From: hackbard Date: Wed, 19 Jan 2011 15:58:55 +0000 (+0100) Subject: new refs and text for sic hetero on si miscut X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=a141d46595869e132fe461227a1bc820efae3ad8;p=lectures%2Flatex.git new refs and text for sic hetero on si miscut --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index f7a5e86..26f0608 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -3459,3 +3459,20 @@ Matsunami", notes = "defects in 3c-sis cvd on si, anti phase boundaries", } + +@Article{desjardins96, + author = "P. Desjardins and J. E. Greene", + collaboration = "", + title = "Step-flow epitaxial growth on two-domain surfaces", + publisher = "AIP", + year = "1996", + journal = "Journal of Applied Physics", + volume = "79", + number = "3", + pages = "1423--1434", + keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY; + FILM GROWTH; SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?JAP/79/1423/1", + doi = "10.1063/1.360980", + notes = "apb model", +} diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index dd18103..354f9f5 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -168,9 +168,9 @@ During carbonization the Si surface is chemically converted into a SiC film with In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures. Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{shibahara86}. Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{shibahara86,pirouz87}. +APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}. +However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}. - -off-axis \cite{shibahara86,powell87_2} ... resulting in carb and growth \cite{kitabatake97} ... lower temps ... to limit thermal stress due to differing expansion coefficients ...