From: hackbard Date: Thu, 22 Sep 2011 18:03:10 +0000 (+0200) Subject: added sf and apb defect reduction method X-Git-Url: https://hackdaworld.org/gitweb/?a=commitdiff_plain;h=3c03feee61017489bbd7bbc612a730de6f43b304;p=lectures%2Flatex.git added sf and apb defect reduction method --- diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index 280732e..54fa38e 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -186,9 +186,8 @@ APB defects, which constitute the primary residual defects in thick layers, are However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$}~\cite{shibahara86,powell87_2}. This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions~\cite{kitabatake97}. % more up2date paper -A reduction of the SF in addition to the APB defects was recently achieved growing 3C-SiC on undulant Si~\cite{nagasawa06}. -Therefore, a Si\hkl(0 0 1) substrate is covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions. -This eliminates APB defects via a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes, which are, thus, self-vanishing. +A reduction of the SF in addition to the APB defects was recently achieved by growing 3C-SiC on undulant Si~\cite{nagasawa06}, i.e.\ a Si \hkl(0 0 1) substrate covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions. +In this way, APB defects are eliminated by a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes and, thus, terminate as they connect with each other during the growth process. % By MBE, lower process temperatures than these typically employed in CVD have been realized~\cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces. In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.