proceedings of the Workshop on Virtual Molecular Beam
3263 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3264 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3265 author = "Efthimios Kaxiras",
3266 notes = "might contain c 100 db formation energy, overview md,
3267 tight binding, first principles",
3270 @Article{kaukonen98,
3271 title = "Effect of {N} and {B} doping on the growth of {CVD}
3273 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3275 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3276 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3278 journal = "Phys. Rev. B",
3281 pages = "9965--9970",
3285 doi = "10.1103/PhysRevB.57.9965",
3286 publisher = "American Physical Society",
3287 notes = "constrained conjugate gradient relaxation technique
3292 title = "Correlation between the antisite pair and the ${DI}$
3294 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3295 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3297 journal = "Phys. Rev. B",
3304 doi = "10.1103/PhysRevB.67.155203",
3305 publisher = "American Physical Society",
3309 title = "Production and recovery of defects in Si{C} after
3310 irradiation and deformation",
3311 journal = "J. Nucl. Mater.",
3314 pages = "1803--1808",
3318 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3319 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3320 author = "J. Chen and P. Jung and H. Klein",
3324 title = "Accumulation, dynamic annealing and thermal recovery
3325 of ion-beam-induced disorder in silicon carbide",
3326 journal = "Nucl. Instrum. Methods Phys. Res. B",
3333 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3334 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3335 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3338 @Article{bockstedte03,
3339 title = "Ab initio study of the migration of intrinsic defects
3341 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3343 journal = "Phys. Rev. B",
3350 doi = "10.1103/PhysRevB.68.205201",
3351 publisher = "American Physical Society",
3352 notes = "defect migration in sic",
3356 title = "Theoretical study of vacancy diffusion and
3357 vacancy-assisted clustering of antisites in Si{C}",
3358 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3360 journal = "Phys. Rev. B",
3367 doi = "10.1103/PhysRevB.68.155208",
3368 publisher = "American Physical Society",
3372 journal = "Telegrafiya i Telefoniya bez Provodov",
3376 author = "O. V. Lossev",
3380 title = "Luminous carborundum detector and detection effect and
3381 oscillations with crystals",
3382 journal = "Philosophical Magazine Series 7",
3385 pages = "1024--1044",
3387 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3388 author = "O. V. Lossev",
3392 journal = "Physik. Zeitschr.",
3396 author = "O. V. Lossev",
3400 journal = "Physik. Zeitschr.",
3404 author = "O. V. Lossev",
3408 journal = "Physik. Zeitschr.",
3412 author = "O. V. Lossev",
3416 title = "A note on carborundum",
3417 journal = "Electrical World",
3421 author = "H. J. Round",
3424 @Article{vashishath08,
3425 title = "Recent trends in silicon carbide device research",
3426 journal = "Mj. Int. J. Sci. Tech.",
3431 author = "Munish Vashishath and Ashoke K. Chatterjee",
3432 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3433 notes = "sic polytype electronic properties",
3437 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3439 title = "Growth and Properties of beta-Si{C} Single Crystals",
3442 journal = "Journal of Applied Physics",
3446 URL = "http://link.aip.org/link/?JAP/37/333/1",
3447 doi = "10.1063/1.1707837",
3448 notes = "sic melt growth",
3452 author = "A. E. van Arkel and J. H. de Boer",
3453 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3455 publisher = "WILEY-VCH Verlag GmbH",
3457 journal = "Z. Anorg. Chem.",
3460 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3461 doi = "10.1002/zaac.19251480133",
3462 notes = "van arkel apparatus",
3466 author = "K. Moers",
3468 journal = "Z. Anorg. Chem.",
3471 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3476 author = "J. T. Kendall",
3477 title = "Electronic Conduction in Silicon Carbide",
3480 journal = "The Journal of Chemical Physics",
3484 URL = "http://link.aip.org/link/?JCP/21/821/1",
3485 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3490 author = "J. A. Lely",
3492 journal = "Ber. Deut. Keram. Ges.",
3495 notes = "lely sublimation growth process",
3498 @Article{knippenberg63,
3499 author = "W. F. Knippenberg",
3501 journal = "Philips Res. Repts.",
3504 notes = "acheson process",
3507 @Article{hoffmann82,
3508 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3511 title = "Silicon carbide blue light emitting diodes with
3512 improved external quantum efficiency",
3515 journal = "Journal of Applied Physics",
3518 pages = "6962--6967",
3519 keywords = "light emitting diodes; silicon carbides; quantum
3520 efficiency; visible radiation; experimental data;
3521 epitaxy; fabrication; medium temperature; layers;
3522 aluminium; nitrogen; substrates; pn junctions;
3523 electroluminescence; spectra; current density;
3525 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3526 doi = "10.1063/1.330041",
3527 notes = "blue led, sublimation process",
3531 author = "Philip Neudeck",
3532 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3533 Road 44135 Cleveland OH",
3534 title = "Progress in silicon carbide semiconductor electronics
3536 journal = "Journal of Electronic Materials",
3537 publisher = "Springer Boston",
3539 keyword = "Chemistry and Materials Science",
3543 URL = "http://dx.doi.org/10.1007/BF02659688",
3544 note = "10.1007/BF02659688",
3546 notes = "sic data, advantages of 3c sic",
3549 @Article{bhatnagar93,
3550 author = "M. Bhatnagar and B. J. Baliga",
3551 journal = "Electron Devices, IEEE Transactions on",
3552 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3559 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3560 rectifiers;Si;SiC;breakdown voltages;drift region
3561 properties;output characteristics;power MOSFETs;power
3562 semiconductor devices;switching characteristics;thermal
3563 analysis;Schottky-barrier diodes;electric breakdown of
3564 solids;insulated gate field effect transistors;power
3565 transistors;semiconductor materials;silicon;silicon
3566 compounds;solid-state rectifiers;thermal analysis;",
3567 doi = "10.1109/16.199372",
3569 notes = "comparison 3c 6h sic and si devices",
3573 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3574 A. Powell and C. S. Salupo and L. G. Matus",
3575 journal = "Electron Devices, IEEE Transactions on",
3576 title = "Electrical properties of epitaxial 3{C}- and
3577 6{H}-Si{C} p-n junction diodes produced side-by-side on
3578 6{H}-Si{C} substrates",
3584 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3585 C;6H-SiC layers;6H-SiC substrates;CVD
3586 process;SiC;chemical vapor deposition;doping;electrical
3587 properties;epitaxial layers;light
3588 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3589 diodes;polytype;rectification characteristics;reverse
3590 leakage current;reverse voltages;temperature;leakage
3591 currents;power electronics;semiconductor
3592 diodes;semiconductor epitaxial layers;semiconductor
3593 growth;semiconductor materials;silicon
3594 compounds;solid-state rectifiers;substrates;vapour
3595 phase epitaxial growth;",
3596 doi = "10.1109/16.285038",
3598 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3603 author = "N. Schulze and D. L. Barrett and G. Pensl",
3605 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3606 single crystals by physical vapor transport",
3609 journal = "Applied Physics Letters",
3612 pages = "1632--1634",
3613 keywords = "silicon compounds; semiconductor materials;
3614 semiconductor growth; crystal growth from vapour;
3615 photoluminescence; Hall mobility",
3616 URL = "http://link.aip.org/link/?APL/72/1632/1",
3617 doi = "10.1063/1.121136",
3618 notes = "micropipe free 6h-sic pvt growth",
3622 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3624 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3627 journal = "Applied Physics Letters",
3631 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3632 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3633 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3634 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3636 URL = "http://link.aip.org/link/?APL/50/221/1",
3637 doi = "10.1063/1.97667",
3638 notes = "apb 3c-sic heteroepitaxy on si",
3641 @Article{shibahara86,
3642 title = "Surface morphology of cubic Si{C}(100) grown on
3643 Si(100) by chemical vapor deposition",
3644 journal = "Journal of Crystal Growth",
3651 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3652 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3653 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3655 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3658 @Article{desjardins96,
3659 author = "P. Desjardins and J. E. Greene",
3661 title = "Step-flow epitaxial growth on two-domain surfaces",
3664 journal = "Journal of Applied Physics",
3667 pages = "1423--1434",
3668 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3669 FILM GROWTH; SURFACE STRUCTURE",
3670 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3671 doi = "10.1063/1.360980",
3672 notes = "apb model",
3676 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3678 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3679 carbonization of silicon",
3682 journal = "Journal of Applied Physics",
3685 pages = "2070--2073",
3686 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3687 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3689 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3690 doi = "10.1063/1.360184",
3691 notes = "ssmbe of sic on si, lower temperatures",
3695 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3696 {MBE} using surface superstructure",
3697 journal = "Journal of Crystal Growth",
3704 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3705 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3706 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3707 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3708 notes = "gas source mbe of 3c-sic on 6h-sic",
3711 @Article{yoshinobu92,
3712 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3713 and Takashi Fuyuki and Hiroyuki Matsunami",
3715 title = "Lattice-matched epitaxial growth of single crystalline
3716 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3717 molecular beam epitaxy",
3720 journal = "Applied Physics Letters",
3724 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3725 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3726 INTERFACE STRUCTURE",
3727 URL = "http://link.aip.org/link/?APL/60/824/1",
3728 doi = "10.1063/1.107430",
3729 notes = "gas source mbe of 3c-sic on 6h-sic",
3732 @Article{yoshinobu90,
3733 title = "Atomic level control in gas source {MBE} growth of
3735 journal = "Journal of Crystal Growth",
3742 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3743 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3744 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3745 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3746 notes = "gas source mbe of 3c-sic on 3c-sic",
3750 title = "Atomic layer epitaxy controlled by surface
3751 superstructures in Si{C}",
3752 journal = "Thin Solid Films",
3759 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3760 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3761 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3763 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3768 title = "Microscopic mechanisms of accurate layer-by-layer
3769 growth of [beta]-Si{C}",
3770 journal = "Thin Solid Films",
3777 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3778 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3779 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3780 and S. Misawa and E. Sakuma and S. Yoshida",
3781 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3786 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3788 title = "Effects of gas flow ratio on silicon carbide thin film
3789 growth mode and polytype formation during gas-source
3790 molecular beam epitaxy",
3793 journal = "Applied Physics Letters",
3796 pages = "2851--2853",
3797 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3798 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3799 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3801 URL = "http://link.aip.org/link/?APL/65/2851/1",
3802 doi = "10.1063/1.112513",
3803 notes = "gas source mbe of 6h-sic on 6h-sic",
3807 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3808 title = "Heterointerface Control and Epitaxial Growth of
3809 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3810 publisher = "WILEY-VCH Verlag",
3812 journal = "physica status solidi (b)",
3815 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3820 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3821 journal = "Journal of Crystal Growth",
3828 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3829 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3830 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3831 keywords = "Reflection high-energy electron diffraction (RHEED)",
3832 keywords = "Scanning electron microscopy (SEM)",
3833 keywords = "Silicon carbide",
3834 keywords = "Silicon",
3835 keywords = "Island growth",
3836 notes = "lower temperature, 550-700",
3839 @Article{hatayama95,
3840 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3841 on Si using hydrocarbon radicals by gas source
3842 molecular beam epitaxy",
3843 journal = "Journal of Crystal Growth",
3850 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3851 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3852 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3853 and Hiroyuki Matsunami",
3857 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3858 title = "The Preference of Silicon Carbide for Growth in the
3859 Metastable Cubic Form",
3860 journal = "Journal of the American Ceramic Society",
3863 publisher = "Blackwell Publishing Ltd",
3865 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
3866 doi = "10.1111/j.1151-2916.1991.tb06811.x",
3867 pages = "2630--2633",
3868 keywords = "silicon carbide, crystal growth, crystal structure,
3869 calculations, stability",
3871 notes = "3c-sic metastable, 3c-sic preferred growth, sic
3872 polytype dft calculation refs",
3875 @Article{allendorf91,
3876 title = "The adsorption of {H}-atoms on polycrystalline
3877 [beta]-silicon carbide",
3878 journal = "Surface Science",
3885 doi = "DOI: 10.1016/0039-6028(91)90912-C",
3886 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
3887 author = "Mark D. Allendorf and Duane A. Outka",
3888 notes = "h adsorption on 3c-sic",
3891 @Article{eaglesham93,
3892 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
3893 D. P. Adams and S. M. Yalisove",
3895 title = "Effect of {H} on Si molecular-beam epitaxy",
3898 journal = "Journal of Applied Physics",
3901 pages = "6615--6618",
3902 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
3903 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
3904 DIFFUSION; ADSORPTION",
3905 URL = "http://link.aip.org/link/?JAP/74/6615/1",
3906 doi = "10.1063/1.355101",
3907 notes = "h incorporation on si surface, lower surface