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-{\color{black}Diploma thesis}\\
- \underline{Monte Carlo} simulation modeling the selforganization process\\
- leading to periodic arrays of nanometric amorphous SiC precipitates
+\framebox{
+\begin{minipage}{12.3cm}
+ \underline{Defects}
+ \begin{itemize}
+ \item DFT / EA
+ \begin{itemize}
+ \item Point defects excellently / fairly well described
+ by DFT / EA
+ \item C$_{\text{sub}}$ drastically underestimated by EA
+ \item EA predicts correct ground state:
+ C$_{\text{sub}}$ \& \si{} $>$ \ci{}
+ \item Identified migration path explaining
+ diffusion and reorientation experiments by DFT
+ \item EA fails to describe \ci{} migration:
+ Wrong path \& overestimated barrier
+ \end{itemize}
+ \item Combinations of defects
+ \begin{itemize}
+ \item Agglomeration of point defects energetically favorable
+ by compensation of stress
+ \item Formation of C-C unlikely
+ \item C$_{\text{sub}}$ favored conditions (conceivable in IBS)
+ \item \ci{} \hkl<1 0 0> $\leftrightarrow$ \cs{} \& \si{} \hkl<1 1 0>\\
+ Low barrier (\unit[0.77]{eV}) \& low capture radius
+ \end{itemize}
+ \end{itemize}