From: hackbard Date: Thu, 2 Sep 2010 16:28:43 +0000 (+0200) Subject: typo X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=82e148b83ec43f68f1954ba35ccc186ecb374df6;p=lectures%2Flatex.git typo --- diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex index fa11e28..947c86e 100644 --- a/posic/publications/defect_combos.tex +++ b/posic/publications/defect_combos.tex @@ -178,7 +178,7 @@ No other configuration, within the ones that are mentioned, is affected. Concerning the mobility of the ground state Si$_{\text{i}}$, an activation energy of \unit[0.67]{eV} was found for the Si$_{\text{i}}$ \hkl[0 1 -1] to \hkl[1 1 0] DB configuration located at the next neighbored Si lattice site in \hkl[1 1 -1] direction. Further investigations revealed a barrier of \unit[0.94]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ H, \unit[0.53]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ T and \unit[0.35]{eV} for the Si$_{\text{i}}$ H to Si$_{\text{i}}$ T transition. -The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli95}. +The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli05}. % look for values in literature for neutraly charged Si_i diffusion % T seems to constitute a saddle point according to migration calculations