2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 author = "M. A. Capano and R. J. Trew",
45 title = "Silicon Carbide Electronic Materials and Devices",
46 journal = "MRS Bull.",
53 author = "P. S. de Laplace",
54 title = "Th\'eorie analytique des probabilit\'es",
55 series = "Oeuvres Compl\`etes de Laplace",
57 publisher = "Gauthier-Villars",
62 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
63 title = "{Atomistic modeling of brittleness in covalent
65 journal = "Phys. Rev. B",
71 doi = "10.1103/PhysRevB.76.224103",
72 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
73 longe(r)-range-interactions, brittle propagation of
74 fracture, more available potentials, universal energy
75 relation (uer), minimum range model (mrm)",
79 title = "Stress relaxation in $a-Si$ induced by ion
81 author = "H. M. Urbassek M. Koster",
82 journal = "Phys. Rev. B",
85 pages = "11219--11224",
89 doi = "10.1103/PhysRevB.62.11219",
90 publisher = "American Physical Society",
91 notes = "virial derivation for 3-body tersoff potential",
95 title = "Direct simulation of ion-beam-induced stressing and
96 amorphization of silicon",
97 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
98 journal = "Phys. Rev. B",
101 pages = "12610--12616",
105 doi = "10.1103/PhysRevB.60.12610",
106 publisher = "American Physical Society",
107 notes = "virial derivation for 3-body tersoff potential",
111 author = "Y. S. Park",
112 title = "Si{C} Materials and Devices",
113 publisher = "Academic Press",
114 address = "San Diego",
119 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
120 Calvin H. Carter Jr. and D. Asbury",
121 title = "Si{C} Seeded Boule Growth",
122 journal = "Materials Science Forum",
126 notes = "modified lely process, micropipes",
130 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
131 Thermodynamical Properties of Lennard-Jones Molecules",
132 author = "Loup Verlet",
133 journal = "Phys. Rev.",
139 doi = "10.1103/PhysRev.159.98",
140 publisher = "American Physical Society",
141 notes = "velocity verlet integration algorithm equation of
145 @Article{berendsen84,
146 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
147 Gunsteren and A. DiNola and J. R. Haak",
149 title = "Molecular dynamics with coupling to an external bath",
152 journal = "The Journal of Chemical Physics",
155 pages = "3684--3690",
156 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
157 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
158 URL = "http://link.aip.org/link/?JCP/81/3684/1",
159 doi = "10.1063/1.448118",
160 notes = "berendsen thermostat barostat",
164 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
166 title = "Molecular dynamics determination of defect energetics
167 in beta -Si{C} using three representative empirical
169 journal = "Modelling and Simulation in Materials Science and
174 URL = "http://stacks.iop.org/0965-0393/3/615",
175 notes = "comparison of tersoff, pearson and eam for defect
176 energetics in sic; (m)eam parameters for sic",
181 title = "Relationship between the embedded-atom method and
183 author = "Donald W. Brenner",
184 journal = "Phys. Rev. Lett.",
191 doi = "10.1103/PhysRevLett.63.1022",
192 publisher = "American Physical Society",
193 notes = "relation of tersoff and eam potential",
197 title = "Molecular-dynamics study of self-interstitials in
199 author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
200 journal = "Phys. Rev. B",
203 pages = "9552--9558",
207 doi = "10.1103/PhysRevB.35.9552",
208 publisher = "American Physical Society",
209 notes = "selft-interstitials in silicon, stillinger-weber,
210 calculation of defect formation energy, defect
215 title = "Extended interstitials in silicon and germanium",
216 author = "H. R. Schober",
217 journal = "Phys. Rev. B",
220 pages = "13013--13015",
224 doi = "10.1103/PhysRevB.39.13013",
225 publisher = "American Physical Society",
226 notes = "stillinger-weber silicon 110 stable and metastable
227 dumbbell configuration",
231 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
232 Defect accumulation, topological features, and
234 author = "F. Gao and W. J. Weber",
235 journal = "Phys. Rev. B",
242 doi = "10.1103/PhysRevB.66.024106",
243 publisher = "American Physical Society",
244 notes = "sic intro, si cascade in 3c-sic, amorphization,
245 tersoff modified, pair correlation of amorphous sic, md
249 @Article{devanathan98,
250 title = "Computer simulation of a 10 ke{V} Si displacement
252 journal = "Nuclear Instruments and Methods in Physics Research
253 Section B: Beam Interactions with Materials and Atoms",
259 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
260 author = "R. Devanathan and W. J. Weber and T. Diaz de la
262 notes = "modified tersoff short range potential, ab initio
266 @Article{devanathan98_2,
267 title = "Displacement threshold energies in [beta]-Si{C}",
268 journal = "Journal of Nuclear Materials",
274 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
275 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
277 notes = "modified tersoff, ab initio, combined ab initio
282 title = "Si{C}/Si heteroepitaxial growth",
283 author = "M. Kitabatake",
284 journal = "Thin Solid Films",
289 notes = "md simulation, sic si heteroepitaxy, mbe",
293 title = "Intrinsic point defects in crystalline silicon:
294 Tight-binding molecular dynamics studies of
295 self-diffusion, interstitial-vacancy recombination, and
297 author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
298 journal = "Phys. Rev. B",
301 pages = "14279--14289",
305 doi = "10.1103/PhysRevB.55.14279",
306 publisher = "American Physical Society",
307 notes = "si self interstitial, diffusion, tbmd",
311 title = "Tight-binding theory of native point defects in
313 author = "L. Colombo",
314 journal = "Annu. Rev. Mater. Res.",
319 doi = "10.1146/annurev.matsci.32.111601.103036",
320 publisher = "Annual Reviews",
321 notes = "si self interstitial, tbmd, virial stress",
325 title = "Ab initio and empirical-potential studies of defect
326 properties in $3{C}-Si{C}$",
327 author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
328 journal = "Phys. Rev. B",
335 doi = "10.1103/PhysRevB.64.245208",
336 publisher = "American Physical Society",
337 notes = "defects in 3c-sic",
340 @Article{mattoni2002,
341 title = "Self-interstitial trapping by carbon complexes in
342 crystalline silicon",
343 author = "A. Mattoni and F. Bernardini and L. Colombo",
344 journal = "Phys. Rev. B",
351 doi = "10.1103/PhysRevB.66.195214",
352 publisher = "American Physical Society",
353 notes = "c in c-si, diffusion, interstitial configuration +
358 title = "Calculations of Silicon Self-Interstitial Defects",
359 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
361 journal = "Phys. Rev. Lett.",
364 pages = "2351--2354",
368 doi = "10.1103/PhysRevLett.83.2351",
369 publisher = "American Physical Society",
370 notes = "nice images of the defects",
374 title = "Identification of the migration path of interstitial
376 author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
377 journal = "Phys. Rev. B",
380 pages = "7439--7442",
384 doi = "10.1103/PhysRevB.50.7439",
385 publisher = "American Physical Society",
386 notes = "carbon interstitial migration path shown, 001 c-si
391 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
393 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
394 Sokrates T. Pantelides",
395 journal = "Phys. Rev. Lett.",
398 pages = "1814--1817",
402 doi = "10.1103/PhysRevLett.52.1814",
403 publisher = "American Physical Society",
404 notes = "microscopic theory diffusion silicon dft migration
409 title = "Short-range order, bulk moduli, and physical trends in
410 c-$Si1-x$$Cx$ alloys",
411 author = "P. C. Kelires",
412 journal = "Phys. Rev. B",
415 pages = "8784--8787",
419 doi = "10.1103/PhysRevB.55.8784",
420 publisher = "American Physical Society",
421 notes = "c strained si, montecarlo md, bulk moduli, next
426 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
427 Application to the $Si1-x-yGexCy$ System",
428 author = "P. C. Kelires",
429 journal = "Phys. Rev. Lett.",
432 pages = "1114--1117",
436 doi = "10.1103/PhysRevLett.75.1114",
437 publisher = "American Physical Society",
438 notes = "mc md, strain compensation in si ge by c insertion",
442 title = "{EPR} Observation of the Isolated Interstitial Carbon
444 author = "G. D. Watkins and K. L. Brower",
445 journal = "Phys. Rev. Lett.",
448 pages = "1329--1332",
452 doi = "10.1103/PhysRevLett.36.1329",
453 publisher = "American Physical Society",
454 notes = "epr observations of 100 interstitial carbon atom in
459 title = "{EPR} identification of the single-acceptor state of
460 interstitial carbon in silicon",
461 author = "G. D. Watkins L. W. Song",
462 journal = "Phys. Rev. B",
465 pages = "5759--5764",
469 doi = "10.1103/PhysRevB.42.5759",
470 publisher = "American Physical Society",
474 title = "Carbon incorporation into Si at high concentrations by
475 ion implantation and solid phase epitaxy",
476 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
477 Picraux and J. K. Watanabe and J. W. Mayer",
478 journal = "J. Appl. Phys.",
483 doi = "10.1063/1.360806",
484 notes = "strained silicon, carbon supersaturation",
487 @Article{laveant2002,
488 title = "Epitaxy of carbon-rich silicon with {MBE}",
489 author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
490 journal = "Materials Science and Engineering B",
494 keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
495 notes = "low c in si, tensile stress to compensate compressive
496 stress, avoid sic precipitation",
500 author = "P. Werner and S. Eichler and G. Mariani and R.
501 K{\"{o}}gler and W. Skorupa",
502 title = "Investigation of {C}[sub x]Si defects in {C} implanted
503 silicon by transmission electron microscopy",
506 journal = "Applied Physics Letters",
510 keywords = "silicon; ion implantation; carbon; crystal defects;
511 transmission electron microscopy; annealing; positron
512 annihilation; secondary ion mass spectroscopy; buried
513 layers; precipitation",
514 URL = "http://link.aip.org/link/?APL/70/252/1",
515 doi = "10.1063/1.118381",
516 notes = "si-c complexes, agglomerate, sic in si matrix, sic
521 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
522 Picraux and J. K. Watanabe and J. W. Mayer",
524 title = "Precipitation and relaxation in strained Si[sub 1 -
525 y]{C}[sub y]/Si heterostructures",
528 journal = "Journal of Applied Physics",
531 pages = "3656--3668",
532 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
533 URL = "http://link.aip.org/link/?JAP/76/3656/1",
534 doi = "10.1063/1.357429",
535 notes = "strained si-c to 3c-sic, carbon nucleation + refs",
539 title = "Prospects for device implementation of wide band gap
541 author = "J. H. Edgar",
542 journal = "J. Mater. Res.",
547 doi = "10.1557/JMR.1992.0235",
548 notes = "properties wide band gap semiconductor, sic
552 @Article{zirkelbach2007,
553 title = "Monte Carlo simulation study of a selforganisation
554 process leading to ordered precipitate structures",
555 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
557 journal = "Nucl. Instr. and Meth. B",
564 doi = "doi:10.1016/j.nimb.2006.12.118",
565 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
569 @Article{zirkelbach2006,
570 title = "Monte-Carlo simulation study of the self-organization
571 of nanometric amorphous precipitates in regular arrays
572 during ion irradiation",
573 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
575 journal = "Nucl. Instr. and Meth. B",
582 doi = "doi:10.1016/j.nimb.2005.08.162",
583 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
587 @Article{zirkelbach2005,
588 title = "Modelling of a selforganization process leading to
589 periodic arrays of nanometric amorphous precipitates by
591 author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
593 journal = "Comp. Mater. Sci.",
600 doi = "doi:10.1016/j.commatsci.2004.12.016",
601 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
606 title = "High-dose carbon implantations into silicon:
607 fundamental studies for new technological tricks",
608 author = "J. K. N. Lindner",
609 journal = "Appl. Phys. A",
613 doi = "10.1007/s00339-002-2062-8",
614 notes = "ibs, burried sic layers",
618 author = "B. J. Alder and T. E. Wainwright",
619 title = "Phase Transition for a Hard Sphere System",
622 journal = "The Journal of Chemical Physics",
625 pages = "1208--1209",
626 URL = "http://link.aip.org/link/?JCP/27/1208/1",
627 doi = "10.1063/1.1743957",
631 author = "B. J. Alder and T. E. Wainwright",
632 title = "Studies in Molecular Dynamics. {I}. General Method",
635 journal = "The Journal of Chemical Physics",
639 URL = "http://link.aip.org/link/?JCP/31/459/1",
640 doi = "10.1063/1.1730376",
643 @Article{tersoff_si1,
644 title = "New empirical model for the structural properties of
646 author = "J. Tersoff",
647 journal = "Phys. Rev. Lett.",
654 doi = "10.1103/PhysRevLett.56.632",
655 publisher = "American Physical Society",
658 @Article{tersoff_si2,
659 title = "New empirical approach for the structure and energy of
661 author = "J. Tersoff",
662 journal = "Phys. Rev. B",
665 pages = "6991--7000",
669 doi = "10.1103/PhysRevB.37.6991",
670 publisher = "American Physical Society",
673 @Article{tersoff_si3,
674 title = "Empirical interatomic potential for silicon with
675 improved elastic properties",
676 author = "J. Tersoff",
677 journal = "Phys. Rev. B",
680 pages = "9902--9905",
684 doi = "10.1103/PhysRevB.38.9902",
685 publisher = "American Physical Society",
689 title = "Empirical Interatomic Potential for Carbon, with
690 Applications to Amorphous Carbon",
691 author = "J. Tersoff",
692 journal = "Phys. Rev. Lett.",
695 pages = "2879--2882",
699 doi = "10.1103/PhysRevLett.61.2879",
700 publisher = "American Physical Society",
704 title = "Modeling solid-state chemistry: Interatomic potentials
705 for multicomponent systems",
706 author = "J. Tersoff",
707 journal = "Phys. Rev. B",
710 pages = "5566--5568",
714 doi = "10.1103/PhysRevB.39.5566",
715 publisher = "American Physical Society",
719 title = "Point defects and dopant diffusion in silicon",
720 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
721 journal = "Rev. Mod. Phys.",
728 doi = "10.1103/RevModPhys.61.289",
729 publisher = "American Physical Society",
733 title = "Silicon carbide: synthesis and processing",
734 journal = "Nuclear Instruments and Methods in Physics Research
735 Section B: Beam Interactions with Materials and Atoms",
740 note = "Radiation Effects in Insulators",
742 doi = "DOI: 10.1016/0168-583X(96)00065-1",
743 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
748 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
749 Lin and B. Sverdlov and M. Burns",
751 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
752 ZnSe-based semiconductor device technologies",
755 journal = "Journal of Applied Physics",
758 pages = "1363--1398",
759 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
760 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
761 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
763 URL = "http://link.aip.org/link/?JAP/76/1363/1",
764 doi = "10.1063/1.358463",
768 author = "Noch Unbekannt",
769 title = "How to find references",
770 journal = "Journal of Applied References",
777 title = "Atomistic simulation of thermomechanical properties of
779 author = "Meijie Tang and Sidney Yip",
780 journal = "Phys. Rev. B",
783 pages = "15150--15159",
787 doi = "10.1103/PhysRevB.52.15150",
788 notes = "modified tersoff, scale cutoff with volume",
789 publisher = "American Physical Society",
793 title = "Silicon carbide as a new {MEMS} technology",
794 journal = "Sensors and Actuators A: Physical",
800 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
801 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
802 author = "Pasqualina M. Sarro",
804 keywords = "Silicon carbide",
805 keywords = "Micromachining",
806 keywords = "Mechanical stress",
810 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
811 semiconductor for high-temperature applications: {A}
813 journal = "Solid-State Electronics",
816 pages = "1409--1422",
819 doi = "DOI: 10.1016/0038-1101(96)00045-7",
820 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
821 author = "J. B. Casady and R. W. Johnson",
824 @Article{giancarli98,
825 title = "Design requirements for Si{C}/Si{C} composites
826 structural material in fusion power reactor blankets",
827 journal = "Fusion Engineering and Design",
833 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
834 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
835 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
836 Marois and N. B. Morley and J. F. Salavy",
840 title = "Electrical and optical characterization of Si{C}",
841 journal = "Physica B: Condensed Matter",
847 doi = "DOI: 10.1016/0921-4526(93)90249-6",
848 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
849 author = "G. Pensl and W. J. Choyke",
853 title = "Investigation of growth processes of ingots of silicon
854 carbide single crystals",
855 journal = "Journal of Crystal Growth",
860 notes = "modifief lely process",
862 doi = "DOI: 10.1016/0022-0248(78)90169-0",
863 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
864 author = "Yu. M. Tairov and V. F. Tsvetkov",