2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "A. R. Bean and R. C. Newman",
46 journal = "J. Phys. Chem. Solids",
50 notes = "experimental solubility data of carbon in silicon",
54 author = "M. A. Capano and R. J. Trew",
55 title = "Silicon Carbide Electronic Materials and Devices",
56 journal = "MRS Bull.",
63 author = "G. R. Fisher and P. Barnes",
64 title = "Towards a unified view of polytypism in silicon
66 journal = "Philosophical Magazine Part B",
70 notes = "sic polytypes",
74 author = "P. S. de Laplace",
75 title = "Th\'eorie analytique des probabilit\'es",
76 series = "Oeuvres Compl\`etes de Laplace",
78 publisher = "Gauthier-Villars",
83 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
84 title = "{Atomistic modeling of brittleness in covalent
86 journal = "Phys. Rev. B",
92 doi = "10.1103/PhysRevB.76.224103",
93 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
94 longe(r)-range-interactions, brittle propagation of
95 fracture, more available potentials, universal energy
96 relation (uer), minimum range model (mrm)",
100 title = "Stress relaxation in $a-Si$ induced by ion
102 author = "H. M. Urbassek M. Koster",
103 journal = "Phys. Rev. B",
106 pages = "11219--11224",
110 doi = "10.1103/PhysRevB.62.11219",
111 publisher = "American Physical Society",
112 notes = "virial derivation for 3-body tersoff potential",
115 @Article{breadmore99,
116 title = "Direct simulation of ion-beam-induced stressing and
117 amorphization of silicon",
118 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
119 journal = "Phys. Rev. B",
122 pages = "12610--12616",
126 doi = "10.1103/PhysRevB.60.12610",
127 publisher = "American Physical Society",
128 notes = "virial derivation for 3-body tersoff potential",
132 author = "Henri Moissan",
133 title = "Nouvelles recherches sur la météorité de Cañon
135 journal = "Comptes rendus de l'Académie des Sciences",
142 author = "Y. S. Park",
143 title = "Si{C} Materials and Devices",
144 publisher = "Academic Press",
145 address = "San Diego",
150 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
151 Calvin H. Carter Jr. and D. Asbury",
152 title = "Si{C} Seeded Boule Growth",
153 journal = "Materials Science Forum",
157 notes = "modified lely process, micropipes",
161 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
162 Thermodynamical Properties of Lennard-Jones Molecules",
163 author = "Loup Verlet",
164 journal = "Phys. Rev.",
170 doi = "10.1103/PhysRev.159.98",
171 publisher = "American Physical Society",
172 notes = "velocity verlet integration algorithm equation of
176 @Article{berendsen84,
177 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
178 Gunsteren and A. DiNola and J. R. Haak",
180 title = "Molecular dynamics with coupling to an external bath",
183 journal = "The Journal of Chemical Physics",
186 pages = "3684--3690",
187 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
188 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
189 URL = "http://link.aip.org/link/?JCP/81/3684/1",
190 doi = "10.1063/1.448118",
191 notes = "berendsen thermostat barostat",
195 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
197 title = "Molecular dynamics determination of defect energetics
198 in beta -Si{C} using three representative empirical
200 journal = "Modelling and Simulation in Materials Science and
205 URL = "http://stacks.iop.org/0965-0393/3/615",
206 notes = "comparison of tersoff, pearson and eam for defect
207 energetics in sic; (m)eam parameters for sic",
212 title = "Relationship between the embedded-atom method and
214 author = "Donald W. Brenner",
215 journal = "Phys. Rev. Lett.",
222 doi = "10.1103/PhysRevLett.63.1022",
223 publisher = "American Physical Society",
224 notes = "relation of tersoff and eam potential",
228 title = "Molecular-dynamics study of self-interstitials in
230 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
231 journal = "Phys. Rev. B",
234 pages = "9552--9558",
238 doi = "10.1103/PhysRevB.35.9552",
239 publisher = "American Physical Society",
240 notes = "selft-interstitials in silicon, stillinger-weber,
241 calculation of defect formation energy, defect
246 title = "Extended interstitials in silicon and germanium",
247 author = "H. R. Schober",
248 journal = "Phys. Rev. B",
251 pages = "13013--13015",
255 doi = "10.1103/PhysRevB.39.13013",
256 publisher = "American Physical Society",
257 notes = "stillinger-weber silicon 110 stable and metastable
258 dumbbell configuration",
262 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
263 Defect accumulation, topological features, and
265 author = "F. Gao and W. J. Weber",
266 journal = "Phys. Rev. B",
273 doi = "10.1103/PhysRevB.66.024106",
274 publisher = "American Physical Society",
275 notes = "sic intro, si cascade in 3c-sic, amorphization,
276 tersoff modified, pair correlation of amorphous sic, md
280 @Article{devanathan98,
281 title = "Computer simulation of a 10 ke{V} Si displacement
283 journal = "Nuclear Instruments and Methods in Physics Research
284 Section B: Beam Interactions with Materials and Atoms",
290 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
291 author = "R. Devanathan and W. J. Weber and T. Diaz de la
293 notes = "modified tersoff short range potential, ab initio
297 @Article{devanathan98_2,
298 title = "Displacement threshold energies in [beta]-Si{C}",
299 journal = "Journal of Nuclear Materials",
305 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
306 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
308 notes = "modified tersoff, ab initio, combined ab initio
313 title = "Si{C}/Si heteroepitaxial growth",
314 author = "M. Kitabatake",
315 journal = "Thin Solid Films",
320 notes = "md simulation, sic si heteroepitaxy, mbe",
324 title = "Intrinsic point defects in crystalline silicon:
325 Tight-binding molecular dynamics studies of
326 self-diffusion, interstitial-vacancy recombination, and
328 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
330 journal = "Phys. Rev. B",
333 pages = "14279--14289",
337 doi = "10.1103/PhysRevB.55.14279",
338 publisher = "American Physical Society",
339 notes = "si self interstitial, diffusion, tbmd",
343 title = "Tight-binding theory of native point defects in
345 author = "L. Colombo",
346 journal = "Annu. Rev. Mater. Res.",
351 doi = "10.1146/annurev.matsci.32.111601.103036",
352 publisher = "Annual Reviews",
353 notes = "si self interstitial, tbmd, virial stress",
357 title = "Ab initio and empirical-potential studies of defect
358 properties in $3{C}-Si{C}$",
359 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
361 journal = "Phys. Rev. B",
368 doi = "10.1103/PhysRevB.64.245208",
369 publisher = "American Physical Society",
370 notes = "defects in 3c-sic",
373 @Article{mattoni2002,
374 title = "Self-interstitial trapping by carbon complexes in
375 crystalline silicon",
376 author = "A. Mattoni and F. Bernardini and L. Colombo",
377 journal = "Phys. Rev. B",
384 doi = "10.1103/PhysRevB.66.195214",
385 publisher = "American Physical Society",
386 notes = "c in c-si, diffusion, interstitial configuration +
391 title = "Calculations of Silicon Self-Interstitial Defects",
392 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
394 journal = "Phys. Rev. Lett.",
397 pages = "2351--2354",
401 doi = "10.1103/PhysRevLett.83.2351",
402 publisher = "American Physical Society",
403 notes = "nice images of the defects, si defect overview +
408 title = "Identification of the migration path of interstitial
410 author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
411 journal = "Phys. Rev. B",
414 pages = "7439--7442",
418 doi = "10.1103/PhysRevB.50.7439",
419 publisher = "American Physical Society",
420 notes = "carbon interstitial migration path shown, 001 c-si
425 title = "Ab initio investigation of carbon-related defects in
427 author = "A. Dal Pino and Andrew M. Rappe and J. D.
429 journal = "Phys. Rev. B",
432 pages = "12554--12557",
436 doi = "10.1103/PhysRevB.47.12554",
437 publisher = "American Physical Society",
438 notes = "c interstitials in crystalline silicon",
442 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
444 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
445 Sokrates T. Pantelides",
446 journal = "Phys. Rev. Lett.",
449 pages = "1814--1817",
453 doi = "10.1103/PhysRevLett.52.1814",
454 publisher = "American Physical Society",
455 notes = "microscopic theory diffusion silicon dft migration
460 title = "Short-range order, bulk moduli, and physical trends in
461 c-$Si1-x$$Cx$ alloys",
462 author = "P. C. Kelires",
463 journal = "Phys. Rev. B",
466 pages = "8784--8787",
470 doi = "10.1103/PhysRevB.55.8784",
471 publisher = "American Physical Society",
472 notes = "c strained si, montecarlo md, bulk moduli, next
477 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
478 Application to the $Si1-x-yGexCy$ System",
479 author = "P. C. Kelires",
480 journal = "Phys. Rev. Lett.",
483 pages = "1114--1117",
487 doi = "10.1103/PhysRevLett.75.1114",
488 publisher = "American Physical Society",
489 notes = "mc md, strain compensation in si ge by c insertion",
493 title = "Low temperature electron irradiation of silicon
495 journal = "Solid State Communications",
502 doi = "DOI: 10.1016/0038-1098(70)90074-8",
503 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
504 author = "A. R. Bean and R. C. Newman",
508 title = "{EPR} Observation of the Isolated Interstitial Carbon
510 author = "G. D. Watkins and K. L. Brower",
511 journal = "Phys. Rev. Lett.",
514 pages = "1329--1332",
518 doi = "10.1103/PhysRevLett.36.1329",
519 publisher = "American Physical Society",
520 notes = "epr observations of 100 interstitial carbon atom in
525 title = "{EPR} identification of the single-acceptor state of
526 interstitial carbon in silicon",
527 author = "G. D. Watkins L. W. Song",
528 journal = "Phys. Rev. B",
531 pages = "5759--5764",
535 doi = "10.1103/PhysRevB.42.5759",
536 publisher = "American Physical Society",
537 notes = "carbon diffusion in silicon",
541 author = "A K Tipping and R C Newman",
542 title = "The diffusion coefficient of interstitial carbon in
544 journal = "Semiconductor Science and Technology",
548 URL = "http://stacks.iop.org/0268-1242/2/315",
550 notes = "diffusion coefficient of carbon interstitials in
555 title = "Carbon incorporation into Si at high concentrations by
556 ion implantation and solid phase epitaxy",
557 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
558 Picraux and J. K. Watanabe and J. W. Mayer",
559 journal = "J. Appl. Phys.",
564 doi = "10.1063/1.360806",
565 notes = "strained silicon, carbon supersaturation",
568 @Article{laveant2002,
569 title = "Epitaxy of carbon-rich silicon with {MBE}",
570 author = "P. Laveant and G. Gerth and P. Werner and U.
572 journal = "Materials Science and Engineering B",
576 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
577 notes = "low c in si, tensile stress to compensate compressive
578 stress, avoid sic precipitation",
582 author = "P. Werner and S. Eichler and G. Mariani and R.
583 K{\"{o}}gler and W. Skorupa",
584 title = "Investigation of {C}[sub x]Si defects in {C} implanted
585 silicon by transmission electron microscopy",
588 journal = "Applied Physics Letters",
592 keywords = "silicon; ion implantation; carbon; crystal defects;
593 transmission electron microscopy; annealing; positron
594 annihilation; secondary ion mass spectroscopy; buried
595 layers; precipitation",
596 URL = "http://link.aip.org/link/?APL/70/252/1",
597 doi = "10.1063/1.118381",
598 notes = "si-c complexes, agglomerate, sic in si matrix, sic
603 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
604 Picraux and J. K. Watanabe and J. W. Mayer",
606 title = "Precipitation and relaxation in strained Si[sub 1 -
607 y]{C}[sub y]/Si heterostructures",
610 journal = "Journal of Applied Physics",
613 pages = "3656--3668",
614 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
615 URL = "http://link.aip.org/link/?JAP/76/3656/1",
616 doi = "10.1063/1.357429",
617 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
621 title = "Prospects for device implementation of wide band gap
623 author = "J. H. Edgar",
624 journal = "J. Mater. Res.",
629 doi = "10.1557/JMR.1992.0235",
630 notes = "properties wide band gap semiconductor, sic
634 @Article{zirkelbach2007,
635 title = "Monte Carlo simulation study of a selforganisation
636 process leading to ordered precipitate structures",
637 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
639 journal = "Nucl. Instr. and Meth. B",
646 doi = "doi:10.1016/j.nimb.2006.12.118",
647 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
651 @Article{zirkelbach2006,
652 title = "Monte-Carlo simulation study of the self-organization
653 of nanometric amorphous precipitates in regular arrays
654 during ion irradiation",
655 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
657 journal = "Nucl. Instr. and Meth. B",
664 doi = "doi:10.1016/j.nimb.2005.08.162",
665 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
669 @Article{zirkelbach2005,
670 title = "Modelling of a selforganization process leading to
671 periodic arrays of nanometric amorphous precipitates by
673 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
675 journal = "Comp. Mater. Sci.",
682 doi = "doi:10.1016/j.commatsci.2004.12.016",
683 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
688 title = "Controlling the density distribution of Si{C}
689 nanocrystals for the ion beam synthesis of buried Si{C}
691 journal = "Nuclear Instruments and Methods in Physics Research
692 Section B: Beam Interactions with Materials and Atoms",
699 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
700 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
701 author = "J. K. N. Lindner and B. Stritzker",
702 notes = "two-step implantation process",
705 @Article{lindner99_2,
706 title = "Mechanisms in the ion beam synthesis of Si{C} layers
708 journal = "Nuclear Instruments and Methods in Physics Research
709 Section B: Beam Interactions with Materials and Atoms",
716 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
717 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
718 author = "J. K. N. Lindner and B. Stritzker",
722 title = "Ion beam synthesis of buried Si{C} layers in silicon:
723 Basic physical processes",
724 journal = "Nuclear Instruments and Methods in Physics Research
725 Section B: Beam Interactions with Materials and Atoms",
732 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
733 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
734 author = "Jörg K. N. Lindner",
738 title = "High-dose carbon implantations into silicon:
739 fundamental studies for new technological tricks",
740 author = "J. K. N. Lindner",
741 journal = "Appl. Phys. A",
745 doi = "10.1007/s00339-002-2062-8",
746 notes = "ibs, burried sic layers",
750 author = "B. J. Alder and T. E. Wainwright",
751 title = "Phase Transition for a Hard Sphere System",
754 journal = "The Journal of Chemical Physics",
757 pages = "1208--1209",
758 URL = "http://link.aip.org/link/?JCP/27/1208/1",
759 doi = "10.1063/1.1743957",
763 author = "B. J. Alder and T. E. Wainwright",
764 title = "Studies in Molecular Dynamics. {I}. General Method",
767 journal = "The Journal of Chemical Physics",
771 URL = "http://link.aip.org/link/?JCP/31/459/1",
772 doi = "10.1063/1.1730376",
775 @Article{tersoff_si1,
776 title = "New empirical model for the structural properties of
778 author = "J. Tersoff",
779 journal = "Phys. Rev. Lett.",
786 doi = "10.1103/PhysRevLett.56.632",
787 publisher = "American Physical Society",
790 @Article{tersoff_si2,
791 title = "New empirical approach for the structure and energy of
793 author = "J. Tersoff",
794 journal = "Phys. Rev. B",
797 pages = "6991--7000",
801 doi = "10.1103/PhysRevB.37.6991",
802 publisher = "American Physical Society",
805 @Article{tersoff_si3,
806 title = "Empirical interatomic potential for silicon with
807 improved elastic properties",
808 author = "J. Tersoff",
809 journal = "Phys. Rev. B",
812 pages = "9902--9905",
816 doi = "10.1103/PhysRevB.38.9902",
817 publisher = "American Physical Society",
821 title = "Empirical Interatomic Potential for Carbon, with
822 Applications to Amorphous Carbon",
823 author = "J. Tersoff",
824 journal = "Phys. Rev. Lett.",
827 pages = "2879--2882",
831 doi = "10.1103/PhysRevLett.61.2879",
832 publisher = "American Physical Society",
836 title = "Modeling solid-state chemistry: Interatomic potentials
837 for multicomponent systems",
838 author = "J. Tersoff",
839 journal = "Phys. Rev. B",
842 pages = "5566--5568",
846 doi = "10.1103/PhysRevB.39.5566",
847 publisher = "American Physical Society",
851 title = "Carbon defects and defect reactions in silicon",
852 author = "J. Tersoff",
853 journal = "Phys. Rev. Lett.",
856 pages = "1757--1760",
860 doi = "10.1103/PhysRevLett.64.1757",
861 publisher = "American Physical Society",
865 title = "Point defects and dopant diffusion in silicon",
866 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
867 journal = "Rev. Mod. Phys.",
874 doi = "10.1103/RevModPhys.61.289",
875 publisher = "American Physical Society",
879 title = "Silicon carbide: synthesis and processing",
880 journal = "Nuclear Instruments and Methods in Physics Research
881 Section B: Beam Interactions with Materials and Atoms",
886 note = "Radiation Effects in Insulators",
888 doi = "DOI: 10.1016/0168-583X(96)00065-1",
889 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
894 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
895 Lin and B. Sverdlov and M. Burns",
897 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
898 ZnSe-based semiconductor device technologies",
901 journal = "Journal of Applied Physics",
904 pages = "1363--1398",
905 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
906 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
907 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
909 URL = "http://link.aip.org/link/?JAP/76/1363/1",
910 doi = "10.1063/1.358463",
914 author = "Noch Unbekannt",
915 title = "How to find references",
916 journal = "Journal of Applied References",
923 title = "Atomistic simulation of thermomechanical properties of
925 author = "Meijie Tang and Sidney Yip",
926 journal = "Phys. Rev. B",
929 pages = "15150--15159",
933 doi = "10.1103/PhysRevB.52.15150",
934 notes = "modified tersoff, scale cutoff with volume",
935 publisher = "American Physical Society",
939 title = "Silicon carbide as a new {MEMS} technology",
940 journal = "Sensors and Actuators A: Physical",
946 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
947 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
948 author = "Pasqualina M. Sarro",
950 keywords = "Silicon carbide",
951 keywords = "Micromachining",
952 keywords = "Mechanical stress",
956 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
957 semiconductor for high-temperature applications: {A}
959 journal = "Solid-State Electronics",
962 pages = "1409--1422",
965 doi = "DOI: 10.1016/0038-1101(96)00045-7",
966 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
967 author = "J. B. Casady and R. W. Johnson",
970 @Article{giancarli98,
971 title = "Design requirements for Si{C}/Si{C} composites
972 structural material in fusion power reactor blankets",
973 journal = "Fusion Engineering and Design",
979 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
980 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
981 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
982 Marois and N. B. Morley and J. F. Salavy",
986 title = "Electrical and optical characterization of Si{C}",
987 journal = "Physica B: Condensed Matter",
993 doi = "DOI: 10.1016/0921-4526(93)90249-6",
994 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
995 author = "G. Pensl and W. J. Choyke",
999 title = "Investigation of growth processes of ingots of silicon
1000 carbide single crystals",
1001 journal = "Journal of Crystal Growth",
1006 notes = "modifief lely process",
1008 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1009 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1010 author = "Yu. M. Tairov and V. F. Tsvetkov",
1014 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1016 title = "Growth and Characterization of Cubic Si{C}
1017 Single-Crystal Films on Si",
1020 journal = "Journal of The Electrochemical Society",
1023 pages = "1558--1565",
1024 keywords = "semiconductor materials; silicon compounds; carbon
1025 compounds; crystal morphology; electron mobility",
1026 URL = "http://link.aip.org/link/?JES/134/1558/1",
1027 doi = "10.1149/1.2100708",
1028 notes = "blue light emitting diodes (led)",
1032 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1033 and Hiroyuki Matsunami",
1034 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1038 journal = "Journal of Applied Physics",
1042 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1043 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1045 URL = "http://link.aip.org/link/?JAP/73/726/1",
1046 doi = "10.1063/1.353329",
1050 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1051 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1052 Yoganathan and J. Yang and P. Pirouz",
1054 title = "Growth of improved quality 3{C}-Si{C} films on
1055 6{H}-Si{C} substrates",
1058 journal = "Applied Physics Letters",
1061 pages = "1353--1355",
1062 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1063 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1064 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1066 URL = "http://link.aip.org/link/?APL/56/1353/1",
1067 doi = "10.1063/1.102512",
1071 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1072 [alpha]-Si{C}(0001) at low temperatures by solid-source
1073 molecular beam epitaxy",
1074 journal = "Journal of Crystal Growth",
1079 notes = "solid source mbe",
1081 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1082 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1083 author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
1088 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1090 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1094 journal = "Applied Physics Letters",
1098 URL = "http://link.aip.org/link/?APL/18/509/1",
1099 notes = "first time sic by ibs",
1100 doi = "10.1063/1.1653516",
1104 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1105 J. Davis and G. E. Celler",
1107 title = "Formation of buried layers of beta-Si{C} using ion
1108 beam synthesis and incoherent lamp annealing",
1111 journal = "Applied Physics Letters",
1114 pages = "2242--2244",
1115 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1116 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1117 URL = "http://link.aip.org/link/?APL/51/2242/1",
1118 doi = "10.1063/1.98953",
1119 notes = "nice tem images, sic by ibs",
1123 author = "R. I. Scace and G. A. Slack",
1125 title = "Solubility of Carbon in Silicon and Germanium",
1128 journal = "The Journal of Chemical Physics",
1131 pages = "1551--1555",
1132 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1133 doi = "10.1063/1.1730236",
1134 notes = "solubility of c in c-si",
1138 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1139 F. W. Saris and W. Vandervorst",
1141 title = "Role of {C} and {B} clusters in transient diffusion of
1145 journal = "Applied Physics Letters",
1148 pages = "1150--1152",
1149 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1150 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1152 URL = "http://link.aip.org/link/?APL/68/1150/1",
1153 doi = "10.1063/1.115706",
1154 notes = "suppression of transient enhanced diffusion (ted)",
1158 title = "Implantation and transient boron diffusion: the role
1159 of the silicon self-interstitial",
1160 journal = "Nuclear Instruments and Methods in Physics Research
1161 Section B: Beam Interactions with Materials and Atoms",
1166 note = "Selected Papers of the Tenth International Conference
1167 on Ion Implantation Technology (IIT '94)",
1169 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1170 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1171 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1176 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1177 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1178 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1181 title = "Physical mechanisms of transient enhanced dopant
1182 diffusion in ion-implanted silicon",
1185 journal = "Journal of Applied Physics",
1188 pages = "6031--6050",
1189 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1190 doi = "10.1063/1.364452",
1191 notes = "ted, transient enhanced diffusion, c silicon trap"
1195 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1197 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1198 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1201 journal = "Applied Physics Letters",
1205 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1206 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1207 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1209 URL = "http://link.aip.org/link/?APL/64/324/1",
1210 doi = "10.1063/1.111195",
1211 notes = "beta sic nano crystals in si, mbe, annealing",
1215 author = "Richard A. Soref",
1217 title = "Optical band gap of the ternary semiconductor Si[sub 1
1218 - x - y]Ge[sub x]{C}[sub y]",
1221 journal = "Journal of Applied Physics",
1224 pages = "2470--2472",
1225 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1226 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1228 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1229 doi = "10.1063/1.349403",
1230 notes = "band gap of strained si by c",
1234 author = "E Kasper",
1235 title = "Superlattices of group {IV} elements, a new
1236 possibility to produce direct band gap material",
1237 journal = "Physica Scripta",
1240 URL = "http://stacks.iop.org/1402-4896/T35/232",
1242 notes = "superlattices, convert indirect band gap into a
1247 author = "H. J. Osten and J. Griesche and S. Scalese",
1249 title = "Substitutional carbon incorporation in epitaxial
1250 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1251 molecular beam epitaxy",
1254 journal = "Applied Physics Letters",
1258 keywords = "molecular beam epitaxial growth; semiconductor growth;
1259 wide band gap semiconductors; interstitials; silicon
1261 URL = "http://link.aip.org/link/?APL/74/836/1",
1262 doi = "10.1063/1.123384",
1263 notes = "substitutional c in si",
1266 @Article{hohenberg64,
1267 title = "Inhomogeneous Electron Gas",
1268 author = "P. Hohenberg and W. Kohn",
1269 journal = "Phys. Rev.",
1272 pages = "B864--B871",
1276 doi = "10.1103/PhysRev.136.B864",
1277 publisher = "American Physical Society",
1278 notes = "density functional theory, dft",
1282 title = "Self-Consistent Equations Including Exchange and
1283 Correlation Effects",
1284 author = "W. Kohn and L. J. Sham",
1285 journal = "Phys. Rev.",
1288 pages = "A1133--A1138",
1292 doi = "10.1103/PhysRev.140.A1133",
1293 publisher = "American Physical Society",
1294 notes = "dft, exchange and correlation",
1298 title = "Strain-stabilized highly concentrated pseudomorphic
1299 $Si1-x$$Cx$ layers in Si",
1300 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1302 journal = "Phys. Rev. Lett.",
1305 pages = "3578--3581",
1309 doi = "10.1103/PhysRevLett.72.3578",
1310 publisher = "American Physical Society",
1311 notes = "high c concentration in si, heterostructure, starined
1316 title = "Electron Transport Model for Strained Silicon-Carbon
1318 author = "Shu-Tong Chang and Chung-Yi Lin",
1319 journal = "Japanese Journal of Applied Physics",
1322 pages = "2257--2262",
1325 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
1326 doi = "10.1143/JJAP.44.2257",
1327 publisher = "The Japan Society of Applied Physics",
1328 notes = "enhance of electron mobility in starined si",
1332 author = "H. J. Osten and P. Gaworzewski",
1334 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
1335 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
1339 journal = "Journal of Applied Physics",
1342 pages = "4977--4981",
1343 keywords = "silicon compounds; Ge-Si alloys; wide band gap
1344 semiconductors; semiconductor epitaxial layers; carrier
1345 density; Hall mobility; interstitials; defect states",
1346 URL = "http://link.aip.org/link/?JAP/82/4977/1",
1347 doi = "10.1063/1.366364",
1348 notes = "charge transport in strained si",
1351 @Article{PhysRevB.69.155214,
1352 title = "Carbon-mediated aggregation of self-interstitials in
1353 silicon: {A} large-scale molecular dynamics study",
1354 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
1355 journal = "Phys. Rev. B",
1362 doi = "10.1103/PhysRevB.69.155214",
1363 publisher = "American Physical Society",
1364 notes = "simulation using promising tersoff reparametrization",
1368 title = "Atomistic simulation of thermomechanical properties of
1370 author = "Meijie Tang and Sidney Yip",
1371 journal = "Phys. Rev. B",
1374 pages = "15150--15159",
1378 doi = "10.1103/PhysRevB.52.15150",
1379 publisher = "American Physical Society",
1380 notes = "promising tersoff reparametrization",
1384 title = "Event-Based Relaxation of Continuous Disordered
1386 author = "G. T. Barkema and Normand Mousseau",
1387 journal = "Phys. Rev. Lett.",
1390 pages = "4358--4361",
1394 doi = "10.1103/PhysRevLett.77.4358",
1395 publisher = "American Physical Society",
1396 notes = "activation relaxation technique, art, speed up slow
1401 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
1402 Minoukadeh and F. Willaime",
1404 title = "Some improvements of the activation-relaxation
1405 technique method for finding transition pathways on
1406 potential energy surfaces",
1409 journal = "The Journal of Chemical Physics",
1415 keywords = "eigenvalues and eigenfunctions; iron; potential energy
1416 surfaces; vacancies (crystal)",
1417 URL = "http://link.aip.org/link/?JCP/130/114711/1",
1418 doi = "10.1063/1.3088532",
1419 notes = "improvements to art, refs for methods to find
1420 transition pathways",