2 % bibliography database
6 author = "Paul Erhart and Karsten Albe",
7 title = "Analytical potential for atomistic simulations of
8 silicon, carbon, and silicon carbide",
11 journal = "Phys. Rev. B",
17 notes = "alble reparametrization, analytical bond oder
19 keywords = "silicon; elemental semiconductors; carbon; silicon
20 compounds; wide band gap semiconductors; elasticity;
21 enthalpy; point defects; crystallographic shear; atomic
23 URL = "http://link.aps.org/abstract/PRB/v71/e035211",
24 doi = "10.1103/PhysRevB.71.035211",
28 title = "Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon",
30 author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
31 journal = "Phys. Rev. B",
38 doi = "10.1103/PhysRevB.65.195124",
39 publisher = "American Physical Society",
40 notes = "derivation of albe bond order formalism",
44 title = "The solubility of carbon in pulled silicon crystals",
45 journal = "Journal of Physics and Chemistry of Solids",
52 doi = "DOI: 10.1016/S0022-3697(71)80179-8",
53 URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
54 author = "A. R. Bean and R. C. Newman",
55 notes = "experimental solubility data of carbon in silicon",
59 author = "M. A. Capano and R. J. Trew",
60 title = "Silicon Carbide Electronic Materials and Devices",
61 journal = "MRS Bull.",
68 author = "G. R. Fisher and P. Barnes",
69 title = "Towards a unified view of polytypism in silicon
71 journal = "Philos. Mag. B",
75 notes = "sic polytypes",
79 author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
80 A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
81 Serre and A. Perez-Rodriguez",
82 title = "Synthesis of nano-sized Si{C} precipitates in Si by
83 simultaneous dual-beam implantation of {C}+ and Si+
85 journal = "Appl. Phys. A: Mater. Sci. Process.",
90 notes = "dual implantation, sic prec enhanced by vacancies,
91 precipitation by interstitial and substitutional
92 carbon, both mechanisms explained + refs",
96 title = "Carbon-mediated effects in silicon and in
97 silicon-related materials",
98 journal = "Materials Chemistry and Physics",
105 doi = "DOI: 10.1016/0254-0584(95)01673-I",
106 URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
107 author = "W. Skorupa and R. A. Yankov",
108 notes = "review of silicon carbon compound",
112 author = "P. S. de Laplace",
113 title = "Th\'eorie analytique des probabilit\'es",
114 series = "Oeuvres Compl\`etes de Laplace",
116 publisher = "Gauthier-Villars",
120 @Article{mattoni2007,
121 author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
122 title = "{Atomistic modeling of brittleness in covalent
124 journal = "Phys. Rev. B",
130 doi = "10.1103/PhysRevB.76.224103",
131 notes = "adopted tersoff potential for Si, C, Ge ad SiC;
132 longe(r)-range-interactions, brittle propagation of
133 fracture, more available potentials, universal energy
134 relation (uer), minimum range model (mrm)",
138 title = "Comparative study of silicon empirical interatomic
140 author = "H. Balamane and T. Halicioglu and W. A. Tiller",
141 journal = "Phys. Rev. B",
144 pages = "2250--2279",
148 doi = "10.1103/PhysRevB.46.2250",
149 publisher = "American Physical Society",
150 notes = "comparison of classical potentials for si",
154 title = "Stress relaxation in $a-Si$ induced by ion
156 author = "H. M. Urbassek M. Koster",
157 journal = "Phys. Rev. B",
160 pages = "11219--11224",
164 doi = "10.1103/PhysRevB.62.11219",
165 publisher = "American Physical Society",
166 notes = "virial derivation for 3-body tersoff potential",
169 @Article{breadmore99,
170 title = "Direct simulation of ion-beam-induced stressing and
171 amorphization of silicon",
172 author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
173 journal = "Phys. Rev. B",
176 pages = "12610--12616",
180 doi = "10.1103/PhysRevB.60.12610",
181 publisher = "American Physical Society",
182 notes = "virial derivation for 3-body tersoff potential",
186 title = "First-Principles Calculation of Stress",
187 author = "O. H. Nielsen and Richard M. Martin",
188 journal = "Phys. Rev. Lett.",
195 doi = "10.1103/PhysRevLett.50.697",
196 publisher = "American Physical Society",
197 notes = "generalization of virial theorem",
201 title = "Quantum-mechanical theory of stress and force",
202 author = "O. H. Nielsen and Richard M. Martin",
203 journal = "Phys. Rev. B",
206 pages = "3780--3791",
210 doi = "10.1103/PhysRevB.32.3780",
211 publisher = "American Physical Society",
212 notes = "dft virial stress and forces",
216 author = "Henri Moissan",
217 title = "Nouvelles recherches sur la météorité de Cañon
219 journal = "Comptes rendus de l'Académie des Sciences",
226 author = "Y. S. Park",
227 title = "Si{C} Materials and Devices",
228 publisher = "Academic Press",
229 address = "San Diego",
234 author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
235 Calvin H. Carter Jr. and D. Asbury",
236 title = "Si{C} Seeded Boule Growth",
237 journal = "Materials Science Forum",
241 notes = "modified lely process, micropipes",
245 title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
246 Thermodynamical Properties of Lennard-Jones Molecules",
247 author = "Loup Verlet",
248 journal = "Phys. Rev.",
254 doi = "10.1103/PhysRev.159.98",
255 publisher = "American Physical Society",
256 notes = "velocity verlet integration algorithm equation of
260 @Article{berendsen84,
261 author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
262 Gunsteren and A. DiNola and J. R. Haak",
264 title = "Molecular dynamics with coupling to an external bath",
267 journal = "J. Chem. Phys.",
270 pages = "3684--3690",
271 keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
272 COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
273 URL = "http://link.aip.org/link/?JCP/81/3684/1",
274 doi = "10.1063/1.448118",
275 notes = "berendsen thermostat barostat",
279 author = "Hanchen Huang and N M Ghoniem and J K Wong and M
281 title = "Molecular dynamics determination of defect energetics
282 in beta -Si{C} using three representative empirical
284 journal = "Modell. Simul. Mater. Sci. Eng.",
288 URL = "http://stacks.iop.org/0965-0393/3/615",
289 notes = "comparison of tersoff, pearson and eam for defect
290 energetics in sic; (m)eam parameters for sic",
295 title = "Relationship between the embedded-atom method and
297 author = "Donald W. Brenner",
298 journal = "Phys. Rev. Lett.",
305 doi = "10.1103/PhysRevLett.63.1022",
306 publisher = "American Physical Society",
307 notes = "relation of tersoff and eam potential",
311 title = "Molecular-dynamics study of self-interstitials in
313 author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
314 journal = "Phys. Rev. B",
317 pages = "9552--9558",
321 doi = "10.1103/PhysRevB.35.9552",
322 publisher = "American Physical Society",
323 notes = "selft-interstitials in silicon, stillinger-weber,
324 calculation of defect formation energy, defect
329 title = "Extended interstitials in silicon and germanium",
330 author = "H. R. Schober",
331 journal = "Phys. Rev. B",
334 pages = "13013--13015",
338 doi = "10.1103/PhysRevB.39.13013",
339 publisher = "American Physical Society",
340 notes = "stillinger-weber silicon 110 stable and metastable
341 dumbbell configuration",
345 title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
346 Defect accumulation, topological features, and
348 author = "F. Gao and W. J. Weber",
349 journal = "Phys. Rev. B",
356 doi = "10.1103/PhysRevB.66.024106",
357 publisher = "American Physical Society",
358 notes = "sic intro, si cascade in 3c-sic, amorphization,
359 tersoff modified, pair correlation of amorphous sic, md
363 @Article{devanathan98,
364 title = "Computer simulation of a 10 ke{V} Si displacement
366 journal = "Nucl. Instrum. Methods Phys. Res. B",
372 doi = "DOI: 10.1016/S0168-583X(98)00084-6",
373 author = "R. Devanathan and W. J. Weber and T. Diaz de la
375 notes = "modified tersoff short range potential, ab initio
379 @Article{devanathan98_2,
380 title = "Displacement threshold energies in [beta]-Si{C}",
381 journal = "J. Nucl. Mater.",
387 doi = "DOI: 10.1016/S0022-3115(97)00304-8",
388 author = "R. Devanathan and T. Diaz de la Rubia and W. J.
390 notes = "modified tersoff, ab initio, combined ab initio
394 @Article{kitabatake00,
395 title = "Si{C}/Si heteroepitaxial growth",
396 author = "M. Kitabatake",
397 journal = "Thin Solid Films",
402 notes = "md simulation, sic si heteroepitaxy, mbe",
406 title = "Intrinsic point defects in crystalline silicon:
407 Tight-binding molecular dynamics studies of
408 self-diffusion, interstitial-vacancy recombination, and
410 author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
412 journal = "Phys. Rev. B",
415 pages = "14279--14289",
419 doi = "10.1103/PhysRevB.55.14279",
420 publisher = "American Physical Society",
421 notes = "si self interstitial, diffusion, tbmd",
425 author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
428 title = "A kinetic Monte--Carlo study of the effective
429 diffusivity of the silicon self-interstitial in the
430 presence of carbon and boron",
433 journal = "J. Appl. Phys.",
436 pages = "1963--1967",
437 keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
438 CARBON ADDITIONS; BORON ADDITIONS; elemental
439 semiconductors; self-diffusion",
440 URL = "http://link.aip.org/link/?JAP/84/1963/1",
441 doi = "10.1063/1.368328",
442 notes = "kinetic monte carlo of si self interstitial
447 title = "Barrier to Migration of the Silicon
449 author = "Y. Bar-Yam and J. D. Joannopoulos",
450 journal = "Phys. Rev. Lett.",
453 pages = "1129--1132",
457 doi = "10.1103/PhysRevLett.52.1129",
458 publisher = "American Physical Society",
459 notes = "si self-interstitial migration barrier",
462 @Article{bar-yam84_2,
463 title = "Electronic structure and total-energy migration
464 barriers of silicon self-interstitials",
465 author = "Y. Bar-Yam and J. D. Joannopoulos",
466 journal = "Phys. Rev. B",
469 pages = "1844--1852",
473 doi = "10.1103/PhysRevB.30.1844",
474 publisher = "American Physical Society",
478 title = "First-principles calculations of self-diffusion
479 constants in silicon",
480 author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
481 and D. B. Laks and W. Andreoni and S. T. Pantelides",
482 journal = "Phys. Rev. Lett.",
485 pages = "2435--2438",
489 doi = "10.1103/PhysRevLett.70.2435",
490 publisher = "American Physical Society",
491 notes = "si self int diffusion by ab initio md, formation
492 entropy calculations",
496 title = "Tight-binding theory of native point defects in
498 author = "L. Colombo",
499 journal = "Annu. Rev. Mater. Res.",
504 doi = "10.1146/annurev.matsci.32.111601.103036",
505 publisher = "Annual Reviews",
506 notes = "si self interstitial, tbmd, virial stress",
509 @Article{al-mushadani03,
510 title = "Free-energy calculations of intrinsic point defects in
512 author = "O. K. Al-Mushadani and R. J. Needs",
513 journal = "Phys. Rev. B",
520 doi = "10.1103/PhysRevB.68.235205",
521 publisher = "American Physical Society",
522 notes = "formation energies of intrinisc point defects in
523 silicon, si self interstitials, free energy",
526 @Article{goedecker02,
527 title = "A Fourfold Coordinated Point Defect in Silicon",
528 author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
529 journal = "Phys. Rev. Lett.",
536 doi = "10.1103/PhysRevLett.88.235501",
537 publisher = "American Physical Society",
538 notes = "first time ffcd, fourfold coordinated point defect in
543 title = "Ab initio molecular dynamics simulation of
544 self-interstitial diffusion in silicon",
545 author = "Beat Sahli and Wolfgang Fichtner",
546 journal = "Phys. Rev. B",
553 doi = "10.1103/PhysRevB.72.245210",
554 publisher = "American Physical Society",
555 notes = "si self int, diffusion, barrier height, voronoi
560 title = "Ab initio calculations of the interaction between
561 native point defects in silicon",
562 journal = "Mater. Sci. Eng., B",
567 note = "EMRS 2005, Symposium D - Materials Science and Device
568 Issues for Future Technologies",
570 doi = "DOI: 10.1016/j.mseb.2005.08.072",
571 URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
572 author = "G. Hobler and G. Kresse",
573 notes = "vasp intrinsic si defect interaction study, capture
578 title = "Ab initio study of self-diffusion in silicon over a
579 wide temperature range: Point defect states and
580 migration mechanisms",
581 author = "Shangyi Ma and Shaoqing Wang",
582 journal = "Phys. Rev. B",
589 doi = "10.1103/PhysRevB.81.193203",
590 publisher = "American Physical Society",
591 notes = "si self interstitial diffusion + refs",
595 title = "Atomistic simulations on the thermal stability of the
596 antisite pair in 3{C}- and 4{H}-Si{C}",
597 author = "M. Posselt and F. Gao and W. J. Weber",
598 journal = "Phys. Rev. B",
605 doi = "10.1103/PhysRevB.73.125206",
606 publisher = "American Physical Society",
610 title = "Correlation between self-diffusion in Si and the
611 migration mechanisms of vacancies and
612 self-interstitials: An atomistic study",
613 author = "M. Posselt and F. Gao and H. Bracht",
614 journal = "Phys. Rev. B",
621 doi = "10.1103/PhysRevB.78.035208",
622 publisher = "American Physical Society",
623 notes = "si self-interstitial and vacancy diffusion, stillinger
628 title = "Ab initio and empirical-potential studies of defect
629 properties in $3{C}-Si{C}$",
630 author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
632 journal = "Phys. Rev. B",
639 doi = "10.1103/PhysRevB.64.245208",
640 publisher = "American Physical Society",
641 notes = "defects in 3c-sic",
645 title = "Empirical potential approach for defect properties in
647 journal = "Nucl. Instrum. Methods Phys. Res. B",
654 doi = "DOI: 10.1016/S0168-583X(02)00600-6",
655 URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
656 author = "Fei Gao and William J. Weber",
657 keywords = "Empirical potential",
658 keywords = "Defect properties",
659 keywords = "Silicon carbide",
660 keywords = "Computer simulation",
661 notes = "sic potential, brenner type, like erhart/albe",
665 title = "Atomistic study of intrinsic defect migration in
667 author = "Fei Gao and William J. Weber and M. Posselt and V.
669 journal = "Phys. Rev. B",
676 doi = "10.1103/PhysRevB.69.245205",
677 publisher = "American Physical Society",
678 notes = "defect migration in sic",
682 author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
685 title = "Ab Initio atomic simulations of antisite pair recovery
686 in cubic silicon carbide",
689 journal = "Appl. Phys. Lett.",
695 keywords = "ab initio calculations; silicon compounds; antisite
696 defects; wide band gap semiconductors; molecular
697 dynamics method; density functional theory;
698 electron-hole recombination; photoluminescence;
699 impurities; diffusion",
700 URL = "http://link.aip.org/link/?APL/90/221915/1",
701 doi = "10.1063/1.2743751",
704 @Article{mattoni2002,
705 title = "Self-interstitial trapping by carbon complexes in
706 crystalline silicon",
707 author = "A. Mattoni and F. Bernardini and L. Colombo",
708 journal = "Phys. Rev. B",
715 doi = "10.1103/PhysRevB.66.195214",
716 publisher = "American Physical Society",
717 notes = "c in c-si, diffusion, interstitial configuration +
718 links, interaction of carbon and silicon interstitials,
719 tersoff suitability",
723 title = "Calculations of Silicon Self-Interstitial Defects",
724 author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
726 journal = "Phys. Rev. Lett.",
729 pages = "2351--2354",
733 doi = "10.1103/PhysRevLett.83.2351",
734 publisher = "American Physical Society",
735 notes = "nice images of the defects, si defect overview +
740 title = "Identification of the migration path of interstitial
742 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
743 journal = "Phys. Rev. B",
746 pages = "7439--7442",
750 doi = "10.1103/PhysRevB.50.7439",
751 publisher = "American Physical Society",
752 notes = "carbon interstitial migration path shown, 001 c-si
757 title = "Theory of carbon-carbon pairs in silicon",
758 author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
759 journal = "Phys. Rev. B",
762 pages = "9845--9850",
766 doi = "10.1103/PhysRevB.58.9845",
767 publisher = "American Physical Society",
768 notes = "c_i c_s pair configuration, theoretical results",
772 title = "Bistable interstitial-carbon--substitutional-carbon
774 author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
776 journal = "Phys. Rev. B",
779 pages = "5765--5783",
783 doi = "10.1103/PhysRevB.42.5765",
784 publisher = "American Physical Society",
785 notes = "c_i c_s pair configuration, experimental results",
789 author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
790 Shifeng Lu and Xiang-Yang Liu",
792 title = "Ab initio modeling and experimental study of {C}--{B}
796 journal = "Appl. Phys. Lett.",
800 keywords = "silicon; boron; carbon; elemental semiconductors;
801 impurity-defect interactions; ab initio calculations;
802 secondary ion mass spectra; diffusion; interstitials",
803 URL = "http://link.aip.org/link/?APL/80/52/1",
804 doi = "10.1063/1.1430505",
805 notes = "c-c 100 split, lower as a and b states of capaz",
809 title = "Ab initio investigation of carbon-related defects in
811 author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
813 journal = "Phys. Rev. B",
816 pages = "12554--12557",
820 doi = "10.1103/PhysRevB.47.12554",
821 publisher = "American Physical Society",
822 notes = "c interstitials in crystalline silicon",
826 title = "Microscopic Theory of Atomic Diffusion Mechanisms in
828 author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
829 Sokrates T. Pantelides",
830 journal = "Phys. Rev. Lett.",
833 pages = "1814--1817",
837 doi = "10.1103/PhysRevLett.52.1814",
838 publisher = "American Physical Society",
839 notes = "microscopic theory diffusion silicon dft migration
844 title = "Unified Approach for Molecular Dynamics and
845 Density-Functional Theory",
846 author = "R. Car and M. Parrinello",
847 journal = "Phys. Rev. Lett.",
850 pages = "2471--2474",
854 doi = "10.1103/PhysRevLett.55.2471",
855 publisher = "American Physical Society",
856 notes = "car parrinello method, dft and md",
860 title = "Short-range order, bulk moduli, and physical trends in
861 c-$Si1-x$$Cx$ alloys",
862 author = "P. C. Kelires",
863 journal = "Phys. Rev. B",
866 pages = "8784--8787",
870 doi = "10.1103/PhysRevB.55.8784",
871 publisher = "American Physical Society",
872 notes = "c strained si, montecarlo md, bulk moduli, next
877 title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
878 Application to the $Si1-x-yGexCy$ System",
879 author = "P. C. Kelires",
880 journal = "Phys. Rev. Lett.",
883 pages = "1114--1117",
887 doi = "10.1103/PhysRevLett.75.1114",
888 publisher = "American Physical Society",
889 notes = "mc md, strain compensation in si ge by c insertion",
893 title = "Low temperature electron irradiation of silicon
895 journal = "Solid State Communications",
902 doi = "DOI: 10.1016/0038-1098(70)90074-8",
903 URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
904 author = "A. R. Bean and R. C. Newman",
908 title = "{EPR} Observation of the Isolated Interstitial Carbon
910 author = "G. D. Watkins and K. L. Brower",
911 journal = "Phys. Rev. Lett.",
914 pages = "1329--1332",
918 doi = "10.1103/PhysRevLett.36.1329",
919 publisher = "American Physical Society",
920 notes = "epr observations of 100 interstitial carbon atom in
925 title = "{EPR} identification of the single-acceptor state of
926 interstitial carbon in silicon",
927 author = "L. W. Song and G. D. Watkins",
928 journal = "Phys. Rev. B",
931 pages = "5759--5764",
935 doi = "10.1103/PhysRevB.42.5759",
936 publisher = "American Physical Society",
937 notes = "carbon diffusion in silicon",
941 author = "A K Tipping and R C Newman",
942 title = "The diffusion coefficient of interstitial carbon in
944 journal = "Semicond. Sci. Technol.",
948 URL = "http://stacks.iop.org/0268-1242/2/315",
950 notes = "diffusion coefficient of carbon interstitials in
955 title = "Carbon incorporation into Si at high concentrations by
956 ion implantation and solid phase epitaxy",
957 author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
958 Picraux and J. K. Watanabe and J. W. Mayer",
959 journal = "J. Appl. Phys.",
964 doi = "10.1063/1.360806",
965 notes = "strained silicon, carbon supersaturation",
968 @Article{laveant2002,
969 title = "Epitaxy of carbon-rich silicon with {MBE}",
970 journal = "Mater. Sci. Eng., B",
976 doi = "DOI: 10.1016/S0921-5107(01)00794-2",
977 URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
978 author = "P. Lav\'eant and G. Gerth and P. Werner and U.
980 notes = "low c in si, tensile stress to compensate compressive
981 stress, avoid sic precipitation",
985 author = "P. Werner and S. Eichler and G. Mariani and R.
986 K{\"{o}}gler and W. Skorupa",
987 title = "Investigation of {C}[sub x]Si defects in {C} implanted
988 silicon by transmission electron microscopy",
991 journal = "Appl. Phys. Lett.",
995 keywords = "silicon; ion implantation; carbon; crystal defects;
996 transmission electron microscopy; annealing; positron
997 annihilation; secondary ion mass spectroscopy; buried
998 layers; precipitation",
999 URL = "http://link.aip.org/link/?APL/70/252/1",
1000 doi = "10.1063/1.118381",
1001 notes = "si-c complexes, agglomerate, sic in si matrix, sic
1005 @InProceedings{werner96,
1006 author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
1008 booktitle = "Ion Implantation Technology. Proceedings of the 11th
1009 International Conference on",
1010 title = "{TEM} investigation of {C}-Si defects in carbon
1017 doi = "10.1109/IIT.1996.586497",
1019 notes = "c-si agglomerates dumbbells",
1023 author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
1026 title = "Carbon diffusion in silicon",
1029 journal = "Appl. Phys. Lett.",
1032 pages = "2465--2467",
1033 keywords = "silicon; carbon; elemental semiconductors; diffusion;
1034 secondary ion mass spectra; semiconductor epitaxial
1035 layers; annealing; impurity-defect interactions;
1036 impurity distribution",
1037 URL = "http://link.aip.org/link/?APL/73/2465/1",
1038 doi = "10.1063/1.122483",
1039 notes = "c diffusion in si, kick out mechnism",
1043 author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
1044 Picraux and J. K. Watanabe and J. W. Mayer",
1046 title = "Precipitation and relaxation in strained Si[sub 1 -
1047 y]{C}[sub y]/Si heterostructures",
1050 journal = "J. Appl. Phys.",
1053 pages = "3656--3668",
1054 keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
1055 URL = "http://link.aip.org/link/?JAP/76/3656/1",
1056 doi = "10.1063/1.357429",
1057 notes = "strained si-c to 3c-sic, carbon nucleation + refs,
1058 precipitation by substitutional carbon, coherent prec,
1059 coherent to incoherent transition strain vs interface
1064 author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
1067 title = "Investigation of the high temperature behavior of
1068 strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
1071 journal = "J. Appl. Phys.",
1074 pages = "1934--1937",
1075 keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
1076 XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
1077 PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
1078 TEMPERATURE RANGE 04001000 K",
1079 URL = "http://link.aip.org/link/?JAP/77/1934/1",
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1291 journal = "Mater. Sci. Eng., C",
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1333 note = "Proceedings of the 11th Biennial (US) Workshop on
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1344 title = "Substrates for gallium nitride epitaxy",
1345 journal = "Materials Science and Engineering: R: Reports",
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1376 author = "B. J. Alder and T. E. Wainwright",
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1383 pages = "1208--1209",
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1385 doi = "10.1063/1.1743957",
1389 author = "B. J. Alder and T. E. Wainwright",
1390 title = "Studies in Molecular Dynamics. {I}. General Method",
1393 journal = "J. Chem. Phys.",
1397 URL = "http://link.aip.org/link/?JCP/31/459/1",
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1473 publisher = "American Physical Society",
1477 title = "Carbon defects and defect reactions in silicon",
1478 author = "J. Tersoff",
1479 journal = "Phys. Rev. Lett.",
1482 pages = "1757--1760",
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1487 publisher = "American Physical Society",
1491 title = "Point defects and dopant diffusion in silicon",
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1493 journal = "Rev. Mod. Phys.",
1500 doi = "10.1103/RevModPhys.61.289",
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1506 journal = "Nucl. Instrum. Methods Phys. Res. B",
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1523 optoelectronic device fabrication and characterization
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1540 doi = "10.1109/5.90132",
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1546 author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
1547 Lin and B. Sverdlov and M. Burns",
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1550 ZnSe-based semiconductor device technologies",
1553 journal = "J. Appl. Phys.",
1556 pages = "1363--1398",
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1558 NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
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1563 notes = "sic intro, properties",
1567 author = "Noch Unbekannt",
1568 title = "How to find references",
1569 journal = "Journal of Applied References",
1576 title = "Atomistic simulation of thermomechanical properties of
1578 author = "Meijie Tang and Sidney Yip",
1579 journal = "Phys. Rev. B",
1582 pages = "15150--15159",
1585 doi = "10.1103/PhysRevB.52.15150",
1586 notes = "modified tersoff, scale cutoff with volume, promising
1587 tersoff reparametrization",
1588 publisher = "American Physical Society",
1592 title = "Silicon carbide as a new {MEMS} technology",
1593 journal = "Sensors and Actuators A: Physical",
1599 doi = "DOI: 10.1016/S0924-4247(99)00335-0",
1600 URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
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1604 keywords = "Micromachining",
1605 keywords = "Mechanical stress",
1609 title = "Status of silicon carbide (Si{C}) as a wide-bandgap
1610 semiconductor for high-temperature applications: {A}
1612 journal = "Solid-State Electronics",
1615 pages = "1409--1422",
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1620 author = "J. B. Casady and R. W. Johnson",
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1624 @Article{giancarli98,
1625 title = "Design requirements for Si{C}/Si{C} composites
1626 structural material in fusion power reactor blankets",
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1635 author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
1636 Marois and N. B. Morley and J. F. Salavy",
1640 title = "Electrical and optical characterization of Si{C}",
1641 journal = "Physica B: Condensed Matter",
1647 doi = "DOI: 10.1016/0921-4526(93)90249-6",
1648 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
1649 author = "G. Pensl and W. J. Choyke",
1653 title = "Investigation of growth processes of ingots of silicon
1654 carbide single crystals",
1655 journal = "J. Cryst. Growth",
1660 notes = "modified lely process",
1662 doi = "DOI: 10.1016/0022-0248(78)90169-0",
1663 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
1664 author = "Yu. M. Tairov and V. F. Tsvetkov",
1668 title = "General principles of growing large-size single
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1670 journal = "Journal of Crystal Growth",
1677 doi = "DOI: 10.1016/0022-0248(81)90184-6",
1678 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
1679 author = "Yu.M. Tairov and V. F. Tsvetkov",
1683 title = "Si{C} boule growth by sublimation vapor transport",
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1694 R. H. Hopkins and W. J. Choyke",
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1709 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
1714 title = "Control of polytype formation by surface energy
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1731 author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
1734 title = "Production of large-area single-crystal wafers of
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1738 journal = "Appl. Phys. Lett.",
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1750 author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
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1753 title = "Epitaxial growth and electric characteristics of cubic
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1768 author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
1770 title = "Growth and Characterization of Cubic Si{C}
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1777 pages = "1558--1565",
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1808 title = "Crystal growth of Si{C} by step-controlled epitaxy",
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1824 author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
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1830 journal = "J. Appl. Phys.",
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1837 URL = "http://link.aip.org/link/?JAP/73/726/1",
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1867 title = "Chemical vapor deposition and characterization of
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1887 J. Choyke and J. L. Bradshaw and L. Henderson and M.
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1891 6{H}-Si{C} substrates",
1894 journal = "Appl. Phys. Lett.",
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1909 Rozgonyi and K. L. More",
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1912 interface misfit in beta-Si{C} films on alpha-Si{C}
1916 journal = "Journal of Applied Physics",
1919 pages = "2645--2650",
1920 keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
1921 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
1922 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
1923 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
1924 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
1925 URL = "http://link.aip.org/link/?JAP/63/2645/1",
1926 doi = "10.1063/1.341004",
1930 author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
1931 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
1932 and W. J. Choyke and L. Clemen and M. Yoganathan",
1934 title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
1935 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
1938 journal = "Applied Physics Letters",
1942 keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
1943 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
1944 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
1945 URL = "http://link.aip.org/link/?APL/59/333/1",
1946 doi = "10.1063/1.105587",
1950 author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
1951 Thokala and M. J. Loboda",
1953 title = "Reduced temperature growth of crystalline 3{C}-Si{C}
1954 films on 6{H}-Si{C} by chemical vapor deposition from
1958 journal = "J. Appl. Phys.",
1961 pages = "1271--1273",
1962 keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
1963 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
1965 URL = "http://link.aip.org/link/?JAP/78/1271/1",
1966 doi = "10.1063/1.360368",
1967 notes = "3c-sic on 6h-sic, cvd, reduced temperature",
1971 title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
1972 properties of its p-n junction",
1973 journal = "Journal of Crystal Growth",
1980 doi = "DOI: 10.1016/0022-0248(87)90449-0",
1981 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
1982 author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
1984 notes = "first time ssmbe of 3c-sic on 6h-sic",
1988 title = "Epitaxial growth of Si{C} thin films on Si-stabilized
1989 [alpha]-Si{C}(0001) at low temperatures by solid-source
1990 molecular beam epitaxy",
1991 journal = "J. Cryst. Growth",
1997 doi = "DOI: 10.1016/0022-0248(95)00170-0",
1998 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
1999 author = "A. Fissel and U. Kaiser and E. Ducke and B.
2000 Schr{\"{o}}ter and W. Richter",
2001 notes = "solid source mbe of 3c-sic on si and 6h-sic",
2004 @Article{fissel95_apl,
2005 author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
2007 title = "Low-temperature growth of Si{C} thin films on Si and
2008 6{H}--Si{C} by solid-source molecular beam epitaxy",
2011 journal = "Appl. Phys. Lett.",
2014 pages = "3182--3184",
2015 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2017 URL = "http://link.aip.org/link/?APL/66/3182/1",
2018 doi = "10.1063/1.113716",
2019 notes = "mbe 3c-sic on si and 6h-sic",
2023 author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
2024 Bernd Schr{\"{o}}ter and Wolfgang Richter",
2026 title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
2027 migration enhanced epitaxy controlled to an atomic
2028 level using surface superstructures",
2031 journal = "Applied Physics Letters",
2034 pages = "1204--1206",
2035 keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
2036 NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
2038 URL = "http://link.aip.org/link/?APL/68/1204/1",
2039 doi = "10.1063/1.115969",
2040 notes = "ss mbe sic, superstructure, reconstruction",
2044 title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
2045 author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
2046 C. M. Bertoni and A. Catellani",
2047 journal = "Phys. Rev. Lett.",
2054 doi = "10.1103/PhysRevLett.91.136101",
2055 publisher = "American Physical Society",
2056 notes = "dft calculations mbe sic growth",
2060 author = "J. A. Borders and S. T. Picraux and W. Beezhold",
2062 title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
2066 journal = "Appl. Phys. Lett.",
2070 URL = "http://link.aip.org/link/?APL/18/509/1",
2071 doi = "10.1063/1.1653516",
2072 notes = "first time sic by ibs, follow cites for precipitation
2077 author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
2078 and E. V. Lubopytova",
2079 title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
2080 by ion implantation",
2081 publisher = "Taylor \& Francis",
2083 journal = "Radiation Effects",
2087 URL = "http://www.informaworld.com/10.1080/00337577608233477",
2088 notes = "3c-sic for different temperatures, amorphous, poly,
2089 single crystalline",
2092 @Article{akimchenko80,
2093 author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
2094 Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
2095 title = "Structure and optical properties of silicon implanted
2096 by high doses of 70 and 310 ke{V} carbon ions",
2097 publisher = "Taylor \& Francis",
2099 journal = "Radiation Effects",
2103 URL = "http://www.informaworld.com/10.1080/00337578008209220",
2104 notes = "3c-sic nucleation by thermal spikes",
2108 title = "Structure and annealing properties of silicon carbide
2109 thin layers formed by implantation of carbon ions in
2111 journal = "Thin Solid Films",
2118 doi = "DOI: 10.1016/0040-6090(81)90516-2",
2119 URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
2120 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2125 title = "Characteristics of the synthesis of [beta]-Si{C} by
2126 the implantation of carbon ions into silicon",
2127 journal = "Thin Solid Films",
2134 doi = "DOI: 10.1016/0040-6090(82)90295-4",
2135 URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
2136 author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
2141 author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
2142 C. D. Meekison and C. Marsh and G. R. Booker and R. J.
2143 Chater and J. A. Iulner and J. Davis",
2144 title = "Formation mechanisms and structures of insulating
2145 compounds formed in silicon by ion beam synthesis",
2146 publisher = "Taylor \& Francis",
2148 journal = "Radiation Effects",
2152 URL = "http://www.informaworld.com/10.1080/00337578608209614",
2153 notes = "ibs, comparison with sio and sin, higher temp or
2158 author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
2159 J. Davis and G. E. Celler",
2161 title = "Formation of buried layers of beta-Si{C} using ion
2162 beam synthesis and incoherent lamp annealing",
2165 journal = "Appl. Phys. Lett.",
2168 pages = "2242--2244",
2169 keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
2170 IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
2171 URL = "http://link.aip.org/link/?APL/51/2242/1",
2172 doi = "10.1063/1.98953",
2173 notes = "nice tem images, sic by ibs",
2177 author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
2178 and M. Olivier and A. M. Papon and G. Rolland",
2180 title = "High-temperature ion beam synthesis of cubic Si{C}",
2183 journal = "Journal of Applied Physics",
2186 pages = "2908--2912",
2187 keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
2188 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
2189 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
2190 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
2191 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
2192 REACTIONS; MONOCRYSTALS",
2193 URL = "http://link.aip.org/link/?JAP/67/2908/1",
2194 doi = "10.1063/1.346092",
2195 notes = "triple energy implantation to overcome high annealing
2200 author = "R. I. Scace and G. A. Slack",
2202 title = "Solubility of Carbon in Silicon and Germanium",
2205 journal = "J. Chem. Phys.",
2208 pages = "1551--1555",
2209 URL = "http://link.aip.org/link/?JCP/30/1551/1",
2210 doi = "10.1063/1.1730236",
2211 notes = "solubility of c in c-si, si-c phase diagram",
2215 author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
2216 F. W. Saris and W. Vandervorst",
2218 title = "Role of {C} and {B} clusters in transient diffusion of
2222 journal = "Appl. Phys. Lett.",
2225 pages = "1150--1152",
2226 keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
2227 DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
2229 URL = "http://link.aip.org/link/?APL/68/1150/1",
2230 doi = "10.1063/1.115706",
2231 notes = "suppression of transient enhanced diffusion (ted)",
2235 title = "Implantation and transient boron diffusion: the role
2236 of the silicon self-interstitial",
2237 journal = "Nucl. Instrum. Methods Phys. Res. B",
2242 note = "Selected Papers of the Tenth International Conference
2243 on Ion Implantation Technology (IIT '94)",
2245 doi = "DOI: 10.1016/0168-583X(94)00481-1",
2246 URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
2247 author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
2252 author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
2253 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
2254 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
2257 title = "Physical mechanisms of transient enhanced dopant
2258 diffusion in ion-implanted silicon",
2261 journal = "J. Appl. Phys.",
2264 pages = "6031--6050",
2265 URL = "http://link.aip.org/link/?JAP/81/6031/1",
2266 doi = "10.1063/1.364452",
2267 notes = "ted, transient enhanced diffusion, c silicon trap",
2271 author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
2273 title = "Formation of beta-Si{C} nanocrystals by the relaxation
2274 of Si[sub 1 - y]{C}[sub y] random alloy layers",
2277 journal = "Appl. Phys. Lett.",
2281 keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
2282 EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
2283 TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
2285 URL = "http://link.aip.org/link/?APL/64/324/1",
2286 doi = "10.1063/1.111195",
2287 notes = "beta sic nano crystals in si, mbe, annealing",
2291 author = "Richard A. Soref",
2293 title = "Optical band gap of the ternary semiconductor Si[sub 1
2294 - x - y]Ge[sub x]{C}[sub y]",
2297 journal = "J. Appl. Phys.",
2300 pages = "2470--2472",
2301 keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
2302 OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
2304 URL = "http://link.aip.org/link/?JAP/70/2470/1",
2305 doi = "10.1063/1.349403",
2306 notes = "band gap of strained si by c",
2310 author = "E Kasper",
2311 title = "Superlattices of group {IV} elements, a new
2312 possibility to produce direct band gap material",
2313 journal = "Physica Scripta",
2316 URL = "http://stacks.iop.org/1402-4896/T35/232",
2318 notes = "superlattices, convert indirect band gap into a
2323 author = "H. J. Osten and J. Griesche and S. Scalese",
2325 title = "Substitutional carbon incorporation in epitaxial
2326 Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
2327 molecular beam epitaxy",
2330 journal = "Appl. Phys. Lett.",
2334 keywords = "molecular beam epitaxial growth; semiconductor growth;
2335 wide band gap semiconductors; interstitials; silicon
2337 URL = "http://link.aip.org/link/?APL/74/836/1",
2338 doi = "10.1063/1.123384",
2339 notes = "substitutional c in si",
2342 @Article{hohenberg64,
2343 title = "Inhomogeneous Electron Gas",
2344 author = "P. Hohenberg and W. Kohn",
2345 journal = "Phys. Rev.",
2348 pages = "B864--B871",
2352 doi = "10.1103/PhysRev.136.B864",
2353 publisher = "American Physical Society",
2354 notes = "density functional theory, dft",
2358 title = "Self-Consistent Equations Including Exchange and
2359 Correlation Effects",
2360 author = "W. Kohn and L. J. Sham",
2361 journal = "Phys. Rev.",
2364 pages = "A1133--A1138",
2368 doi = "10.1103/PhysRev.140.A1133",
2369 publisher = "American Physical Society",
2370 notes = "dft, exchange and correlation",
2374 title = "Strain-stabilized highly concentrated pseudomorphic
2375 $Si1-x$$Cx$ layers in Si",
2376 author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
2378 journal = "Phys. Rev. Lett.",
2381 pages = "3578--3581",
2385 doi = "10.1103/PhysRevLett.72.3578",
2386 publisher = "American Physical Society",
2387 notes = "high c concentration in si, heterostructure, strained
2392 title = "Electron Transport Model for Strained Silicon-Carbon
2394 author = "Shu-Tong Chang and Chung-Yi Lin",
2395 journal = "Japanese J. Appl. Phys.",
2398 pages = "2257--2262",
2401 URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
2402 doi = "10.1143/JJAP.44.2257",
2403 publisher = "The Japan Society of Applied Physics",
2404 notes = "enhance of electron mobility in starined si",
2408 author = "H. J. Osten and P. Gaworzewski",
2410 title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
2411 and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
2415 journal = "J. Appl. Phys.",
2418 pages = "4977--4981",
2419 keywords = "silicon compounds; Ge-Si alloys; wide band gap
2420 semiconductors; semiconductor epitaxial layers; carrier
2421 density; Hall mobility; interstitials; defect states",
2422 URL = "http://link.aip.org/link/?JAP/82/4977/1",
2423 doi = "10.1063/1.366364",
2424 notes = "charge transport in strained si",
2428 title = "Carbon-mediated aggregation of self-interstitials in
2429 silicon: {A} large-scale molecular dynamics study",
2430 author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
2431 journal = "Phys. Rev. B",
2438 doi = "10.1103/PhysRevB.69.155214",
2439 publisher = "American Physical Society",
2440 notes = "simulation using promising tersoff reparametrization",
2444 title = "Event-Based Relaxation of Continuous Disordered
2446 author = "G. T. Barkema and Normand Mousseau",
2447 journal = "Phys. Rev. Lett.",
2450 pages = "4358--4361",
2454 doi = "10.1103/PhysRevLett.77.4358",
2455 publisher = "American Physical Society",
2456 notes = "activation relaxation technique, art, speed up slow
2461 author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
2462 Minoukadeh and F. Willaime",
2464 title = "Some improvements of the activation-relaxation
2465 technique method for finding transition pathways on
2466 potential energy surfaces",
2469 journal = "J. Chem. Phys.",
2475 keywords = "eigenvalues and eigenfunctions; iron; potential energy
2476 surfaces; vacancies (crystal)",
2477 URL = "http://link.aip.org/link/?JCP/130/114711/1",
2478 doi = "10.1063/1.3088532",
2479 notes = "improvements to art, refs for methods to find
2480 transition pathways",
2483 @Article{parrinello81,
2484 author = "M. Parrinello and A. Rahman",
2486 title = "Polymorphic transitions in single crystals: {A} new
2487 molecular dynamics method",
2490 journal = "J. Appl. Phys.",
2493 pages = "7182--7190",
2494 keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
2495 MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
2496 CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
2497 COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
2498 EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
2500 URL = "http://link.aip.org/link/?JAP/52/7182/1",
2501 doi = "10.1063/1.328693",
2504 @Article{stillinger85,
2505 title = "Computer simulation of local order in condensed phases
2507 author = "Frank H. Stillinger and Thomas A. Weber",
2508 journal = "Phys. Rev. B",
2511 pages = "5262--5271",
2515 doi = "10.1103/PhysRevB.31.5262",
2516 publisher = "American Physical Society",
2520 title = "Empirical potential for hydrocarbons for use in
2521 simulating the chemical vapor deposition of diamond
2523 author = "Donald W. Brenner",
2524 journal = "Phys. Rev. B",
2527 pages = "9458--9471",
2531 doi = "10.1103/PhysRevB.42.9458",
2532 publisher = "American Physical Society",
2533 notes = "brenner hydro carbons",
2537 title = "Modeling of Covalent Bonding in Solids by Inversion of
2538 Cohesive Energy Curves",
2539 author = "Martin Z. Bazant and Efthimios Kaxiras",
2540 journal = "Phys. Rev. Lett.",
2543 pages = "4370--4373",
2547 doi = "10.1103/PhysRevLett.77.4370",
2548 publisher = "American Physical Society",
2549 notes = "first si edip",
2553 title = "Environment-dependent interatomic potential for bulk
2555 author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
2557 journal = "Phys. Rev. B",
2560 pages = "8542--8552",
2564 doi = "10.1103/PhysRevB.56.8542",
2565 publisher = "American Physical Society",
2566 notes = "second si edip",
2570 title = "Interatomic potential for silicon defects and
2572 author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
2573 Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
2574 journal = "Phys. Rev. B",
2577 pages = "2539--2550",
2581 doi = "10.1103/PhysRevB.58.2539",
2582 publisher = "American Physical Society",
2583 notes = "latest si edip, good dislocation explanation",
2587 title = "{PARCAS} molecular dynamics code",
2588 author = "K. Nordlund",
2593 title = "Hyperdynamics: Accelerated Molecular Dynamics of
2595 author = "Arthur F. Voter",
2596 journal = "Phys. Rev. Lett.",
2599 pages = "3908--3911",
2603 doi = "10.1103/PhysRevLett.78.3908",
2604 publisher = "American Physical Society",
2605 notes = "hyperdynamics, accelerated md",
2609 author = "Arthur F. Voter",
2611 title = "A method for accelerating the molecular dynamics
2612 simulation of infrequent events",
2615 journal = "J. Chem. Phys.",
2618 pages = "4665--4677",
2619 keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
2620 TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
2621 SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
2622 energy functions; surface diffusion; reaction kinetics
2623 theory; potential energy surfaces",
2624 URL = "http://link.aip.org/link/?JCP/106/4665/1",
2625 doi = "10.1063/1.473503",
2626 notes = "improved hyperdynamics md",
2629 @Article{sorensen2000,
2630 author = "Mads R. S{\o }rensen and Arthur F. Voter",
2632 title = "Temperature-accelerated dynamics for simulation of
2636 journal = "J. Chem. Phys.",
2639 pages = "9599--9606",
2640 keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
2641 MOLECULAR DYNAMICS METHOD; surface diffusion",
2642 URL = "http://link.aip.org/link/?JCP/112/9599/1",
2643 doi = "10.1063/1.481576",
2644 notes = "temperature accelerated dynamics, tad",
2648 title = "Parallel replica method for dynamics of infrequent
2650 author = "Arthur F. Voter",
2651 journal = "Phys. Rev. B",
2654 pages = "R13985--R13988",
2658 doi = "10.1103/PhysRevB.57.R13985",
2659 publisher = "American Physical Society",
2660 notes = "parallel replica method, accelerated md",
2664 author = "Xiongwu Wu and Shaomeng Wang",
2666 title = "Enhancing systematic motion in molecular dynamics
2670 journal = "J. Chem. Phys.",
2673 pages = "9401--9410",
2674 keywords = "molecular dynamics method; argon; Lennard-Jones
2675 potential; crystallisation; liquid theory",
2676 URL = "http://link.aip.org/link/?JCP/110/9401/1",
2677 doi = "10.1063/1.478948",
2678 notes = "self guided md, sgmd, accelerated md, enhancing
2682 @Article{choudhary05,
2683 author = "Devashish Choudhary and Paulette Clancy",
2685 title = "Application of accelerated molecular dynamics schemes
2686 to the production of amorphous silicon",
2689 journal = "J. Chem. Phys.",
2695 keywords = "molecular dynamics method; silicon; glass structure;
2696 amorphous semiconductors",
2697 URL = "http://link.aip.org/link/?JCP/122/154509/1",
2698 doi = "10.1063/1.1878733",
2699 notes = "explanation of sgmd and hyper md, applied to amorphous
2704 author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
2706 title = "Carbon precipitation in silicon: Why is it so
2710 journal = "Appl. Phys. Lett.",
2713 pages = "3336--3338",
2714 keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
2715 MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
2717 URL = "http://link.aip.org/link/?APL/62/3336/1",
2718 doi = "10.1063/1.109063",
2719 notes = "interfacial energy of cubic sic and si, si self
2720 interstitials necessary for precipitation, volume
2721 decrease, high interface energy",
2724 @Article{chaussende08,
2725 title = "Prospects for 3{C}-Si{C} bulk crystal growth",
2726 journal = "J. Cryst. Growth",
2731 note = "Proceedings of the E-MRS Conference, Symposium G -
2732 Substrates of Wide Bandgap Materials",
2734 doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
2735 URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
2736 author = "D. Chaussende and F. Mercier and A. Boulle and F.
2737 Conchon and M. Soueidan and G. Ferro and A. Mantzari
2738 and A. Andreadou and E. K. Polychroniadis and C.
2739 Balloud and S. Juillaguet and J. Camassel and M. Pons",
2740 notes = "3c-sic crystal growth, sic fabrication + links,
2744 @Article{chaussende07,
2745 author = "D. Chaussende and P. J. Wellmann and M. Pons",
2746 title = "Status of Si{C} bulk growth processes",
2747 journal = "Journal of Physics D: Applied Physics",
2751 URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
2753 notes = "review of sic single crystal growth methods, process
2758 title = "Forces in Molecules",
2759 author = "R. P. Feynman",
2760 journal = "Phys. Rev.",
2767 doi = "10.1103/PhysRev.56.340",
2768 publisher = "American Physical Society",
2769 notes = "hellmann feynman forces",
2773 title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
2774 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
2775 their Contrasting Properties",
2776 author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
2778 journal = "Phys. Rev. Lett.",
2785 doi = "10.1103/PhysRevLett.84.943",
2786 publisher = "American Physical Society",
2787 notes = "si sio2 and sic sio2 interface",
2790 @Article{djurabekova08,
2791 title = "Atomistic simulation of the interface structure of Si
2792 nanocrystals embedded in amorphous silica",
2793 author = "Flyura Djurabekova and Kai Nordlund",
2794 journal = "Phys. Rev. B",
2801 doi = "10.1103/PhysRevB.77.115325",
2802 publisher = "American Physical Society",
2803 notes = "nc-si in sio2, interface energy, nc construction,
2804 angular distribution, coordination",
2808 author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
2809 W. Liang and J. Zou",
2811 title = "Nature of interfacial defects and their roles in
2812 strain relaxation at highly lattice mismatched
2813 3{C}-Si{C}/Si (001) interface",
2816 journal = "J. Appl. Phys.",
2822 keywords = "anelastic relaxation; crystal structure; dislocations;
2823 elemental semiconductors; semiconductor growth;
2824 semiconductor thin films; silicon; silicon compounds;
2825 stacking faults; wide band gap semiconductors",
2826 URL = "http://link.aip.org/link/?JAP/106/073522/1",
2827 doi = "10.1063/1.3234380",
2828 notes = "sic/si interface, follow refs, tem image
2829 deconvolution, dislocation defects",
2832 @Article{kitabatake93,
2833 author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
2836 title = "Simulations and experiments of Si{C} heteroepitaxial
2837 growth on Si(001) surface",
2840 journal = "J. Appl. Phys.",
2843 pages = "4438--4445",
2844 keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
2845 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
2846 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
2847 URL = "http://link.aip.org/link/?JAP/74/4438/1",
2848 doi = "10.1063/1.354385",
2849 notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
2853 @Article{kitabatake97,
2854 author = "Makoto Kitabatake",
2855 title = "Simulations and Experiments of 3{C}-Si{C}/Si
2856 Heteroepitaxial Growth",
2857 publisher = "WILEY-VCH Verlag",
2859 journal = "physica status solidi (b)",
2862 URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2863 doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
2864 notes = "3c-sic heteroepitaxial growth on si off-axis model",
2868 title = "Strain relaxation and thermal stability of the
2869 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
2871 journal = "Thin Solid Films",
2878 doi = "DOI: 10.1016/S0040-6090(96)09257-7",
2879 URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
2880 author = "V. Chirita and L. Hultman and L. R. Wallenberg",
2881 keywords = "Strain relaxation",
2882 keywords = "Interfaces",
2883 keywords = "Thermal stability",
2884 keywords = "Molecular dynamics",
2885 notes = "tersoff sic/si interface study",
2889 title = "Ab initio Study of Misfit Dislocations at the
2890 $Si{C}/Si(001)$ Interface",
2891 author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
2893 journal = "Phys. Rev. Lett.",
2900 doi = "10.1103/PhysRevLett.89.156101",
2901 publisher = "American Physical Society",
2902 notes = "sic/si interface study",
2905 @Article{pizzagalli03,
2906 title = "Theoretical investigations of a highly mismatched
2907 interface: Si{C}/Si(001)",
2908 author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
2910 journal = "Phys. Rev. B",
2917 doi = "10.1103/PhysRevB.68.195302",
2918 publisher = "American Physical Society",
2919 notes = "tersoff md and ab initio sic/si interface study",
2923 title = "Atomic configurations of dislocation core and twin
2924 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
2925 electron microscopy",
2926 author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
2927 H. Zheng and J. W. Liang",
2928 journal = "Phys. Rev. B",
2935 doi = "10.1103/PhysRevB.75.184103",
2936 publisher = "American Physical Society",
2937 notes = "hrem image deconvolution on 3c-sic on si, distinguish
2941 @Article{hornstra58,
2942 title = "Dislocations in the diamond lattice",
2943 journal = "Journal of Physics and Chemistry of Solids",
2950 doi = "DOI: 10.1016/0022-3697(58)90138-0",
2951 URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
2952 author = "J. Hornstra",
2953 notes = "dislocations in diamond lattice",
2957 title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
2958 Ion `Hot' Implantation",
2959 author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
2960 Hirao and Naoki Arai and Tomio Izumi",
2961 journal = "Japanese J. Appl. Phys.",
2963 number = "Part 1, No. 2A",
2967 URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
2968 doi = "10.1143/JJAP.31.343",
2969 publisher = "The Japan Society of Applied Physics",
2970 notes = "c-c bonds in c implanted si, hot implantation
2971 efficiency, c-c hard to break by thermal annealing",
2974 @Article{eichhorn99,
2975 author = "F. Eichhorn and N. Schell and W. Matz and R.
2978 title = "Strain and Si{C} particle formation in silicon
2979 implanted with carbon ions of medium fluence studied by
2980 synchrotron x-ray diffraction",
2983 journal = "J. Appl. Phys.",
2986 pages = "4184--4187",
2987 keywords = "silicon; carbon; elemental semiconductors; chemical
2988 interdiffusion; ion implantation; X-ray diffraction;
2989 precipitation; semiconductor doping",
2990 URL = "http://link.aip.org/link/?JAP/86/4184/1",
2991 doi = "10.1063/1.371344",
2992 notes = "sic conversion by ibs, detected substitutional carbon,
2993 expansion of si lattice",
2996 @Article{eichhorn02,
2997 author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
2998 Metzger and W. Matz and R. K{\"{o}}gler",
3000 title = "Structural relation between Si and Si{C} formed by
3001 carbon ion implantation",
3004 journal = "J. Appl. Phys.",
3007 pages = "1287--1292",
3008 keywords = "silicon compounds; wide band gap semiconductors; ion
3009 implantation; annealing; X-ray scattering; transmission
3010 electron microscopy",
3011 URL = "http://link.aip.org/link/?JAP/91/1287/1",
3012 doi = "10.1063/1.1428105",
3013 notes = "3c-sic alignement to si host in ibs depending on
3014 temperature, might explain c into c sub trafo",
3018 author = "G Lucas and M Bertolus and L Pizzagalli",
3019 title = "An environment-dependent interatomic potential for
3020 silicon carbide: calculation of bulk properties,
3021 high-pressure phases, point and extended defects, and
3022 amorphous structures",
3023 journal = "J. Phys.: Condens. Matter",
3027 URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
3033 author = "J Godet and L Pizzagalli and S Brochard and P
3035 title = "Comparison between classical potentials and ab initio
3036 methods for silicon under large shear",
3037 journal = "J. Phys.: Condens. Matter",
3041 URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
3043 notes = "comparison of empirical potentials, stillinger weber,
3044 edip, tersoff, ab initio",
3047 @Article{moriguchi98,
3048 title = "Verification of Tersoff's Potential for Static
3049 Structural Analysis of Solids of Group-{IV} Elements",
3050 author = "Koji Moriguchi and Akira Shintani",
3051 journal = "Japanese J. Appl. Phys.",
3053 number = "Part 1, No. 2",
3057 URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
3058 doi = "10.1143/JJAP.37.414",
3059 publisher = "The Japan Society of Applied Physics",
3060 notes = "tersoff stringent test",
3063 @Article{mazzarolo01,
3064 title = "Low-energy recoils in crystalline silicon: Quantum
3066 author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
3067 Lulli and Eros Albertazzi",
3068 journal = "Phys. Rev. B",
3075 doi = "10.1103/PhysRevB.63.195207",
3076 publisher = "American Physical Society",
3079 @Article{holmstroem08,
3080 title = "Threshold defect production in silicon determined by
3081 density functional theory molecular dynamics
3083 author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
3084 journal = "Phys. Rev. B",
3091 doi = "10.1103/PhysRevB.78.045202",
3092 publisher = "American Physical Society",
3093 notes = "threshold displacement comparison empirical and ab
3097 @Article{nordlund97,
3098 title = "Repulsive interatomic potentials calculated using
3099 Hartree-Fock and density-functional theory methods",
3100 journal = "Nucl. Instrum. Methods Phys. Res. B",
3107 doi = "DOI: 10.1016/S0168-583X(97)00447-3",
3108 URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
3109 author = "K. Nordlund and N. Runeberg and D. Sundholm",
3110 notes = "repulsive ab initio potential",
3114 title = "Efficiency of ab-initio total energy calculations for
3115 metals and semiconductors using a plane-wave basis
3117 journal = "Comput. Mater. Sci.",
3124 doi = "DOI: 10.1016/0927-0256(96)00008-0",
3125 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
3126 author = "G. Kresse and J. Furthm{\"{u}}ller",
3131 title = "Projector augmented-wave method",
3132 author = "P. E. Bl{\"o}chl",
3133 journal = "Phys. Rev. B",
3136 pages = "17953--17979",
3140 doi = "10.1103/PhysRevB.50.17953",
3141 publisher = "American Physical Society",
3142 notes = "paw method",
3146 title = "Norm-Conserving Pseudopotentials",
3147 author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
3148 journal = "Phys. Rev. Lett.",
3151 pages = "1494--1497",
3155 doi = "10.1103/PhysRevLett.43.1494",
3156 publisher = "American Physical Society",
3157 notes = "norm-conserving pseudopotentials",
3160 @Article{vanderbilt90,
3161 title = "Soft self-consistent pseudopotentials in a generalized
3162 eigenvalue formalism",
3163 author = "David Vanderbilt",
3164 journal = "Phys. Rev. B",
3167 pages = "7892--7895",
3171 doi = "10.1103/PhysRevB.41.7892",
3172 publisher = "American Physical Society",
3173 notes = "vasp pseudopotentials",
3177 title = "Accurate and simple density functional for the
3178 electronic exchange energy: Generalized gradient
3180 author = "John P. Perdew and Yue Wang",
3181 journal = "Phys. Rev. B",
3184 pages = "8800--8802",
3188 doi = "10.1103/PhysRevB.33.8800",
3189 publisher = "American Physical Society",
3190 notes = "rapid communication gga",
3194 title = "Generalized gradient approximations for exchange and
3195 correlation: {A} look backward and forward",
3196 journal = "Physica B: Condensed Matter",
3203 doi = "DOI: 10.1016/0921-4526(91)90409-8",
3204 URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
3205 author = "John P. Perdew",
3206 notes = "gga overview",
3210 title = "Atoms, molecules, solids, and surfaces: Applications
3211 of the generalized gradient approximation for exchange
3213 author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
3214 Koblar A. Jackson and Mark R. Pederson and D. J. Singh
3215 and Carlos Fiolhais",
3216 journal = "Phys. Rev. B",
3219 pages = "6671--6687",
3223 doi = "10.1103/PhysRevB.46.6671",
3224 publisher = "American Physical Society",
3225 notes = "gga pw91 (as in vasp)",
3228 @Article{baldereschi73,
3229 title = "Mean-Value Point in the Brillouin Zone",
3230 author = "A. Baldereschi",
3231 journal = "Phys. Rev. B",
3234 pages = "5212--5215",
3238 doi = "10.1103/PhysRevB.7.5212",
3239 publisher = "American Physical Society",
3240 notes = "mean value k point",
3244 title = "Ab initio pseudopotential calculations of dopant
3246 journal = "Comput. Mater. Sci.",
3253 doi = "DOI: 10.1016/S0927-0256(98)00023-8",
3254 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
3255 author = "Jing Zhu",
3256 keywords = "TED (transient enhanced diffusion)",
3257 keywords = "Boron dopant",
3258 keywords = "Carbon dopant",
3259 keywords = "Defect",
3260 keywords = "ab initio pseudopotential method",
3261 keywords = "Impurity cluster",
3262 notes = "binding of c to si interstitial, c in si defects",
3266 author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
3268 title = "Si{C} buried layer formation by ion beam synthesis at
3272 journal = "Appl. Phys. Lett.",
3275 pages = "2646--2648",
3276 keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
3277 CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
3278 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
3279 ELECTRON MICROSCOPY",
3280 URL = "http://link.aip.org/link/?APL/66/2646/1",
3281 doi = "10.1063/1.113112",
3282 notes = "precipitation mechanism by substitutional carbon, si
3283 self interstitials react with further implanted c",
3287 author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
3288 Kolodzey and A. Hairie",
3290 title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
3294 journal = "J. Appl. Phys.",
3297 pages = "4631--4633",
3298 keywords = "silicon compounds; precipitation; localised modes;
3299 semiconductor epitaxial layers; infrared spectra;
3300 Fourier transform spectra; thermal stability;
3302 URL = "http://link.aip.org/link/?JAP/84/4631/1",
3303 doi = "10.1063/1.368703",
3304 notes = "coherent 3C-SiC, topotactic, critical coherence size",
3308 author = "R Jones and B J Coomer and P R Briddon",
3309 title = "Quantum mechanical modelling of defects in
3311 journal = "J. Phys.: Condens. Matter",
3315 URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
3317 notes = "ab inito dft intro, vibrational modes, c defect in
3322 author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
3323 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
3324 J. E. Greene and S. G. Bishop",
3326 title = "Carbon incorporation pathways and lattice sites in
3327 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
3328 molecular-beam epitaxy",
3331 journal = "J. Appl. Phys.",
3334 pages = "5716--5727",
3335 URL = "http://link.aip.org/link/?JAP/91/5716/1",
3336 doi = "10.1063/1.1465122",
3337 notes = "c substitutional incorporation pathway, dft and expt",
3341 title = "Dynamic properties of interstitial carbon and
3342 carbon-carbon pair defects in silicon",
3343 author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
3345 journal = "Phys. Rev. B",
3348 pages = "2188--2194",
3352 doi = "10.1103/PhysRevB.55.2188",
3353 publisher = "American Physical Society",
3354 notes = "ab initio c in si and di-carbon defect, no formation
3355 energies, different migration barriers and paths",
3359 title = "Interstitial carbon and the carbon-carbon pair in
3360 silicon: Semiempirical electronic-structure
3362 author = "Matthew J. Burnard and Gary G. DeLeo",
3363 journal = "Phys. Rev. B",
3366 pages = "10217--10225",
3370 doi = "10.1103/PhysRevB.47.10217",
3371 publisher = "American Physical Society",
3372 notes = "semi empirical mndo, pm3 and mindo3 c in si and di
3373 carbon defect, formation energies",
3377 title = "Electronic structure of interstitial carbon in
3379 author = "Morgan Besson and Gary G. DeLeo",
3380 journal = "Phys. Rev. B",
3383 pages = "4028--4033",
3387 doi = "10.1103/PhysRevB.43.4028",
3388 publisher = "American Physical Society",
3392 title = "Review of atomistic simulations of surface diffusion
3393 and growth on semiconductors",
3394 journal = "Comput. Mater. Sci.",
3399 note = "Proceedings of the Workshop on Virtual Molecular Beam
3402 doi = "DOI: 10.1016/0927-0256(96)00030-4",
3403 URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
3404 author = "Efthimios Kaxiras",
3405 notes = "might contain c 100 db formation energy, overview md,
3406 tight binding, first principles",
3409 @Article{kaukonen98,
3410 title = "Effect of {N} and {B} doping on the growth of {CVD}
3412 $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
3414 author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
3415 M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
3417 journal = "Phys. Rev. B",
3420 pages = "9965--9970",
3424 doi = "10.1103/PhysRevB.57.9965",
3425 publisher = "American Physical Society",
3426 notes = "constrained conjugate gradient relaxation technique
3431 title = "Correlation between the antisite pair and the ${DI}$
3433 author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
3434 I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
3436 journal = "Phys. Rev. B",
3443 doi = "10.1103/PhysRevB.67.155203",
3444 publisher = "American Physical Society",
3448 title = "Production and recovery of defects in Si{C} after
3449 irradiation and deformation",
3450 journal = "J. Nucl. Mater.",
3453 pages = "1803--1808",
3457 doi = "DOI: 10.1016/S0022-3115(98)00139-1",
3458 URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
3459 author = "J. Chen and P. Jung and H. Klein",
3463 title = "Accumulation, dynamic annealing and thermal recovery
3464 of ion-beam-induced disorder in silicon carbide",
3465 journal = "Nucl. Instrum. Methods Phys. Res. B",
3472 doi = "DOI: 10.1016/S0168-583X(00)00542-5",
3473 URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
3474 author = "W. J. Weber and W. Jiang and S. Thevuthasan",
3477 @Article{bockstedte03,
3478 title = "Ab initio study of the migration of intrinsic defects
3480 author = "Michel Bockstedte and Alexander Mattausch and Oleg
3482 journal = "Phys. Rev. B",
3489 doi = "10.1103/PhysRevB.68.205201",
3490 publisher = "American Physical Society",
3491 notes = "defect migration in sic",
3495 title = "Theoretical study of vacancy diffusion and
3496 vacancy-assisted clustering of antisites in Si{C}",
3497 author = "E. Rauls and Th. Frauenheim and A. Gali and P.
3499 journal = "Phys. Rev. B",
3506 doi = "10.1103/PhysRevB.68.155208",
3507 publisher = "American Physical Society",
3511 journal = "Telegrafiya i Telefoniya bez Provodov",
3515 author = "O. V. Lossev",
3519 title = "Luminous carborundum detector and detection effect and
3520 oscillations with crystals",
3521 journal = "Philosophical Magazine Series 7",
3524 pages = "1024--1044",
3526 URL = "http://www.informaworld.com/10.1080/14786441108564683",
3527 author = "O. V. Lossev",
3531 journal = "Physik. Zeitschr.",
3535 author = "O. V. Lossev",
3539 journal = "Physik. Zeitschr.",
3543 author = "O. V. Lossev",
3547 journal = "Physik. Zeitschr.",
3551 author = "O. V. Lossev",
3555 title = "A note on carborundum",
3556 journal = "Electrical World",
3560 author = "H. J. Round",
3563 @Article{vashishath08,
3564 title = "Recent trends in silicon carbide device research",
3565 journal = "Mj. Int. J. Sci. Tech.",
3570 author = "Munish Vashishath and Ashoke K. Chatterjee",
3571 URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
3572 notes = "sic polytype electronic properties",
3576 author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
3578 title = "Growth and Properties of beta-Si{C} Single Crystals",
3581 journal = "Journal of Applied Physics",
3585 URL = "http://link.aip.org/link/?JAP/37/333/1",
3586 doi = "10.1063/1.1707837",
3587 notes = "sic melt growth",
3591 author = "A. E. van Arkel and J. H. de Boer",
3592 title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
3594 publisher = "WILEY-VCH Verlag GmbH",
3596 journal = "Z. Anorg. Chem.",
3599 URL = "http://dx.doi.org/10.1002/zaac.19251480133",
3600 doi = "10.1002/zaac.19251480133",
3601 notes = "van arkel apparatus",
3605 author = "K. Moers",
3607 journal = "Z. Anorg. Chem.",
3610 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3615 author = "J. T. Kendall",
3616 title = "Electronic Conduction in Silicon Carbide",
3619 journal = "The Journal of Chemical Physics",
3623 URL = "http://link.aip.org/link/?JCP/21/821/1",
3624 notes = "sic by van arkel apparatus, pyrolitical vapor growth
3629 author = "J. A. Lely",
3631 journal = "Ber. Deut. Keram. Ges.",
3634 notes = "lely sublimation growth process",
3637 @Article{knippenberg63,
3638 author = "W. F. Knippenberg",
3640 journal = "Philips Res. Repts.",
3643 notes = "acheson process",
3646 @Article{hoffmann82,
3647 author = "L. Hoffmann and G. Ziegler and D. Theis and C.
3650 title = "Silicon carbide blue light emitting diodes with
3651 improved external quantum efficiency",
3654 journal = "Journal of Applied Physics",
3657 pages = "6962--6967",
3658 keywords = "light emitting diodes; silicon carbides; quantum
3659 efficiency; visible radiation; experimental data;
3660 epitaxy; fabrication; medium temperature; layers;
3661 aluminium; nitrogen; substrates; pn junctions;
3662 electroluminescence; spectra; current density;
3664 URL = "http://link.aip.org/link/?JAP/53/6962/1",
3665 doi = "10.1063/1.330041",
3666 notes = "blue led, sublimation process",
3670 author = "Philip Neudeck",
3671 affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
3672 Road 44135 Cleveland OH",
3673 title = "Progress in silicon carbide semiconductor electronics
3675 journal = "Journal of Electronic Materials",
3676 publisher = "Springer Boston",
3678 keyword = "Chemistry and Materials Science",
3682 URL = "http://dx.doi.org/10.1007/BF02659688",
3683 note = "10.1007/BF02659688",
3685 notes = "sic data, advantages of 3c sic",
3688 @Article{bhatnagar93,
3689 author = "M. Bhatnagar and B. J. Baliga",
3690 journal = "Electron Devices, IEEE Transactions on",
3691 title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
3698 keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
3699 rectifiers;Si;SiC;breakdown voltages;drift region
3700 properties;output characteristics;power MOSFETs;power
3701 semiconductor devices;switching characteristics;thermal
3702 analysis;Schottky-barrier diodes;electric breakdown of
3703 solids;insulated gate field effect transistors;power
3704 transistors;semiconductor materials;silicon;silicon
3705 compounds;solid-state rectifiers;thermal analysis;",
3706 doi = "10.1109/16.199372",
3708 notes = "comparison 3c 6h sic and si devices",
3712 author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
3713 A. Powell and C. S. Salupo and L. G. Matus",
3714 journal = "Electron Devices, IEEE Transactions on",
3715 title = "Electrical properties of epitaxial 3{C}- and
3716 6{H}-Si{C} p-n junction diodes produced side-by-side on
3717 6{H}-Si{C} substrates",
3723 keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
3724 C;6H-SiC layers;6H-SiC substrates;CVD
3725 process;SiC;chemical vapor deposition;doping;electrical
3726 properties;epitaxial layers;light
3727 emission;low-tilt-angle 6H-SiC substrates;p-n junction
3728 diodes;polytype;rectification characteristics;reverse
3729 leakage current;reverse voltages;temperature;leakage
3730 currents;power electronics;semiconductor
3731 diodes;semiconductor epitaxial layers;semiconductor
3732 growth;semiconductor materials;silicon
3733 compounds;solid-state rectifiers;substrates;vapour
3734 phase epitaxial growth;",
3735 doi = "10.1109/16.285038",
3737 notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
3742 author = "N. Schulze and D. L. Barrett and G. Pensl",
3744 title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
3745 single crystals by physical vapor transport",
3748 journal = "Applied Physics Letters",
3751 pages = "1632--1634",
3752 keywords = "silicon compounds; semiconductor materials;
3753 semiconductor growth; crystal growth from vapour;
3754 photoluminescence; Hall mobility",
3755 URL = "http://link.aip.org/link/?APL/72/1632/1",
3756 doi = "10.1063/1.121136",
3757 notes = "micropipe free 6h-sic pvt growth",
3761 author = "P. Pirouz and C. M. Chorey and J. A. Powell",
3763 title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
3766 journal = "Applied Physics Letters",
3770 keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
3771 MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
3772 VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
3773 ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
3775 URL = "http://link.aip.org/link/?APL/50/221/1",
3776 doi = "10.1063/1.97667",
3777 notes = "apb 3c-sic heteroepitaxy on si",
3780 @Article{shibahara86,
3781 title = "Surface morphology of cubic Si{C}(100) grown on
3782 Si(100) by chemical vapor deposition",
3783 journal = "Journal of Crystal Growth",
3790 doi = "DOI: 10.1016/0022-0248(86)90158-2",
3791 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
3792 author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
3794 notes = "defects in 3c-sis cvd on si, anti phase boundaries",
3797 @Article{desjardins96,
3798 author = "P. Desjardins and J. E. Greene",
3800 title = "Step-flow epitaxial growth on two-domain surfaces",
3803 journal = "Journal of Applied Physics",
3806 pages = "1423--1434",
3807 keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
3808 FILM GROWTH; SURFACE STRUCTURE",
3809 URL = "http://link.aip.org/link/?JAP/79/1423/1",
3810 doi = "10.1063/1.360980",
3811 notes = "apb model",
3815 author = "S. Henke and B. Stritzker and B. Rauschenbach",
3817 title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
3818 carbonization of silicon",
3821 journal = "Journal of Applied Physics",
3824 pages = "2070--2073",
3825 keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
3826 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
3828 URL = "http://link.aip.org/link/?JAP/78/2070/1",
3829 doi = "10.1063/1.360184",
3830 notes = "ssmbe of sic on si, lower temperatures",
3834 title = "Atomic layer epitaxy of cubic Si{C} by gas source
3835 {MBE} using surface superstructure",
3836 journal = "Journal of Crystal Growth",
3843 doi = "DOI: 10.1016/0022-0248(89)90442-9",
3844 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
3845 author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
3846 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
3847 notes = "gas source mbe of 3c-sic on 6h-sic",
3850 @Article{yoshinobu92,
3851 author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
3852 and Takashi Fuyuki and Hiroyuki Matsunami",
3854 title = "Lattice-matched epitaxial growth of single crystalline
3855 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
3856 molecular beam epitaxy",
3859 journal = "Applied Physics Letters",
3863 keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
3864 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
3865 INTERFACE STRUCTURE",
3866 URL = "http://link.aip.org/link/?APL/60/824/1",
3867 doi = "10.1063/1.107430",
3868 notes = "gas source mbe of 3c-sic on 6h-sic",
3871 @Article{yoshinobu90,
3872 title = "Atomic level control in gas source {MBE} growth of
3874 journal = "Journal of Crystal Growth",
3881 doi = "DOI: 10.1016/0022-0248(90)90575-6",
3882 URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
3883 author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
3884 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
3885 notes = "gas source mbe of 3c-sic on 3c-sic",
3889 title = "Atomic layer epitaxy controlled by surface
3890 superstructures in Si{C}",
3891 journal = "Thin Solid Films",
3898 doi = "DOI: 10.1016/0040-6090(93)90159-M",
3899 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
3900 author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
3902 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3907 title = "Microscopic mechanisms of accurate layer-by-layer
3908 growth of [beta]-Si{C}",
3909 journal = "Thin Solid Films",
3916 doi = "DOI: 10.1016/0040-6090(93)90162-I",
3917 URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
3918 author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
3919 and S. Misawa and E. Sakuma and S. Yoshida",
3920 notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer
3925 author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
3927 title = "Effects of gas flow ratio on silicon carbide thin film
3928 growth mode and polytype formation during gas-source
3929 molecular beam epitaxy",
3932 journal = "Applied Physics Letters",
3935 pages = "2851--2853",
3936 keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
3937 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
3938 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
3940 URL = "http://link.aip.org/link/?APL/65/2851/1",
3941 doi = "10.1063/1.112513",
3942 notes = "gas source mbe of 6h-sic on 6h-sic",
3946 author = "T. Fuyuki and T. Hatayama and H. Matsunami",
3947 title = "Heterointerface Control and Epitaxial Growth of
3948 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
3949 publisher = "WILEY-VCH Verlag",
3951 journal = "physica status solidi (b)",
3954 notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
3959 title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
3960 journal = "Journal of Crystal Growth",
3967 doi = "DOI: 10.1016/S0022-0248(97)00391-6",
3968 URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
3969 author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
3970 keywords = "Reflection high-energy electron diffraction (RHEED)",
3971 keywords = "Scanning electron microscopy (SEM)",
3972 keywords = "Silicon carbide",
3973 keywords = "Silicon",
3974 keywords = "Island growth",
3975 notes = "lower temperature, 550-700",
3978 @Article{hatayama95,
3979 title = "Low-temperature heteroepitaxial growth of cubic Si{C}
3980 on Si using hydrocarbon radicals by gas source
3981 molecular beam epitaxy",
3982 journal = "Journal of Crystal Growth",
3989 doi = "DOI: 10.1016/0022-0248(95)80077-P",
3990 URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
3991 author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
3992 and Hiroyuki Matsunami",
3996 author = "Volker Heine and Ching Cheng and Richard J. Needs",
3997 title = "The Preference of Silicon Carbide for Growth in the
3998 Metastable Cubic Form",
3999 journal = "Journal of the American Ceramic Society",
4002 publisher = "Blackwell Publishing Ltd",
4004 URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
4005 doi = "10.1111/j.1151-2916.1991.tb06811.x",
4006 pages = "2630--2633",
4007 keywords = "silicon carbide, crystal growth, crystal structure,
4008 calculations, stability",
4010 notes = "3c-sic metastable, 3c-sic preferred growth, sic
4011 polytype dft calculation refs",
4014 @Article{allendorf91,
4015 title = "The adsorption of {H}-atoms on polycrystalline
4016 [beta]-silicon carbide",
4017 journal = "Surface Science",
4024 doi = "DOI: 10.1016/0039-6028(91)90912-C",
4025 URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
4026 author = "Mark D. Allendorf and Duane A. Outka",
4027 notes = "h adsorption on 3c-sic",
4030 @Article{eaglesham93,
4031 author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
4032 D. P. Adams and S. M. Yalisove",
4034 title = "Effect of {H} on Si molecular-beam epitaxy",
4037 journal = "Journal of Applied Physics",
4040 pages = "6615--6618",
4041 keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
4042 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
4043 DIFFUSION; ADSORPTION",
4044 URL = "http://link.aip.org/link/?JAP/74/6615/1",
4045 doi = "10.1063/1.355101",
4046 notes = "h incorporation on si surface, lower surface
4051 author = "Ronald C. Newman",
4052 title = "Carbon in Crystalline Silicon",
4053 journal = "MRS Online Proceedings Library",
4058 doi = "10.1557/PROC-59-403",
4059 URL = "http://dx.doi.org/10.1557/PROC-59-403",
4060 eprint = "http://journals.cambridge.org/article_S194642740054367X",
4064 author = "U. Gösele",
4065 title = "The Role of Carbon and Point Defects in Silicon",
4066 journal = "MRS Online Proceedings Library",
4071 doi = "10.1557/PROC-59-419",
4072 URL = "http://dx.doi.org/10.1557/PROC-59-419",
4073 eprint = "http://journals.cambridge.org/article_S1946427400543681",
4077 title = "Convergence of supercell calculations for point
4078 defects in semiconductors: Vacancy in silicon",
4079 author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
4081 journal = "Phys. Rev. B",
4084 pages = "1318--1325",
4088 doi = "10.1103/PhysRevB.58.1318",
4089 publisher = "American Physical Society",
4090 notes = "convergence k point supercell size, vacancy in