2 % bibliography database
5 @Article{schroedinger26,
6 author = "E. Schrödinger",
7 title = "Quantisierung als Eigenwertproblem",
8 journal = "Ann. Phys. (Leipzig)",
11 publisher = "WILEY-VCH Verlag",
13 URL = "http://dx.doi.org/10.1002/andp.19263840404",
14 doi = "10.1002/andp.19263840404",
20 author = "Felix Bloch",
21 affiliation = "Institut d. Universität f. theor. Physik Leipzig",
22 title = "Über die Quantenmechanik der Elektronen in
25 publisher = "Springer Berlin / Heidelberg",
27 keyword = "Physics and Astronomy",
31 URL = "http://dx.doi.org/10.1007/BF01339455",
32 note = "10.1007/BF01339455",
36 @Article{albe_sic_pot,
37 author = "Paul Erhart and Karsten Albe",
38 title = "Analytical potential for atomistic simulations of
39 silicon, carbon, and silicon carbide",
42 journal = "Phys. Rev. B",
48 notes = "alble reparametrization, analytical bond oder
50 keywords = "silicon; elemental semiconductors; carbon; silicon
51 compounds; wide band gap semiconductors; elasticity;
52 enthalpy; point defects; crystallographic shear; atomic
54 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
55 doi = "10.1103/PhysRevB.71.035211",
59 title = "The role of thermostats in modeling vapor phase
60 condensation of silicon nanoparticles",
61 journal = "Appl. Surf. Sci.",
66 note = "EMRS 2003 Symposium F, Nanostructures from Clusters",
68 doi = "DOI: 10.1016/j.apsusc.2003.11.003",
69 URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738",
70 author = "Paul Erhart and Karsten Albe",
74 title = "Modeling the metal-semiconductor interaction:
75 Analytical bond-order potential for platinum-carbon",
76 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
77 journal = "Phys. Rev. B",
84 doi = "10.1103/PhysRevB.65.195124",
85 publisher = "American Physical Society",
86 notes = "derivation of albe bond order formalism",
90 title = "Vibrational absorption of carbon in silicon",
91 journal = "J. Phys. Chem. Solids",
98 doi = "DOI: 10.1016/0022-3697(65)90166-6",
99 URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
100 author = "R. C. Newman and J. B. Willis",
101 notes = "c impurity dissolved as substitutional c in si",
105 author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
108 title = "Effect of Carbon on the Lattice Parameter of Silicon",
111 journal = "J. Appl. Phys.",
114 pages = "4365--4368",
115 URL = "http://link.aip.org/link/?JAP/39/4365/1",
116 doi = "10.1063/1.1656977",
117 notes = "lattice contraction due to subst c",
121 title = "The solubility of carbon in pulled silicon crystals",
122 journal = "J. Phys. Chem. Solids",
125 pages = "1211--1219",
129 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
130 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
131 author = "A. R. Bean and R. C. Newman",
132 notes = "experimental solubility data of carbon in silicon",
136 author = "M. A. Capano and R. J. Trew",
137 title = "Silicon carbide electronic materials and devices",
138 journal = "MRS Bull.",
143 publisher = "MATERIALS RESEARCH SOCIETY",
146 @Article{capano97_old,
147 author = "M. A. Capano and R. J. Trew",
148 title = "Silicon Carbide Electronic Materials and Devices",
149 journal = "MRS Bull.",
156 author = "G. R. Fisher and P. Barnes",
157 title = "Towards a unified view of polytypism in silicon
159 journal = "Philos. Mag. B",
163 notes = "sic polytypes",
167 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
168 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
169 Serre and A. Perez-Rodriguez",
170 title = "Synthesis of nano-sized Si{C} precipitates in Si by
171 simultaneous dual-beam implantation of {C}+ and Si+
173 journal = "Appl. Phys. A",
178 URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/",
179 notes = "dual implantation, sic prec enhanced by vacancies,
180 precipitation by interstitial and substitutional
181 carbon, both mechanisms explained + refs",
185 title = "Carbon-mediated effects in silicon and in
186 silicon-related materials",
187 journal = "Mater. Chem. Phys.",
194 doi = "DOI: 10.1016/0254-0584(95)01673-I",
195 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
196 author = "W. Skorupa and R. A. Yankov",
197 notes = "review of silicon carbon compound",
201 author = "P. S. de Laplace",
202 title = "Th\'eorie analytique des probabilit\'es",
203 series = "Oeuvres Compl\`etes de Laplace",
205 publisher = "Gauthier-Villars",
209 @Article{mattoni2007,
210 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
211 title = "{Atomistic modeling of brittleness in covalent
213 journal = "Phys. Rev. B",
219 doi = "10.1103/PhysRevB.76.224103",
220 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
221 longe(r)-range-interactions, brittle propagation of
222 fracture, more available potentials, universal energy
223 relation (uer), minimum range model (mrm)",
227 title = "Comparative study of silicon empirical interatomic
229 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
230 journal = "Phys. Rev. B",
233 pages = "2250--2279",
237 doi = "10.1103/PhysRevB.46.2250",
238 publisher = "American Physical Society",
239 notes = "comparison of classical potentials for si",
243 title = "Stress relaxation in $a-Si$ induced by ion
245 author = "H. M. Urbassek M. Koster",
246 journal = "Phys. Rev. B",
249 pages = "11219--11224",
253 doi = "10.1103/PhysRevB.62.11219",
254 publisher = "American Physical Society",
255 notes = "virial derivation for 3-body tersoff potential",
258 @Article{breadmore99,
259 title = "Direct simulation of ion-beam-induced stressing and
260 amorphization of silicon",
261 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
262 journal = "Phys. Rev. B",
265 pages = "12610--12616",
269 doi = "10.1103/PhysRevB.60.12610",
270 publisher = "American Physical Society",
271 notes = "virial derivation for 3-body tersoff potential",
275 title = "First-Principles Calculation of Stress",
276 author = "O. H. Nielsen and Richard M. Martin",
277 journal = "Phys. Rev. Lett.",
284 doi = "10.1103/PhysRevLett.50.697",
285 publisher = "American Physical Society",
286 notes = "generalization of virial theorem",
290 title = "Quantum-mechanical theory of stress and force",
291 author = "O. H. Nielsen and Richard M. Martin",
292 journal = "Phys. Rev. B",
295 pages = "3780--3791",
299 doi = "10.1103/PhysRevB.32.3780",
300 publisher = "American Physical Society",
301 notes = "dft virial stress and forces",
305 author = "Henri Moissan",
306 title = "Nouvelles recherches sur la météorité de Cañon
308 journal = "C. R. Acad. Sci.",
315 author = "Y. S. Park",
316 title = "Si{C} Materials and Devices",
317 publisher = "Academic Press",
318 address = "San Diego",
323 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
324 Calvin H. Carter Jr. and D. Asbury",
325 title = "Si{C} Seeded Boule Growth",
326 journal = "Mater. Sci. Forum",
330 notes = "modified lely process, micropipes",
334 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
335 Thermodynamical Properties of Lennard-Jones Molecules",
336 author = "Loup Verlet",
337 journal = "Phys. Rev.",
343 doi = "10.1103/PhysRev.159.98",
344 publisher = "American Physical Society",
345 notes = "velocity verlet integration algorithm equation of
349 @Article{berendsen84,
350 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
351 Gunsteren and A. DiNola and J. R. Haak",
353 title = "Molecular dynamics with coupling to an external bath",
356 journal = "J. Chem. Phys.",
359 pages = "3684--3690",
360 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
361 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
362 URL = "http://link.aip.org/link/?JCP/81/3684/1",
363 doi = "10.1063/1.448118",
364 notes = "berendsen thermostat barostat",
368 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
370 title = "Molecular dynamics determination of defect energetics
371 in beta -Si{C} using three representative empirical
373 journal = "Modell. Simul. Mater. Sci. Eng.",
377 URL = "http://stacks.iop.org/0965-0393/3/615",
378 notes = "comparison of tersoff, pearson and eam for defect
379 energetics in sic; (m)eam parameters for sic",
384 title = "Relationship between the embedded-atom method and
386 author = "Donald W. Brenner",
387 journal = "Phys. Rev. Lett.",
394 doi = "10.1103/PhysRevLett.63.1022",
395 publisher = "American Physical Society",
396 notes = "relation of tersoff and eam potential",
400 title = "Molecular-dynamics study of self-interstitials in
402 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
403 journal = "Phys. Rev. B",
406 pages = "9552--9558",
410 doi = "10.1103/PhysRevB.35.9552",
411 publisher = "American Physical Society",
412 notes = "selft-interstitials in silicon, stillinger-weber,
413 calculation of defect formation energy, defect
418 title = "Extended interstitials in silicon and germanium",
419 author = "H. R. Schober",
420 journal = "Phys. Rev. B",
423 pages = "13013--13015",
427 doi = "10.1103/PhysRevB.39.13013",
428 publisher = "American Physical Society",
429 notes = "stillinger-weber silicon 110 stable and metastable
430 dumbbell configuration",
434 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
435 Defect accumulation, topological features, and
437 author = "F. Gao and W. J. Weber",
438 journal = "Phys. Rev. B",
445 doi = "10.1103/PhysRevB.66.024106",
446 publisher = "American Physical Society",
447 notes = "sic intro, si cascade in 3c-sic, amorphization,
448 tersoff modified, pair correlation of amorphous sic, md
452 @Article{devanathan98,
453 title = "Computer simulation of a 10 ke{V} Si displacement
455 journal = "Nucl. Instrum. Methods Phys. Res. B",
461 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
462 author = "R. Devanathan and W. J. Weber and T. Diaz de la
464 notes = "modified tersoff short range potential, ab initio
468 @Article{devanathan98_2,
469 title = "Displacement threshold energies in [beta]-Si{C}",
470 journal = "J. Nucl. Mater.",
476 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
477 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
479 notes = "modified tersoff, ab initio, combined ab initio
483 @Article{kitabatake00,
484 title = "Si{C}/Si heteroepitaxial growth",
485 author = "M. Kitabatake",
486 journal = "Thin Solid Films",
491 notes = "md simulation, sic si heteroepitaxy, mbe",
495 title = "Intrinsic point defects in crystalline silicon:
496 Tight-binding molecular dynamics studies of
497 self-diffusion, interstitial-vacancy recombination, and
499 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
501 journal = "Phys. Rev. B",
504 pages = "14279--14289",
508 doi = "10.1103/PhysRevB.55.14279",
509 publisher = "American Physical Society",
510 notes = "si self interstitial, diffusion, tbmd",
514 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
517 title = "A kinetic Monte--Carlo study of the effective
518 diffusivity of the silicon self-interstitial in the
519 presence of carbon and boron",
522 journal = "J. Appl. Phys.",
525 pages = "1963--1967",
526 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
527 CARBON ADDITIONS; BORON ADDITIONS; elemental
528 semiconductors; self-diffusion",
529 URL = "http://link.aip.org/link/?JAP/84/1963/1",
530 doi = "10.1063/1.368328",
531 notes = "kinetic monte carlo of si self interstitial
536 title = "Barrier to Migration of the Silicon
538 author = "Y. Bar-Yam and J. D. Joannopoulos",
539 journal = "Phys. Rev. Lett.",
542 pages = "1129--1132",
546 doi = "10.1103/PhysRevLett.52.1129",
547 publisher = "American Physical Society",
548 notes = "si self-interstitial migration barrier",
551 @Article{bar-yam84_2,
552 title = "Electronic structure and total-energy migration
553 barriers of silicon self-interstitials",
554 author = "Y. Bar-Yam and J. D. Joannopoulos",
555 journal = "Phys. Rev. B",
558 pages = "1844--1852",
562 doi = "10.1103/PhysRevB.30.1844",
563 publisher = "American Physical Society",
567 title = "First-principles calculations of self-diffusion
568 constants in silicon",
569 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
570 and D. B. Laks and W. Andreoni and S. T. Pantelides",
571 journal = "Phys. Rev. Lett.",
574 pages = "2435--2438",
578 doi = "10.1103/PhysRevLett.70.2435",
579 publisher = "American Physical Society",
580 notes = "si self int diffusion by ab initio md, formation
581 entropy calculations",
585 title = "Defect migration in crystalline silicon",
586 author = "Lindsey J. Munro and David J. Wales",
587 journal = "Phys. Rev. B",
590 pages = "3969--3980",
594 doi = "10.1103/PhysRevB.59.3969",
595 publisher = "American Physical Society",
596 notes = "eigenvector following method, vacancy and interstiial
597 defect migration mechanisms",
601 title = "Tight-binding theory of native point defects in
603 author = "L. Colombo",
604 journal = "Annu. Rev. Mater. Res.",
609 doi = "10.1146/annurev.matsci.32.111601.103036",
610 publisher = "Annual Reviews",
611 notes = "si self interstitial, tbmd, virial stress",
614 @Article{al-mushadani03,
615 title = "Free-energy calculations of intrinsic point defects in
617 author = "O. K. Al-Mushadani and R. J. Needs",
618 journal = "Phys. Rev. B",
625 doi = "10.1103/PhysRevB.68.235205",
626 publisher = "American Physical Society",
627 notes = "formation energies of intrinisc point defects in
628 silicon, si self interstitials, free energy",
632 title = "Electronic surface error in the Si interstitial
634 author = "Ann E. Mattsson and Ryan R. Wixom and Rickard
636 journal = "Phys. Rev. B",
643 doi = "10.1103/PhysRevB.77.155211",
644 publisher = "American Physical Society",
645 notes = "si self interstitial formation energies by dft",
648 @Article{goedecker02,
649 title = "A Fourfold Coordinated Point Defect in Silicon",
650 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
651 journal = "Phys. Rev. Lett.",
658 doi = "10.1103/PhysRevLett.88.235501",
659 publisher = "American Physical Society",
660 notes = "first time ffcd, fourfold coordinated point defect in
665 title = "Ab initio molecular dynamics simulation of
666 self-interstitial diffusion in silicon",
667 author = "Beat Sahli and Wolfgang Fichtner",
668 journal = "Phys. Rev. B",
675 doi = "10.1103/PhysRevB.72.245210",
676 publisher = "American Physical Society",
677 notes = "si self int, diffusion, barrier height, voronoi
682 title = "Ab initio calculations of the interaction between
683 native point defects in silicon",
684 journal = "Mater. Sci. Eng., B",
689 note = "EMRS 2005, Symposium D - Materials Science and Device
690 Issues for Future Technologies",
692 doi = "DOI: 10.1016/j.mseb.2005.08.072",
693 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
694 author = "G. Hobler and G. Kresse",
695 notes = "vasp intrinsic si defect interaction study, capture
700 title = "Ab initio study of self-diffusion in silicon over a
701 wide temperature range: Point defect states and
702 migration mechanisms",
703 author = "Shangyi Ma and Shaoqing Wang",
704 journal = "Phys. Rev. B",
711 doi = "10.1103/PhysRevB.81.193203",
712 publisher = "American Physical Society",
713 notes = "si self interstitial diffusion + refs",
717 title = "Atomistic simulations on the thermal stability of the
718 antisite pair in 3{C}- and 4{H}-Si{C}",
719 author = "M. Posselt and F. Gao and W. J. Weber",
720 journal = "Phys. Rev. B",
727 doi = "10.1103/PhysRevB.73.125206",
728 publisher = "American Physical Society",
732 title = "Correlation between self-diffusion in Si and the
733 migration mechanisms of vacancies and
734 self-interstitials: An atomistic study",
735 author = "M. Posselt and F. Gao and H. Bracht",
736 journal = "Phys. Rev. B",
743 doi = "10.1103/PhysRevB.78.035208",
744 publisher = "American Physical Society",
745 notes = "si self-interstitial and vacancy diffusion, stillinger
750 title = "Ab initio and empirical-potential studies of defect
751 properties in $3{C}-Si{C}$",
752 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
754 journal = "Phys. Rev. B",
761 doi = "10.1103/PhysRevB.64.245208",
762 publisher = "American Physical Society",
763 notes = "defects in 3c-sic",
767 title = "Empirical potential approach for defect properties in
769 journal = "Nucl. Instrum. Methods Phys. Res. B",
776 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
777 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
778 author = "Fei Gao and William J. Weber",
779 keywords = "Empirical potential",
780 keywords = "Defect properties",
781 keywords = "Silicon carbide",
782 keywords = "Computer simulation",
783 notes = "sic potential, brenner type, like erhart/albe",
787 title = "Atomistic study of intrinsic defect migration in
789 author = "Fei Gao and William J. Weber and M. Posselt and V.
791 journal = "Phys. Rev. B",
798 doi = "10.1103/PhysRevB.69.245205",
799 publisher = "American Physical Society",
800 notes = "defect migration in sic",
804 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
807 title = "Ab Initio atomic simulations of antisite pair recovery
808 in cubic silicon carbide",
811 journal = "Appl. Phys. Lett.",
817 keywords = "ab initio calculations; silicon compounds; antisite
818 defects; wide band gap semiconductors; molecular
819 dynamics method; density functional theory;
820 electron-hole recombination; photoluminescence;
821 impurities; diffusion",
822 URL = "http://link.aip.org/link/?APL/90/221915/1",
823 doi = "10.1063/1.2743751",
826 @Article{mattoni2002,
827 title = "Self-interstitial trapping by carbon complexes in
828 crystalline silicon",
829 author = "A. Mattoni and F. Bernardini and L. Colombo",
830 journal = "Phys. Rev. B",
837 doi = "10.1103/PhysRevB.66.195214",
838 publisher = "American Physical Society",
839 notes = "c in c-si, diffusion, interstitial configuration +
840 links, interaction of carbon and silicon interstitials,
841 tersoff suitability",
845 title = "Calculations of Silicon Self-Interstitial Defects",
846 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
848 journal = "Phys. Rev. Lett.",
851 pages = "2351--2354",
855 doi = "10.1103/PhysRevLett.83.2351",
856 publisher = "American Physical Society",
857 notes = "nice images of the defects, si defect overview +
862 title = "Identification of the migration path of interstitial
864 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
865 journal = "Phys. Rev. B",
868 pages = "7439--7442",
872 doi = "10.1103/PhysRevB.50.7439",
873 publisher = "American Physical Society",
874 notes = "carbon interstitial migration path shown, 001 c-si
879 title = "Theory of carbon-carbon pairs in silicon",
880 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
881 journal = "Phys. Rev. B",
884 pages = "9845--9850",
888 doi = "10.1103/PhysRevB.58.9845",
889 publisher = "American Physical Society",
890 notes = "c_i c_s pair configuration, theoretical results",
894 title = "Bistable interstitial-carbon--substitutional-carbon
896 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
898 journal = "Phys. Rev. B",
901 pages = "5765--5783",
905 doi = "10.1103/PhysRevB.42.5765",
906 publisher = "American Physical Society",
907 notes = "c_i c_s pair configuration, experimental results",
911 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
912 Shifeng Lu and Xiang-Yang Liu",
914 title = "Ab initio modeling and experimental study of {C}--{B}
918 journal = "Appl. Phys. Lett.",
922 keywords = "silicon; boron; carbon; elemental semiconductors;
923 impurity-defect interactions; ab initio calculations;
924 secondary ion mass spectra; diffusion; interstitials",
925 URL = "http://link.aip.org/link/?APL/80/52/1",
926 doi = "10.1063/1.1430505",
927 notes = "c-c 100 split, lower as a and b states of capaz",
931 title = "Ab initio investigation of carbon-related defects in
933 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
935 journal = "Phys. Rev. B",
938 pages = "12554--12557",
942 doi = "10.1103/PhysRevB.47.12554",
943 publisher = "American Physical Society",
944 notes = "c interstitials in crystalline silicon",
948 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
950 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
951 Sokrates T. Pantelides",
952 journal = "Phys. Rev. Lett.",
955 pages = "1814--1817",
959 doi = "10.1103/PhysRevLett.52.1814",
960 publisher = "American Physical Society",
961 notes = "microscopic theory diffusion silicon dft migration
966 title = "Unified Approach for Molecular Dynamics and
967 Density-Functional Theory",
968 author = "R. Car and M. Parrinello",
969 journal = "Phys. Rev. Lett.",
972 pages = "2471--2474",
976 doi = "10.1103/PhysRevLett.55.2471",
977 publisher = "American Physical Society",
978 notes = "car parrinello method, dft and md",
982 title = "Short-range order, bulk moduli, and physical trends in
983 c-$Si1-x$$Cx$ alloys",
984 author = "P. C. Kelires",
985 journal = "Phys. Rev. B",
988 pages = "8784--8787",
992 doi = "10.1103/PhysRevB.55.8784",
993 publisher = "American Physical Society",
994 notes = "c strained si, montecarlo md, bulk moduli, next
999 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
1000 Application to the $Si1-x-yGexCy$ System",
1001 author = "P. C. Kelires",
1002 journal = "Phys. Rev. Lett.",
1005 pages = "1114--1117",
1009 doi = "10.1103/PhysRevLett.75.1114",
1010 publisher = "American Physical Society",
1011 notes = "mc md, strain compensation in si ge by c insertion",
1015 title = "Low temperature electron irradiation of silicon
1017 journal = "Solid State Commun.",
1024 doi = "DOI: 10.1016/0038-1098(70)90074-8",
1025 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
1026 author = "A. R. Bean and R. C. Newman",
1030 author = "F. Durand and J. Duby",
1031 affiliation = "EPM-Madylam, CNRS and INP Grenoble, France",
1032 title = "Carbon solubility in solid and liquid silicon—{A}
1033 review with reference to eutectic equilibrium",
1034 journal = "Journal of Phase Equilibria",
1035 publisher = "Springer New York",
1037 keyword = "Chemistry and Materials Science",
1041 URL = "http://dx.doi.org/10.1361/105497199770335956",
1042 note = "10.1361/105497199770335956",
1044 notes = "better c solubility limit in silicon",
1048 title = "{EPR} Observation of the Isolated Interstitial Carbon
1050 author = "G. D. Watkins and K. L. Brower",
1051 journal = "Phys. Rev. Lett.",
1054 pages = "1329--1332",
1058 doi = "10.1103/PhysRevLett.36.1329",
1059 publisher = "American Physical Society",
1060 notes = "epr observations of 100 interstitial carbon atom in
1065 title = "{EPR} identification of the single-acceptor state of
1066 interstitial carbon in silicon",
1067 author = "L. W. Song and G. D. Watkins",
1068 journal = "Phys. Rev. B",
1071 pages = "5759--5764",
1075 doi = "10.1103/PhysRevB.42.5759",
1076 publisher = "American Physical Society",
1077 notes = "carbon diffusion in silicon",
1081 author = "A K Tipping and R C Newman",
1082 title = "The diffusion coefficient of interstitial carbon in
1084 journal = "Semicond. Sci. Technol.",
1088 URL = "http://stacks.iop.org/0268-1242/2/315",
1090 notes = "diffusion coefficient of carbon interstitials in
1095 author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
1098 title = "Annealing behavior of Me{V} implanted carbon in
1102 journal = "J. Appl. Phys.",
1105 pages = "3815--3820",
1106 keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
1107 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
1109 URL = "http://link.aip.org/link/?JAP/74/3815/1",
1110 doi = "10.1063/1.354474",
1111 notes = "c at interstitial location for rt implantation in si",
1115 title = "Carbon incorporation into Si at high concentrations by
1116 ion implantation and solid phase epitaxy",
1117 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
1118 Picraux and J. K. Watanabe and J. W. Mayer",
1119 journal = "J. Appl. Phys.",
1124 doi = "10.1063/1.360806",
1125 notes = "strained silicon, carbon supersaturation",
1128 @Article{laveant2002,
1129 title = "Epitaxy of carbon-rich silicon with {MBE}",
1130 journal = "Mater. Sci. Eng., B",
1136 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
1137 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
1138 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
1140 notes = "low c in si, tensile stress to compensate compressive
1141 stress, avoid sic precipitation",
1145 title = "The formation of swirl defects in silicon by
1146 agglomeration of self-interstitials",
1147 journal = "J. Cryst. Growth",
1154 doi = "DOI: 10.1016/0022-0248(77)90034-3",
1155 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
1156 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1157 notes = "b-swirl: si + c interstitial agglomerates, c-si
1162 title = "Microdefects in silicon and their relation to point
1164 journal = "J. Cryst. Growth",
1171 doi = "DOI: 10.1016/0022-0248(81)90397-3",
1172 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
1173 author = "H. Föll and U. Gösele and B. O. Kolbesen",
1174 notes = "swirl review",
1178 author = "P. Werner and S. Eichler and G. Mariani and R.
1179 K{\"{o}}gler and W. Skorupa",
1180 title = "Investigation of {C}[sub x]Si defects in {C} implanted
1181 silicon by transmission electron microscopy",
1184 journal = "Appl. Phys. Lett.",
1188 keywords = "silicon; ion implantation; carbon; crystal defects;
1189 transmission electron microscopy; annealing; positron
1190 annihilation; secondary ion mass spectroscopy; buried
1191 layers; precipitation",
1192 URL = "http://link.aip.org/link/?APL/70/252/1",
1193 doi = "10.1063/1.118381",
1194 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1198 @InProceedings{werner96,
1199 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1201 booktitle = "Proceedings of the 11th International Conference on
1202 Ion Implantation Technology.",
1203 title = "{TEM} investigation of {C}-Si defects in carbon
1210 doi = "10.1109/IIT.1996.586497",
1212 notes = "c-si agglomerates dumbbells",
1216 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1219 title = "Carbon diffusion in silicon",
1222 journal = "Appl. Phys. Lett.",
1225 pages = "2465--2467",
1226 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1227 secondary ion mass spectra; semiconductor epitaxial
1228 layers; annealing; impurity-defect interactions;
1229 impurity distribution",
1230 URL = "http://link.aip.org/link/?APL/73/2465/1",
1231 doi = "10.1063/1.122483",
1232 notes = "c diffusion in si, kick out mechnism",
1236 author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
1238 title = "Self-interstitial enhanced carbon diffusion in
1242 journal = "Appl. Phys. Lett.",
1246 keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
1247 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
1248 TEMPERATURE; IMPURITIES",
1249 URL = "http://link.aip.org/link/?APL/45/268/1",
1250 doi = "10.1063/1.95167",
1251 notes = "c diffusion due to si self-interstitials",
1255 author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano
1258 title = "Characterization of SiGe/Si heterostructures formed by
1259 Ge[sup + ] and {C}[sup + ] implantation",
1262 journal = "Appl. Phys. Lett.",
1265 pages = "2345--2347",
1266 keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES;
1267 FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM
1268 SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE
1269 EPITAXY; CARBON IONS; GERMANIUM IONS",
1270 URL = "http://link.aip.org/link/?APL/57/2345/1",
1271 doi = "10.1063/1.103888",
1275 author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
1276 Doyle and S. T. Picraux and J. W. Mayer",
1278 title = "Metastable SiGe{C} formation by solid phase epitaxy",
1281 journal = "Appl. Phys. Lett.",
1284 pages = "2786--2788",
1285 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
1286 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
1287 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
1288 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
1289 EPITAXY; AMORPHIZATION",
1290 URL = "http://link.aip.org/link/?APL/63/2786/1",
1291 doi = "10.1063/1.110334",
1295 author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F.
1296 Legoues and J. Angilello and F. Cardone",
1298 title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si
1299 strained layer superlattices",
1302 journal = "Appl. Phys. Lett.",
1305 pages = "2758--2760",
1306 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
1307 MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING;
1308 CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS
1309 RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE;
1310 DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS",
1311 URL = "http://link.aip.org/link/?APL/60/2758/1",
1312 doi = "10.1063/1.106868",
1316 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1317 Picraux and J. K. Watanabe and J. W. Mayer",
1319 title = "Precipitation and relaxation in strained Si[sub 1 -
1320 y]{C}[sub y]/Si heterostructures",
1323 journal = "J. Appl. Phys.",
1326 pages = "3656--3668",
1327 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1328 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1329 doi = "10.1063/1.357429",
1330 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1331 precipitation by substitutional carbon, coherent prec,
1332 coherent to incoherent transition strain vs interface
1337 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1340 title = "Investigation of the high temperature behavior of
1341 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1344 journal = "J. Appl. Phys.",
1347 pages = "1934--1937",
1348 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1349 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1350 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1351 TEMPERATURE RANGE 04001000 K",
1352 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1353 doi = "10.1063/1.358826",
1357 title = "Prospects for device implementation of wide band gap
1359 author = "J. H. Edgar",
1360 journal = "J. Mater. Res.",
1365 doi = "10.1557/JMR.1992.0235",
1366 notes = "properties wide band gap semiconductor, sic
1370 @Article{zirkelbach2007,
1371 title = "Monte Carlo simulation study of a selforganisation
1372 process leading to ordered precipitate structures",
1373 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1375 journal = "Nucl. Instr. and Meth. B",
1382 doi = "doi:10.1016/j.nimb.2006.12.118",
1383 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1385 abstract = "Periodically arranged, selforganised, nanometric,
1386 amorphous precipitates have been observed after
1387 high-fluence ion implantations into solids for a number
1388 of ion/target combinations at certain implantation
1389 conditions. A model describing the ordering process
1390 based on compressive stress exerted by the amorphous
1391 inclusions as a result of the density change upon
1392 amorphisation is introduced. A Monte Carlo simulation
1393 code, which focuses on high-fluence carbon
1394 implantations into silicon, is able to reproduce
1395 experimentally observed nanolamella distributions as
1396 well as the formation of continuous amorphous layers.
1397 By means of simulation, the selforganisation process
1398 becomes traceable and detailed information about the
1399 compositional and structural state during the ordering
1400 process is obtained. Based on simulation results, a
1401 recipe is proposed for producing broad distributions of
1402 ordered lamellar structures.",
1405 @Article{zirkelbach2006,
1406 title = "Monte-Carlo simulation study of the self-organization
1407 of nanometric amorphous precipitates in regular arrays
1408 during ion irradiation",
1409 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1411 journal = "Nucl. Instr. and Meth. B",
1418 doi = "doi:10.1016/j.nimb.2005.08.162",
1419 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1421 abstract = "High-dose ion implantation of materials that undergo
1422 drastic density change upon amorphization at certain
1423 implantation conditions results in periodically
1424 arranged, self-organized, nanometric configurations of
1425 the amorphous phase. A simple model explaining the
1426 phenomenon is introduced and implemented in a
1427 Monte-Carlo simulation code. Through simulation
1428 conditions for observing lamellar precipitates are
1429 specified and additional information about the
1430 compositional and structural state during the ordering
1431 process is gained.",
1434 @Article{zirkelbach2005,
1435 title = "Modelling of a selforganization process leading to
1436 periodic arrays of nanometric amorphous precipitates by
1438 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1440 journal = "Comp. Mater. Sci.",
1447 doi = "doi:10.1016/j.commatsci.2004.12.016",
1448 publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
1450 abstract = "Ion irradiation of materials, which undergo a drastic
1451 density change upon amorphization have been shown to
1452 exhibit selforganized, nanometric structures of the
1453 amorphous phase in the crystalline host lattice. In
1454 order to better understand the process a
1455 Monte-Carlo-simulation code based on a simple model is
1456 developed. In the present work we focus on high-dose
1457 carbon implantations into silicon. The simulation is
1458 able to reproduce results gained by cross-sectional TEM
1459 measurements of high-dose carbon implanted silicon.
1460 Necessary conditions can be specified for the
1461 self-organization process and information is gained
1462 about the compositional and structural state during the
1463 ordering process which is difficult to be obtained by
1467 @Article{zirkelbach09,
1468 title = "Molecular dynamics simulation of defect formation and
1469 precipitation in heavily carbon doped silicon",
1470 journal = "Mater. Sci. Eng., B",
1475 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1476 Silicon Materials Research for Electronic and
1477 Photovoltaic Applications",
1479 doi = "DOI: 10.1016/j.mseb.2008.10.010",
1480 URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
1481 author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
1483 keywords = "Silicon",
1484 keywords = "Carbon",
1485 keywords = "Silicon carbide",
1486 keywords = "Nucleation",
1487 keywords = "Defect formation",
1488 keywords = "Molecular dynamics simulations",
1489 abstract = "The precipitation process of silicon carbide in
1490 heavily carbon doped silicon is not yet fully
1491 understood. High resolution transmission electron
1492 microscopy observations suggest that in a first step
1493 carbon atoms form C-Si dumbbells on regular Si lattice
1494 sites which agglomerate into large clusters. In a
1495 second step, when the cluster size reaches a radius of
1496 a few nm, the high interfacial energy due to the SiC/Si
1497 lattice misfit of almost 20\% is overcome and the
1498 precipitation occurs. By simulation, details of the
1499 precipitation process can be obtained on the atomic
1500 level. A recently proposed parametrization of a
1501 Tersoff-like bond order potential is used to model the
1502 system appropriately. Preliminary results gained by
1503 molecular dynamics simulations using this potential are
1507 @Article{zirkelbach10,
1508 title = "Defects in carbon implanted silicon calculated by
1509 classical potentials and first-principles methods",
1510 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1511 K. N. Lindner and W. G. Schmidt and E. Rauls",
1512 journal = "Phys. Rev. B",
1519 doi = "10.1103/PhysRevB.82.094110",
1520 publisher = "American Physical Society",
1521 abstract = "A comparative theoretical investigation of carbon
1522 interstitials in silicon is presented. Calculations
1523 using classical potentials are compared to
1524 first-principles density-functional theory calculations
1525 of the geometries, formation, and activation energies
1526 of the carbon dumbbell interstitial, showing the
1527 importance of a quantum-mechanical description of this
1528 system. In contrast to previous studies, the present
1529 first-principles calculations of the interstitial
1530 carbon migration path yield an activation energy that
1531 excellently matches the experiment. The bond-centered
1532 interstitial configuration shows a net magnetization of
1533 two electrons, illustrating the need for spin-polarized
1537 @Article{zirkelbach11,
1538 journal = "Phys. Rev. B",
1540 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
1541 publisher = "American Physical Society",
1542 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
1543 K. N. Lindner and W. G. Schmidt and E. Rauls",
1544 title = "Combined \textit{ab initio} and classical potential
1545 simulation study on silicon carbide precipitation in
1551 doi = "10.1103/PhysRevB.84.064126",
1553 abstract = "Atomistic simulations on the silicon carbide
1554 precipitation in bulk silicon employing both, classical
1555 potential and first-principles methods are presented.
1556 The calculations aim at a comprehensive, microscopic
1557 understanding of the precipitation mechanism in the
1558 context of controversial discussions in the literature.
1559 For the quantum-mechanical treatment, basic processes
1560 assumed in the precipitation process are calculated in
1561 feasible systems of small size. The migration mechanism
1562 of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
1563 1 0> self-interstitial in otherwise defect-free silicon
1564 are investigated using density functional theory
1565 calculations. The influence of a nearby vacancy,
1566 another carbon interstitial and a substitutional defect
1567 as well as a silicon self-interstitial has been
1568 investigated systematically. Interactions of various
1569 combinations of defects have been characterized
1570 including a couple of selected migration pathways
1571 within these configurations. Almost all of the
1572 investigated pairs of defects tend to agglomerate
1573 allowing for a reduction in strain. The formation of
1574 structures involving strong carbon-carbon bonds turns
1575 out to be very unlikely. In contrast, substitutional
1576 carbon occurs in all probability. A long range capture
1577 radius has been observed for pairs of interstitial
1578 carbon as well as interstitial carbon and vacancies. A
1579 rather small capture radius is predicted for
1580 substitutional carbon and silicon self-interstitials.
1581 Initial assumptions regarding the precipitation
1582 mechanism of silicon carbide in bulk silicon are
1583 established and conformability to experimental findings
1584 is discussed. Furthermore, results of the accurate
1585 first-principles calculations on defects and carbon
1586 diffusion in silicon are compared to results of
1587 classical potential simulations revealing significant
1588 limitations of the latter method. An approach to work
1589 around this problem is proposed. Finally, results of
1590 the classical potential molecular dynamics simulations
1591 of large systems are examined, which reinforce previous
1592 assumptions and give further insight into basic
1593 processes involved in the silicon carbide transition.",
1596 @Article{zirkelbach12,
1597 author = "F. Zirkelbach and B. Stritzker and K. Nordlund and W.
1598 G. Schmidt and E. Rauls and J. K. N. Lindner",
1599 title = "First-principles and empirical potential simulation
1600 study of intrinsic and carbon-related defects in
1602 journal = "physica status solidi (c)",
1605 publisher = "WILEY-VCH Verlag",
1607 URL = "http://dx.doi.org/10.1002/pssc.201200198",
1608 doi = "10.1002/pssc.201200198",
1609 pages = "1968--1973",
1610 keywords = "silicon, carbon, silicon carbide, defect formation,
1611 defect migration, density functional theory, empirical
1612 potential, molecular dynamics",
1614 abstract = "Results of atomistic simulations aimed at
1615 understanding precipitation of the highly attractive
1616 wide band gap semiconductor material silicon carbide in
1617 silicon are presented. The study involves a systematic
1618 investigation of intrinsic and carbon-related defects
1619 as well as defect combinations and defect migration by
1620 both, quantummechanical first-principles as well as
1621 empirical potential methods. Comparing formation and
1622 activation energies, ground-state structures of defects
1623 and defect combinations as well as energetically
1624 favorable agglomeration of defects are predicted.
1625 Moreover, accurate ab initio calculations unveil
1626 limitations of the analytical method based on a
1627 Tersoff-like bond order potential. A work-around is
1628 proposed in order to subsequently apply the highly
1629 efficient technique on large structures not accessible
1630 by first-principles methods. The outcome of both types
1631 of simulation provides a basic microscopic
1632 understanding of defect formation and structural
1633 evolution particularly at non-equilibrium conditions
1634 strongly deviated from the ground state as commonly
1635 found in SiC growth processes. A possible precipitation
1636 mechanism, which conforms well to experimental findings
1637 and clarifies contradictory views present in the
1638 literature is outlined (© 2012 WILEY-VCH Verlag GmbH \&
1639 Co. KGaA, Weinheim)",
1643 author = "J. K. N. Lindner and A. Frohnwieser and B.
1644 Rauschenbach and B. Stritzker",
1645 title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
1647 journal = "MRS Proc.",
1652 doi = "10.1557/PROC-354-171",
1653 URL = "http://dx.doi.org/10.1557/PROC-354-171",
1654 notes = "first time ibs at moderate temperatures",
1658 title = "Formation of buried epitaxial silicon carbide layers
1659 in silicon by ion beam synthesis",
1660 journal = "Mater. Chem. Phys.",
1667 doi = "DOI: 10.1016/S0254-0584(97)80008-9",
1668 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
1669 author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
1670 Götz and A. Frohnwieser and B. Rauschenbach and B.
1672 notes = "dose window",
1675 @Article{calcagno96,
1676 title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
1678 journal = "Nucl. Instrum. Methods Phys. Res. B",
1683 note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
1684 New Trends in Ion Beam Processing of Materials",
1686 doi = "DOI: 10.1016/S0168-583X(96)00492-2",
1687 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
1688 author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
1689 Grimaldi and P. Musumeci",
1690 notes = "dose window, graphitic bonds",
1694 title = "Mechanisms of Si{C} Formation in the Ion Beam
1695 Synthesis of 3{C}-Si{C} Layers in Silicon",
1696 journal = "Mater. Sci. Forum",
1701 doi = "10.4028/www.scientific.net/MSF.264-268.215",
1702 URL = "http://www.scientific.net/MSF.264-268.215",
1703 author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
1704 notes = "intermediate temperature for sharp interface + good
1709 title = "Controlling the density distribution of Si{C}
1710 nanocrystals for the ion beam synthesis of buried Si{C}
1712 journal = "Nucl. Instrum. Methods Phys. Res. B",
1719 doi = "DOI: 10.1016/S0168-583X(98)00598-9",
1720 URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
1721 author = "J. K. N. Lindner and B. Stritzker",
1722 notes = "two-step implantation process",
1725 @Article{lindner99_2,
1726 title = "Mechanisms in the ion beam synthesis of Si{C} layers
1728 journal = "Nucl. Instrum. Methods Phys. Res. B",
1734 doi = "DOI: 10.1016/S0168-583X(98)00787-3",
1735 URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
1736 author = "J. K. N. Lindner and B. Stritzker",
1737 notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
1741 title = "Ion beam synthesis of buried Si{C} layers in silicon:
1742 Basic physical processes",
1743 journal = "Nucl. Instrum. Methods Phys. Res. B",
1750 doi = "DOI: 10.1016/S0168-583X(01)00504-3",
1751 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
1752 author = "J{\"{o}}rg K. N. Lindner",
1756 title = "High-dose carbon implantations into silicon:
1757 fundamental studies for new technological tricks",
1758 author = "J. K. N. Lindner",
1759 journal = "Appl. Phys. A",
1763 doi = "10.1007/s00339-002-2062-8",
1764 notes = "ibs, burried sic layers",
1768 title = "On the balance between ion beam induced nanoparticle
1769 formation and displacive precipitate resolution in the
1771 journal = "Mater. Sci. Eng., C",
1776 note = "Current Trends in Nanoscience - from Materials to
1779 doi = "DOI: 10.1016/j.msec.2005.09.099",
1780 URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
1781 author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
1783 notes = "c int diffusion barrier",
1786 @Article{haeberlen10,
1787 title = "Structural characterization of cubic and hexagonal
1788 Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
1789 journal = "Journal of Crystal Growth",
1796 doi = "10.1016/j.jcrysgro.2009.12.048",
1797 URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
1798 author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
1799 K. N. Lindner and B. Stritzker",
1803 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1804 application in buffer layer for Ga{N} epitaxial
1806 journal = "Appl. Surf. Sci.",
1811 note = "APHYS'03 Special Issue",
1813 doi = "DOI: 10.1016/j.apsusc.2004.05.199",
1814 URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
1815 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1816 and S. Nishio and K. Yasuda and Y. Ishigami",
1817 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1820 @Article{yamamoto04,
1821 title = "Organometallic vapor phase epitaxial growth of Ga{N}
1822 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1823 implantation into Si(1 1 1) substrate",
1824 journal = "J. Cryst. Growth",
1829 note = "Proceedings of the 11th Biennial (US) Workshop on
1830 Organometallic Vapor Phase Epitaxy (OMVPE)",
1832 doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
1833 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
1834 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1835 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1836 notes = "gan on 3c-sic",
1840 title = "Substrates for gallium nitride epitaxy",
1841 journal = "Mater. Sci. Eng., R",
1848 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1849 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1850 author = "L. Liu and J. H. Edgar",
1851 notes = "gan substrates",
1854 @Article{takeuchi91,
1855 title = "Growth of single crystalline Ga{N} film on Si
1856 substrate using 3{C}-Si{C} as an intermediate layer",
1857 journal = "J. Cryst. Growth",
1864 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1865 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1866 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1867 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1868 notes = "gan on 3c-sic (first time?)",
1872 author = "B. J. Alder and T. E. Wainwright",
1873 title = "Phase Transition for a Hard Sphere System",
1876 journal = "J. Chem. Phys.",
1879 pages = "1208--1209",
1880 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1881 doi = "10.1063/1.1743957",
1885 author = "B. J. Alder and T. E. Wainwright",
1886 title = "Studies in Molecular Dynamics. {I}. General Method",
1889 journal = "J. Chem. Phys.",
1893 URL = "http://link.aip.org/link/?JCP/31/459/1",
1894 doi = "10.1063/1.1730376",
1897 @Article{horsfield96,
1898 title = "Bond-order potentials: Theory and implementation",
1899 author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and
1900 D. G. Pettifor and M. Aoki",
1901 journal = "Phys. Rev. B",
1904 pages = "12694--12712",
1908 doi = "10.1103/PhysRevB.53.12694",
1909 publisher = "American Physical Society",
1913 title = "Empirical chemical pseudopotential theory of molecular
1914 and metallic bonding",
1915 author = "G. C. Abell",
1916 journal = "Phys. Rev. B",
1919 pages = "6184--6196",
1923 doi = "10.1103/PhysRevB.31.6184",
1924 publisher = "American Physical Society",
1927 @Article{tersoff_si1,
1928 title = "New empirical model for the structural properties of
1930 author = "J. Tersoff",
1931 journal = "Phys. Rev. Lett.",
1938 doi = "10.1103/PhysRevLett.56.632",
1939 publisher = "American Physical Society",
1943 title = "Development of a many-body Tersoff-type potential for
1945 author = "Brian W. Dodson",
1946 journal = "Phys. Rev. B",
1949 pages = "2795--2798",
1953 doi = "10.1103/PhysRevB.35.2795",
1954 publisher = "American Physical Society",
1957 @Article{tersoff_si2,
1958 title = "New empirical approach for the structure and energy of
1960 author = "J. Tersoff",
1961 journal = "Phys. Rev. B",
1964 pages = "6991--7000",
1968 doi = "10.1103/PhysRevB.37.6991",
1969 publisher = "American Physical Society",
1972 @Article{tersoff_si3,
1973 title = "Empirical interatomic potential for silicon with
1974 improved elastic properties",
1975 author = "J. Tersoff",
1976 journal = "Phys. Rev. B",
1979 pages = "9902--9905",
1983 doi = "10.1103/PhysRevB.38.9902",
1984 publisher = "American Physical Society",
1988 title = "Empirical Interatomic Potential for Carbon, with
1989 Applications to Amorphous Carbon",
1990 author = "J. Tersoff",
1991 journal = "Phys. Rev. Lett.",
1994 pages = "2879--2882",
1998 doi = "10.1103/PhysRevLett.61.2879",
1999 publisher = "American Physical Society",
2003 title = "Modeling solid-state chemistry: Interatomic potentials
2004 for multicomponent systems",
2005 author = "J. Tersoff",
2006 journal = "Phys. Rev. B",
2009 pages = "5566--5568",
2013 doi = "10.1103/PhysRevB.39.5566",
2014 publisher = "American Physical Society",
2018 title = "Carbon defects and defect reactions in silicon",
2019 author = "J. Tersoff",
2020 journal = "Phys. Rev. Lett.",
2023 pages = "1757--1760",
2027 doi = "10.1103/PhysRevLett.64.1757",
2028 publisher = "American Physical Society",
2032 title = "Point defects and dopant diffusion in silicon",
2033 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
2034 journal = "Rev. Mod. Phys.",
2041 doi = "10.1103/RevModPhys.61.289",
2042 publisher = "American Physical Society",
2046 title = "Silicon carbide: synthesis and processing",
2047 journal = "Nucl. Instrum. Methods Phys. Res. B",
2052 note = "Radiation Effects in Insulators",
2054 doi = "DOI: 10.1016/0168-583X(96)00065-1",
2055 URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
2056 author = "W. Wesch",
2060 author = "R. F. Davis and G. Kelner and M. Shur and J. W.
2061 Palmour and J. A. Edmond",
2062 journal = "Proc. IEEE",
2063 title = "Thin film deposition and microelectronic and
2064 optoelectronic device fabrication and characterization
2065 in monocrystalline alpha and beta silicon carbide",
2071 keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
2072 diode;SiC;dry etching;electrical
2073 contacts;etching;impurity incorporation;optoelectronic
2074 device fabrication;solid-state devices;surface
2075 chemistry;Schottky effect;Schottky gate field effect
2076 transistors;Schottky-barrier
2077 diodes;etching;heterojunction bipolar
2078 transistors;insulated gate field effect
2079 transistors;light emitting diodes;semiconductor
2080 materials;semiconductor thin films;silicon compounds;",
2081 doi = "10.1109/5.90132",
2083 notes = "sic growth methods",
2087 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
2088 Lin and B. Sverdlov and M. Burns",
2090 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
2091 ZnSe-based semiconductor device technologies",
2094 journal = "J. Appl. Phys.",
2097 pages = "1363--1398",
2098 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
2099 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
2100 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
2102 URL = "http://link.aip.org/link/?JAP/76/1363/1",
2103 doi = "10.1063/1.358463",
2104 notes = "sic intro, properties",
2108 author = "Noch Unbekannt",
2109 title = "How to find references",
2110 journal = "Journal of Applied References",
2117 title = "Atomistic simulation of thermomechanical properties of
2119 author = "Meijie Tang and Sidney Yip",
2120 journal = "Phys. Rev. B",
2123 pages = "15150--15159",
2126 doi = "10.1103/PhysRevB.52.15150",
2127 notes = "modified tersoff, scale cutoff with volume, promising
2128 tersoff reparametrization",
2129 publisher = "American Physical Society",
2133 title = "Silicon carbide as a new {MEMS} technology",
2134 journal = "Seonsor. Actuator. A",
2140 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
2141 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
2142 author = "Pasqualina M. Sarro",
2144 keywords = "Silicon carbide",
2145 keywords = "Micromachining",
2146 keywords = "Mechanical stress",
2150 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
2151 semiconductor for high-temperature applications: {A}
2153 journal = "Solid-State Electron.",
2156 pages = "1409--1422",
2159 doi = "DOI: 10.1016/0038-1101(96)00045-7",
2160 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
2161 author = "J. B. Casady and R. W. Johnson",
2162 notes = "sic intro",
2165 @Article{giancarli98,
2166 title = "Design requirements for Si{C}/Si{C} composites
2167 structural material in fusion power reactor blankets",
2168 journal = "Fusion Eng. Des.",
2174 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
2175 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
2176 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
2177 Marois and N. B. Morley and J. F. Salavy",
2181 title = "Electrical and optical characterization of Si{C}",
2182 journal = "Physica B",
2188 doi = "DOI: 10.1016/0921-4526(93)90249-6",
2189 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
2190 author = "G. Pensl and W. J. Choyke",
2194 title = "Investigation of growth processes of ingots of silicon
2195 carbide single crystals",
2196 journal = "J. Cryst. Growth",
2201 notes = "modified lely process",
2203 doi = "DOI: 10.1016/0022-0248(78)90169-0",
2204 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
2205 author = "Yu. M. Tairov and V. F. Tsvetkov",
2209 title = "General principles of growing large-size single
2210 crystals of various silicon carbide polytypes",
2211 journal = "J. Cryst. Growth",
2218 doi = "DOI: 10.1016/0022-0248(81)90184-6",
2219 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
2220 author = "Yu.M. Tairov and V. F. Tsvetkov",
2224 title = "Si{C} boule growth by sublimation vapor transport",
2225 journal = "J. Cryst. Growth",
2232 doi = "DOI: 10.1016/0022-0248(91)90152-U",
2233 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
2234 author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
2235 R. H. Hopkins and W. J. Choyke",
2239 title = "Growth of large Si{C} single crystals",
2240 journal = "J. Cryst. Growth",
2247 doi = "DOI: 10.1016/0022-0248(93)90348-Z",
2248 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
2249 author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
2250 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
2255 title = "Control of polytype formation by surface energy
2256 effects during the growth of Si{C} monocrystals by the
2257 sublimation method",
2258 journal = "J. Cryst. Growth",
2265 doi = "DOI: 10.1016/0022-0248(93)90397-F",
2266 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
2267 author = "R. A. Stein and P. Lanig",
2268 notes = "6h and 4h, sublimation technique",
2272 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
2275 title = "Production of large-area single-crystal wafers of
2276 cubic Si{C} for semiconductor devices",
2279 journal = "Appl. Phys. Lett.",
2283 keywords = "silicon carbides; layers; chemical vapor deposition;
2285 URL = "http://link.aip.org/link/?APL/42/460/1",
2286 doi = "10.1063/1.93970",
2287 notes = "cvd of 3c-sic on si, sic buffer layer",
2290 @Article{nagasawa06,
2291 author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
2292 title = "Reducing Planar Defects in 3{C}¿Si{C}",
2293 journal = "Chemical Vapor Deposition",
2296 publisher = "WILEY-VCH Verlag",
2298 URL = "http://dx.doi.org/10.1002/cvde.200506466",
2299 doi = "10.1002/cvde.200506466",
2301 keywords = "Defect structures, Epitaxy, Silicon carbide",
2303 notes = "cvd on si",
2307 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
2308 and Hiroyuki Matsunami",
2310 title = "Epitaxial growth and electric characteristics of cubic
2314 journal = "J. Appl. Phys.",
2317 pages = "4889--4893",
2318 URL = "http://link.aip.org/link/?JAP/61/4889/1",
2319 doi = "10.1063/1.338355",
2320 notes = "cvd of 3c-sic on si, sic buffer layer, first time
2325 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
2327 title = "Growth and Characterization of Cubic Si{C}
2328 Single-Crystal Films on Si",
2331 journal = "J. Electrochem. Soc.",
2334 pages = "1558--1565",
2335 keywords = "semiconductor materials; silicon compounds; carbon
2336 compounds; crystal morphology; electron mobility",
2337 URL = "http://link.aip.org/link/?JES/134/1558/1",
2338 doi = "10.1149/1.2100708",
2339 notes = "blue light emitting diodes (led)",
2342 @Article{powell87_2,
2343 author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
2344 C. M. Chorey and T. T. Cheng and P. Pirouz",
2346 title = "Improved beta-Si{C} heteroepitaxial films using
2347 off-axis Si substrates",
2350 journal = "Appl. Phys. Lett.",
2354 keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
2355 COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
2356 STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
2357 FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
2358 OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
2359 URL = "http://link.aip.org/link/?APL/51/823/1",
2360 doi = "10.1063/1.98824",
2361 notes = "improved sic on off-axis si substrates, reduced apbs",
2365 title = "Crystal growth of Si{C} by step-controlled epitaxy",
2366 journal = "J. Cryst. Growth",
2373 doi = "DOI: 10.1016/0022-0248(90)90013-B",
2374 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
2375 author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
2377 notes = "step-controlled epitaxy model",
2381 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
2382 and Hiroyuki Matsunami",
2383 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
2387 journal = "J. Appl. Phys.",
2391 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
2392 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
2394 URL = "http://link.aip.org/link/?JAP/73/726/1",
2395 doi = "10.1063/1.353329",
2396 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
2399 @Article{powell90_2,
2400 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2401 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2402 Yoganathan and J. Yang and P. Pirouz",
2404 title = "Growth of high quality 6{H}-Si{C} epitaxial films on
2405 vicinal (0001) 6{H}-Si{C} wafers",
2408 journal = "Appl. Phys. Lett.",
2411 pages = "1442--1444",
2412 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2413 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
2414 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
2415 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
2416 URL = "http://link.aip.org/link/?APL/56/1442/1",
2417 doi = "10.1063/1.102492",
2418 notes = "cvd of 6h-sic on 6h-sic",
2422 author = "H. S. Kong and J. T. Glass and R. F. Davis",
2424 title = "Chemical vapor deposition and characterization of
2425 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
2429 journal = "J. Appl. Phys.",
2432 pages = "2672--2679",
2433 keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
2434 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
2435 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
2436 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
2437 PHASE EPITAXY; CRYSTAL ORIENTATION",
2438 URL = "http://link.aip.org/link/?JAP/64/2672/1",
2439 doi = "10.1063/1.341608",
2443 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
2444 J. Choyke and J. L. Bradshaw and L. Henderson and M.
2445 Yoganathan and J. Yang and P. Pirouz",
2447 title = "Growth of improved quality 3{C}-Si{C} films on
2448 6{H}-Si{C} substrates",
2451 journal = "Appl. Phys. Lett.",
2454 pages = "1353--1355",
2455 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
2456 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
2457 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
2459 URL = "http://link.aip.org/link/?APL/56/1353/1",
2460 doi = "10.1063/1.102512",
2461 notes = "cvd of 3c-sic on 6h-sic",
2465 author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
2466 Rozgonyi and K. L. More",
2468 title = "An examination of double positioning boundaries and
2469 interface misfit in beta-Si{C} films on alpha-Si{C}
2473 journal = "J. Appl. Phys.",
2476 pages = "2645--2650",
2477 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
2478 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
2479 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
2480 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
2481 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
2482 URL = "http://link.aip.org/link/?JAP/63/2645/1",
2483 doi = "10.1063/1.341004",
2487 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
2488 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
2489 and W. J. Choyke and L. Clemen and M. Yoganathan",
2491 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
2492 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
2495 journal = "Appl. Phys. Lett.",
2499 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
2500 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
2501 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
2502 URL = "http://link.aip.org/link/?APL/59/333/1",
2503 doi = "10.1063/1.105587",
2507 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
2508 Thokala and M. J. Loboda",
2510 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
2511 films on 6{H}-Si{C} by chemical vapor deposition from
2515 journal = "J. Appl. Phys.",
2518 pages = "1271--1273",
2519 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
2520 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
2522 URL = "http://link.aip.org/link/?JAP/78/1271/1",
2523 doi = "10.1063/1.360368",
2524 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
2528 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
2529 properties of its p-n junction",
2530 journal = "J. Cryst. Growth",
2537 doi = "DOI: 10.1016/0022-0248(87)90449-0",
2538 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
2539 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
2541 notes = "first time ssmbe of 3c-sic on 6h-sic",
2545 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
2546 [alpha]-Si{C}(0001) at low temperatures by solid-source
2547 molecular beam epitaxy",
2548 journal = "J. Cryst. Growth",
2554 doi = "DOI: 10.1016/0022-0248(95)00170-0",
2555 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
2556 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2557 Schr{\"{o}}ter and W. Richter",
2558 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2561 @Article{fissel95_apl,
2562 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2564 title = "Low-temperature growth of Si{C} thin films on Si and
2565 6{H}--Si{C} by solid-source molecular beam epitaxy",
2568 journal = "Appl. Phys. Lett.",
2571 pages = "3182--3184",
2572 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2574 URL = "http://link.aip.org/link/?APL/66/3182/1",
2575 doi = "10.1063/1.113716",
2576 notes = "mbe 3c-sic on si and 6h-sic",
2580 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2581 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2583 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2584 migration enhanced epitaxy controlled to an atomic
2585 level using surface superstructures",
2588 journal = "Appl. Phys. Lett.",
2591 pages = "1204--1206",
2592 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2593 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2595 URL = "http://link.aip.org/link/?APL/68/1204/1",
2596 doi = "10.1063/1.115969",
2597 notes = "ss mbe sic, superstructure, reconstruction",
2601 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2602 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2603 C. M. Bertoni and A. Catellani",
2604 journal = "Phys. Rev. Lett.",
2611 doi = "10.1103/PhysRevLett.91.136101",
2612 publisher = "American Physical Society",
2613 notes = "dft calculations mbe sic growth",
2617 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2619 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2623 journal = "Appl. Phys. Lett.",
2627 URL = "http://link.aip.org/link/?APL/18/509/1",
2628 doi = "10.1063/1.1653516",
2629 notes = "first time sic by ibs, follow cites for precipitation
2634 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2635 and E. V. Lubopytova",
2636 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2637 by ion implantation",
2638 publisher = "Taylor \& Francis",
2640 journal = "Radiat. Eff.",
2644 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2645 notes = "3c-sic for different temperatures, amorphous, poly,
2646 single crystalline",
2649 @Article{akimchenko80,
2650 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2651 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2652 title = "Structure and optical properties of silicon implanted
2653 by high doses of 70 and 310 ke{V} carbon ions",
2654 publisher = "Taylor \& Francis",
2656 journal = "Radiat. Eff.",
2660 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2661 notes = "3c-sic nucleation by thermal spikes",
2665 title = "Structure and annealing properties of silicon carbide
2666 thin layers formed by implantation of carbon ions in
2668 journal = "Thin Solid Films",
2675 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2676 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2677 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2682 title = "Characteristics of the synthesis of [beta]-Si{C} by
2683 the implantation of carbon ions into silicon",
2684 journal = "Thin Solid Films",
2691 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2692 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2693 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2698 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2699 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2700 Chater and J. A. Iulner and J. Davis",
2701 title = "Formation mechanisms and structures of insulating
2702 compounds formed in silicon by ion beam synthesis",
2703 publisher = "Taylor \& Francis",
2705 journal = "Radiat. Eff.",
2709 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2710 notes = "ibs, comparison with sio and sin, higher temp or time,
2711 no c redistribution",
2715 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2716 J. Davis and G. E. Celler",
2718 title = "Formation of buried layers of beta-Si{C} using ion
2719 beam synthesis and incoherent lamp annealing",
2722 journal = "Appl. Phys. Lett.",
2725 pages = "2242--2244",
2726 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2727 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2728 URL = "http://link.aip.org/link/?APL/51/2242/1",
2729 doi = "10.1063/1.98953",
2730 notes = "nice tem images, sic by ibs",
2734 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2735 and M. Olivier and A. M. Papon and G. Rolland",
2737 title = "High-temperature ion beam synthesis of cubic Si{C}",
2740 journal = "J. Appl. Phys.",
2743 pages = "2908--2912",
2744 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2745 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2746 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2747 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2748 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2749 REACTIONS; MONOCRYSTALS",
2750 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2751 doi = "10.1063/1.346092",
2752 notes = "triple energy implantation to overcome high annealing
2757 author = "R. I. Scace and G. A. Slack",
2759 title = "Solubility of Carbon in Silicon and Germanium",
2762 journal = "J. Chem. Phys.",
2765 pages = "1551--1555",
2766 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2767 doi = "10.1063/1.1730236",
2768 notes = "solubility of c in c-si, si-c phase diagram",
2772 author = "W. Hofker and H. Werner and D. Oosthoek and N.
2774 affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
2775 Laboratories Eindhoven Netherlands Eindhoven
2777 title = "Boron implantations in silicon: {A} comparison of
2778 charge carrier and boron concentration profiles",
2779 journal = "Appl. Phys. A",
2780 publisher = "Springer Berlin / Heidelberg",
2782 keyword = "Physics and Astronomy",
2786 URL = "http://dx.doi.org/10.1007/BF00884267",
2787 note = "10.1007/BF00884267",
2789 notes = "first time ted (only for boron?)",
2793 author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
2796 title = "Rapid annealing and the anomalous diffusion of ion
2797 implanted boron into silicon",
2800 journal = "Appl. Phys. Lett.",
2804 keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
2805 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
2806 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
2807 URL = "http://link.aip.org/link/?APL/50/416/1",
2808 doi = "10.1063/1.98160",
2809 notes = "ted of boron in si",
2813 author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
2816 title = "Transient diffusion of ion-implanted {B} in Si: Dose,
2817 time, and matrix dependence of atomic and electrical
2821 journal = "J. Appl. Phys.",
2824 pages = "6191--6198",
2825 keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
2826 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
2827 CRYSTALS; AMORPHIZATION",
2828 URL = "http://link.aip.org/link/?JAP/68/6191/1",
2829 doi = "10.1063/1.346910",
2830 notes = "ted of boron in si",
2834 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2835 F. W. Saris and W. Vandervorst",
2837 title = "Role of {C} and {B} clusters in transient diffusion of
2841 journal = "Appl. Phys. Lett.",
2844 pages = "1150--1152",
2845 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2846 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2848 URL = "http://link.aip.org/link/?APL/68/1150/1",
2849 doi = "10.1063/1.115706",
2850 notes = "suppression of transient enhanced diffusion (ted)",
2854 title = "Implantation and transient boron diffusion: the role
2855 of the silicon self-interstitial",
2856 journal = "Nucl. Instrum. Methods Phys. Res. B",
2861 note = "Selected Papers of the Tenth International Conference
2862 on Ion Implantation Technology (IIT '94)",
2864 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2865 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2866 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2871 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2872 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2873 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2876 title = "Physical mechanisms of transient enhanced dopant
2877 diffusion in ion-implanted silicon",
2880 journal = "J. Appl. Phys.",
2883 pages = "6031--6050",
2884 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2885 doi = "10.1063/1.364452",
2886 notes = "ted, transient enhanced diffusion, c silicon trap",
2890 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2892 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2893 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2896 journal = "Appl. Phys. Lett.",
2900 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2901 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2902 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2904 URL = "http://link.aip.org/link/?APL/64/324/1",
2905 doi = "10.1063/1.111195",
2906 notes = "beta sic nano crystals in si, mbe, annealing",
2910 author = "Richard A. Soref",
2912 title = "Optical band gap of the ternary semiconductor Si[sub 1
2913 - x - y]Ge[sub x]{C}[sub y]",
2916 journal = "J. Appl. Phys.",
2919 pages = "2470--2472",
2920 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2921 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2923 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2924 doi = "10.1063/1.349403",
2925 notes = "band gap of strained si by c",
2929 author = "E Kasper",
2930 title = "Superlattices of group {IV} elements, a new
2931 possibility to produce direct band gap material",
2932 journal = "Phys. Scr.",
2935 URL = "http://stacks.iop.org/1402-4896/T35/232",
2937 notes = "superlattices, convert indirect band gap into a
2942 author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang
2945 title = "Growth and strain compensation effects in the ternary
2946 Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
2949 journal = "Appl. Phys. Lett.",
2952 pages = "3033--3035",
2953 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS;
2954 TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM
2955 EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL
2956 STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE
2958 URL = "http://link.aip.org/link/?APL/60/3033/1",
2959 doi = "10.1063/1.106774",
2963 author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
2966 title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
2970 journal = "J. Vac. Sci. Technol. B",
2973 pages = "1064--1068",
2974 location = "Ottawa (Canada)",
2975 keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
2976 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
2977 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
2978 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
2979 URL = "http://link.aip.org/link/?JVB/11/1064/1",
2980 doi = "10.1116/1.587008",
2981 notes = "substitutional c in si by mbe",
2984 @Article{powell93_2,
2985 title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
2986 of the ternary system",
2987 journal = "J. Cryst. Growth",
2994 doi = "DOI: 10.1016/0022-0248(93)90653-E",
2995 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e",
2996 author = "A. R. Powell and K. Eberl and B. A. Ek and S. S.
3001 author = "H. J. Osten",
3002 title = "Modification of Growth Modes in Lattice-Mismatched
3003 Epitaxial Systems: Si/Ge",
3004 journal = "phys. status solidi (a)",
3007 publisher = "WILEY-VCH Verlag",
3009 URL = "http://dx.doi.org/10.1002/pssa.2211450203",
3010 doi = "10.1002/pssa.2211450203",
3015 @Article{dietrich94,
3016 title = "Lattice distortion in a strain-compensated
3017 $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon",
3018 author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M.
3019 Methfessel and P. Zaumseil",
3020 journal = "Phys. Rev. B",
3023 pages = "17185--17190",
3027 doi = "10.1103/PhysRevB.49.17185",
3028 publisher = "American Physical Society",
3032 author = "H. J. Osten and E. Bugiel and P. Zaumseil",
3034 title = "Growth of an inverse tetragonal distorted SiGe layer
3035 on Si(001) by adding small amounts of carbon",
3038 journal = "Appl. Phys. Lett.",
3041 pages = "3440--3442",
3042 keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON
3043 ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM;
3044 XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL
3046 URL = "http://link.aip.org/link/?APL/64/3440/1",
3047 doi = "10.1063/1.111235",
3048 notes = "inversely strained / distorted heterostructure",
3052 author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K.
3053 LeGoues and J. C. Tsang and F. Cardone",
3055 title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by
3056 molecular beam epitaxy",
3059 journal = "Appl. Phys. Lett.",
3063 keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS;
3064 SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM
3065 EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS;
3066 FILM GROWTH; MICROSTRUCTURE",
3067 URL = "http://link.aip.org/link/?APL/60/356/1",
3068 doi = "10.1063/1.106655",
3072 author = "H. J. Osten and J. Griesche and S. Scalese",
3074 title = "Substitutional carbon incorporation in epitaxial
3075 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
3076 molecular beam epitaxy",
3079 journal = "Appl. Phys. Lett.",
3083 keywords = "molecular beam epitaxial growth; semiconductor growth;
3084 wide band gap semiconductors; interstitials; silicon
3086 URL = "http://link.aip.org/link/?APL/74/836/1",
3087 doi = "10.1063/1.123384",
3088 notes = "substitutional c in si by mbe",
3092 author = "M. Born and R. Oppenheimer",
3093 title = "Zur Quantentheorie der Molekeln",
3094 journal = "Ann. Phys. (Leipzig)",
3097 publisher = "WILEY-VCH Verlag",
3099 URL = "http://dx.doi.org/10.1002/andp.19273892002",
3100 doi = "10.1002/andp.19273892002",
3105 @Article{hohenberg64,
3106 title = "Inhomogeneous Electron Gas",
3107 author = "P. Hohenberg and W. Kohn",
3108 journal = "Phys. Rev.",
3111 pages = "B864--B871",
3115 doi = "10.1103/PhysRev.136.B864",
3116 publisher = "American Physical Society",
3117 notes = "density functional theory, dft",
3121 title = "The calculation of atomic fields",
3122 author = "L. H. Thomas",
3123 journal = "Proc. Cambridge Philos. Soc.",
3127 doi = "10.1017/S0305004100011683",
3132 author = "E. Fermi",
3133 journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat.
3141 title = "The Wave Mechanics of an Atom with a Non-Coulomb
3142 Central Field. Part {I}. Theory and Methods",
3143 author = "D. R. Hartree",
3144 journal = "Proc. Cambridge Philos. Soc.",
3148 doi = "10.1017/S0305004100011919",
3152 title = "The Theory of Complex Spectra",
3153 author = "J. C. Slater",
3154 journal = "Phys. Rev.",
3157 pages = "1293--1322",
3161 doi = "10.1103/PhysRev.34.1293",
3162 publisher = "American Physical Society",
3166 title = "Self-Consistent Equations Including Exchange and
3167 Correlation Effects",
3168 author = "W. Kohn and L. J. Sham",
3169 journal = "Phys. Rev.",
3172 pages = "A1133--A1138",
3176 doi = "10.1103/PhysRev.140.A1133",
3177 publisher = "American Physical Society",
3178 notes = "dft, exchange and correlation",
3182 title = "Density Functional and Density Matrix Method Scaling
3183 Linearly with the Number of Atoms",
3185 journal = "Phys. Rev. Lett.",
3188 pages = "3168--3171",
3192 doi = "10.1103/PhysRevLett.76.3168",
3193 publisher = "American Physical Society",
3197 title = "Edge Electron Gas",
3198 author = "Walter Kohn and Ann E. Mattsson",
3199 journal = "Phys. Rev. Lett.",
3202 pages = "3487--3490",
3206 doi = "10.1103/PhysRevLett.81.3487",
3207 publisher = "American Physical Society",
3211 title = "Nobel Lecture: Electronic structure of matter---wave
3212 functions and density functionals",
3214 journal = "Rev. Mod. Phys.",
3217 pages = "1253--1266",
3221 doi = "10.1103/RevModPhys.71.1253",
3222 publisher = "American Physical Society",
3226 title = "Iterative minimization techniques for ab initio
3227 total-energy calculations: molecular dynamics and
3228 conjugate gradients",
3229 author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A.
3230 Arias and J. D. Joannopoulos",
3231 journal = "Rev. Mod. Phys.",
3234 pages = "1045--1097",
3238 doi = "10.1103/RevModPhys.64.1045",
3239 publisher = "American Physical Society",
3243 title = "Electron densities in search of Hamiltonians",
3244 author = "Mel Levy",
3245 journal = "Phys. Rev. A",
3248 pages = "1200--1208",
3252 doi = "10.1103/PhysRevA.26.1200",
3253 publisher = "American Physical Society",
3257 title = "Strain-stabilized highly concentrated pseudomorphic
3258 $Si1-x$$Cx$ layers in Si",
3259 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
3261 journal = "Phys. Rev. Lett.",
3264 pages = "3578--3581",
3268 doi = "10.1103/PhysRevLett.72.3578",
3269 publisher = "American Physical Society",
3270 notes = "high c concentration in si, heterostructure, strained
3275 title = "Phosphorous Doping of Strain-Induced
3276 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
3277 by Low-Temperature Chemical Vapor Deposition",
3278 author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
3279 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
3280 journal = "Japanese J. Appl. Phys.",
3282 number = "Part 1, No. 4B",
3283 pages = "2472--2475",
3286 URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
3287 doi = "10.1143/JJAP.41.2472",
3288 publisher = "The Japan Society of Applied Physics",
3289 notes = "experimental charge carrier mobility in strained si",
3293 title = "Electron Transport Model for Strained Silicon-Carbon
3295 author = "Shu-Tong Chang and Chung-Yi Lin",
3296 journal = "Japanese J. Appl. Phys.",
3299 pages = "2257--2262",
3302 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
3303 doi = "10.1143/JJAP.44.2257",
3304 publisher = "The Japan Society of Applied Physics",
3305 notes = "enhance of electron mobility in strained si",
3308 @Article{kissinger94,
3309 author = "W. Kissinger and M. Weidner and H. J. Osten and M.
3312 title = "Optical transitions in strained Si[sub 1 - y]{C}[sub
3313 y] layers on Si(001)",
3316 journal = "Appl. Phys. Lett.",
3319 pages = "3356--3358",
3320 keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS;
3321 CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION
3322 SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE;
3323 ENERGY LEVELS; ENERGYLEVEL TRANSITIONS",
3324 URL = "http://link.aip.org/link/?APL/65/3356/1",
3325 doi = "10.1063/1.112390",
3326 notes = "strained si influence on optical properties",
3330 author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P.
3333 title = "Substitutional versus interstitial carbon
3334 incorporation during pseudomorphic growth of Si[sub 1 -
3335 y]{C}[sub y] on Si(001)",
3338 journal = "J. Appl. Phys.",
3341 pages = "6711--6715",
3342 keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH;
3343 MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION;
3345 URL = "http://link.aip.org/link/?JAP/80/6711/1",
3346 doi = "10.1063/1.363797",
3347 notes = "mbe substitutional vs interstitial c incorporation",
3351 author = "H. J. Osten and P. Gaworzewski",
3353 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
3354 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
3358 journal = "J. Appl. Phys.",
3361 pages = "4977--4981",
3362 keywords = "silicon compounds; Ge-Si alloys; wide band gap
3363 semiconductors; semiconductor epitaxial layers; carrier
3364 density; Hall mobility; interstitials; defect states",
3365 URL = "http://link.aip.org/link/?JAP/82/4977/1",
3366 doi = "10.1063/1.366364",
3367 notes = "charge transport in strained si",
3371 title = "Carbon-mediated aggregation of self-interstitials in
3372 silicon: {A} large-scale molecular dynamics study",
3373 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
3374 journal = "Phys. Rev. B",
3381 doi = "10.1103/PhysRevB.69.155214",
3382 publisher = "American Physical Society",
3383 notes = "simulation using promising tersoff reparametrization",
3387 title = "Event-Based Relaxation of Continuous Disordered
3389 author = "G. T. Barkema and Normand Mousseau",
3390 journal = "Phys. Rev. Lett.",
3393 pages = "4358--4361",
3397 doi = "10.1103/PhysRevLett.77.4358",
3398 publisher = "American Physical Society",
3399 notes = "activation relaxation technique, art, speed up slow
3404 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
3405 Minoukadeh and F. Willaime",
3407 title = "Some improvements of the activation-relaxation
3408 technique method for finding transition pathways on
3409 potential energy surfaces",
3412 journal = "J. Chem. Phys.",
3418 keywords = "eigenvalues and eigenfunctions; iron; potential energy
3419 surfaces; vacancies (crystal)",
3420 URL = "http://link.aip.org/link/?JCP/130/114711/1",
3421 doi = "10.1063/1.3088532",
3422 notes = "improvements to art, refs for methods to find
3423 transition pathways",
3426 @Article{parrinello81,
3427 author = "M. Parrinello and A. Rahman",
3429 title = "Polymorphic transitions in single crystals: {A} new
3430 molecular dynamics method",
3433 journal = "J. Appl. Phys.",
3436 pages = "7182--7190",
3437 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
3438 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
3439 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
3440 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
3441 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
3443 URL = "http://link.aip.org/link/?JAP/52/7182/1",
3444 doi = "10.1063/1.328693",
3447 @Article{stillinger85,
3448 title = "Computer simulation of local order in condensed phases
3450 author = "Frank H. Stillinger and Thomas A. Weber",
3451 journal = "Phys. Rev. B",
3454 pages = "5262--5271",
3458 doi = "10.1103/PhysRevB.31.5262",
3459 publisher = "American Physical Society",
3463 title = "Empirical potential for hydrocarbons for use in
3464 simulating the chemical vapor deposition of diamond
3466 author = "Donald W. Brenner",
3467 journal = "Phys. Rev. B",
3470 pages = "9458--9471",
3474 doi = "10.1103/PhysRevB.42.9458",
3475 publisher = "American Physical Society",
3476 notes = "brenner hydro carbons",
3480 title = "Modeling of Covalent Bonding in Solids by Inversion of
3481 Cohesive Energy Curves",
3482 author = "Martin Z. Bazant and Efthimios Kaxiras",
3483 journal = "Phys. Rev. Lett.",
3486 pages = "4370--4373",
3490 doi = "10.1103/PhysRevLett.77.4370",
3491 publisher = "American Physical Society",
3492 notes = "first si edip",
3496 title = "Environment-dependent interatomic potential for bulk
3498 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
3500 journal = "Phys. Rev. B",
3503 pages = "8542--8552",
3507 doi = "10.1103/PhysRevB.56.8542",
3508 publisher = "American Physical Society",
3509 notes = "second si edip",
3513 title = "Interatomic potential for silicon defects and
3515 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
3516 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
3517 journal = "Phys. Rev. B",
3520 pages = "2539--2550",
3524 doi = "10.1103/PhysRevB.58.2539",
3525 publisher = "American Physical Society",
3526 notes = "latest si edip, good dislocation explanation",
3530 journal = "{PARCAS} molecular dynamics code",
3531 author = "K. Nordlund",
3536 title = "Hyperdynamics: Accelerated Molecular Dynamics of
3538 author = "Arthur F. Voter",
3539 journal = "Phys. Rev. Lett.",
3542 pages = "3908--3911",
3546 doi = "10.1103/PhysRevLett.78.3908",
3547 publisher = "American Physical Society",
3548 notes = "hyperdynamics, accelerated md",
3552 author = "Arthur F. Voter",
3554 title = "A method for accelerating the molecular dynamics
3555 simulation of infrequent events",
3558 journal = "J. Chem. Phys.",
3561 pages = "4665--4677",
3562 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
3563 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
3564 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
3565 energy functions; surface diffusion; reaction kinetics
3566 theory; potential energy surfaces",
3567 URL = "http://link.aip.org/link/?JCP/106/4665/1",
3568 doi = "10.1063/1.473503",
3569 notes = "improved hyperdynamics md",
3572 @Article{sorensen2000,
3573 author = "Mads R. S{\o }rensen and Arthur F. Voter",
3575 title = "Temperature-accelerated dynamics for simulation of
3579 journal = "J. Chem. Phys.",
3582 pages = "9599--9606",
3583 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
3584 MOLECULAR DYNAMICS METHOD; surface diffusion",
3585 URL = "http://link.aip.org/link/?JCP/112/9599/1",
3586 doi = "10.1063/1.481576",
3587 notes = "temperature accelerated dynamics, tad",
3591 title = "Parallel replica method for dynamics of infrequent
3593 author = "Arthur F. Voter",
3594 journal = "Phys. Rev. B",
3597 pages = "R13985--R13988",
3601 doi = "10.1103/PhysRevB.57.R13985",
3602 publisher = "American Physical Society",
3603 notes = "parallel replica method, accelerated md",
3607 author = "Xiongwu Wu and Shaomeng Wang",
3609 title = "Enhancing systematic motion in molecular dynamics
3613 journal = "J. Chem. Phys.",
3616 pages = "9401--9410",
3617 keywords = "molecular dynamics method; argon; Lennard-Jones
3618 potential; crystallisation; liquid theory",
3619 URL = "http://link.aip.org/link/?JCP/110/9401/1",
3620 doi = "10.1063/1.478948",
3621 notes = "self guided md, sgmd, accelerated md, enhancing
3625 @Article{choudhary05,
3626 author = "Devashish Choudhary and Paulette Clancy",
3628 title = "Application of accelerated molecular dynamics schemes
3629 to the production of amorphous silicon",
3632 journal = "J. Chem. Phys.",
3638 keywords = "molecular dynamics method; silicon; glass structure;
3639 amorphous semiconductors",
3640 URL = "http://link.aip.org/link/?JCP/122/154509/1",
3641 doi = "10.1063/1.1878733",
3642 notes = "explanation of sgmd and hyper md, applied to amorphous
3647 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
3649 title = "Carbon precipitation in silicon: Why is it so
3653 journal = "Appl. Phys. Lett.",
3656 pages = "3336--3338",
3657 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
3658 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
3660 URL = "http://link.aip.org/link/?APL/62/3336/1",
3661 doi = "10.1063/1.109063",
3662 notes = "interfacial energy of cubic sic and si, si self
3663 interstitials necessary for precipitation, volume
3664 decrease, high interface energy",
3667 @Article{chaussende08,
3668 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
3669 journal = "J. Cryst. Growth",
3674 note = "Proceedings of the E-MRS Conference, Symposium G -
3675 Substrates of Wide Bandgap Materials",
3677 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
3678 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
3679 author = "D. Chaussende and F. Mercier and A. Boulle and F.
3680 Conchon and M. Soueidan and G. Ferro and A. Mantzari
3681 and A. Andreadou and E. K. Polychroniadis and C.
3682 Balloud and S. Juillaguet and J. Camassel and M. Pons",
3683 notes = "3c-sic crystal growth, sic fabrication + links,
3687 @Article{chaussende07,
3688 author = "D. Chaussende and P. J. Wellmann and M. Pons",
3689 title = "Status of Si{C} bulk growth processes",
3690 journal = "J. Phys. D",
3694 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
3696 notes = "review of sic single crystal growth methods, process
3701 title = "Forces in Molecules",
3702 author = "R. P. Feynman",
3703 journal = "Phys. Rev.",
3710 doi = "10.1103/PhysRev.56.340",
3711 publisher = "American Physical Society",
3712 notes = "hellmann feynman forces",
3716 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
3717 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
3718 their Contrasting Properties",
3719 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
3721 journal = "Phys. Rev. Lett.",
3728 doi = "10.1103/PhysRevLett.84.943",
3729 publisher = "American Physical Society",
3730 notes = "si sio2 and sic sio2 interface",
3733 @Article{djurabekova08,
3734 title = "Atomistic simulation of the interface structure of Si
3735 nanocrystals embedded in amorphous silica",
3736 author = "Flyura Djurabekova and Kai Nordlund",
3737 journal = "Phys. Rev. B",
3744 doi = "10.1103/PhysRevB.77.115325",
3745 publisher = "American Physical Society",
3746 notes = "nc-si in sio2, interface energy, nc construction,
3747 angular distribution, coordination",
3751 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
3752 W. Liang and J. Zou",
3754 title = "Nature of interfacial defects and their roles in
3755 strain relaxation at highly lattice mismatched
3756 3{C}-Si{C}/Si (001) interface",
3759 journal = "J. Appl. Phys.",
3765 keywords = "anelastic relaxation; crystal structure; dislocations;
3766 elemental semiconductors; semiconductor growth;
3767 semiconductor thin films; silicon; silicon compounds;
3768 stacking faults; wide band gap semiconductors",
3769 URL = "http://link.aip.org/link/?JAP/106/073522/1",
3770 doi = "10.1063/1.3234380",
3771 notes = "sic/si interface, follow refs, tem image
3772 deconvolution, dislocation defects",
3775 @Article{kitabatake93,
3776 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
3779 title = "Simulations and experiments of Si{C} heteroepitaxial
3780 growth on Si(001) surface",
3783 journal = "J. Appl. Phys.",
3786 pages = "4438--4445",
3787 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
3788 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
3789 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
3790 URL = "http://link.aip.org/link/?JAP/74/4438/1",
3791 doi = "10.1063/1.354385",
3792 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
3796 @Article{kitabatake97,
3797 author = "Makoto Kitabatake",
3798 title = "Simulations and Experiments of 3{C}-Si{C}/Si
3799 Heteroepitaxial Growth",
3800 publisher = "WILEY-VCH Verlag",
3802 journal = "phys. status solidi (b)",
3805 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3806 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
3807 notes = "3c-sic heteroepitaxial growth on si off-axis model",
3811 title = "Strain relaxation and thermal stability of the
3812 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
3814 journal = "Thin Solid Films",
3821 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
3822 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
3823 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
3824 keywords = "Strain relaxation",
3825 keywords = "Interfaces",
3826 keywords = "Thermal stability",
3827 keywords = "Molecular dynamics",
3828 notes = "tersoff sic/si interface study",
3832 title = "Ab initio Study of Misfit Dislocations at the
3833 $Si{C}/Si(001)$ Interface",
3834 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
3836 journal = "Phys. Rev. Lett.",
3843 doi = "10.1103/PhysRevLett.89.156101",
3844 publisher = "American Physical Society",
3845 notes = "sic/si interface study",
3848 @Article{pizzagalli03,
3849 title = "Theoretical investigations of a highly mismatched
3850 interface: Si{C}/Si(001)",
3851 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
3853 journal = "Phys. Rev. B",
3860 doi = "10.1103/PhysRevB.68.195302",
3861 publisher = "American Physical Society",
3862 notes = "tersoff md and ab initio sic/si interface study",
3866 title = "Atomic configurations of dislocation core and twin
3867 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
3868 electron microscopy",
3869 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
3870 H. Zheng and J. W. Liang",
3871 journal = "Phys. Rev. B",
3878 doi = "10.1103/PhysRevB.75.184103",
3879 publisher = "American Physical Society",
3880 notes = "hrem image deconvolution on 3c-sic on si, distinguish
3884 @Article{hornstra58,
3885 title = "Dislocations in the diamond lattice",
3886 journal = "J. Phys. Chem. Solids",
3893 doi = "DOI: 10.1016/0022-3697(58)90138-0",
3894 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
3895 author = "J. Hornstra",
3896 notes = "dislocations in diamond lattice",
3900 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
3901 Ion `Hot' Implantation",
3902 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
3903 Hirao and Naoki Arai and Tomio Izumi",
3904 journal = "Japanese J. Appl. Phys.",
3906 number = "Part 1, No. 2A",
3910 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
3911 doi = "10.1143/JJAP.31.343",
3912 publisher = "The Japan Society of Applied Physics",
3913 notes = "c-c bonds in c implanted si, hot implantation
3914 efficiency, c-c hard to break by thermal annealing",
3917 @Article{eichhorn99,
3918 author = "F. Eichhorn and N. Schell and W. Matz and R.
3921 title = "Strain and Si{C} particle formation in silicon
3922 implanted with carbon ions of medium fluence studied by
3923 synchrotron x-ray diffraction",
3926 journal = "J. Appl. Phys.",
3929 pages = "4184--4187",
3930 keywords = "silicon; carbon; elemental semiconductors; chemical
3931 interdiffusion; ion implantation; X-ray diffraction;
3932 precipitation; semiconductor doping",
3933 URL = "http://link.aip.org/link/?JAP/86/4184/1",
3934 doi = "10.1063/1.371344",
3935 notes = "sic conversion by ibs, detected substitutional carbon,
3936 expansion of si lattice",
3939 @Article{eichhorn02,
3940 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
3941 Metzger and W. Matz and R. K{\"{o}}gler",
3943 title = "Structural relation between Si and Si{C} formed by
3944 carbon ion implantation",
3947 journal = "J. Appl. Phys.",
3950 pages = "1287--1292",
3951 keywords = "silicon compounds; wide band gap semiconductors; ion
3952 implantation; annealing; X-ray scattering; transmission
3953 electron microscopy",
3954 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3955 doi = "10.1063/1.1428105",
3956 notes = "3c-sic alignement to si host in ibs depending on
3957 temperature, might explain c into c sub trafo",
3961 author = "G Lucas and M Bertolus and L Pizzagalli",
3962 title = "An environment-dependent interatomic potential for
3963 silicon carbide: calculation of bulk properties,
3964 high-pressure phases, point and extended defects, and
3965 amorphous structures",
3966 journal = "J. Phys.: Condens. Matter",
3970 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3976 author = "J Godet and L Pizzagalli and S Brochard and P
3978 title = "Comparison between classical potentials and ab initio
3979 methods for silicon under large shear",
3980 journal = "J. Phys.: Condens. Matter",
3984 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3986 notes = "comparison of empirical potentials, stillinger weber,
3987 edip, tersoff, ab initio",
3990 @Article{moriguchi98,
3991 title = "Verification of Tersoff's Potential for Static
3992 Structural Analysis of Solids of Group-{IV} Elements",
3993 author = "Koji Moriguchi and Akira Shintani",
3994 journal = "Japanese J. Appl. Phys.",
3996 number = "Part 1, No. 2",
4000 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
4001 doi = "10.1143/JJAP.37.414",
4002 publisher = "The Japan Society of Applied Physics",
4003 notes = "tersoff stringent test",
4006 @Article{mazzarolo01,
4007 title = "Low-energy recoils in crystalline silicon: Quantum
4009 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
4010 Lulli and Eros Albertazzi",
4011 journal = "Phys. Rev. B",
4018 doi = "10.1103/PhysRevB.63.195207",
4019 publisher = "American Physical Society",
4022 @Article{holmstroem08,
4023 title = "Threshold defect production in silicon determined by
4024 density functional theory molecular dynamics
4026 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
4027 journal = "Phys. Rev. B",
4034 doi = "10.1103/PhysRevB.78.045202",
4035 publisher = "American Physical Society",
4036 notes = "threshold displacement comparison empirical and ab
4040 @Article{nordlund97,
4041 title = "Repulsive interatomic potentials calculated using
4042 Hartree-Fock and density-functional theory methods",
4043 journal = "Nucl. Instrum. Methods Phys. Res. B",
4050 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
4051 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
4052 author = "K. Nordlund and N. Runeberg and D. Sundholm",
4053 notes = "repulsive ab initio potential",
4057 title = "Efficiency of ab-initio total energy calculations for
4058 metals and semiconductors using a plane-wave basis
4060 journal = "Comput. Mater. Sci.",
4067 doi = "DOI: 10.1016/0927-0256(96)00008-0",
4068 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
4069 author = "G. Kresse and J. Furthm{\"{u}}ller",
4074 title = "Projector augmented-wave method",
4075 author = "P. E. Bl{\"o}chl",
4076 journal = "Phys. Rev. B",
4079 pages = "17953--17979",
4083 doi = "10.1103/PhysRevB.50.17953",
4084 publisher = "American Physical Society",
4085 notes = "paw method",
4088 @InCollection{cohen70,
4089 title = "The Fitting of Pseudopotentials to Experimental Data
4090 and Their Subsequent Application",
4091 editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
4092 publisher = "Academic Press",
4096 series = "Solid State Physics",
4098 doi = "DOI: 10.1016/S0081-1947(08)60070-3",
4099 URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3",
4100 author = "Marvin L. Cohen and Volker Heine",
4104 title = "Nanostructures: Theory and Modelling",
4105 author = "Christophe Delerue and Michel Lannoo",
4107 publisher = "Springer",
4111 title = "Development of a nanoelectronic 3-{D} ({NEMO} 3-{D})
4112 simulator for multimillion atom simulations and its
4113 application to alloyed quantum dots",
4114 author = "Gerhard Klimeck and Fabiano Oyafuso and Timothy B
4115 Boykin and R Chris Bowen and Paul von Allmen",
4117 journal = "Comput. Modeling Eng. Sci.",
4123 title = "Atomistic simulation of realistically sized
4124 nanodevices using {NEMO} 3-{D}¿Part {I}: Models and
4126 author = "Gerhard Klimeck and Shaikh Shahid Ahmed and Hansang
4127 Bae and Neerav Kharche and Steve Clark and Benjamin
4128 Haley and Sunhee Lee and Maxim Naumov and Hoon Ryu and
4129 Faisal Saied and others",
4130 journal = "Electron Devices, IEEE Transactions on",
4133 pages = "2079--2089",
4139 title = "Norm-Conserving Pseudopotentials",
4140 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
4141 journal = "Phys. Rev. Lett.",
4144 pages = "1494--1497",
4148 doi = "10.1103/PhysRevLett.43.1494",
4149 publisher = "American Physical Society",
4150 notes = "norm-conserving pseudopotentials",
4153 @Article{kleinman82,
4154 journal = "Phys. Rev. Lett.",
4156 doi = "10.1103/PhysRevLett.48.1425",
4158 author = "Leonard Kleinman and D. M. Bylander",
4159 title = "Efficacious Form for Model Pseudopotentials",
4161 URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425",
4162 publisher = "American Physical Society",
4163 pages = "1425--1428",
4167 @Article{troullier91,
4168 title = "Efficient pseudopotentials for plane-wave
4170 author = "N. Troullier and Jos\'e Luriaas Martins",
4171 journal = "Phys. Rev. B",
4174 pages = "1993--2006",
4178 doi = "10.1103/PhysRevB.43.1993",
4179 publisher = "American Physical Society",
4182 @Article{vanderbilt90,
4183 title = "Soft self-consistent pseudopotentials in a generalized
4184 eigenvalue formalism",
4185 author = "David Vanderbilt",
4186 journal = "Phys. Rev. B",
4189 pages = "7892--7895",
4193 doi = "10.1103/PhysRevB.41.7892",
4194 publisher = "American Physical Society",
4195 notes = "vasp pseudopotentials",
4198 @Article{ceperley80,
4199 title = "Ground State of the Electron Gas by a Stochastic
4201 author = "D. M. Ceperley and B. J. Alder",
4202 journal = "Phys. Rev. Lett.",
4209 doi = "10.1103/PhysRevLett.45.566",
4210 publisher = "American Physical Society",
4214 title = "Self-interaction correction to density-functional
4215 approximations for many-electron systems",
4216 author = "J. P. Perdew and Alex Zunger",
4217 journal = "Phys. Rev. B",
4220 pages = "5048--5079",
4224 doi = "10.1103/PhysRevB.23.5048",
4225 publisher = "American Physical Society",
4229 title = "Accurate and simple density functional for the
4230 electronic exchange energy: Generalized gradient
4232 author = "John P. Perdew and Yue Wang",
4233 journal = "Phys. Rev. B",
4236 pages = "8800--8802",
4240 doi = "10.1103/PhysRevB.33.8800",
4241 publisher = "American Physical Society",
4242 notes = "rapid communication gga",
4246 title = "Generalized gradient approximations for exchange and
4247 correlation: {A} look backward and forward",
4248 journal = "Physica B",
4255 doi = "DOI: 10.1016/0921-4526(91)90409-8",
4256 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
4257 author = "John P. Perdew",
4258 notes = "gga overview",
4262 title = "Atoms, molecules, solids, and surfaces: Applications
4263 of the generalized gradient approximation for exchange
4265 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
4266 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
4267 and Carlos Fiolhais",
4268 journal = "Phys. Rev. B",
4271 pages = "6671--6687",
4275 doi = "10.1103/PhysRevB.46.6671",
4276 publisher = "American Physical Society",
4277 notes = "gga pw91 (as in vasp)",
4281 title = "Special Points in the Brillouin Zone",
4282 author = "D. J. Chadi and Marvin L. Cohen",
4283 journal = "Phys. Rev. B",
4286 pages = "5747--5753",
4290 doi = "10.1103/PhysRevB.8.5747",
4291 publisher = "American Physical Society",
4294 @Article{baldereschi73,
4295 title = "Mean-Value Point in the Brillouin Zone",
4296 author = "A. Baldereschi",
4297 journal = "Phys. Rev. B",
4300 pages = "5212--5215",
4304 doi = "10.1103/PhysRevB.7.5212",
4305 publisher = "American Physical Society",
4306 notes = "mean value k point",
4309 @Article{monkhorst76,
4310 title = "Special points for Brillouin-zone integrations",
4311 author = "Hendrik J. Monkhorst and James D. Pack",
4312 journal = "Phys. Rev. B",
4315 pages = "5188--5192",
4319 doi = "10.1103/PhysRevB.13.5188",
4320 publisher = "American Physical Society",
4324 title = "Ab initio pseudopotential calculations of dopant
4326 journal = "Comput. Mater. Sci.",
4333 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
4334 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
4335 author = "Jing Zhu",
4336 keywords = "TED (transient enhanced diffusion)",
4337 keywords = "Boron dopant",
4338 keywords = "Carbon dopant",
4339 keywords = "Defect",
4340 keywords = "ab initio pseudopotential method",
4341 keywords = "Impurity cluster",
4342 notes = "binding of c to si interstitial, c in si defects",
4346 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
4348 title = "Si{C} buried layer formation by ion beam synthesis at
4352 journal = "Appl. Phys. Lett.",
4355 pages = "2646--2648",
4356 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
4357 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
4358 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
4359 ELECTRON MICROSCOPY",
4360 URL = "http://link.aip.org/link/?APL/66/2646/1",
4361 doi = "10.1063/1.113112",
4362 notes = "precipitation mechanism by substitutional carbon, si
4363 self interstitials react with further implanted c",
4367 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
4368 Kolodzey and A. Hairie",
4370 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
4374 journal = "J. Appl. Phys.",
4377 pages = "4631--4633",
4378 keywords = "silicon compounds; precipitation; localised modes;
4379 semiconductor epitaxial layers; infrared spectra;
4380 Fourier transform spectra; thermal stability;
4382 URL = "http://link.aip.org/link/?JAP/84/4631/1",
4383 doi = "10.1063/1.368703",
4384 notes = "coherent 3C-SiC, topotactic, critical coherence size",
4388 author = "R Jones and B J Coomer and P R Briddon",
4389 title = "Quantum mechanical modelling of defects in
4391 journal = "J. Phys.: Condens. Matter",
4395 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
4397 notes = "ab inito dft intro, vibrational modes, c defect in
4402 doi = "10.1103/RevModPhys.61.689",
4405 author = "R. O. Jones and O. Gunnarsson",
4407 URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689",
4408 publisher = "American Physical Society",
4409 title = "The density functional formalism, its applications and
4412 journal = "Rev. Mod. Phys.",
4414 notes = "dft intro",
4418 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
4419 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
4420 J. E. Greene and S. G. Bishop",
4422 title = "Carbon incorporation pathways and lattice sites in
4423 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
4424 molecular-beam epitaxy",
4427 journal = "J. Appl. Phys.",
4430 pages = "5716--5727",
4431 URL = "http://link.aip.org/link/?JAP/91/5716/1",
4432 doi = "10.1063/1.1465122",
4433 notes = "c substitutional incorporation pathway, dft and expt",
4437 title = "Dynamic properties of interstitial carbon and
4438 carbon-carbon pair defects in silicon",
4439 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
4441 journal = "Phys. Rev. B",
4444 pages = "2188--2194",
4448 doi = "10.1103/PhysRevB.55.2188",
4449 publisher = "American Physical Society",
4450 notes = "ab initio c in si and di-carbon defect, no formation
4451 energies, different migration barriers and paths",
4455 title = "Interstitial carbon and the carbon-carbon pair in
4456 silicon: Semiempirical electronic-structure
4458 author = "Matthew J. Burnard and Gary G. DeLeo",
4459 journal = "Phys. Rev. B",
4462 pages = "10217--10225",
4466 doi = "10.1103/PhysRevB.47.10217",
4467 publisher = "American Physical Society",
4468 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
4469 carbon defect, formation energies",
4473 title = "Electronic structure of interstitial carbon in
4475 author = "Morgan Besson and Gary G. DeLeo",
4476 journal = "Phys. Rev. B",
4479 pages = "4028--4033",
4483 doi = "10.1103/PhysRevB.43.4028",
4484 publisher = "American Physical Society",
4488 title = "Review of atomistic simulations of surface diffusion
4489 and growth on semiconductors",
4490 journal = "Comput. Mater. Sci.",
4495 note = "Proceedings of the Workshop on Virtual Molecular Beam
4498 doi = "DOI: 10.1016/0927-0256(96)00030-4",
4499 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
4500 author = "Efthimios Kaxiras",
4501 notes = "might contain c 100 db formation energy, overview md,
4502 tight binding, first principles",
4505 @Article{kaukonen98,
4506 title = "Effect of {N} and {B} doping on the growth of {CVD}
4508 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
4510 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
4511 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
4513 journal = "Phys. Rev. B",
4516 pages = "9965--9970",
4520 doi = "10.1103/PhysRevB.57.9965",
4521 publisher = "American Physical Society",
4522 notes = "constrained conjugate gradient relaxation technique
4527 title = "Correlation between the antisite pair and the ${DI}$
4529 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
4530 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
4532 journal = "Phys. Rev. B",
4539 doi = "10.1103/PhysRevB.67.155203",
4540 publisher = "American Physical Society",
4544 title = "Production and recovery of defects in Si{C} after
4545 irradiation and deformation",
4546 journal = "J. Nucl. Mater.",
4549 pages = "1803--1808",
4553 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
4554 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
4555 author = "J. Chen and P. Jung and H. Klein",
4559 title = "Accumulation, dynamic annealing and thermal recovery
4560 of ion-beam-induced disorder in silicon carbide",
4561 journal = "Nucl. Instrum. Methods Phys. Res. B",
4568 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
4569 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
4570 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
4573 @Article{bockstedte03,
4574 title = "Ab initio study of the migration of intrinsic defects
4576 author = "Michel Bockstedte and Alexander Mattausch and Oleg
4578 journal = "Phys. Rev. B",
4585 doi = "10.1103/PhysRevB.68.205201",
4586 publisher = "American Physical Society",
4587 notes = "defect migration in sic",
4591 title = "Theoretical study of vacancy diffusion and
4592 vacancy-assisted clustering of antisites in Si{C}",
4593 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
4595 journal = "Phys. Rev. B",
4602 doi = "10.1103/PhysRevB.68.155208",
4603 publisher = "American Physical Society",
4607 journal = "Telegrafiya i Telefoniya bez Provodov",
4611 author = "O. V. Lossev",
4615 title = "Luminous carborundum detector and detection effect and
4616 oscillations with crystals",
4617 journal = "Philos. Mag. Series 7",
4620 pages = "1024--1044",
4622 URL = "http://www.informaworld.com/10.1080/14786441108564683",
4623 author = "O. V. Lossev",
4627 journal = "Physik. Zeitschr.",
4631 author = "O. V. Lossev",
4635 journal = "Physik. Zeitschr.",
4639 author = "O. V. Lossev",
4643 journal = "Physik. Zeitschr.",
4647 author = "O. V. Lossev",
4651 title = "A note on carborundum",
4652 journal = "Electrical World",
4656 author = "H. J. Round",
4659 @Article{vashishath08,
4660 title = "Recent trends in silicon carbide device research",
4661 journal = "Mj. Int. J. Sci. Tech.",
4666 author = "Munish Vashishath and Ashoke K. Chatterjee",
4667 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
4668 notes = "sic polytype electronic properties",
4672 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
4674 title = "Growth and Properties of beta-Si{C} Single Crystals",
4677 journal = "J. Appl. Phys.",
4681 URL = "http://link.aip.org/link/?JAP/37/333/1",
4682 doi = "10.1063/1.1707837",
4683 notes = "sic melt growth",
4687 author = "A. E. van Arkel and J. H. de Boer",
4688 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
4690 publisher = "WILEY-VCH Verlag GmbH",
4692 journal = "Z. Anorg. Chem.",
4695 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
4696 doi = "10.1002/zaac.19251480133",
4697 notes = "van arkel apparatus",
4701 author = "K. Moers",
4703 journal = "Z. Anorg. Chem.",
4706 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4711 author = "J. T. Kendall",
4712 title = "Electronic Conduction in Silicon Carbide",
4715 journal = "J. Chem. Phys.",
4719 URL = "http://link.aip.org/link/?JCP/21/821/1",
4720 notes = "sic by van arkel apparatus, pyrolitical vapor growth
4725 author = "J. A. Lely",
4727 journal = "Ber. Deut. Keram. Ges.",
4730 notes = "lely sublimation growth process",
4733 @Article{knippenberg63,
4734 author = "W. F. Knippenberg",
4736 journal = "Philips Res. Repts.",
4739 notes = "acheson process",
4742 @Article{hoffmann82,
4743 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
4746 title = "Silicon carbide blue light emitting diodes with
4747 improved external quantum efficiency",
4750 journal = "J. Appl. Phys.",
4753 pages = "6962--6967",
4754 keywords = "light emitting diodes; silicon carbides; quantum
4755 efficiency; visible radiation; experimental data;
4756 epitaxy; fabrication; medium temperature; layers;
4757 aluminium; nitrogen; substrates; pn junctions;
4758 electroluminescence; spectra; current density;
4760 URL = "http://link.aip.org/link/?JAP/53/6962/1",
4761 doi = "10.1063/1.330041",
4762 notes = "blue led, sublimation process",
4766 author = "Philip Neudeck",
4767 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
4768 Road 44135 Cleveland OH",
4769 title = "Progress in silicon carbide semiconductor electronics
4771 journal = "J. Electron. Mater.",
4772 publisher = "Springer Boston",
4774 keyword = "Chemistry and Materials Science",
4778 URL = "http://dx.doi.org/10.1007/BF02659688",
4779 note = "10.1007/BF02659688",
4781 notes = "sic data, advantages of 3c sic",
4784 @InProceedings{pribble02,
4785 author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
4786 R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
4787 and J. J. Sumakeris and A. W. Saxler and J. W.
4789 booktitle = "2002 IEEE MTT-S International Microwave Symposium
4791 title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
4792 power amplifier design",
4797 pages = "1819--1822",
4798 doi = "10.1109/MWSYM.2002.1012216",
4803 @InProceedings{temcamani01,
4804 author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
4805 Brylinski and P. Bannelier and B. Darges and J. P.
4807 booktitle = "2001 IEEE MTT-S International Microwave Symposium
4809 title = "Silicon carbide {MESFET}s performances and application
4810 in broadcast power amplifiers",
4816 doi = "10.1109/MWSYM.2001.966976",
4822 author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
4823 and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
4824 Kimoto and Hiroyuki Matsunami",
4825 title = "Traps at the Si{C}/Si{O2}-Interface",
4826 journal = "MRS Proc.",
4831 doi = "10.1557/PROC-640-H3.2",
4832 URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
4835 @Article{bhatnagar93,
4836 author = "M. Bhatnagar and B. J. Baliga",
4837 journal = "IEEE Trans. Electron Devices",
4838 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
4845 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
4846 rectifiers;Si;SiC;breakdown voltages;drift region
4847 properties;output characteristics;power MOSFETs;power
4848 semiconductor devices;switching characteristics;thermal
4849 analysis;Schottky-barrier diodes;electric breakdown of
4850 solids;insulated gate field effect transistors;power
4851 transistors;semiconductor materials;silicon;silicon
4852 compounds;solid-state rectifiers;thermal analysis;",
4853 doi = "10.1109/16.199372",
4855 notes = "comparison 3c 6h sic and si devices",
4859 author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W.
4861 journal = "IEEE Electron Device Lett.",
4862 title = "1800 {V} {NPN} bipolar junction transistors in
4869 keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction
4870 transistor;SiC;blocking voltage;current gain;deep level
4871 acceptor;minority carrier lifetime;on-resistance;power
4872 switching device;temperature coefficient;carrier
4873 lifetime;deep levels;minority carriers;power bipolar
4874 transistors;silicon compounds;wide band gap
4876 doi = "10.1109/55.910617",
4881 author = "B. J. Baliga",
4882 journal = "IEEE Trans. Electron Devices",
4883 title = "Trends in power semiconductor devices",
4888 pages = "1717--1731",
4889 keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated
4890 devices;MOS-gated thyristors;MPS rectifier;PIN
4891 rectifier;Schottky rectifier;Si;SiC;SiC based
4892 switches;TMBS rectifier;UMOS technology;VMOS
4893 technology;bipolar power transistor;high voltage power
4894 rectifiers;low voltage power rectifiers;power
4895 MOSFET;power losses;power semiconductor devices;power
4896 switch technology;review;semiconductor device
4897 technology;MOS-controlled thyristors;bipolar transistor
4898 switches;field effect transistor switches;gallium
4899 arsenide;insulated gate bipolar transistors;p-i-n
4900 diodes;power bipolar transistors;power field effect
4901 transistors;power semiconductor devices;power
4902 semiconductor diodes;power semiconductor
4903 switches;reviews;silicon;silicon compounds;solid-state
4904 rectifiers;thyristors;",
4905 doi = "10.1109/16.536818",
4909 @Article{bhatnagar92,
4910 author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga",
4911 journal = "IEEE Electron Device Lett.",
4912 title = "Silicon-carbide high-voltage (400 {V}) Schottky
4919 keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier
4921 voltages;characteristics;fabrication;forward I-V
4922 characteristics;forward voltage drop;on-state current
4923 density;rectifiers;reverse I-V characteristics;reverse
4924 recovery characteristics;sharp breakdown;temperature
4925 range;Schottky-barrier diodes;platinum;power
4926 electronics;semiconductor materials;silicon
4927 compounds;solid-state rectifiers;",
4928 doi = "10.1109/55.192814",
4933 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
4934 A. Powell and C. S. Salupo and L. G. Matus",
4935 journal = "IEEE Trans. Electron Devices",
4936 title = "Electrical properties of epitaxial 3{C}- and
4937 6{H}-Si{C} p-n junction diodes produced side-by-side on
4938 6{H}-Si{C} substrates",
4944 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
4945 C;6H-SiC layers;6H-SiC substrates;CVD
4946 process;SiC;chemical vapor deposition;doping;electrical
4947 properties;epitaxial layers;light
4948 emission;low-tilt-angle 6H-SiC substrates;p-n junction
4949 diodes;polytype;rectification characteristics;reverse
4950 leakage current;reverse voltages;temperature;leakage
4951 currents;power electronics;semiconductor
4952 diodes;semiconductor epitaxial layers;semiconductor
4953 growth;semiconductor materials;silicon
4954 compounds;solid-state rectifiers;substrates;vapour
4955 phase epitaxial growth;",
4956 doi = "10.1109/16.285038",
4958 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
4963 author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.}
4964 and K. Moore and K. K. Nordquist and S. Allen and C.
4965 Thero and M. Bhatnagar",
4966 journal = "IEEE Trans. Electron Devices",
4967 title = "Silicon carbide high-power devices",
4972 pages = "1732--1741",
4973 keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky
4974 barrier diodes;SiC;SiC devices;UMOSFET;current
4975 density;high electric breakdown field;high saturated
4976 electron drift velocity;high thermal
4977 conductivity;high-power devices;packaged SIT;submicron
4978 gate length MESFET;Schottky diodes;current
4979 density;electric breakdown;power MESFET;power
4980 MOSFET;power semiconductor devices;power semiconductor
4981 diodes;reviews;silicon compounds;static induction
4982 transistors;wide band gap semiconductors;",
4983 doi = "10.1109/16.536819",
4985 notes = "high power devices",
4989 author = "Lin Zhu and T. P. Chow",
4990 journal = "IEEE Trans. Electron Devices",
4991 title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers",
4996 pages = "1871--1874",
4997 keywords = "H-SiC;OFF-state characteristics;ON-state
4998 characteristics;blocking capability;high-voltage
4999 Schottky rectifier;junction barrier Schottky
5000 rectifier;lateral channel JBS rectifier;leakage
5001 current;pinlike reverse characteristics;Schottky
5002 barriers;Schottky diodes;leakage currents;rectifying
5004 doi = "10.1109/TED.2008.926642",
5009 author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W.
5010 Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond
5011 and G. Gati and J. M. Pimbley and W. E. Schneider",
5012 journal = "IEEE Trans. Electron Devices",
5013 title = "Silicon carbide {UV} photodiodes",
5019 keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV
5020 responsivity characteristics;low dark current;low light
5021 level UV detection;quantum
5022 efficiency;reproducibility;reverse current
5023 leakage;short circuit output current;leakage
5024 currents;photodiodes;semiconductor
5025 materials;short-circuit currents;silicon
5026 compounds;ultraviolet detectors;",
5027 doi = "10.1109/16.182509",
5029 notes = "sic photo diodes, uv detector",
5033 author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao
5034 and D. Franz and J. H. Zhao and M. Weiner",
5035 journal = "IEEE J. Quantum Electron.",
5036 title = "4{H}-Si{C} {UV} photo detectors with large area and
5037 very high specific detectivity",
5042 pages = "1315--1320",
5043 keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV
5044 photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes;
5045 SiC-Pt; leakage current; photoresponse spectra; quantum
5046 efficiency; specific detectivity; Schottky diodes;
5047 photodetectors; platinum; silicon compounds; wide band
5048 gap semiconductors;",
5049 doi = "10.1109/JQE.2004.833196",
5051 notes = "uv detector",
5055 author = "N. Schulze and D. L. Barrett and G. Pensl",
5057 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
5058 single crystals by physical vapor transport",
5061 journal = "Appl. Phys. Lett.",
5064 pages = "1632--1634",
5065 keywords = "silicon compounds; semiconductor materials;
5066 semiconductor growth; crystal growth from vapour;
5067 photoluminescence; Hall mobility",
5068 URL = "http://link.aip.org/link/?APL/72/1632/1",
5069 doi = "10.1063/1.121136",
5070 notes = "micropipe free 6h-sic pvt growth",
5074 author = "F. C. Frank",
5075 title = "Capillary equilibria of dislocated crystals",
5076 journal = "Acta Crystallogr.",
5082 doi = "10.1107/S0365110X51001690",
5083 URL = "http://dx.doi.org/10.1107/S0365110X51001690",
5084 notes = "micropipe",
5088 author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G.
5090 title = "Micropipes: Hollow Tubes in Silicon Carbide",
5091 journal = "phys. status solidi (a)",
5094 publisher = "WILEY-VCH Verlag",
5096 URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
5097 doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7",
5100 notes = "micropipe",
5103 @Article{neudeck94_2,
5104 author = "P. G. Neudeck and J. A. Powell",
5105 journal = "IEEE Electron Device Lett.",
5106 title = "Performance limiting micropipe defects in silicon
5113 keywords = "SiC;defect density;device ratings;epitaxially-grown pn
5114 junction devices;micropipe defects;power devices;power
5115 semiconductors;pre-avalanche reverse-bias point
5116 failures;p-n homojunctions;power
5117 electronics;semiconductor materials;silicon
5119 doi = "10.1109/55.285372",
5124 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
5126 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
5129 journal = "Appl. Phys. Lett.",
5133 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
5134 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
5135 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
5136 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
5138 URL = "http://link.aip.org/link/?APL/50/221/1",
5139 doi = "10.1063/1.97667",
5140 notes = "apb 3c-sic heteroepitaxy on si",
5143 @Article{shibahara86,
5144 title = "Surface morphology of cubic Si{C}(100) grown on
5145 Si(100) by chemical vapor deposition",
5146 journal = "J. Cryst. Growth",
5153 doi = "DOI: 10.1016/0022-0248(86)90158-2",
5154 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
5155 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
5157 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
5160 @Article{desjardins96,
5161 author = "P. Desjardins and J. E. Greene",
5163 title = "Step-flow epitaxial growth on two-domain surfaces",
5166 journal = "J. Appl. Phys.",
5169 pages = "1423--1434",
5170 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
5171 FILM GROWTH; SURFACE STRUCTURE",
5172 URL = "http://link.aip.org/link/?JAP/79/1423/1",
5173 doi = "10.1063/1.360980",
5174 notes = "apb model",
5178 author = "S. Henke and B. Stritzker and B. Rauschenbach",
5180 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
5181 carbonization of silicon",
5184 journal = "J. Appl. Phys.",
5187 pages = "2070--2073",
5188 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
5189 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
5191 URL = "http://link.aip.org/link/?JAP/78/2070/1",
5192 doi = "10.1063/1.360184",
5193 notes = "ssmbe of sic on si, lower temperatures",
5197 title = "Atomic layer epitaxy of cubic Si{C} by gas source
5198 {MBE} using surface superstructure",
5199 journal = "J. Cryst. Growth",
5206 doi = "DOI: 10.1016/0022-0248(89)90442-9",
5207 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
5208 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
5209 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
5210 notes = "gas source mbe of 3c-sic on 6h-sic",
5213 @Article{yoshinobu92,
5214 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
5215 and Takashi Fuyuki and Hiroyuki Matsunami",
5217 title = "Lattice-matched epitaxial growth of single crystalline
5218 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
5219 molecular beam epitaxy",
5222 journal = "Appl. Phys. Lett.",
5226 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
5227 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
5228 INTERFACE STRUCTURE",
5229 URL = "http://link.aip.org/link/?APL/60/824/1",
5230 doi = "10.1063/1.107430",
5231 notes = "gas source mbe of 3c-sic on 6h-sic",
5234 @Article{yoshinobu90,
5235 title = "Atomic level control in gas source {MBE} growth of
5237 journal = "J. Cryst. Growth",
5244 doi = "DOI: 10.1016/0022-0248(90)90575-6",
5245 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
5246 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
5247 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
5248 notes = "gas source mbe of 3c-sic on 3c-sic",
5252 title = "Atomic layer epitaxy controlled by surface
5253 superstructures in Si{C}",
5254 journal = "Thin Solid Films",
5261 doi = "DOI: 10.1016/0040-6090(93)90159-M",
5262 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
5263 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
5265 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
5270 title = "Microscopic mechanisms of accurate layer-by-layer
5271 growth of [beta]-Si{C}",
5272 journal = "Thin Solid Films",
5279 doi = "DOI: 10.1016/0040-6090(93)90162-I",
5280 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
5281 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
5282 and S. Misawa and E. Sakuma and S. Yoshida",
5283 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
5288 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
5290 title = "Effects of gas flow ratio on silicon carbide thin film
5291 growth mode and polytype formation during gas-source
5292 molecular beam epitaxy",
5295 journal = "Appl. Phys. Lett.",
5298 pages = "2851--2853",
5299 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
5300 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
5301 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
5303 URL = "http://link.aip.org/link/?APL/65/2851/1",
5304 doi = "10.1063/1.112513",
5305 notes = "gas source mbe of 6h-sic on 6h-sic",
5309 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
5310 title = "Heterointerface Control and Epitaxial Growth of
5311 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
5312 publisher = "WILEY-VCH Verlag",
5314 journal = "phys. status solidi (b)",
5317 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
5322 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
5323 journal = "J. Cryst. Growth",
5330 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
5331 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
5332 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
5333 keywords = "Reflection high-energy electron diffraction (RHEED)",
5334 keywords = "Scanning electron microscopy (SEM)",
5335 keywords = "Silicon carbide",
5336 keywords = "Silicon",
5337 keywords = "Island growth",
5338 notes = "lower temperature, 550-700",
5341 @Article{hatayama95,
5342 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
5343 on Si using hydrocarbon radicals by gas source
5344 molecular beam epitaxy",
5345 journal = "J. Cryst. Growth",
5352 doi = "DOI: 10.1016/0022-0248(95)80077-P",
5353 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
5354 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
5355 and Hiroyuki Matsunami",
5359 author = "Volker Heine and Ching Cheng and Richard J. Needs",
5360 title = "The Preference of Silicon Carbide for Growth in the
5361 Metastable Cubic Form",
5362 journal = "J. Am. Ceram. Soc.",
5365 publisher = "Blackwell Publishing Ltd",
5367 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
5368 doi = "10.1111/j.1151-2916.1991.tb06811.x",
5369 pages = "2630--2633",
5370 keywords = "silicon carbide, crystal growth, crystal structure,
5371 calculations, stability",
5373 notes = "3c-sic metastable, 3c-sic preferred growth, sic
5374 polytype dft calculation refs",
5377 @Article{allendorf91,
5378 title = "The adsorption of {H}-atoms on polycrystalline
5379 [beta]-silicon carbide",
5380 journal = "Surf. Sci.",
5387 doi = "DOI: 10.1016/0039-6028(91)90912-C",
5388 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
5389 author = "Mark D. Allendorf and Duane A. Outka",
5390 notes = "h adsorption on 3c-sic",
5393 @Article{eaglesham93,
5394 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
5395 D. P. Adams and S. M. Yalisove",
5397 title = "Effect of {H} on Si molecular-beam epitaxy",
5400 journal = "J. Appl. Phys.",
5403 pages = "6615--6618",
5404 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
5405 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
5406 DIFFUSION; ADSORPTION",
5407 URL = "http://link.aip.org/link/?JAP/74/6615/1",
5408 doi = "10.1063/1.355101",
5409 notes = "h incorporation on si surface, lower surface
5414 author = "Ronald C. Newman",
5415 title = "Carbon in Crystalline Silicon",
5416 journal = "MRS Proc.",
5421 doi = "10.1557/PROC-59-403",
5422 URL = "http://dx.doi.org/10.1557/PROC-59-403",
5423 eprint = "http://journals.cambridge.org/article_S194642740054367X",
5427 title = "The diffusivity of carbon in silicon",
5428 journal = "J. Phys. Chem. Solids",
5435 doi = "DOI: 10.1016/0022-3697(61)90032-4",
5436 URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
5437 author = "R. C. Newman and J. Wakefield",
5438 notes = "diffusivity of substitutional c in si",
5442 author = "U. Gösele",
5443 title = "The Role of Carbon and Point Defects in Silicon",
5444 journal = "MRS Proc.",
5449 doi = "10.1557/PROC-59-419",
5450 URL = "http://dx.doi.org/10.1557/PROC-59-419",
5451 eprint = "http://journals.cambridge.org/article_S1946427400543681",
5454 @Article{mukashev82,
5455 title = "Defects in Carbon-Implanted Silicon",
5456 author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
5457 Fukuoka and Haruo Saito",
5458 journal = "Japanese J. Appl. Phys.",
5460 number = "Part 1, No. 2",
5464 URL = "http://jjap.jsap.jp/link?JJAP/21/399/",
5465 doi = "10.1143/JJAP.21.399",
5466 publisher = "The Japan Society of Applied Physics",
5470 title = "Convergence of supercell calculations for point
5471 defects in semiconductors: Vacancy in silicon",
5472 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
5474 journal = "Phys. Rev. B",
5477 pages = "1318--1325",
5481 doi = "10.1103/PhysRevB.58.1318",
5482 publisher = "American Physical Society",
5483 notes = "convergence k point supercell size, vacancy in
5488 author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
5489 Romano-Rodr\'{\i}guez and J. R. Morante and R.
5490 K{\"{o}}gler and W. Skorupa",
5492 title = "Spectroscopic characterization of phases formed by
5493 high-dose carbon ion implantation in silicon",
5496 journal = "J. Appl. Phys.",
5499 pages = "2978--2984",
5500 keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
5501 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
5502 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
5503 DEPENDENCE; PRECIPITATES; ANNEALING",
5504 URL = "http://link.aip.org/link/?JAP/77/2978/1",
5505 doi = "10.1063/1.358714",
5508 @Article{romano-rodriguez96,
5509 title = "Detailed analysis of [beta]-Si{C} formation by high
5510 dose carbon ion implantation in silicon",
5511 journal = "Materials Science and Engineering B",
5516 note = "European Materials Research Society 1995 Spring
5517 Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and
5518 Oxygen in Silicon and in Other Elemental
5521 doi = "DOI: 10.1016/0921-5107(95)01283-4",
5522 URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408",
5523 author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio
5524 and A. Pérez-Rodríguez and J. R. Morante and R. Kögler
5526 keywords = "Silicon",
5527 keywords = "Ion implantation",
5528 notes = "incoherent 3c-sic precipitate",
5531 @Article{davidson75,
5532 title = "The iterative calculation of a few of the lowest
5533 eigenvalues and corresponding eigenvectors of large
5534 real-symmetric matrices",
5535 journal = "J. Comput. Phys.",
5542 doi = "DOI: 10.1016/0021-9991(75)90065-0",
5543 URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650",
5544 author = "Ernest R. Davidson",
5548 title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten
5550 author = "T. W. Adorno",
5551 ISBN = "978-3-518-01236-9",
5552 URL = "http://books.google.com/books?id=coZqRAAACAAJ",
5554 publisher = "Suhrkamp",
5557 @Misc{attenberger03,
5558 author = "Wilfried Attenberger and Jörg Lindner and Bernd
5560 title = "A {method} {for} {forming} {a} {layered}
5561 {semiconductor} {structure} {and} {corresponding}
5566 note = "WO 2003/034484 A3R4",
5568 howpublished = "Patent Application",
5570 filing_num = "EP0211423",
5575 ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
5576 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
5577 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
5579 abstract = "The following invention provides a method for forming
5580 a layered semiconductor structure having a layer (5) of
5581 a first semiconductor material on a substrate (1; 1')
5582 of at least one second semiconductor material,
5583 comprising the steps of: providing said substrate (1;
5584 1'); burying said layer (5) of said first semiconductor
5585 material in said substrate (1; 1'), said buried layer
5586 (5) having an upper surface (105) and a lower surface
5587 (105) and dividing said substrate (1; 1') into an upper
5588 part (1a) and a lower part (1b; 1b', 1c); creating a
5589 buried damage layer (10; 10'; 10'', 100'') which at
5590 least partly adjoins and/or at least partly includes
5591 said upper surface (105) of said buried layer (5); and
5592 removing said upper part (1a) of said substrate (1; 1')
5593 and said buried damage layer (10; 10'; 10'', 100'') for
5594 exposing said buried layer (5). The invention also
5595 provides a corresponding layered semiconductor
5600 author = "Alex Zunger",
5601 title = "Pseudopotential Theory of Semiconductor Quantum Dots",
5602 journal = "physica status solidi (b)",
5605 publisher = "WILEY-VCH Verlag Berlin GmbH",
5607 URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
5608 doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9",
5610 keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11,
5613 notes = "configuration-interaction method, ci",
5617 author = "Alex Zunger",
5618 title = "On the Farsightedness (hyperopia) of the Standard k ·
5620 journal = "physica status solidi (a)",
5623 publisher = "WILEY-VCH Verlag Berlin GmbH",
5625 URL = "http://dx.doi.org/10.1002/1521-396X(200204)190:2<467::AID-PSSA467>3.0.CO;2-4",
5626 doi = "10.1002/1521-396X(200204)190:2<467::AID-PSSA467>3.0.CO;2-4",
5628 keywords = "73.20.At, 73.21.Cd, 73.21.La, 73.22.¿b, 78.20.Bh",
5632 @Article{robertson90,
5633 author = "I. J. Robertson and M. C. Payne",
5634 title = "k-point sampling and the k.p method in pseudopotential
5635 total energy calculations",
5636 journal = "Journal of Physics: Condensed Matter",
5640 URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010",
5642 notes = "kp method",
5647 journal = "Phys. Rev. B",
5648 author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg
5651 URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101",
5652 doi = "10.1103/PhysRevB.84.085101",
5654 title = "Construction and performance of fully numerical
5655 optimum atomic basis sets",
5657 publisher = "American Physical Society",
5660 notes = "quamol, basis set, for planc",
5665 journal = "Phys. Rev. A",
5666 author = "Emilio Artacho and Lorenzo Mil\'ans del Bosch",
5668 URL = "http://link.aps.org/doi/10.1103/PhysRevA.43.5770",
5669 doi = "10.1103/PhysRevA.43.5770",
5671 title = "Nonorthogonal basis sets in quantum mechanics:
5672 Representations and second quantization",
5674 publisher = "American Physical Society",
5675 pages = "5770--5777",
5676 notes = "non-orthogonal basis set",
5680 author = "Per-Olov L{\"{o}}wdin",
5682 title = "On the Non-Orthogonality Problem Connected with the
5683 Use of Atomic Wave Functions in the Theory of Molecules
5687 journal = "The Journal of Chemical Physics",
5691 URL = "http://link.aip.org/link/?JCP/18/365/1",
5692 doi = "10.1063/1.1747632",
5693 notes = "non orthogonal basis set",
5697 author = "Per-Olov Löwdin",
5698 title = "Studies in perturbation theory {XIII}. Treatment of
5699 constants of motion in resolvent method, partitioning
5700 technique, and perturbation theory",
5701 journal = "International Journal of Quantum Chemistry",
5704 publisher = "John Wiley & Sons, Inc.",
5706 URL = "http://dx.doi.org/10.1002/qua.560020612",
5707 doi = "10.1002/qua.560020612",
5714 journal = "Phys. Rev. B",
5715 author = "D. J. Chadi",
5717 URL = "http://link.aps.org/doi/10.1103/PhysRevB.16.3572",
5718 doi = "10.1103/PhysRevB.16.3572",
5720 title = "Localized-orbital description of wave functions and
5721 energy bands in semiconductors",
5723 publisher = "American Physical Society",
5724 pages = "3572--3578",
5725 notes = "localized orbitals",
5730 journal = "Phys. Rev.",
5731 author = "E. Wigner and F. Seitz",
5733 URL = "http://link.aps.org/doi/10.1103/PhysRev.43.804",
5734 doi = "10.1103/PhysRev.43.804",
5736 title = "On the Constitution of Metallic Sodium",
5738 publisher = "American Physical Society",
5740 notes = "wigner seitz method",
5745 journal = "Phys. Rev.",
5746 author = "Conyers Herring",
5748 URL = "http://link.aps.org/doi/10.1103/PhysRev.57.1169",
5749 doi = "10.1103/PhysRev.57.1169",
5751 title = "A New Method for Calculating Wave Functions in
5754 publisher = "American Physical Society",
5755 pages = "1169--1177",
5756 notes = "orthogonalized plane wave method, opw",
5761 journal = "Phys. Rev.",
5762 author = "J. C. Slater",
5764 URL = "http://link.aps.org/doi/10.1103/PhysRev.92.603",
5765 doi = "10.1103/PhysRev.92.603",
5767 title = "An Augmented Plane Wave Method for the Periodic
5770 publisher = "American Physical Society",
5772 notes = "augmented plane wave method",
5775 @Article{phillips59,
5777 journal = "Phys. Rev.",
5778 author = "James C. Phillips and Leonard Kleinman",
5780 URL = "http://link.aps.org/doi/10.1103/PhysRev.116.287",
5781 doi = "10.1103/PhysRev.116.287",
5783 title = "New Method for Calculating Wave Functions in Crystals
5786 publisher = "American Physical Society",
5788 notes = "pseudo potential",
5793 journal = "Phys. Rev.",
5794 author = "B. J. Austin and V. Heine and L. J. Sham",
5796 URL = "http://link.aps.org/doi/10.1103/PhysRev.127.276",
5797 doi = "10.1103/PhysRev.127.276",
5799 title = "General Theory of Pseudopotentials",
5801 publisher = "American Physical Society",
5803 notes = "most general form of pseudo potential",
5808 journal = "Phys. Rev. B",
5809 author = "Xavier Gonze and Roland Stumpf and Matthias
5812 URL = "http://link.aps.org/doi/10.1103/PhysRevB.44.8503",
5813 doi = "10.1103/PhysRevB.44.8503",
5815 title = "Analysis of separable potentials",
5817 publisher = "American Physical Society",
5818 pages = "8503--8513",
5822 title = "{ABINIT}: First-principles approach to material and
5823 nanosystem properties",
5824 journal = "Computer Physics Communications",
5827 pages = "2582--2615",
5830 doi = "http://dx.doi.org/10.1016/j.cpc.2009.07.007",
5831 URL = "http://www.sciencedirect.com/science/article/pii/S0010465509002276",
5832 author = "X. Gonze and B. Amadon and P.-M. Anglade and J.-M.
5833 Beuken and F. Bottin and P. Boulanger and F. Bruneval
5834 and D. Caliste and R. Caracas and M. Côté and T.
5835 Deutsch and L. Genovese and Ph. Ghosez and M.
5836 Giantomassi and S. Goedecker and D. R. Hamann and P.
5837 Hermet and F. Jollet and G. Jomard and S. Leroux and M.
5838 Mancini and S. Mazevet and M. J. T. Oliveira and G.
5839 Onida and Y. Pouillon and T. Rangel and G.-M. Rignanese
5840 and D. Sangalli and R. Shaltaf and M. Torrent and M. J.
5841 Verstraete and G. Zerah and J. W. Zwanziger",
5846 journal = "Phys. Rev.",
5847 author = "Gregory H. Wannier",
5849 URL = "http://link.aps.org/doi/10.1103/PhysRev.52.191",
5850 doi = "10.1103/PhysRev.52.191",
5852 title = "The Structure of Electronic Excitation Levels in
5853 Insulating Crystals",
5855 publisher = "American Physical Society",
5861 journal = "Phys. Rev. B",
5862 author = "Nicola Marzari and David Vanderbilt",
5864 URL = "http://link.aps.org/doi/10.1103/PhysRevB.56.12847",
5865 doi = "10.1103/PhysRevB.56.12847",
5867 title = "Maximally localized generalized Wannier functions for
5868 composite energy bands",
5870 publisher = "American Physical Society",
5871 pages = "12847--12865",
5872 notes = "maximal general localized wannier orbitals",
5876 author = "P. A. M. Dirac",
5877 title = "The Quantum Theory of the Electron",
5882 doi = "10.1098/rspa.1928.0023",
5883 URL = "http://rspa.royalsocietypublishing.org/content/117/778/610.short",
5884 eprint = "http://rspa.royalsocietypublishing.org/content/117/778/610.full.pdf+html",
5885 journal = "Proceedings of the Royal Society of London. Series A",
5886 notes = "spin orbit origin, relativistic quantum theory",
5889 @Article{kleinman80,
5890 title = "Relativistic norm-conserving pseudopotential",
5891 author = "Leonard Kleinman",
5892 journal = "Phys. Rev. B",
5895 pages = "2630--2631",
5898 doi = "10.1103/PhysRevB.21.2630",
5899 URL = "http://link.aps.org/doi/10.1103/PhysRevB.21.2630",
5900 publisher = "American Physical Society",
5901 notes = "first relativistic pseudopotential",
5904 @Article{bachelet82,
5905 title = "Relativistic norm-conserving pseudopotentials",
5906 author = "Giovanni B. Bachelet and M. Schl{\"u}ter",
5907 journal = "Phys. Rev. B",
5910 pages = "2103--2108",
5913 doi = "10.1103/PhysRevB.25.2103",
5914 URL = "http://link.aps.org/doi/10.1103/PhysRevB.25.2103",
5915 publisher = "American Physical Society",
5918 @Article{hybertsen86,
5919 title = "Spin-orbit splitting in semiconductors and insulators
5920 from the \textit{ab initio} pseudopotential",
5921 author = "Mark S. Hybertsen and Steven G. Louie",
5922 journal = "Phys. Rev. B",
5925 pages = "2920--2922",
5928 doi = "10.1103/PhysRevB.34.2920",
5929 URL = "http://link.aps.org/doi/10.1103/PhysRevB.34.2920",
5930 publisher = "American Physical Society",
5931 notes = "spin orbit pseudopotential formulation",
5935 title = "Relativistic band structure and spin-orbit splitting
5936 of zinc-blende-type semiconductors",
5937 author = "M. Cardona and N. E. Christensen and G. Fasol",
5938 journal = "Phys. Rev. B",
5941 pages = "1806--1827",
5944 doi = "10.1103/PhysRevB.38.1806",
5945 URL = "http://link.aps.org/doi/10.1103/PhysRevB.38.1806",
5946 publisher = "American Physical Society",
5947 notes = "fully relativistic band structures of zinc blende
5951 @Article{hemstreet93,
5952 title = "First-principles calculations of spin-orbit splittings
5953 in solids using nonlocal separable pseudopotentials",
5954 author = "L. A. Hemstreet and C. Y. Fong and J. S. Nelson",
5955 journal = "Phys. Rev. B",
5958 pages = "4238--4243",
5961 doi = "10.1103/PhysRevB.47.4238",
5962 URL = "http://link.aps.org/doi/10.1103/PhysRevB.47.4238",
5963 publisher = "American Physical Society",
5967 title = "Real-space pseudopotential method for spin-orbit
5968 coupling within density functional theory",
5969 author = "Doron Naveh and Leeor Kronik and Murilo L. Tiago and
5970 James R. Chelikowsky",
5971 journal = "Phys. Rev. B",
5978 doi = "10.1103/PhysRevB.76.153407",
5979 URL = "http://link.aps.org/doi/10.1103/PhysRevB.76.153407",
5980 publisher = "American Physical Society",
5981 notes = "real space spin orbit pseudopotential implementation",
5984 @Article{verstraete08,
5985 title = "Density functional perturbation theory with spin-orbit
5986 coupling: Phonon band structure of lead",
5987 author = "Matthieu J. Verstraete and Marc Torrent and
5988 Fran\mbox{\c{c}}ois Jollet and Gilles Z\'erah and
5990 journal = "Phys. Rev. B",
5997 doi = "10.1103/PhysRevB.78.045119",
5998 URL = "http://link.aps.org/doi/10.1103/PhysRevB.78.045119",
5999 publisher = "American Physical Society",
6002 @Article{cuadrado12,
6003 author = "R. Cuadrado and J. I. Cerdá",
6004 title = "Fully relativistic pseudopotential formalism under an
6005 atomic orbital basis: spin-orbit splittings and
6006 magnetic anisotropies",
6007 journal = "Journal of Physics: Condensed Matter",
6011 URL = "http://stacks.iop.org/0953-8984/24/i=8/a=086005",
6016 title = "Parallel Empirical Pseudopotential Electronic
6017 Structure Calculations for Million Atom Systems",
6018 journal = "Journal of Computational Physics",
6025 doi = "http://dx.doi.org/10.1006/jcph.2000.6440",
6026 URL = "http://www.sciencedirect.com/science/article/pii/S0021999100964404",
6027 author = "A. Canning and L. W. Wang and A. Williamson and A.
6031 @Article{oliveira08,
6032 title = "Generating relativistic pseudo-potentials with
6033 explicit incorporation of semi-core states using {APE},
6034 the Atomic Pseudo-potentials Engine",
6035 journal = "Computer Physics Communications",
6042 doi = "http://dx.doi.org/10.1016/j.cpc.2007.11.003",
6043 URL = "http://www.sciencedirect.com/science/article/pii/S0010465507004651",
6044 author = "Micael J. T. Oliveira and Fernando Nogueira",
6045 keywords = "Pseudo-potential",
6046 keywords = "Electronic structure",
6047 keywords = "Density functional",
6050 @Article{fornberg88,
6051 author = "Bengt Fornberg",
6052 title = "Generation of finite difference formulas on
6053 arbitrarily spaced grids",
6054 journal = "Math. Comp.",
6059 doi = "http://dx.doi.org/10.1090/S0025-5718-1988-0935077-",
6060 URL = "http://dx.doi.org/10.1090/S0025-5718-1988-0935077-",
6063 @Article{fornberg94,
6064 author = "Bengt Fornberg and David M. Sloan",
6065 title = "A review of pseudospectral methods for solving partial
6066 differential equations",
6067 journal = "Acta Numerica",
6072 doi = "10.1017/S0962492900002440",
6073 URL = "http://dx.doi.org/10.1017/S0962492900002440",
6076 @Article{urbaszek03,
6077 title = "Fine Structure of Highly Charged Excitons in
6078 Semiconductor Quantum Dots",
6079 author = "B. Urbaszek and R. J. Warburton and K. Karrai and B.
6080 D. Gerardot and P. M. Petroff and J. M. Garcia",
6081 journal = "Phys. Rev. Lett.",
6088 doi = "10.1103/PhysRevLett.90.247403",
6089 URL = "http://link.aps.org/doi/10.1103/PhysRevLett.90.247403",
6090 publisher = "American Physical Society",
6094 title = "Multiexciton Spectroscopy of a Single Self-Assembled
6096 author = "E. Dekel and D. Gershoni and E. Ehrenfreund and D.
6097 Spektor and J. M. Garcia and P. M. Petroff",
6098 journal = "Phys. Rev. Lett.",
6101 pages = "4991--4994",
6104 doi = "10.1103/PhysRevLett.80.4991",
6105 URL = "http://link.aps.org/doi/10.1103/PhysRevLett.80.4991",
6106 publisher = "American Physical Society",
6110 title = "Fine structure of neutral and charged excitons in
6111 self-assembled In(Ga)As/(Al)GaAs quantum dots",
6112 author = "M. Bayer and G. Ortner and O. Stern and A. Kuther and
6113 A. A. Gorbunov and A. Forchel and P. Hawrylak and S.
6114 Fafard and K. Hinzer and T. L. Reinecke and S. N. Walck
6115 and J. P. Reithmaier and F. Klopf and F. Sch{\"a}fer",
6116 journal = "Phys. Rev. B",
6123 doi = "10.1103/PhysRevB.65.195315",
6124 URL = "http://link.aps.org/doi/10.1103/PhysRevB.65.195315",
6125 publisher = "American Physical Society",
6129 title = "Electron and Hole $\mathit{g}$ Factors and Exchange
6130 Interaction from Studies of the Exciton Fine Structure
6132 ${\mathrm{In}}_{0.60}{\mathrm{Ga}}_{0.40}\mathrm{As}$
6134 author = "M. Bayer and A. Kuther and A. Forchel and A. Gorbunov
6135 and V. B. Timofeev and F. Sch{\"a}fer and J. P.
6136 Reithmaier and T. L. Reinecke and S. N. Walck",
6137 journal = "Phys. Rev. Lett.",
6140 pages = "1748--1751",
6143 doi = "10.1103/PhysRevLett.82.1748",
6144 URL = "http://link.aps.org/doi/10.1103/PhysRevLett.82.1748",
6145 publisher = "American Physical Society",
6149 title = "Quantum computation with quantum dots",
6150 author = "Daniel Loss and David P. DiVincenzo",
6151 journal = "Phys. Rev. A",
6157 doi = "10.1103/PhysRevA.57.120",
6158 URL = "http://link.aps.org/doi/10.1103/PhysRevA.57.120",
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6690 title = "Topological Crystalline Insulators",
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