From: hackbard Date: Mon, 29 Mar 2004 15:56:48 +0000 (+0000) Subject: kleine fixes X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=99cad9238e35ba9cf38118378219eabbdb7cef39;p=lectures%2Flatex.git kleine fixes --- diff --git a/nlsop/nlsop_emrs_2004.tex b/nlsop/nlsop_emrs_2004.tex index 099a532..fb0653d 100644 --- a/nlsop/nlsop_emrs_2004.tex +++ b/nlsop/nlsop_emrs_2004.tex @@ -62,7 +62,7 @@ Formation of nanometric selforganized ordered amorphous lamella precipitates is \newpage \section{Model} -A model describing the formation of nanometric selforganized ordered amorphous $SiC_x$ inclusions with increasing dose was introduced in \cite{1}. Figure \ref{1} shows the evolution into ordered lamellae with increasing dose. +A model describing the formation of nanometric selforganized ordered amorphous $SiC_x$ inclusions was introduced in \cite{1}. Figure \ref{1} shows the evolution into ordered lamellae with increasing dose. %\begin{figure}[!h] %\begin{center} @@ -76,7 +76,7 @@ As a result of the supersaturation of carbon atoms in silicon there is a nucleat \newpage \section{Simulation} -Before discussing the implementation some assumptions and approximations have to be done. Figure \ref{2} shows the stopping powers and carbon concentration profile calculated by TRIM. The depth region we are interested in is between $0-300 \, nm$, the region between surface of the target and start of the continued amorphous $SiC_x$ layer (from now on called simulation window), where the nuclear stopping power and the implantation profile can be approximated by a linear function of depth. Furthermore the probability of amorphization is assumed to be proportional to the nuclear stopping power. A local probability of amorphization somewhere in the target is composed of three parts, the ballistic, carbon-induced and stress-induced amorphization. The ballistic amorphization is proportional to the nuclear stopping power, as mentioned before. the carbon-induced amorphization is a linear function of the local carbon concentration. the stress-induced amorphization is proportional to the compressive stress apllied by the amorphous neighbours. Thus the probability of a crystalline volume getting amorphous can be calculated as follows, +Before discussing the implementation some assumptions and approximations have to be done. Figure \ref{2} shows the stopping powers and carbon concentration profile calculated by TRIM. The depth region we are interested in is between $0-300 \, nm$, the region between surface of the target and start of the continuous amorphous $SiC_x$ layer (from now on called simulation window), where the nuclear stopping power and the implantation profile can be approximated by a linear function of depth. Furthermore the probability of amorphization is assumed to be proportional to the nuclear stopping power. A local probability of amorphization somewhere in the target is composed of three parts, the ballistic, carbon-induced and stress-induced amorphization. The ballistic amorphization is proportional to the nuclear stopping power, as mentioned before. the carbon-induced amorphization is a linear function of the local carbon concentration. the stress-induced amorphization is proportional to the compressive stress apllied by the amorphous neighbours. Thus the probability of a crystalline volume getting amorphous can be calculated as follows, \[ p_{c \rightarrow a} = b_{ap} + a_{cp} \times c^{local}_{carbon} + \sum_{amorphous \, neighbours} \frac{a_{ap} \times c_{carbon}}{distance^2} \]