2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon Carbide Electronic Materials and Devices",
138 journal = "MRS Bull.",
145 author = "G. R. Fisher and P. Barnes",
146 title = "Towards a unified view of polytypism in silicon
148 journal = "Philos. Mag. B",
152 notes = "sic polytypes",
156 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
157 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
158 Serre and A. Perez-Rodriguez",
159 title = "Synthesis of nano-sized Si{C} precipitates in Si by
160 simultaneous dual-beam implantation of {C}+ and Si+
162 journal = "Appl. Phys. A",
167 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
168 notes = "dual implantation, sic prec enhanced by vacancies,
169 precipitation by interstitial and substitutional
170 carbon, both mechanisms explained + refs",
174 title = "Carbon-mediated effects in silicon and in
175 silicon-related materials",
176 journal = "Mater. Chem. Phys.",
183 doi = "DOI: 10.1016/0254-0584(95)01673-I",
184 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
185 author = "W. Skorupa and R. A. Yankov",
186 notes = "review of silicon carbon compound",
190 author = "P. S. de Laplace",
191 title = "Th\'eorie analytique des probabilit\'es",
192 series = "Oeuvres Compl\`etes de Laplace",
194 publisher = "Gauthier-Villars",
198 @Article{mattoni2007,
199 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
200 title = "{Atomistic modeling of brittleness in covalent
202 journal = "Phys. Rev. B",
208 doi = "10.1103/PhysRevB.76.224103",
209 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
210 longe(r)-range-interactions, brittle propagation of
211 fracture, more available potentials, universal energy
212 relation (uer), minimum range model (mrm)",
216 title = "Comparative study of silicon empirical interatomic
218 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
219 journal = "Phys. Rev. B",
222 pages = "2250--2279",
226 doi = "10.1103/PhysRevB.46.2250",
227 publisher = "American Physical Society",
228 notes = "comparison of classical potentials for si",
232 title = "Stress relaxation in $a-Si$ induced by ion
234 author = "H. M. Urbassek M. Koster",
235 journal = "Phys. Rev. B",
238 pages = "11219--11224",
242 doi = "10.1103/PhysRevB.62.11219",
243 publisher = "American Physical Society",
244 notes = "virial derivation for 3-body tersoff potential",
247 @Article{breadmore99,
248 title = "Direct simulation of ion-beam-induced stressing and
249 amorphization of silicon",
250 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
251 journal = "Phys. Rev. B",
254 pages = "12610--12616",
258 doi = "10.1103/PhysRevB.60.12610",
259 publisher = "American Physical Society",
260 notes = "virial derivation for 3-body tersoff potential",
264 title = "First-Principles Calculation of Stress",
265 author = "O. H. Nielsen and Richard M. Martin",
266 journal = "Phys. Rev. Lett.",
273 doi = "10.1103/PhysRevLett.50.697",
274 publisher = "American Physical Society",
275 notes = "generalization of virial theorem",
279 title = "Quantum-mechanical theory of stress and force",
280 author = "O. H. Nielsen and Richard M. Martin",
281 journal = "Phys. Rev. B",
284 pages = "3780--3791",
288 doi = "10.1103/PhysRevB.32.3780",
289 publisher = "American Physical Society",
290 notes = "dft virial stress and forces",
294 author = "Henri Moissan",
295 title = "Nouvelles recherches sur la météorité de Cañon
297 journal = "C. R. Acad. Sci.",
304 author = "Y. S. Park",
305 title = "Si{C} Materials and Devices",
306 publisher = "Academic Press",
307 address = "San Diego",
312 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
313 Calvin H. Carter Jr. and D. Asbury",
314 title = "Si{C} Seeded Boule Growth",
315 journal = "Mater. Sci. Forum",
319 notes = "modified lely process, micropipes",
323 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
324 Thermodynamical Properties of Lennard-Jones Molecules",
325 author = "Loup Verlet",
326 journal = "Phys. Rev.",
332 doi = "10.1103/PhysRev.159.98",
333 publisher = "American Physical Society",
334 notes = "velocity verlet integration algorithm equation of
338 @Article{berendsen84,
339 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
340 Gunsteren and A. DiNola and J. R. Haak",
342 title = "Molecular dynamics with coupling to an external bath",
345 journal = "J. Chem. Phys.",
348 pages = "3684--3690",
349 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
350 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
351 URL = "http://link.aip.org/link/?JCP/81/3684/1",
352 doi = "10.1063/1.448118",
353 notes = "berendsen thermostat barostat",
357 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
359 title = "Molecular dynamics determination of defect energetics
360 in beta -Si{C} using three representative empirical
362 journal = "Modell. Simul. Mater. Sci. Eng.",
366 URL = "http://stacks.iop.org/0965-0393/3/615",
367 notes = "comparison of tersoff, pearson and eam for defect
368 energetics in sic; (m)eam parameters for sic",
373 title = "Relationship between the embedded-atom method and
375 author = "Donald W. Brenner",
376 journal = "Phys. Rev. Lett.",
383 doi = "10.1103/PhysRevLett.63.1022",
384 publisher = "American Physical Society",
385 notes = "relation of tersoff and eam potential",
389 title = "Molecular-dynamics study of self-interstitials in
391 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
392 journal = "Phys. Rev. B",
395 pages = "9552--9558",
399 doi = "10.1103/PhysRevB.35.9552",
400 publisher = "American Physical Society",
401 notes = "selft-interstitials in silicon, stillinger-weber,
402 calculation of defect formation energy, defect
407 title = "Extended interstitials in silicon and germanium",
408 author = "H. R. Schober",
409 journal = "Phys. Rev. B",
412 pages = "13013--13015",
416 doi = "10.1103/PhysRevB.39.13013",
417 publisher = "American Physical Society",
418 notes = "stillinger-weber silicon 110 stable and metastable
419 dumbbell configuration",
423 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
424 Defect accumulation, topological features, and
426 author = "F. Gao and W. J. Weber",
427 journal = "Phys. Rev. B",
434 doi = "10.1103/PhysRevB.66.024106",
435 publisher = "American Physical Society",
436 notes = "sic intro, si cascade in 3c-sic, amorphization,
437 tersoff modified, pair correlation of amorphous sic, md
441 @Article{devanathan98,
442 title = "Computer simulation of a 10 ke{V} Si displacement
444 journal = "Nucl. Instrum. Methods Phys. Res. B",
450 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
451 author = "R. Devanathan and W. J. Weber and T. Diaz de la
453 notes = "modified tersoff short range potential, ab initio
457 @Article{devanathan98_2,
458 title = "Displacement threshold energies in [beta]-Si{C}",
459 journal = "J. Nucl. Mater.",
465 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
466 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
468 notes = "modified tersoff, ab initio, combined ab initio
472 @Article{kitabatake00,
473 title = "Si{C}/Si heteroepitaxial growth",
474 author = "M. Kitabatake",
475 journal = "Thin Solid Films",
480 notes = "md simulation, sic si heteroepitaxy, mbe",
484 title = "Intrinsic point defects in crystalline silicon:
485 Tight-binding molecular dynamics studies of
486 self-diffusion, interstitial-vacancy recombination, and
488 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
490 journal = "Phys. Rev. B",
493 pages = "14279--14289",
497 doi = "10.1103/PhysRevB.55.14279",
498 publisher = "American Physical Society",
499 notes = "si self interstitial, diffusion, tbmd",
503 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
506 title = "A kinetic Monte--Carlo study of the effective
507 diffusivity of the silicon self-interstitial in the
508 presence of carbon and boron",
511 journal = "J. Appl. Phys.",
514 pages = "1963--1967",
515 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
516 CARBON ADDITIONS; BORON ADDITIONS; elemental
517 semiconductors; self-diffusion",
518 URL = "http://link.aip.org/link/?JAP/84/1963/1",
519 doi = "10.1063/1.368328",
520 notes = "kinetic monte carlo of si self interstitial
525 title = "Barrier to Migration of the Silicon
527 author = "Y. Bar-Yam and J. D. Joannopoulos",
528 journal = "Phys. Rev. Lett.",
531 pages = "1129--1132",
535 doi = "10.1103/PhysRevLett.52.1129",
536 publisher = "American Physical Society",
537 notes = "si self-interstitial migration barrier",
540 @Article{bar-yam84_2,
541 title = "Electronic structure and total-energy migration
542 barriers of silicon self-interstitials",
543 author = "Y. Bar-Yam and J. D. Joannopoulos",
544 journal = "Phys. Rev. B",
547 pages = "1844--1852",
551 doi = "10.1103/PhysRevB.30.1844",
552 publisher = "American Physical Society",
556 title = "First-principles calculations of self-diffusion
557 constants in silicon",
558 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
559 and D. B. Laks and W. Andreoni and S. T. Pantelides",
560 journal = "Phys. Rev. Lett.",
563 pages = "2435--2438",
567 doi = "10.1103/PhysRevLett.70.2435",
568 publisher = "American Physical Society",
569 notes = "si self int diffusion by ab initio md, formation
570 entropy calculations",
574 title = "Defect migration in crystalline silicon",
575 author = "Lindsey J. Munro and David J. Wales",
576 journal = "Phys. Rev. B",
579 pages = "3969--3980",
583 doi = "10.1103/PhysRevB.59.3969",
584 publisher = "American Physical Society",
585 notes = "eigenvector following method, vacancy and interstiial
586 defect migration mechanisms",
590 title = "Tight-binding theory of native point defects in
592 author = "L. Colombo",
593 journal = "Annu. Rev. Mater. Res.",
598 doi = "10.1146/annurev.matsci.32.111601.103036",
599 publisher = "Annual Reviews",
600 notes = "si self interstitial, tbmd, virial stress",
603 @Article{al-mushadani03,
604 title = "Free-energy calculations of intrinsic point defects in
606 author = "O. K. Al-Mushadani and R. J. Needs",
607 journal = "Phys. Rev. B",
614 doi = "10.1103/PhysRevB.68.235205",
615 publisher = "American Physical Society",
616 notes = "formation energies of intrinisc point defects in
617 silicon, si self interstitials, free energy",
621 title = "Electronic surface error in the Si interstitial
623 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
625 journal = "Phys. Rev. B",
632 doi = "10.1103/PhysRevB.77.155211",
633 publisher = "American Physical Society",
634 notes = "si self interstitial formation energies by dft",
637 @Article{goedecker02,
638 title = "A Fourfold Coordinated Point Defect in Silicon",
639 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
640 journal = "Phys. Rev. Lett.",
647 doi = "10.1103/PhysRevLett.88.235501",
648 publisher = "American Physical Society",
649 notes = "first time ffcd, fourfold coordinated point defect in
654 title = "Ab initio molecular dynamics simulation of
655 self-interstitial diffusion in silicon",
656 author = "Beat Sahli and Wolfgang Fichtner",
657 journal = "Phys. Rev. B",
664 doi = "10.1103/PhysRevB.72.245210",
665 publisher = "American Physical Society",
666 notes = "si self int, diffusion, barrier height, voronoi
671 title = "Ab initio calculations of the interaction between
672 native point defects in silicon",
673 journal = "Mater. Sci. Eng., B",
678 note = "EMRS 2005, Symposium D - Materials Science and Device
679 Issues for Future Technologies",
681 doi = "DOI: 10.1016/j.mseb.2005.08.072",
682 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
683 author = "G. Hobler and G. Kresse",
684 notes = "vasp intrinsic si defect interaction study, capture
689 title = "Ab initio study of self-diffusion in silicon over a
690 wide temperature range: Point defect states and
691 migration mechanisms",
692 author = "Shangyi Ma and Shaoqing Wang",
693 journal = "Phys. Rev. B",
700 doi = "10.1103/PhysRevB.81.193203",
701 publisher = "American Physical Society",
702 notes = "si self interstitial diffusion + refs",
706 title = "Atomistic simulations on the thermal stability of the
707 antisite pair in 3{C}- and 4{H}-Si{C}",
708 author = "M. Posselt and F. Gao and W. J. Weber",
709 journal = "Phys. Rev. B",
716 doi = "10.1103/PhysRevB.73.125206",
717 publisher = "American Physical Society",
721 title = "Correlation between self-diffusion in Si and the
722 migration mechanisms of vacancies and
723 self-interstitials: An atomistic study",
724 author = "M. Posselt and F. Gao and H. Bracht",
725 journal = "Phys. Rev. B",
732 doi = "10.1103/PhysRevB.78.035208",
733 publisher = "American Physical Society",
734 notes = "si self-interstitial and vacancy diffusion, stillinger
739 title = "Ab initio and empirical-potential studies of defect
740 properties in $3{C}-Si{C}$",
741 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
743 journal = "Phys. Rev. B",
750 doi = "10.1103/PhysRevB.64.245208",
751 publisher = "American Physical Society",
752 notes = "defects in 3c-sic",
756 title = "Empirical potential approach for defect properties in
758 journal = "Nucl. Instrum. Methods Phys. Res. B",
765 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
766 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
767 author = "Fei Gao and William J. Weber",
768 keywords = "Empirical potential",
769 keywords = "Defect properties",
770 keywords = "Silicon carbide",
771 keywords = "Computer simulation",
772 notes = "sic potential, brenner type, like erhart/albe",
776 title = "Atomistic study of intrinsic defect migration in
778 author = "Fei Gao and William J. Weber and M. Posselt and V.
780 journal = "Phys. Rev. B",
787 doi = "10.1103/PhysRevB.69.245205",
788 publisher = "American Physical Society",
789 notes = "defect migration in sic",
793 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
796 title = "Ab Initio atomic simulations of antisite pair recovery
797 in cubic silicon carbide",
800 journal = "Appl. Phys. Lett.",
806 keywords = "ab initio calculations; silicon compounds; antisite
807 defects; wide band gap semiconductors; molecular
808 dynamics method; density functional theory;
809 electron-hole recombination; photoluminescence;
810 impurities; diffusion",
811 URL = "http://link.aip.org/link/?APL/90/221915/1",
812 doi = "10.1063/1.2743751",
815 @Article{mattoni2002,
816 title = "Self-interstitial trapping by carbon complexes in
817 crystalline silicon",
818 author = "A. Mattoni and F. Bernardini and L. Colombo",
819 journal = "Phys. Rev. B",
826 doi = "10.1103/PhysRevB.66.195214",
827 publisher = "American Physical Society",
828 notes = "c in c-si, diffusion, interstitial configuration +
829 links, interaction of carbon and silicon interstitials,
830 tersoff suitability",
834 title = "Calculations of Silicon Self-Interstitial Defects",
835 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
837 journal = "Phys. Rev. Lett.",
840 pages = "2351--2354",
844 doi = "10.1103/PhysRevLett.83.2351",
845 publisher = "American Physical Society",
846 notes = "nice images of the defects, si defect overview +
851 title = "Identification of the migration path of interstitial
853 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
854 journal = "Phys. Rev. B",
857 pages = "7439--7442",
861 doi = "10.1103/PhysRevB.50.7439",
862 publisher = "American Physical Society",
863 notes = "carbon interstitial migration path shown, 001 c-si
868 title = "Theory of carbon-carbon pairs in silicon",
869 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
870 journal = "Phys. Rev. B",
873 pages = "9845--9850",
877 doi = "10.1103/PhysRevB.58.9845",
878 publisher = "American Physical Society",
879 notes = "c_i c_s pair configuration, theoretical results",
883 title = "Bistable interstitial-carbon--substitutional-carbon
885 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
887 journal = "Phys. Rev. B",
890 pages = "5765--5783",
894 doi = "10.1103/PhysRevB.42.5765",
895 publisher = "American Physical Society",
896 notes = "c_i c_s pair configuration, experimental results",
900 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
901 Shifeng Lu and Xiang-Yang Liu",
903 title = "Ab initio modeling and experimental study of {C}--{B}
907 journal = "Appl. Phys. Lett.",
911 keywords = "silicon; boron; carbon; elemental semiconductors;
912 impurity-defect interactions; ab initio calculations;
913 secondary ion mass spectra; diffusion; interstitials",
914 URL = "http://link.aip.org/link/?APL/80/52/1",
915 doi = "10.1063/1.1430505",
916 notes = "c-c 100 split, lower as a and b states of capaz",
920 title = "Ab initio investigation of carbon-related defects in
922 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
924 journal = "Phys. Rev. B",
927 pages = "12554--12557",
931 doi = "10.1103/PhysRevB.47.12554",
932 publisher = "American Physical Society",
933 notes = "c interstitials in crystalline silicon",
937 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
939 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
940 Sokrates T. Pantelides",
941 journal = "Phys. Rev. Lett.",
944 pages = "1814--1817",
948 doi = "10.1103/PhysRevLett.52.1814",
949 publisher = "American Physical Society",
950 notes = "microscopic theory diffusion silicon dft migration
955 title = "Unified Approach for Molecular Dynamics and
956 Density-Functional Theory",
957 author = "R. Car and M. Parrinello",
958 journal = "Phys. Rev. Lett.",
961 pages = "2471--2474",
965 doi = "10.1103/PhysRevLett.55.2471",
966 publisher = "American Physical Society",
967 notes = "car parrinello method, dft and md",
971 title = "Short-range order, bulk moduli, and physical trends in
972 c-$Si1-x$$Cx$ alloys",
973 author = "P. C. Kelires",
974 journal = "Phys. Rev. B",
977 pages = "8784--8787",
981 doi = "10.1103/PhysRevB.55.8784",
982 publisher = "American Physical Society",
983 notes = "c strained si, montecarlo md, bulk moduli, next
988 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
989 Application to the $Si1-x-yGexCy$ System",
990 author = "P. C. Kelires",
991 journal = "Phys. Rev. Lett.",
994 pages = "1114--1117",
998 doi = "10.1103/PhysRevLett.75.1114",
999 publisher = "American Physical Society",
1000 notes = "mc md, strain compensation in si ge by c insertion",
1004 title = "Low temperature electron irradiation of silicon
1006 journal = "Solid State Commun.",
1013 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1014 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1015 author = "A. R. Bean and R. C. Newman",
1019 author = "F. Durand and J. Duby",
1020 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1021 title = "Carbon solubility in solid and liquid silicon—{A}
1022 review with reference to eutectic equilibrium",
1023 journal = "Journal of Phase Equilibria",
1024 publisher = "Springer New York",
1026 keyword = "Chemistry and Materials Science",
1030 URL = "http://dx.doi.org/10.1361/105497199770335956",
1031 note = "10.1361/105497199770335956",
1033 notes = "better c solubility limit in silicon",
1037 title = "{EPR} Observation of the Isolated Interstitial Carbon
1039 author = "G. D. Watkins and K. L. Brower",
1040 journal = "Phys. Rev. Lett.",
1043 pages = "1329--1332",
1047 doi = "10.1103/PhysRevLett.36.1329",
1048 publisher = "American Physical Society",
1049 notes = "epr observations of 100 interstitial carbon atom in
1054 title = "{EPR} identification of the single-acceptor state of
1055 interstitial carbon in silicon",
1056 author = "L. W. Song and G. D. Watkins",
1057 journal = "Phys. Rev. B",
1060 pages = "5759--5764",
1064 doi = "10.1103/PhysRevB.42.5759",
1065 publisher = "American Physical Society",
1066 notes = "carbon diffusion in silicon",
1070 author = "A K Tipping and R C Newman",
1071 title = "The diffusion coefficient of interstitial carbon in
1073 journal = "Semicond. Sci. Technol.",
1077 URL = "http://stacks.iop.org/0268-1242/2/315",
1079 notes = "diffusion coefficient of carbon interstitials in
1084 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1087 title = "Annealing behavior of Me{V} implanted carbon in
1091 journal = "J. Appl. Phys.",
1094 pages = "3815--3820",
1095 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1096 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1098 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1099 doi = "10.1063/1.354474",
1100 notes = "c at interstitial location for rt implantation in si",
1104 title = "Carbon incorporation into Si at high concentrations by
1105 ion implantation and solid phase epitaxy",
1106 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1107 Picraux and J. K. Watanabe and J. W. Mayer",
1108 journal = "J. Appl. Phys.",
1113 doi = "10.1063/1.360806",
1114 notes = "strained silicon, carbon supersaturation",
1117 @Article{laveant2002,
1118 title = "Epitaxy of carbon-rich silicon with {MBE}",
1119 journal = "Mater. Sci. Eng., B",
1125 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1126 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1127 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1129 notes = "low c in si, tensile stress to compensate compressive
1130 stress, avoid sic precipitation",
1134 title = "The formation of swirl defects in silicon by
1135 agglomeration of self-interstitials",
1136 journal = "J. Cryst. Growth",
1143 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1144 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1145 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1146 notes = "b-swirl: si + c interstitial agglomerates, c-si
1151 title = "Microdefects in silicon and their relation to point
1153 journal = "J. Cryst. Growth",
1160 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1161 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1162 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1163 notes = "swirl review",
1167 author = "P. Werner and S. Eichler and G. Mariani and R.
1168 K{\"{o}}gler and W. Skorupa",
1169 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1170 silicon by transmission electron microscopy",
1173 journal = "Appl. Phys. Lett.",
1177 keywords = "silicon; ion implantation; carbon; crystal defects;
1178 transmission electron microscopy; annealing; positron
1179 annihilation; secondary ion mass spectroscopy; buried
1180 layers; precipitation",
1181 URL = "http://link.aip.org/link/?APL/70/252/1",
1182 doi = "10.1063/1.118381",
1183 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1187 @InProceedings{werner96,
1188 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1190 booktitle = "Proceedings of the 11th International Conference on
1191 Ion Implantation Technology.",
1192 title = "{TEM} investigation of {C}-Si defects in carbon
1199 doi = "10.1109/IIT.1996.586497",
1201 notes = "c-si agglomerates dumbbells",
1205 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1208 title = "Carbon diffusion in silicon",
1211 journal = "Appl. Phys. Lett.",
1214 pages = "2465--2467",
1215 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1216 secondary ion mass spectra; semiconductor epitaxial
1217 layers; annealing; impurity-defect interactions;
1218 impurity distribution",
1219 URL = "http://link.aip.org/link/?APL/73/2465/1",
1220 doi = "10.1063/1.122483",
1221 notes = "c diffusion in si, kick out mechnism",
1225 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1227 title = "Self-interstitial enhanced carbon diffusion in
1231 journal = "Appl. Phys. Lett.",
1235 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1236 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1237 TEMPERATURE; IMPURITIES",
1238 URL = "http://link.aip.org/link/?APL/45/268/1",
1239 doi = "10.1063/1.95167",
1240 notes = "c diffusion due to si self-interstitials",
1244 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1247 title = "Characterization of SiGe/Si heterostructures formed by
1248 Ge[sup + ] and {C}[sup + ] implantation",
1251 journal = "Appl. Phys. Lett.",
1254 pages = "2345--2347",
1255 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1256 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1257 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1258 EPITAXY; CARBON IONS; GERMANIUM IONS",
1259 URL = "http://link.aip.org/link/?APL/57/2345/1",
1260 doi = "10.1063/1.103888",
1264 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1265 Doyle and S. T. Picraux and J. W. Mayer",
1267 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1270 journal = "Appl. Phys. Lett.",
1273 pages = "2786--2788",
1274 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1275 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1276 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1277 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1278 EPITAXY; AMORPHIZATION",
1279 URL = "http://link.aip.org/link/?APL/63/2786/1",
1280 doi = "10.1063/1.110334",
1284 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1285 Legoues and J. Angilello and F. Cardone",
1287 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1288 strained layer superlattices",
1291 journal = "Appl. Phys. Lett.",
1294 pages = "2758--2760",
1295 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1296 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1297 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1298 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1299 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1300 URL = "http://link.aip.org/link/?APL/60/2758/1",
1301 doi = "10.1063/1.106868",
1305 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1306 Picraux and J. K. Watanabe and J. W. Mayer",
1308 title = "Precipitation and relaxation in strained Si[sub 1 -
1309 y]{C}[sub y]/Si heterostructures",
1312 journal = "J. Appl. Phys.",
1315 pages = "3656--3668",
1316 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1317 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1318 doi = "10.1063/1.357429",
1319 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1320 precipitation by substitutional carbon, coherent prec,
1321 coherent to incoherent transition strain vs interface
1326 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1329 title = "Investigation of the high temperature behavior of
1330 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1333 journal = "J. Appl. Phys.",
1336 pages = "1934--1937",
1337 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1338 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1339 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1340 TEMPERATURE RANGE 04001000 K",
1341 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1342 doi = "10.1063/1.358826",
1346 title = "Prospects for device implementation of wide band gap
1348 author = "J. H. Edgar",
1349 journal = "J. Mater. Res.",
1354 doi = "10.1557/JMR.1992.0235",
1355 notes = "properties wide band gap semiconductor, sic
1359 @Article{zirkelbach2007,
1360 title = "Monte Carlo simulation study of a selforganisation
1361 process leading to ordered precipitate structures",
1362 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1364 journal = "Nucl. Instr. and Meth. B",
1371 doi = "doi:10.1016/j.nimb.2006.12.118",
1372 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1376 @Article{zirkelbach2006,
1377 title = "Monte-Carlo simulation study of the self-organization
1378 of nanometric amorphous precipitates in regular arrays
1379 during ion irradiation",
1380 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1382 journal = "Nucl. Instr. and Meth. B",
1389 doi = "doi:10.1016/j.nimb.2005.08.162",
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1394 @Article{zirkelbach2005,
1395 title = "Modelling of a selforganization process leading to
1396 periodic arrays of nanometric amorphous precipitates by
1398 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1400 journal = "Comp. Mater. Sci.",
1407 doi = "doi:10.1016/j.commatsci.2004.12.016",
1408 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1412 @Article{zirkelbach09,
1413 title = "Molecular dynamics simulation of defect formation and
1414 precipitation in heavily carbon doped silicon",
1415 journal = "Mater. Sci. Eng., B",
1420 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1421 Silicon Materials Research for Electronic and
1422 Photovoltaic Applications",
1424 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1425 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1426 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1428 keywords = "Silicon",
1429 keywords = "Carbon",
1430 keywords = "Silicon carbide",
1431 keywords = "Nucleation",
1432 keywords = "Defect formation",
1433 keywords = "Molecular dynamics simulations",
1436 @Article{zirkelbach10,
1437 title = "Defects in carbon implanted silicon calculated by
1438 classical potentials and first-principles methods",
1439 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1440 K. N. Lindner and W. G. Schmidt and E. Rauls",
1441 journal = "Phys. Rev. B",
1448 doi = "10.1103/PhysRevB.82.094110",
1449 publisher = "American Physical Society",
1452 @Article{zirkelbach11a,
1453 title = "First principles study of defects in carbon implanted
1455 journal = "to be published",
1460 author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
1461 and W. G. Schmidt and E. Rauls",
1464 @Article{zirkelbach11b,
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1471 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1472 K. N. Lindner and W. G. Schmidt and E. Rauls",
1476 author = "J. K. N. Lindner and A. Frohnwieser and B.
1477 Rauschenbach and B. Stritzker",
1478 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1480 journal = "MRS Proc.",
1485 doi = "10.1557/PROC-354-171",
1486 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1487 eprint = "http://journals.cambridge.org/article_S1946427400420853",
1488 notes = "first time ibs at moderate temperatures",
1492 title = "Formation of buried epitaxial silicon carbide layers
1493 in silicon by ion beam synthesis",
1494 journal = "Mater. Chem. Phys.",
1501 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1502 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1503 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1504 Götz and A. Frohnwieser and B. Rauschenbach and B.
1506 notes = "dose window",
1509 @Article{calcagno96,
1510 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1512 journal = "Nucl. Instrum. Methods Phys. Res. B",
1517 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1518 New Trends in Ion Beam Processing of Materials",
1520 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1521 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1522 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1523 Grimaldi and P. Musumeci",
1524 notes = "dose window, graphitic bonds",
1528 title = "Mechanisms of Si{C} Formation in the Ion Beam
1529 Synthesis of 3{C}-Si{C} Layers in Silicon",
1530 journal = "Mater. Sci. Forum",
1535 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1536 URL = "http://www.scientific.net/MSF.264-268.215",
1537 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1538 notes = "intermediate temperature for sharp interface + good
1543 title = "Controlling the density distribution of Si{C}
1544 nanocrystals for the ion beam synthesis of buried Si{C}
1546 journal = "Nucl. Instrum. Methods Phys. Res. B",
1553 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1554 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1555 author = "J. K. N. Lindner and B. Stritzker",
1556 notes = "two-step implantation process",
1559 @Article{lindner99_2,
1560 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1562 journal = "Nucl. Instrum. Methods Phys. Res. B",
1568 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1569 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1570 author = "J. K. N. Lindner and B. Stritzker",
1571 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1575 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1576 Basic physical processes",
1577 journal = "Nucl. Instrum. Methods Phys. Res. B",
1584 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1585 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1586 author = "J{\"{o}}rg K. N. Lindner",
1590 title = "High-dose carbon implantations into silicon:
1591 fundamental studies for new technological tricks",
1592 author = "J. K. N. Lindner",
1593 journal = "Appl. Phys. A",
1597 doi = "10.1007/s00339-002-2062-8",
1598 notes = "ibs, burried sic layers",
1602 title = "On the balance between ion beam induced nanoparticle
1603 formation and displacive precipitate resolution in the
1605 journal = "Mater. Sci. Eng., C",
1610 note = "Current Trends in Nanoscience - from Materials to
1613 doi = "DOI: 10.1016/j.msec.2005.09.099",
1614 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1615 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1617 notes = "c int diffusion barrier",
1621 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1622 application in buffer layer for Ga{N} epitaxial
1624 journal = "Appl. Surf. Sci.",
1629 note = "APHYS'03 Special Issue",
1631 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1632 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1633 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1634 and S. Nishio and K. Yasuda and Y. Ishigami",
1635 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1638 @Article{yamamoto04,
1639 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1640 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1641 implantation into Si(1 1 1) substrate",
1642 journal = "J. Cryst. Growth",
1647 note = "Proceedings of the 11th Biennial (US) Workshop on
1648 Organometallic Vapor Phase Epitaxy (OMVPE)",
1650 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1651 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1652 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1653 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1654 notes = "gan on 3c-sic",
1658 title = "Substrates for gallium nitride epitaxy",
1659 journal = "Mater. Sci. Eng., R",
1666 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1667 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1668 author = "L. Liu and J. H. Edgar",
1669 notes = "gan substrates",
1672 @Article{takeuchi91,
1673 title = "Growth of single crystalline Ga{N} film on Si
1674 substrate using 3{C}-Si{C} as an intermediate layer",
1675 journal = "J. Cryst. Growth",
1682 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1683 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1684 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1685 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1686 notes = "gan on 3c-sic (first time?)",
1690 author = "B. J. Alder and T. E. Wainwright",
1691 title = "Phase Transition for a Hard Sphere System",
1694 journal = "J. Chem. Phys.",
1697 pages = "1208--1209",
1698 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1699 doi = "10.1063/1.1743957",
1703 author = "B. J. Alder and T. E. Wainwright",
1704 title = "Studies in Molecular Dynamics. {I}. General Method",
1707 journal = "J. Chem. Phys.",
1711 URL = "http://link.aip.org/link/?JCP/31/459/1",
1712 doi = "10.1063/1.1730376",
1715 @Article{horsfield96,
1716 title = "Bond-order potentials: Theory and implementation",
1717 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1718 D. G. Pettifor and M. Aoki",
1719 journal = "Phys. Rev. B",
1722 pages = "12694--12712",
1726 doi = "10.1103/PhysRevB.53.12694",
1727 publisher = "American Physical Society",
1731 title = "Empirical chemical pseudopotential theory of molecular
1732 and metallic bonding",
1733 author = "G. C. Abell",
1734 journal = "Phys. Rev. B",
1737 pages = "6184--6196",
1741 doi = "10.1103/PhysRevB.31.6184",
1742 publisher = "American Physical Society",
1745 @Article{tersoff_si1,
1746 title = "New empirical model for the structural properties of
1748 author = "J. Tersoff",
1749 journal = "Phys. Rev. Lett.",
1756 doi = "10.1103/PhysRevLett.56.632",
1757 publisher = "American Physical Society",
1761 title = "Development of a many-body Tersoff-type potential for
1763 author = "Brian W. Dodson",
1764 journal = "Phys. Rev. B",
1767 pages = "2795--2798",
1771 doi = "10.1103/PhysRevB.35.2795",
1772 publisher = "American Physical Society",
1775 @Article{tersoff_si2,
1776 title = "New empirical approach for the structure and energy of
1778 author = "J. Tersoff",
1779 journal = "Phys. Rev. B",
1782 pages = "6991--7000",
1786 doi = "10.1103/PhysRevB.37.6991",
1787 publisher = "American Physical Society",
1790 @Article{tersoff_si3,
1791 title = "Empirical interatomic potential for silicon with
1792 improved elastic properties",
1793 author = "J. Tersoff",
1794 journal = "Phys. Rev. B",
1797 pages = "9902--9905",
1801 doi = "10.1103/PhysRevB.38.9902",
1802 publisher = "American Physical Society",
1806 title = "Empirical Interatomic Potential for Carbon, with
1807 Applications to Amorphous Carbon",
1808 author = "J. Tersoff",
1809 journal = "Phys. Rev. Lett.",
1812 pages = "2879--2882",
1816 doi = "10.1103/PhysRevLett.61.2879",
1817 publisher = "American Physical Society",
1821 title = "Modeling solid-state chemistry: Interatomic potentials
1822 for multicomponent systems",
1823 author = "J. Tersoff",
1824 journal = "Phys. Rev. B",
1827 pages = "5566--5568",
1831 doi = "10.1103/PhysRevB.39.5566",
1832 publisher = "American Physical Society",
1836 title = "Carbon defects and defect reactions in silicon",
1837 author = "J. Tersoff",
1838 journal = "Phys. Rev. Lett.",
1841 pages = "1757--1760",
1845 doi = "10.1103/PhysRevLett.64.1757",
1846 publisher = "American Physical Society",
1850 title = "Point defects and dopant diffusion in silicon",
1851 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1852 journal = "Rev. Mod. Phys.",
1859 doi = "10.1103/RevModPhys.61.289",
1860 publisher = "American Physical Society",
1864 title = "Silicon carbide: synthesis and processing",
1865 journal = "Nucl. Instrum. Methods Phys. Res. B",
1870 note = "Radiation Effects in Insulators",
1872 doi = "DOI: 10.1016/0168-583X(96)00065-1",
1873 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
1874 author = "W. Wesch",
1878 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
1879 Palmour and J. A. Edmond",
1880 journal = "Proc. IEEE",
1881 title = "Thin film deposition and microelectronic and
1882 optoelectronic device fabrication and characterization
1883 in monocrystalline alpha and beta silicon carbide",
1889 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
1890 diode;SiC;dry etching;electrical
1891 contacts;etching;impurity incorporation;optoelectronic
1892 device fabrication;solid-state devices;surface
1893 chemistry;Schottky effect;Schottky gate field effect
1894 transistors;Schottky-barrier
1895 diodes;etching;heterojunction bipolar
1896 transistors;insulated gate field effect
1897 transistors;light emitting diodes;semiconductor
1898 materials;semiconductor thin films;silicon compounds;",
1899 doi = "10.1109/5.90132",
1901 notes = "sic growth methods",
1905 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1906 Lin and B. Sverdlov and M. Burns",
1908 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1909 ZnSe-based semiconductor device technologies",
1912 journal = "J. Appl. Phys.",
1915 pages = "1363--1398",
1916 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1917 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1918 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1920 URL = "http://link.aip.org/link/?JAP/76/1363/1",
1921 doi = "10.1063/1.358463",
1922 notes = "sic intro, properties",
1926 author = "Noch Unbekannt",
1927 title = "How to find references",
1928 journal = "Journal of Applied References",
1935 title = "Atomistic simulation of thermomechanical properties of
1937 author = "Meijie Tang and Sidney Yip",
1938 journal = "Phys. Rev. B",
1941 pages = "15150--15159",
1944 doi = "10.1103/PhysRevB.52.15150",
1945 notes = "modified tersoff, scale cutoff with volume, promising
1946 tersoff reparametrization",
1947 publisher = "American Physical Society",
1951 title = "Silicon carbide as a new {MEMS} technology",
1952 journal = "Seonsor. Actuator. A",
1958 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1959 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1960 author = "Pasqualina M. Sarro",
1962 keywords = "Silicon carbide",
1963 keywords = "Micromachining",
1964 keywords = "Mechanical stress",
1968 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1969 semiconductor for high-temperature applications: {A}
1971 journal = "Solid-State Electron.",
1974 pages = "1409--1422",
1977 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1978 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1979 author = "J. B. Casady and R. W. Johnson",
1980 notes = "sic intro",
1983 @Article{giancarli98,
1984 title = "Design requirements for Si{C}/Si{C} composites
1985 structural material in fusion power reactor blankets",
1986 journal = "Fusion Eng. Des.",
1992 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1993 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1994 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1995 Marois and N. B. Morley and J. F. Salavy",
1999 title = "Electrical and optical characterization of Si{C}",
2000 journal = "Physica B",
2006 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2007 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2008 author = "G. Pensl and W. J. Choyke",
2012 title = "Investigation of growth processes of ingots of silicon
2013 carbide single crystals",
2014 journal = "J. Cryst. Growth",
2019 notes = "modified lely process",
2021 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2022 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2023 author = "Yu. M. Tairov and V. F. Tsvetkov",
2027 title = "General principles of growing large-size single
2028 crystals of various silicon carbide polytypes",
2029 journal = "J. Cryst. Growth",
2036 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2037 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2038 author = "Yu.M. Tairov and V. F. Tsvetkov",
2042 title = "Si{C} boule growth by sublimation vapor transport",
2043 journal = "J. Cryst. Growth",
2050 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2051 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2052 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2053 R. H. Hopkins and W. J. Choyke",
2057 title = "Growth of large Si{C} single crystals",
2058 journal = "J. Cryst. Growth",
2065 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2066 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2067 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2068 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2073 title = "Control of polytype formation by surface energy
2074 effects during the growth of Si{C} monocrystals by the
2075 sublimation method",
2076 journal = "J. Cryst. Growth",
2083 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2084 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2085 author = "R. A. Stein and P. Lanig",
2086 notes = "6h and 4h, sublimation technique",
2090 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2093 title = "Production of large-area single-crystal wafers of
2094 cubic Si{C} for semiconductor devices",
2097 journal = "Appl. Phys. Lett.",
2101 keywords = "silicon carbides; layers; chemical vapor deposition;
2103 URL = "http://link.aip.org/link/?APL/42/460/1",
2104 doi = "10.1063/1.93970",
2105 notes = "cvd of 3c-sic on si, sic buffer layer",
2109 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2110 and Hiroyuki Matsunami",
2112 title = "Epitaxial growth and electric characteristics of cubic
2116 journal = "J. Appl. Phys.",
2119 pages = "4889--4893",
2120 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2121 doi = "10.1063/1.338355",
2122 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2127 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2129 title = "Growth and Characterization of Cubic Si{C}
2130 Single-Crystal Films on Si",
2133 journal = "J. Electrochem. Soc.",
2136 pages = "1558--1565",
2137 keywords = "semiconductor materials; silicon compounds; carbon
2138 compounds; crystal morphology; electron mobility",
2139 URL = "http://link.aip.org/link/?JES/134/1558/1",
2140 doi = "10.1149/1.2100708",
2141 notes = "blue light emitting diodes (led)",
2144 @Article{powell87_2,
2145 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2146 C. M. Chorey and T. T. Cheng and P. Pirouz",
2148 title = "Improved beta-Si{C} heteroepitaxial films using
2149 off-axis Si substrates",
2152 journal = "Appl. Phys. Lett.",
2156 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2157 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2158 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2159 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2160 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2161 URL = "http://link.aip.org/link/?APL/51/823/1",
2162 doi = "10.1063/1.98824",
2163 notes = "improved sic on off-axis si substrates, reduced apbs",
2167 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2168 journal = "J. Cryst. Growth",
2175 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2176 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2177 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2179 notes = "step-controlled epitaxy model",
2183 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2184 and Hiroyuki Matsunami",
2185 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2189 journal = "J. Appl. Phys.",
2193 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2194 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2196 URL = "http://link.aip.org/link/?JAP/73/726/1",
2197 doi = "10.1063/1.353329",
2198 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2201 @Article{powell90_2,
2202 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2203 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2204 Yoganathan and J. Yang and P. Pirouz",
2206 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2207 vicinal (0001) 6{H}-Si{C} wafers",
2210 journal = "Appl. Phys. Lett.",
2213 pages = "1442--1444",
2214 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2215 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2216 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2217 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2218 URL = "http://link.aip.org/link/?APL/56/1442/1",
2219 doi = "10.1063/1.102492",
2220 notes = "cvd of 6h-sic on 6h-sic",
2224 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2226 title = "Chemical vapor deposition and characterization of
2227 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2231 journal = "J. Appl. Phys.",
2234 pages = "2672--2679",
2235 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2236 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2237 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2238 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2239 PHASE EPITAXY; CRYSTAL ORIENTATION",
2240 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2241 doi = "10.1063/1.341608",
2245 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2246 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2247 Yoganathan and J. Yang and P. Pirouz",
2249 title = "Growth of improved quality 3{C}-Si{C} films on
2250 6{H}-Si{C} substrates",
2253 journal = "Appl. Phys. Lett.",
2256 pages = "1353--1355",
2257 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2258 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2259 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2261 URL = "http://link.aip.org/link/?APL/56/1353/1",
2262 doi = "10.1063/1.102512",
2263 notes = "cvd of 3c-sic on 6h-sic",
2267 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2268 Rozgonyi and K. L. More",
2270 title = "An examination of double positioning boundaries and
2271 interface misfit in beta-Si{C} films on alpha-Si{C}
2275 journal = "J. Appl. Phys.",
2278 pages = "2645--2650",
2279 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2280 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2281 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2282 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2283 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2284 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2285 doi = "10.1063/1.341004",
2289 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2290 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2291 and W. J. Choyke and L. Clemen and M. Yoganathan",
2293 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2294 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2297 journal = "Appl. Phys. Lett.",
2301 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2302 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2303 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2304 URL = "http://link.aip.org/link/?APL/59/333/1",
2305 doi = "10.1063/1.105587",
2309 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2310 Thokala and M. J. Loboda",
2312 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2313 films on 6{H}-Si{C} by chemical vapor deposition from
2317 journal = "J. Appl. Phys.",
2320 pages = "1271--1273",
2321 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2322 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2324 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2325 doi = "10.1063/1.360368",
2326 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2330 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2331 properties of its p-n junction",
2332 journal = "J. Cryst. Growth",
2339 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2340 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2341 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2343 notes = "first time ssmbe of 3c-sic on 6h-sic",
2347 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2348 [alpha]-Si{C}(0001) at low temperatures by solid-source
2349 molecular beam epitaxy",
2350 journal = "J. Cryst. Growth",
2356 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2357 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2358 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2359 Schr{\"{o}}ter and W. Richter",
2360 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2363 @Article{fissel95_apl,
2364 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2366 title = "Low-temperature growth of Si{C} thin films on Si and
2367 6{H}--Si{C} by solid-source molecular beam epitaxy",
2370 journal = "Appl. Phys. Lett.",
2373 pages = "3182--3184",
2374 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2376 URL = "http://link.aip.org/link/?APL/66/3182/1",
2377 doi = "10.1063/1.113716",
2378 notes = "mbe 3c-sic on si and 6h-sic",
2382 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2383 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2385 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2386 migration enhanced epitaxy controlled to an atomic
2387 level using surface superstructures",
2390 journal = "Appl. Phys. Lett.",
2393 pages = "1204--1206",
2394 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2395 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2397 URL = "http://link.aip.org/link/?APL/68/1204/1",
2398 doi = "10.1063/1.115969",
2399 notes = "ss mbe sic, superstructure, reconstruction",
2403 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2404 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2405 C. M. Bertoni and A. Catellani",
2406 journal = "Phys. Rev. Lett.",
2413 doi = "10.1103/PhysRevLett.91.136101",
2414 publisher = "American Physical Society",
2415 notes = "dft calculations mbe sic growth",
2419 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2421 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2425 journal = "Appl. Phys. Lett.",
2429 URL = "http://link.aip.org/link/?APL/18/509/1",
2430 doi = "10.1063/1.1653516",
2431 notes = "first time sic by ibs, follow cites for precipitation
2436 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2437 and E. V. Lubopytova",
2438 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2439 by ion implantation",
2440 publisher = "Taylor \& Francis",
2442 journal = "Radiat. Eff.",
2446 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2447 notes = "3c-sic for different temperatures, amorphous, poly,
2448 single crystalline",
2451 @Article{akimchenko80,
2452 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2453 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2454 title = "Structure and optical properties of silicon implanted
2455 by high doses of 70 and 310 ke{V} carbon ions",
2456 publisher = "Taylor \& Francis",
2458 journal = "Radiat. Eff.",
2462 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2463 notes = "3c-sic nucleation by thermal spikes",
2467 title = "Structure and annealing properties of silicon carbide
2468 thin layers formed by implantation of carbon ions in
2470 journal = "Thin Solid Films",
2477 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2478 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2479 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2484 title = "Characteristics of the synthesis of [beta]-Si{C} by
2485 the implantation of carbon ions into silicon",
2486 journal = "Thin Solid Films",
2493 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2494 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2495 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2500 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2501 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2502 Chater and J. A. Iulner and J. Davis",
2503 title = "Formation mechanisms and structures of insulating
2504 compounds formed in silicon by ion beam synthesis",
2505 publisher = "Taylor \& Francis",
2507 journal = "Radiat. Eff.",
2511 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2512 notes = "ibs, comparison with sio and sin, higher temp or time,
2513 no c redistribution",
2517 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2518 J. Davis and G. E. Celler",
2520 title = "Formation of buried layers of beta-Si{C} using ion
2521 beam synthesis and incoherent lamp annealing",
2524 journal = "Appl. Phys. Lett.",
2527 pages = "2242--2244",
2528 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2529 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2530 URL = "http://link.aip.org/link/?APL/51/2242/1",
2531 doi = "10.1063/1.98953",
2532 notes = "nice tem images, sic by ibs",
2536 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2537 and M. Olivier and A. M. Papon and G. Rolland",
2539 title = "High-temperature ion beam synthesis of cubic Si{C}",
2542 journal = "J. Appl. Phys.",
2545 pages = "2908--2912",
2546 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2547 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2548 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2549 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2550 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2551 REACTIONS; MONOCRYSTALS",
2552 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2553 doi = "10.1063/1.346092",
2554 notes = "triple energy implantation to overcome high annealing
2559 author = "R. I. Scace and G. A. Slack",
2561 title = "Solubility of Carbon in Silicon and Germanium",
2564 journal = "J. Chem. Phys.",
2567 pages = "1551--1555",
2568 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2569 doi = "10.1063/1.1730236",
2570 notes = "solubility of c in c-si, si-c phase diagram",
2574 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2576 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2577 Laboratories Eindhoven Netherlands Eindhoven
2579 title = "Boron implantations in silicon: {A} comparison of
2580 charge carrier and boron concentration profiles",
2581 journal = "Appl. Phys. A",
2582 publisher = "Springer Berlin / Heidelberg",
2584 keyword = "Physics and Astronomy",
2588 URL = "http://dx.doi.org/10.1007/BF00884267",
2589 note = "10.1007/BF00884267",
2591 notes = "first time ted (only for boron?)",
2595 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2598 title = "Rapid annealing and the anomalous diffusion of ion
2599 implanted boron into silicon",
2602 journal = "Appl. Phys. Lett.",
2606 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2607 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2608 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2609 URL = "http://link.aip.org/link/?APL/50/416/1",
2610 doi = "10.1063/1.98160",
2611 notes = "ted of boron in si",
2615 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2618 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2619 time, and matrix dependence of atomic and electrical
2623 journal = "J. Appl. Phys.",
2626 pages = "6191--6198",
2627 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2628 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2629 CRYSTALS; AMORPHIZATION",
2630 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2631 doi = "10.1063/1.346910",
2632 notes = "ted of boron in si",
2636 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2637 F. W. Saris and W. Vandervorst",
2639 title = "Role of {C} and {B} clusters in transient diffusion of
2643 journal = "Appl. Phys. Lett.",
2646 pages = "1150--1152",
2647 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2648 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2650 URL = "http://link.aip.org/link/?APL/68/1150/1",
2651 doi = "10.1063/1.115706",
2652 notes = "suppression of transient enhanced diffusion (ted)",
2656 title = "Implantation and transient boron diffusion: the role
2657 of the silicon self-interstitial",
2658 journal = "Nucl. Instrum. Methods Phys. Res. B",
2663 note = "Selected Papers of the Tenth International Conference
2664 on Ion Implantation Technology (IIT '94)",
2666 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2667 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2668 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2673 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2674 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2675 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2678 title = "Physical mechanisms of transient enhanced dopant
2679 diffusion in ion-implanted silicon",
2682 journal = "J. Appl. Phys.",
2685 pages = "6031--6050",
2686 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2687 doi = "10.1063/1.364452",
2688 notes = "ted, transient enhanced diffusion, c silicon trap",
2692 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2694 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2695 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2698 journal = "Appl. Phys. Lett.",
2702 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2703 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2704 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2706 URL = "http://link.aip.org/link/?APL/64/324/1",
2707 doi = "10.1063/1.111195",
2708 notes = "beta sic nano crystals in si, mbe, annealing",
2712 author = "Richard A. Soref",
2714 title = "Optical band gap of the ternary semiconductor Si[sub 1
2715 - x - y]Ge[sub x]{C}[sub y]",
2718 journal = "J. Appl. Phys.",
2721 pages = "2470--2472",
2722 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2723 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2725 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2726 doi = "10.1063/1.349403",
2727 notes = "band gap of strained si by c",
2731 author = "E Kasper",
2732 title = "Superlattices of group {IV} elements, a new
2733 possibility to produce direct band gap material",
2734 journal = "Phys. Scr.",
2737 URL = "http://stacks.iop.org/1402-4896/T35/232",
2739 notes = "superlattices, convert indirect band gap into a
2744 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2747 title = "Growth and strain compensation effects in the ternary
2748 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2751 journal = "Appl. Phys. Lett.",
2754 pages = "3033--3035",
2755 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2756 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2757 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2758 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2760 URL = "http://link.aip.org/link/?APL/60/3033/1",
2761 doi = "10.1063/1.106774",
2765 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2768 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2772 journal = "J. Vac. Sci. Technol. B",
2775 pages = "1064--1068",
2776 location = "Ottawa (Canada)",
2777 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2778 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2779 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2780 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2781 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2782 doi = "10.1116/1.587008",
2783 notes = "substitutional c in si by mbe",
2786 @Article{powell93_2,
2787 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2788 of the ternary system",
2789 journal = "J. Cryst. Growth",
2796 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2797 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2798 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
2803 author = "H. J. Osten",
2804 title = "Modification of Growth Modes in Lattice-Mismatched
2805 Epitaxial Systems: Si/Ge",
2806 journal = "phys. status solidi (a)",
2809 publisher = "WILEY-VCH Verlag",
2811 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
2812 doi = "10.1002/pssa.2211450203",
2817 @Article{dietrich94,
2818 title = "Lattice distortion in a strain-compensated
2819 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
2820 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
2821 Methfessel and P. Zaumseil",
2822 journal = "Phys. Rev. B",
2825 pages = "17185--17190",
2829 doi = "10.1103/PhysRevB.49.17185",
2830 publisher = "American Physical Society",
2834 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
2836 title = "Growth of an inverse tetragonal distorted SiGe layer
2837 on Si(001) by adding small amounts of carbon",
2840 journal = "Appl. Phys. Lett.",
2843 pages = "3440--3442",
2844 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
2845 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
2846 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
2848 URL = "http://link.aip.org/link/?APL/64/3440/1",
2849 doi = "10.1063/1.111235",
2850 notes = "inversely strained / distorted heterostructure",
2854 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
2855 LeGoues and J. C. Tsang and F. Cardone",
2857 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
2858 molecular beam epitaxy",
2861 journal = "Appl. Phys. Lett.",
2865 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
2866 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
2867 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
2868 FILM GROWTH; MICROSTRUCTURE",
2869 URL = "http://link.aip.org/link/?APL/60/356/1",
2870 doi = "10.1063/1.106655",
2874 author = "H. J. Osten and J. Griesche and S. Scalese",
2876 title = "Substitutional carbon incorporation in epitaxial
2877 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2878 molecular beam epitaxy",
2881 journal = "Appl. Phys. Lett.",
2885 keywords = "molecular beam epitaxial growth; semiconductor growth;
2886 wide band gap semiconductors; interstitials; silicon
2888 URL = "http://link.aip.org/link/?APL/74/836/1",
2889 doi = "10.1063/1.123384",
2890 notes = "substitutional c in si by mbe",
2894 author = "M. Born and R. Oppenheimer",
2895 title = "Zur Quantentheorie der Molekeln",
2896 journal = "Ann. Phys. (Leipzig)",
2899 publisher = "WILEY-VCH Verlag",
2901 URL = "http://dx.doi.org/10.1002/andp.19273892002",
2902 doi = "10.1002/andp.19273892002",
2907 @Article{hohenberg64,
2908 title = "Inhomogeneous Electron Gas",
2909 author = "P. Hohenberg and W. Kohn",
2910 journal = "Phys. Rev.",
2913 pages = "B864--B871",
2917 doi = "10.1103/PhysRev.136.B864",
2918 publisher = "American Physical Society",
2919 notes = "density functional theory, dft",
2923 title = "The calculation of atomic fields",
2924 author = "L. H. Thomas",
2925 journal = "Proc. Cambridge Philos. Soc.",
2929 doi = "10.1017/S0305004100011683",
2934 author = "E. Fermi",
2935 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
2943 title = "The Wave Mechanics of an Atom with a Non-Coulomb
2944 Central Field. Part {I}. Theory and Methods",
2945 author = "D. R. Hartree",
2946 journal = "Proc. Cambridge Philos. Soc.",
2950 doi = "10.1017/S0305004100011919",
2954 title = "The Theory of Complex Spectra",
2955 author = "J. C. Slater",
2956 journal = "Phys. Rev.",
2959 pages = "1293--1322",
2963 doi = "10.1103/PhysRev.34.1293",
2964 publisher = "American Physical Society",
2968 title = "Self-Consistent Equations Including Exchange and
2969 Correlation Effects",
2970 author = "W. Kohn and L. J. Sham",
2971 journal = "Phys. Rev.",
2974 pages = "A1133--A1138",
2978 doi = "10.1103/PhysRev.140.A1133",
2979 publisher = "American Physical Society",
2980 notes = "dft, exchange and correlation",
2984 title = "Density Functional and Density Matrix Method Scaling
2985 Linearly with the Number of Atoms",
2987 journal = "Phys. Rev. Lett.",
2990 pages = "3168--3171",
2994 doi = "10.1103/PhysRevLett.76.3168",
2995 publisher = "American Physical Society",
2999 title = "Edge Electron Gas",
3000 author = "Walter Kohn and Ann E. Mattsson",
3001 journal = "Phys. Rev. Lett.",
3004 pages = "3487--3490",
3008 doi = "10.1103/PhysRevLett.81.3487",
3009 publisher = "American Physical Society",
3013 title = "Nobel Lecture: Electronic structure of matter---wave
3014 functions and density functionals",
3016 journal = "Rev. Mod. Phys.",
3019 pages = "1253--1266",
3023 doi = "10.1103/RevModPhys.71.1253",
3024 publisher = "American Physical Society",
3028 title = "Iterative minimization techniques for ab initio
3029 total-energy calculations: molecular dynamics and
3030 conjugate gradients",
3031 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3032 Arias and J. D. Joannopoulos",
3033 journal = "Rev. Mod. Phys.",
3036 pages = "1045--1097",
3040 doi = "10.1103/RevModPhys.64.1045",
3041 publisher = "American Physical Society",
3045 title = "Electron densities in search of Hamiltonians",
3046 author = "Mel Levy",
3047 journal = "Phys. Rev. A",
3050 pages = "1200--1208",
3054 doi = "10.1103/PhysRevA.26.1200",
3055 publisher = "American Physical Society",
3059 title = "Strain-stabilized highly concentrated pseudomorphic
3060 $Si1-x$$Cx$ layers in Si",
3061 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3063 journal = "Phys. Rev. Lett.",
3066 pages = "3578--3581",
3070 doi = "10.1103/PhysRevLett.72.3578",
3071 publisher = "American Physical Society",
3072 notes = "high c concentration in si, heterostructure, strained
3077 title = "Phosphorous Doping of Strain-Induced
3078 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3079 by Low-Temperature Chemical Vapor Deposition",
3080 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3081 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3082 journal = "Japanese J. Appl. Phys.",
3084 number = "Part 1, No. 4B",
3085 pages = "2472--2475",
3088 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3089 doi = "10.1143/JJAP.41.2472",
3090 publisher = "The Japan Society of Applied Physics",
3091 notes = "experimental charge carrier mobility in strained si",
3095 title = "Electron Transport Model for Strained Silicon-Carbon
3097 author = "Shu-Tong Chang and Chung-Yi Lin",
3098 journal = "Japanese J. Appl. Phys.",
3101 pages = "2257--2262",
3104 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3105 doi = "10.1143/JJAP.44.2257",
3106 publisher = "The Japan Society of Applied Physics",
3107 notes = "enhance of electron mobility in strained si",
3110 @Article{kissinger94,
3111 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3114 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3115 y] layers on Si(001)",
3118 journal = "Appl. Phys. Lett.",
3121 pages = "3356--3358",
3122 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3123 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3124 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3125 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3126 URL = "http://link.aip.org/link/?APL/65/3356/1",
3127 doi = "10.1063/1.112390",
3128 notes = "strained si influence on optical properties",
3132 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3135 title = "Substitutional versus interstitial carbon
3136 incorporation during pseudomorphic growth of Si[sub 1 -
3137 y]{C}[sub y] on Si(001)",
3140 journal = "J. Appl. Phys.",
3143 pages = "6711--6715",
3144 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3145 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3147 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3148 doi = "10.1063/1.363797",
3149 notes = "mbe substitutional vs interstitial c incorporation",
3153 author = "H. J. Osten and P. Gaworzewski",
3155 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3156 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3160 journal = "J. Appl. Phys.",
3163 pages = "4977--4981",
3164 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3165 semiconductors; semiconductor epitaxial layers; carrier
3166 density; Hall mobility; interstitials; defect states",
3167 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3168 doi = "10.1063/1.366364",
3169 notes = "charge transport in strained si",
3173 title = "Carbon-mediated aggregation of self-interstitials in
3174 silicon: {A} large-scale molecular dynamics study",
3175 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3176 journal = "Phys. Rev. B",
3183 doi = "10.1103/PhysRevB.69.155214",
3184 publisher = "American Physical Society",
3185 notes = "simulation using promising tersoff reparametrization",
3189 title = "Event-Based Relaxation of Continuous Disordered
3191 author = "G. T. Barkema and Normand Mousseau",
3192 journal = "Phys. Rev. Lett.",
3195 pages = "4358--4361",
3199 doi = "10.1103/PhysRevLett.77.4358",
3200 publisher = "American Physical Society",
3201 notes = "activation relaxation technique, art, speed up slow
3206 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3207 Minoukadeh and F. Willaime",
3209 title = "Some improvements of the activation-relaxation
3210 technique method for finding transition pathways on
3211 potential energy surfaces",
3214 journal = "J. Chem. Phys.",
3220 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3221 surfaces; vacancies (crystal)",
3222 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3223 doi = "10.1063/1.3088532",
3224 notes = "improvements to art, refs for methods to find
3225 transition pathways",
3228 @Article{parrinello81,
3229 author = "M. Parrinello and A. Rahman",
3231 title = "Polymorphic transitions in single crystals: {A} new
3232 molecular dynamics method",
3235 journal = "J. Appl. Phys.",
3238 pages = "7182--7190",
3239 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3240 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3241 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3242 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3243 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3245 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3246 doi = "10.1063/1.328693",
3249 @Article{stillinger85,
3250 title = "Computer simulation of local order in condensed phases
3252 author = "Frank H. Stillinger and Thomas A. Weber",
3253 journal = "Phys. Rev. B",
3256 pages = "5262--5271",
3260 doi = "10.1103/PhysRevB.31.5262",
3261 publisher = "American Physical Society",
3265 title = "Empirical potential for hydrocarbons for use in
3266 simulating the chemical vapor deposition of diamond
3268 author = "Donald W. Brenner",
3269 journal = "Phys. Rev. B",
3272 pages = "9458--9471",
3276 doi = "10.1103/PhysRevB.42.9458",
3277 publisher = "American Physical Society",
3278 notes = "brenner hydro carbons",
3282 title = "Modeling of Covalent Bonding in Solids by Inversion of
3283 Cohesive Energy Curves",
3284 author = "Martin Z. Bazant and Efthimios Kaxiras",
3285 journal = "Phys. Rev. Lett.",
3288 pages = "4370--4373",
3292 doi = "10.1103/PhysRevLett.77.4370",
3293 publisher = "American Physical Society",
3294 notes = "first si edip",
3298 title = "Environment-dependent interatomic potential for bulk
3300 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3302 journal = "Phys. Rev. B",
3305 pages = "8542--8552",
3309 doi = "10.1103/PhysRevB.56.8542",
3310 publisher = "American Physical Society",
3311 notes = "second si edip",
3315 title = "Interatomic potential for silicon defects and
3317 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3318 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3319 journal = "Phys. Rev. B",
3322 pages = "2539--2550",
3326 doi = "10.1103/PhysRevB.58.2539",
3327 publisher = "American Physical Society",
3328 notes = "latest si edip, good dislocation explanation",
3332 title = "{PARCAS} molecular dynamics code",
3333 author = "K. Nordlund",
3338 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3340 author = "Arthur F. Voter",
3341 journal = "Phys. Rev. Lett.",
3344 pages = "3908--3911",
3348 doi = "10.1103/PhysRevLett.78.3908",
3349 publisher = "American Physical Society",
3350 notes = "hyperdynamics, accelerated md",
3354 author = "Arthur F. Voter",
3356 title = "A method for accelerating the molecular dynamics
3357 simulation of infrequent events",
3360 journal = "J. Chem. Phys.",
3363 pages = "4665--4677",
3364 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3365 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3366 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3367 energy functions; surface diffusion; reaction kinetics
3368 theory; potential energy surfaces",
3369 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3370 doi = "10.1063/1.473503",
3371 notes = "improved hyperdynamics md",
3374 @Article{sorensen2000,
3375 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3377 title = "Temperature-accelerated dynamics for simulation of
3381 journal = "J. Chem. Phys.",
3384 pages = "9599--9606",
3385 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3386 MOLECULAR DYNAMICS METHOD; surface diffusion",
3387 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3388 doi = "10.1063/1.481576",
3389 notes = "temperature accelerated dynamics, tad",
3393 title = "Parallel replica method for dynamics of infrequent
3395 author = "Arthur F. Voter",
3396 journal = "Phys. Rev. B",
3399 pages = "R13985--R13988",
3403 doi = "10.1103/PhysRevB.57.R13985",
3404 publisher = "American Physical Society",
3405 notes = "parallel replica method, accelerated md",
3409 author = "Xiongwu Wu and Shaomeng Wang",
3411 title = "Enhancing systematic motion in molecular dynamics
3415 journal = "J. Chem. Phys.",
3418 pages = "9401--9410",
3419 keywords = "molecular dynamics method; argon; Lennard-Jones
3420 potential; crystallisation; liquid theory",
3421 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3422 doi = "10.1063/1.478948",
3423 notes = "self guided md, sgmd, accelerated md, enhancing
3427 @Article{choudhary05,
3428 author = "Devashish Choudhary and Paulette Clancy",
3430 title = "Application of accelerated molecular dynamics schemes
3431 to the production of amorphous silicon",
3434 journal = "J. Chem. Phys.",
3440 keywords = "molecular dynamics method; silicon; glass structure;
3441 amorphous semiconductors",
3442 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3443 doi = "10.1063/1.1878733",
3444 notes = "explanation of sgmd and hyper md, applied to amorphous
3449 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3451 title = "Carbon precipitation in silicon: Why is it so
3455 journal = "Appl. Phys. Lett.",
3458 pages = "3336--3338",
3459 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3460 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3462 URL = "http://link.aip.org/link/?APL/62/3336/1",
3463 doi = "10.1063/1.109063",
3464 notes = "interfacial energy of cubic sic and si, si self
3465 interstitials necessary for precipitation, volume
3466 decrease, high interface energy",
3469 @Article{chaussende08,
3470 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3471 journal = "J. Cryst. Growth",
3476 note = "Proceedings of the E-MRS Conference, Symposium G -
3477 Substrates of Wide Bandgap Materials",
3479 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3480 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3481 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3482 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3483 and A. Andreadou and E. K. Polychroniadis and C.
3484 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3485 notes = "3c-sic crystal growth, sic fabrication + links,
3489 @Article{chaussende07,
3490 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3491 title = "Status of Si{C} bulk growth processes",
3492 journal = "J. Phys. D",
3496 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3498 notes = "review of sic single crystal growth methods, process
3503 title = "Forces in Molecules",
3504 author = "R. P. Feynman",
3505 journal = "Phys. Rev.",
3512 doi = "10.1103/PhysRev.56.340",
3513 publisher = "American Physical Society",
3514 notes = "hellmann feynman forces",
3518 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3519 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3520 their Contrasting Properties",
3521 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3523 journal = "Phys. Rev. Lett.",
3530 doi = "10.1103/PhysRevLett.84.943",
3531 publisher = "American Physical Society",
3532 notes = "si sio2 and sic sio2 interface",
3535 @Article{djurabekova08,
3536 title = "Atomistic simulation of the interface structure of Si
3537 nanocrystals embedded in amorphous silica",
3538 author = "Flyura Djurabekova and Kai Nordlund",
3539 journal = "Phys. Rev. B",
3546 doi = "10.1103/PhysRevB.77.115325",
3547 publisher = "American Physical Society",
3548 notes = "nc-si in sio2, interface energy, nc construction,
3549 angular distribution, coordination",
3553 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3554 W. Liang and J. Zou",
3556 title = "Nature of interfacial defects and their roles in
3557 strain relaxation at highly lattice mismatched
3558 3{C}-Si{C}/Si (001) interface",
3561 journal = "J. Appl. Phys.",
3567 keywords = "anelastic relaxation; crystal structure; dislocations;
3568 elemental semiconductors; semiconductor growth;
3569 semiconductor thin films; silicon; silicon compounds;
3570 stacking faults; wide band gap semiconductors",
3571 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3572 doi = "10.1063/1.3234380",
3573 notes = "sic/si interface, follow refs, tem image
3574 deconvolution, dislocation defects",
3577 @Article{kitabatake93,
3578 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3581 title = "Simulations and experiments of Si{C} heteroepitaxial
3582 growth on Si(001) surface",
3585 journal = "J. Appl. Phys.",
3588 pages = "4438--4445",
3589 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3590 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3591 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3592 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3593 doi = "10.1063/1.354385",
3594 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3598 @Article{kitabatake97,
3599 author = "Makoto Kitabatake",
3600 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3601 Heteroepitaxial Growth",
3602 publisher = "WILEY-VCH Verlag",
3604 journal = "phys. status solidi (b)",
3607 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3608 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3609 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3613 title = "Strain relaxation and thermal stability of the
3614 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3616 journal = "Thin Solid Films",
3623 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3624 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3625 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3626 keywords = "Strain relaxation",
3627 keywords = "Interfaces",
3628 keywords = "Thermal stability",
3629 keywords = "Molecular dynamics",
3630 notes = "tersoff sic/si interface study",
3634 title = "Ab initio Study of Misfit Dislocations at the
3635 $Si{C}/Si(001)$ Interface",
3636 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3638 journal = "Phys. Rev. Lett.",
3645 doi = "10.1103/PhysRevLett.89.156101",
3646 publisher = "American Physical Society",
3647 notes = "sic/si interface study",
3650 @Article{pizzagalli03,
3651 title = "Theoretical investigations of a highly mismatched
3652 interface: Si{C}/Si(001)",
3653 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3655 journal = "Phys. Rev. B",
3662 doi = "10.1103/PhysRevB.68.195302",
3663 publisher = "American Physical Society",
3664 notes = "tersoff md and ab initio sic/si interface study",
3668 title = "Atomic configurations of dislocation core and twin
3669 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3670 electron microscopy",
3671 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3672 H. Zheng and J. W. Liang",
3673 journal = "Phys. Rev. B",
3680 doi = "10.1103/PhysRevB.75.184103",
3681 publisher = "American Physical Society",
3682 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3686 @Article{hornstra58,
3687 title = "Dislocations in the diamond lattice",
3688 journal = "J. Phys. Chem. Solids",
3695 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3696 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3697 author = "J. Hornstra",
3698 notes = "dislocations in diamond lattice",
3702 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3703 Ion `Hot' Implantation",
3704 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3705 Hirao and Naoki Arai and Tomio Izumi",
3706 journal = "Japanese J. Appl. Phys.",
3708 number = "Part 1, No. 2A",
3712 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3713 doi = "10.1143/JJAP.31.343",
3714 publisher = "The Japan Society of Applied Physics",
3715 notes = "c-c bonds in c implanted si, hot implantation
3716 efficiency, c-c hard to break by thermal annealing",
3719 @Article{eichhorn99,
3720 author = "F. Eichhorn and N. Schell and W. Matz and R.
3723 title = "Strain and Si{C} particle formation in silicon
3724 implanted with carbon ions of medium fluence studied by
3725 synchrotron x-ray diffraction",
3728 journal = "J. Appl. Phys.",
3731 pages = "4184--4187",
3732 keywords = "silicon; carbon; elemental semiconductors; chemical
3733 interdiffusion; ion implantation; X-ray diffraction;
3734 precipitation; semiconductor doping",
3735 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3736 doi = "10.1063/1.371344",
3737 notes = "sic conversion by ibs, detected substitutional carbon,
3738 expansion of si lattice",
3741 @Article{eichhorn02,
3742 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3743 Metzger and W. Matz and R. K{\"{o}}gler",
3745 title = "Structural relation between Si and Si{C} formed by
3746 carbon ion implantation",
3749 journal = "J. Appl. Phys.",
3752 pages = "1287--1292",
3753 keywords = "silicon compounds; wide band gap semiconductors; ion
3754 implantation; annealing; X-ray scattering; transmission
3755 electron microscopy",
3756 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3757 doi = "10.1063/1.1428105",
3758 notes = "3c-sic alignement to si host in ibs depending on
3759 temperature, might explain c into c sub trafo",
3763 author = "G Lucas and M Bertolus and L Pizzagalli",
3764 title = "An environment-dependent interatomic potential for
3765 silicon carbide: calculation of bulk properties,
3766 high-pressure phases, point and extended defects, and
3767 amorphous structures",
3768 journal = "J. Phys.: Condens. Matter",
3772 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3778 author = "J Godet and L Pizzagalli and S Brochard and P
3780 title = "Comparison between classical potentials and ab initio
3781 methods for silicon under large shear",
3782 journal = "J. Phys.: Condens. Matter",
3786 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3788 notes = "comparison of empirical potentials, stillinger weber,
3789 edip, tersoff, ab initio",
3792 @Article{moriguchi98,
3793 title = "Verification of Tersoff's Potential for Static
3794 Structural Analysis of Solids of Group-{IV} Elements",
3795 author = "Koji Moriguchi and Akira Shintani",
3796 journal = "Japanese J. Appl. Phys.",
3798 number = "Part 1, No. 2",
3802 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3803 doi = "10.1143/JJAP.37.414",
3804 publisher = "The Japan Society of Applied Physics",
3805 notes = "tersoff stringent test",
3808 @Article{mazzarolo01,
3809 title = "Low-energy recoils in crystalline silicon: Quantum
3811 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3812 Lulli and Eros Albertazzi",
3813 journal = "Phys. Rev. B",
3820 doi = "10.1103/PhysRevB.63.195207",
3821 publisher = "American Physical Society",
3824 @Article{holmstroem08,
3825 title = "Threshold defect production in silicon determined by
3826 density functional theory molecular dynamics
3828 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3829 journal = "Phys. Rev. B",
3836 doi = "10.1103/PhysRevB.78.045202",
3837 publisher = "American Physical Society",
3838 notes = "threshold displacement comparison empirical and ab
3842 @Article{nordlund97,
3843 title = "Repulsive interatomic potentials calculated using
3844 Hartree-Fock and density-functional theory methods",
3845 journal = "Nucl. Instrum. Methods Phys. Res. B",
3852 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3853 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3854 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3855 notes = "repulsive ab initio potential",
3859 title = "Efficiency of ab-initio total energy calculations for
3860 metals and semiconductors using a plane-wave basis
3862 journal = "Comput. Mater. Sci.",
3869 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3870 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3871 author = "G. Kresse and J. Furthm{\"{u}}ller",
3876 title = "Projector augmented-wave method",
3877 author = "P. E. Bl{\"o}chl",
3878 journal = "Phys. Rev. B",
3881 pages = "17953--17979",
3885 doi = "10.1103/PhysRevB.50.17953",
3886 publisher = "American Physical Society",
3887 notes = "paw method",
3890 @InCollection{cohen70,
3891 title = "The Fitting of Pseudopotentials to Experimental Data
3892 and Their Subsequent Application",
3893 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
3895 publisher = "Academic Press",
3899 series = "Solid State Physics",
3901 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
3902 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
3903 author = "Marvin L. Cohen and Volker Heine",
3907 title = "Norm-Conserving Pseudopotentials",
3908 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3909 journal = "Phys. Rev. Lett.",
3912 pages = "1494--1497",
3916 doi = "10.1103/PhysRevLett.43.1494",
3917 publisher = "American Physical Society",
3918 notes = "norm-conserving pseudopotentials",
3921 @Article{troullier91,
3922 title = "Efficient pseudopotentials for plane-wave
3924 author = "N. Troullier and Jos\'e Luriaas Martins",
3925 journal = "Phys. Rev. B",
3928 pages = "1993--2006",
3932 doi = "10.1103/PhysRevB.43.1993",
3933 publisher = "American Physical Society",
3936 @Article{vanderbilt90,
3937 title = "Soft self-consistent pseudopotentials in a generalized
3938 eigenvalue formalism",
3939 author = "David Vanderbilt",
3940 journal = "Phys. Rev. B",
3943 pages = "7892--7895",
3947 doi = "10.1103/PhysRevB.41.7892",
3948 publisher = "American Physical Society",
3949 notes = "vasp pseudopotentials",
3952 @Article{ceperley80,
3953 title = "Ground State of the Electron Gas by a Stochastic
3955 author = "D. M. Ceperley and B. J. Alder",
3956 journal = "Phys. Rev. Lett.",
3963 doi = "10.1103/PhysRevLett.45.566",
3964 publisher = "American Physical Society",
3968 title = "Self-interaction correction to density-functional
3969 approximations for many-electron systems",
3970 author = "J. P. Perdew and Alex Zunger",
3971 journal = "Phys. Rev. B",
3974 pages = "5048--5079",
3978 doi = "10.1103/PhysRevB.23.5048",
3979 publisher = "American Physical Society",
3983 title = "Accurate and simple density functional for the
3984 electronic exchange energy: Generalized gradient
3986 author = "John P. Perdew and Yue Wang",
3987 journal = "Phys. Rev. B",
3990 pages = "8800--8802",
3994 doi = "10.1103/PhysRevB.33.8800",
3995 publisher = "American Physical Society",
3996 notes = "rapid communication gga",
4000 title = "Generalized gradient approximations for exchange and
4001 correlation: {A} look backward and forward",
4002 journal = "Physica B",
4009 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4010 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4011 author = "John P. Perdew",
4012 notes = "gga overview",
4016 title = "Atoms, molecules, solids, and surfaces: Applications
4017 of the generalized gradient approximation for exchange
4019 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4020 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4021 and Carlos Fiolhais",
4022 journal = "Phys. Rev. B",
4025 pages = "6671--6687",
4029 doi = "10.1103/PhysRevB.46.6671",
4030 publisher = "American Physical Society",
4031 notes = "gga pw91 (as in vasp)",
4035 title = "Special Points in the Brillouin Zone",
4036 author = "D. J. Chadi and Marvin L. Cohen",
4037 journal = "Phys. Rev. B",
4040 pages = "5747--5753",
4044 doi = "10.1103/PhysRevB.8.5747",
4045 publisher = "American Physical Society",
4048 @Article{baldereschi73,
4049 title = "Mean-Value Point in the Brillouin Zone",
4050 author = "A. Baldereschi",
4051 journal = "Phys. Rev. B",
4054 pages = "5212--5215",
4058 doi = "10.1103/PhysRevB.7.5212",
4059 publisher = "American Physical Society",
4060 notes = "mean value k point",
4063 @Article{monkhorst76,
4064 title = "Special points for Brillouin-zone integrations",
4065 author = "Hendrik J. Monkhorst and James D. Pack",
4066 journal = "Phys. Rev. B",
4069 pages = "5188--5192",
4073 doi = "10.1103/PhysRevB.13.5188",
4074 publisher = "American Physical Society",
4078 title = "Ab initio pseudopotential calculations of dopant
4080 journal = "Comput. Mater. Sci.",
4087 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4088 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4089 author = "Jing Zhu",
4090 keywords = "TED (transient enhanced diffusion)",
4091 keywords = "Boron dopant",
4092 keywords = "Carbon dopant",
4093 keywords = "Defect",
4094 keywords = "ab initio pseudopotential method",
4095 keywords = "Impurity cluster",
4096 notes = "binding of c to si interstitial, c in si defects",
4100 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4102 title = "Si{C} buried layer formation by ion beam synthesis at
4106 journal = "Appl. Phys. Lett.",
4109 pages = "2646--2648",
4110 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4111 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4112 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4113 ELECTRON MICROSCOPY",
4114 URL = "http://link.aip.org/link/?APL/66/2646/1",
4115 doi = "10.1063/1.113112",
4116 notes = "precipitation mechanism by substitutional carbon, si
4117 self interstitials react with further implanted c",
4121 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4122 Kolodzey and A. Hairie",
4124 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4128 journal = "J. Appl. Phys.",
4131 pages = "4631--4633",
4132 keywords = "silicon compounds; precipitation; localised modes;
4133 semiconductor epitaxial layers; infrared spectra;
4134 Fourier transform spectra; thermal stability;
4136 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4137 doi = "10.1063/1.368703",
4138 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4142 author = "R Jones and B J Coomer and P R Briddon",
4143 title = "Quantum mechanical modelling of defects in
4145 journal = "J. Phys.: Condens. Matter",
4149 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4151 notes = "ab inito dft intro, vibrational modes, c defect in
4156 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4157 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4158 J. E. Greene and S. G. Bishop",
4160 title = "Carbon incorporation pathways and lattice sites in
4161 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4162 molecular-beam epitaxy",
4165 journal = "J. Appl. Phys.",
4168 pages = "5716--5727",
4169 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4170 doi = "10.1063/1.1465122",
4171 notes = "c substitutional incorporation pathway, dft and expt",
4175 title = "Dynamic properties of interstitial carbon and
4176 carbon-carbon pair defects in silicon",
4177 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4179 journal = "Phys. Rev. B",
4182 pages = "2188--2194",
4186 doi = "10.1103/PhysRevB.55.2188",
4187 publisher = "American Physical Society",
4188 notes = "ab initio c in si and di-carbon defect, no formation
4189 energies, different migration barriers and paths",
4193 title = "Interstitial carbon and the carbon-carbon pair in
4194 silicon: Semiempirical electronic-structure
4196 author = "Matthew J. Burnard and Gary G. DeLeo",
4197 journal = "Phys. Rev. B",
4200 pages = "10217--10225",
4204 doi = "10.1103/PhysRevB.47.10217",
4205 publisher = "American Physical Society",
4206 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4207 carbon defect, formation energies",
4211 title = "Electronic structure of interstitial carbon in
4213 author = "Morgan Besson and Gary G. DeLeo",
4214 journal = "Phys. Rev. B",
4217 pages = "4028--4033",
4221 doi = "10.1103/PhysRevB.43.4028",
4222 publisher = "American Physical Society",
4226 title = "Review of atomistic simulations of surface diffusion
4227 and growth on semiconductors",
4228 journal = "Comput. Mater. Sci.",
4233 note = "Proceedings of the Workshop on Virtual Molecular Beam
4236 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4237 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4238 author = "Efthimios Kaxiras",
4239 notes = "might contain c 100 db formation energy, overview md,
4240 tight binding, first principles",
4243 @Article{kaukonen98,
4244 title = "Effect of {N} and {B} doping on the growth of {CVD}
4246 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4248 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4249 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4251 journal = "Phys. Rev. B",
4254 pages = "9965--9970",
4258 doi = "10.1103/PhysRevB.57.9965",
4259 publisher = "American Physical Society",
4260 notes = "constrained conjugate gradient relaxation technique
4265 title = "Correlation between the antisite pair and the ${DI}$
4267 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4268 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4270 journal = "Phys. Rev. B",
4277 doi = "10.1103/PhysRevB.67.155203",
4278 publisher = "American Physical Society",
4282 title = "Production and recovery of defects in Si{C} after
4283 irradiation and deformation",
4284 journal = "J. Nucl. Mater.",
4287 pages = "1803--1808",
4291 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4292 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4293 author = "J. Chen and P. Jung and H. Klein",
4297 title = "Accumulation, dynamic annealing and thermal recovery
4298 of ion-beam-induced disorder in silicon carbide",
4299 journal = "Nucl. Instrum. Methods Phys. Res. B",
4306 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4307 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4308 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4311 @Article{bockstedte03,
4312 title = "Ab initio study of the migration of intrinsic defects
4314 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4316 journal = "Phys. Rev. B",
4323 doi = "10.1103/PhysRevB.68.205201",
4324 publisher = "American Physical Society",
4325 notes = "defect migration in sic",
4329 title = "Theoretical study of vacancy diffusion and
4330 vacancy-assisted clustering of antisites in Si{C}",
4331 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4333 journal = "Phys. Rev. B",
4340 doi = "10.1103/PhysRevB.68.155208",
4341 publisher = "American Physical Society",
4345 journal = "Telegrafiya i Telefoniya bez Provodov",
4349 author = "O. V. Lossev",
4353 title = "Luminous carborundum detector and detection effect and
4354 oscillations with crystals",
4355 journal = "Philos. Mag. Series 7",
4358 pages = "1024--1044",
4360 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4361 author = "O. V. Lossev",
4365 journal = "Physik. Zeitschr.",
4369 author = "O. V. Lossev",
4373 journal = "Physik. Zeitschr.",
4377 author = "O. V. Lossev",
4381 journal = "Physik. Zeitschr.",
4385 author = "O. V. Lossev",
4389 title = "A note on carborundum",
4390 journal = "Electrical World",
4394 author = "H. J. Round",
4397 @Article{vashishath08,
4398 title = "Recent trends in silicon carbide device research",
4399 journal = "Mj. Int. J. Sci. Tech.",
4404 author = "Munish Vashishath and Ashoke K. Chatterjee",
4405 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4406 notes = "sic polytype electronic properties",
4410 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4412 title = "Growth and Properties of beta-Si{C} Single Crystals",
4415 journal = "J. Appl. Phys.",
4419 URL = "http://link.aip.org/link/?JAP/37/333/1",
4420 doi = "10.1063/1.1707837",
4421 notes = "sic melt growth",
4425 author = "A. E. van Arkel and J. H. de Boer",
4426 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4428 publisher = "WILEY-VCH Verlag GmbH",
4430 journal = "Z. Anorg. Chem.",
4433 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4434 doi = "10.1002/zaac.19251480133",
4435 notes = "van arkel apparatus",
4439 author = "K. Moers",
4441 journal = "Z. Anorg. Chem.",
4444 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4449 author = "J. T. Kendall",
4450 title = "Electronic Conduction in Silicon Carbide",
4453 journal = "J. Chem. Phys.",
4457 URL = "http://link.aip.org/link/?JCP/21/821/1",
4458 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4463 author = "J. A. Lely",
4465 journal = "Ber. Deut. Keram. Ges.",
4468 notes = "lely sublimation growth process",
4471 @Article{knippenberg63,
4472 author = "W. F. Knippenberg",
4474 journal = "Philips Res. Repts.",
4477 notes = "acheson process",
4480 @Article{hoffmann82,
4481 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4484 title = "Silicon carbide blue light emitting diodes with
4485 improved external quantum efficiency",
4488 journal = "J. Appl. Phys.",
4491 pages = "6962--6967",
4492 keywords = "light emitting diodes; silicon carbides; quantum
4493 efficiency; visible radiation; experimental data;
4494 epitaxy; fabrication; medium temperature; layers;
4495 aluminium; nitrogen; substrates; pn junctions;
4496 electroluminescence; spectra; current density;
4498 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4499 doi = "10.1063/1.330041",
4500 notes = "blue led, sublimation process",
4504 author = "Philip Neudeck",
4505 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4506 Road 44135 Cleveland OH",
4507 title = "Progress in silicon carbide semiconductor electronics
4509 journal = "Journal of Electronic Materials",
4510 publisher = "Springer Boston",
4512 keyword = "Chemistry and Materials Science",
4516 URL = "http://dx.doi.org/10.1007/BF02659688",
4517 note = "10.1007/BF02659688",
4519 notes = "sic data, advantages of 3c sic",
4522 @Article{bhatnagar93,
4523 author = "M. Bhatnagar and B. J. Baliga",
4524 journal = "Electron Devices, IEEE Transactions on",
4525 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4532 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4533 rectifiers;Si;SiC;breakdown voltages;drift region
4534 properties;output characteristics;power MOSFETs;power
4535 semiconductor devices;switching characteristics;thermal
4536 analysis;Schottky-barrier diodes;electric breakdown of
4537 solids;insulated gate field effect transistors;power
4538 transistors;semiconductor materials;silicon;silicon
4539 compounds;solid-state rectifiers;thermal analysis;",
4540 doi = "10.1109/16.199372",
4542 notes = "comparison 3c 6h sic and si devices",
4546 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4547 A. Powell and C. S. Salupo and L. G. Matus",
4548 journal = "Electron Devices, IEEE Transactions on",
4549 title = "Electrical properties of epitaxial 3{C}- and
4550 6{H}-Si{C} p-n junction diodes produced side-by-side on
4551 6{H}-Si{C} substrates",
4557 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4558 C;6H-SiC layers;6H-SiC substrates;CVD
4559 process;SiC;chemical vapor deposition;doping;electrical
4560 properties;epitaxial layers;light
4561 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4562 diodes;polytype;rectification characteristics;reverse
4563 leakage current;reverse voltages;temperature;leakage
4564 currents;power electronics;semiconductor
4565 diodes;semiconductor epitaxial layers;semiconductor
4566 growth;semiconductor materials;silicon
4567 compounds;solid-state rectifiers;substrates;vapour
4568 phase epitaxial growth;",
4569 doi = "10.1109/16.285038",
4571 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4576 author = "N. Schulze and D. L. Barrett and G. Pensl",
4578 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
4579 single crystals by physical vapor transport",
4582 journal = "Appl. Phys. Lett.",
4585 pages = "1632--1634",
4586 keywords = "silicon compounds; semiconductor materials;
4587 semiconductor growth; crystal growth from vapour;
4588 photoluminescence; Hall mobility",
4589 URL = "http://link.aip.org/link/?APL/72/1632/1",
4590 doi = "10.1063/1.121136",
4591 notes = "micropipe free 6h-sic pvt growth",
4595 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
4597 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
4600 journal = "Appl. Phys. Lett.",
4604 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
4605 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
4606 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
4607 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
4609 URL = "http://link.aip.org/link/?APL/50/221/1",
4610 doi = "10.1063/1.97667",
4611 notes = "apb 3c-sic heteroepitaxy on si",
4614 @Article{shibahara86,
4615 title = "Surface morphology of cubic Si{C}(100) grown on
4616 Si(100) by chemical vapor deposition",
4617 journal = "J. Cryst. Growth",
4624 doi = "DOI: 10.1016/0022-0248(86)90158-2",
4625 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
4626 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
4628 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
4631 @Article{desjardins96,
4632 author = "P. Desjardins and J. E. Greene",
4634 title = "Step-flow epitaxial growth on two-domain surfaces",
4637 journal = "J. Appl. Phys.",
4640 pages = "1423--1434",
4641 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
4642 FILM GROWTH; SURFACE STRUCTURE",
4643 URL = "http://link.aip.org/link/?JAP/79/1423/1",
4644 doi = "10.1063/1.360980",
4645 notes = "apb model",
4649 author = "S. Henke and B. Stritzker and B. Rauschenbach",
4651 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
4652 carbonization of silicon",
4655 journal = "J. Appl. Phys.",
4658 pages = "2070--2073",
4659 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
4660 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
4662 URL = "http://link.aip.org/link/?JAP/78/2070/1",
4663 doi = "10.1063/1.360184",
4664 notes = "ssmbe of sic on si, lower temperatures",
4668 title = "Atomic layer epitaxy of cubic Si{C} by gas source
4669 {MBE} using surface superstructure",
4670 journal = "J. Cryst. Growth",
4677 doi = "DOI: 10.1016/0022-0248(89)90442-9",
4678 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
4679 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
4680 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
4681 notes = "gas source mbe of 3c-sic on 6h-sic",
4684 @Article{yoshinobu92,
4685 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
4686 and Takashi Fuyuki and Hiroyuki Matsunami",
4688 title = "Lattice-matched epitaxial growth of single crystalline
4689 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
4690 molecular beam epitaxy",
4693 journal = "Appl. Phys. Lett.",
4697 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
4698 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
4699 INTERFACE STRUCTURE",
4700 URL = "http://link.aip.org/link/?APL/60/824/1",
4701 doi = "10.1063/1.107430",
4702 notes = "gas source mbe of 3c-sic on 6h-sic",
4705 @Article{yoshinobu90,
4706 title = "Atomic level control in gas source {MBE} growth of
4708 journal = "J. Cryst. Growth",
4715 doi = "DOI: 10.1016/0022-0248(90)90575-6",
4716 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
4717 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
4718 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
4719 notes = "gas source mbe of 3c-sic on 3c-sic",
4723 title = "Atomic layer epitaxy controlled by surface
4724 superstructures in Si{C}",
4725 journal = "Thin Solid Films",
4732 doi = "DOI: 10.1016/0040-6090(93)90159-M",
4733 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
4734 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
4736 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4741 title = "Microscopic mechanisms of accurate layer-by-layer
4742 growth of [beta]-Si{C}",
4743 journal = "Thin Solid Films",
4750 doi = "DOI: 10.1016/0040-6090(93)90162-I",
4751 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
4752 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
4753 and S. Misawa and E. Sakuma and S. Yoshida",
4754 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
4759 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
4761 title = "Effects of gas flow ratio on silicon carbide thin film
4762 growth mode and polytype formation during gas-source
4763 molecular beam epitaxy",
4766 journal = "Appl. Phys. Lett.",
4769 pages = "2851--2853",
4770 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
4771 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
4772 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
4774 URL = "http://link.aip.org/link/?APL/65/2851/1",
4775 doi = "10.1063/1.112513",
4776 notes = "gas source mbe of 6h-sic on 6h-sic",
4780 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
4781 title = "Heterointerface Control and Epitaxial Growth of
4782 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
4783 publisher = "WILEY-VCH Verlag",
4785 journal = "phys. status solidi (b)",
4788 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
4793 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
4794 journal = "J. Cryst. Growth",
4801 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
4802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
4803 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
4804 keywords = "Reflection high-energy electron diffraction (RHEED)",
4805 keywords = "Scanning electron microscopy (SEM)",
4806 keywords = "Silicon carbide",
4807 keywords = "Silicon",
4808 keywords = "Island growth",
4809 notes = "lower temperature, 550-700",
4812 @Article{hatayama95,
4813 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
4814 on Si using hydrocarbon radicals by gas source
4815 molecular beam epitaxy",
4816 journal = "J. Cryst. Growth",
4823 doi = "DOI: 10.1016/0022-0248(95)80077-P",
4824 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
4825 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
4826 and Hiroyuki Matsunami",
4830 author = "Volker Heine and Ching Cheng and Richard J. Needs",
4831 title = "The Preference of Silicon Carbide for Growth in the
4832 Metastable Cubic Form",
4833 journal = "J. Am. Ceram. Soc.",
4836 publisher = "Blackwell Publishing Ltd",
4838 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4839 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4840 pages = "2630--2633",
4841 keywords = "silicon carbide, crystal growth, crystal structure,
4842 calculations, stability",
4844 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4845 polytype dft calculation refs",
4848 @Article{allendorf91,
4849 title = "The adsorption of {H}-atoms on polycrystalline
4850 [beta]-silicon carbide",
4851 journal = "Surf. Sci.",
4858 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4859 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4860 author = "Mark D. Allendorf and Duane A. Outka",
4861 notes = "h adsorption on 3c-sic",
4864 @Article{eaglesham93,
4865 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4866 D. P. Adams and S. M. Yalisove",
4868 title = "Effect of {H} on Si molecular-beam epitaxy",
4871 journal = "J. Appl. Phys.",
4874 pages = "6615--6618",
4875 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4876 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4877 DIFFUSION; ADSORPTION",
4878 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4879 doi = "10.1063/1.355101",
4880 notes = "h incorporation on si surface, lower surface
4885 author = "Ronald C. Newman",
4886 title = "Carbon in Crystalline Silicon",
4887 journal = "MRS Proc.",
4892 doi = "10.1557/PROC-59-403",
4893 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4894 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4898 title = "The diffusivity of carbon in silicon",
4899 journal = "J. Phys. Chem. Solids",
4906 doi = "DOI: 10.1016/0022-3697(61)90032-4",
4907 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
4908 author = "R. C. Newman and J. Wakefield",
4909 notes = "diffusivity of substitutional c in si",
4913 author = "U. Gösele",
4914 title = "The Role of Carbon and Point Defects in Silicon",
4915 journal = "MRS Proc.",
4920 doi = "10.1557/PROC-59-419",
4921 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4922 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4925 @Article{mukashev82,
4926 title = "Defects in Carbon-Implanted Silicon",
4927 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
4928 Fukuoka and Haruo Saito",
4929 journal = "Japanese J. Appl. Phys.",
4931 number = "Part 1, No. 2",
4935 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
4936 doi = "10.1143/JJAP.21.399",
4937 publisher = "The Japan Society of Applied Physics",
4941 title = "Convergence of supercell calculations for point
4942 defects in semiconductors: Vacancy in silicon",
4943 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4945 journal = "Phys. Rev. B",
4948 pages = "1318--1325",
4952 doi = "10.1103/PhysRevB.58.1318",
4953 publisher = "American Physical Society",
4954 notes = "convergence k point supercell size, vacancy in
4959 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
4960 Romano-Rodr\'{\i}guez and J. R. Morante and R.
4961 K{\"{o}}gler and W. Skorupa",
4963 title = "Spectroscopic characterization of phases formed by
4964 high-dose carbon ion implantation in silicon",
4967 journal = "J. Appl. Phys.",
4970 pages = "2978--2984",
4971 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
4972 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
4973 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
4974 DEPENDENCE; PRECIPITATES; ANNEALING",
4975 URL = "http://link.aip.org/link/?JAP/77/2978/1",
4976 doi = "10.1063/1.358714",
4979 @Article{romano-rodriguez96,
4980 title = "Detailed analysis of [beta]-Si{C} formation by high
4981 dose carbon ion implantation in silicon",
4982 journal = "Materials Science and Engineering B",
4987 note = "European Materials Research Society 1995 Spring
4988 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
4989 Oxygen in Silicon and in Other Elemental
4992 doi = "DOI: 10.1016/0921-5107(95)01283-4",
4993 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
4994 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
4995 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
4997 keywords = "Silicon",
4998 keywords = "Ion implantation",
4999 notes = "incoherent 3c-sic precipitate",
5002 @Article{davidson75,
5003 title = "The iterative calculation of a few of the lowest
5004 eigenvalues and corresponding eigenvectors of large
5005 real-symmetric matrices",
5006 journal = "J. Comput. Phys.",
5013 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5014 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5015 author = "Ernest R. Davidson",
5019 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5021 author = "T. W. Adorno",
5022 ISBN = "978-3-518-01236-9",
5023 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5025 publisher = "Suhrkamp",