2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "M. A. Capano and R. J. Trew",
45 title = "Silicon Carbide Electronic Materials and Devices",
46 journal = "MRS Bull.",
53 author = "P. S. de Laplace",
54 title = "Th\'eorie analytique des probabilit\'es",
55 series = "Oeuvres Compl\`etes de Laplace",
57 publisher = "Gauthier-Villars",
62 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
63 title = "{Atomistic modeling of brittleness in covalent
65 journal = "Phys. Rev. B",
71 doi = "10.1103/PhysRevB.76.224103",
72 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
73 longe(r)-range-interactions, brittle propagation of
74 fracture, more available potentials, universal energy
75 relation (uer), minimum range model (mrm)",
79 title = "Stress relaxation in $a-Si$ induced by ion
81 author = "H. M. Urbassek M. Koster",
82 journal = "Phys. Rev. B",
85 pages = "11219--11224",
89 doi = "10.1103/PhysRevB.62.11219",
90 publisher = "American Physical Society",
91 notes = "virial derivation for 3-body tersoff potential",
95 title = "Direct simulation of ion-beam-induced stressing and
96 amorphization of silicon",
97 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
98 journal = "Phys. Rev. B",
101 pages = "12610--12616",
105 doi = "10.1103/PhysRevB.60.12610",
106 publisher = "American Physical Society",
107 notes = "virial derivation for 3-body tersoff potential",
111 author = "Y. S. Park",
112 title = "Si{C} Materials and Devices",
113 publisher = "Academic Press",
114 address = "San Diego",
119 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
120 Calvin H. Carter Jr. and D. Asbury",
121 title = "Si{C} Seeded Boule Growth",
122 journal = "Materials Science Forum",
126 notes = "modified lely process, micropipes",
130 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
131 Thermodynamical Properties of Lennard-Jones Molecules",
132 author = "Loup Verlet",
133 journal = "Phys. Rev.",
139 doi = "10.1103/PhysRev.159.98",
140 publisher = "American Physical Society",
141 notes = "velocity verlet integration algorithm equation of
145 @Article{berendsen84,
146 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
147 Gunsteren and A. DiNola and J. R. Haak",
149 title = "Molecular dynamics with coupling to an external bath",
152 journal = "The Journal of Chemical Physics",
155 pages = "3684--3690",
156 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
157 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
158 URL = "http://link.aip.org/link/?JCP/81/3684/1",
159 doi = "10.1063/1.448118",
160 notes = "berendsen thermostat barostat",
164 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
166 title = "Molecular dynamics determination of defect energetics
167 in beta -Si{C} using three representative empirical
169 journal = "Modelling and Simulation in Materials Science and
174 URL = "http://stacks.iop.org/0965-0393/3/615",
175 notes = "comparison of tersoff, pearson and eam for defect
176 energetics in sic; (m)eam parameters for sic",
181 title = "Relationship between the embedded-atom method and
183 author = "Donald W. Brenner",
184 journal = "Phys. Rev. Lett.",
191 doi = "10.1103/PhysRevLett.63.1022",
192 publisher = "American Physical Society",
193 notes = "relation of tersoff and eam potential",
197 title = "Molecular-dynamics study of self-interstitials in
199 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
200 journal = "Phys. Rev. B",
203 pages = "9552--9558",
207 doi = "10.1103/PhysRevB.35.9552",
208 publisher = "American Physical Society",
209 notes = "selft-interstitials in silicon, stillinger-weber,
210 calculation of defect formation energy, defect
215 title = "Extended interstitials in silicon and germanium",
216 author = "H. R. Schober",
217 journal = "Phys. Rev. B",
220 pages = "13013--13015",
224 doi = "10.1103/PhysRevB.39.13013",
225 publisher = "American Physical Society",
226 notes = "stillinger-weber silicon 110 stable and metastable
227 dumbbell configuration",
231 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
232 Defect accumulation, topological features, and
234 author = "F. Gao and W. J. Weber",
235 journal = "Phys. Rev. B",
242 doi = "10.1103/PhysRevB.66.024106",
243 publisher = "American Physical Society",
244 notes = "sic intro, si cascade in 3c-sic, amorphization,
245 tersoff modified, pair correlation of amorphous sic, md
249 @Article{devanathan98,
250 title = "Computer simulation of a 10 ke{V} Si displacement
252 journal = "Nuclear Instruments and Methods in Physics Research
253 Section B: Beam Interactions with Materials and Atoms",
259 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
260 author = "R. Devanathan and W. J. Weber and T. Diaz de la
262 notes = "modified tersoff short range potential, ab initio
266 @Article{devanathan98_2,
267 title = "Displacement threshold energies in [beta]-Si{C}",
268 journal = "Journal of Nuclear Materials",
274 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
275 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
277 notes = "modified tersoff, ab initio, combined ab initio
282 title = "Si{C}/Si heteroepitaxial growth",
283 author = "M. Kitabatake",
284 journal = "Thin Solid Films",
289 notes = "md simulation, sic si heteroepitaxy, mbe",
293 title = "Intrinsic point defects in crystalline silicon:
294 Tight-binding molecular dynamics studies of
295 self-diffusion, interstitial-vacancy recombination, and
297 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
299 journal = "Phys. Rev. B",
302 pages = "14279--14289",
306 doi = "10.1103/PhysRevB.55.14279",
307 publisher = "American Physical Society",
308 notes = "si self interstitial, diffusion, tbmd",
312 title = "Tight-binding theory of native point defects in
314 author = "L. Colombo",
315 journal = "Annu. Rev. Mater. Res.",
320 doi = "10.1146/annurev.matsci.32.111601.103036",
321 publisher = "Annual Reviews",
322 notes = "si self interstitial, tbmd, virial stress",
326 title = "Ab initio and empirical-potential studies of defect
327 properties in $3{C}-Si{C}$",
328 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
330 journal = "Phys. Rev. B",
337 doi = "10.1103/PhysRevB.64.245208",
338 publisher = "American Physical Society",
339 notes = "defects in 3c-sic",
342 @Article{mattoni2002,
343 title = "Self-interstitial trapping by carbon complexes in
344 crystalline silicon",
345 author = "A. Mattoni and F. Bernardini and L. Colombo",
346 journal = "Phys. Rev. B",
353 doi = "10.1103/PhysRevB.66.195214",
354 publisher = "American Physical Society",
355 notes = "c in c-si, diffusion, interstitial configuration +
360 title = "Calculations of Silicon Self-Interstitial Defects",
361 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
363 journal = "Phys. Rev. Lett.",
366 pages = "2351--2354",
370 doi = "10.1103/PhysRevLett.83.2351",
371 publisher = "American Physical Society",
372 notes = "nice images of the defects",
376 title = "Identification of the migration path of interstitial
378 author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
379 journal = "Phys. Rev. B",
382 pages = "7439--7442",
386 doi = "10.1103/PhysRevB.50.7439",
387 publisher = "American Physical Society",
388 notes = "carbon interstitial migration path shown, 001 c-si
393 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
395 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
396 Sokrates T. Pantelides",
397 journal = "Phys. Rev. Lett.",
400 pages = "1814--1817",
404 doi = "10.1103/PhysRevLett.52.1814",
405 publisher = "American Physical Society",
406 notes = "microscopic theory diffusion silicon dft migration
411 title = "Short-range order, bulk moduli, and physical trends in
412 c-$Si1-x$$Cx$ alloys",
413 author = "P. C. Kelires",
414 journal = "Phys. Rev. B",
417 pages = "8784--8787",
421 doi = "10.1103/PhysRevB.55.8784",
422 publisher = "American Physical Society",
423 notes = "c strained si, montecarlo md, bulk moduli, next
428 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
429 Application to the $Si1-x-yGexCy$ System",
430 author = "P. C. Kelires",
431 journal = "Phys. Rev. Lett.",
434 pages = "1114--1117",
438 doi = "10.1103/PhysRevLett.75.1114",
439 publisher = "American Physical Society",
440 notes = "mc md, strain compensation in si ge by c insertion",
444 title = "{EPR} Observation of the Isolated Interstitial Carbon
446 author = "G. D. Watkins and K. L. Brower",
447 journal = "Phys. Rev. Lett.",
450 pages = "1329--1332",
454 doi = "10.1103/PhysRevLett.36.1329",
455 publisher = "American Physical Society",
456 notes = "epr observations of 100 interstitial carbon atom in
461 title = "{EPR} identification of the single-acceptor state of
462 interstitial carbon in silicon",
463 author = "G. D. Watkins L. W. Song",
464 journal = "Phys. Rev. B",
467 pages = "5759--5764",
471 doi = "10.1103/PhysRevB.42.5759",
472 publisher = "American Physical Society",
476 title = "Carbon incorporation into Si at high concentrations by
477 ion implantation and solid phase epitaxy",
478 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
479 Picraux and J. K. Watanabe and J. W. Mayer",
480 journal = "J. Appl. Phys.",
485 doi = "10.1063/1.360806",
486 notes = "strained silicon, carbon supersaturation",
489 @Article{laveant2002,
490 title = "Epitaxy of carbon-rich silicon with {MBE}",
491 author = "P. Laveant and G. Gerth and P. Werner and U.
493 journal = "Materials Science and Engineering B",
497 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
498 notes = "low c in si, tensile stress to compensate compressive
499 stress, avoid sic precipitation",
503 author = "P. Werner and S. Eichler and G. Mariani and R.
504 K{\"{o}}gler and W. Skorupa",
505 title = "Investigation of {C}[sub x]Si defects in {C} implanted
506 silicon by transmission electron microscopy",
509 journal = "Applied Physics Letters",
513 keywords = "silicon; ion implantation; carbon; crystal defects;
514 transmission electron microscopy; annealing; positron
515 annihilation; secondary ion mass spectroscopy; buried
516 layers; precipitation",
517 URL = "http://link.aip.org/link/?APL/70/252/1",
518 doi = "10.1063/1.118381",
519 notes = "si-c complexes, agglomerate, sic in si matrix, sic
524 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
525 Picraux and J. K. Watanabe and J. W. Mayer",
527 title = "Precipitation and relaxation in strained Si[sub 1 -
528 y]{C}[sub y]/Si heterostructures",
531 journal = "Journal of Applied Physics",
534 pages = "3656--3668",
535 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
536 URL = "http://link.aip.org/link/?JAP/76/3656/1",
537 doi = "10.1063/1.357429",
538 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
542 title = "Prospects for device implementation of wide band gap
544 author = "J. H. Edgar",
545 journal = "J. Mater. Res.",
550 doi = "10.1557/JMR.1992.0235",
551 notes = "properties wide band gap semiconductor, sic
555 @Article{zirkelbach2007,
556 title = "Monte Carlo simulation study of a selforganisation
557 process leading to ordered precipitate structures",
558 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
560 journal = "Nucl. Instr. and Meth. B",
567 doi = "doi:10.1016/j.nimb.2006.12.118",
568 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
572 @Article{zirkelbach2006,
573 title = "Monte-Carlo simulation study of the self-organization
574 of nanometric amorphous precipitates in regular arrays
575 during ion irradiation",
576 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
578 journal = "Nucl. Instr. and Meth. B",
585 doi = "doi:10.1016/j.nimb.2005.08.162",
586 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
590 @Article{zirkelbach2005,
591 title = "Modelling of a selforganization process leading to
592 periodic arrays of nanometric amorphous precipitates by
594 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
596 journal = "Comp. Mater. Sci.",
603 doi = "doi:10.1016/j.commatsci.2004.12.016",
604 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
609 title = "High-dose carbon implantations into silicon:
610 fundamental studies for new technological tricks",
611 author = "J. K. N. Lindner",
612 journal = "Appl. Phys. A",
616 doi = "10.1007/s00339-002-2062-8",
617 notes = "ibs, burried sic layers",
621 author = "B. J. Alder and T. E. Wainwright",
622 title = "Phase Transition for a Hard Sphere System",
625 journal = "The Journal of Chemical Physics",
628 pages = "1208--1209",
629 URL = "http://link.aip.org/link/?JCP/27/1208/1",
630 doi = "10.1063/1.1743957",
634 author = "B. J. Alder and T. E. Wainwright",
635 title = "Studies in Molecular Dynamics. {I}. General Method",
638 journal = "The Journal of Chemical Physics",
642 URL = "http://link.aip.org/link/?JCP/31/459/1",
643 doi = "10.1063/1.1730376",
646 @Article{tersoff_si1,
647 title = "New empirical model for the structural properties of
649 author = "J. Tersoff",
650 journal = "Phys. Rev. Lett.",
657 doi = "10.1103/PhysRevLett.56.632",
658 publisher = "American Physical Society",
661 @Article{tersoff_si2,
662 title = "New empirical approach for the structure and energy of
664 author = "J. Tersoff",
665 journal = "Phys. Rev. B",
668 pages = "6991--7000",
672 doi = "10.1103/PhysRevB.37.6991",
673 publisher = "American Physical Society",
676 @Article{tersoff_si3,
677 title = "Empirical interatomic potential for silicon with
678 improved elastic properties",
679 author = "J. Tersoff",
680 journal = "Phys. Rev. B",
683 pages = "9902--9905",
687 doi = "10.1103/PhysRevB.38.9902",
688 publisher = "American Physical Society",
692 title = "Empirical Interatomic Potential for Carbon, with
693 Applications to Amorphous Carbon",
694 author = "J. Tersoff",
695 journal = "Phys. Rev. Lett.",
698 pages = "2879--2882",
702 doi = "10.1103/PhysRevLett.61.2879",
703 publisher = "American Physical Society",
707 title = "Modeling solid-state chemistry: Interatomic potentials
708 for multicomponent systems",
709 author = "J. Tersoff",
710 journal = "Phys. Rev. B",
713 pages = "5566--5568",
717 doi = "10.1103/PhysRevB.39.5566",
718 publisher = "American Physical Society",
722 title = "Point defects and dopant diffusion in silicon",
723 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
724 journal = "Rev. Mod. Phys.",
731 doi = "10.1103/RevModPhys.61.289",
732 publisher = "American Physical Society",
736 title = "Silicon carbide: synthesis and processing",
737 journal = "Nuclear Instruments and Methods in Physics Research
738 Section B: Beam Interactions with Materials and Atoms",
743 note = "Radiation Effects in Insulators",
745 doi = "DOI: 10.1016/0168-583X(96)00065-1",
746 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
751 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
752 Lin and B. Sverdlov and M. Burns",
754 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
755 ZnSe-based semiconductor device technologies",
758 journal = "Journal of Applied Physics",
761 pages = "1363--1398",
762 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
763 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
764 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
766 URL = "http://link.aip.org/link/?JAP/76/1363/1",
767 doi = "10.1063/1.358463",
771 author = "Noch Unbekannt",
772 title = "How to find references",
773 journal = "Journal of Applied References",
780 title = "Atomistic simulation of thermomechanical properties of
782 author = "Meijie Tang and Sidney Yip",
783 journal = "Phys. Rev. B",
786 pages = "15150--15159",
790 doi = "10.1103/PhysRevB.52.15150",
791 notes = "modified tersoff, scale cutoff with volume",
792 publisher = "American Physical Society",
796 title = "Silicon carbide as a new {MEMS} technology",
797 journal = "Sensors and Actuators A: Physical",
803 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
804 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
805 author = "Pasqualina M. Sarro",
807 keywords = "Silicon carbide",
808 keywords = "Micromachining",
809 keywords = "Mechanical stress",
813 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
814 semiconductor for high-temperature applications: {A}
816 journal = "Solid-State Electronics",
819 pages = "1409--1422",
822 doi = "DOI: 10.1016/0038-1101(96)00045-7",
823 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
824 author = "J. B. Casady and R. W. Johnson",
827 @Article{giancarli98,
828 title = "Design requirements for Si{C}/Si{C} composites
829 structural material in fusion power reactor blankets",
830 journal = "Fusion Engineering and Design",
836 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
837 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
838 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
839 Marois and N. B. Morley and J. F. Salavy",
843 title = "Electrical and optical characterization of Si{C}",
844 journal = "Physica B: Condensed Matter",
850 doi = "DOI: 10.1016/0921-4526(93)90249-6",
851 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
852 author = "G. Pensl and W. J. Choyke",
856 title = "Investigation of growth processes of ingots of silicon
857 carbide single crystals",
858 journal = "Journal of Crystal Growth",
863 notes = "modifief lely process",
865 doi = "DOI: 10.1016/0022-0248(78)90169-0",
866 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
867 author = "Yu. M. Tairov and V. F. Tsvetkov",
871 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
873 title = "Growth and Characterization of Cubic Si{C}
874 Single-Crystal Films on Si",
877 journal = "Journal of The Electrochemical Society",
880 pages = "1558--1565",
881 keywords = "semiconductor materials; silicon compounds; carbon
882 compounds; crystal morphology; electron mobility",
883 URL = "http://link.aip.org/link/?JES/134/1558/1",
884 doi = "10.1149/1.2100708",
885 notes = "blue light emitting diodes (led)",
889 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
890 and Hiroyuki Matsunami",
891 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
895 journal = "Journal of Applied Physics",
899 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
900 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
902 URL = "http://link.aip.org/link/?JAP/73/726/1",
903 doi = "10.1063/1.353329",
907 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
908 J. Choyke and J. L. Bradshaw and L. Henderson and M.
909 Yoganathan and J. Yang and P. Pirouz",
911 title = "Growth of improved quality 3{C}-Si{C} films on
912 6{H}-Si{C} substrates",
915 journal = "Applied Physics Letters",
918 pages = "1353--1355",
919 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
920 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
921 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
923 URL = "http://link.aip.org/link/?APL/56/1353/1",
924 doi = "10.1063/1.102512",