From: hackbard Date: Fri, 16 Jul 2010 21:15:25 +0000 (+0200) Subject: foo X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=caebb70f0d66dabdef917b2563ec1742c5144441;p=lectures%2Flatex.git foo --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 6b11b00..8556c40 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -70,6 +70,21 @@ notes = "sic polytypes", } +@Article{koegler03, + author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A. + Mücklich and H. Reuther and W. Skorupa and C. Serre and + A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Applied Physics A: Materials Science \& Processing", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + notes = "dual implantation, sic prec enhanced by vacancies", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -2277,3 +2292,95 @@ publisher = "American Physical Society", notes = "gga pw91 (as in vasp)", } + +@Article{baldereschi73, + title = "Mean-Value Point in the Brillouin Zone", + author = "A. Baldereschi", + journal = "Phys. Rev. B", + volume = "7", + number = "12", + pages = "5212--5215", + numpages = "3", + year = "1973", + month = jun, + doi = "10.1103/PhysRevB.7.5212", + publisher = "American Physical Society", + notes = "mean value k point", +} + +@Article{zhu98, + title = "Ab initio pseudopotential calculations of dopant + diffusion in Si", + journal = "Computational Materials Science", + volume = "12", + number = "4", + pages = "309--318", + year = "1998", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/S0927-0256(98)00023-8", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b", + author = "Jing Zhu", + keywords = "TED (transient enhanced diffusion)", + keywords = "Boron dopant", + keywords = "Carbon dopant", + keywords = "Defect", + keywords = "ab initio pseudopotential method", + keywords = "Impurity cluster", + notes = "binding of c to si interstitial, c in si defects", +} + +@Article{nejim95, + author = "A. Nejim and P. L. F. Hemment and J. Stoemenos", + collaboration = "", + title = "Si{C} buried layer formation by ion beam synthesis at + 950 [degree]{C}", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "20", + pages = "2646--2648", + keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON + CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 -- + 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION + ELECTRON MICROSCOPY", + URL = "http://link.aip.org/link/?APL/66/2646/1", + doi = "10.1063/1.113112", + notes = "precipitation mechanism by substitutional carbon, si + self interstitials react with further implanted c", +} + +@Article{guedj98, + author = "C. Guedj and M. W. Dashiell and L. Kulik and J. + Kolodzey and A. Hairie", + collaboration = "", + title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y] + alloys", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "8", + pages = "4631--4633", + keywords = "silicon compounds; precipitation; localised modes; + semiconductor epitaxial layers; infrared spectra; + Fourier transform spectra; thermal stability; + annealing", + URL = "http://link.aip.org/link/?JAP/84/4631/1", + doi = "10.1063/1.368703", + notes = "coherent 3C-SiC, topotactic", +} + +@Article{jones04, + author = "R Jones and B J Coomer and P R Briddon", + title = "Quantum mechanical modelling of defects in + semiconductors", + journal = "Journal of Physics: Condensed Matter", + volume = "16", + number = "27", + pages = "S2643", + URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", + year = "2004", + notes = "ab inito init, vibrational modes, c defect in si", +}