2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
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1276 journal = "Mater. Sci. Eng., C",
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1361 author = "B. J. Alder and T. E. Wainwright",
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1511 journal = "J. Appl. Phys.",
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1525 author = "Noch Unbekannt",
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1534 title = "Atomistic simulation of thermomechanical properties of
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1563 keywords = "Mechanical stress",
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1582 @Article{giancarli98,
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1584 structural material in fusion power reactor blankets",
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1593 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1594 Marois and N. B. Morley and J. F. Salavy",
1598 title = "Electrical and optical characterization of Si{C}",
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1607 author = "G. Pensl and W. J. Choyke",
1611 title = "Investigation of growth processes of ingots of silicon
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1613 journal = "J. Cryst. Growth",
1618 notes = "modified lely process",
1620 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1621 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1622 author = "Yu. M. Tairov and V. F. Tsvetkov",
1626 title = "General principles of growing large-size single
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1635 doi = "DOI: 10.1016/0022-0248(81)90184-6",
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1641 title = "Si{C} boule growth by sublimation vapor transport",
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1689 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
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1902 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1903 URL = "http://link.aip.org/link/?APL/59/333/1",
1904 doi = "10.1063/1.105587",
1908 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1909 Thokala and M. J. Loboda",
1911 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1912 films on 6{H}-Si{C} by chemical vapor deposition from
1916 journal = "J. Appl. Phys.",
1919 pages = "1271--1273",
1920 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1921 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1923 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1924 doi = "10.1063/1.360368",
1925 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1929 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1930 [alpha]-Si{C}(0001) at low temperatures by solid-source
1931 molecular beam epitaxy",
1932 journal = "J. Cryst. Growth",
1938 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1939 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1940 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1941 Schr{\"{o}}ter and W. Richter",
1942 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1945 @Article{fissel95_apl,
1946 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1948 title = "Low-temperature growth of Si{C} thin films on Si and
1949 6{H}--Si{C} by solid-source molecular beam epitaxy",
1952 journal = "Appl. Phys. Lett.",
1955 pages = "3182--3184",
1956 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1958 URL = "http://link.aip.org/link/?APL/66/3182/1",
1959 doi = "10.1063/1.113716",
1960 notes = "mbe 3c-sic on si and 6h-sic",
1964 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
1965 Bernd Schr{\"{o}}ter and Wolfgang Richter",
1967 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
1968 migration enhanced epitaxy controlled to an atomic
1969 level using surface superstructures",
1972 journal = "Applied Physics Letters",
1975 pages = "1204--1206",
1976 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1977 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
1979 URL = "http://link.aip.org/link/?APL/68/1204/1",
1980 doi = "10.1063/1.115969",
1981 notes = "ss mbe sic, superstructure, reconstruction",
1985 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
1986 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
1987 C. M. Bertoni and A. Catellani",
1988 journal = "Phys. Rev. Lett.",
1995 doi = "10.1103/PhysRevLett.91.136101",
1996 publisher = "American Physical Society",
1997 notes = "dft calculations mbe sic growth",
2001 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2003 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2007 journal = "Appl. Phys. Lett.",
2011 URL = "http://link.aip.org/link/?APL/18/509/1",
2012 doi = "10.1063/1.1653516",
2013 notes = "first time sic by ibs, follow cites for precipitation
2018 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2019 J. Davis and G. E. Celler",
2021 title = "Formation of buried layers of beta-Si{C} using ion
2022 beam synthesis and incoherent lamp annealing",
2025 journal = "Appl. Phys. Lett.",
2028 pages = "2242--2244",
2029 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2030 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2031 URL = "http://link.aip.org/link/?APL/51/2242/1",
2032 doi = "10.1063/1.98953",
2033 notes = "nice tem images, sic by ibs",
2037 author = "R. I. Scace and G. A. Slack",
2039 title = "Solubility of Carbon in Silicon and Germanium",
2042 journal = "J. Chem. Phys.",
2045 pages = "1551--1555",
2046 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2047 doi = "10.1063/1.1730236",
2048 notes = "solubility of c in c-si, si-c phase diagram",
2052 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2053 F. W. Saris and W. Vandervorst",
2055 title = "Role of {C} and {B} clusters in transient diffusion of
2059 journal = "Appl. Phys. Lett.",
2062 pages = "1150--1152",
2063 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2064 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2066 URL = "http://link.aip.org/link/?APL/68/1150/1",
2067 doi = "10.1063/1.115706",
2068 notes = "suppression of transient enhanced diffusion (ted)",
2072 title = "Implantation and transient boron diffusion: the role
2073 of the silicon self-interstitial",
2074 journal = "Nucl. Instrum. Methods Phys. Res. B",
2079 note = "Selected Papers of the Tenth International Conference
2080 on Ion Implantation Technology (IIT '94)",
2082 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2083 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2084 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2089 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2090 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2091 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2094 title = "Physical mechanisms of transient enhanced dopant
2095 diffusion in ion-implanted silicon",
2098 journal = "J. Appl. Phys.",
2101 pages = "6031--6050",
2102 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2103 doi = "10.1063/1.364452",
2104 notes = "ted, transient enhanced diffusion, c silicon trap",
2108 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2110 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2111 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2114 journal = "Appl. Phys. Lett.",
2118 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2119 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2120 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2122 URL = "http://link.aip.org/link/?APL/64/324/1",
2123 doi = "10.1063/1.111195",
2124 notes = "beta sic nano crystals in si, mbe, annealing",
2128 author = "Richard A. Soref",
2130 title = "Optical band gap of the ternary semiconductor Si[sub 1
2131 - x - y]Ge[sub x]{C}[sub y]",
2134 journal = "J. Appl. Phys.",
2137 pages = "2470--2472",
2138 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2139 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2141 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2142 doi = "10.1063/1.349403",
2143 notes = "band gap of strained si by c",
2147 author = "E Kasper",
2148 title = "Superlattices of group {IV} elements, a new
2149 possibility to produce direct band gap material",
2150 journal = "Physica Scripta",
2153 URL = "http://stacks.iop.org/1402-4896/T35/232",
2155 notes = "superlattices, convert indirect band gap into a
2160 author = "H. J. Osten and J. Griesche and S. Scalese",
2162 title = "Substitutional carbon incorporation in epitaxial
2163 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2164 molecular beam epitaxy",
2167 journal = "Appl. Phys. Lett.",
2171 keywords = "molecular beam epitaxial growth; semiconductor growth;
2172 wide band gap semiconductors; interstitials; silicon
2174 URL = "http://link.aip.org/link/?APL/74/836/1",
2175 doi = "10.1063/1.123384",
2176 notes = "substitutional c in si",
2179 @Article{hohenberg64,
2180 title = "Inhomogeneous Electron Gas",
2181 author = "P. Hohenberg and W. Kohn",
2182 journal = "Phys. Rev.",
2185 pages = "B864--B871",
2189 doi = "10.1103/PhysRev.136.B864",
2190 publisher = "American Physical Society",
2191 notes = "density functional theory, dft",
2195 title = "Self-Consistent Equations Including Exchange and
2196 Correlation Effects",
2197 author = "W. Kohn and L. J. Sham",
2198 journal = "Phys. Rev.",
2201 pages = "A1133--A1138",
2205 doi = "10.1103/PhysRev.140.A1133",
2206 publisher = "American Physical Society",
2207 notes = "dft, exchange and correlation",
2211 title = "Strain-stabilized highly concentrated pseudomorphic
2212 $Si1-x$$Cx$ layers in Si",
2213 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2215 journal = "Phys. Rev. Lett.",
2218 pages = "3578--3581",
2222 doi = "10.1103/PhysRevLett.72.3578",
2223 publisher = "American Physical Society",
2224 notes = "high c concentration in si, heterostructure, strained
2229 title = "Electron Transport Model for Strained Silicon-Carbon
2231 author = "Shu-Tong Chang and Chung-Yi Lin",
2232 journal = "Japanese J. Appl. Phys.",
2235 pages = "2257--2262",
2238 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2239 doi = "10.1143/JJAP.44.2257",
2240 publisher = "The Japan Society of Applied Physics",
2241 notes = "enhance of electron mobility in starined si",
2245 author = "H. J. Osten and P. Gaworzewski",
2247 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2248 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2252 journal = "J. Appl. Phys.",
2255 pages = "4977--4981",
2256 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2257 semiconductors; semiconductor epitaxial layers; carrier
2258 density; Hall mobility; interstitials; defect states",
2259 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2260 doi = "10.1063/1.366364",
2261 notes = "charge transport in strained si",
2265 title = "Carbon-mediated aggregation of self-interstitials in
2266 silicon: {A} large-scale molecular dynamics study",
2267 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2268 journal = "Phys. Rev. B",
2275 doi = "10.1103/PhysRevB.69.155214",
2276 publisher = "American Physical Society",
2277 notes = "simulation using promising tersoff reparametrization",
2281 title = "Event-Based Relaxation of Continuous Disordered
2283 author = "G. T. Barkema and Normand Mousseau",
2284 journal = "Phys. Rev. Lett.",
2287 pages = "4358--4361",
2291 doi = "10.1103/PhysRevLett.77.4358",
2292 publisher = "American Physical Society",
2293 notes = "activation relaxation technique, art, speed up slow
2298 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2299 Minoukadeh and F. Willaime",
2301 title = "Some improvements of the activation-relaxation
2302 technique method for finding transition pathways on
2303 potential energy surfaces",
2306 journal = "J. Chem. Phys.",
2312 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2313 surfaces; vacancies (crystal)",
2314 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2315 doi = "10.1063/1.3088532",
2316 notes = "improvements to art, refs for methods to find
2317 transition pathways",
2320 @Article{parrinello81,
2321 author = "M. Parrinello and A. Rahman",
2323 title = "Polymorphic transitions in single crystals: {A} new
2324 molecular dynamics method",
2327 journal = "J. Appl. Phys.",
2330 pages = "7182--7190",
2331 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2332 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2333 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2334 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2335 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2337 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2338 doi = "10.1063/1.328693",
2341 @Article{stillinger85,
2342 title = "Computer simulation of local order in condensed phases
2344 author = "Frank H. Stillinger and Thomas A. Weber",
2345 journal = "Phys. Rev. B",
2348 pages = "5262--5271",
2352 doi = "10.1103/PhysRevB.31.5262",
2353 publisher = "American Physical Society",
2357 title = "Empirical potential for hydrocarbons for use in
2358 simulating the chemical vapor deposition of diamond
2360 author = "Donald W. Brenner",
2361 journal = "Phys. Rev. B",
2364 pages = "9458--9471",
2368 doi = "10.1103/PhysRevB.42.9458",
2369 publisher = "American Physical Society",
2370 notes = "brenner hydro carbons",
2374 title = "Modeling of Covalent Bonding in Solids by Inversion of
2375 Cohesive Energy Curves",
2376 author = "Martin Z. Bazant and Efthimios Kaxiras",
2377 journal = "Phys. Rev. Lett.",
2380 pages = "4370--4373",
2384 doi = "10.1103/PhysRevLett.77.4370",
2385 publisher = "American Physical Society",
2386 notes = "first si edip",
2390 title = "Environment-dependent interatomic potential for bulk
2392 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2394 journal = "Phys. Rev. B",
2397 pages = "8542--8552",
2401 doi = "10.1103/PhysRevB.56.8542",
2402 publisher = "American Physical Society",
2403 notes = "second si edip",
2407 title = "Interatomic potential for silicon defects and
2409 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2410 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2411 journal = "Phys. Rev. B",
2414 pages = "2539--2550",
2418 doi = "10.1103/PhysRevB.58.2539",
2419 publisher = "American Physical Society",
2420 notes = "latest si edip, good dislocation explanation",
2424 title = "{PARCAS} molecular dynamics code",
2425 author = "K. Nordlund",
2430 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2432 author = "Arthur F. Voter",
2433 journal = "Phys. Rev. Lett.",
2436 pages = "3908--3911",
2440 doi = "10.1103/PhysRevLett.78.3908",
2441 publisher = "American Physical Society",
2442 notes = "hyperdynamics, accelerated md",
2446 author = "Arthur F. Voter",
2448 title = "A method for accelerating the molecular dynamics
2449 simulation of infrequent events",
2452 journal = "J. Chem. Phys.",
2455 pages = "4665--4677",
2456 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2457 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2458 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2459 energy functions; surface diffusion; reaction kinetics
2460 theory; potential energy surfaces",
2461 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2462 doi = "10.1063/1.473503",
2463 notes = "improved hyperdynamics md",
2466 @Article{sorensen2000,
2467 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2469 title = "Temperature-accelerated dynamics for simulation of
2473 journal = "J. Chem. Phys.",
2476 pages = "9599--9606",
2477 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2478 MOLECULAR DYNAMICS METHOD; surface diffusion",
2479 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2480 doi = "10.1063/1.481576",
2481 notes = "temperature accelerated dynamics, tad",
2485 title = "Parallel replica method for dynamics of infrequent
2487 author = "Arthur F. Voter",
2488 journal = "Phys. Rev. B",
2491 pages = "R13985--R13988",
2495 doi = "10.1103/PhysRevB.57.R13985",
2496 publisher = "American Physical Society",
2497 notes = "parallel replica method, accelerated md",
2501 author = "Xiongwu Wu and Shaomeng Wang",
2503 title = "Enhancing systematic motion in molecular dynamics
2507 journal = "J. Chem. Phys.",
2510 pages = "9401--9410",
2511 keywords = "molecular dynamics method; argon; Lennard-Jones
2512 potential; crystallisation; liquid theory",
2513 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2514 doi = "10.1063/1.478948",
2515 notes = "self guided md, sgmd, accelerated md, enhancing
2519 @Article{choudhary05,
2520 author = "Devashish Choudhary and Paulette Clancy",
2522 title = "Application of accelerated molecular dynamics schemes
2523 to the production of amorphous silicon",
2526 journal = "J. Chem. Phys.",
2532 keywords = "molecular dynamics method; silicon; glass structure;
2533 amorphous semiconductors",
2534 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2535 doi = "10.1063/1.1878733",
2536 notes = "explanation of sgmd and hyper md, applied to amorphous
2541 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2543 title = "Carbon precipitation in silicon: Why is it so
2547 journal = "Appl. Phys. Lett.",
2550 pages = "3336--3338",
2551 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2552 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2554 URL = "http://link.aip.org/link/?APL/62/3336/1",
2555 doi = "10.1063/1.109063",
2556 notes = "interfacial energy of cubic sic and si",
2559 @Article{chaussende08,
2560 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2561 journal = "J. Cryst. Growth",
2566 note = "Proceedings of the E-MRS Conference, Symposium G -
2567 Substrates of Wide Bandgap Materials",
2569 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2570 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2571 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2572 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2573 and A. Andreadou and E. K. Polychroniadis and C.
2574 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2575 notes = "3c-sic crystal growth, sic fabrication + links,
2579 @Article{chaussende07,
2580 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2581 title = "Status of Si{C} bulk growth processes",
2582 journal = "Journal of Physics D: Applied Physics",
2586 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2588 notes = "review of sic single crystal growth methods, process
2593 title = "Forces in Molecules",
2594 author = "R. P. Feynman",
2595 journal = "Phys. Rev.",
2602 doi = "10.1103/PhysRev.56.340",
2603 publisher = "American Physical Society",
2604 notes = "hellmann feynman forces",
2608 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2609 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2610 their Contrasting Properties",
2611 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2613 journal = "Phys. Rev. Lett.",
2620 doi = "10.1103/PhysRevLett.84.943",
2621 publisher = "American Physical Society",
2622 notes = "si sio2 and sic sio2 interface",
2625 @Article{djurabekova08,
2626 title = "Atomistic simulation of the interface structure of Si
2627 nanocrystals embedded in amorphous silica",
2628 author = "Flyura Djurabekova and Kai Nordlund",
2629 journal = "Phys. Rev. B",
2636 doi = "10.1103/PhysRevB.77.115325",
2637 publisher = "American Physical Society",
2638 notes = "nc-si in sio2, interface energy, nc construction,
2639 angular distribution, coordination",
2643 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2644 W. Liang and J. Zou",
2646 title = "Nature of interfacial defects and their roles in
2647 strain relaxation at highly lattice mismatched
2648 3{C}-Si{C}/Si (001) interface",
2651 journal = "J. Appl. Phys.",
2657 keywords = "anelastic relaxation; crystal structure; dislocations;
2658 elemental semiconductors; semiconductor growth;
2659 semiconductor thin films; silicon; silicon compounds;
2660 stacking faults; wide band gap semiconductors",
2661 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2662 doi = "10.1063/1.3234380",
2663 notes = "sic/si interface, follow refs, tem image
2664 deconvolution, dislocation defects",
2667 @Article{kitabatake93,
2668 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2671 title = "Simulations and experiments of Si{C} heteroepitaxial
2672 growth on Si(001) surface",
2675 journal = "J. Appl. Phys.",
2678 pages = "4438--4445",
2679 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2680 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2681 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2682 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2683 doi = "10.1063/1.354385",
2684 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2688 @Article{kitabatake97,
2689 author = "Makoto Kitabatake",
2690 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2691 Heteroepitaxial Growth",
2692 publisher = "WILEY-VCH Verlag",
2694 journal = "physica status solidi (b)",
2697 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2698 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2699 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2703 title = "Strain relaxation and thermal stability of the
2704 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2706 journal = "Thin Solid Films",
2713 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2714 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2715 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2716 keywords = "Strain relaxation",
2717 keywords = "Interfaces",
2718 keywords = "Thermal stability",
2719 keywords = "Molecular dynamics",
2720 notes = "tersoff sic/si interface study",
2724 title = "Ab initio Study of Misfit Dislocations at the
2725 $Si{C}/Si(001)$ Interface",
2726 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2728 journal = "Phys. Rev. Lett.",
2735 doi = "10.1103/PhysRevLett.89.156101",
2736 publisher = "American Physical Society",
2737 notes = "sic/si interface study",
2740 @Article{pizzagalli03,
2741 title = "Theoretical investigations of a highly mismatched
2742 interface: Si{C}/Si(001)",
2743 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2745 journal = "Phys. Rev. B",
2752 doi = "10.1103/PhysRevB.68.195302",
2753 publisher = "American Physical Society",
2754 notes = "tersoff md and ab initio sic/si interface study",
2758 title = "Atomic configurations of dislocation core and twin
2759 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2760 electron microscopy",
2761 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2762 H. Zheng and J. W. Liang",
2763 journal = "Phys. Rev. B",
2770 doi = "10.1103/PhysRevB.75.184103",
2771 publisher = "American Physical Society",
2772 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2776 @Article{hornstra58,
2777 title = "Dislocations in the diamond lattice",
2778 journal = "Journal of Physics and Chemistry of Solids",
2785 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2786 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2787 author = "J. Hornstra",
2788 notes = "dislocations in diamond lattice",
2792 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2793 Ion `Hot' Implantation",
2794 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2795 Hirao and Naoki Arai and Tomio Izumi",
2796 journal = "Japanese Journal of Applied Physics",
2798 number = "Part 1, No. 2A",
2802 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2803 doi = "10.1143/JJAP.31.343",
2804 publisher = "The Japan Society of Applied Physics",
2805 notes = "c-c bonds in c implanted si, hot implantation
2806 efficiency, c-c hard to break by thermal annealing",
2809 @Article{eichhorn99,
2810 author = "F. Eichhorn and N. Schell and W. Matz and R.
2813 title = "Strain and Si{C} particle formation in silicon
2814 implanted with carbon ions of medium fluence studied by
2815 synchrotron x-ray diffraction",
2818 journal = "J. Appl. Phys.",
2821 pages = "4184--4187",
2822 keywords = "silicon; carbon; elemental semiconductors; chemical
2823 interdiffusion; ion implantation; X-ray diffraction;
2824 precipitation; semiconductor doping",
2825 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2826 doi = "10.1063/1.371344",
2827 notes = "sic conversion by ibs, detected substitutional carbon,
2828 expansion of si lattice",
2831 @Article{eichhorn02,
2832 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2833 Metzger and W. Matz and R. K{\"{o}}gler",
2835 title = "Structural relation between Si and Si{C} formed by
2836 carbon ion implantation",
2839 journal = "J. Appl. Phys.",
2842 pages = "1287--1292",
2843 keywords = "silicon compounds; wide band gap semiconductors; ion
2844 implantation; annealing; X-ray scattering; transmission
2845 electron microscopy",
2846 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2847 doi = "10.1063/1.1428105",
2848 notes = "3c-sic alignement to si host in ibs depending on
2849 temperature, might explain c into c sub trafo",
2853 author = "G Lucas and M Bertolus and L Pizzagalli",
2854 title = "An environment-dependent interatomic potential for
2855 silicon carbide: calculation of bulk properties,
2856 high-pressure phases, point and extended defects, and
2857 amorphous structures",
2858 journal = "J. Phys.: Condens. Matter",
2862 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2868 author = "J Godet and L Pizzagalli and S Brochard and P
2870 title = "Comparison between classical potentials and ab initio
2871 methods for silicon under large shear",
2872 journal = "J. Phys.: Condens. Matter",
2876 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2878 notes = "comparison of empirical potentials, stillinger weber,
2879 edip, tersoff, ab initio",
2882 @Article{moriguchi98,
2883 title = "Verification of Tersoff's Potential for Static
2884 Structural Analysis of Solids of Group-{IV} Elements",
2885 author = "Koji Moriguchi and Akira Shintani",
2886 journal = "Japanese J. Appl. Phys.",
2888 number = "Part 1, No. 2",
2892 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2893 doi = "10.1143/JJAP.37.414",
2894 publisher = "The Japan Society of Applied Physics",
2895 notes = "tersoff stringent test",
2898 @Article{mazzarolo01,
2899 title = "Low-energy recoils in crystalline silicon: Quantum
2901 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2902 Lulli and Eros Albertazzi",
2903 journal = "Phys. Rev. B",
2910 doi = "10.1103/PhysRevB.63.195207",
2911 publisher = "American Physical Society",
2914 @Article{holmstroem08,
2915 title = "Threshold defect production in silicon determined by
2916 density functional theory molecular dynamics
2918 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2919 journal = "Phys. Rev. B",
2926 doi = "10.1103/PhysRevB.78.045202",
2927 publisher = "American Physical Society",
2928 notes = "threshold displacement comparison empirical and ab
2932 @Article{nordlund97,
2933 title = "Repulsive interatomic potentials calculated using
2934 Hartree-Fock and density-functional theory methods",
2935 journal = "Nucl. Instrum. Methods Phys. Res. B",
2942 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2943 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2944 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2945 notes = "repulsive ab initio potential",
2949 title = "Efficiency of ab-initio total energy calculations for
2950 metals and semiconductors using a plane-wave basis
2952 journal = "Comput. Mater. Sci.",
2959 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2960 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2961 author = "G. Kresse and J. Furthm{\"{u}}ller",
2966 title = "Projector augmented-wave method",
2967 author = "P. E. Bl{\"o}chl",
2968 journal = "Phys. Rev. B",
2971 pages = "17953--17979",
2975 doi = "10.1103/PhysRevB.50.17953",
2976 publisher = "American Physical Society",
2977 notes = "paw method",
2981 title = "Norm-Conserving Pseudopotentials",
2982 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2983 journal = "Phys. Rev. Lett.",
2986 pages = "1494--1497",
2990 doi = "10.1103/PhysRevLett.43.1494",
2991 publisher = "American Physical Society",
2992 notes = "norm-conserving pseudopotentials",
2995 @Article{vanderbilt90,
2996 title = "Soft self-consistent pseudopotentials in a generalized
2997 eigenvalue formalism",
2998 author = "David Vanderbilt",
2999 journal = "Phys. Rev. B",
3002 pages = "7892--7895",
3006 doi = "10.1103/PhysRevB.41.7892",
3007 publisher = "American Physical Society",
3008 notes = "vasp pseudopotentials",
3012 title = "Accurate and simple density functional for the
3013 electronic exchange energy: Generalized gradient
3015 author = "John P. Perdew and Yue Wang",
3016 journal = "Phys. Rev. B",
3019 pages = "8800--8802",
3023 doi = "10.1103/PhysRevB.33.8800",
3024 publisher = "American Physical Society",
3025 notes = "rapid communication gga",
3029 title = "Generalized gradient approximations for exchange and
3030 correlation: {A} look backward and forward",
3031 journal = "Physica B: Condensed Matter",
3038 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3039 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3040 author = "John P. Perdew",
3041 notes = "gga overview",
3045 title = "Atoms, molecules, solids, and surfaces: Applications
3046 of the generalized gradient approximation for exchange
3048 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3049 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3050 and Carlos Fiolhais",
3051 journal = "Phys. Rev. B",
3054 pages = "6671--6687",
3058 doi = "10.1103/PhysRevB.46.6671",
3059 publisher = "American Physical Society",
3060 notes = "gga pw91 (as in vasp)",
3063 @Article{baldereschi73,
3064 title = "Mean-Value Point in the Brillouin Zone",
3065 author = "A. Baldereschi",
3066 journal = "Phys. Rev. B",
3069 pages = "5212--5215",
3073 doi = "10.1103/PhysRevB.7.5212",
3074 publisher = "American Physical Society",
3075 notes = "mean value k point",
3079 title = "Ab initio pseudopotential calculations of dopant
3081 journal = "Comput. Mater. Sci.",
3088 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3089 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3090 author = "Jing Zhu",
3091 keywords = "TED (transient enhanced diffusion)",
3092 keywords = "Boron dopant",
3093 keywords = "Carbon dopant",
3094 keywords = "Defect",
3095 keywords = "ab initio pseudopotential method",
3096 keywords = "Impurity cluster",
3097 notes = "binding of c to si interstitial, c in si defects",
3101 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3103 title = "Si{C} buried layer formation by ion beam synthesis at
3107 journal = "Appl. Phys. Lett.",
3110 pages = "2646--2648",
3111 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3112 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3113 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3114 ELECTRON MICROSCOPY",
3115 URL = "http://link.aip.org/link/?APL/66/2646/1",
3116 doi = "10.1063/1.113112",
3117 notes = "precipitation mechanism by substitutional carbon, si
3118 self interstitials react with further implanted c",
3122 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3123 Kolodzey and A. Hairie",
3125 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3129 journal = "J. Appl. Phys.",
3132 pages = "4631--4633",
3133 keywords = "silicon compounds; precipitation; localised modes;
3134 semiconductor epitaxial layers; infrared spectra;
3135 Fourier transform spectra; thermal stability;
3137 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3138 doi = "10.1063/1.368703",
3139 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3143 author = "R Jones and B J Coomer and P R Briddon",
3144 title = "Quantum mechanical modelling of defects in
3146 journal = "J. Phys.: Condens. Matter",
3150 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3152 notes = "ab inito init, vibrational modes, c defect in si",
3156 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3157 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3158 J. E. Greene and S. G. Bishop",
3160 title = "Carbon incorporation pathways and lattice sites in
3161 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3162 molecular-beam epitaxy",
3165 journal = "J. Appl. Phys.",
3168 pages = "5716--5727",
3169 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3170 doi = "10.1063/1.1465122",
3171 notes = "c substitutional incorporation pathway, dft and expt",
3175 title = "Dynamic properties of interstitial carbon and
3176 carbon-carbon pair defects in silicon",
3177 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3179 journal = "Phys. Rev. B",
3182 pages = "2188--2194",
3186 doi = "10.1103/PhysRevB.55.2188",
3187 publisher = "American Physical Society",
3188 notes = "ab initio c in si and di-carbon defect, no formation
3189 energies, different migration barriers and paths",
3193 title = "Interstitial carbon and the carbon-carbon pair in
3194 silicon: Semiempirical electronic-structure
3196 author = "Matthew J. Burnard and Gary G. DeLeo",
3197 journal = "Phys. Rev. B",
3200 pages = "10217--10225",
3204 doi = "10.1103/PhysRevB.47.10217",
3205 publisher = "American Physical Society",
3206 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3207 carbon defect, formation energies",
3211 title = "Electronic structure of interstitial carbon in
3213 author = "Morgan Besson and Gary G. DeLeo",
3214 journal = "Phys. Rev. B",
3217 pages = "4028--4033",
3221 doi = "10.1103/PhysRevB.43.4028",
3222 publisher = "American Physical Society",
3226 title = "Review of atomistic simulations of surface diffusion
3227 and growth on semiconductors",
3228 journal = "Comput. Mater. Sci.",
3233 note = "Proceedings of the Workshop on Virtual Molecular Beam
3236 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3237 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3238 author = "Efthimios Kaxiras",
3239 notes = "might contain c 100 db formation energy, overview md,
3240 tight binding, first principles",
3243 @Article{kaukonen98,
3244 title = "Effect of {N} and {B} doping on the growth of {CVD}
3246 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3248 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3249 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3251 journal = "Phys. Rev. B",
3254 pages = "9965--9970",
3258 doi = "10.1103/PhysRevB.57.9965",
3259 publisher = "American Physical Society",
3260 notes = "constrained conjugate gradient relaxation technique
3265 title = "Correlation between the antisite pair and the ${DI}$
3267 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3268 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3270 journal = "Phys. Rev. B",
3277 doi = "10.1103/PhysRevB.67.155203",
3278 publisher = "American Physical Society",
3282 title = "Production and recovery of defects in Si{C} after
3283 irradiation and deformation",
3284 journal = "J. Nucl. Mater.",
3287 pages = "1803--1808",
3291 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3292 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3293 author = "J. Chen and P. Jung and H. Klein",
3297 title = "Accumulation, dynamic annealing and thermal recovery
3298 of ion-beam-induced disorder in silicon carbide",
3299 journal = "Nucl. Instrum. Methods Phys. Res. B",
3306 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3307 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3308 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3311 @Article{bockstedte03,
3312 title = "Ab initio study of the migration of intrinsic defects
3314 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3316 journal = "Phys. Rev. B",
3323 doi = "10.1103/PhysRevB.68.205201",
3324 publisher = "American Physical Society",
3325 notes = "defect migration in sic",
3329 title = "Theoretical study of vacancy diffusion and
3330 vacancy-assisted clustering of antisites in Si{C}",
3331 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3333 journal = "Phys. Rev. B",
3340 doi = "10.1103/PhysRevB.68.155208",
3341 publisher = "American Physical Society",
3345 journal = "Telegrafiya i Telefoniya bez Provodov",
3349 author = "O. V. Lossev",
3353 title = "Luminous carborundum detector and detection effect and
3354 oscillations with crystals",
3355 journal = "Philosophical Magazine Series 7",
3358 pages = "1024--1044",
3360 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3361 author = "O. V. Lossev",
3365 journal = "Physik. Zeitschr.",
3369 author = "O. V. Lossev",
3373 journal = "Physik. Zeitschr.",
3377 author = "O. V. Lossev",
3381 journal = "Physik. Zeitschr.",
3385 author = "O. V. Lossev",
3389 title = "A note on carborundum",
3390 journal = "Electrical World",
3394 author = "H. J. Round",
3397 @Article{vashishath08,
3398 title = "Recent trends in silicon carbide device research",
3399 journal = "Mj. Int. J. Sci. Tech.",
3404 author = "Munish Vashishath and Ashoke K. Chatterjee",
3405 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3406 notes = "sic polytype electronic properties",
3410 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3412 title = "Growth and Properties of beta-Si{C} Single Crystals",
3415 journal = "Journal of Applied Physics",
3419 URL = "http://link.aip.org/link/?JAP/37/333/1",
3420 doi = "10.1063/1.1707837",
3421 notes = "sic melt growth",
3425 author = "A. E. van Arkel and J. H. de Boer",
3426 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3428 publisher = "WILEY-VCH Verlag GmbH",
3430 journal = "Z. Anorg. Chem.",
3433 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3434 doi = "10.1002/zaac.19251480133",
3435 notes = "van arkel apparatus",
3439 author = "K. Moers",
3441 journal = "Z. Anorg. Chem.",
3444 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3449 author = "J. T. Kendall",
3450 title = "Electronic Conduction in Silicon Carbide",
3453 journal = "The Journal of Chemical Physics",
3457 URL = "http://link.aip.org/link/?JCP/21/821/1",
3458 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3463 author = "J. A. Lely",
3465 journal = "Ber. Deut. Keram. Ges.",
3468 notes = "lely sublimation growth process",
3471 @Article{knippenberg63,
3472 author = "W. F. Knippenberg",
3474 journal = "Philips Res. Repts.",
3477 notes = "acheson process",
3480 @Article{hoffmann82,
3481 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3484 title = "Silicon carbide blue light emitting diodes with
3485 improved external quantum efficiency",
3488 journal = "Journal of Applied Physics",
3491 pages = "6962--6967",
3492 keywords = "light emitting diodes; silicon carbides; quantum
3493 efficiency; visible radiation; experimental data;
3494 epitaxy; fabrication; medium temperature; layers;
3495 aluminium; nitrogen; substrates; pn junctions;
3496 electroluminescence; spectra; current density;
3498 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3499 doi = "10.1063/1.330041",
3500 notes = "blue led, sublimation process",
3504 author = "Philip Neudeck",
3505 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3506 Road 44135 Cleveland OH",
3507 title = "Progress in silicon carbide semiconductor electronics
3509 journal = "Journal of Electronic Materials",
3510 publisher = "Springer Boston",
3512 keyword = "Chemistry and Materials Science",
3516 URL = "http://dx.doi.org/10.1007/BF02659688",
3517 note = "10.1007/BF02659688",
3519 notes = "sic data, advantages of 3c sic",
3522 @Article{bhatnagar93,
3523 author = "M. Bhatnagar and B. J. Baliga",
3524 journal = "Electron Devices, IEEE Transactions on",
3525 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3532 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3533 rectifiers;Si;SiC;breakdown voltages;drift region
3534 properties;output characteristics;power MOSFETs;power
3535 semiconductor devices;switching characteristics;thermal
3536 analysis;Schottky-barrier diodes;electric breakdown of
3537 solids;insulated gate field effect transistors;power
3538 transistors;semiconductor materials;silicon;silicon
3539 compounds;solid-state rectifiers;thermal analysis;",
3540 doi = "10.1109/16.199372",
3542 notes = "comparison 3c 6h sic and si devices",
3546 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3547 A. Powell and C. S. Salupo and L. G. Matus",
3548 journal = "Electron Devices, IEEE Transactions on",
3549 title = "Electrical properties of epitaxial 3{C}- and
3550 6{H}-Si{C} p-n junction diodes produced side-by-side on
3551 6{H}-Si{C} substrates",
3557 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3558 C;6H-SiC layers;6H-SiC substrates;CVD
3559 process;SiC;chemical vapor deposition;doping;electrical
3560 properties;epitaxial layers;light
3561 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3562 diodes;polytype;rectification characteristics;reverse
3563 leakage current;reverse voltages;temperature;leakage
3564 currents;power electronics;semiconductor
3565 diodes;semiconductor epitaxial layers;semiconductor
3566 growth;semiconductor materials;silicon
3567 compounds;solid-state rectifiers;substrates;vapour
3568 phase epitaxial growth;",
3569 doi = "10.1109/16.285038",
3571 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3576 author = "N. Schulze and D. L. Barrett and G. Pensl",
3578 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3579 single crystals by physical vapor transport",
3582 journal = "Applied Physics Letters",
3585 pages = "1632--1634",
3586 keywords = "silicon compounds; semiconductor materials;
3587 semiconductor growth; crystal growth from vapour;
3588 photoluminescence; Hall mobility",
3589 URL = "http://link.aip.org/link/?APL/72/1632/1",
3590 doi = "10.1063/1.121136",
3591 notes = "micropipe free 6h-sic pvt growth",
3595 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3597 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3600 journal = "Applied Physics Letters",
3604 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3605 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3606 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3607 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3609 URL = "http://link.aip.org/link/?APL/50/221/1",
3610 doi = "10.1063/1.97667",
3611 notes = "apb 3c-sic heteroepitaxy on si",
3614 @Article{shibahara86,
3615 title = "Surface morphology of cubic Si{C}(100) grown on
3616 Si(100) by chemical vapor deposition",
3617 journal = "Journal of Crystal Growth",
3624 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3625 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3626 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3628 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3631 @Article{desjardins96,
3632 author = "P. Desjardins and J. E. Greene",
3634 title = "Step-flow epitaxial growth on two-domain surfaces",
3637 journal = "Journal of Applied Physics",
3640 pages = "1423--1434",
3641 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3642 FILM GROWTH; SURFACE STRUCTURE",
3643 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3644 doi = "10.1063/1.360980",
3645 notes = "apb model",
3649 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3651 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3652 carbonization of silicon",
3655 journal = "Journal of Applied Physics",
3658 pages = "2070--2073",
3659 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3660 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3662 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3663 doi = "10.1063/1.360184",
3664 notes = "ssmbe of sic on si, lower temperatures",
3668 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3669 {MBE} using surface superstructure",
3670 journal = "Journal of Crystal Growth",
3677 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3678 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3679 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3680 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3681 notes = "gas source mbe of 3c-sic on 6h-sic",
3684 @Article{yoshinobu92,
3685 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3686 and Takashi Fuyuki and Hiroyuki Matsunami",
3688 title = "Lattice-matched epitaxial growth of single crystalline
3689 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3690 molecular beam epitaxy",
3693 journal = "Applied Physics Letters",
3697 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3698 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3699 INTERFACE STRUCTURE",
3700 URL = "http://link.aip.org/link/?APL/60/824/1",
3701 doi = "10.1063/1.107430",
3702 notes = "gas source mbe of 3c-sic on 6h-sic",
3705 @Article{yoshinobu90,
3706 title = "Atomic level control in gas source {MBE} growth of
3708 journal = "Journal of Crystal Growth",
3715 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3716 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3717 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3718 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3719 notes = "gas source mbe of 3c-sic on 3c-sic",
3723 title = "Atomic layer epitaxy controlled by surface
3724 superstructures in Si{C}",
3725 journal = "Thin Solid Films",
3732 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3733 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3734 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3736 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3741 title = "Microscopic mechanisms of accurate layer-by-layer
3742 growth of [beta]-Si{C}",
3743 journal = "Thin Solid Films",
3750 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3751 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3752 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3753 and S. Misawa and E. Sakuma and S. Yoshida",
3754 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3759 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3761 title = "Effects of gas flow ratio on silicon carbide thin film
3762 growth mode and polytype formation during gas-source
3763 molecular beam epitaxy",
3766 journal = "Applied Physics Letters",
3769 pages = "2851--2853",
3770 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3771 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3772 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3774 URL = "http://link.aip.org/link/?APL/65/2851/1",
3775 doi = "10.1063/1.112513",
3776 notes = "gas source mbe of 6h-sic on 6h-sic",
3780 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3781 title = "Heterointerface Control and Epitaxial Growth of
3782 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3783 publisher = "WILEY-VCH Verlag",
3785 journal = "physica status solidi (b)",
3788 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3793 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3794 journal = "Journal of Crystal Growth",
3801 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3802 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3803 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3804 keywords = "Reflection high-energy electron diffraction (RHEED)",
3805 keywords = "Scanning electron microscopy (SEM)",
3806 keywords = "Silicon carbide",
3807 keywords = "Silicon",
3808 keywords = "Island growth",
3809 notes = "lower temperature, 550-700",
3812 @Article{hatayama95,
3813 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3814 on Si using hydrocarbon radicals by gas source
3815 molecular beam epitaxy",
3816 journal = "Journal of Crystal Growth",
3823 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3824 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3825 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3826 and Hiroyuki Matsunami",
3830 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3831 title = "The Preference of Silicon Carbide for Growth in the
3832 Metastable Cubic Form",
3833 journal = "Journal of the American Ceramic Society",
3836 publisher = "Blackwell Publishing Ltd",
3838 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
3839 doi = "10.1111/j.1151-2916.1991.tb06811.x",
3840 pages = "2630--2633",
3841 keywords = "silicon carbide, crystal growth, crystal structure,
3842 calculations, stability",
3844 notes = "3c-sic metastable, 3c-sic preferred growth, sic
3845 polytype dft calculation refs",