From: hackbard Date: Wed, 13 Jul 2011 13:18:32 +0000 (+0200) Subject: polytypes substituted X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=7aaa88055445022d118d09860dc3412871c9eb9c;p=lectures%2Flatex.git polytypes substituted --- diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index cb46a7b..5629f6f 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -26,13 +26,21 @@ The polytypes differ in the one-dimensional stacking sequence of identical, clos Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal. \begin{figure}[t] \begin{center} -\includegraphics[width=10cm]{polytypes.eps} +\includegraphics[height=5.5cm]{polytypes_own.eps}\\[0.1cm] +\begin{minipage}{0.45\textwidth} +{\small +\hspace*{0.05cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.09cm} a\\ +\hspace*{0.5cm} 3C \hspace*{0.9cm} 2H \hspace*{1.0cm} 4H \hspace*{1.3cm} 6H +} +\end{minipage} +%\includegraphics[width=10cm]{polytypes.eps} \end{center} \caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.} \label{fig:sic:polytypes} \end{figure} Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes. +\bibpunct{}{}{,}{n}{}{} \begin{table}[t] \begin{center} \begin{tabular}{l c c c c c c} @@ -51,9 +59,10 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \hline \end{tabular} \end{center} -\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite{wesch96,casady96,park98}.} +\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite[]{wesch96,casady96,park98}.} \label{table:sic:properties} \end{table} +\bibpunct{[}{]}{,}{n}{}{} % todo add more refs + check all values! Different polytypes of SiC exhibit different properties. Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials. @@ -421,5 +430,3 @@ On the other hand, processes relying upon prevention of precipitation in order t % strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe) % serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates -% todo - own polytype stacking sequence image -