2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 author = "Henri Moissan",
187 title = "Nouvelles recherches sur la météorité de Cañon
189 journal = "Comptes rendus de l'Académie des Sciences",
196 author = "Y. S. Park",
197 title = "Si{C} Materials and Devices",
198 publisher = "Academic Press",
199 address = "San Diego",
204 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
205 Calvin H. Carter Jr. and D. Asbury",
206 title = "Si{C} Seeded Boule Growth",
207 journal = "Materials Science Forum",
211 notes = "modified lely process, micropipes",
215 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
216 Thermodynamical Properties of Lennard-Jones Molecules",
217 author = "Loup Verlet",
218 journal = "Phys. Rev.",
224 doi = "10.1103/PhysRev.159.98",
225 publisher = "American Physical Society",
226 notes = "velocity verlet integration algorithm equation of
230 @Article{berendsen84,
231 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
232 Gunsteren and A. DiNola and J. R. Haak",
234 title = "Molecular dynamics with coupling to an external bath",
237 journal = "J. Chem. Phys.",
240 pages = "3684--3690",
241 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
242 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
243 URL = "http://link.aip.org/link/?JCP/81/3684/1",
244 doi = "10.1063/1.448118",
245 notes = "berendsen thermostat barostat",
249 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
251 title = "Molecular dynamics determination of defect energetics
252 in beta -Si{C} using three representative empirical
254 journal = "Modell. Simul. Mater. Sci. Eng.",
258 URL = "http://stacks.iop.org/0965-0393/3/615",
259 notes = "comparison of tersoff, pearson and eam for defect
260 energetics in sic; (m)eam parameters for sic",
265 title = "Relationship between the embedded-atom method and
267 author = "Donald W. Brenner",
268 journal = "Phys. Rev. Lett.",
275 doi = "10.1103/PhysRevLett.63.1022",
276 publisher = "American Physical Society",
277 notes = "relation of tersoff and eam potential",
281 title = "Molecular-dynamics study of self-interstitials in
283 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
284 journal = "Phys. Rev. B",
287 pages = "9552--9558",
291 doi = "10.1103/PhysRevB.35.9552",
292 publisher = "American Physical Society",
293 notes = "selft-interstitials in silicon, stillinger-weber,
294 calculation of defect formation energy, defect
299 title = "Extended interstitials in silicon and germanium",
300 author = "H. R. Schober",
301 journal = "Phys. Rev. B",
304 pages = "13013--13015",
308 doi = "10.1103/PhysRevB.39.13013",
309 publisher = "American Physical Society",
310 notes = "stillinger-weber silicon 110 stable and metastable
311 dumbbell configuration",
315 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
316 Defect accumulation, topological features, and
318 author = "F. Gao and W. J. Weber",
319 journal = "Phys. Rev. B",
326 doi = "10.1103/PhysRevB.66.024106",
327 publisher = "American Physical Society",
328 notes = "sic intro, si cascade in 3c-sic, amorphization,
329 tersoff modified, pair correlation of amorphous sic, md
333 @Article{devanathan98,
334 title = "Computer simulation of a 10 ke{V} Si displacement
336 journal = "Nucl. Instrum. Methods Phys. Res. B",
342 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
343 author = "R. Devanathan and W. J. Weber and T. Diaz de la
345 notes = "modified tersoff short range potential, ab initio
349 @Article{devanathan98_2,
350 title = "Displacement threshold energies in [beta]-Si{C}",
351 journal = "J. Nucl. Mater.",
357 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
358 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
360 notes = "modified tersoff, ab initio, combined ab initio
364 @Article{kitabatake00,
365 title = "Si{C}/Si heteroepitaxial growth",
366 author = "M. Kitabatake",
367 journal = "Thin Solid Films",
372 notes = "md simulation, sic si heteroepitaxy, mbe",
376 title = "Intrinsic point defects in crystalline silicon:
377 Tight-binding molecular dynamics studies of
378 self-diffusion, interstitial-vacancy recombination, and
380 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
382 journal = "Phys. Rev. B",
385 pages = "14279--14289",
389 doi = "10.1103/PhysRevB.55.14279",
390 publisher = "American Physical Society",
391 notes = "si self interstitial, diffusion, tbmd",
395 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
398 title = "A kinetic Monte--Carlo study of the effective
399 diffusivity of the silicon self-interstitial in the
400 presence of carbon and boron",
403 journal = "J. Appl. Phys.",
406 pages = "1963--1967",
407 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
408 CARBON ADDITIONS; BORON ADDITIONS; elemental
409 semiconductors; self-diffusion",
410 URL = "http://link.aip.org/link/?JAP/84/1963/1",
411 doi = "10.1063/1.368328",
412 notes = "kinetic monte carlo of si self interstitial
417 title = "Barrier to Migration of the Silicon
419 author = "Y. Bar-Yam and J. D. Joannopoulos",
420 journal = "Phys. Rev. Lett.",
423 pages = "1129--1132",
427 doi = "10.1103/PhysRevLett.52.1129",
428 publisher = "American Physical Society",
429 notes = "si self-interstitial migration barrier",
432 @Article{bar-yam84_2,
433 title = "Electronic structure and total-energy migration
434 barriers of silicon self-interstitials",
435 author = "Y. Bar-Yam and J. D. Joannopoulos",
436 journal = "Phys. Rev. B",
439 pages = "1844--1852",
443 doi = "10.1103/PhysRevB.30.1844",
444 publisher = "American Physical Society",
448 title = "First-principles calculations of self-diffusion
449 constants in silicon",
450 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
451 and D. B. Laks and W. Andreoni and S. T. Pantelides",
452 journal = "Phys. Rev. Lett.",
455 pages = "2435--2438",
459 doi = "10.1103/PhysRevLett.70.2435",
460 publisher = "American Physical Society",
461 notes = "si self int diffusion by ab initio md, formation
462 entropy calculations",
466 title = "Tight-binding theory of native point defects in
468 author = "L. Colombo",
469 journal = "Annu. Rev. Mater. Res.",
474 doi = "10.1146/annurev.matsci.32.111601.103036",
475 publisher = "Annual Reviews",
476 notes = "si self interstitial, tbmd, virial stress",
479 @Article{al-mushadani03,
480 title = "Free-energy calculations of intrinsic point defects in
482 author = "O. K. Al-Mushadani and R. J. Needs",
483 journal = "Phys. Rev. B",
490 doi = "10.1103/PhysRevB.68.235205",
491 publisher = "American Physical Society",
492 notes = "formation energies of intrinisc point defects in
493 silicon, si self interstitials, free energy",
496 @Article{goedecker02,
497 title = "A Fourfold Coordinated Point Defect in Silicon",
498 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
499 journal = "Phys. Rev. Lett.",
506 doi = "10.1103/PhysRevLett.88.235501",
507 publisher = "American Physical Society",
508 notes = "first time ffcd, fourfold coordinated point defect in
513 title = "Ab initio molecular dynamics simulation of
514 self-interstitial diffusion in silicon",
515 author = "Beat Sahli and Wolfgang Fichtner",
516 journal = "Phys. Rev. B",
523 doi = "10.1103/PhysRevB.72.245210",
524 publisher = "American Physical Society",
525 notes = "si self int, diffusion, barrier height, voronoi
530 title = "Ab initio calculations of the interaction between
531 native point defects in silicon",
532 journal = "Mater. Sci. Eng., B",
537 note = "EMRS 2005, Symposium D - Materials Science and Device
538 Issues for Future Technologies",
540 doi = "DOI: 10.1016/j.mseb.2005.08.072",
541 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
542 author = "G. Hobler and G. Kresse",
543 notes = "vasp intrinsic si defect interaction study, capture
548 title = "Ab initio study of self-diffusion in silicon over a
549 wide temperature range: Point defect states and
550 migration mechanisms",
551 author = "Shangyi Ma and Shaoqing Wang",
552 journal = "Phys. Rev. B",
559 doi = "10.1103/PhysRevB.81.193203",
560 publisher = "American Physical Society",
561 notes = "si self interstitial diffusion + refs",
565 title = "Atomistic simulations on the thermal stability of the
566 antisite pair in 3{C}- and 4{H}-Si{C}",
567 author = "M. Posselt and F. Gao and W. J. Weber",
568 journal = "Phys. Rev. B",
575 doi = "10.1103/PhysRevB.73.125206",
576 publisher = "American Physical Society",
580 title = "Correlation between self-diffusion in Si and the
581 migration mechanisms of vacancies and
582 self-interstitials: An atomistic study",
583 author = "M. Posselt and F. Gao and H. Bracht",
584 journal = "Phys. Rev. B",
591 doi = "10.1103/PhysRevB.78.035208",
592 publisher = "American Physical Society",
593 notes = "si self-interstitial and vacancy diffusion, stillinger
598 title = "Ab initio and empirical-potential studies of defect
599 properties in $3{C}-Si{C}$",
600 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
602 journal = "Phys. Rev. B",
609 doi = "10.1103/PhysRevB.64.245208",
610 publisher = "American Physical Society",
611 notes = "defects in 3c-sic",
615 title = "Empirical potential approach for defect properties in
617 journal = "Nucl. Instrum. Methods Phys. Res. B",
624 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
625 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
626 author = "Fei Gao and William J. Weber",
627 keywords = "Empirical potential",
628 keywords = "Defect properties",
629 keywords = "Silicon carbide",
630 keywords = "Computer simulation",
631 notes = "sic potential, brenner type, like erhart/albe",
635 title = "Atomistic study of intrinsic defect migration in
637 author = "Fei Gao and William J. Weber and M. Posselt and V.
639 journal = "Phys. Rev. B",
646 doi = "10.1103/PhysRevB.69.245205",
647 publisher = "American Physical Society",
648 notes = "defect migration in sic",
652 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
655 title = "Ab Initio atomic simulations of antisite pair recovery
656 in cubic silicon carbide",
659 journal = "Appl. Phys. Lett.",
665 keywords = "ab initio calculations; silicon compounds; antisite
666 defects; wide band gap semiconductors; molecular
667 dynamics method; density functional theory;
668 electron-hole recombination; photoluminescence;
669 impurities; diffusion",
670 URL = "http://link.aip.org/link/?APL/90/221915/1",
671 doi = "10.1063/1.2743751",
674 @Article{mattoni2002,
675 title = "Self-interstitial trapping by carbon complexes in
676 crystalline silicon",
677 author = "A. Mattoni and F. Bernardini and L. Colombo",
678 journal = "Phys. Rev. B",
685 doi = "10.1103/PhysRevB.66.195214",
686 publisher = "American Physical Society",
687 notes = "c in c-si, diffusion, interstitial configuration +
688 links, interaction of carbon and silicon interstitials,
689 tersoff suitability",
693 title = "Calculations of Silicon Self-Interstitial Defects",
694 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
696 journal = "Phys. Rev. Lett.",
699 pages = "2351--2354",
703 doi = "10.1103/PhysRevLett.83.2351",
704 publisher = "American Physical Society",
705 notes = "nice images of the defects, si defect overview +
710 title = "Identification of the migration path of interstitial
712 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
713 journal = "Phys. Rev. B",
716 pages = "7439--7442",
720 doi = "10.1103/PhysRevB.50.7439",
721 publisher = "American Physical Society",
722 notes = "carbon interstitial migration path shown, 001 c-si
727 title = "Theory of carbon-carbon pairs in silicon",
728 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
729 journal = "Phys. Rev. B",
732 pages = "9845--9850",
736 doi = "10.1103/PhysRevB.58.9845",
737 publisher = "American Physical Society",
738 notes = "c_i c_s pair configuration, theoretical results",
742 title = "Bistable interstitial-carbon--substitutional-carbon
744 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
746 journal = "Phys. Rev. B",
749 pages = "5765--5783",
753 doi = "10.1103/PhysRevB.42.5765",
754 publisher = "American Physical Society",
755 notes = "c_i c_s pair configuration, experimental results",
759 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
760 Shifeng Lu and Xiang-Yang Liu",
762 title = "Ab initio modeling and experimental study of {C}--{B}
766 journal = "Appl. Phys. Lett.",
770 keywords = "silicon; boron; carbon; elemental semiconductors;
771 impurity-defect interactions; ab initio calculations;
772 secondary ion mass spectra; diffusion; interstitials",
773 URL = "http://link.aip.org/link/?APL/80/52/1",
774 doi = "10.1063/1.1430505",
775 notes = "c-c 100 split, lower as a and b states of capaz",
779 title = "Ab initio investigation of carbon-related defects in
781 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
783 journal = "Phys. Rev. B",
786 pages = "12554--12557",
790 doi = "10.1103/PhysRevB.47.12554",
791 publisher = "American Physical Society",
792 notes = "c interstitials in crystalline silicon",
796 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
798 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
799 Sokrates T. Pantelides",
800 journal = "Phys. Rev. Lett.",
803 pages = "1814--1817",
807 doi = "10.1103/PhysRevLett.52.1814",
808 publisher = "American Physical Society",
809 notes = "microscopic theory diffusion silicon dft migration
814 title = "Unified Approach for Molecular Dynamics and
815 Density-Functional Theory",
816 author = "R. Car and M. Parrinello",
817 journal = "Phys. Rev. Lett.",
820 pages = "2471--2474",
824 doi = "10.1103/PhysRevLett.55.2471",
825 publisher = "American Physical Society",
826 notes = "car parrinello method, dft and md",
830 title = "Short-range order, bulk moduli, and physical trends in
831 c-$Si1-x$$Cx$ alloys",
832 author = "P. C. Kelires",
833 journal = "Phys. Rev. B",
836 pages = "8784--8787",
840 doi = "10.1103/PhysRevB.55.8784",
841 publisher = "American Physical Society",
842 notes = "c strained si, montecarlo md, bulk moduli, next
847 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
848 Application to the $Si1-x-yGexCy$ System",
849 author = "P. C. Kelires",
850 journal = "Phys. Rev. Lett.",
853 pages = "1114--1117",
857 doi = "10.1103/PhysRevLett.75.1114",
858 publisher = "American Physical Society",
859 notes = "mc md, strain compensation in si ge by c insertion",
863 title = "Low temperature electron irradiation of silicon
865 journal = "Solid State Communications",
872 doi = "DOI: 10.1016/0038-1098(70)90074-8",
873 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
874 author = "A. R. Bean and R. C. Newman",
878 title = "{EPR} Observation of the Isolated Interstitial Carbon
880 author = "G. D. Watkins and K. L. Brower",
881 journal = "Phys. Rev. Lett.",
884 pages = "1329--1332",
888 doi = "10.1103/PhysRevLett.36.1329",
889 publisher = "American Physical Society",
890 notes = "epr observations of 100 interstitial carbon atom in
895 title = "{EPR} identification of the single-acceptor state of
896 interstitial carbon in silicon",
897 author = "L. W. Song and G. D. Watkins",
898 journal = "Phys. Rev. B",
901 pages = "5759--5764",
905 doi = "10.1103/PhysRevB.42.5759",
906 publisher = "American Physical Society",
907 notes = "carbon diffusion in silicon",
911 author = "A K Tipping and R C Newman",
912 title = "The diffusion coefficient of interstitial carbon in
914 journal = "Semicond. Sci. Technol.",
918 URL = "http://stacks.iop.org/0268-1242/2/315",
920 notes = "diffusion coefficient of carbon interstitials in
925 title = "Carbon incorporation into Si at high concentrations by
926 ion implantation and solid phase epitaxy",
927 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
928 Picraux and J. K. Watanabe and J. W. Mayer",
929 journal = "J. Appl. Phys.",
934 doi = "10.1063/1.360806",
935 notes = "strained silicon, carbon supersaturation",
938 @Article{laveant2002,
939 title = "Epitaxy of carbon-rich silicon with {MBE}",
940 journal = "Mater. Sci. Eng., B",
946 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
947 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
948 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
950 notes = "low c in si, tensile stress to compensate compressive
951 stress, avoid sic precipitation",
955 author = "P. Werner and S. Eichler and G. Mariani and R.
956 K{\"{o}}gler and W. Skorupa",
957 title = "Investigation of {C}[sub x]Si defects in {C} implanted
958 silicon by transmission electron microscopy",
961 journal = "Appl. Phys. Lett.",
965 keywords = "silicon; ion implantation; carbon; crystal defects;
966 transmission electron microscopy; annealing; positron
967 annihilation; secondary ion mass spectroscopy; buried
968 layers; precipitation",
969 URL = "http://link.aip.org/link/?APL/70/252/1",
970 doi = "10.1063/1.118381",
971 notes = "si-c complexes, agglomerate, sic in si matrix, sic
975 @InProceedings{werner96,
976 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
978 booktitle = "Ion Implantation Technology. Proceedings of the 11th
979 International Conference on",
980 title = "{TEM} investigation of {C}-Si defects in carbon
987 doi = "10.1109/IIT.1996.586497",
989 notes = "c-si agglomerates dumbbells",
993 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
996 title = "Carbon diffusion in silicon",
999 journal = "Appl. Phys. Lett.",
1002 pages = "2465--2467",
1003 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1004 secondary ion mass spectra; semiconductor epitaxial
1005 layers; annealing; impurity-defect interactions;
1006 impurity distribution",
1007 URL = "http://link.aip.org/link/?APL/73/2465/1",
1008 doi = "10.1063/1.122483",
1009 notes = "c diffusion in si, kick out mechnism",
1013 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1014 Picraux and J. K. Watanabe and J. W. Mayer",
1016 title = "Precipitation and relaxation in strained Si[sub 1 -
1017 y]{C}[sub y]/Si heterostructures",
1020 journal = "J. Appl. Phys.",
1023 pages = "3656--3668",
1024 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1025 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1026 doi = "10.1063/1.357429",
1027 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1028 precipitation by substitutional carbon, coherent prec,
1029 coherent to incoherent transition strain vs interface
1034 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1037 title = "Investigation of the high temperature behavior of
1038 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1041 journal = "J. Appl. Phys.",
1044 pages = "1934--1937",
1045 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1046 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1047 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1048 TEMPERATURE RANGE 04001000 K",
1049 URL = "http://link.aip.org/link/?JAP/77/1934/1",
1050 doi = "10.1063/1.358826",
1054 title = "Prospects for device implementation of wide band gap
1056 author = "J. H. Edgar",
1057 journal = "J. Mater. Res.",
1062 doi = "10.1557/JMR.1992.0235",
1063 notes = "properties wide band gap semiconductor, sic
1067 @Article{zirkelbach2007,
1068 title = "Monte Carlo simulation study of a selforganisation
1069 process leading to ordered precipitate structures",
1070 author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
1072 journal = "Nucl. Instr. and Meth. B",
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1128 note = "EMRS 2008 Spring Conference Symposium K: Advanced
1129 Silicon Materials Research for Electronic and
1130 Photovoltaic Applications",
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1148 K. N. Lindner and W. G. Schmidt and E. Rauls",
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1185 nanocrystals for the ion beam synthesis of buried Si{C}
1187 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1231 title = "High-dose carbon implantations into silicon:
1232 fundamental studies for new technological tricks",
1233 author = "J. K. N. Lindner",
1234 journal = "Appl. Phys. A",
1238 doi = "10.1007/s00339-002-2062-8",
1239 notes = "ibs, burried sic layers",
1243 title = "On the balance between ion beam induced nanoparticle
1244 formation and displacive precipitate resolution in the
1246 journal = "Mater. Sci. Eng., C",
1251 note = "Current Trends in Nanoscience - from Materials to
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1262 title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
1263 application in buffer layer for Ga{N} epitaxial
1265 journal = "Applied Surface Science",
1270 note = "APHYS'03 Special Issue",
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1274 author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
1275 and S. Nishio and K. Yasuda and Y. Ishigami",
1276 notes = "gan on 3c-sic, focus on ibs of 3c-sic",
1279 @Article{yamamoto04,
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1281 on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
1282 implantation into Si(1 1 1) substrate",
1283 journal = "Journal of Crystal Growth",
1288 note = "Proceedings of the 11th Biennial (US) Workshop on
1289 Organometallic Vapor Phase Epitaxy (OMVPE)",
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1293 author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
1294 Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
1295 notes = "gan on 3c-sic",
1299 title = "Substrates for gallium nitride epitaxy",
1300 journal = "Materials Science and Engineering: R: Reports",
1307 doi = "DOI: 10.1016/S0927-796X(02)00008-6",
1308 URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
1309 author = "L. Liu and J. H. Edgar",
1310 notes = "gan substrates",
1313 @Article{takeuchi91,
1314 title = "Growth of single crystalline Ga{N} film on Si
1315 substrate using 3{C}-Si{C} as an intermediate layer",
1316 journal = "Journal of Crystal Growth",
1323 doi = "DOI: 10.1016/0022-0248(91)90817-O",
1324 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
1325 author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
1326 Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
1327 notes = "gan on 3c-sic (first time?)",
1331 author = "B. J. Alder and T. E. Wainwright",
1332 title = "Phase Transition for a Hard Sphere System",
1335 journal = "J. Chem. Phys.",
1338 pages = "1208--1209",
1339 URL = "http://link.aip.org/link/?JCP/27/1208/1",
1340 doi = "10.1063/1.1743957",
1344 author = "B. J. Alder and T. E. Wainwright",
1345 title = "Studies in Molecular Dynamics. {I}. General Method",
1348 journal = "J. Chem. Phys.",
1352 URL = "http://link.aip.org/link/?JCP/31/459/1",
1353 doi = "10.1063/1.1730376",
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1359 author = "J. Tersoff",
1360 journal = "Phys. Rev. Lett.",
1367 doi = "10.1103/PhysRevLett.56.632",
1368 publisher = "American Physical Society",
1371 @Article{tersoff_si2,
1372 title = "New empirical approach for the structure and energy of
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1382 doi = "10.1103/PhysRevB.37.6991",
1383 publisher = "American Physical Society",
1386 @Article{tersoff_si3,
1387 title = "Empirical interatomic potential for silicon with
1388 improved elastic properties",
1389 author = "J. Tersoff",
1390 journal = "Phys. Rev. B",
1393 pages = "9902--9905",
1397 doi = "10.1103/PhysRevB.38.9902",
1398 publisher = "American Physical Society",
1402 title = "Empirical Interatomic Potential for Carbon, with
1403 Applications to Amorphous Carbon",
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1405 journal = "Phys. Rev. Lett.",
1408 pages = "2879--2882",
1412 doi = "10.1103/PhysRevLett.61.2879",
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1417 title = "Modeling solid-state chemistry: Interatomic potentials
1418 for multicomponent systems",
1419 author = "J. Tersoff",
1420 journal = "Phys. Rev. B",
1423 pages = "5566--5568",
1427 doi = "10.1103/PhysRevB.39.5566",
1428 publisher = "American Physical Society",
1432 title = "Carbon defects and defect reactions in silicon",
1433 author = "J. Tersoff",
1434 journal = "Phys. Rev. Lett.",
1437 pages = "1757--1760",
1441 doi = "10.1103/PhysRevLett.64.1757",
1442 publisher = "American Physical Society",
1446 title = "Point defects and dopant diffusion in silicon",
1447 author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
1448 journal = "Rev. Mod. Phys.",
1455 doi = "10.1103/RevModPhys.61.289",
1456 publisher = "American Physical Society",
1460 title = "Silicon carbide: synthesis and processing",
1461 journal = "Nucl. Instrum. Methods Phys. Res. B",
1466 note = "Radiation Effects in Insulators",
1468 doi = "DOI: 10.1016/0168-583X(96)00065-1",
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1470 author = "W. Wesch",
1474 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1475 Lin and B. Sverdlov and M. Burns",
1477 title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
1478 ZnSe-based semiconductor device technologies",
1481 journal = "J. Appl. Phys.",
1484 pages = "1363--1398",
1485 keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
1486 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
1487 LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
1489 URL = "http://link.aip.org/link/?JAP/76/1363/1",
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1491 notes = "sic intro, properties",
1495 author = "P. G. Neudeck",
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1497 {ELECTRONICS} {TECHNOLOGY}",
1498 journal = "Journal of Electronic Materials",
1507 author = "Noch Unbekannt",
1508 title = "How to find references",
1509 journal = "Journal of Applied References",
1516 title = "Atomistic simulation of thermomechanical properties of
1518 author = "Meijie Tang and Sidney Yip",
1519 journal = "Phys. Rev. B",
1522 pages = "15150--15159",
1525 doi = "10.1103/PhysRevB.52.15150",
1526 notes = "modified tersoff, scale cutoff with volume, promising
1527 tersoff reparametrization",
1528 publisher = "American Physical Society",
1532 title = "Silicon carbide as a new {MEMS} technology",
1533 journal = "Sensors and Actuators A: Physical",
1539 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1540 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
1541 author = "Pasqualina M. Sarro",
1543 keywords = "Silicon carbide",
1544 keywords = "Micromachining",
1545 keywords = "Mechanical stress",
1549 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1550 semiconductor for high-temperature applications: {A}
1552 journal = "Solid-State Electronics",
1555 pages = "1409--1422",
1558 doi = "DOI: 10.1016/0038-1101(96)00045-7",
1559 URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
1560 author = "J. B. Casady and R. W. Johnson",
1561 notes = "sic intro",
1564 @Article{giancarli98,
1565 title = "Design requirements for Si{C}/Si{C} composites
1566 structural material in fusion power reactor blankets",
1567 journal = "Fusion Engineering and Design",
1573 doi = "DOI: 10.1016/S0920-3796(97)00200-7",
1574 URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
1575 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1576 Marois and N. B. Morley and J. F. Salavy",
1580 title = "Electrical and optical characterization of Si{C}",
1581 journal = "Physica B: Condensed Matter",
1587 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1588 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1589 author = "G. Pensl and W. J. Choyke",
1593 title = "Investigation of growth processes of ingots of silicon
1594 carbide single crystals",
1595 journal = "J. Cryst. Growth",
1600 notes = "modified lely process",
1602 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1603 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1604 author = "Yu. M. Tairov and V. F. Tsvetkov",
1608 title = "General principles of growing large-size single
1609 crystals of various silicon carbide polytypes",
1610 journal = "Journal of Crystal Growth",
1617 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1618 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1619 author = "Yu.M. Tairov and V. F. Tsvetkov",
1623 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1626 title = "Production of large-area single-crystal wafers of
1627 cubic Si{C} for semiconductor devices",
1630 journal = "Appl. Phys. Lett.",
1634 keywords = "silicon carbides; layers; chemical vapor deposition;
1636 URL = "http://link.aip.org/link/?APL/42/460/1",
1637 doi = "10.1063/1.93970",
1638 notes = "cvd of 3c-sic on si, sic buffer layer",
1642 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
1643 and Hiroyuki Matsunami",
1645 title = "Epitaxial growth and electric characteristics of cubic
1649 journal = "J. Appl. Phys.",
1652 pages = "4889--4893",
1653 URL = "http://link.aip.org/link/?JAP/61/4889/1",
1654 doi = "10.1063/1.338355",
1655 notes = "cvd of 3c-sic on si, sic buffer layer, first time
1660 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1662 title = "Growth and Characterization of Cubic Si{C}
1663 Single-Crystal Films on Si",
1666 journal = "Journal of The Electrochemical Society",
1669 pages = "1558--1565",
1670 keywords = "semiconductor materials; silicon compounds; carbon
1671 compounds; crystal morphology; electron mobility",
1672 URL = "http://link.aip.org/link/?JES/134/1558/1",
1673 doi = "10.1149/1.2100708",
1674 notes = "blue light emitting diodes (led)",
1678 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
1679 and Hiroyuki Matsunami",
1680 title = "Growth mechanism of 6{H}-Si{C} in step-controlled
1684 journal = "J. Appl. Phys.",
1688 keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
1689 RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
1691 URL = "http://link.aip.org/link/?JAP/73/726/1",
1692 doi = "10.1063/1.353329",
1693 notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
1697 author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
1698 J. Choyke and J. L. Bradshaw and L. Henderson and M.
1699 Yoganathan and J. Yang and P. Pirouz",
1701 title = "Growth of improved quality 3{C}-Si{C} films on
1702 6{H}-Si{C} substrates",
1705 journal = "Appl. Phys. Lett.",
1708 pages = "1353--1355",
1709 keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
1710 PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
1711 MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
1713 URL = "http://link.aip.org/link/?APL/56/1353/1",
1714 doi = "10.1063/1.102512",
1715 notes = "cvd of 3c-sic on 6h-sic",
1719 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1720 Thokala and M. J. Loboda",
1722 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1723 films on 6{H}-Si{C} by chemical vapor deposition from
1727 journal = "J. Appl. Phys.",
1730 pages = "1271--1273",
1731 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1732 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1734 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1735 doi = "10.1063/1.360368",
1736 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1740 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1741 [alpha]-Si{C}(0001) at low temperatures by solid-source
1742 molecular beam epitaxy",
1743 journal = "J. Cryst. Growth",
1749 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1750 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1751 author = "A. Fissel and U. Kaiser and E. Ducke and B.
1752 Schr{\"{o}}ter and W. Richter",
1753 notes = "solid source mbe of 3c-sic on si and 6h-sic",
1756 @Article{fissel95_apl,
1757 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
1759 title = "Low-temperature growth of Si{C} thin films on Si and
1760 6{H}--Si{C} by solid-source molecular beam epitaxy",
1763 journal = "Appl. Phys. Lett.",
1766 pages = "3182--3184",
1767 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
1769 URL = "http://link.aip.org/link/?APL/66/3182/1",
1770 doi = "10.1063/1.113716",
1771 notes = "mbe 3c-sic on si and 6h-sic",
1775 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
1777 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
1781 journal = "Appl. Phys. Lett.",
1785 URL = "http://link.aip.org/link/?APL/18/509/1",
1786 doi = "10.1063/1.1653516",
1787 notes = "first time sic by ibs, follow cites for precipitation
1792 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
1793 J. Davis and G. E. Celler",
1795 title = "Formation of buried layers of beta-Si{C} using ion
1796 beam synthesis and incoherent lamp annealing",
1799 journal = "Appl. Phys. Lett.",
1802 pages = "2242--2244",
1803 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
1804 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
1805 URL = "http://link.aip.org/link/?APL/51/2242/1",
1806 doi = "10.1063/1.98953",
1807 notes = "nice tem images, sic by ibs",
1811 author = "R. I. Scace and G. A. Slack",
1813 title = "Solubility of Carbon in Silicon and Germanium",
1816 journal = "J. Chem. Phys.",
1819 pages = "1551--1555",
1820 URL = "http://link.aip.org/link/?JCP/30/1551/1",
1821 doi = "10.1063/1.1730236",
1822 notes = "solubility of c in c-si, si-c phase diagram",
1826 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
1827 F. W. Saris and W. Vandervorst",
1829 title = "Role of {C} and {B} clusters in transient diffusion of
1833 journal = "Appl. Phys. Lett.",
1836 pages = "1150--1152",
1837 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
1838 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
1840 URL = "http://link.aip.org/link/?APL/68/1150/1",
1841 doi = "10.1063/1.115706",
1842 notes = "suppression of transient enhanced diffusion (ted)",
1846 title = "Implantation and transient boron diffusion: the role
1847 of the silicon self-interstitial",
1848 journal = "Nucl. Instrum. Methods Phys. Res. B",
1853 note = "Selected Papers of the Tenth International Conference
1854 on Ion Implantation Technology (IIT '94)",
1856 doi = "DOI: 10.1016/0168-583X(94)00481-1",
1857 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
1858 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
1863 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
1864 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
1865 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
1868 title = "Physical mechanisms of transient enhanced dopant
1869 diffusion in ion-implanted silicon",
1872 journal = "J. Appl. Phys.",
1875 pages = "6031--6050",
1876 URL = "http://link.aip.org/link/?JAP/81/6031/1",
1877 doi = "10.1063/1.364452",
1878 notes = "ted, transient enhanced diffusion, c silicon trap",
1882 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
1884 title = "Formation of beta-Si{C} nanocrystals by the relaxation
1885 of Si[sub 1 - y]{C}[sub y] random alloy layers",
1888 journal = "Appl. Phys. Lett.",
1892 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
1893 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
1894 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
1896 URL = "http://link.aip.org/link/?APL/64/324/1",
1897 doi = "10.1063/1.111195",
1898 notes = "beta sic nano crystals in si, mbe, annealing",
1902 author = "Richard A. Soref",
1904 title = "Optical band gap of the ternary semiconductor Si[sub 1
1905 - x - y]Ge[sub x]{C}[sub y]",
1908 journal = "J. Appl. Phys.",
1911 pages = "2470--2472",
1912 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
1913 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
1915 URL = "http://link.aip.org/link/?JAP/70/2470/1",
1916 doi = "10.1063/1.349403",
1917 notes = "band gap of strained si by c",
1921 author = "E Kasper",
1922 title = "Superlattices of group {IV} elements, a new
1923 possibility to produce direct band gap material",
1924 journal = "Physica Scripta",
1927 URL = "http://stacks.iop.org/1402-4896/T35/232",
1929 notes = "superlattices, convert indirect band gap into a
1934 author = "H. J. Osten and J. Griesche and S. Scalese",
1936 title = "Substitutional carbon incorporation in epitaxial
1937 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
1938 molecular beam epitaxy",
1941 journal = "Appl. Phys. Lett.",
1945 keywords = "molecular beam epitaxial growth; semiconductor growth;
1946 wide band gap semiconductors; interstitials; silicon
1948 URL = "http://link.aip.org/link/?APL/74/836/1",
1949 doi = "10.1063/1.123384",
1950 notes = "substitutional c in si",
1953 @Article{hohenberg64,
1954 title = "Inhomogeneous Electron Gas",
1955 author = "P. Hohenberg and W. Kohn",
1956 journal = "Phys. Rev.",
1959 pages = "B864--B871",
1963 doi = "10.1103/PhysRev.136.B864",
1964 publisher = "American Physical Society",
1965 notes = "density functional theory, dft",
1969 title = "Self-Consistent Equations Including Exchange and
1970 Correlation Effects",
1971 author = "W. Kohn and L. J. Sham",
1972 journal = "Phys. Rev.",
1975 pages = "A1133--A1138",
1979 doi = "10.1103/PhysRev.140.A1133",
1980 publisher = "American Physical Society",
1981 notes = "dft, exchange and correlation",
1985 title = "Strain-stabilized highly concentrated pseudomorphic
1986 $Si1-x$$Cx$ layers in Si",
1987 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
1989 journal = "Phys. Rev. Lett.",
1992 pages = "3578--3581",
1996 doi = "10.1103/PhysRevLett.72.3578",
1997 publisher = "American Physical Society",
1998 notes = "high c concentration in si, heterostructure, strained
2003 title = "Electron Transport Model for Strained Silicon-Carbon
2005 author = "Shu-Tong Chang and Chung-Yi Lin",
2006 journal = "Japanese J. Appl. Phys.",
2009 pages = "2257--2262",
2012 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2013 doi = "10.1143/JJAP.44.2257",
2014 publisher = "The Japan Society of Applied Physics",
2015 notes = "enhance of electron mobility in starined si",
2019 author = "H. J. Osten and P. Gaworzewski",
2021 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2022 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2026 journal = "J. Appl. Phys.",
2029 pages = "4977--4981",
2030 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2031 semiconductors; semiconductor epitaxial layers; carrier
2032 density; Hall mobility; interstitials; defect states",
2033 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2034 doi = "10.1063/1.366364",
2035 notes = "charge transport in strained si",
2039 title = "Carbon-mediated aggregation of self-interstitials in
2040 silicon: {A} large-scale molecular dynamics study",
2041 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2042 journal = "Phys. Rev. B",
2049 doi = "10.1103/PhysRevB.69.155214",
2050 publisher = "American Physical Society",
2051 notes = "simulation using promising tersoff reparametrization",
2055 title = "Event-Based Relaxation of Continuous Disordered
2057 author = "G. T. Barkema and Normand Mousseau",
2058 journal = "Phys. Rev. Lett.",
2061 pages = "4358--4361",
2065 doi = "10.1103/PhysRevLett.77.4358",
2066 publisher = "American Physical Society",
2067 notes = "activation relaxation technique, art, speed up slow
2072 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2073 Minoukadeh and F. Willaime",
2075 title = "Some improvements of the activation-relaxation
2076 technique method for finding transition pathways on
2077 potential energy surfaces",
2080 journal = "J. Chem. Phys.",
2086 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2087 surfaces; vacancies (crystal)",
2088 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2089 doi = "10.1063/1.3088532",
2090 notes = "improvements to art, refs for methods to find
2091 transition pathways",
2094 @Article{parrinello81,
2095 author = "M. Parrinello and A. Rahman",
2097 title = "Polymorphic transitions in single crystals: {A} new
2098 molecular dynamics method",
2101 journal = "J. Appl. Phys.",
2104 pages = "7182--7190",
2105 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2106 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2107 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2108 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2109 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2111 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2112 doi = "10.1063/1.328693",
2115 @Article{stillinger85,
2116 title = "Computer simulation of local order in condensed phases
2118 author = "Frank H. Stillinger and Thomas A. Weber",
2119 journal = "Phys. Rev. B",
2122 pages = "5262--5271",
2126 doi = "10.1103/PhysRevB.31.5262",
2127 publisher = "American Physical Society",
2131 title = "Empirical potential for hydrocarbons for use in
2132 simulating the chemical vapor deposition of diamond
2134 author = "Donald W. Brenner",
2135 journal = "Phys. Rev. B",
2138 pages = "9458--9471",
2142 doi = "10.1103/PhysRevB.42.9458",
2143 publisher = "American Physical Society",
2144 notes = "brenner hydro carbons",
2148 title = "Modeling of Covalent Bonding in Solids by Inversion of
2149 Cohesive Energy Curves",
2150 author = "Martin Z. Bazant and Efthimios Kaxiras",
2151 journal = "Phys. Rev. Lett.",
2154 pages = "4370--4373",
2158 doi = "10.1103/PhysRevLett.77.4370",
2159 publisher = "American Physical Society",
2160 notes = "first si edip",
2164 title = "Environment-dependent interatomic potential for bulk
2166 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2168 journal = "Phys. Rev. B",
2171 pages = "8542--8552",
2175 doi = "10.1103/PhysRevB.56.8542",
2176 publisher = "American Physical Society",
2177 notes = "second si edip",
2181 title = "Interatomic potential for silicon defects and
2183 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2184 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2185 journal = "Phys. Rev. B",
2188 pages = "2539--2550",
2192 doi = "10.1103/PhysRevB.58.2539",
2193 publisher = "American Physical Society",
2194 notes = "latest si edip, good dislocation explanation",
2198 title = "{PARCAS} molecular dynamics code",
2199 author = "K. Nordlund",
2204 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2206 author = "Arthur F. Voter",
2207 journal = "Phys. Rev. Lett.",
2210 pages = "3908--3911",
2214 doi = "10.1103/PhysRevLett.78.3908",
2215 publisher = "American Physical Society",
2216 notes = "hyperdynamics, accelerated md",
2220 author = "Arthur F. Voter",
2222 title = "A method for accelerating the molecular dynamics
2223 simulation of infrequent events",
2226 journal = "J. Chem. Phys.",
2229 pages = "4665--4677",
2230 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2231 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2232 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2233 energy functions; surface diffusion; reaction kinetics
2234 theory; potential energy surfaces",
2235 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2236 doi = "10.1063/1.473503",
2237 notes = "improved hyperdynamics md",
2240 @Article{sorensen2000,
2241 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2243 title = "Temperature-accelerated dynamics for simulation of
2247 journal = "J. Chem. Phys.",
2250 pages = "9599--9606",
2251 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2252 MOLECULAR DYNAMICS METHOD; surface diffusion",
2253 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2254 doi = "10.1063/1.481576",
2255 notes = "temperature accelerated dynamics, tad",
2259 title = "Parallel replica method for dynamics of infrequent
2261 author = "Arthur F. Voter",
2262 journal = "Phys. Rev. B",
2265 pages = "R13985--R13988",
2269 doi = "10.1103/PhysRevB.57.R13985",
2270 publisher = "American Physical Society",
2271 notes = "parallel replica method, accelerated md",
2275 author = "Xiongwu Wu and Shaomeng Wang",
2277 title = "Enhancing systematic motion in molecular dynamics
2281 journal = "J. Chem. Phys.",
2284 pages = "9401--9410",
2285 keywords = "molecular dynamics method; argon; Lennard-Jones
2286 potential; crystallisation; liquid theory",
2287 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2288 doi = "10.1063/1.478948",
2289 notes = "self guided md, sgmd, accelerated md, enhancing
2293 @Article{choudhary05,
2294 author = "Devashish Choudhary and Paulette Clancy",
2296 title = "Application of accelerated molecular dynamics schemes
2297 to the production of amorphous silicon",
2300 journal = "J. Chem. Phys.",
2306 keywords = "molecular dynamics method; silicon; glass structure;
2307 amorphous semiconductors",
2308 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2309 doi = "10.1063/1.1878733",
2310 notes = "explanation of sgmd and hyper md, applied to amorphous
2315 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2317 title = "Carbon precipitation in silicon: Why is it so
2321 journal = "Appl. Phys. Lett.",
2324 pages = "3336--3338",
2325 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2326 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2328 URL = "http://link.aip.org/link/?APL/62/3336/1",
2329 doi = "10.1063/1.109063",
2330 notes = "interfacial energy of cubic sic and si",
2333 @Article{chaussende08,
2334 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2335 journal = "J. Cryst. Growth",
2340 note = "Proceedings of the E-MRS Conference, Symposium G -
2341 Substrates of Wide Bandgap Materials",
2343 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2344 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2345 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2346 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2347 and A. Andreadou and E. K. Polychroniadis and C.
2348 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2349 notes = "3c-sic crystal growth, sic fabrication + links,
2354 title = "Forces in Molecules",
2355 author = "R. P. Feynman",
2356 journal = "Phys. Rev.",
2363 doi = "10.1103/PhysRev.56.340",
2364 publisher = "American Physical Society",
2365 notes = "hellmann feynman forces",
2369 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2370 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2371 their Contrasting Properties",
2372 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2374 journal = "Phys. Rev. Lett.",
2381 doi = "10.1103/PhysRevLett.84.943",
2382 publisher = "American Physical Society",
2383 notes = "si sio2 and sic sio2 interface",
2386 @Article{djurabekova08,
2387 title = "Atomistic simulation of the interface structure of Si
2388 nanocrystals embedded in amorphous silica",
2389 author = "Flyura Djurabekova and Kai Nordlund",
2390 journal = "Phys. Rev. B",
2397 doi = "10.1103/PhysRevB.77.115325",
2398 publisher = "American Physical Society",
2399 notes = "nc-si in sio2, interface energy, nc construction,
2400 angular distribution, coordination",
2404 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2405 W. Liang and J. Zou",
2407 title = "Nature of interfacial defects and their roles in
2408 strain relaxation at highly lattice mismatched
2409 3{C}-Si{C}/Si (001) interface",
2412 journal = "J. Appl. Phys.",
2418 keywords = "anelastic relaxation; crystal structure; dislocations;
2419 elemental semiconductors; semiconductor growth;
2420 semiconductor thin films; silicon; silicon compounds;
2421 stacking faults; wide band gap semiconductors",
2422 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2423 doi = "10.1063/1.3234380",
2424 notes = "sic/si interface, follow refs, tem image
2425 deconvolution, dislocation defects",
2428 @Article{kitabatake93,
2429 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2432 title = "Simulations and experiments of Si{C} heteroepitaxial
2433 growth on Si(001) surface",
2436 journal = "J. Appl. Phys.",
2439 pages = "4438--4445",
2440 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2441 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2442 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2443 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2444 doi = "10.1063/1.354385",
2445 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2450 title = "Strain relaxation and thermal stability of the
2451 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2453 journal = "Thin Solid Films",
2460 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2461 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2462 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2463 keywords = "Strain relaxation",
2464 keywords = "Interfaces",
2465 keywords = "Thermal stability",
2466 keywords = "Molecular dynamics",
2467 notes = "tersoff sic/si interface study",
2471 title = "Ab initio Study of Misfit Dislocations at the
2472 $Si{C}/Si(001)$ Interface",
2473 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2475 journal = "Phys. Rev. Lett.",
2482 doi = "10.1103/PhysRevLett.89.156101",
2483 publisher = "American Physical Society",
2484 notes = "sic/si interface study",
2487 @Article{pizzagalli03,
2488 title = "Theoretical investigations of a highly mismatched
2489 interface: Si{C}/Si(001)",
2490 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2492 journal = "Phys. Rev. B",
2499 doi = "10.1103/PhysRevB.68.195302",
2500 publisher = "American Physical Society",
2501 notes = "tersoff md and ab initio sic/si interface study",
2505 title = "Atomic configurations of dislocation core and twin
2506 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2507 electron microscopy",
2508 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2509 H. Zheng and J. W. Liang",
2510 journal = "Phys. Rev. B",
2517 doi = "10.1103/PhysRevB.75.184103",
2518 publisher = "American Physical Society",
2519 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2523 @Article{hornstra58,
2524 title = "Dislocations in the diamond lattice",
2525 journal = "Journal of Physics and Chemistry of Solids",
2532 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2533 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2534 author = "J. Hornstra",
2535 notes = "dislocations in diamond lattice",
2539 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2540 Ion `Hot' Implantation",
2541 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2542 Hirao and Naoki Arai and Tomio Izumi",
2543 journal = "Japanese Journal of Applied Physics",
2545 number = "Part 1, No. 2A",
2549 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2550 doi = "10.1143/JJAP.31.343",
2551 publisher = "The Japan Society of Applied Physics",
2552 notes = "c-c bonds in c implanted si, hot implantation
2553 efficiency, c-c hard to break by thermal annealing",
2556 @Article{eichhorn99,
2557 author = "F. Eichhorn and N. Schell and W. Matz and R.
2560 title = "Strain and Si{C} particle formation in silicon
2561 implanted with carbon ions of medium fluence studied by
2562 synchrotron x-ray diffraction",
2565 journal = "J. Appl. Phys.",
2568 pages = "4184--4187",
2569 keywords = "silicon; carbon; elemental semiconductors; chemical
2570 interdiffusion; ion implantation; X-ray diffraction;
2571 precipitation; semiconductor doping",
2572 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2573 doi = "10.1063/1.371344",
2574 notes = "sic conversion by ibs, detected substitutional carbon,
2575 expansion of si lattice",
2578 @Article{eichhorn02,
2579 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2580 Metzger and W. Matz and R. K{\"{o}}gler",
2582 title = "Structural relation between Si and Si{C} formed by
2583 carbon ion implantation",
2586 journal = "J. Appl. Phys.",
2589 pages = "1287--1292",
2590 keywords = "silicon compounds; wide band gap semiconductors; ion
2591 implantation; annealing; X-ray scattering; transmission
2592 electron microscopy",
2593 URL = "http://link.aip.org/link/?JAP/91/1287/1",
2594 doi = "10.1063/1.1428105",
2595 notes = "3c-sic alignement to si host in ibs depending on
2596 temperature, might explain c into c sub trafo",
2600 author = "G Lucas and M Bertolus and L Pizzagalli",
2601 title = "An environment-dependent interatomic potential for
2602 silicon carbide: calculation of bulk properties,
2603 high-pressure phases, point and extended defects, and
2604 amorphous structures",
2605 journal = "J. Phys.: Condens. Matter",
2609 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
2615 author = "J Godet and L Pizzagalli and S Brochard and P
2617 title = "Comparison between classical potentials and ab initio
2618 methods for silicon under large shear",
2619 journal = "J. Phys.: Condens. Matter",
2623 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
2625 notes = "comparison of empirical potentials, stillinger weber,
2626 edip, tersoff, ab initio",
2629 @Article{moriguchi98,
2630 title = "Verification of Tersoff's Potential for Static
2631 Structural Analysis of Solids of Group-{IV} Elements",
2632 author = "Koji Moriguchi and Akira Shintani",
2633 journal = "Japanese J. Appl. Phys.",
2635 number = "Part 1, No. 2",
2639 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
2640 doi = "10.1143/JJAP.37.414",
2641 publisher = "The Japan Society of Applied Physics",
2642 notes = "tersoff stringent test",
2645 @Article{mazzarolo01,
2646 title = "Low-energy recoils in crystalline silicon: Quantum
2648 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
2649 Lulli and Eros Albertazzi",
2650 journal = "Phys. Rev. B",
2657 doi = "10.1103/PhysRevB.63.195207",
2658 publisher = "American Physical Society",
2661 @Article{holmstroem08,
2662 title = "Threshold defect production in silicon determined by
2663 density functional theory molecular dynamics
2665 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
2666 journal = "Phys. Rev. B",
2673 doi = "10.1103/PhysRevB.78.045202",
2674 publisher = "American Physical Society",
2675 notes = "threshold displacement comparison empirical and ab
2679 @Article{nordlund97,
2680 title = "Repulsive interatomic potentials calculated using
2681 Hartree-Fock and density-functional theory methods",
2682 journal = "Nucl. Instrum. Methods Phys. Res. B",
2689 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
2690 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
2691 author = "K. Nordlund and N. Runeberg and D. Sundholm",
2692 notes = "repulsive ab initio potential",
2696 title = "Efficiency of ab-initio total energy calculations for
2697 metals and semiconductors using a plane-wave basis
2699 journal = "Comput. Mater. Sci.",
2706 doi = "DOI: 10.1016/0927-0256(96)00008-0",
2707 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
2708 author = "G. Kresse and J. Furthm{\"{u}}ller",
2713 title = "Projector augmented-wave method",
2714 author = "P. E. Bl{\"o}chl",
2715 journal = "Phys. Rev. B",
2718 pages = "17953--17979",
2722 doi = "10.1103/PhysRevB.50.17953",
2723 publisher = "American Physical Society",
2724 notes = "paw method",
2728 title = "Norm-Conserving Pseudopotentials",
2729 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
2730 journal = "Phys. Rev. Lett.",
2733 pages = "1494--1497",
2737 doi = "10.1103/PhysRevLett.43.1494",
2738 publisher = "American Physical Society",
2739 notes = "norm-conserving pseudopotentials",
2742 @Article{vanderbilt90,
2743 title = "Soft self-consistent pseudopotentials in a generalized
2744 eigenvalue formalism",
2745 author = "David Vanderbilt",
2746 journal = "Phys. Rev. B",
2749 pages = "7892--7895",
2753 doi = "10.1103/PhysRevB.41.7892",
2754 publisher = "American Physical Society",
2755 notes = "vasp pseudopotentials",
2759 title = "Accurate and simple density functional for the
2760 electronic exchange energy: Generalized gradient
2762 author = "John P. Perdew and Yue Wang",
2763 journal = "Phys. Rev. B",
2766 pages = "8800--8802",
2770 doi = "10.1103/PhysRevB.33.8800",
2771 publisher = "American Physical Society",
2772 notes = "rapid communication gga",
2776 title = "Generalized gradient approximations for exchange and
2777 correlation: {A} look backward and forward",
2778 journal = "Physica B: Condensed Matter",
2785 doi = "DOI: 10.1016/0921-4526(91)90409-8",
2786 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
2787 author = "John P. Perdew",
2788 notes = "gga overview",
2792 title = "Atoms, molecules, solids, and surfaces: Applications
2793 of the generalized gradient approximation for exchange
2795 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
2796 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
2797 and Carlos Fiolhais",
2798 journal = "Phys. Rev. B",
2801 pages = "6671--6687",
2805 doi = "10.1103/PhysRevB.46.6671",
2806 publisher = "American Physical Society",
2807 notes = "gga pw91 (as in vasp)",
2810 @Article{baldereschi73,
2811 title = "Mean-Value Point in the Brillouin Zone",
2812 author = "A. Baldereschi",
2813 journal = "Phys. Rev. B",
2816 pages = "5212--5215",
2820 doi = "10.1103/PhysRevB.7.5212",
2821 publisher = "American Physical Society",
2822 notes = "mean value k point",
2826 title = "Ab initio pseudopotential calculations of dopant
2828 journal = "Comput. Mater. Sci.",
2835 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
2836 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
2837 author = "Jing Zhu",
2838 keywords = "TED (transient enhanced diffusion)",
2839 keywords = "Boron dopant",
2840 keywords = "Carbon dopant",
2841 keywords = "Defect",
2842 keywords = "ab initio pseudopotential method",
2843 keywords = "Impurity cluster",
2844 notes = "binding of c to si interstitial, c in si defects",
2848 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
2850 title = "Si{C} buried layer formation by ion beam synthesis at
2854 journal = "Appl. Phys. Lett.",
2857 pages = "2646--2648",
2858 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
2859 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
2860 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
2861 ELECTRON MICROSCOPY",
2862 URL = "http://link.aip.org/link/?APL/66/2646/1",
2863 doi = "10.1063/1.113112",
2864 notes = "precipitation mechanism by substitutional carbon, si
2865 self interstitials react with further implanted c",
2869 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
2870 Kolodzey and A. Hairie",
2872 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
2876 journal = "J. Appl. Phys.",
2879 pages = "4631--4633",
2880 keywords = "silicon compounds; precipitation; localised modes;
2881 semiconductor epitaxial layers; infrared spectra;
2882 Fourier transform spectra; thermal stability;
2884 URL = "http://link.aip.org/link/?JAP/84/4631/1",
2885 doi = "10.1063/1.368703",
2886 notes = "coherent 3C-SiC, topotactic, critical coherence size",
2890 author = "R Jones and B J Coomer and P R Briddon",
2891 title = "Quantum mechanical modelling of defects in
2893 journal = "J. Phys.: Condens. Matter",
2897 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
2899 notes = "ab inito init, vibrational modes, c defect in si",
2903 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
2904 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
2905 J. E. Greene and S. G. Bishop",
2907 title = "Carbon incorporation pathways and lattice sites in
2908 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
2909 molecular-beam epitaxy",
2912 journal = "J. Appl. Phys.",
2915 pages = "5716--5727",
2916 URL = "http://link.aip.org/link/?JAP/91/5716/1",
2917 doi = "10.1063/1.1465122",
2918 notes = "c substitutional incorporation pathway, dft and expt",
2922 title = "Dynamic properties of interstitial carbon and
2923 carbon-carbon pair defects in silicon",
2924 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
2926 journal = "Phys. Rev. B",
2929 pages = "2188--2194",
2933 doi = "10.1103/PhysRevB.55.2188",
2934 publisher = "American Physical Society",
2935 notes = "ab initio c in si and di-carbon defect, no formation
2936 energies, different migration barriers and paths",
2940 title = "Interstitial carbon and the carbon-carbon pair in
2941 silicon: Semiempirical electronic-structure
2943 author = "Matthew J. Burnard and Gary G. DeLeo",
2944 journal = "Phys. Rev. B",
2947 pages = "10217--10225",
2951 doi = "10.1103/PhysRevB.47.10217",
2952 publisher = "American Physical Society",
2953 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
2954 carbon defect, formation energies",
2958 title = "Electronic structure of interstitial carbon in
2960 author = "Morgan Besson and Gary G. DeLeo",
2961 journal = "Phys. Rev. B",
2964 pages = "4028--4033",
2968 doi = "10.1103/PhysRevB.43.4028",
2969 publisher = "American Physical Society",
2973 title = "Review of atomistic simulations of surface diffusion
2974 and growth on semiconductors",
2975 journal = "Comput. Mater. Sci.",
2980 note = "Proceedings of the Workshop on Virtual Molecular Beam
2983 doi = "DOI: 10.1016/0927-0256(96)00030-4",
2984 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
2985 author = "Efthimios Kaxiras",
2986 notes = "might contain c 100 db formation energy, overview md,
2987 tight binding, first principles",
2990 @Article{kaukonen98,
2991 title = "Effect of {N} and {B} doping on the growth of {CVD}
2993 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
2995 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
2996 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
2998 journal = "Phys. Rev. B",
3001 pages = "9965--9970",
3005 doi = "10.1103/PhysRevB.57.9965",
3006 publisher = "American Physical Society",
3007 notes = "constrained conjugate gradient relaxation technique
3012 title = "Correlation between the antisite pair and the ${DI}$
3014 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3015 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3017 journal = "Phys. Rev. B",
3024 doi = "10.1103/PhysRevB.67.155203",
3025 publisher = "American Physical Society",
3029 title = "Production and recovery of defects in Si{C} after
3030 irradiation and deformation",
3031 journal = "J. Nucl. Mater.",
3034 pages = "1803--1808",
3038 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3039 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3040 author = "J. Chen and P. Jung and H. Klein",
3044 title = "Accumulation, dynamic annealing and thermal recovery
3045 of ion-beam-induced disorder in silicon carbide",
3046 journal = "Nucl. Instrum. Methods Phys. Res. B",
3053 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3054 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3055 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3058 @Article{bockstedte03,
3059 title = "Ab initio study of the migration of intrinsic defects
3061 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3063 journal = "Phys. Rev. B",
3070 doi = "10.1103/PhysRevB.68.205201",
3071 publisher = "American Physical Society",
3072 notes = "defect migration in sic",
3076 title = "Theoretical study of vacancy diffusion and
3077 vacancy-assisted clustering of antisites in Si{C}",
3078 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3080 journal = "Phys. Rev. B",
3087 doi = "10.1103/PhysRevB.68.155208",
3088 publisher = "American Physical Society",
3092 journal = "Telegrafiya i Telefoniya bez Provodov",
3096 author = "O. V. Lossev",
3100 title = "Luminous carborundum detector and detection effect and
3101 oscillations with crystals",
3102 journal = "Philosophical Magazine Series 7",
3105 pages = "1024--1044",
3107 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3108 author = "O. V. Lossev",
3112 journal = "Physik. Zeitschr.",
3116 author = "O. V. Lossev",
3120 journal = "Physik. Zeitschr.",
3124 author = "O. V. Lossev",
3128 journal = "Physik. Zeitschr.",
3132 author = "O. V. Lossev",
3136 title = "A note on carborundum",
3137 journal = "Electrical World",
3141 author = "H. J. Round",
3144 @Article{vashishath08,
3145 title = "Recent trends in silicon carbide device research",
3146 journal = "Mj. Int. J. Sci. Tech.",
3151 author = "Munish Vashishath and Ashoke K. Chatterjee",
3152 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3153 notes = "sic polytype electronic properties",
3157 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3159 title = "Growth and Properties of beta-Si{C} Single Crystals",
3162 journal = "Journal of Applied Physics",
3166 URL = "http://link.aip.org/link/?JAP/37/333/1",
3167 doi = "10.1063/1.1707837",
3168 notes = "sic melt growth",
3172 author = "A. E. van Arkel and J. H. de Boer",
3173 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3175 publisher = "WILEY-VCH Verlag GmbH",
3177 journal = "Z. Anorg. Chem.",
3180 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3181 doi = "10.1002/zaac.19251480133",
3182 notes = "van arkel apparatus",
3186 author = "K. Moers",
3188 journal = "Z. Anorg. Chem.",
3191 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3196 author = "J. T. Kendall",
3197 title = "Electronic Conduction in Silicon Carbide",
3200 journal = "The Journal of Chemical Physics",
3204 URL = "http://link.aip.org/link/?JCP/21/821/1",
3205 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3210 author = "J. A. Lely",
3212 journal = "Ber. Deut. Keram. Ges.",
3215 notes = "lely sublimation growth process",
3218 @Article{knippenberg63,
3219 author = "W. F. Knippenberg",
3221 journal = "Philips Res. Repts.",
3224 notes = "acheson process",
3227 @Article{hoffmann82,
3228 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3231 title = "Silicon carbide blue light emitting diodes with
3232 improved external quantum efficiency",
3235 journal = "Journal of Applied Physics",
3238 pages = "6962--6967",
3239 keywords = "light emitting diodes; silicon carbides; quantum
3240 efficiency; visible radiation; experimental data;
3241 epitaxy; fabrication; medium temperature; layers;
3242 aluminium; nitrogen; substrates; pn junctions;
3243 electroluminescence; spectra; current density;
3245 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3246 doi = "10.1063/1.330041",